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Part Manufacturer Description Datasheet Download Buy Part
LTC4011EFE#PBF Linear Technology IC BATTERY CHARGE CONTROLLER, 615 kHz SWITCHING FREQ-MAX, PDSO20, 4.40 MM, PLASTIC, TSSOP-20, Switching Regulator or Controller
LTC4011CFE#TRPBF Linear Technology LTC4011 - High Efficiency Standalone Nickel Battery Charger; Package: TSSOP; Pins: 20; Temperature Range: 0°C to 70°C
LTC4011EFE Linear Technology IC BATTERY CHARGE CONTROLLER, 615 kHz SWITCHING FREQ-MAX, PDSO20, 4.40 MM, PLASTIC, TSSOP-20, Switching Regulator or Controller
LTC4011CFE#PBF Linear Technology LTC4011 - High Efficiency Standalone Nickel Battery Charger; Package: TSSOP; Pins: 20; Temperature Range: 0°C to 70°C
LTC4011CFE#TR Linear Technology LTC4011 - High Efficiency Standalone Nickel Battery Charger; Package: TSSOP; Pins: 20; Temperature Range: 0°C to 70°C
LTC4011CFE Linear Technology LTC4011 - High Efficiency Standalone Nickel Battery Charger; Package: TSSOP; Pins: 20; Temperature Range: 0°C to 70°C

4001 4011 cmos Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
74573

Abstract: 74574 7486 XOR GATE 7486 full adder latch 74574 7408, 7404, 7486, 7432 7490 Decade Counter 74373 cmos dual s-r latch 2 bit magnitude comparator using 2 xor gates design a BCD counter using j-k flipflop
Text: Similar Devices 7403 / 74132 / 4011 / 4093 / 40107 4001 7400 / 74132 / 4011 / 4093 / 40107 7405 / 7406 , . Device 4001 4002 4007 4008 4009 4011 4012 4013 4014 4015 4016 4017 4018 4019 4020 4021 , CMOS chips that are readily available over the counter ( from such places as Maplin Electronics in the UK ). Tables of both TTL and CMOS devices are provided along with tables grouping chips with the same functionality together. The following tables are available . TTL Device Summary CMOS Device


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4011 nand gate IC

Abstract: integrated circuit 4011 CD4001CN 4001 4011 cmos CD4011CN 4011 CMOS NAND GATE ic cmos 4011 MOS 4011 IC 4011 CMOS 4011 cmos
Text: /CD4011C are monoli thic complementary MOS ( CMOS ) quadruple two-input NOR and NAND gate integrated circuits , Current VDD = 5.0V, V0 = 0.4V, V| = VDD N-Channel ( 4001 ) Vdd = 10V, V0 = 0.5V, V| = Vdd (Note 2) tDp mA mA mA mA mA mA mA pA Output Drive Current Vdd = 5.0V, V0 = 2.5V, V| = Vss P-Channel ( 4001 ) VDD , ( 4011 ) Vdd = 10V, V0 = 0.5V, V, = Vdd (Note 2) idn Id P Output Drive Current Vdd = 5.0V, V0 = 2.5V,V i =V ss P-Channel ( 4011 ) Vdd = 10V, V0 = 9.5V, V, = Vss (Note 2) li Input Current 5-9


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PDF CD4001M/CD4001C, C04011M/C04011C CD4001M/CD4001C CD4011M/CD4011C CD4011C 4011 nand gate IC integrated circuit 4011 CD4001CN 4001 4011 cmos CD4011CN 4011 CMOS NAND GATE ic cmos 4011 MOS 4011 IC 4011 CMOS 4011 cmos
CD4001C

Abstract: ic cmos 4011 CD4011C CD4011M 4001 4011 cmos ic cmos 4011 or 50VVDD 4011 CMOS IC 4011 CMOS cmos ic cd4001 BE
Text: , CD4011M/CD4011C are mono lithic complementary MOS ( CMOS ) quadruple two-input NOR and NAND gate integrated , Immunity (All Inputs) Output Drive Current N-Channel ( 4001 ) (Note 2) Output Drive Current P-Channel ( 4001 ) (Note 2) Output Drive Current N-Channel ( 4011 ) (Note 2) Id P Output Drive Current P-Channel ( 4011 ) (Note , Immunity (All Inputs) Output Drive Current N-Channel ( 4001 ) (Note 2) Output Drive Current P-Channei ( 4001 ) (Note 2) Output Drive Current N-Channel ( 4011 ) (Note 2) Output Drive Current P-Channel ( 4011 ) (Note 2


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PDF CD4001M/CD4001C/CD4011M/CD4011C CD4001M/CD4001C CD4011M/CD4011C CD4001M/CD4001C, CD4011M CD4011C CD4001C ic cmos 4011 CD4011C CD4011M 4001 4011 cmos ic cmos 4011 or 50VVDD 4011 CMOS IC 4011 CMOS cmos ic cd4001 BE
2010 - Semtech alpac

Abstract: 4011 JANS1N5550 4011 equivalent JANS1N5618 JANS1N5614 JANS1N5554 JANS1N5420 JANS1N5415 JANS1N5623
Text: 750/ 4011 750/4021 Post HTRB Elect 750/4016 750/ 4011 750/4021 Optional CAP 750/ 4001 High , /4016 750/ 4011 750/4021 Body coat/band/ label Visual & Mechanical 750/2071 PDA Post Burn-in Elect deltas 750/4016 750/ 4011 Electricals 750/4016 750/ 4011 750/4021 Scope Display 750/4023 Post Burn-in Elect 750/4016 750/ 4011 750/4021 Pack Other Optional Tests Power Burn-In 750/1038 PDA Post HTRB Elect deltas 750/4016 750/ 4011 Optional X-Ray Optional IR


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PDF HR500S) SpaceJANS-PDA10 Semtech alpac 4011 JANS1N5550 4011 equivalent JANS1N5618 JANS1N5614 JANS1N5554 JANS1N5420 JANS1N5415 JANS1N5623
2010 - Semtech alpac

Abstract: integrated circuit 4011 JANS1N5806 4011 datasheet 4011 mil-prf-19500-427 JANS1N5615 JANS1N6138A ir 4021 SEMTECH LABEL
Text: Elect 750/4016 750/ 4011 750/4021 Optional CAP 750/ 4001 High Temperature Reverse Bias 750 , Thermal Impedance 750/3101 Thermal Normalization Electrical GNG 750/4016 750/ 4011 750/4021 , 750/ 4011 Electricals 750/4016 750/ 4011 750/4021 Scope Display 750/4023 Post Burn-in Elect 750/4016 750/ 4011 750/4021 Pack Other Optional Tests Power Burn-In 750/1038 PDA Post HTRB Elect deltas 750/4016 750/ 4011 Optional X-Ray Optional IR Hot 750/4016 Optional TRR


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PDF HR500S) SpaceJANS-PDA10 Semtech alpac integrated circuit 4011 JANS1N5806 4011 datasheet 4011 mil-prf-19500-427 JANS1N5615 JANS1N6138A ir 4021 SEMTECH LABEL
2010 - Space Level Flow HR500S Axial and Surface Mount

Abstract: High-Rel Discrete Semiconductors 4011 HR500 SEMTECH LABEL IR 4065 RR ir 4021 IR 4011 HTRB water transfer
Text: 750/ 4011 750/4021 6 7 VF1, < xxx Vdc, If1 = y Adc (pulse as specified) VF2, < xxx Vdc, If2 , through packaging is an available option Pre HTRB Elect 750/ 4011 750/4021 9 IR 4011 750/4021 11 Post HTRB Elect deltas 12 PDA 13 Power Burn-In 750/4016 750/ 4011 14 , Conditions and/or Description of Operation 750/ 4011 Condition B, Operated for 240 hours min. Ta = 55C


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PDF HR500S HR500S Mil-PRF-19500 HR500S-PDA2010 Space Level Flow HR500S Axial and Surface Mount High-Rel Discrete Semiconductors 4011 HR500 SEMTECH LABEL IR 4065 RR ir 4021 IR 4011 HTRB water transfer
2010 - Semtech alpac

Abstract: 4011 4011 datasheet Zener Diodes surface 1.5W JANS1N5614 JANS1N5554 JANS1N5550 JANS1N5420 JANS1N5415 Semtech Rectifiers
Text: Elect 750/4016 750/ 4011 750/4021 Optional CAP 750/ 4001 High Temperature Reverse Bias 750 , Thermal Impedance 750/3101 Thermal Normalization Electrical GNG 750/4016 750/ 4011 750/4021 , 750/ 4011 Electricals 750/4016 750/ 4011 750/4021 Scope Display 750/4023 Post Burn-in Elect 750/4016 750/ 4011 750/4021 Pack Other Optional Tests Power Burn-In 750/1038 PDA Post HTRB Elect deltas 750/4016 750/ 4011 Optional X-Ray Optional IR Hot 750/4016 Optional TRR


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PDF HR500S) SpaceJANS-PDA10 Semtech alpac 4011 4011 datasheet Zener Diodes surface 1.5W JANS1N5614 JANS1N5554 JANS1N5550 JANS1N5420 JANS1N5415 Semtech Rectifiers
2012 - SpaceJANS-PDA

Abstract: No abstract text available
Text: Thermal Normalization Electrical GNG 750/4016 750/ 4011 750/4021 Body coat/band/ label Visual & Mechanical 750/2071 PDA Post Burn-in Elect deltas 750/4016 750/ 4011 Electricals 750/4016 750/ 4011 750/4021 Scope Display 750/4023 Post Burn-in Elect 750/4016 750/ 4011 750/4021 , / 4011 Optional X-Ray Optional IR Hot 750/4016 Optional TRR 755/4031 Ir Normalization Serialize Pre HTRB Elect 750/4016 750/ 4011 750/4021 Post HTRB Elect 750/4016 750/ 4011 750/4021


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PDF HR500S) SpaceJANS-PDA12 SpaceJANS-PDA
2009 - semtech alpac

Abstract: 4011 JANTX 1N5619 semtech JANS JANS1N5806 JANTX 1N5617 JANS1N5550 JANS1N5620 1N542 mil-prf-19500-427
Text: 750/ 4011 750/4021 Post HTRB Elect 750/4016 750/ 4011 750/4021 Optional CAP 750/ 4001 High , Electrical GNG 750/4016 750/ 4011 750/4021 Body coat/band/ label Visual & Mechanical 750/2071 PDA Post Burn-in Elect deltas 750/4016 750/ 4011 Electricals 750/4016 750/ 4011 750/4021 Scope Display 750/4023 Post Burn-in Elect 750/4016 750/ 4011 750/4021 Pack Other Optional Tests Power Burn-In 750/1038 PDA Post HTRB Elect deltas 750/4016 750/ 4011 Optional X-Ray Optional IR


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PDF HR500S) SpaceJANS-PDA09 semtech alpac 4011 JANTX 1N5619 semtech JANS JANS1N5806 JANTX 1N5617 JANS1N5550 JANS1N5620 1N542 mil-prf-19500-427
2007 - lcx 574

Abstract: STR 4512 HC 4093 4001 4011 cmos HC 40106 4011 cmos logic gate HC 4011 logic gate 4017 14 pin package hcf 4541 equivalent hct 4049
Text: , LX1G, V2G, V2T CMOS 4000 NAND 4011 ; 4012; 4093 02; 27 4001 ; 4002 AND 08; 09; 11 , 4001 4002 4006 4010 4011 4012 4013 4014 4015 4016 4017 4018 4019 4020 4021 4022 4024 , advanced HCMOS ALVC: Advanced low-voltage HCMOS CMOS 4000B Dual gate VHC/VHCT HC/HCT: high-speed CMOS , low-voltage HCMOS LVT: low-voltage CMOS technology LVX: 3.3V low-voltage, low noise HCMOS, 5V input tolerant


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PDF DIP-14/16 DIP-14 DIP-24 SGSTDLOG0307 lcx 574 STR 4512 HC 4093 4001 4011 cmos HC 40106 4011 cmos logic gate HC 4011 logic gate 4017 14 pin package hcf 4541 equivalent hct 4049
HC 4011

Abstract: 1N5814HCE DC-4011 1N5812HCE 1N5812KCE 1N5814 1N5812 1N5814KCE 1N5816 1N5816HCE
Text: Symbol Min. Limit Max. Limit Unit 3101 ZJX 1.35 °C/W 4011 VF1 0.86 V(pk) 4011 VF2 0.95 Vdc(pk) 4016 lR1 10 uA dc 4021 V(BR)1 uA dc 60 Vdc 110 Vdc 160 Vdc 4016 ' R2 1.00 mA dc 4011 VF3 0.78 V(pk) 4011 VF3 1.05 V(pk) 4021 V(BR) V(pk) 50 100 150 4031 trr 35 ns 4001 cj 300 PF 4026 vfr 2.2 V(pk) 4026 trr 15 ns 7-30-01 Rev. IR mm. COLORADO U Microsemi 800


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PDF N5812â 1N5812HCE 1N5812KCE 1N5814HCE 1N5814KCE 1N5816HCE 1N5816KCE 10Apk 100ua HC 4011 DC-4011 1N5814 1N5812 1N5816
Varistor 4032

Abstract: Arresters U 8047 4012
Text: VCtransversal at 1 kV/µs QTS 4001 - 1 QTS 4001 - 2 1 5 2,2 < 450 < 10 QTS 4002- 1 QTS 4002 , < 450 < 220 QTS 4006- 1 QTS 4006- 2 1 230 10 < 600 < 360 QTS 4011 - 1 QTS 4011 - 2


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PDF 529/EN 89/336/EEC 73/23/EEC. Varistor 4032 Arresters U 8047 4012
HC 4011

Abstract: 1N5814 1N5816HCE 1N5816 1N5814KCE 1N5814HCE DC-4011 1N5812KCE 1N5812HCE 1N5812
Text: . Limit Max. Limit Unit 3101 ZJX 1.35 °C/W 4011 VF1 0.86 V(pk) 4011 VF2 0.95 Vdc(pk) 4016 I R1 10 uA dc 4021 V(BR)1 uA dc 60 Vdc 110 Vdc 160 Vdc 4016 1 R2 1.00 mA dc 4011 VF3 0.78 V(pk) 4011 VF3 1.05 V(pk) 4021 V(BR) V(pk) 50 100 150 4031 trr 35 ns 4001 Cj


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PDF \l5812â 1N5812HCE 1N5812KCE 1N5814HCE 1N5814KCE 1N5816HCE 1N5816KCE 10Apk 100ua HC 4011 1N5814 1N5816 DC-4011 1N5812
CI 4011

Abstract: CI 4016 4011 IR 4011 1N6392
Text: Method Symbol Max. Limit Unit V(pk) Forward voltage © 120Apk 4011 VFM1 0.82 Forward voltage @ 60Apk 4011 VFM2 0.68 V(pk) Forward voltage © 10Apk 4011 VFM3 0.51 V(pk) Reverse current  , ) Forward voltage © 10Apk,-55°C 4011 VFM4 0.69 V(pk) Subgroup 4 VRSM = 54V Reverse current © 4016 1 RM5 2 A(pk) Capacitance @ ^R = 5V 4001 cT 3000 PF 7-19-01 Rev. IR mm. COLORADO U Microsemi


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PDF 1N6392 260juH 120Apk 60Apk 10Apk CI 4011 CI 4016 4011 IR 4011
mc 4011

Abstract: Mc 4049 MM4601 CD4017 CD4024 4049 schmitt trigger MC14584 "cross reference" CD4013 CD4018 CD4021 serial input parallel output
Text: HD-4000 SERIES MANUFACTURER CROSS REFERENCE FUNCTION HARRIS RCA NATIONAL MOTOROLA Dual 3 Input NOR Gate + Inverter HD-4000 CD4000 Quad 2 Input NOR HD- 4001 CD4001 MM4601 Dual 4 Input NOR HD , HD-4007 CD4007 4-Bit Full Adder HD-4008 CD4008 Quad 2 Input NAND HD- 4011 CD4011 MM4611 Dual 4 , PMOS Buffer Hex Non-Inverting PMOS Buffer Three State Hex Buffer Three State Hex Buffer HD-4000 HD- 4001 HID-4002 hlD- 4011 HID-4012 HID-4023 HID-4025 CD4069 (RCA)* HD-4030 MC 14507 (MOTO)* HD


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PDF HD-4000 CD4000 HD-4001 CD4001 MM4601 HD-4002 CD4002 MM4602 HD-4006 mc 4011 Mc 4049 MM4601 CD4017 CD4024 4049 schmitt trigger MC14584 "cross reference" CD4013 CD4018 CD4021 serial input parallel output
1N6304

Abstract: 1N6306KCE 1N6306HCE 1N6306 1N6305KCE 1N6305HCE 1N6305 1N6304KCE 1N6304HCE 1N6304-06
Text: Symbol Min. Limit Max. Limit Unit Forward voltage © 70Apk 4011 VF1 0.975 Vdc(pk) Forward voltage @ 150Apk 4011 VF2 1.18 Vdc(pk) Forward voltage @ rated Vr 4016 |RI 25 uA dc Reverse current @ rated VR,150°C 4016 I R2 30 mA dc Forward voltage @ 70Apk,150°C 4011 VF3 0.84 V(pk) Breakdown volt. @ 1 mA , 4001 Cj 600 pF Forward recovery voltage 4026 VF(Dyn) 2.2 V(pk) Forward recovery time 4026 trr 15


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PDF 1N6304-06 1N6304HCE 1N6304KCE 1N6305HCE 1N6305KCE 1N6306HCE 1N6306KCE 70Apk 150Apk 1N6304 1N6306KCE 1N6306 1N6305
U1 4011

Abstract: 1N6306KCE 1N6306HCE 1N6306 1N6305KCE 1N6305HCE 1N6305 1N6304KCE 1N6304HCE 1N6304
Text: Forward voltage @ 70Apk 4011 VFI 0.975 Vdc(pk) Forward voltage @ 150Apk 4011 VF2 1.18 Vdc(pk , °C 4016 1 R2 mA dc Forward voltage © 70Apk,150°C 4011 VF3 0.84 V(pk) Breakdown volt. @ 1 mA , Capacitance @ VR = 10V 4001 Cj 600 PF Subgroup 7 VF(Dyn) V(pk) Forward recovery voltage 4026 2.2


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PDF N6304 1N6304HCE 1N6304KCE 1N6305HCE 1N6305KCE 1N6306HCE 1N6306KCE 150Apk 70Apk 1N6304 U1 4011 1N6306KCE 1N6306 1N6305 1N6304
CI 4016

Abstract: CI 4011 1N6391
Text: Thermal Impedence Method 3101 Symbol z0JX Max. Limit 2 Unit °c/w Forward voltage @ 50Apk 4011 VFM1 0.68 V(pk) Forward voltage © 5Apk 4011 VFM2 0.5 V(pk) Reverse current © 45V 4016 1 RM1 15 mA(pk , 40 mA(pk) Reverse current @ 45V,-55° C 4016 1 RM4 400 mA(pk) Forward voltage © 5Apk,-55°C 4011 , 5V 4001 cT 2000 PF 7-19-01 Rev. IR mm. COLORADO U Microsemi 800 Hoyt Street Broom field, CO


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PDF 1N6391 50Apk CI 4016 CI 4011
cd 4011 be

Abstract: l6391
Text: Impedence Method 3101 Symbol ZOJX Max. Limit 2 Unit °c/w Forward voltage @ 50Apk 4011 VFMI 0.68 V(pk) Forward voltage @ 5Apk 4011 VFM2 0.5 V(pk) Reverse current @ 45V 4016 I RM1 15 mA(pk) Subgroup 3 , ) Reverse current @ 45V,-55° C 4016 IRM4 400 mA(pk) Forward voltage @ 5Apk,-55°C 4011 I RM3 0.6 V(pk) Subgroup 4 Reverse current @ VRSM = 54V 4016 ' RM5 2 A(pk) Capacitance @ ^R = 5V 4001 cT 2000 pF O. .


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PDF \l6391 260juH, 50Apk cd 4011 be l6391
2005 - 4001 4011 cmos

Abstract: 4049 DIP14 4013 datasheet hct lcx 574 str 4512 CMOS 4541 CMOS4000 m013tr 4017 14 pin package hcf 4541 be
Text: , LX1G, V2G, V2T CMOS 4000 NAND 4011 ; 4012; 4093 02; 27 4001 ; 4002 AND 08; 09; 11 , 597 623 640 646 651 652 670 688 4001 4002 4006 4010 4011 4012 4013 4014 4015 4016 , HCMOS ALVC: Advanced low-voltage HCMOS CMOS 4000B Dual gate VHC/VHCT HC/HCT: high-speed CMOS LCX , HCMOS LVT: low-voltage CMOS technology LVX: 3.3V low-voltage, low noise HCMOS, 5V input tolerant


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PDF SO-14 SO-16L SO-16 SO-20 SO-24 TSSOP14 OT23-8L TSSOP20 TSSOP16 OT23-5L 4001 4011 cmos 4049 DIP14 4013 datasheet hct lcx 574 str 4512 CMOS 4541 CMOS4000 m013tr 4017 14 pin package hcf 4541 be
1998 - MR 4011

Abstract: 40193 Encoder CONTROLLERS SCHEMATIC QUADRATURE CLOCK CONVERTER backlash A3800 LSI Logic LS7083
Text: BORROW MR Vss 3 .1µF COUNT DOWN 14 13 CLOCK GND 8 RB ZERO 4011 4001 , of others which may result from its use. 4001 4001 FIGURE 1. BACKLASH COMPENSATION


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PDF LS7083 A3800 LS7083, LS7083 MR 4011 40193 Encoder CONTROLLERS SCHEMATIC QUADRATURE CLOCK CONVERTER backlash A3800 LSI Logic
ic 4016

Abstract: 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 1n4373 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
Text: Forward voltage (see 4. 7.1) 4011 if = 10 ma(pk) (pulsed) vf - 1.0 v(pk) Forward voltage (see 4. 7.1) 4011 if = 50 ma(pk) (pulsed) vf - 2.0 v(pk) Reverse current 4016 DC method; VR = 20 Vdc IR - 0 , nsec - Capacitance 4001 Vr = 0; Vsig = 50 mv(p-p), max; f = 1 MHz C - 2.0 Pi Reverse current at , — - - . . End points: Forward voltage (see 4. 7.11 4011 if = 10 ma(pk) (pulsed) vf - 1.0 v(pk) Reverse current 4016 DC method; Vr = 80 Vdc IR - 0. 5 fxAdc Capacitance 4001 Vr = 0; VSig


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PDF 0005S3M MIL-S-19500/195D 1N3206 MIL-S-19500/195D, QQ0012S MIL-S-19500. MIL-S-19500 1N4373 ic 4016 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
CI 4011

Abstract: 4011 fan-out 4001 4011 cmos MOS 4011 4011 cmos logic gate CI 4001 HE 4011 4001 nor gate 4011 CMOS NAND GATE
Text:  CMOS QUAD TWO-INPUT NOR GATE GENERAL DESCRIPTION The 4001 quad 2-inpui NOR gate is constructed with MOS P-channel and N-channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. This device contains circuitry to protect the inputs against damage due to high sialic voltages or , CONNECTION 13 12 11 10 9 18 I> CI P- 1 12 3 -a, m QUAD TWO-INPUT GENERAL DESCRIPTION The 4011 is


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PDF
1998 - construction of varactor diode

Abstract: varactor diode q factor measurement ML46580S-992 varactor diode capacitance measurement MA46589 testing of varactor diode MP3021-001 varactor high power symbol of varactor diode and equivalent circuit 5010 varactor
Text: I R2 CJ 4 MIL-STD-750 Test Method 4011 4016 4016 4001 5 Quality Factor Q4 see Note 2 6 Total Capacitance Ratio C T2 /C T12 4001 7 Gamma see Note 4 Test , Capacitance Symbol VF IR CJ 4 MIL-STD-750 Test Method 4011 4016 4001 Test Conditions I F =


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PDF ML46580S-992 ML46580S-992 MA46585 MA46580 MA46580-46584 MA46585-46589 construction of varactor diode varactor diode q factor measurement varactor diode capacitance measurement MA46589 testing of varactor diode MP3021-001 varactor high power symbol of varactor diode and equivalent circuit 5010 varactor
sol 4011 be

Abstract: No abstract text available
Text: Voltage Reverse Current Junction Capacitance Symbol vF U Cj Test Method 4011 4016 4001 Test Conditions lF , Test Method 4011 4016 4001 Max 0.75 10 Units V MA pF 0.15 Electrical Measurements During


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PDF MA47406 MA47406-132 PSS-01-608 sol 4011 be
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