The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT5528EUF#3BTTRPBF Linear Technology 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator
LT5528EUF#3BTPBF Linear Technology 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator
LTC4063EDD#TRPBF Linear Technology LTC4063 - Standalone Linear Li-Ion Charger with Micropower Low Dropout Linear Regulator; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LTC4063EDD#PBF Linear Technology LTC4063 - Standalone Linear Li-Ion Charger with Micropower Low Dropout Linear Regulator; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LTC4063EDD#TR Linear Technology LTC4063 - Standalone Linear Li-Ion Charger with Micropower Low Dropout Linear Regulator; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LTC4063EDD Linear Technology LTC4063 - Standalone Linear Li-Ion Charger with Micropower Low Dropout Linear Regulator; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C

3V IC LINEAR SMD Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched , (TYP.)  Hermetic package  Designed for use in Class AB linear amplifiers APPLICATION  L , V V A mA mA W C C *1:Tc=25C Electrical characteristics Symbol (Ta=25C) Parameter Test conditions Limits Min. Unit IDSS Saturated drain current VDS= 3V ,VGS=0V - 1800 gm Transconductance VDS= 3V ,ID=400mA - 1000 Max. - VGS(off) Po


Original
PDF MGF0805A MGF0805A, 400mA
2006 - 8 pin LM328 ic

Abstract: LINEAR VOLTAGE REGULATOR LM328 8 PIN IC pin out of lm328 lm328 datasheet LM328 "Linear Voltage Regulator" ISL72991 LM328 pin configuration HS9S-117RH ISL72991RH
Text: Low dose rate testing of the Intersil HS9S-117RH positive linear voltage regulator July 2006 , linear voltage regulator. Table of Contents: Abstract 1: Introduction: What is Low Dose Rate , -117RH positive linear voltage regulator 4: Conclusion 5: References 1: Introduction: What is Low Dose , and detrapping rates in the IC 's dielectric thin film layers. A detailed discussion of the basic , applicable SMD . This approach enables comparison of results for both dose rate ranges. ELDRS has proven to


Original
PDF HS9S-117RH 100krad Cobalt-60 8 pin LM328 ic LINEAR VOLTAGE REGULATOR LM328 8 PIN IC pin out of lm328 lm328 datasheet LM328 "Linear Voltage Regulator" ISL72991 LM328 pin configuration ISL72991RH
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0921A L & S BAND / 2W SMD non - matched , Total power dissipation 10 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C Electrical characteristics Symbol (Ta=25C) Parameter Test , IDSS Saturated drain current VDS= 3V ,VGS=0V VGS(off) gm Gate to source cut-off voltage VDS= 3V ,ID=4.0mA Transconductance VDS= 3V ,ID=500mA - 370 - mS Po add Output


Original
PDF MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs)
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0919A L & S BAND / 1W SMD non - matched , Cannel temperature 175 C Tstg Storage temperature -65 to +175 C VGSO , Test conditions Limits Unit Min. Typ. Max. IDSS Saturated drain current VDS= 3V ,VGS=0V - 600 800 mA VGS(off) gm Gate to source cut-off voltage VDS= 3V ,ID=2.0mA -1 - -5 V Transconductance VDS= 3V ,ID=300mA - 260 - mS Po add


Original
PDF MGF0919A MGF0919A 30dBm 12dBm 300mA 50pcs)
Not Available

Abstract: No abstract text available
Text: www.aeroflex.com/voltreg September 9, 2011 FEATURES K K K K K K K K Manufactured using Linear , latest Linear Technology Corporation ® data sheets for their RH/LT137, which is available on-line at , MAXIMUM RATINGS PARAMETER RANGE -55 to +150 C 300 °C -65 to +150 C 30 (Neg , VREF 3V < (VIN - VOUT) < VDIFF MAX, 10mA < IOUT < IMAX -1.200 -1.300 V Line Regulation 2/, 4/ VOUT VIN 3V < (VIN - VOUT) < 30V, - 0.05 %/V Load Regulation 2/, 4


Original
PDF VRG8609/10 RH137 SCD8609
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic , V V mA mA mA W C C (Ta=25C) Parameter Test conditions 3rd order Modulation Distortion VDS= 3V ,ID=2.5mA VDS= 3V ,ID=300mA VDS=10V,ID=200mA,f=2.15GHz *1:Pin=20dBm, *2:Pin , cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain *4:Channel , 29.5 11 - Typ. 200 31 50 13 -45 20 Unit Max. -5 25 V mS dBm % dB dBc C /W


Original
PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA
2001 - smd transistor ab2

Abstract: T3D 62 T3D 67
Text: ‰¤ IOUT ≤ 1.25A TO-257AA and SMD .5 packages only -1.5 -0.1 1.5 % VDIFF = 3V , 5mA â , , 5mA ≤ IOUT ≤ 1.25A TO-257AA and SMD .5 packages only -1.5 1.5 % VDIFF = 3V , 5mA â , radiation hardened HS-117RH and HS-117EH are adjustable positive voltage linear regulators capable of , €¢ Electrically screened to DLA SMD # 5962-99547 The Intersil HS-117 has advantages over other industry , , “Total Dose Testing of the HS117 Linear Regulator” • SEE, “SEE Testing of the HS117 Linear


Original
PDF HS-117RH, HS-117EH HS-117RH HS-117EH 40VDC. HS-117RH MIL-STD-1835 FN4560 smd transistor ab2 T3D 62 T3D 67
5962R0521903KYA

Abstract: No abstract text available
Text: www.aeroflex.com/voltreg September 9, 2011 FEATURES K K K K K K K K Manufactured using Linear , latest Linear Technology Corporation ® data sheets for their RH/LT117, which is available on-line at , MAXIMUM RATINGS PARAMETER RANGE -55 to +150 C 300 °C -65 to +150 C 40 (Pos , CHARACTERISTICS 1/ SYM CONDITIONS (P  PMAX MIN MAX UNITS Reference Voltage 4/ VREF 3V , VIN 3V < (VIN - VOUT) < VDIFF MAX, IOUT = 10mA - 0.03 %/V Load Regulation 2/ 4


Original
PDF VRG8607/08 RH117 SCD8607 5962R0521903KYA
Not Available

Abstract: No abstract text available
Text: using Linear Technology Corporation ® Space Qualified RH117 and RH137 die Radiation performance K , latest Linear Technology Corporation ® data sheets for their RH/LT117 and RH/LT137, which is available , ABSOLUTE MAXIMUM RATINGS PARAMETER RANGE -55 to +150 C 300 °C -65 to +150 Operating (Junction) Temperature Range UNITS C Lead Temperature (soldering, 10 sec) Storage Temperature , Reference Voltage 4/ VREF 3V < (VIN - VOUT) < VDIFF MAX, 10mA < IOUT < IMAX 1.20 1.30 V


Original
PDF VRG8601/02 RH117 RH137 RH117) RH137) RH117 SCD8601
2014 - AP70t03gh

Abstract: SMD Capacitor symbols ANP030 AP2014 AP2014A B0530W SHOTTKY diode SMD pcb viking electronics
Text: General Description The AP2014 controller IC is designed to provide a low cost synchronous Buck regulator , linear regulators are simply too consumptive to be used when input supply is 5V or even in some cases , . This pin provides biasing for the internal blocks of the IC as well as power for the low side driver , AP2014/A Synchronous PWM Controller 1.5 Block Diagram Vc 6 3V 20uA SS FbLo Comp - 0.5V , Oscillator + 5 HDrv S Error Comp Q - 7 + 0.2V Bias Generator LDrv 3V 1.25V POR


Original
PDF ANP030 AP2014/A AP70t03gh SMD Capacitor symbols ANP030 AP2014 AP2014A B0530W SHOTTKY diode SMD pcb viking electronics
SMD resistors

Abstract: C65 004 S29AL016D70TFI01 LCD module 20X2 3.3v maxq1103 smd zener pj 3V IC LINEAR SMD toshiba lcd power board schematic 1500w inverter simple circuit MCR10EZHF1003
Text: Development and Debugging On-Board 3.3V and 1.8V Linear Regulators 4x4 Keypad Matrix Self-Destruct , Headers Two Smart Card Sockets (One Full-Size Socket and One SIM Socket) for Prototyping IC Card , -0EB1A104K C15, C16 2 22pF, 50V SMD capacitors (0603) ECJ-1VC1H220J C17­C21, C27­ C39, C42, C43, C45 , , C48, C55 C58 4 15pF, 50V SMD ceramic capacitors (0603) ECJ-1VC1H150J D1 1 QTY , -position connector, male plug (gold) 747250-4 3 390 ±1%, 1/8W SMD resistors (0805) MCR10EZPF3900 R4 1


Original
PDF MAXQ1103 MAXQ1103, MAXQ1103. com/MAXQ1103-KIT. SMD resistors C65 004 S29AL016D70TFI01 LCD module 20X2 3.3v smd zener pj 3V IC LINEAR SMD toshiba lcd power board schematic 1500w inverter simple circuit MCR10EZHF1003
Not Available

Abstract: No abstract text available
Text: K K K Manufactured using Linear Technology Corporation ® Space Qualified RH1084 and RH1185 , Terminator, High Efficiency Linear Regulators, Post Regulators for Switching Supplies, Constant Current , , applications information and typical applications see the latest Linear Technology Corporation ® data sheets , ) VDC C 300 Input Output Differential 25 30 VDC Load Current, maximum +6.0 , C Storage Temperature Range -65 to +150 C 5 °C/W Thermal Resistance, Junction


Original
PDF VRG8653/VRG8654 RH1084 RH1185 RH1185) RH1084 SCD8653
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic , W C C (Ta=25C) Parameter Test conditions 3rd order Modulation Distortion VDS= 3V ,ID=12.6mA VDS=10V,ID=700mA,f=2.15GHz *1:Pin=25dBm, *2:Pin=15dB *3:f1=2.15GHz,f2=2.16GHz Po , Power added Efficiency Linear Power Gain *4:Channel to case / *4 Above parameters, ratings , Unit Max. -5 6.5 V dBm % dB dBc C /W < High-power GaAs FET (small signal gain stage


Original
PDF MGF0952P MGF0952P 15GHz 25dBm 15GHz 700mA
2006 - 6 Pins Tact Push Button Switch

Abstract: PIC12F683 MCP1630 pic12f683 development board kit DS41211 22uH SMD ecg manual ic 12 lead ecg block diagram MCP9700 10BQ060PBF
Text: , fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Linear Active Thermistor, Mindi, MiWi, MPASM , applications, a higher output voltage is required that needs to be driven from a lower Input voltage (i.e., 3V , listed below. · The high voltage MOSFET's generally do not operate with a low 3V gate drive · The , 's difficult to locate a high voltage MOSFET of 40V to 60V with a lower gate drive of 3V . Also, high voltage , from 15V to 40V in 5V steps using a push button switch, S1, with 2% regulation. An MCP9700 Linear


Original
PDF MCP1630 DS51612A DS51612A-page 6 Pins Tact Push Button Switch PIC12F683 pic12f683 development board kit DS41211 22uH SMD ecg manual ic 12 lead ecg block diagram MCP9700 10BQ060PBF
2005 - MLX92213

Abstract: EN60749-15 JESD22-A113 JESD22-B102 JESD22-B106 electro magnetic flow meter 3 terminal hall effect rotary sensor "Hall Effect Sensor" a/SMD CODE TAW
Text: ) "Green" and "Pb-Free" Compliant Package Battery-operated / Handheld Appliances Rotary or Linear , Functional Diagram 2 General Description The MLX92213 Micropower Low-Voltage Latch Hall effect sensor IC , , VDD= 3V IDDav EN = VDD, VDD=1.8V IDDaw EN = VDD, IOUT = 0mA IDDsl EN = VDD, IOUT = 0mA IDDsb EN , Enabled Enabled Disabled EN = VDD o EN = VDD, TA=25 C, VDD= 3V EN = VDD o EN = VDD, TA=25 C, VDD= 3V , increase of the average current consumption of the whole module ( IC + capacitor). Using small capacitor


Original
PDF MLX92213 MLX9221iness ISO14001 Aug/09 MLX92213 EN60749-15 JESD22-A113 JESD22-B102 JESD22-B106 electro magnetic flow meter 3 terminal hall effect rotary sensor "Hall Effect Sensor" a/SMD CODE TAW
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0917A L & S BAND / 0.25W SMD non - , 2 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C VGSO Parameter Gate to sourcebreakdown voltage Electrical characteristics Symbol (Ta , -5.0 V IDSS Saturated drain current VDS= 3V ,VGS=0V VGS(off) gm Gate to source cut-off voltage VDS= 3V ,ID=0.5mA Transconductance VDS= 3V ,ID=75mA - 70 - mS Po add


Original
PDF MGF0917A MGF0917A 24dBm 50pcs)
2002 - marking code my SMD Transistor npn

Abstract: IC LM317 8pin lm317 8pin smd LM317 SMD 8pin SMD CODE LM317 lm317 so-8 LM317LMX LM317LM LM317 SMD transistor NSD134
Text: package, the SO-8 package, and 6-Bump micro SMD package. The LM317L is rated for operation over a -25°C to , TO-92, SO-8, or 6-Bump micro SMD package n Output is short circuit protected n See AN-1112 for micro SMD considerations n n n n n n n n n Connection Diagrams TO-92 Plastic package 8-Pin SOIC , www.national.com LM317L Connection Diagrams (Continued) micro SMD Laser Mark 6-Bump micro SMD , -92 8-Pin SOIC 6-Bump micro SMD Part Number LM317LZ LM317LM * LM317LIBP * LM317LIBPX Package


Original
PDF LM317L 100mA AN-1112 5-Aug-2002] marking code my SMD Transistor npn IC LM317 8pin lm317 8pin smd LM317 SMD 8pin SMD CODE LM317 lm317 so-8 LM317LMX LM317LM LM317 SMD transistor NSD134
2000 - EQFP-144

Abstract: eQFP144 LTC2323CUFD-16 DA6 C37
Text: LINEAR TECHNOLOGY, LT1819CMS8#PBF 53 1 U6 IC , FLIP FLOP, D-TYPE LOG, US8 ON SEMI., NL17SZ74USG 54 2 U8, U9 IC , VOLTAGE REFERENCE, MSOP8 LINEAR TECHNOLOGY, LTC6655BHMS84.096#PBF 55 2 U10, U21 IC , OP-AMP, MS8 LINEAR TECHNOLOGY, LT6202CS5#PBF 56 4 U11, U13, U14, U15 IC , MICROPOWER REGULATOR, SO8 LINEAR TECHNOLOGY, LT1763CS8#PBF 57 1 U12 IC , MICROPOWER NEG. REGULATOR, SOT-23 LINEAR TECHNOLOGY, LT1964ES5-SD#PBF 58 1 U16 IC , MICROPOWER


Original
PDF DC1996A LTC2323/LTC2321 16-Bit/14-Bit/12-Bit, 16-bit, 28-lead LTC2323 20ppm/Â LTC2323, dc1996afb EQFP-144 eQFP144 LTC2323CUFD-16 DA6 C37
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0913A L & S BAND / 1.2W SMD non - matched , Cannel temperature 175 C Tstg Storage temperature -65 to +175 C VGSO , V IDSS Saturated drain current VDS= 3V ,VGS=0V VGS(off) gm Gate to source cut-off voltage VDS= 3V ,ID=2.5mA Transconductance VDS= 3V ,ID=300mA - 200 - mS Po add , dBm % GLP Linear Power Gain VDS=10V,ID=200mA,f=1.9GHz 11 13 - dB NF Noise


Original
PDF MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs)
2000 - dupont mylar

Abstract: BPA06HPA SMD CODE LM317 LM317LMX
Text: package, the SO-8 package, and 6-Bump micro SMD package. The LM317L is rated for operation over a -25°C to , TO-92, SO-8, or 6-Bump micro SMD package n Output is short circuit protected n See AN-1112 for micro SMD considerations n n n n n n n n n Connection Diagrams TO-92 Plastic package 8-Pin SOIC , www.national.com LM317L Connection Diagrams (Continued) micro SMD Laser Mark 6-Bump micro SMD , -Pin SOIC 6-Bump micro SMD Part Number LM317LZ LM317LM * LM317LIBP * LM317LIBPX Package Marking LM317LZ


Original
PDF LM317L 100mA LM317LMX LM317LZ dupont mylar BPA06HPA SMD CODE LM317 LM317LMX
2000 - IC LM317 8pin

Abstract: lm317 to92 694-3-r2k LM317LMX 4 to 20ma current source lm317 lm317 8pin ic lm317 8pin smd LM317 SMD 8pin lm317 SO-8
Text: package, the SO-8 package, and 6-Bump micro SMD package. The LM317L is rated for operation over a -25°C to , TO-92, SO-8, or 6-Bump micro SMD package n Output is short circuit protected n See AN-1112 for micro SMD considerations n n n n n n n n n Connection Diagrams TO-92 Plastic package 8-Pin SOIC , www.national.com LM317L Connection Diagrams (Continued) micro SMD Laser Mark 6-Bump micro SMD , -Pin SOIC 6-Bump micro SMD Part Number LM317LZ LM317LM * LM317LIBP * LM317LIBPX Package Marking LM317LZ


Original
PDF LM317L 100mA LM317LM LM317 IC LM317 8pin lm317 to92 694-3-r2k LM317LMX 4 to 20ma current source lm317 lm317 8pin ic lm317 8pin smd LM317 SMD 8pin lm317 SO-8
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0915A L & S BAND / 4.5W SMD non - matched , PT Total power dissipation 18.7 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C Electrical characteristics Symbol (Ta , VDS= 3V ,VGS=0V - 2400 3000 mA VGS(off) gm Gate to source cut-off voltage VDS= 3V ,ID=10mA -1 -3 -5 V Transconductance VDS= 3V ,ID=800mA - 1000 - mS Po


Original
PDF MGF0915A MGF0915A 23dBm 800mA 50pcs)
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0920A L & S BAND / 1.6W SMD non - matched , Total power dissipation 8.3 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C Electrical characteristics Symbol (Ta=25C) Parameter Test , IDSS Saturated drain current VDS= 3V ,VGS=0V VGS(off) gm Gate to source cut-off voltage VDS= 3V ,ID=3.0mA Transconductance VDS= 3V ,ID=400mA - 370 - mS Po add Output


Original
PDF MGF0920A MGF0920A 32dBm 15dBm 400mA 50pcs)
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0918A L & S BAND / 0.5W SMD non - matched , Cannel temperature 175 C Tstg Storage temperature -65 to +175 C VGSO , V IDSS Saturated drain current VDS= 3V ,VGS=0V VGS(off) gm Gate to source cut-off voltage VDS= 3V ,ID=1.0mA Transconductance VDS= 3V ,ID=150mA - 130 - mS Po add , dBm % GLP Linear Power Gain VDS=10V,ID=150mA,f=1.9GHz 18 20 - dB NF Noise


Original
PDF MGF0918A MGF0918A 27dBm 150mA 50pcs)
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0916A L & S BAND / 0.2W SMD non - matched , power dissipation 1.5 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C Electrical characteristics Symbol (Ta=25C) Parameter Test conditions Limits Unit Min. Typ. Max. IDSS Saturated drain current VDS= 3V ,VGS=0V 150 200 250 mA VGS(off) gm Gate to source cut-off voltage VDS= 3V ,ID=0.1mA -1.5


Original
PDF MGF0916A MGF0916A 23dBm 100mA 50pcs)
Supplyframe Tracking Pixel