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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
CUZ30V CUZ30V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
CUZ20V CUZ20V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation
CEZ6V2 CEZ6V2 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
CUZ6V8 CUZ6V8 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Visit Toshiba Electronic Devices & Storage Corporation
CUZ12V CUZ12V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
MUZ5V6 MUZ5V6 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

310 variable capacitance diode Datasheets Context Search

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Ample Communications

Abstract: HVU365 GSM repeater circuit at 400 310 variable capacitance diode HVL400C RKV600KP RKV601KP RKV602KP RKV603KP RKV605KP
Text: 16 Diode Diodes for Mobile Communications 2. Variable Capacitance Diodes for VCO , HVL399C HVL400C Vcont MP6 Variable capacitance diode RKV600KP RKV601KP RKV602KP RKV603KP RKV604KP RKV605KP RKV650KP RKV652KP Figure 2.1 Variable Capacitance Diodes for VCO REJ27G0027 , circuit Surge absorption circuit REJ27G0027-0100/Rev.1.00 : PIN diodes : Variable capacitance , Diodes for Mobile Communications 3.1 Characteristics of Variable Capacitance Diodes 60 f = 1MHz


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PDF REJ27G0027-0100/Rev Ample Communications HVU365 GSM repeater circuit at 400 310 variable capacitance diode HVL400C RKV600KP RKV601KP RKV602KP RKV603KP RKV605KP
2011 - diode V105

Abstract: CHL8510 CHL8112A
Text: highside MOSFET input capacitance when PWM signal goes high. I_out 105A to 10A V_out without diode , HighEfficiency Variable Gate MOSFET Driver CHL8515 FEATURES Ideal for Server Memory , Propagation delays < 10ns Integrated bootstrap diode Capable of high switching frequencies from 200kHz , capacitance used in highefficiency designs. It is uniquely designed to operate from a 5V source, minimizing , . Used in conjunction with IR's Variable Gate Drive controller feature, or a 5V standby source in sleep


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PDF CHL8515 200kHz diode V105 CHL8510 CHL8112A
2011 - diode V105

Abstract: V105 MARKING CODE IR3598 MOSFET Drivers 40V noise diode v105 CHL8510 pwm variable frequency drive circuit diagram variable capacitor 3nF 3nF CAPACITOR CHL8112A
Text: highside MOSFET input capacitance when PWM signal goes high. I_out 105A to 10A V_out without diode , HighEfficiency Variable Gate MOSFET Driver CHL8550 FEATURES Ideal for Server Memory , Propagation delays < 10ns Integrated bootstrap diode Capable of high switching frequencies from 200kHz , capacitance used in highefficiency designs. It is uniquely designed to operate from a 5V source, minimizing , . Used in conjunction with IR's Variable Gate Drive controller feature, or a 5V standby source in sleep


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PDF CHL8550 200kHz 10pin diode V105 V105 MARKING CODE IR3598 MOSFET Drivers 40V noise diode v105 CHL8510 pwm variable frequency drive circuit diagram variable capacitor 3nF 3nF CAPACITOR CHL8112A
HD81504

Abstract: hitachi pbx HA22004 HD64941 HD63084 HD64530 HA12158 HVU354 Hitachi hg51 PF0049A
Text: FET VCO High frequency transistor Variable capacitance diode IF PLL frequency synthesizer , a A sIC High frequency transistor Variable capacitance diode PLL frequency synthesizer Modem , + 1st mixer VCO High frequency transistor GaAS IC Variable capacitance diode Transistor for OSC , Variable capacitance diode Transistor for OSC/buffer Products 2SC4592 series, 2SC4791 series HVU350 , . built-in EEPROM EEPROM EPROM SRAM Products HD66710, HD66712, HD66720 [H8/ 310 ], [H8/3101] [H N58V257


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PDF HD64540] HD64541] HD81806] HD81803] HD81820 HD81504 hitachi pbx HA22004 HD64941 HD63084 HD64530 HA12158 HVU354 Hitachi hg51 PF0049A
1999 - CV 203

Abstract: KV1310NT kv1310 TO92-3 Package Dimensions 310 variable capacitance diode
Text: KV1310NT VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS s Very Low Operating Voltage s , capacitance diode was specially developed for use as tuning elements in car radios, radio cassettes, and , Current Diode Capacitance 2 V REV = 2.0 V, f = 1 MHz C4 Diode Capacitance 4 C6 TYP V , V, f = 1 MHz 26.49 35.06 pF Diode Capacitance 6 V REV = 6.0 V, f = 1 MHz 19.24 25.46 pF C8 Diode Capacitance 8 V REV = 8.0 V, f = 1 MHz 16.05 21.25 pF RS


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PDF KV1310NT O92-3) KV1310NT O92-3 IC-xxx-KV1471E 0798O0 CV 203 kv1310 TO92-3 Package Dimensions 310 variable capacitance diode
2006 - Torroid

Abstract: SOEAIJ-14 K1648 MC1648 spice model EL14 KEL1648 MC100EL1648 MC1648 MC100EL1648DG 365 pF variable capacitor
Text: variable capacitance values. The 1.0 kW resistor in Figure 11 is used to protect the varactor diode during , nH) C = 3.0-35pF Variable Capacitance (@ 10 pF) Note 1 Capacitor for tank may be variable type , pF Variable Capacitance (@ 10 pF) 15 * The 1200 W resistor and the scope termination impedance , = 3.0-35 pF Variable Capacitance (@ 10 pF) 40 20 * The 1200 W resistor and the scope , Copper wire (@ 40 nH) C = 3.0-35 pF Variable Capacitance (@ 10 pF) Note 1 Capacitor for tank may be


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PDF MC100EL1648 MC100EL1648 K1648 SOEIAJ-14 KEL1648 MC100EL1648/D Torroid SOEAIJ-14 K1648 MC1648 spice model EL14 KEL1648 MC1648 MC100EL1648DG 365 pF variable capacitor
2008 - K1648

Abstract: EL14 KEL1648 MC100EL1648 MC1648
Text: Capacitance (@ 10 pF) Note 1 Capacitor for tank may be variable type. (See Tank Circuit #3.) Note 2 Use , #T20-22, 8 turns #30 Enameled Copper wire (@ 40 nH) C = 3.0-35 pF Variable Capacitance (@ 10 pF) 15 , wire (@ 40 nH) C = 3.0-35 pF Variable Capacitance (@ 10 pF) Note 1 Capacitor for tank may be variable , , the tank capacitor, C, is replaced with a varactor diode whose capacitance changes with the voltage , above VEE. Typical transfer characteristics employing the capacitance of the varactor diode (plus the


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PDF MC100EL1648 MC100EL1648 K1648 SOEIAJ-14 KEL1648 MC100EL1648/D K1648 EL14 KEL1648 MC1648
2006 - lqh3c220

Abstract: 22uH 250mA
Text: conduction losses in the diode , while the diode capacitance (CT or CD) represents the switching losses. For diode selection, both forward voltage drop and diode capacitance need to be considered. Schottky diodes with higher current ratings usually have lower forward voltage drop and larger diode capacitance , which , CONVERTER Pin Assignments Pin Descriptions Name Description Switch Pin. Connect inductor/ diode here , Current Conditions VSHDN = 0V Min. 2.5 -280 10 -0.75 85 -1.5 - Typ. - 310 45 1.9 0.1 1.0 90


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PDF AP1521 AP1521 lqh3c220 22uH 250mA
2001 - k1648

Abstract: MC100EL1648 MC1648 EL14 Capacitance Varactor Diode KV 3600 uf 35 volt ac capacitor veractor 1200 ohm RESISTOR
Text: variable capacitance values. The 1.0 kW resistor in Figure 11 is used to protect the varactor diode during , ). A varactor diode may be incorporated into the tank circuit to provide a voltage variable input , #T20­22, 8 turns #30 Enameled Copper wire (@ 40 nH) C = 3.0­35pF Variable Capacitance (@ 10 pF) 0.01 , Enameled Copper wire (@ 40 nH) C = 3.0­35 pF Variable Capacitance (@ 10 pF) 15 * The 1200 ohm , turns #30 Enameled Copper wire (@ 40 nH) C = 3.0­35 pF Variable Capacitance (@ 10 pF) 40 20


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PDF MC100EL1648 MC100EL1648 MC1648. r14525 MC100EL1648/D k1648 MC1648 EL14 Capacitance Varactor Diode KV 3600 uf 35 volt ac capacitor veractor 1200 ohm RESISTOR
2007 - K1648

Abstract: marking codes transistors soic-14 kel16 KEL1648 EL14 MC100EL1648 MC1648 soic14 150 symbol of varactor diode and equivalent circuit k164
Text: 3.0-35pF Variable Capacitance (@ 10 pF) 0.01 mF 5 (5) 0.1 mF 8 pin (14 pin) Lead Package 0.1 , pF Variable Capacitance (@ 10 pF) 15 * The 1200 W resistor and the scope termination impedance , ) C = 3.0-35 pF Variable Capacitance (@ 10 pF) 40 20 * The 1200 W resistor and the scope , turns #30 Enameled Copper wire (@ 40 nH) C = 3.0-35 pF Variable Capacitance (@ 10 pF) Note 1 , 6, the tank capacitor, C, is replaced with a varactor diode whose capacitance changes with the


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PDF MC100EL1648 MC100EL1648 SOEIAJ-14 KEL1648 506AA K1648 MC100EL1648/D K1648 marking codes transistors soic-14 kel16 KEL1648 EL14 MC1648 soic14 150 symbol of varactor diode and equivalent circuit k164
2004 - variable frequency drive circuit diagram

Abstract: on line ups circuit schematic diagram SQUARE WAVE TO SINE WAVE schematic diagram 3 phase AC variable circuit diagram varactor diode datasheet RF AGC Amplifier variable capacitor sine wave ups designing Automatic Gain Control 50 hz Oscillator
Text: variable capacitance values. The 1.0 kW resistor in Figure 11 is used to protect the varactor diode during , Metal torroid #T20-22, 8 turns #30 Enameled Copper wire (@ 40 nH) C = 3.0-35pF Variable Capacitance (@ , #T20-22, 8 turns #30 Enameled Copper wire (@ 40 nH) C = 3.0-35 pF Variable Capacitance (@ 10 pF) 15 , Copper wire (@ 40 nH) C = 3.0-35 pF Variable Capacitance (@ 10 pF) Note 1 Capacitor for tank may be variable type. (See Tank Circuit #3.) Note 2 Use high impedance probe (> 1 MW ). CAPACITANCE (F


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PDF MC100EL1648 MC100EL1648 MC1648. MC100EL1648/D variable frequency drive circuit diagram on line ups circuit schematic diagram SQUARE WAVE TO SINE WAVE schematic diagram 3 phase AC variable circuit diagram varactor diode datasheet RF AGC Amplifier variable capacitor sine wave ups designing Automatic Gain Control 50 hz Oscillator
2006 - LQH3C220

Abstract: TAIYO YUDEN JMK107BJ105 LQH3C ORDERING AP1521W JMK107BJ105
Text: voltage drop of Schottky diode represents the conduction losses in the diode , while the diode capacitance , voltage drop and larger diode capacitance , which can cause significant switching losses at the 1MHz , inductor/ diode here. Minimize trace area at this pin to reduce EMI GND pin Feedback Pin. Reference voltage , -280 10 -0.75 85 -1.5 - Typ. - 310 45 1.9 0.1 1.0 90 320 350 0.01 -65 Max. -10 340 100 2.5 , X7R types are recommended because they retain their capacitance over wider voltage and temperature


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PDF AP1521 OT25-5L AP1521 LQH3C220 TAIYO YUDEN JMK107BJ105 LQH3C ORDERING AP1521W JMK107BJ105
2008 - A3310

Abstract: No abstract text available
Text: 3.0−35pF Variable Capacitance (@ 10 pF) Note 1 Capacitor for tank may be variable type. (See Tank Circuit , 3.0−35 pF Variable Capacitance (@ 10 pF) 40 20 * The 1200 W resistor and the scope termination , Enameled Copper wire (@ 40 nH) C = 3.0−35 pF Variable Capacitance (@ 10 pF) Note 1 Capacitor for tank , 6, the tank capacitor, C, is replaced with a varactor diode whose capacitance changes with the , above VEE. Typical transfer characteristics employing the capacitance of the varactor diode (plus the


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PDF MC100EL1648 MC100EL1648 KEL1648 506AA K1648 MC100EL1648/D A3310
2006 - SOEAIJ-14

Abstract: MMBV609 purposes of varactor diode symbol of varactor diode and equivalent circuit Variable Capacitance Diodes K1648 D 3410 A enamelled copper wire tables EL14 KEL1648
Text: variable capacitance values. The 1.0 kW resistor in Figure 11 is used to protect the varactor diode during , torroid #T20-22, 8 turns #30 Enameled Copper wire (@ 40 nH) C = 3.0-35pF Variable Capacitance (@ 10 pF , #T20-22, 8 turns #30 Enameled Copper wire (@ 40 nH) C = 3.0-35 pF Variable Capacitance (@ 10 pF) 15 , Copper wire (@ 40 nH) C = 3.0-35 pF Variable Capacitance (@ 10 pF) Note 1 Capacitor for tank may be , , C, is replaced with a varactor diode whose capacitance changes with the voltage applied, thus


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PDF MC100EL1648 K1648 SOEIAJ-14 KEL1648 506AA MC100EL1648 MC100EL1648/D SOEAIJ-14 MMBV609 purposes of varactor diode symbol of varactor diode and equivalent circuit Variable Capacitance Diodes K1648 D 3410 A enamelled copper wire tables EL14 KEL1648
2003 - KV1310NT

Abstract: KV1310
Text: Variable capacitance diode for FM tuning FM KV1310NT FEATURES Included Twin Element Very , 35.06 pF VR=4V, f=1MHz Diode Capacitance C6 19.24 25.46 pF VR=6V, f=1MHz 16.05 21.25 pF VR=8V, f=1MHz C8 RS 0.5 VR=2V, f=70MHz Series Resistance A 2.20 2.42 C2/C8 Capacitance Ratio * Capacitance measured in parallel connections. Back to Back Type2 * Diode Capactance measured with Agilent , Part name Package Marking Pin configulation 310 KV1310NT TO92-3 ORDERING INFORMATION


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PDF KV1310NT O92-3 70MHz 100MHz 50MHz KV1310NT KV1310
280175

Abstract: V900-V982 V920 V900 V900E V907 V910 V912 V915 V927
Text: ® VOLTAGE VARIABLE CAPACITANCE DIODES V900—V982 V900E—V982E • EPITAXIAL CONSTRUCTION â , -*-!_L Diode Type Capacitance (PO ±20% a -4VDC, 1mc Maximum Woiklno Voltage (MWV) Typical Capacitance , 25 3.0- 18.0 15 0.005 25 V910 10 25 4.3- 26,0 IS 0.00s 25 V912 12 25 5.2- 31.0 15 0.005 25 V915 15 , ,005 100 V912E 12 100 2.7- 31.0 7 0,005 100 V9l5r IS 100 3.3- 39.0 7 0.005 100 V920E 20 90 5.0- 50.0 , for ±10%, "B" lor ±5'/. "C" (or ±2% and "D" lor ±1% Capacitance Tolerances, j _•- J «S^TCI


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PDF T17tiQS V900Eâ V982E V910E V912E V920E V927E V933E V939E V947E 280175 V900-V982 V920 V900 V900E V907 V910 V912 V915 V927
2004 - kel16

Abstract: K1648 marking codes transistors soic-14 MC1648 internal schematic EL14 KEL1648 MC100EL1648 MC1648 t2022 varactor diode q factor measurement
Text: variable capacitance values. The 1.0 kW resistor in Figure 11 is used to protect the varactor diode during , #T20-22, 8 turns #30 Enameled Copper wire (@ 40 nH) C = 3.0-35pF Variable Capacitance (@ 10 pF) 0.01 , Enameled Copper wire (@ 40 nH) C = 3.0-35 pF Variable Capacitance (@ 10 pF) 15 * The 1200 W resistor , #30 Enameled Copper wire (@ 40 nH) C = 3.0-35 pF Variable Capacitance (@ 10 pF) 40 20 * The , 3.0-35 pF Variable Capacitance (@ 10 pF) Note 1 Capacitor for tank may be variable type. (See Tank


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PDF MC100EL1648 MC100EL1648 MC1648. MC100EL1648/D kel16 K1648 marking codes transistors soic-14 MC1648 internal schematic EL14 KEL1648 MC1648 t2022 varactor diode q factor measurement
1998 - SCR gate drive circuit

Abstract: DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 SCR Gate Drive for ac to dc converter GBAN-PVI-1
Text: ProCenter Fax-On-Demand ( 310 ) 252-7100 Revised Application Notes and Design Tips Title (and topic, if , Pay Attention to Circuit Layout Be Careful When Using the Integral Body-Drain Diode Be On Your Guard , /27/98 www.irf.com Paralleling HEXFETs IR ProCenter Fax-On-Demand ( 310 ) 252-7100 941 6 , Leakage Gate Threshold Gate Leakage Transconductance On-Resistance Diode Drop Characteristics in Synchronous Rectification Transfer Characteristics Measurements Without a Curve Tracer Device Capacitance


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PDF INT-936 May-97 Jun-97 AN-936) Jun-96 SCR gate drive circuit DT94-15 variable frequency drive circuit diagram dc-Motor controller 500w 600V igbt dc to dc buck converter IR2130 with ac voltage controller Drive circuit for IGBT using IR2130 dt94-9 SCR Gate Drive for ac to dc converter GBAN-PVI-1
TS19371

Abstract: TS1937 led driver ts19371 led driver 30v pwm sot26 pwm driver sot-26
Text: represents the conduction losses in the diode while the diode capacitance (CT or CD) represents the switching losses. For diode selection, both forward voltage drop and diode capacitance need to be , diode capacitance , which can cause significant switching losses at the 1.2MHz switching frequency of , the internal NPN power switch. Connect to 1 SW inductor and diode . Minimize the metal trace , resistance). Diode Selection Schottky diodes, with their low forward voltage drop and fast reverse


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PDF TS19371 OT-26 TS19371 TS1937 led driver ts19371 led driver 30v pwm sot26 pwm driver sot-26
1999 - DT94-15

Abstract: ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 HV Floating MOS-Gate Driver circuits GBAN-PVI-1 DT-93-4 AN-948
Text: ProCenter Fax-On-Demand ( 310 ) 252-7100 Revised Application Notes and Design Tips Title (and topic, if , to Circuit Layout Be Careful When Using the Integral Body-Drain Diode Be On Your Guard When Comparing , Sharing at Turn-On Dynamic Sharing at Turn-Off Related Topics IR ProCenter Fax-On-Demand ( 310 ) 252-7100 , Gate Leakage Transconductance On-Resistance Diode Drop Characteristics in Synchronous Rectification Transfer Characteristics Measurements Without a Curve Tracer Device Capacitance 's Switching Times Gate


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PDF INT-936 AN-936) INT-937 Jun-96 Oct-98 DT94-15 ir21xx SCR gate drive circuit 3 phase IGBT inverter design by ir2130 HEXFEt Power MOSFET Design Guide 3 phase dc control ir2130 HV Floating MOS-Gate Driver circuits GBAN-PVI-1 DT-93-4 AN-948
protek 506

Abstract: 4000 Count Digital Multimeter P-3502C c1600 pc based oscilloscope 741-0007 lcd for multimeters
Text: , Capacitance , cExcellent Load Regulation: 303 CV Mode — <0.01% +3 mV; 310 CV Mode — <0.04% +2 mV Inductance , , Capacitance , Frequency, Temperature, Duty Cycle/Pulse Width, Diode cLight Weight (7.5 oz.) Rugged Case with , .EACH 2393.08 3 3 /4 Digit 4000 Count Digital Multimeters Model 506 DMM 0-30 Volt Variable Power Supplies cLinear Technology Assures Low Noise for Powering RF Circuitry cModel 303 — 0-3 A; Model 310 — 0-10 A cRS , Voltage and Current. cLogic Function and Built In Sig. Generator cRipple <1 mV RMS 303 310 (CV) cDual


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PDF CM-109. protek 506 4000 Count Digital Multimeter P-3502C c1600 pc based oscilloscope 741-0007 lcd for multimeters
MA2X329

Abstract: MA329
Text: Variable Capacitance Diodes MA2X329 (MA329) Silicon epitaxial planar type Unit : mm For VHF , s Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Symbol , , f = 1 MHz 9.15 12.44 pF CD(17V) Diode capacitance deviation 25.87 VR = 25 V, f = , conventional part number. 287 MA2X329 Variable Capacitance Diodes CD VR 120 20 10 5 3 , ° 0.00±0.05 Parameter (0.3) 5° · Large capacitance ratio · Small series resistance rD · Mini


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PDF MA2X329 MA329) MA2X329 MA329
2001 - MA2X329

Abstract: MA329
Text: Variable Capacitance Diodes MA2X329 (MA329) Silicon epitaxial planar type Unit : mm For VHF , capacitance Capacitance ratio Diode capacitance deviation Series resistance* Min Typ VR = , the parenthesis shows conventional part number. 287 MA2X329 Variable Capacitance Diodes CD , = 25°C 50 Diode capacitance CD (pF) CD Ta IF V F 100 40 0.98 0 1 0 , n. · Large capacitance ratio · Small series resistance rD · Mini type package, allowing


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PDF MA2X329 MA329) MA2X329 MA329
2001 - MA2X329

Abstract: MA329
Text: Variable Capacitance Diodes MA2X329 (MA329) Silicon epitaxial planar type Unit : mm , Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Symbol IR Conditions Min , CD(17V) Diode capacitance deviation 25.87 VR = 25 V, f = 1 MHz CD(10V) Capacitance ratio , Variable Capacitance Diodes CD VR 120 20 10 5 3 1.02 VR = 3 V 1.01 10 V 17 V 25 , ) Diode capacitance CD (pF) 30 1.03 100 f = 1 MHz Ta = 25°C 50 40 0 4 0 8


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PDF MA2X329 MA329) MA2X329 MA329
2001 - Not Available

Abstract: No abstract text available
Text: Variable Capacitance Diodes MA2X329 (MA329) Silicon epitaxial planar type Unit : mm For VHF electronic tuners s Features · Large capacitance ratio · Small series resistance rD · Mini type package , °C Parameter Symbol IR Reverse current (DC) Diode capacitance Pl Capacitance ratio Diode capacitance , Variable Capacitance Diodes IF V F 1.03 CD Ta f = 1 MHz VR = 3 V 10 V 17 V 25 V 50 100 1.02 Diode capacitance CD (pF) 30 20 Forward current IF (mA) 10 60 25°C - 40


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PDF MA2X329 MA329)
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