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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

30mW transistor Datasheets Context Search

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2011 - GP 809 DIODE

Abstract:
Text: , Silicon MOSFET Power Transistor 527MHz,1W Zout* (f=890, 915, 941MHz) Zo=50ohm @Pin= 30mW , Vds=7.2V,Idq , Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically designed , , Silicon MOSFET Power Transistor 527MHz,1W ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED , threshold Voltage Output power Drain efficiency VGS=10V, VDS=0V VDS=7.2V, IDS=1mA VDD=7.2V, Pin= 30mW f , FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W TYPICAL


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PDF RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz Nov2011 GP 809 DIODE GP 839 DIODE 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode GP 007 DIODE mosfet vhf power amplifier diode gp 805
2011 - GP 809 DIODE

Abstract:
Text: Compliance, Silicon MOSFET Power Transistor 527MHz,1W Zout* (f=890, 915, 941MHz) Zo=50ohm @Pin= 30mW , Vds , Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically , FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W , =7.2V, Pin= 30mW 1.0 1.6 - W Drain efficiency f=527MHz , Idq= 40mA 60 70 - % , , Silicon MOSFET Power Transistor 527MHz,1W TYPICAL CHARACTERISTICS (These are only typical curves and


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PDF RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz GP 809 DIODE GP 007 DIODE
2006 - mosfet marking 12W

Abstract:
Text: wires). Thermal Design of the Heat Sink: At Pout=7W, VDD=12.5V and Pin= 30mW each stage transistor , =7W (VGG control), VDD=12.5V, Pin= 30mW · Broadband Frequency Range: 68-88MHz · Low-Power Control Current , MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout>7W @ VDD=12.5V, VGG=5V, Pin= 30mW 1 Drain , 13.2 V VGG Gate Voltage VDD<12.5V, Pin< 30mW 6 V Pin Input Power 50 mW , Output Power T 68 Total Efficiency nd Harmonic MIN 7 W 38 VDD=12.5V,VGG=5V, Pin= 30mW


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PDF RA07H0608M 68-88MHz RA07H0608M 88-MHz mosfet marking 12W 30mW transistor RA07H0608M-101 transistor marking code 12W
2006 - RA07M0608M-101

Abstract:
Text: wires). Thermal Design of the Heat Sink: At Pout=7W, VDD=7.2V and Pin= 30mW each stage transistor , =6W (VGG control), VDD=7.2V, Pin= 30mW · Broadband Frequency Range: 66-88MHz · Low-Power Control Current , MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V) · Pout>7W @ VDD=7.2V, VGG=5V, Pin= 30mW 1 Drain , 9.2 V VGG Gate Voltage VDD<7.2V, Pin< 30mW 5.5 V Pin Input Power 50 mW , Output Power T 66 Total Efficiency nd Harmonic MIN 7 W 45 VDD=7.2V,VGG=5V, Pin= 30mW


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PDF RA07M0608M 66-88MHz RA07M0608M 88-MHz RA07M0608M-101 Pin-30mW RA07M0608
2004 - RA07H0608M-01

Abstract:
Text: =12.5V, Pin= 30mW · Broadband Frequency Range: 68-88MHz · Low-Power Control Current IGG=1mA (typ) at VGG , (IDD0 @ VDD=12.5V, VGG=0V) · Pout>7W @ VDD=12.5V, VGG=5V, Pin= 30mW 1 Drain Voltage (VDD), Battery , Drain Voltage VGG<5V 13.2 V VGG Gate Voltage VDD<12.5V, Pin< 30mW 6 V Pin , nd Harmonic VDD=12.5V,VGG=5V, Pin= 30mW Pout=7W (VGG control), VDD=12.5V, Pin= 30mW in , control), Load VSWR=4:1 - Load VSWR Tolerance VDD=13.2V, Pin= 30mW , Pout=7W (VGG control), Load


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PDF RA07H0608M 68-88MHz RA07H0608M 88-MHz RA07H0608M-01
Not Available

Abstract:
Text: RF Input (Pin) RF Output (Pout) 5 • ηT>45% @ Pout=6W (VGG control), VDD=7.2V, Pin= 30mW â , ‰…0 @ VDD=7.2V, VGG=0V) • Pout>7W @ VDD=7.2V, VGG=5V, Pin= 30mW 2 3 RF Ground (Case) PACKAGE , VGG<5V 9.2 V VGG Gate Voltage VDD<7.2V, Pin< 30mW 5.5 V Pin Input Power , nd Harmonic VDD=7.2V,VGG=5V, Pin= 30mW Pout=6W (VGG control), VDD=7.2V, Pin= 30mW ρin , ), IDD<3A, Load VSWR=4:1 — Load VSWR Tolerance VDD=9.2V, Pin= 30mW , Pout=7W (VGG control


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PDF 66-88MHz RA07M0608M 88-MHz RA07M0608M
2010 - RA07H0608M-101

Abstract:
Text: RF Input (Pin) RF Output (Pout) 5 · T>38% @ Pout=7W (VGG control), VDD=12.5V, Pin= 30mW · , =0V) · Pout>7W @ VDD=12.5V, VGG=5V, Pin= 30mW 2 3 RF Ground (Case) PACKAGE CODE: H46S RoHS , <12.5V, Pin< 30mW Pin RATING Input Power Pout Tcase(OP) Tstg UNIT 16 V 50 , VDD=12.5V,VGG=5V, Pin= 30mW Pout=7W (VGG control), VDD=12.5V, Pin= 30mW in Input VSWR IGG , - Load VSWR Tolerance VDD=13.2V, Pin= 30mW , Pout=7W (VGG control), Load VSWR=20:1 No


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PDF RA07H0608M 07H0608 68-88MHz RA07H0608M 88-MHz RA07H0608M-101
2010 - RA07M0608M

Abstract:
Text: Heat Sink: At Pout=7W, VDD=7.2V and Pin= 30mW each stage transistor operating conditions are: Pin , RF Input (Pin) RF Output (Pout) 5 · T>45% @ Pout=6W (VGG control), VDD=7.2V, Pin= 30mW · , =0V) · Pout>7W @ VDD=7.2V, VGG=5V, Pin= 30mW 2 3 RF Ground (Case) PACKAGE CODE: H46S RoHS , 9.2 V VGG Gate Voltage VDD<7.2V, Pin< 30mW 5.5 V Pin Input Power 50 mW , =7.2V,VGG=5V, Pin= 30mW Pout=6W (VGG control), VDD=7.2V, Pin= 30mW in Input VSWR IGG Gate


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PDF RA07M0608M 07M0608 66-88MHz RA07M0608M 88-MHz RA07M0608M-101
2009 - RA07M0608M

Abstract:
Text: Heat Sink: At Pout=7W, VDD=7.2V and Pin= 30mW each stage transistor operating conditions are: Pin , =6W (VGG control), VDD=7.2V, Pin= 30mW · Broadband Frequency Range: 66-88MHz · Low-Power Control Current , MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V) · Pout>7W @ VDD=7.2V, VGG=5V, Pin= 30mW 1 Drain , 9.2 V VGG Gate Voltage VDD<7.2V, Pin< 30mW 5.5 V Pin Input Power 50 mW , Pout=6W (VGG control), VDD=7.2V, Pin= 30mW Gate Current - Stability VDD=6.0-9.2V, Pin


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PDF RA07M0608M 66-88MHz RA07M0608M 88-MHz RA07M0608M-101 RF MOSFET MODULE
2003 - hatfield attenuator

Abstract:
Text: =12.5V, Pin= 30mW Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) 5 · Pout>7W @ VDD=12.5V, VGG=5V, Pin= 30mW 2 4 · Enhancement-Mode MOSFET Transistors (IDD0 @ , Pout Output Power T TYP VDD=12.5V,VGG=5V, Pin= 30mW MAX UNIT 88 68 Total Efficiency nd MIN MHz 7 W 38 % Pout=7W (VGG control), VDD=12.5V, Pin= 30mW 2fo 2 , <8W (VGG control), Load VSWR=4:1 - Load VSWR Tolerance VDD=13.2V, Pin= 30mW , Pout=7W (VGG


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PDF RA07H0608M 68-88MHz RA07H0608M 88-MHz ava86-2-2833-9793 hatfield attenuator f88m metwn RA07H060 RA07H0608M-01 RA07H0608M-E01 RF MOSFET MODULE
Not Available

Abstract:
Text: =3.3V and Pin= 30mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T , =3.3V, VGG=2.0V, Pin= 30mW Gate Voltage (VGG), Power Control 3 FEATURES • Enhancement-Mode MOSFET , 2 Harmonic in CONDITIONS VDD=3.3V VGG=2.0V PiN= 30mW Input VSWR VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, — Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN= 30mW , Pout , 50 45 3 VDD=3.3V VGG=2.0V Pin= 30mW Pout 2 35 30 25 20 15 1 HARMONICS (dBc


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PDF RA01L8693MA 865-928MHz RA01L8693MA
2010 - MOSFET Power Amplifier Module 900Mhz

Abstract:
Text: =3.3V and Pin= 30mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T , =2.0V, Pin= 30mW Gate Voltage (VGG), Power Control 3 FEATURES · Enhancement-Mode MOSFET Transistors , in CONDITIONS VDD=3.3V VGG=2.0V PiN= 30mW Input VSWR VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, - Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN= 30mW , Pout =2W (VGG control), Zg , , TOTAL EFFICIENCY, versus FREQUENCY 5 2nd, 3 -30 50 45 3 VDD=3.3V VGG=2.0V Pin= 30mW


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PDF RA01L8693MA 865-928MHz RA01L8693MA MOSFET Power Amplifier Module 900Mhz GP20
Not Available

Abstract:
Text: RF Input (Pin) RF Output (Pout) 5 • ηT>38% @ Pout=7W (VGG control), VDD=12.5V, Pin= 30mW , (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>7W @ VDD=12.5V, VGG=5V, Pin= 30mW 2 3 RF Ground (Case , Drain Voltage VGG<5V VGG Gate Voltage VDD<12.5V, Pin< 30mW Pin RATING Input Power , ηT Total Efficiency 2fo 2 nd Harmonic VDD=12.5V,VGG=5V, Pin= 30mW Pout=7W (VGG control), VDD=12.5V, Pin= 30mW ρin Input VSWR IGG Gate Current — Stability VDD


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PDF 68-88MHz RA07H0608M 88-MHz RA07H0608M
2009 - RA07H0608

Abstract:
Text: Heat Sink: At Pout=7W, VDD=12.5V and Pin= 30mW each stage transistor operating conditions are: Pin , =7W (VGG control), VDD=12.5V, Pin= 30mW · Broadband Frequency Range: 68-88MHz · Low-Power Control Current , MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout>7W @ VDD=12.5V, VGG=5V, Pin= 30mW 1 Drain , Drain Voltage 16 VDD Drain Voltage Gate Voltage VDD<12.5V, Pin< 30mW Pin Input Power , Pout=7W (VGG control), VDD=12.5V, Pin= 30mW Gate Current - Stability VDD=7.2-13.2V, Pin


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PDF RA07H0608M 68-88MHz RA07H0608M 88-MHz RA07H0608 RA07H0608M-101 RF MOSFET MODULE
2010 - transistor 9527

Abstract:
Text: Pout=1.4W, VDD=3.3V and Pin= 30mW each stage transistor operating conditions are: Pin Pout Rth , Voltage (VDD), Battery 4 RF Output (Pout) 5 · Pout>1.4W, T>35% @ VDD=3.3V, VGG=2.0V, Pin= 30mW , =2.0V PiN= 30mW Input VSWR VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, - Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN= 30mW , Pout =2W (VGG control), Zg=50ohm, Load VSWR=20:1 Zg , =2.0V Pin= 30mW 3 Pout 2 35 30 25 20 15 1 -35 HARMONICS (dBc) 4 TOTAL EFFICIENCY


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PDF RA01L9595M 952-954MHz RA01L9595M transistor 9527 st 9535 T 9527 9542 mitsubishi data sheet transistor 9527
mosfet st 9544

Abstract:
Text: =3.3V and Pin= 30mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T , =2.0V, Pin= 30mW Gate Voltage (VGG), Power Control 3 FEATURES • Enhancement-Mode MOSFET , — Total Efficiency nd 2fo 2 Harmonic in VDD=3.3V VGG=2.0V PiN= 30mW , VDD=6.0V, PiN= 30mW , Pout =2W (VGG control), Zg=50ohm, Load VSWR=20:1 Zg=50ohm, — Po<2.5W , EFFICIENCY, versus FREQUENCY 5 -30 50 40 T VDD=3.3V VGG=2.0V Pin= 30mW 3 Pout 2 35


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PDF RA01L9595M 952-954MHz RA01L9595M mosfet st 9544
2009 - transistor 9527

Abstract:
Text: =3.3V and Pin= 30mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T , · Pout>1.4W, T>35% @ VDD=3.3V, VGG=2.0V, Pin= 30mW PACKAGE CODE: H58 · Frequency Range , Efficiency nd in Harmonic Pout(2) Output Power VDD=3.3V VGG=2.0V PiN= 30mW Input VSWR Total Efficiency -30 VDD=5.0V, VGG=2.0V ,PiN= 30mW VDD=5.0V PiN= 30mW ,POUT=2W (VGG control) VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN= 30mW


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PDF RA01L9595M 952-954MHz RA01L9595M transistor 9527 9544 transistor transistor 9529 transistor 1w 9533 RF MOSFET MODULE ra 9522 transistor RA Series rfid reader module circuit diagrams mosfet st 9544
2008 - ra01l8693ma

Abstract:
Text: required. Thermal Design of the Heat Sink: At Pout=1.4W, VDD=3.3V and Pin= 30mW each stage transistor , · Pout>1.4W, T>38% @ VDD=3.3V, VGG=2.0V, Pin= 30mW PACKAGE CODE: H58 · Broadband Frequency , =2.0V PiN= 30mW Total Efficiency VDD=5.0V,VGG=2.0V, PiN= 30mW VDD=5.0V PiN= 30mW ,POUT=2W (VGG control) VDD=2.5/3.3/6.0V, VGG=0.5-2.0V, Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN= 30mW , (witch makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto the


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PDF RA01L8693MA 865-928MHz RA01L8693MA RF MOSFET MODULE ra MITSUBISHI marking example
2010 - RA01L8693MA

Abstract:
Text: required. Thermal Design of the Heat Sink: At Pout=1.4W, VDD=3.3V and Pin= 30mW each stage transistor , =2.0V, Pin= 30mW Gate Voltage (VGG), Power Control 3 FEATURES · Enhancement-Mode MOSFET Transistors , =3.3V VGG=2.0V PiN= 30mW 2fo 2 -30 in Input VSWR - Stability PIN=20-50mW , Load VSWR Tolerance VDD=6.0V, PiN= 30mW , Pout =2W (VGG control), Zg=50ohm, Load VSWR=20:1 dBc 4.4 , the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto the substrate


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PDF RA01L8693MA 865-928MHz RA01L8693MA RF MOSFET MODULE
2006 - GP 839 DIODE

Abstract:
Text: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 , RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This , =1mA VDD=7.2V, Pin= 30mW f=520MHz,Idq=100mA MIN 1 0.8 50 LIMITS TYP 1.8 1.4 65 UNIT MAX , Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE , Transistor 520MHz,1W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS 80 Po


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PDF RD01MUS2 520MHz 520MHz RD01MUS2 GP 839 DIODE GP 809 DIODE GP 841 Diode MOS FET 1127 RD01MUS2-101 RF Transistor s-parameter vhf t06 TRANSISTOR transistor M 839 RD01MU
2003 - equivalent transistor c 243

Abstract:
Text: RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION 4.6MAX RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. 1.5 , =1mA VDD=7.2V, Pin= 30mW f=520MHz,Idq=100mA MIN 1 0.8 50 LIMITS TYP 1.8 1.4 65 UNIT MAX , Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE *1:The , ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor


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PDF RD01MUS1 520MHz RD01MUS1 520MHz 48MAX 53MAX equivalent transistor c 243
2004 - 1348 transistor

Abstract:
Text: PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. 4.4+/-0.1 TYPE , =12V, IDS=1mA VDD=7.2V, Pin= 30mW f=520MHz,Idq=100mA MIN 1 0.8 50 LIMITS TYP 1.8 1.4 65 , MOSFET Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE , ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor


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PDF RD01MUS1 520MHz RD01MUS1 520MHz 1348 transistor 2779, transistor RD01MSU1 fet 547
2002 - AP3705

Abstract:
Text: high average efficiency and ultra no-load consumption less than 30mW . The AP3705 is available in SOIC , Current and Constant Voltage Output 30mW No-load Input Power Feasible Secondary CV/CC Control Circuitry , through the VST pin and the external start-up NPN transistor after start-up to save power and obtain ultra low standby power 30mW or below. The start-up circuit is shown in Figure 8. The VST pin is in open , the base drive current of the NPN transistor Q2. And then VCC can get an amplified start-up current


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PDF AP3705 AP3705 OT-23-6 LM MARKING SOT-23-6 AP3705M-G1 3705M CV SOT23-6 D NC AUX FB VDD GND CS offline forward converter sot-23-6 led driver Marking Information
2006 - RD01MUS1-101

Abstract:
Text: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. 4.4+/-0.1 , =12V, IDS=1mA VDD=7.2V, Pin= 30mW f=520MHz,Idq=100mA MIN 1 0.8 50 LIMITS TYP 1.8 1.4 65 , , Silicon MOSFET Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT , Transistor 520MHz,1W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS Po Gp


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PDF RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 RD01MSU1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor
2002 - 3705M

Abstract:
Text: start-up NPN transistor after start-up to save power and obtain ultra low standby power 30mW or below , than 30mW . · · · · · · The AP3705 is available in SOIC-8 package. Primary Side Control for Rectangular Constant Current and Constant Voltage Output 30mW No-load Input Power Feasible , the NPN transistor Q2. And then VCC can get an amplified start-up current (hFE+1)*IST, where hFE is , removed. reverse-biased voltage will turn off the start-up NPN transistor and cut off the current


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PDF AP3705 AP3705 3705M 3705M-G1 AP3705M-G1 IC LM 324
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