2004  G2000VC450
Abstract: GTO thyristor THYRISTOR GTO Westcode thyristor datasheet FT40 westcode thyristor
Text: circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , fixed by the snubber circuit time constant, which must be allowed to fully discharge before the GTO , snubber circuit . Voltage will continue to rise across DUT until Dc turnson at a voltage set by the , ITGQM Maximum peak turnoff current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2 , A/µs Notes: 1) VGK2Volts. 2) Tj=125°C, VD=67%VDM, VDM 30A /µs, CS=4µF. 3

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G2000VC450
G2000VC450
GTO thyristor
THYRISTOR GTO
Westcode thyristor datasheet
FT40
westcode thyristor

2004  G1500N
Abstract: No abstract text available
Text: over the normal operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , is employed then the equivalent CS , GTO at turnon) the actual minimum ontime will usually be fixed by the snubber circuit time constant , across the DUT, dv/dt being limited by the snubber circuit . Voltage will continue to rise across DUT , Maximum controllable onstate current, (note 2) Snubber loop inductance, ITM=ITGQM, (note 2) Mean onstate

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G1500NC250
500x10
G1500NC250
G1500N

2004  G2000VC250
Abstract: GTO thyristor thyristor circuit diagram THYRISTOR GTO FT40 Gate Turnoff Thyristor
Text: curves are effective over the normal operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , is employed , snubber circuit time constant, which must be allowed to fully discharge before the GTO thyristor is , period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit . Voltage will , Cs DUT Vc Cd RCD snubber Diagram 10, Turnoff test circuit . The definitions of

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Jul04
G2000VC250
G2000VC250
GTO thyristor
thyristor circuit diagram
THYRISTOR GTO
FT40
Gate Turnoff Thyristor

2003  GTO thyristor 1200V 100A
Abstract: 10A fast Gate Turnoff Thyristor GTO thyristor 1200V 50A
Text: operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , is employed then the equivalent CS should be used and Ls , will usually be fixed by the snubber circuit time constant, which must be allowed to fully discharge , Gatedrive DUT RCD snubber Diagram 10, Turnoff test circuit . The definitions of turnoff parameters , W kW A V µs µs °C °C 2 Peak turnoff current, (note 2) Snubber loop inductance, ITM=ITGQ, (note

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H0500KC25#
GTO thyristor 1200V 100A
10A fast Gate Turnoff Thyristor
GTO thyristor 1200V 50A

2004  H0700KC
Abstract: GTO thyristor 1200V 50A 40A GTO thyristor Gate Turnoff Thyristor GTO thyristor Application notes thyristor 8010 gto Gate Drive circuit THYRISTOR GTO gto 20A FT40
Text: operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , is employed then the equivalent CS should be used and Ls , ) the actual minimum ontime will usually be fixed by the snubber circuit time constant, which must be , period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit . Voltage will , Cd RCD snubber Diagram 10, Turnoff test circuit . The definitions of turnoff parameters used

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H0700KC17#
H0700KC
GTO thyristor 1200V 50A
40A GTO thyristor
Gate Turnoff Thyristor
GTO thyristor Application notes
thyristor 8010
gto Gate Drive circuit
THYRISTOR GTO
gto 20A
FT40

Not Available
Abstract: No abstract text available
Text: operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , is employed then the equivalent CS should be used and Ls , minimum ontime will usually be fixed by the snubber circuit time constant, which must be allowed to , across the DUT, dv/dt being limited by the snubber circuit . Voltage will continue to rise across DUT , snubber Diagram 10, Turnoff test circuit . The definitions of turnoff parameters used in the

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H0700KC17#

2004  Westcode Semiconductors
Abstract: H0500KC GTO thyristor 1200V 50A 40A GTO thyristor anode gate thyristor Gate Turnoff Thyristor GTO thyristor Application notes GTO thyristor 100A, 2000V GTO thyristor 10A TO 48 THYRISTOR FAST SWITCHING
Text: device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , minimum ontime will usually be fixed by the snubber circuit time constant, which must be allowed to , period tgt voltage rises across the DUT, dv/dt being limited by the snubber circuit . Voltage will , DUT RCD snubber Diagram 10, Turnoff test circuit . The definitions of turnoff parameters used , Maximum peak turnoff current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2) 0.3 µH

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H0500KC25#
Westcode Semiconductors
H0500KC
GTO thyristor 1200V 50A
40A GTO thyristor
anode gate thyristor
Gate Turnoff Thyristor
GTO thyristor Application notes
GTO thyristor 100A, 2000V
GTO thyristor 10A
TO 48 THYRISTOR FAST SWITCHING

Not Available
Abstract: No abstract text available
Text: circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , is , across the DUT, dv/dt being limited by the snubber circuit . Voltage will continue to rise across DUT , snubber Diagram 10, Turnoff test circuit . The definitions of turnoff parameters used in the , Maximum peak turnoff current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2) 0.3 , =50%VDRM, ITGQ=500A, IGM= 30A , diG/dt=15A/Âµs Âµs  0.5  VGT IGT td Gate trigger voltage

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H0500KC25#

MKPX2
Abstract: gas turbine ignition system WIMA MKS 3 PE 1000 MKP airbag control unit FKP1 MKS wima FKP2 MKP 10 wima fkp1
Text: Snubber Capacitors Variable terminations SnubberMKP/FKP W1UA MKP 0M7 2000rao GTO Capacitors , >300.000 h â Highest du/dt Snubber 0.01 JUF25/JF 2504000VDC Variable contacts SHs Em Snubber , >300.000 h â High reliability against active or passive flammability (MP) Snubber Capacitors 0.01 /jF  25/JF 250  4000 VDC Variable terminations H Snubber MKP/FKP Snubber MKP/FKP Snubber MKP/FKP â , Snubber Cap. O.OI/JF25/JF 2504000VDC Variable terminations WW* 10.047 I i Solito 2000W?  Snubber MKP

OCR Scan

PDF

2000TOO
2000rao
MKPX2
gas turbine ignition system
WIMA MKS 3
PE 1000 MKP
airbag control unit
FKP1
MKS wima
FKP2
MKP 10
wima fkp1

2004  GTO 100A IXYS
Abstract: GTO thyristor GTO thyristor 10A FT40 THYRISTOR GTO thyristor circuit diagram RCD snubber G3000 GTO 3000A 2500V LS anode gate thyristor
Text: snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland , fixed by the snubber circuit time constant, which must be allowed to fully discharge before the GTO , snubber circuit . Voltage will continue to rise across DUT until Dc turnson at a voltage set by the , ITGQM Maximum peak turnoff current, (note 2) Ls Snubber loop inductance, ITM=ITGQM, (note 2 , , reapplied voltage VD=VR10V. 5) IT=2000A repetitive, IGM= 30A , diGM/dt=40A/µs, for higher di/dt please

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G3000TC250
G3000TC250
GTO 100A IXYS
GTO thyristor
GTO thyristor 10A
FT40
THYRISTOR GTO
thyristor circuit diagram
RCD snubber
G3000
GTO 3000A 2500V LS
anode gate thyristor

2003  GTO thyristor Application notes
Abstract: S0500KC25 s0500
Text: assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an , turnon) the actual minimum ontime will usually be fixed by the snubber circuit time constant, which must , across the DUT, dv/dt being limited by the snubber circuit . Voltage will continue to rise across DUT , W kW A V µs µs °C °C 2 Peak turnoff current, (note 2) Snubber loop inductance, ITM=ITGQ, (note , which the gate circuit is required to remain low impedance to allow for the passage of tail current

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S0500KC25#
GTO thyristor Application notes
S0500KC25
s0500

2004  Not Available
Abstract: No abstract text available
Text: operating range of the device and assume a snubber circuit equivalent to that given in diagram 2. If a more complex snubber , such as an Underland circuit , is employed then the equivalent CS should be used and Ls , minimum ontime will usually be fixed by the snubber circuit time constant, which must be allowed to , across the DUT, dv/dt being limited by the snubber circuit . Voltage will continue to rise across DUT , snubber Diagram 10, Turnoff test circuit . The definitions of turnoff parameters used in the

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S0500KC25#

2009  SC454
Abstract: SC452 SC183 GPU board diagram SC440 SC189 SC560C SC441 SC416 Semtech SC414
Text: virtually eliminated Snubber SmartDriveTM Page 3 Semtech Confidential October, 2007 Semtech , thermal pad Page 5 Snubber SmartDriveTM Semtech Confidential October, 2007 IMVP6/6+ LV/ULV , # support · Use Rsense or DCRsense · 32L MLP 5x5 · In Production Page 6 Snubber SmartDriveTM Semtech Confidential October, 2007 SC454 Application Schematic Snubber SmartDriveTM Page 7 , Droop Power Monitor Page 8 Snubber SmartDriveTM Semtech Confidential October, 2007

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SC452
SC454
SC440
SC441
SC412A
SC415
SC416
SC4211/5/6
SC338/9
SC560
SC454
SC452
SC183
GPU board diagram
SC440
SC189
SC560C
SC441
SC416
Semtech SC414

2003  TO93 package
Abstract: RC snubber dc motor DK27 RC snubber ac motor 50A 1200V
Text: 30A /µs, Gate open circuit  20 µs Typ. Max. Units VT(TO) t(ON)TOT *Typical , % VDRM Tj = 125oC, Gate open circuit  200 V/µs Gate source 20V, 20 Repetitive 50Hz  , Total turnon time Tj = 25°C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 30A /µs, dIG/dt = 1A/µs 3 , 10V. 3. R.C Snubber , C = 0.22µF, R = 4.7 Fig.7 Energy per pulse for sinusoidal pulses NOTES: 1. VD 600V. 2. VR 10V. 3. R.C Snubber , C = 0.22µF, R = 4.7 Fig.8 Maximum allowable peak onstate

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DS42694
DS42695
20kHz
TO93 package
RC snubber dc motor
DK27
RC snubber ac motor
50A 1200V


2003  FAST SWITCHING THYRISTOR
Abstract: 12FAK DYNEX DK27
Text: , Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source , = 25°C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 30A /µs, dIG/dt = 1A/µs Tj = 25oC, ITM = 1A, VD = 12V Tj = 125°C, IT = 200A, VR = 50V, tq code: A dV/dt = 200V/µs (Linear to 60% VDRM), dIR/dt = 30A /µs, Gate open circuit Repetitive 50Hz Nonrepetitive Min. 1.5* 3* Max. 1.85 25 200 500 800 1.2 1.0 70 20 , www.dynexsemi.com DK27.FA NOTES: 1. VD 600V. 2. VR 10V. 3. R.C Snubber , C = 0.22µF, R = 4.7 Fig

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DS42694
DS42695
20kHz
FAST SWITCHING THYRISTOR
12FAK
DYNEX
DK27

2011  N1467NS
Abstract: N1467NS260
Text: 25Â°C. 4.0 Repetitive dv/dt Standard dv/dt is 1000V/Âµs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory , local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated

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N1467NS200
N1467NS260
N1467NS260
N1467NS

N1802NC120160
Abstract: No abstract text available
Text: Repetitive dv/dt Standard dv/dt is 1000V/Âµs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6.0 , snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below

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N1802NC120
N1802NC160
N1802NC160
N1802NC120160

1995  Not Available
Abstract: No abstract text available
Text: % VDRM), dIR/dt = 30A /Âµs, Gate open circuit  20 Âµs VT(TO) t(ON)TOT *Typical value , Linear to 60% VDRM Tj = 125oC, Gate open circuit  200 V/Âµs Gate source 20V, 20â , Âµs Total turnon time Tj = 25ËC, IT = 50A, VD = 300V, IG = 1A, dI/dt = 30A /Âµs, dIG/dt = 1A , ¤ 600V. 2. VR â¤ 10V. 3. R.C Snubber , C = 0.22ÂµF, R = 4.7â¦ NOTES: 1. VD â¤ 600V. 2. VR â¤ 10V. 3. R.C Snubber , C = 0.22ÂµF, R = 4.7â¦ 6/12 DK27.FA NOTES: 1. VD â¤ 600V. 2. VR â

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DS42692
20kHz.
12FAK.

Not Available
Abstract: No abstract text available
Text: Standard dv/dt is 1000V/Âµs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber , snubber discharge current. If required, please consult the factory for assistance. 6.0 Rate of rise of , current apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at

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N1297NC200
N1297NC260
N1297NC260

Not Available
Abstract: No abstract text available
Text: Standard dv/dt is 1000V/Âµs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber , snubber discharge current. If required, please consult the factory for assistance. 6.0 Rate of rise of , current apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at

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N1449QL200
N1449QL220
NX306QL200220
N1449QL220

N1114LC120
Abstract: No abstract text available
Text: /dt is 1000V/Âµs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber , apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

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N1114LC120
N1114LC180
N1114LC180

Not Available
Abstract: No abstract text available
Text: 1000V/Âµs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current , device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V is assumed

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N1547NC160
N1547NC200
N1547NC200

A0516YC280
Abstract: No abstract text available
Text: 25Â°C. 4.0 Repetitive dv/dt Standard dv/dt is 1000V/Âµs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory , local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated

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A0516YC200
A0516YC280
AX195YC280
A0516YC200
A0516YC280

Not Available
Abstract: No abstract text available
Text: /dt 5.0 Snubber Components Standard dv/dt is 1000V/Âµs. When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6.0 , snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is

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A1237NC200
A1237NC280
AX146NC280
note595
A1237NC200
A1237NC280

Not Available
Abstract: No abstract text available
Text: 25Â° C C. 4.0 Repetitive dv/dt Standard dv/dt is 1000V/Âµs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the , that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive

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N1042LC120
N1042LC180
N1042LC180.
