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3N170/D datasheet (1)

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3N170/D

Abstract: 3N170 3N171
Text: 3N170/ D 3N171 3N170/W 3N170/ D 1003 ,0025 0029 0035 0039 , fl628 1 0038 ELECTRICAL CHARACTERISTICS , VGS(th) Gate-Source Threshold Voltage 1.0 1.5 2.0 3.0 V VDS = 10 V, ID = 10 MA 3N17C) 3N17Î ' D (on


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PDF 3N170, 3N171 3N170/D 3N170 3N171
2010 - 1322

Abstract: No abstract text available
Text: ): V(BR)GSS (V): I( D ) Max. (A): Absolute Max. Power Diss. (W): Maximum Operating Temp (øC): I(GSS) Max


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PDF 3N170 3N170 com/3n170 1322
2011 - 3N170

Abstract: No abstract text available
Text: No file text available


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PDF 3N170 3N170
2004 - Not Available

Abstract: No abstract text available
Text: Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors , /High-R e l : N V(BR )DSS (V) : 25 V(BR )GSS (V) : 35 I( D ) Max . (A) : 30m I(DM) Max . (A) Pulse d I( D , ondition) : @I( D ) (A) (Te st C ondition) : I(DSS) Max . (A) : @V(DS) (V) (Te st C ondition) : @Te m p (C , ) : 200 @V(GS) (V) (Te st C ondition) : @I( D ) (A) (Te st C ondition) : g(fs) Min. (S) Trans. conduct. : g(fs) Max ; (S) Trans. conduct; : @V(DS) (V) (Te st C ondition) : @I( D ) (A) (Te st C ondition) : C(iss


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PDF 3N170
amelco

Abstract: UNION CARBIDE
Text: No file text available


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PDF 3N170, 3N171 3N170 OT-143 300mW 25-year-old, amelco UNION CARBIDE
3n170 intersil

Abstract: amelco
Text: No file text available


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PDF 3N170, 3N171 3N170 OT-143 300mW 25-year-old, 3n170 intersil amelco
Not Available

Abstract: No abstract text available
Text: 1000 13 5.0 50 30 10 30 15 V a US PF V ds = 10V, Vgs = 0, f = 1 MHz V d (SUB) = 10V, f =


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PDF 3N170/3N171 00CH42
1998 - 3N170

Abstract: 3N170-71 3N171 X3N170-71
Text: otherwise specified) C,B D 1003 G S Drain-Gate Voltage . . . . . . . . . . . . . . . . . .


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PDF 3N170 3N171 DS019 3N170-71 3N171 X3N170-71
3N171

Abstract: VN10MA C 828
Text: No file text available


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PDF 3N170/3N171 3N171 VN10MA C 828
3N170

Abstract: Hall 01E 3N171
Text: G E SOLI» STATE □ 1 DE|3fi750fll DD Hüll 3875081 G E SOLID STATE 3N170, 3N171 N-Channel Enhancement Mode MOSFET Switch FEATURES • Low Switching Voltages • Fast Switching Times • Low Drain-Source Resistance • Low Reverse Transfer Capacitance PIN CONFIGURATION_ TO-72 01E 11019 D T-ssr , , 3N171 Dl 3Ö7SDÖ1 D011D50 2 | 01E 11020 D m o" z n BDIKi^DIL ELECTRICAL CHARACTERISTICS , =10V, Vgs=0, f = 1.0MHz 5.0 cd(sub) Drain-Substrate Capacitance (Note 1) VD(SUB) = 10V,f=1.0MHz 5.0 * d


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PDF 3fi750fll 3N170, 3N171 3N170 3N170 Hall 01E 3N171
2003 - 3N171

Abstract: 3N170 3N170-1
Text: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds(on) 200 FAST SWITCHING td(on) 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) G Storage Temperature -55 to +135 °C 3 D 1 4 C -65 to +150 °C Operating Junction Temperature 2 S Maximum Temperatures Maximum Power Dissipation Continuous Power


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PDF 3N170 3N171 3N170 300mW 3N171 3N170-1
3N170

Abstract: 3N170-71 3N171 X3N170-71
Text: No file text available


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PDF 3N170/3N171 1B44322 3N170 3N170-71 3N171 X3N170-71
3N170

Abstract: HCT810
Text: OPTEK TECHNOLOGY INC Product Bulletin May 1989 4flE D ■tiTTflSûO 0001445 Tl? Preliminary OTK OPTEK Surface Mount Switching MOSFET Transistor Type HCT810 -r,^-: 225(5.71) PIN 1 , Manufacturer OPTEK TECHNOLOGY INC Type HCT810 MfiE D ^710500 00014 4t fl53 OTK Electrical Characteristics , .VGS = 0.f = 1.0MHz r d (5ub| Drain-Substrate Capacitance 5.0 PF ^disub) = 10-0 V, f = 1 0 MHz Switching Characteristics ^ d (on) Turn-On Delay Time 30 ns VDD=10.0V, lD(onl = 10.0 mA VGS M


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PDF HCT810 3N170 MIL-S-19500 3N170
1998 - 3N170-1

Abstract: 3N170 3N170-71 3N171 X3N170-71
Text: (TA = 25oC unless otherwise specified) C,B D 1003 G S Drain-Gate Voltage . . . . . .


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PDF 3N170 3N171 3N170-1 3N170-71 3N171 X3N170-71
Not Available

Abstract: No abstract text available
Text: OPTEK TECHNOLOGY INC 4fiE D bTTflSûO Q00144S Tl? OTK ¡C TM " " Preliminary , 75006 (214)323-2200 TLX 215849 Fax (214) 323-2396 64 OPTEK TECHNOLOGY INC MAE D ^7^0500 G D D m 4 b fl53 OTK T - 3 S T '- L S - Type HCT810 Electrical Characteristics (TA , , TA = 125°C Vg s = -35V,V o s= 0 Vg s = -35V,V d s = 0,T a = 125°C ^ D S S ^ G S S Gate Reverse Current 500 1.00 pA nA On Characteristics ^G S (T h ) ^ D S Io n ] ^ D (o n ) Gate


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PDF Q00144S HCT810 3N170 MIL-S-19500
Not Available

Abstract: No abstract text available
Text: RESISTANCE LOW REVERSE TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS (N O TE D (Ta= 25°C unless otherwise , VG S=° V D ,S U B f - 1 0 V V DD= - 1 ° V v G S (o ,r ' 10V id= i < (0 ° ma ' d ss r DS(on) ^ D (on) V DS(on) Drain-Source ON Resistance ON Drain Current Drain-Source ON Voltage Forward , ' d = ° V DS= - 1 0 V f=1 KHz 10 - 2.0 - lQ = 10 mA lD= 2.0mA > lYfSl C res C iss ^ d (s u b ) t d (on) V t d (off) tf 1000 - f=1 KHz f=1 MHz f=1 MHz 0 1.3 5.0 5.0 3.0 10


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PDF 3N170. 3N171 300ms.
1997 - 3N165

Abstract: 3N170 3N171
Text: No file text available


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PDF 3N170, 3N171 300ms. 3N165 3N170 3N171
2001 - M116 CALOGIC

Abstract: No abstract text available
Text: No file text available


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PDF 3N163 3N164 3N165 3N166 3N170 3N171 3N172 3N173 3N190 3N191 M116 CALOGIC
2N4351 MOTOROLA

Abstract: 3N170 3c169 DFM12 3N169
Text: MOTOROLA SC { D I O D E S / O P T O } 34 DE|b3b755S CID3ÛD41 5 636 72 55 M O T O RO LA SC (DIODES/OPTO) FIËLD-EFFECT TRANSISTORS DICE (continued) 3^ c 38041 T - JJT- Z - i D DIE NO. LINE SOURCE - DFM122 This die provides performance equal to or better than that of the following device types: 2N4351 3N169 3N170 3N171 MMCS0122 3C169 N-Channel MOSFET designed for low-power switching applications. METALLIZATION - Top


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PDF b3b755S DFM122 2N4351 3N169 3N170 3N171 MMCS0122 3C169 2N4351 MOTOROLA 3c169 DFM12
IT1701

Abstract: 2N4351 3N172 3N170 3N171 3N164 IT1750 M116 M117 TO-72
Text: HARRIS SEMICOND SECTOR S7E D PAS a swim Switching/Amplifier Transistors MOSFETs — N-Channel 43G2E71 0015701 0 BBHAS twj^J.^y^^qwjtM - •"' ftiiiftiiM T~Ot*~0 T-Z-7-Z5 vgs(th) bvdss 'dss •gss 91s rds(on) ' d (on) •ckon) PART v v PA PA /(mho 0 mA mA NUMBER PACKAGE Min Max Min Max Max Min Max Min Max COMMENTS 2N4351 TO-72 1.0 5.0 25 10nA 10 1000 300 3 High Input Z 3N170 TO-72 1.0 2.0 25 10nA 10 1000 200 10 High Input Z 3N171 TO-72 1.5 3.0 25 10nA 10 1000 200 10 High


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PDF 43G2E71 2N4351 3N170 3N171 IT1750 3N164 3N172 3N173 -10nA IT1700 IT1701 M116 M117 TO-72
2010 - 2N4351 MOTOROLA

Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola 3SK76 BC547 MOTOROLA
Text: No file text available


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PDF 2SK355 IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 2N4351 MOTOROLA MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola 3SK76 BC547 MOTOROLA
2M5457

Abstract: SOT-23 Rod MOSFET P channel SOT-23 N JFET
Text: S ST PA D 5 SST PA D 10 SST PA D 20 SST PA D 50 SSTPAD100 S ST D P A D 5 SST D P A D 1 0 , ax) 4 0.7 0.7 0.7 0.7 1.3 1.3 1.0 1.0 1.0 1.0 1.0 1.0 1.3 1.3 1.2 1.6 - D u al Single * m , * * * * * Single DPAD1 DPAD2 DPAD5 DPAD10 DPAD20 DPAD50 D PAD100 * 3M161 3N163 3N164 3N165 3N166 3N170


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PDF 2N4416/A 2N5484 2N5485 2N5486 PN4416 SST271 2M5457 2N5458 2N5459 DPAD10 SOT-23 Rod MOSFET P channel SOT-23 N JFET
2N4351 MOTOROLA

Abstract: 3N169 3N171 2N4351 3N170
Text: MOTOROLA SC XSTRS/R F 15E D | fc,3b?SS4 GGflbt.7fl 3 | f-^-ZS" MAXIMUM RATINGS Rating Symbol VolUB , Drain Current (Vqs = 10 Vdc, Vds = 10 Vdc) ' D (on) 10 — mAdc small-signal characteristics Drain-Source , ' d (on) — 3.0 ns Rise Time tr — 10 ns Turn-Off Delay Time «dloffl — 3.0 ns Fall Time tf - 15 ns MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 4-75 MOTOROLA SC XSTRS/R F 12E D | t3b725 , * -VQS(oH) ' d (on) y30* \ #10« - Z[n<50 0hms Vdo MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 4-76


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PDF 3N169 3N171 2N4351 t3b725Â 2N4351 MOTOROLA 3N170
3N165

Abstract: 3N166
Text: G E SOLI» STATE □ 1 3N165, 3N166 Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier FEATURES • Very High Impedance • High Gate Breakdown • Low Capacitance PIN CONFIGURATION TO-99 BOTTOM VIEW —■lo CO \pj/ IIO, O D a, 4 s D , 0239-4 2506 0239-1 DE| 307SDÛ1 GDI Id 17 S T- 2- ? ~ Z 7 DEVICE SCHEMATIC ABSOLUTE MAXIMUM RATINGS (Notei) 0a=25°C unless , =-20, VDB=0 -400 ' D (on) On Drain Current VdS=-15V1VGS=-10V -5 -30 mA VGS(th) Gate Source Threshold


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PDF 3N165, 3N166 307SDÃ 3N165 -500HA 3N170 300ms. 3N165 3N166
Not Available

Abstract: No abstract text available
Text: ultrasonically attached to the top contact. TYPICAL ELECTRICAL CHARACTERISTICS PARAM ETER MIN. bv d ss , 20V, id = i0mA, vBs = o + 1.5 + 5.0 V V d s = +15V, I d = +i0m A, Vb s = ° id s s 1000 gfs + .5 VGS(Th) v d s = + isv, V q s = 0 Vbs = 0 VDS = + 15V, Id , = 2mA, I = lKHz V q s = ± 4ov, Vds = 0 Crss 1.0 1.3 pF V d s = + 15V, I d = + 10mA, , f = 1MHz Ciss 4.5 5 pF V d s = + 15V, I d = 10mA, f = lKHz TYPIC AL D EVICE TYPES: E ' 16 n


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PDF 533mm) 0254mm) 3N169, 3N170, 3N171 03bflbG2
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