The Datasheet Archive

3N169 datasheet (10)

Part ECAD Model Manufacturer Description Type PDF
3N169 3N169 ECAD Model General Instrument Short Form Data 1976 Scan PDF
3N169 3N169 ECAD Model Motorola European Master Selection Guide 1986 Scan PDF
3N169 3N169 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
3N169 3N169 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
3N169 3N169 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
3N169 3N169 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
3N169 3N169 ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
3N169 3N169 ECAD Model Solitron Devices Low Power Field Effect Transistor, Case Style = TO-72, Geometry = FMN1... Scan PDF
3N169/D 3N169/D ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
3N169/W 3N169/W ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF

3N169 Datasheets Context Search

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2N4351 MOTOROLA

Abstract: 3N169 3N171 2N4351 3N170
Text: Range Tj 175 °C Storage Temperature Range Tsta -65 to +175 3N169 thru 3N171 CASE 20-03, STYLE 2 TO , characteristics Gate Threshold Voltage (Vds = 10 Vdc, Id = 10 /¿Adc) 3N169 3N170 3N171 VGS(Th) 0.5 1.0 1.5 , «4 OOflbtTT 5 I 4M«en _■3N169 thru 3N171 figure 1 — switching time test circuit INPUT (SCOPE Al ' -10


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PDF 3N169 3N171 2N4351 t3b725Â 2N4351 MOTOROLA 3N170
2011 - S0211

Abstract: VN03000 2SK738 nec 500t 2sk738 mosfet 2SK680 2SK73 motorola *6659 MPF6659 3N175
Text: MOSFET Item Number Part Number Manufacturer V(BR)OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) CI. Max (V) Max (F) tr Max (8) t, Max (8) TOper Max eC) Package Style N-Channel Enhancement-Type, (Cont'd) 2N71 09 2N7109 S0215 S0215 S0215 ZVN3302B TN0102N3 TN0602N3 TN0102N2 TN0602N2 SOF8104 SOFS105 SOF8200 SOF8201 2N403S 2N4038 2N4038 A390 3N169 3N169 3N170 3N171 3N176 S0205HO S02000C S02010C S0210 3N175 SOF9210 SOF9211 S0210MKN


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PDF 2N7109 S0215 ZVN3302B TN0102N3 TN0602N3 TN0102N2 TN0602N2 SOF8104 S0211 VN03000 2SK738 nec 500t 2sk738 mosfet 2SK680 2SK73 motorola *6659 MPF6659 3N175
2T3130A9

Abstract: HEP310 kp303g kt117 HEP-310 kt117b kt117a KT117G kt816g kt3102e
Text: Tranzistory -Speciální KT117AM KT117BM KT117G KT117GM KT117VM 2N1923 2N739 BSV56C, HEP310 2N844 2N1573 Øízené polem 2P934A KP302A KP302A KP302B KP303B KP303G KP303V KP305A KP307Z KP333A KP333B KP402A KP909A,B,V KP922A KP922A1 KP935G KP960A, B, V KP961A 2SK1409 BFR30 2N5459 2N3819 2SK513 2N3819 2N5459 2N5949 BF244A 3SR137 3SK162 BF998 3N169 NTR7N05 BUZ11, IRF540 F1014 2SK659 BLF242A Bipolární 2T3130A9 BFY80 2T3160A2 2N2906A 2T642A2


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PDF KT117AM KT117BM KT117G KT117GM KT117VM 2N1923 2N739 BSV56C, HEP310 2N844 2T3130A9 HEP310 kp303g kt117 HEP-310 kt117b kt117a KT117G kt816g kt3102e
3N169

Abstract: 2N7106 2n7109 SDF8200 3N171 3N170 2N7108 2N7107 2N7105 DSASW0036854
Text: Type Number 3N169 3N170 3N171 2N7104 2N7105 2N7106 2N7107 2N7108 2N7109 SDF8200 SDF8201 SDF8202 SDF8203 SDF9210 SDF9211 SDF9212 SDF9213 SDF9214 SDF9215 V Vgs Vgs (Br) Igss (h) (h) Case Geometry dss Max Max Max Style Min (pA) (V) (V) (V) TOFMN1.1 25 10 0.5 1.5 72 TOFMN1.1 25 10 1.0 2.0 72 TOFMN1.1 25 10 1.5 2.0 72 TOFMN1.2 30 10 0.5 2.0 72 TOFMNZ1.2 30 10 0.5 2.0 72 TOFMN1.2 10 10 0.1 2.0 72 TOFMNZ1.2 10 10 0.1 2.0 72 TOFMN1.2 20


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PDF 3N169 3N170 3N171 2N7104 2N7105 2N7106 2N7107 2N7108 2N7109 SDF8200 3N169 2N7106 2n7109 SDF8200 3N171 3N170 2N7108 2N7107 2N7105 DSASW0036854
3N169

Abstract: 3N170 3N171
Text: = lKHz TYPICAL DEVICE TYPES: 3N169 , 3N170, 3N171 E-16 ©ATïMtëX Devices, inc. IM-CHAIXINEL MOS


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PDF 533mm) 0254mm) 3N169 3N170 3N171
2N4351 MOTOROLA

Abstract: 3N170 3c169 DFM12 3N169
Text: MOTOROLA SC { D I O D E S / O P T O } 34 DE|b3b755S CID3ÛD41 5 636 72 55 M O T O RO LA SC (DIODES/OPTO) FIËLD-EFFECT TRANSISTORS DICE (continued) 3^ c 38041 T - JJT- Z - i D DIE NO. LINE SOURCE - DFM122 This die provides performance equal to or better than that of the following device types: 2N4351 3N169 3N170 3N171 MMCS0122 3C169 N-Channel MOSFET designed for low-power switching applications. METALLIZATION - Top


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PDF b3b755S DFM122 2N4351 3N169 3N170 3N171 MMCS0122 3C169 2N4351 MOTOROLA 3c169 DFM12
Not Available

Abstract: No abstract text available
Text: 3N169 , 3N170, 3N171 03bflbG2 DGGHO?1 7 4 ? ! ■SdOhODQ < o c o W t• — K3


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PDF 533mm) 0254mm) 3N169, 3N170, 3N171 03bflbG2
FMN1

Abstract: 3N190 3N189 3N188 3N173 3N172 3N169 3N166 3N165 3N164
Text: (mMhos) Max Max Max Number (TO-) Geometry (V) (pA) (V) (nA) (ohms) (uMhos) (pF) (pF) (nsec) 3N169 72


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PDF 3N163 3N164 3N172 3N173 2000u 1500u 4000u FMN1 3N190 3N189 3N188 3N169 3N166 3N165
P-Channel Depletion Mosfets

Abstract: mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet MFE3003 depletion mode mosfet 100 MHz N5484
Text: €” 1.0 25 72 2N4351 1.0 — 5.0 1.3 25 1.0 5.0 — 10 72 3N169 1.0 — 5.0 1.3 25 0.5 1.5 — 10 72


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PDF 2N5486 2N4416 2N4416A 2N5245 3N128* P-Channel Depletion Mosfets mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet MFE3003 depletion mode mosfet 100 MHz N5484
FMN1

Abstract: No abstract text available
Text: - 100 [ M ^ Î M Î M I Î L H © [5 ) Type Number 3N169 3N170 3N171 2N7104 2N7105


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PDF 3N163 3N164 3N172 3N173 2000u 1500u 4000u 4000u FMN1
2010 - 2N4351 MOTOROLA

Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola 3SK76 BC547 MOTOROLA
Text: 3N167 3N161 MFE3003 3N168 3N161 MFE3003 3N169 SN170 3N172 2N4352 3N173 2N4352 3N174 2N4352 3N163 3N175


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PDF 2SK355 IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 2N4351 MOTOROLA MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola 3SK76 BC547 MOTOROLA
3n169

Abstract: No abstract text available
Text: TYPES 3N169 , 3N170. 3N171 N-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD EFFECT TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 8 3 . M A R C H 1 9 7 3 EN H A N C E M E N T-T Y P E t MOS SILIC O N TRAN SISTO RS For Applications Requiring Very High Input Impedance, Such as Series and Shunt Choppers, Multiplexers, and Commutators Channel Cut O ff with Zero Gate Voltage Independent Substrate , A S 75222 w TYPES 3N169 , 3N170. 3N171 N-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD EFFECT


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PDF 3N169, 3N170. 3N171 3n169
F245B

Abstract: BF256 2N3820 BC264 vergleichsliste U1898E BFS21A MPF105 BF320 TIS69
Text: 3N213 3N214 3N215 3N216 3N217 3N169 3N170 3N171 FM/TVVerstärker / Mischer VHF-Vorverst. VHF-Mischer , 2N5546 2N5547 2N5549 3N155 3N155A 3N156 3N156A 3N157 3N157A 3N158 3N158A 3N160 3N161 3N163 3N164 - 3N169


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PDF 100-MHz F245B BF256 2N3820 BC264 vergleichsliste U1898E BFS21A MPF105 BF320 TIS69
1999 - intersil AN046

Abstract: ic cmos 4011 cd402t auto ranging dvm AN046 icl7106 application note and pin diagram of cd4029 CD4029 application note 4011 IC NAND ALL CD4029
Text: A3 23 G3 22 BP 21 Q1 0.47µF 100k S 47k 3N169 N CH. 1M D2


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PDF ICL7106 AN046 ID101s intersil AN046 ic cmos 4011 cd402t auto ranging dvm AN046 icl7106 application note and pin diagram of cd4029 CD4029 application note 4011 IC NAND ALL CD4029
IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 2n3819 replacement
Text: (mMhos) (uMhos) Ciss Max (pF) Crss Max (PF) Td(on) Max (nsec) 3N169 72 FMN1.1 25 10 .5 1.5 10 100 1000


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PDF UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 2n3819 replacement
2N3456 equivalent

Abstract: TIS88A equivalent J411 fet 2n5952 equivalent fet 2N4304 2n3820 equivalent 2N5248 equivalent 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
Text: TYPICAL DEVICE TYPES: 3N169 , 3N170, 3N171 [ ^ © M © ? © £ \ 1T£\[L©( IN I-C H A N N EL M O S FET


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PDF 20x40 111x109 2N3456 equivalent TIS88A equivalent J411 fet 2n5952 equivalent fet 2N4304 2n3820 equivalent 2N5248 equivalent 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
2000 - 2n3906 h11

Abstract: EPC1441PC8 945 MOTHERBOARD CIRCUIT diagram 945 U3d marking 2n3906- h11 LM393 3N157 MP2562 Z86C
Text: No file text available


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PDF Z8702400100ZEM Z87024 UM007801-0900 96C0712-001 2n3906 h11 EPC1441PC8 945 MOTHERBOARD CIRCUIT diagram 945 U3d marking 2n3906- h11 LM393 3N157 MP2562 Z86C
2NB906

Abstract: 2NB90 IN5313 IN5286 IN5296 solitrondevices IN5302 9218G IN5306 2N5902 TO-92
Text: - 1.0 - 100 - Type Number 3N169 3N170 3N171 2N7104 2N7105» 2N7106 2N7107» 2N7108 2N7109


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PDF UC4250» UC4250C» MIL-STD-883C, 2N2609 2N3821 2N3822 2N3823 2N4856 2N4857 2N48S8 2NB906 2NB90 IN5313 IN5286 IN5296 solitrondevices IN5302 9218G IN5306 2N5902 TO-92
1N5438

Abstract: tfc 5630 2N4193 germanium 2N5161 2n3817 motorola transistor bf 175 1N5159 J3029 A2023 transistor
Text: 3N169 th ru 3N174 P G G P S N S N S N s N F i e 1c - E f f e c t 125W SP SP 12 5W , 3N166 3N169 3N170 3N171 3N172 3N173 3N174 N N N N N N N N N N N N N N N N N N , 2N5668 M FE3003 3N169 3N169 3N169 M axm A mA J J J J J J J J J J J J J J J


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PDF 27TfC 1N5438 tfc 5630 2N4193 germanium 2N5161 2n3817 motorola transistor bf 175 1N5159 J3029 A2023 transistor
MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MPS5210 MFE131 equivalent mfe211 8C448 BC459C BC557 SOT23
Text: n e l M O S F E T s 18 18 72 72 72 72 18 2N3796 MFE825 2N4351 3N169 3N170 3N171 2N3797 0.4 0.5 1.0


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PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MPS5210 MFE131 equivalent mfe211 8C448 BC459C BC557 SOT23
LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: . 4-275 2n6324 . . . . . power 3n169 . . . . . 4-467 a5t3824 . . . 4-275 2n6325 . . . . . power


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PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
JE1100

Abstract: MFC8030 MFC8040 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 AN294 National Semiconductor Linear Data Book MC4039P
Text: No file text available


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PDF
IC HXJ 2038

Abstract: 1N52398 tfk 102 cny 70 DB5T hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: 3N156A 3N157 3N157A 3N158 3N158A 3N160 3N161 3N163 3N164 3N169 3N170 3N171 3N174 3N201 3N202 3N203 3N204


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PDF
germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Text: 2N4220A 2N4220A 2N4220A 2N4091 2N 4092 2N 4093 2N5668 2N5668 2N 5668 M FE3003 3N169 3N169 3N169 M axm A mA 2N 3684A 2N 3685A 2N 3686A 2N3687A 2N4091A 2N4092A 2N4093A 2N5561 2N


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PDF
silec

Abstract: 1N6227 2G300 GG 84 1n623 1N52398 IC HXJ 2038 chn 543 IN5240 1n48 zener diode
Text: 3N156A 3N157 3N157A 3N158 3N158A 3N160 3N161 3N163 3N164 3N169 3N170 3N171 3N174 3N201 3N202 3N203 3N204


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