The Datasheet Archive

3DD13001 datasheet (7)

Part ECAD Model Manufacturer Description Type PDF
3DD13001 3DD13001 ECAD Model Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
3DD13001 3DD13001 ECAD Model Liao Wei Transistor for Saving Lamp Original PDF
3DD13001 3DD13001 ECAD Model Transys Electronics Plastic-Encapsulated Transistors Original PDF
3DD13001 3DD13001 ECAD Model Others TO 92 PLASTIC ENCAPSULATE TRANSISTORS Scan PDF
3DD13001A1 3DD13001A1 ECAD Model China Hua Jing Electronics Group NPN Transistor TO-92 Original PDF
3DD13001-TO-251 3DD13001-TO-251 ECAD Model Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
3DD13001-TO-92 3DD13001-TO-92 ECAD Model Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF

3DD13001 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - 3DD13001

Abstract: No abstract text available
Text: 3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D B CLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001-B Range 17~23 20~26 E C G H 3 Emitter J 1 REF. Base A B C D E , 2 3DD13001 Elektronische Bauelemente 0.2A , 600V NPN Plastic-Encapsulated Transistor


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PDF 3DD13001 3DD13001-A 3DD13001-B 19-Aug-2011 3DD13001
IB-20mA

Abstract: hfe1 3DD13001 3DD13001A1
Text: 3DD13001 A1 1 1.5 3DD13001 A1 NPN TO-92 5.2max VCB0 VCE0 VEB0 IC Ptot Tj Tstg 600 400 9 0.45 0.8 150 -55 150 V V V A W 12.7min 2.1 Tamb= 25 - - - Ta=25 4.2max 5.0max 2 0.45max 0.45max 1.27 1.27 E C B 2.2 Tamb= 25 - - hFE1 hFE2 - - ICB0 IEB0 VCB , 5807228-2268 2299 1 2 0510 5800360 3DD13001 A1 3 hFE - IC hFE VCEsat -


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PDF 3DD13001 45max 100mA 100mA, IB-20mA hfe1 3DD13001A1
2007 - ic MA 2831

Abstract: 3DD13001 transistor 131-6
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR (NPN) TO-92 FEATURES power switching applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO , 28-31 31-34 34-37 37-40 Typical Characteristics 3DD13001 Jiangsu Changjiang


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PDF 3DD13001 ic MA 2831 3DD13001 transistor 131-6
3dd13001 TRANSISTOR

Abstract: 3DD13001
Text: 3DD13001 3DD13001 TRANSISTOR (NPN) FEATURES Power dissipation PCM: TO-251 1.2 W (Tamb=25) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 2. COLLECTOR 3EMITTER TJ, Tstg: -55 to +150 1 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol 2 3 unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA , IE


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PDF 3DD13001 O-251 3dd13001 TRANSISTOR 3DD13001
transistor 131-6

Abstract: 131-6 transistor 3dd13001 TRANSISTOR 3DD13001 npn 600v to92
Text: 3DD13001 3DD13001 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1. BASE PCM: 0.75 W (Tamb=25) 2. COLLECTOR Collector current ICM: 0.2 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic


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PDF 3DD13001 transistor 131-6 131-6 transistor 3dd13001 TRANSISTOR 3DD13001 npn 600v to92
2009 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR (NPN) 1. BASE 2. COLLECTOR FEATURES Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base , 23-26 26-29 B,Mar,2012 Typical Characterisitics 3DD13001 hFE Static Characteristic 40


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PDF 3DD13001
2009 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR (NPN) 1. BASE 2. COLLECTOR FEATURES Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base , 23-26 26-29 A,Jun,2011 Typical Characterisitics 3DD13001 hFE Static Characteristic 40


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PDF 3DD13001
ic MA 2831

Abstract: 3DD13001 3dd13001 TRANSISTOR
Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn 3DD13001 TRANSISTOR (NPN) TO-92 FEATURES power switching applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V , 28-31 31-34 34-37 37-40 Typical Characteristics 3DD13001 HAROM


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PDF 3DD13001 ic MA 2831 3DD13001 3dd13001 TRANSISTOR
131-6 to92

Abstract: 3DD13001 npn 600v to92 ic MA 2831
Text: 3DD13001 (NPN) TO-92 Bipolar Transistors TO-92 1. BASE 2. COLLECTOR 1.25MAX 4.45 5.21 3. EMITTER 2.92 MIN 4.32 5.33 Features power switching applications 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector -Base Voltage Collector-Emitter Voltage Emitter-Base , 37-40 3DD13001 (NPN) TO-92 Bipolar Transistors Typical Characteristics -


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PDF 3DD13001 25MAX 131-6 to92 npn 600v to92 ic MA 2831
2009 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR (NPN) TO-92 FEATURES Power switching applications 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO , (μs ) 1.4-2.4 (μs ) B,Mar,2012 Typical Characterisitics 3DD13001 hFE Static


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PDF 3DD13001
2004 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1. BASE PCM: 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current 0.2 A ICM: Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test


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PDF 3DD13001
2002 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR( NPN ) TO—126 FEATURES 1. EMITTER Power dissipation PCM : 1 W(Tamb=25℃) Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J ,T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless Parameter Symbol Test 2.COLLECTOR 3.BASE 123 otherwise


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PDF O-126 3DD13001 EB5-30 290TYP 090TYP
3DD13001

Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 TRANSISTOR (NPN) TO-251 FEATURES Power dissipation PCM: 1.2 W (Tamb=25) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 2. COLLECTOR 3EMITTER 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP


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PDF O-251 3DD13001 O-251 3DD13001
2007 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR (NPN) TO-251-3L FEATURES power switching applications 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value 2. COLLECTOR Units VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 0.2 A PC Collector Power


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PDF O-251-3L 3DD13001 O-251-3L
3DD13001

Abstract: datasheet of ic 555 A1070
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM : 1.25 WTamb=25 Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J T stg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Symbol 1.BASE 2.COLLECTOR 3.EMITTER unless Test otherwise conditions 1 2 3 specified MIN


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PDF 3DD13001 O--92 270TYP 050TYP 3DD13001 datasheet of ic 555 A1070
2002 - 300TYP

Abstract: 3DD13001 IC 7900
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM : 1.2 WTamb=25 Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J T stg: -55 to +150 ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test 1.BASE 2.COLLECTOR 3.EMITTER conditions MIN 1 2 TYP 3


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PDF O-251 3DD13001 O--251 091TYP 300TYP 300TYP 3DD13001 IC 7900
2004 - 3DD13001

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR (NPN) TO-251 FEATURES Power dissipation PCM: 1.2 W (Tamb=25) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 2. COLLECTOR 3EMITTER 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions


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PDF O-251 3DD13001 O-251 3DD13001
2004 - Not Available

Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1. BASE PCM: 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current 0.2 A ICM: Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown


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PDF 3DD13001
3DD13001

Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR(NPN) n cp □ «— r Y T 1 2 3 TO-92 1.EMITTER 2.COLLECTOR 3.BASE U RES Power dissipation Pcm: 0.75W (Tamb=25°C) ggv H Collector current Icm: 0.2 A Collector-base voltage V(br)cbo: 600 V Operating and storage junction temperature range Tj,Tstg: -55°C to + 150°C EL RICAL CHARACTER! (Tamb = 25C unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(br)cbo lc= 100 m A, Ie


OCR Scan
PDF 3DD13001 100mA
3DD13001

Abstract: No abstract text available
Text: m c c TO -126 P la s tic -E n c a p s u la te T ra n s is to rs ^ 3DD13001 T R A N S IS T O R (N P N ) FEATU R E S I p p é r ^ e tM jà r tlo n Pcm ; . 1W (Tamb=25"C) e a n i r e i i i ^ -base voltage V(BR)côo: 600 V &tyfÿniQtig.-sfttf s to ra g e ju n c tio n te m p e ra tu re ra n g e Tj,Tstg: -55°C to + 150°C ELECTRICAL CHARACTERISTICS (Tam b=25°C u n l e s s o t h e r w is e H r' i i sp e cifie d ) Collector-base breakdown voltage Collector-em itter


OCR Scan
PDF 3DD13001
Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s d882 to-92 KL4 SOT-23 BR S8050 bq d882 S8050 equivalent transistor D882 datasheet PCR100-6
Text: No file text available


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PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s d882 to-92 KL4 SOT-23 BR S8050 bq d882 S8050 equivalent transistor D882 datasheet PCR100-6
Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: No file text available


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PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
2015 - secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM c945 p 331 transistor SMBJ11CA SM1150AM SM4005A pzt649 SMBJ13CA BAS70B
Text: No file text available


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PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM c945 p 331 transistor SMBJ11CA SM1150AM SM4005A pzt649 SMBJ13CA BAS70B
2015 - secos gmbh

Abstract: SMBJ11CA SM4005A BZV55C12 BZV55C6V2 SMBJ160CA SMBJ16CA SMBJ14CA SMBJ130CA SMBJ13CA
Text: No file text available


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PDF SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A BZV55C12 BZV55C6V2 SMBJ160CA SMBJ16CA SMBJ14CA SMBJ130CA SMBJ13CA
2007 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) TO-92 FEATURE · power switching applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value Unit VCBO Collector -Base Voltage 600 VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation


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PDF 3DD13001B
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