The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
STELLARIS-3P-EXPLO-THREADX-RTOS Texas Instruments ThreadX V5.0
STELLARIS-3P-MICDI-SMXFFS-FS Texas Instruments smxFFS
STELLARIS-3P-GUANG-SMARTPRO-PGRT Texas Instruments SmartPRO (English)
STELLARIS-3P-QNLPS-RTXC-QPCPLUS Texas Instruments Quantum Leaps QPC Plus
STELLARIS-3P-HCC-EUSBOTG-STACK Texas Instruments Embedded USB OTG
STELLARIS-3P-PORTG-CANOPEN-PGRT Texas Instruments CANopen Library for Luminary Controllers

300OC/W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - OC-106 94V0 C

Abstract: olin 7025 Tamac4 CDA 194 eftec 7025 alloy lead frame sn 8400 Au Sn eutectic thermal conductivity Eftec 64t
Text: 11.7 E2 = 0.1 5.7 255 Tensile Strength MPa 157 627 19.98 W /mK 18 17.5 , 560 Thermal Conductivity (20oC) W /mK 160 15.7 17.5 190 263 166 300 , Conductivity W /mK 270 Coefficient of Thermal Expansion ppm/oC 8 Electrical Resistivity , Conductivity W /mK 0.2 0.1 - 0.2 390 390 0.52 Coefficient of Thermal Expansion ppm/oC


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PDF CH05WIP 300oC OC-106 94V0 C olin 7025 Tamac4 CDA 194 eftec 7025 alloy lead frame sn 8400 Au Sn eutectic thermal conductivity Eftec 64t
1999 - g20K

Abstract: thermistor glass
Text: No file text available


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PDF 300oC -80oC 300oC. 524mm Platinum/10% 225oC 150oC) G10K3A3 G20K3A3 g20K thermistor glass
1999 - THERMISTORS SCK 016

Abstract: Betatherm Betatherm 5K thermistor 102 thermistor copier thermistor 10k G10K G100K6A2 G100K6A3 G500K6A3
Text: No file text available


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PDF 300oC -80oC 300oC. Platinum/10% 200oC. DO-35 25/85oC 5K3600DP3 10K3700DP3 10K3970DP3 THERMISTORS SCK 016 Betatherm Betatherm 5K thermistor 102 thermistor copier thermistor 10k G10K G100K6A2 G100K6A3 G500K6A3
1998 - LH0002

Abstract: LH0002CH LH0002H Calogic LH0002C DIP-10 LH0002CN LH0002 equivalent N10A calogic CA-125C
Text: . . . . . . . . . . . . . . 125oC/ W JC, H Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 15oC/ W JA, N Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 120oC/ W ELECTRICAL


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PDF LH0002 LH0002 50MHz 400mA DS046 LH0002CH LH0002H Calogic LH0002C DIP-10 LH0002CN LH0002 equivalent N10A calogic CA-125C
1998 - LH0002

Abstract: 2n2905 configuration dip10 package LH0002CN resistor 2n2905 2N2905 equivalent LH0002C LH0002CH LH0002H N10A
Text: Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 125oC/ W JC, H Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 15oC/ W JA, N Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 120oC/ W ELECTRICAL CHARACTERISTICS (Note 1) SYMBOL PARAMETER MIN TYP MAX


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PDF LH0002 LH0002 50MHz 400mA 2N2905 2n2905 configuration dip10 package LH0002CN resistor 2n2905 2N2905 equivalent LH0002C LH0002CH LH0002H N10A
2002 - Not Available

Abstract: No abstract text available
Text: 4937G Units 400 600 Volts 280 420 Volts 400 600 Volts pF o C/ W o


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PDF 1N4933G 1N4937G MIL-S-19500 300oC/10 DO-204AL DO-41) 125oC 4937G
2002 - 1n914

Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 1N914(A)(B) )HDWXUHV · · · 0D[LPXP5DWLQJV · · · 500mW 100 Volt Silicon Epitaxial Diodes Low Current Leakage Compression Bond Construction Low Cost DO-35 O O Operating Temperature: -55 C to +150 C Storage Temperature: -55OC to +150 OC Maximum Thermal Resistance; 300OC/ W Junction To Ambient Electrical Characteristics @ 25OC Unless Otherwise Specified Maximum Repetitive Reverse Voltage Average


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PDF 1N914 500mW DO-35 -55OC 300OC/W 1N914
2002 - 1N914

Abstract: 1n914 equivalent 1N914A 1N914B
Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 1N914(A)(B) )HDWXUHV · · · 0D[LPXP5DWLQJV · · · 500mW 100 Volt Silicon Epitaxial Diodes Low Current Leakage Compression Bond Construction Low Cost DO-35 O O Operating Temperature: -55 C to +150 C Storage Temperature: -55OC to +150 OC Maximum Thermal Resistance; 300OC/ W Junction To Ambient Electrical Characteristics @ 25OC Unless Otherwise Specified Maximum Repetitive


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PDF 1N914 500mW DO-35 -55OC 300OC/W 1N914 1n914 equivalent 1N914A 1N914B
2006 - glass passivated fast recovery

Abstract: 4935G 1N4933G 1N4933SG 1N4937G 1N4937SG A-405 DO-204AL 4936g
Text: from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted 83 pF o C/ W


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PDF 1N4933G 1N4937G MIL-S-19500 300oC/10 DO-204AL DO-41 /A-405, 125oC glass passivated fast recovery 4935G 1N4933SG 1N4937G 1N4937SG A-405 4936g
PGC2007

Abstract: flame detector burner BURNER furnace DETECTOR FLAME EC DIESEL Instrument air gas analytical
Text: ) 95% relative humidity, non-condensing 708 mm W x 340 mm D x 1175 mm H (27.9 in. W x 13.4 in. D x , : Temperature Stability: Steady Ambient: Ambient Range: Stainless Steel 390 mm W x 520 mm H x 230 mm D (15.3 in. W x 20.4 in. H x 9.0 in. D) 1 external liquid sample valve Packed Forced Air Closed loop , ceramic core, all enclosed in a flameproof housing 305 mm W x 153 mm H x 102 mm D (12 in. W x 6 in. H x


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PDF PGC2007 1000o BUASC1A-12-0609 flame detector burner BURNER furnace DETECTOR FLAME EC DIESEL Instrument air gas analytical
2000 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 300oC)
2005 - Not Available

Abstract: No abstract text available
Text: 450 222 -65 to + 125 0.50 0.55 0.70 C/ W O C Electrical Characteristics Maximum Forward , 1.0 10 100 REVERSE VOLTAGE. (V) FIG.5- TYPICAL SAFE OPERATING AREA 150 R( )JA=300OC / W Note 1 10.0


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PDF SD1002 SD1006 OD-123 OD-123, MIIL-STD-202, 300OC
2005 - Not Available

Abstract: No abstract text available
Text: .45 oC/ W Thermal Resistance, Junction to Ambient, QJA: 3-Pin TO-39 Can .150 oC/ W Recommended Operating Conditions Supply Voltage Range (VIN


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PDF MX581S /883B MX581T /883B Mil-Std-1835 300oC -65oC 150oC Mil-Std-883:
1997 - harris 6508

Abstract: HM-6508
Text: A1 3 14 W A2 4 13 A9 A3 5 12 A8 A4 6 11 A7 Q 7 10 A6 GND 8 9 A5 PIN DESCRIPTION A Address Input E Chip Enable W Write Enable D Data Input , 5 W A 5 A LATCHED ADDRESS REGISTER E A0 A1 A2 A3 A4 NOTES: 1. All lines , (Typical, Note 1) JA JC CERDIP Package . . . . . . . . . . . . . . . . 75oC/ W 15oC/ W Maximum Storage , ) TEHEL (15) TELEH TEHEL (7) (6) E HIGH W D TEHOZ TELOV TELOX (3) (5


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PDF HM-6508/883 MIL-STD-883 HM-6508/883 20mW/MHz 180ns 100kHz 300oC harris 6508 HM-6508
2002 - 1N914

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N914(A)(B) )HDWXUHV · · · Low Current Leakage Compression Bond Construction Low Cost 500mW 100 Volt Silicon Epitaxial Diodes DO-35 O 0D[LPXP5DWLQJV · · · Operating Temperature: -55 C to +150 C Storage Temperature: -55OC to +150 OC Maximum Thermal Resistance; 300OC/ W Junction To Ambient O Electrical Characteristics @ 25OC Unless Otherwise Specified Maximum Repetitive Reverse


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PDF 1N914 500mW DO-35 -55OC 300OC/W 200mA 150OC
2005 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 260oC 300oC
2010 - Not Available

Abstract: No abstract text available
Text: Resistance Junction to Ambient (Rthja) 256oC/ W SOT-23-5L/TSOT-23-5L SOT-89 300oC/ W ESOP-8 150oC/ W J-lead 2021-8 300oC/ W Pin Configuration SOT-89 ESOP-8 (*Adj/Fixed) SOT


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PDF APU8850-HF-3 150mA OT-89, TSOT-23-5 OT-23-5 APU8850 APU8850MP 8850MP-XX
1N914

Abstract: No abstract text available
Text: Storage Temperature: -55OC to +150 OC Maximum Thermal Resistance; 300OC/ W Junction To Ambient


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PDF 1N914 DO-35 500mA 10K/Box, 100K/Ctn 10K/Reel, 50K/Ctn; 1N914 J-STD-020C
DO-204AL

Abstract: No abstract text available
Text: uA nS pF +/ W + + RATINGS AND CHARACTERISTIC CURVES (UG1A THRU UG1D) FIG.1- REVERSE RECOVERY


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PDF DO-204AL DO-41) MILSTD-750, 300oC/10 34gram 50mVp-p 50Vdc DO-204AL
2002 - 1n914 equivalent

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N914(A)(B) )HDWXUHV · · · · 0D[LPXP5DWLQJV · · · 500mW 100 Volt Silicon Epitaxial Diodes Low Current Leakage Compression Bond Construction Low Cost Marking : Cathode band and type number DO-35 O O Operating Temperature: -55 C to +150 C Storage Temperature: -55OC to +150 OC Maximum Thermal Resistance; 300OC/ W Junction To Ambient Electrical


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PDF 1N914 500mW DO-35 -55OC 300OC/W 1n914 equivalent
1N914

Abstract: 1N914B
Text: to +150 C Storage Temperature: -55OC to +150 OC Maximum Thermal Resistance; 300OC/ W Junction To


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PDF 1N914B DO-35 500mA 10K/Box, 100K/Ctn 10K/Reel, 50K/Ctn; 1N914 J-STD-020C 1N914B
2002 - AN-7505

Abstract: AN75 circuit diagram of thyristor controlled rectifier SCHEMATIC WITH IGBTS MOS-Gated Thyristor semiconductor power devices
Text: . DiGeronimo, G. Looney, P. Robinson, W . Romito, L. Skurkey, M. Snowden, R. Stolzenberger, and the staff of , . [6] H. W . Becke and C. F. Wheatley, "Power MOSFET With An Anode Region", U. S. Patent 4,364,073


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PDF AN-7505 AN-7505 AN75 circuit diagram of thyristor controlled rectifier SCHEMATIC WITH IGBTS MOS-Gated Thyristor semiconductor power devices
1999 - AN8603

Abstract: MOS-Gated Thyristor
Text: indebted to D. Bergman, R. Ford, F. DiGeronimo, G. Looney, P. Robinson, W . Romito, L. Skurkey, M. Snowden , ., 1982, pp 264-267. [6] H. W . Becke and C. F. Wheatley, "Power MOSFET With An Anode Region", U. S


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PDF AN8603 MOS-Gated Thyristor
1999 - Diode C 30 PH

Abstract: MSC1046 TD3162
Text: No file text available


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PDF TD3162 300ms, 300oC MSC1046 Diode C 30 PH TD3162
2002 - 1N914

Abstract: 1N914/TB13A
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N914(A)(B) )HDWXUHV · · · 0D[LPXP5DWLQJV · · · 500mW 100 Volt Silicon Epitaxial Diodes Low Current Leakage Compression Bond Construction Low Cost DO-35 O O Operating Temperature: -55 C to +150 C Storage Temperature: -55OC to +150 OC Maximum Thermal Resistance; 300OC/ W Junction To Ambient Electrical Characteristics @ 25OC Unless Otherwise Specified Maximum Repetitive Reverse Voltage Average


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PDF 1N914 500mW DO-35 -55OC 300OC/W 1N914 1N914/TB13A
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