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LT1034-1.2#TR Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other
LT1034-2.5#TR Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other
LT1009 Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other
LTC202 Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other
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30a snubber circuit Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - G2000VC450

Abstract: GTO thyristor THYRISTOR GTO Westcode thyristor datasheet FT40 westcode thyristor
Text: circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , fixed by the snubber circuit time constant, which must be allowed to fully discharge before the GTO , snubber circuit . Voltage will continue to rise across DUT until Dc turns-on at a voltage set by the , ITGQM Maximum peak turn-off current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2 , A/µs Notes: 1) VGK-2Volts. 2) Tj=125°C, VD=67%VDM, VDM 30A /µs, CS=4µF. 3


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PDF G2000VC450 G2000VC450 GTO thyristor THYRISTOR GTO Westcode thyristor datasheet FT40 westcode thyristor
2004 - G1500N

Abstract: No abstract text available
Text: over the normal operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , is employed then the equivalent CS , GTO at turn-on) the actual minimum on-time will usually be fixed by the snubber circuit time constant , across the DUT, dv/dt being limited by the snubber circuit . Voltage will continue to rise across DUT , Maximum controllable on-state current, (note 2) Snubber loop inductance, ITM=ITGQM, (note 2) Mean on-state


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PDF G1500NC250 500x10 G1500NC250 G1500N
2004 - G2000VC250

Abstract: GTO thyristor thyristor circuit diagram THYRISTOR GTO FT40 Gate Turn-off Thyristor
Text: curves are effective over the normal operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , is employed , snubber circuit time constant, which must be allowed to fully discharge before the GTO thyristor is , period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit . Voltage will , Cs DUT Vc Cd RCD snubber Diagram 10, Turn-off test circuit . The definitions of


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PDF Jul-04 G2000VC250 G2000VC250 GTO thyristor thyristor circuit diagram THYRISTOR GTO FT40 Gate Turn-off Thyristor
2003 - GTO thyristor 1200V 100A

Abstract: 10A fast Gate Turn-off Thyristor GTO thyristor 1200V 50A
Text: operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , is employed then the equivalent CS should be used and Ls , will usually be fixed by the snubber circuit time constant, which must be allowed to fully discharge , Gatedrive DUT RCD snubber Diagram 10, Turn-off test circuit . The definitions of turn-off parameters , W kW A V µs µs °C °C 2 Peak turn-off current, (note 2) Snubber loop inductance, ITM=ITGQ, (note


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PDF H0500KC25# GTO thyristor 1200V 100A 10A fast Gate Turn-off Thyristor GTO thyristor 1200V 50A
2004 - H0700KC

Abstract: GTO thyristor 1200V 50A 40A GTO thyristor Gate Turn-off Thyristor GTO thyristor Application notes thyristor 8010 gto Gate Drive circuit THYRISTOR GTO gto 20A FT40
Text: operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , is employed then the equivalent CS should be used and Ls , ) the actual minimum on-time will usually be fixed by the snubber circuit time constant, which must be , period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit . Voltage will , Cd RCD snubber Diagram 10, Turn-off test circuit . The definitions of turn-off parameters used


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PDF H0700KC17# H0700KC GTO thyristor 1200V 50A 40A GTO thyristor Gate Turn-off Thyristor GTO thyristor Application notes thyristor 8010 gto Gate Drive circuit THYRISTOR GTO gto 20A FT40
Not Available

Abstract: No abstract text available
Text: operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , is employed then the equivalent CS should be used and Ls , minimum on-time will usually be fixed by the snubber circuit time constant, which must be allowed to , across the DUT, dv/dt being limited by the snubber circuit . Voltage will continue to rise across DUT , snubber Diagram 10, Turn-off test circuit . The definitions of turn-off parameters used in the


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PDF H0700KC17#
2004 - Westcode Semiconductors

Abstract: H0500KC GTO thyristor 1200V 50A 40A GTO thyristor anode gate thyristor Gate Turn-off Thyristor GTO thyristor Application notes GTO thyristor 100A, 2000V GTO thyristor 10A TO 48 THYRISTOR FAST SWITCHING
Text: device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , minimum on-time will usually be fixed by the snubber circuit time constant, which must be allowed to , period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit . Voltage will , DUT RCD snubber Diagram 10, Turn-off test circuit . The definitions of turn-off parameters used , Maximum peak turn-off current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2) 0.3 µH


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PDF H0500KC25# Westcode Semiconductors H0500KC GTO thyristor 1200V 50A 40A GTO thyristor anode gate thyristor Gate Turn-off Thyristor GTO thyristor Application notes GTO thyristor 100A, 2000V GTO thyristor 10A TO 48 THYRISTOR FAST SWITCHING
Not Available

Abstract: No abstract text available
Text: circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , is , across the DUT, dv/dt being limited by the snubber circuit . Voltage will continue to rise across DUT , snubber Diagram 10, Turn-off test circuit . The definitions of turn-off parameters used in the , Maximum peak turn-off current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2) 0.3 , =50%VDRM, ITGQ=500A, IGM= 30A , diG/dt=15A/µs µs - 0.5 - VGT IGT td Gate trigger voltage


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PDF H0500KC25#
MKP-X2

Abstract: gas turbine ignition system WIMA MKS 3 PE 1000 MKP airbag control unit FKP1 MKS wima FKP2 MKP 10 wima fkp1
Text: Snubber Capacitors Variable terminations SnubberMKP/FKP W1UA MKP 0M7 2000-rao- GTO Capacitors , >300.000 h ■Highest du/dt Snubber 0.01 JUF-25/JF 250-4000VDC Variable contacts SHs- Em Snubber , >300.000 h ■High reliability against active or passive flammability (MP) Snubber Capacitors 0.01 /jF - 25/JF 250 - 4000 VDC Variable terminations H Snubber MKP/FKP Snubber MKP/FKP Snubber MKP/FKP â , Snubber Cap. O.OI/JF-25/JF 250-4000VDC Variable terminations WW* 10.047 I i Solito 2000-W? | Snubber MKP


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PDF 2000-TOO- 2000-rao- MKP-X2 gas turbine ignition system WIMA MKS 3 PE 1000 MKP airbag control unit FKP1 MKS wima FKP2 MKP 10 wima fkp1
2004 - GTO 100A IXYS

Abstract: GTO thyristor GTO thyristor 10A FT40 THYRISTOR GTO thyristor circuit diagram RCD snubber G3000 GTO 3000A 2500V LS anode gate thyristor
Text: snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland , fixed by the snubber circuit time constant, which must be allowed to fully discharge before the GTO , snubber circuit . Voltage will continue to rise across DUT until Dc turns-on at a voltage set by the , ITGQM Maximum peak turn-off current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2 , , re-applied voltage VD=VR10V. 5) IT=2000A repetitive, IGM= 30A , diGM/dt=40A/µs, for higher di/dt please


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PDF G3000TC250 G3000TC250 GTO 100A IXYS GTO thyristor GTO thyristor 10A FT40 THYRISTOR GTO thyristor circuit diagram RCD snubber G3000 GTO 3000A 2500V LS anode gate thyristor
2003 - GTO thyristor Application notes

Abstract: S0500KC25 s0500
Text: assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an , turn-on) the actual minimum on-time will usually be fixed by the snubber circuit time constant, which must , across the DUT, dv/dt being limited by the snubber circuit . Voltage will continue to rise across DUT , W kW A V µs µs °C °C 2 Peak turn-off current, (note 2) Snubber loop inductance, ITM=ITGQ, (note , which the gate circuit is required to remain low impedance to allow for the passage of tail current


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PDF S0500KC25# GTO thyristor Application notes S0500KC25 s0500
2004 - Not Available

Abstract: No abstract text available
Text: operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , is employed then the equivalent CS should be used and Ls , minimum on-time will usually be fixed by the snubber circuit time constant, which must be allowed to , across the DUT, dv/dt being limited by the snubber circuit . Voltage will continue to rise across DUT , snubber Diagram 10, Turn-off test circuit . The definitions of turn-off parameters used in the


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PDF S0500KC25#
2009 - SC454

Abstract: SC452 SC183 GPU board diagram SC440 SC189 SC560C SC441 SC416 Semtech SC414
Text: virtually eliminated Snubber SmartDriveTM Page 3 Semtech Confidential October, 2007 Semtech , thermal pad Page 5 Snubber SmartDriveTM Semtech Confidential October, 2007 IMVP6/6+ LV/ULV , # support · Use Rsense or DCR-sense · 32L MLP 5x5 · In Production Page 6 Snubber SmartDriveTM Semtech Confidential October, 2007 SC454 Application Schematic Snubber SmartDriveTM Page 7 , ­ Droop ­ Power Monitor Page 8 Snubber SmartDriveTM Semtech Confidential October, 2007


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PDF SC452 SC454 SC440 SC441 SC412A SC415 SC416 SC4211/5/6 SC338/9 SC560 SC454 SC452 SC183 GPU board diagram SC440 SC189 SC560C SC441 SC416 Semtech SC414
2003 - TO93 package

Abstract: RC snubber dc motor DK27 RC snubber ac motor 50A 1200V
Text: 30A /µs, Gate open circuit - 20 µs Typ. Max. Units VT(TO) t(ON)TOT *Typical , % VDRM Tj = 125oC, Gate open circuit - 200 V/µs Gate source 20V, 20 Repetitive 50Hz - , Total turn-on time Tj = 25°C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 30A /µs, dIG/dt = 1A/µs 3 , 10V. 3. R.C Snubber , C = 0.22µF, R = 4.7 Fig.7 Energy per pulse for sinusoidal pulses NOTES: 1. VD 600V. 2. VR 10V. 3. R.C Snubber , C = 0.22µF, R = 4.7 Fig.8 Maximum allowable peak on-state


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PDF DS4269-4 DS4269-5 20kHz TO93 package RC snubber dc motor DK27 RC snubber ac motor 50A 1200V
2003 - FAST SWITCHING THYRISTOR

Abstract: 12FAK DYNEX DK27
Text: , Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source , = 25°C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 30A /µs, dIG/dt = 1A/µs Tj = 25oC, ITM = 1A, VD = 12V Tj = 125°C, IT = 200A, VR = 50V, tq code: A dV/dt = 200V/µs (Linear to 60% VDRM), dIR/dt = 30A /µs, Gate open circuit Repetitive 50Hz Non-repetitive Min. 1.5* 3* Max. 1.85 25 200 500 800 1.2 1.0 70 20 , www.dynexsemi.com DK27.FA NOTES: 1. VD 600V. 2. VR 10V. 3. R.C Snubber , C = 0.22µF, R = 4.7 Fig


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PDF DS4269-4 DS4269-5 20kHz FAST SWITCHING THYRISTOR 12FAK DYNEX DK27
2011 - N1467NS

Abstract: N1467NS260
Text: 25°C. 4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory , local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated


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PDF N1467NS200 N1467NS260 N1467NS260 N1467NS
N1802NC120-160

Abstract: No abstract text available
Text: Repetitive dv/dt Standard dv/dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6.0 , snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below


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PDF N1802NC120 N1802NC160 N1802NC160 N1802NC120-160
1995 - Not Available

Abstract: No abstract text available
Text: % VDRM), dIR/dt = 30A /µs, Gate open circuit - 20 µs VT(TO) t(ON)TOT *Typical value , Linear to 60% VDRM Tj = 125oC, Gate open circuit - 200 V/µs Gate source 20V, 20â , µs Total turn-on time Tj = 25˚C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 30A /µs, dIG/dt = 1A , ‰¤ 600V. 2. VR ≤ 10V. 3. R.C Snubber , C = 0.22µF, R = 4.7Ω NOTES: 1. VD ≤ 600V. 2. VR ≤ 10V. 3. R.C Snubber , C = 0.22µF, R = 4.7Ω 6/12 DK27.FA NOTES: 1. VD ≤ 600V. 2. VR â


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PDF DS4269-2 20kHz. 12FAK.
Not Available

Abstract: No abstract text available
Text: Standard dv/dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber , snubber discharge current. If required, please consult the factory for assistance. 6.0 Rate of rise of , current apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at


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PDF N1297NC200 N1297NC260 N1297NC260
Not Available

Abstract: No abstract text available
Text: Standard dv/dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber , snubber discharge current. If required, please consult the factory for assistance. 6.0 Rate of rise of , current apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at


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PDF N1449QL200 N1449QL220 NX306QL200-220 N1449QL220
N1114LC120

Abstract: No abstract text available
Text: /dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber , apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least


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PDF N1114LC120 N1114LC180 N1114LC180
Not Available

Abstract: No abstract text available
Text: 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current , device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V is assumed


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PDF N1547NC160 N1547NC200 N1547NC200
A0516YC280

Abstract: No abstract text available
Text: 25°C. 4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory , local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated


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PDF A0516YC200 A0516YC280 AX195YC280 A0516YC200- A0516YC280
Not Available

Abstract: No abstract text available
Text: /dt 5.0 Snubber Components   Standard dv/dt is 1000V/µs. When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6.0 , snubber network.   7.0 Gate Drive The nominal requirement for a typical gate drive is


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PDF A1237NC200 A1237NC280 AX146NC280 note595 A1237NC200- A1237NC280
Not Available

Abstract: No abstract text available
Text: 25° C C. 4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the , that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive


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PDF N1042LC120 N1042LC180 N1042LC180.
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