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Part Manufacturer Description Datasheet Download Buy Part
LTC6256ITS8#TRPBF Linear Technology LTC6256 - Dual 6.5MHz, 65µA Power Efficient Rail-to-Rail I/O Op Amps; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC6252CS6#TRPBF Linear Technology LTC6252 - 720MHz, 3.5mA Power Efficient Rail-to-Rail I/O Op Amps; Package: SOT; Pins: 6; Temperature Range: 0°C to 70°C
LTC6253ITS8#TRPBF Linear Technology LTC6253 - Dual 720MHz, 3.5mA Power Efficient Rail-to-Rail I/O Op Amps; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC6255CS6#TRPBF Linear Technology LTC6255 - 6.5MHz, 65µA Power Efficient Rail-to-Rail I/O Op Amps; Package: SOT; Pins: 6; Temperature Range: 0°C to 70°C
LTC6247HTS8#PBF Linear Technology LTC6247 - Dual 180MHz, 1mA Power Efficient Rail-to-Rail I/O Op Amps; Package: SOT; Pins: 8; Temperature Range: -40°C to 125°C
LTC6247ITS8#PBF Linear Technology LTC6247 - Dual 180MHz, 1mA Power Efficient Rail-to-Rail I/O Op Amps; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C

34 sot-363 rf power amplifier Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - LNA ku-band

Abstract: ku-band pll lnb HSMS-2850 HSCH-9401 MGA-725M4 micro-X ceramic Package lna fet microwave transmitter 10GHz AT-64020 gaas fet 70 mil micro-X Package 900-1700MHz
Text: (LNA) 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier , , Ct typ. = 0.2pF @ 0 V, see AN1048 pi-attenuator design RF Amplifier RF Driver Buffer-High , and Product Suggestions Wireless Infrastructure - Basestation Multi-carrier Power Amplifier (MCPA , /dB @ 2GHz Device Type and Package RF Amplifier MGA-53543 MGA-52543 MGA-82563 MGA , =0 V 9 System Block Diagrams and Product Suggestions 3-4 GHz Systems IF1 Amp Tx RF


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PDF 11a/b/g) 5988-9866EN LNA ku-band ku-band pll lnb HSMS-2850 HSCH-9401 MGA-725M4 micro-X ceramic Package lna fet microwave transmitter 10GHz AT-64020 gaas fet 70 mil micro-X Package 900-1700MHz
1998 - 34063

Abstract: led driver circuit 34063 34063 application note 34063 application INA-34063 34063 schematic marking 34 sot-363 rf led driver 34063 18 sot-363 rf power amplifier ina 123
Text: amplifier stages to prevent oscillation that may occur as a result of RF feedback through the power , 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features · +8 dBm P1 dB , Package Marking GND 2 1 GND 1 2 34 · LO Buffer and Driver Amplifier for Cellular, Cordless , RFIC amplifier that offers excellent gain and output power for applications to 3.0 GHz. Packaged in , Maximum[1] Vd Device Voltage, RF output to ground V 6.0 Pin CW RF Input Power dBm


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PDF INA-34063 OT-363 SC-70) INA-34063 5967-5768E 34063 led driver circuit 34063 34063 application note 34063 application 34063 schematic marking 34 sot-363 rf led driver 34063 18 sot-363 rf power amplifier ina 123
1998 - 34063

Abstract: 34063 application note 34063 schematic 34063 Application Notes marking 34063 INA-34063 34063 circuit table
Text: . The Vd connection to the amplifier is RF bypassed by placing a capacitor to ground near the Vd pin of the amplifier package. The power supply connection to the RF Output pin is achieved by means of a RF , 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features · +8 dBm P1 dB , Silicon RFIC amplifier that offers excellent gain and output power for applications to 3.0 GHz. Packaged , output power of 8 dBm and noise figure of 4.5 dB at 1900 MHz, the INA-34063 is well suited for amplifier


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PDF INA-34063 OT-363 SC-70) INA-34063 OT-363 OT-143 5967-5768E 34063 34063 application note 34063 schematic 34063 Application Notes marking 34063 34063 circuit table
1999 - 34063 schematic

Abstract: 34063 application note 34063 34063 application led driver circuit 34063 ANA004R rfics marking 76 led driver 34063 ex 34063 34063 Application Notes
Text: amplifier stages to prevent oscillation that may occur as a result of RF feedback through the power , 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features · +8 dBm P1 dB , Package Marking GND 2 1 GND 1 2 34 · LO Buffer and Driver Amplifier for Cellular, Cordless , amplifier that offers excellent gain and output power for applications to 3.0 GHz. Packaged in an , Maximum[1] Vd Device Voltage, RF output to ground V 6.0 Pin CW RF Input Power dBm


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PDF INA-34063 OT-363 SC-70) INA-34063 5967-5768E 34063 schematic 34063 application note 34063 34063 application led driver circuit 34063 ANA004R rfics marking 76 led driver 34063 ex 34063 34063 Application Notes
ex 34063

Abstract: 34063 schematic 34063 application note
Text: W hot HEWLETT mLEM PACKARD 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA , 's INA-34063 is a Silicon RFIC amplifier that offers excellent gain and output power for applications to , Pin Ti T stg Parameter Device Voltage, RF output to ground CW RF Input Power Junction Temperature , bypassed by placing a capacitor to ground near the Vd pin of the amplifier package. The power supply , pin. Gnd2 o RF Output Example Layout for 50 Q Output Amplifier An example layout for an ampli


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PDF INA-34063 OT-363 SC-70) INA-34063 OT-363 OT-143 5967-5768E ex 34063 34063 schematic 34063 application note
1998 - ina 333 amplifier

Abstract: a006 INA-32063 INA-32063-BLK NF50 AN-A006
Text: amplifier stages to prevent oscillation that may occur as a result of RF feedback through the power , power for applications to 3.0 GHz. Packaged in an ultraminiature SOT- 363 package, it requires half , output to ground V 6.0 Pin CW RF Input Power dBm +7.0 Tj Junction Temperature , Vd connection to the amplifier is RF bypassed by placing a capacitor to ground near the Vd pin of , Details Gnd2 The power supply connection to the RF Output pin is achieved by means of a RF choke


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PDF INA-32063 OT-363 SC-70) INA-32063 5967-5769E ina 333 amplifier a006 INA-32063-BLK NF50 AN-A006
1999 - 5967-5769E

Abstract: class D power amplifier 6.78 MHz a006 INA-32063 INA-32063-BLK NF50 marking 320 SOT-363
Text: amplifier stages to prevent oscillation that may occur as a result of RF feedback through the power , Description Agilent's INA-32063 is a Silicon RFIC amplifier that offers excellent gain and output power , output to ground V 6.0 Pin CW RF Input Power dBm +7.0 Tj Junction Temperature , 3.22 5 The Vd connection to the amplifier is RF bypassed by placing a capacitor to ground near , Details Gnd2 The power supply connection to the RF Output pin is achieved by means of a RF choke


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PDF INA-32063 OT-363 SC-70) INA-32063 5965-8921E 5967-5769E 5967-5769E class D power amplifier 6.78 MHz a006 INA-32063-BLK NF50 marking 320 SOT-363
2006 - marking code ga sot 363

Abstract: MGA-85563-TR1G A004R MGA-85563 MGA-85563-TR1 NF50 marking CODE GA sot363 18 sot-363 rf power amplifier
Text: Thermal Resistance[2]: ch to c = 155°C/W Absolute Maximum[1] Pin CW RF Input Power Tch , keep RF from the DC supply lines and prevent resonant dips or peaks in the response of the amplifier . The DC schematic for an MGA-85563 amplifier circuit is shown in Figure 15. C3 RF Input C1 , approximately 50 mA. The higher current increases amplifier linearity by boosting output power (P1dB) by up , starting point for microstripline designs using the MGA-85563 amplifier . RF Input If for any reason


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PDF MGA-85563 MGA-85563 OT-363 OT-143 5989-1799EN 5989-4187EN marking code ga sot 363 MGA-85563-TR1G A004R MGA-85563-TR1 NF50 marking CODE GA sot363 18 sot-363 rf power amplifier
1998 - 31063 A

Abstract: diode marking c2 sma Hewlett-Packard transistor microwave INA-31063 NF50 LL2012-F sc-70 package pcb layout rfics marking 5 INA-31063-BLK a006
Text: Output RFC The Vd connection to the amplifier is RF bypassed by placing a capacitor to ground near the Vd pin of the amplifier package. The power supply connection to the RF Output pin is achieved , 50 RF Output and Vd Gnd 1 Vd RF Input Cblock Figure 10. Basic Amplifier Application , (RFC). Capacitor C3 provides RF bypassing for both the Vd pin and the power supply end of the RFC , a result of RF feedback through the power supply lines. Figure 18. Measured Isolation. 2.5


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PDF INA-31063 OT-363 SC-70) INA-31063 5967-5770E 31063 A diode marking c2 sma Hewlett-Packard transistor microwave NF50 LL2012-F sc-70 package pcb layout rfics marking 5 INA-31063-BLK a006
1999 - INA-31063

Abstract: 31063 A marking 579 sot363 AN-A006 a006 ANA004R INA-31063-BLK LL2012-F NF50
Text: Output RFC The Vd connection to the amplifier is RF bypassed by placing a capacitor to ground near the Vd pin of the amplifier package. The power supply connection to the RF Output pin is achieved , 50 RF Output and Vd Gnd 1 Vd RF Input Cblock Figure 10. Basic Amplifier Application , Power on Assembled 50 Amplifier at 900 MHz and 1900 MHz. An important specification when selecting , cascades of amplifier stages to prevent oscillation that may occur as a result of RF feedback through the


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PDF INA-31063 OT-363 SC-70) INA-31063 5967-5770E 5968-1238E 31063 A marking 579 sot363 AN-A006 a006 ANA004R INA-31063-BLK LL2012-F NF50
8 pin IC 34063

Abstract: 34063 34063 schematic MARKING A2a SOT363
Text: What PA C KLETD HEW T 1 "KM AR 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data , , RF output to ground CW RF Input Power Junction Temperature Storage Temperature Units V dBm , is RF bypassed by placing a capacitor to ground near the Vc] pin of the amplifier package. The power supply connection to the RF Output pin is achieved by means of a RF choke (inductor). The value , feedback through the power supply lines. For this demonstration circuit, the value chosen for the RF


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PDF INA-34063 OT-363 SC-70) 5967-5768E 8 pin IC 34063 34063 34063 schematic MARKING A2a SOT363
1997 - Not Available

Abstract: No abstract text available
Text: Parameter Maximum Device Voltage CW RF Input Power Channel Temperature Storage Temperature Units V dBm °C °C , -85563 amplifier circuit is shown in Figure 15. RF Input 85 C1 C3 +3V RFC RF Output Rb C2 , . The higher current increases amplifier linearity by boosting output power (P1dB) by up to 8 dB , starting point for microstripline designs using the MGA-85563 amplifier . RF Input 20 15 10 10 , undesirable resonance in the gain response of the amplifier . While it might be considered an effective RF


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PDF MGA-85563 OT-363 SC-70) MGA-85563 OT-363 OT-143 sin017) MGA-85563-TR1
AN-A006

Abstract: No abstract text available
Text: amplifier package. The power supply connection to the RF Output pin is achieved by , Silicon RFIC amplifier that offers excellent gain and output power for applications to 3.0 GHz. Packaged , Parameter Device Voltage, RF output to ground CW RF Input Power Junction Temperature Storage Temperature , ^ terminal of the amplifier . Blocking capacitors are normally placed in series with the RF Input and the RF , terminals, the Vj pin and the RF Output pin. Example Layout for 50 £2 Output Amplifier An example layout


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PDF INA-32063 OT-363 SC-70) INA-32063 OT-363 OT-143 5967-5769E AN-A006
1998 - Not Available

Abstract: No abstract text available
Text: Maximum[1] Maximum Device Voltage Pin CW RF Input Power Tch Channel Temperature °C , -85563 amplifier circuit is shown in Figure 15. C3 RF Input C1 Rb 85 MGA-85563 Applications , microstripline designs using the MGA-85563 amplifier . RF Input 85 Id (mA) 30 RF Output Rb , amplifier . While it might be considered an effective RF practice, it is recommended that the PCB pads for , GHz Circuit. DC bias is applied to the MGA-85563 through the RFC at the RF Output pin. The power


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PDF MGA-85563 OT-363 SC-70) MGA-85563 MGA-85563-TR1 MGA-85563-BLK 5966-3109E 5966-4894E
2009 - RF5632

Abstract: PNP-1090-P22 UMX-333-D16-G UMX-254-D16-G UMX-406-D16 RF1194 SPF-5043Z UMX-519-D16-G spf-5122z SHF-0289
Text: Amplifier Modules 1 GHz Power Doublers. 19 , - - High Power Amplifiers Number Description SZA-2044Z 1W Class AB Amplifier NEW , RF5322 RF5722 RF5622 RF5125 RF5112 Driver Amplifier Linear Power Amplifier Linear Power Amplifier Linear Power Amplifier Linear PA with 2Fo filter Linear PA with 2Fo filter Linear Power Amplifier Linear Power Amplifier 2400 to 2500 2400 to 2500 2400 to 2500 2400 to 2500 2400 to 2500


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2004 - diode marking c2 sma

Abstract: MGA-85563 34 sot-363 rf power amplifier sc-70 package pcb layout gaas Low Noise Amplifier power amplifier circuit diagram with pcb layout low noise amplifier ghz MGA-85563-TR1 NF50 marking CODE GA sot363
Text: amplifier that offers low noise figure and high gain from 0.8 to 6 GHz. Packaged in an ultraminiature SOT- 363 , keep RF from the DC supply lines and prevent resonant dips or peaks in the response of the amplifier . The DC schematic for an MGA-85563 amplifier circuit is shown in Figure 15. C3 RF Input C1 , approximately 50 mA. The higher current increases amplifier linearity by boosting output power (P1dB) by up , starting point for microstripline designs using the MGA-85563 amplifier . RF Input If for any reason


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PDF MGA-85563 OT-363 OT-143 OT-363 SC-70) 5989-1799EN 5989-4187EN diode marking c2 sma 34 sot-363 rf power amplifier sc-70 package pcb layout gaas Low Noise Amplifier power amplifier circuit diagram with pcb layout low noise amplifier ghz MGA-85563-TR1 NF50 marking CODE GA sot363
2005 - AV02-2516EN

Abstract: 85x Resistor MGA-85563-TR1G NF50
Text: Symbol Vd, max Pin Tch TSTG Parameter Maximum Device Voltage CW RF Input Power Channel Temperature , schematic for an MGA-85563 amplifier circuit is shown in Figure 15. RF Input 85 C1 C3 +3V RFC RF , starting point for microstripline designs using the MGA85563 amplifier . RF Input Rb Figure 18. RF , line loss at the amplifier 's input. 0.5 C (50 ) 0.2 1 2 B A (opt) RF Input 0.2 0.5 L1 MLIN , -85563 through the RFC at the RF Output pin. The power supply connection is bypassed to ground with capacitor C3


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PDF MGA-85563 MGA-85563 OT-363 OT-143 5989-4187EN AV02-2516EN 85x Resistor MGA-85563-TR1G NF50
1998 - INA-31063

Abstract: No abstract text available
Text: Gnd1 Gnd1 RF Output RFC The Vd connection to the amplifier is RF bypassed by placing a capacitor to ground near the Vd pin of the amplifier package. The power supply connection to the RF , , output to ground Pin CW RF Input Power Tj Junction Temperature °C 150 T STG , Figure 17. Measured Input Power vs. Output Power on Assembled 50 Ω Amplifier at 900 MHz and 1900 MHz , provides RF bypassing for both the Vd pin and the power supply end of the RFC. Capacitor C4 is optional


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PDF INA-31063 OT-363 SC-70) 5967-5770E 5968-1238E INA-31063
2007 - Not Available

Abstract: No abstract text available
Text: Current (ICE) Max Device Voltage (VCE) Max. RF Input Power * (See Note) Max. Junction Temp. (TJ) Operating , Information SGC-2463Z 0.05-4.0 GHz Cascadeable MMIC Amplifier SOT- 363 PCB Pad Layout Dimensions in inches , recommended. 3. RF I/O lines are 50 SOT- 363 Nominal Package Dimensions Dimensions in inches [millimeters , high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active , 23.4 dBm at 1950 MHz · Robust 1000V ESD, Class 1C HBM Applications · PA Driver Amplifier · Cellular


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PDF SGC-2463Z SGC-2463Z S21I-MMIC EDS-104975 OT-363
Not Available

Abstract: No abstract text available
Text: Device Voltage CW RF Input Power Channel Temperature Storage Temperature Units V dBm °C °C , the MGA-85563 amplifier . Input p? 1 o -0 R bQ l llfllj Figure 18. RF Layout. Adequate , of the amplifier . While it might be considered an effective RF practice, it is recom­ mended that , RF Output pin. The power supply connection is bypassed to ground with capacitor C3. Provi­ sion , WhoI P A C K A R D E LT mLEM HWE T 3-volt, Low Noise Amplifier for 0 .8 -6 GHz Applications


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PDF MGA-85563 OT-363 SC-70) MGA-85563 OT-363/SC-70) MGA-85563-TR1 MGA-85563-BLK
2009 - pnp-1500-p22

Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H spf-5189z UMX-119-D16-G ums-2000-A16-g spf-5122 UMX-406-D16
Text: Amplifier Modules 1 GHz Power Doublers. 19 , . in mm) Driver Amplifier Linear Power Amplifier Linear Power Amplifier Linear Power Amplifier Linear Power Amplifier Linear Power Amplifier Linear Power Amplifier Linear Power Amplifier Linear Power Amplifier Linear Power Amplifier Linear Power Amplifier Linear Power Amplifier 2400 to 2500 , FMA3011 FMA3014 FMA3051 High Gain X-Band MMIC Amplifier Die Amplifier Die Amplifier Die Power


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PDF
sot363 marking g54

Abstract: sot-363 Marking 411 channel p gft50
Text: RF from the DC supply lines and prevent resonant dips or peaks in the response of the amplifier . The DC schematic for an MGA-85563 amplifier circuit is shown in Figure 15. +3V RF Output Figure , . The higher current increases amplifier linearity by boosting output power (Pidfl) by up to 8 dB , the high fre quency RF performance of the MGA-85563. The layout is shown with a footprint of a SOT- 363 , applied to the MGA-85563 through the RFC at the RF Output pin. The power supply connection is bypassed to


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PDF MGA-85563 OT-363 SC-70) MGA-85563 OT-363 OT-143 MGA-85563-TRI MGA-85563-BLK sot363 marking g54 sot-363 Marking 411 channel p gft50
2007 - ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N QFN2020 NE851M13 ne3210s01 NE321000
Text: Out IF In IF Out RF In UPC3220GR Out-of-Band Tuner UPC3230GR AGC Amplifier Power , 22 24 26 14 13 +7.5 34 S06 / TB SOT- 363 UPC3227TB 3 3200 5 4.0 , SOT- 363 SOT- 363 SOT- 363 Notes: 1. PIN = 0 dBm. 2. RF = 900 MHz, LO = 660 MHz, PLO = -5 , UPC8112TB Downconverters Power Save LO In IF Out RF In VCC GND IF In Power Save RF , Ohio TMC ­ Cincinnati (513) 984-6720 Manitoba CEL West/Central Sales (913) 780-1380 NEC RF &


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PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N QFN2020 NE851M13 ne3210s01 NE321000
2008 - SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 T6N 700 UPC8236 NE68000 s-parameters
Text: 14 13 +7.5 34 S06 / TB UPC3227TB 3 SOT- 363 3200 5 4.0 4.8 6.0 , 11 +2.5 12 +10.0 S06 / TB SOT- 363 Notes: 1. PIN = 0 dBm 2. RF = 900 MHz, LO = 660 , UPC3220GR Out-of-Band Tuner UPC3230GR AGC Amplifier Power Save 1 16 1 2 15 2 , Power Save LO In IF Out RF In VCC GND IF In Power Save RF Out VCC GND 24 , NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS


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PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 T6N 700 UPC8236 NE68000 s-parameters
2007 - Not Available

Abstract: No abstract text available
Text: Current (ICE) Max Device Voltage (VCE) Max. RF Input Power * (See Note) Max. Junction Temp. (TJ) Operating , Preliminary Information SGC-4463Z 0.05-4.0 GHz Cascadeable MMIC Amplifier SOT- 363 PCB Pad Layout , thickness is recommended. 3. RF I/O lines are 50 SOT- 363 Nominal Package Dimensions Dimensions in inches , high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active , = 27 dBm at 1950 MHz · Robust 1000V ESD, Class 1C HBM Applications · PA Driver Amplifier · Cellular


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PDF SGC-4463Z SGC-4463Z EDS-104979 OT-363
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