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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
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LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
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300V 10A diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - L500H

Abstract: No abstract text available
Text: to 0 10 s Tj = 150°C VCC = 300V VP = 600V RG = 22 Inverter Diode Irr Diode Peak Rev. Recovery Current 23 A Tj = 125°C VCC = 300V IF = 10A L = 500H VGE = 15V RG = 22 V FM Diode Forward Voltage Drop 1.23 , 0 1000 1500 2000 dif/dt (A/µs) Fig. 15- Typical Diode IRR vs. diF/dt VCC= 300V ; VGE= 15V; ICE= 10A , (25°C-125°C) VGE = 0 VCE = 600V VGE = 0 VCE = 600V Tj = 125°C VGE = ±20V IC = 10A VCC = 300V VGE = 15V IC = 10A VCC = 300V VGE = 15V RG = 22 L = 500H Tj = 25°C 1 V(BR)CES/TJ Temp. Coefficient of


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PDF I27308 GB10RF60K E78996 12-Mar-07 L500H
2007 - Not Available

Abstract: No abstract text available
Text: ) 1200 Fig. 34- Typical Diode IRR vs. diF/dt VCC= 300V ; VGE= 15V; ICE= 10A ; TJ = 125°C Document , °C VCC = 300V VP = 600V RG = 22 Inverter Diode Irr Diode Peak Rev. Recovery Current 36 A Tj = 125°C VCC = 300V IF = 20A L = 200H VGE = 15V RG = 22 V FM Diode Forward Voltage Drop 1.26 1.38 1.21 1.36 1.57 1.80 , 0 10 s Tj = 150°C VCC = 300V VP = 600V RG = 22 Brake Diode V FM Diode Forward Voltage Drop NTC R B , °C VGE = ±20V IC = 10A VCC = 300V VGE = 15V IC = 10A VCC = 300V VGE = 15V RG = 22 L = 500H Tj = 25°C 1


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PDF I27307 GB20RF60K E78996 12-Mar-07
2007 - Not Available

Abstract: No abstract text available
Text: - Typical Diode IRR vs. diF/dt VCC= 300V ; VGE= 15V; ICE= 10A ; TJ = 125°C 0 www.vishay.com 10 Brake , 0 10 s Tj = 150°C VCC = 300V VP = 600V RG = 22 Inverter Diode Irr Diode Peak Rev. Recovery Current 30 A Tj = 125°C VCC = 300V IF = 15A L = 200H VGE = 15V RG = 22 V FM Diode Forward Voltage Drop 1.22 , 0 10 s Tj = 150°C VCC = 300V VP = 600V RG = 22 Brake Diode V FM Diode Forward Voltage Drop NTC R B , °C VGE = ±20V IC = 10A VCC = 300V VGE = 15V IC = 10A VCC = 300V VGE = 15V RG = 22 L = 500H Tj = 25°C 1


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PDF I27306 GB15RF60K E78996 12-Mar-07
1999 - igbt 300V 10A datasheet

Abstract: SMC7G10US60 MJ 800
Text: on delay time VCC= 300V , IC= 10A - 10 tr Turn on rise time VGE=15V - 17 - , IF= 10A Min Min Typ Max Irr Qrr Diode Reverse Recovery Charge 1.8 - Tc , Tc=100°C Recovery Current - Tc=100°C Diode Peak Reverse 2.8 Tc=25°C IF= 10A VR , Conditions VFM Diode Forward Voltage IF= 10A Min Min Typ Max VR=VRRM 1.2 1.5 - 1.1 , Transient Thermal Impedance, Junction to Case 1200 18 Vcc = 300V Ic = 10A 16 1000 800 12


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PDF SMC7G10US60 21-PM-AA igbt 300V 10A datasheet SMC7G10US60 MJ 800
1999 - Not Available

Abstract: No abstract text available
Text: - pF td(on) Turn on delay time VCC= 300V , IC= 10A - 10 tr Turn on rise time , Characteristics Conditions VFM Diode Forward Voltage IF= 10A Min Min Typ Max Irr Qrr Diode , =100°C Diode Peak Reverse 2.8 Tc=25°C IF= 10A VR=200V di/dt= -20A/uS 1.9 Tc=25 °C Diode , Impedance, Junction to Case 1200 18 Vcc = 300V Ic = 10A 16 1000 800 12 Cies VGE [V , MODULE 1.0 Vcc = 300V Ic = 10A 700 Vcc = 300V Rg =20Ω Vge = 15V Esw Ic =20A 0.8


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PDF SMC7G10US60 21-PM-AA 20oduct
igbt 300V 10A datasheet

Abstract: SMC6G10US60 diode code GW 17
Text: capacitance Cres Reverse transfer capacitance td(on) Turn on delay time VCC= 300V , IC= 10A - , Inverter Part Symbol Characteristics Conditions VFM Diode Forward Voltage IF= 10A Trr Irr Diode Reverse Recovery Time IF= 10A VR=200V di/dt= -20A/uS Diode Peak Reverse , Diode @ Converter Part Symbol Characteristics Conditions VFM Diode Forward Voltage IF= 10A , 18 Vcc = 300V Ic = 10A 16 1000 800 12 Cies VGE [V] Capacitance [pF] 14 600


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PDF SMC6G10US60 21-PM-AA igbt 300V 10A datasheet SMC6G10US60 diode code GW 17
1999 - SME6G10US60 IGBT

Abstract: igbt 300V 10A datasheet SME6G10US60
Text: VCC = 300V , IC = 10A - 10 - ns tr Turn on rise time VGE = 15V - 17 - , Max Units Diode Forward Voltage IF= 10A Tc =25°C - 1.9 2.8 Tc =100°C VFM - , 40 78 Recovery Charge Qrr IF= 10A , VR=200V Recovery Current Irr Diode Reverse , , Junction to Case 1200 18 Vcc = 300V Ic = 10A 16 1000 800 12 Cies VGE [V , MODULE 1.0 Vcc = 300V Ic = 10A 700 Vcc = 300V Rg =20 Vge = 15V Esw Ic =20A 0.8


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PDF SME6G10US60 17-PM-BA SME6G10US60 IGBT igbt 300V 10A datasheet SME6G10US60
1999 - SGL10N60RUFD

Abstract: No abstract text available
Text: delay time VCC = 300V , IC = 10A - 10 - nS tr Turn on rise time VGE = 15V - , Transient Thermal Impedance, Junction to Case 1200 18 Vcc = 300V Ic = 10A 16 1000 800 12 , SGL10N60RUFD 1.0 Vcc = 300V Ic = 10A 700 Vcc = 300V Rg =20 Vge = 15V Esw Ic =20A 0.8 600 , Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic= 10A * High Input Impedance , 100°C 10 A ICM (1) Pulsed Collector Current 30 A IF Diode Continuous Forward


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PDF SGL10N60RUFD O-264 SGL10N60RUFD
1999 - SGS10N60RUFD

Abstract: 200v dc motor igbt
Text: delay time VCC = 300V , IC = 10A - 15 - ns tr Turn on rise time VGE = 15V - , = 300V Ic = 10A 16 1000 800 12 Cies VGE [V] Capacitance [pF] 14 600 400 , Emitter Voltage 40 CO-PAK IGBT SGS10N60RUFD 1.0 Vcc = 300V Ic = 10A 700 Vcc = 300V Rg , Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V @ IC= 10A * High Input Impedance * CO-PAK , 100°C 10 A ICM (1) Pulsed Collector Current 30 A IF Diode Continuous Forward


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PDF SGS10N60RUFD O-220F SGS10N60RUFD 200v dc motor igbt
1999 - SGH10N60RUFD

Abstract: No abstract text available
Text: delay time VCC = 300V , IC = 10A - 10 - ns tr Turn on rise time VGE = 15V - , Transient Thermal Impedance, Junction to Case 1200 18 Vcc = 300V Ic = 10A 16 1000 800 12 , SGH10N60RUFD 1.0 Vcc = 300V Ic = 10A 700 Vcc = 300V Rg =20 Vge = 15V Esw Ic =20A 0.8 600 , Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V @ IC= 10A * High Input Impedance , 100°C 10 A ICM (1) Pulsed Collector Current 30 A IF Diode Continuous Forward


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PDF SGH10N60RUFD SGH10N60RUFD
2008 - Not Available

Abstract: No abstract text available
Text: Energy (includes reverse recovery of diode ) Iout = 10A , VDC = 300V TvJ = 25°C TvJ = 150°C Eon , side VLIN,HIN = 0V; Iout = 10A , VDC = 300V td(on) - 639 - Turn-on rise time High side or low side VLIN,HIN = 5V Iout = 10A , VDC = 300V tr - 34 - Turn-off propagation delay High side or low side VLIN,HIN = 5V; Iout = 10A , VDC = 300V td(off) - 854 - Turn-off fall time High side or low side VLIN,HIN = 0V Iout = 10A , VDC = 300V tf - 40 -


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PDF IKCS17F60B2A IKCS17F60B2C
2014 - Not Available

Abstract: No abstract text available
Text: to 300V - 115 - Turn - on delay time td(on) *3 VDD = 300V , ID = 10A - 22 - , Turn - off switching loss Eon *3 Eoff *3 S pF pF ns VDD = 300V , ID= 10A VGS = 18V , gate charge Qg *3 VDD = 300V - 61 - Gate - Source charge Qgs *3 ID = 10A - , (plateau) VDD = 300V , ID = 10A - 10.4 - nC V *1 For Tj=175°C and thermal dissiparion , - Source Voltage : VGS [V] tf 100 td(on) tr 10 Ta = 25ºC VDD = 300V ID = 10A Pulsed


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PDF S2206 120mW R1102B
Not Available

Abstract: No abstract text available
Text: =0.25A I F=1A VR=30V di/dt=100A/μs I F= 10A VR= 300V di/dt=200A/μs I F= 10A VR= 300V di/dt=200A/μs I F= 10A VR= 300V di/dt=200A/μs QRT2003ADC PARAMETER Breakdown voltage per diode , VR=240V Reverse recovery time per diode - 0.04 - μA VR= 300V Reverse current , average forward rectified current per device per diode I F(AV) 20 10 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode I FSM 120 A


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PDF QRT2003DC 2002/95/EC MIL-S-19500/228 O-263/D2PAK 2012-REV
2012 - Not Available

Abstract: No abstract text available
Text: Breakdown voltage per diode SYMBOL VBR TEST CONDITIONS I R=0.5mA I F=1A I F=5A I F= 10A I F=1A I F=5A I F= 10A VR=240V Reverse current per diode IR VR= 300V I F=0.5A I R=1A I RR=0.25A I F=1A VR=30V di/dt=100A/s I F= 10A VR= 300V di/dt=200A/s I F= 10A VR= 300V di/dt=200A/s I F= 10A VR= 300V di/dt=200A/s TJ=25oC TJ , QRT2003ADC PARAMETER Breakdown voltage per diode SYMBOL VBR TEST CONDITIONS I R=0.5mA I F=1A I F=5A I F= 10A I F=1A I F=5A I F= 10A VR=280V Reverse current per diode IR VR=350V I F=0.5A I R=1A I RR=0.25A I F


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PDF QRT2003DC MIL-S-19500/228 2002/95/EC O-263/D2PAK MIL-STD-750, 2012-REV
2008 - cge6

Abstract: cge5
Text: Iout = 10A , VDC = 300V TvJ = 25° C TvJ = 150° C Iout = 10A , VDC = 300V TvJ = 25° C TvJ = 150° C Iout = 10A , VDC = 300V TvJ = 25° C TvJ = 150° C VLIN,HIN = 0V; Iout = 10A , VDC = 300V VLIN,HIN = 5V Iout = 10A , VDC = 300V VLIN,HIN = 5V; Iout = 10A , VDC = 300V VLIN,HIN = 0V Iout = 10A , VDC = 300V VITRIP = 1V , times as a function of junction temperature (inductive load, VCE = 300V , VDD = 15V, IC = 10A Dynamic , as a function of junction temperature (inductive load, VCE = 300V , VDD = 15V, IC = 10A Dynamic test


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PDF IKCS17F60B2A IKCS17F60B2C IKCS17F60B2A cge6 cge5
2014 - Not Available

Abstract: No abstract text available
Text: pF ns VDD = 300V , ID= 10A VGS = 18V/0V RG = 0Ω, L=500µH *Eon includes diode reverse , VDD = 300V , ID = 10A - 22 - VGS = 18V/0V - 31 - td(off) *3 RL = 30W - , - 21 - Gate plateau voltage V(plateau) VDD = 300V , ID = 10A - 10.4 - nC , ] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Ta = 25ºC VDD = 300V ID = 10A Pulsed 9/13 , Resistance Switching Energy : E [µJ] 200 Ta = 25ºC VDD= 300V ID= 10A VGS = 18V/0V L=500µH 150


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PDF SCT2120AF 120mW O220AB R1102B
2008 - IKCS17F60F2C

Abstract: No abstract text available
Text: (includes reverse recovery of diode ) IGBT Turn-off Energy Iout = 10A , VDC = 300V TvJ = 25° C TvJ = 150° C Iout = 10A , VDC = 300V TvJ = 25° C TvJ = 150° C Iout = 10A , VDC = 300V TvJ = 25° C TvJ = 150° C VLIN,HIN = 0V; Iout = 10A , VDC = 300V VLIN,HIN = 5V Iout = 10A , VDC = 300V VLIN,HIN = 5V; Iout = 10A , VDC = 300V VLIN,HIN = 0V Iout = 10A , VDC = 300V VITRIP = 1V, Iu, Iv, Iw = 10A VITRIP = 1V VITRIP = 1V VLIN,HIN , junction temperature (inductive load, VCE = 300V , VDD = 15V, IC = 10A Dynamic test circuit in Figure A


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PDF IKCS17F60F2A IKCS17F60F2C IKCS17F60F2A IKCS17F60F2C
2009 - schematic diagram washing machines

Abstract: igbt 300V 10A datasheet IKCS17F60B2A IKCS17F60B2C igbt full h bridge 25A
Text: reverse recovery of diode ) Iout = 10A , VDC = 300V TvJ = 25°C TvJ = 150°C Eon IGBT Turn-off , = 10A , VDC = 300V td(on) - 639 - Turn-on rise time High side or low side VLIN,HIN = 5V Iout = 10A , VDC = 300V tr - 34 - Turn-off propagation delay High side or low side VLIN,HIN = 5V; Iout = 10A , VDC = 300V td(off) - 854 - Turn-off fall time High side or low side VLIN,HIN = 0V Iout = 10A , VDC = 300V tf - 40 - Shutdown propagation


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PDF IKCS17F60B2A IKCS17F60B2C schematic diagram washing machines igbt 300V 10A datasheet IKCS17F60B2A IKCS17F60B2C igbt full h bridge 25A
2009 - IKCS17F60F2C

Abstract: IKCS17F60F2A igbt 300V 10A datasheet
Text: 46 115 - IGBT Turn-on Energy (includes reverse recovery of diode ) Iout = 10A , VDC = 300V , 150°C Eoff Iout = 10A , VDC = 300V TvJ = 25°C TvJ = 150°C Erec Diode recovery Energy , Short circuit collector current1 VDD = 15V, tSC 5µs VCC = 300V , Tj = 150°C IC(SC) 2 Diode , = 10A , VDC = 300V td(on) - 639 - Turn-on rise time High side or low side VLIN,HIN = 5V Iout = 10A , VDC = 300V tr - 34 - Turn-off propagation delay High side or low


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PDF IKCS17F60F2A IKCS17F60F2C BeschaffenheitsgarantieCS17F60F2C IKCS17F60F2C IKCS17F60F2A igbt 300V 10A datasheet
IKCS17F60F2C

Abstract: IKCS17F60F2A
Text: IGBT Turn-on Energy (includes reverse recovery of diode ) Iout = 10A , VDC = 300V TvJ = 25°C TvJ = , = 150°C Eoff - 200 270 - Diode recovery Energy Iout = 10A , VDC = 300V TvJ = 25 , = +/- 10A TvJ = 25°C TvJ = 150°C Diode forward voltage VIN = 5V, Iout = +/- 10A TvJ = 25 , 10A , VDC = 300V td(on) - 639 - Turn-on rise time High side or low side VLIN,HIN = 5V Iout = 10A , VDC = 300V tr - 34 - Turn-off propagation delay High side or low side


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PDF IKCS17F60F2A IKCS17F60F2C IKCS17F60F2C IKCS17F60F2A
1998 - Not Available

Abstract: No abstract text available
Text: VGE=0V VCE=10V f=1MHz VCC= 300V IC= 10A VGE=±15V RG=220ohm IF= 10A , VGE=0V IF= 10A , -di/dt=30A/µs, VGE , Switching time vs. RG Vcc= 300V , Ic= 10A , VGE=±15V, Tj=25°C 5000 5000 Switching time vs. RG Vcc= 300V , Ic= 10A , Vcc= 300V , Ic= 10A , VGE=±15V, Tj=125°C 1.0 0.8 0.6 0.4 0.2 0.0 0 200 400 600 800 1000 1200 Gate , 6MBI10GS-060 600V / 10A 6 in one-package IGBT Modules Features · Compact Single in -line , Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage


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PDF 6MBI10GS-060
2012 - RR2p-Ul

Abstract: RR2P-U ac240v RR2P-U Idec rr2ba-u rectification failure relay 5V 1A DPDT RELAY SR2P-05C RR3B-UL DC24V relay 240v 10a circuits Y778
Text: , fingersafe M3 screw with captive wire clamp M3 screw with captive wire clamp Solder Solder Solder 300V , 10A 300V , 10A 300V , 10A 300V , 10A 300V , 10A 300V , 10A 300V , 15A ( 10A )* (*CSA rating) 300V , 10A 300V , 10A 300V , 10A Electrical Rating Wire Size Maximum 2 - #12 AWG Maximum 2 - #12 AWG Maximum 2 - #12 AWG , Relays & Sockets RR Series Power Relays Key features: · SPDT through 3PDT, 10A contacts · Midget , Res. Load 10A 7.5A 10A Ind. Load 7.5A 5A 5A Voltage 240V AC 120V AC 30V DC Resistive 10A 10A 10A


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PDF
EVG 12

Abstract: No abstract text available
Text: capacitance II II V cc= 300V , lc= 10A V ge=15V Rg=20 - 80 220 0.5 - ns ns ns mJ mJ mJ uS Q , Gate-Collector Charge Vcc= 300V V ge=15V lc= 10A - 44 10 15 66 15 22 nC nC nC T O IR O M I UP , Diode Reverse Recovery Time If= 10A VR=200V di/dt= -20A/uS Tc=25"C Tc=100"C Tc=25"C Tc=100 "C Tc , fm Characteristics Diode Forward Voltage Conditions |F= 10A Tc=25°C T c ^ io o r; Min Typ , ) = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VC C = 300V , VG E =15V, T c


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PDF SMC7G10US60 21-PM-AA EVG 12
Not Available

Abstract: No abstract text available
Text: Loss Short Circuit withstand Time V ce=30V w II VCC= 300V , lc= 10A V ge=15V Rg=20 Q Inductive , Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Vcc= 300V V ge=15V lc= 10A - 44 10 15 , Characteristics Diode Forward Voltage Conditions |F= 10A Tc=25"C Tc=100"C Min - Typ 1.9 1.8 Max 2.8 - Unit V - Trr Diode Reverse Recovery Time If= 10A VR=200V di/dt= -20A/uS Tc , ) = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VC C = 300V , VG E =15V, Tc


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PDF SMC6G10US60 10CfC 21-PM-AA
IKCS17F60B2A

Abstract: IKCS17F60B2C
Text: IGBT Turn-on Energy (includes reverse recovery of diode ) Iout = 10A , VDC = 300V TvJ = 25°C TvJ = , = 150°C Eoff - 200 270 - Diode recovery Energy Iout = 10A , VDC = 300V TvJ = 25 , = +/- 10A TvJ = 25°C TvJ = 150°C Diode forward voltage VIN = 5V, Iout = +/- 10A TvJ = 25 , 10A , VDC = 300V td(on) - 639 - Turn-on rise time High side or low side VLIN,HIN = 5V Iout = 10A , VDC = 300V tr - 34 - Turn-off propagation delay High side or low side


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PDF IKCS17F60B2A IKCS17F60B2C IKCS17F60B2A IKCS17F60B2C
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