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2005 - TTL nand gate

Abstract: ttl FULL ADDER smd cross reference 5962R9665104VXC 26CT32 CD40106BKMSR 5962R9572201QQC HS1-201HSRH-Q 5962R9572701VXC IS2-1009RH-Q
Text: SBDIP 28 Ld Flatpack 28 Ld Flatpack 28 Ld SBDIP 300krad 300krad 300krad 300krad 10krad 10krad 300krad 300krad 300krad 300krad 10krad Data Acquisition Switches Dual, DPST, TTL Dual, DPST, TTL Dual, DPST , Flatpack 100krad 100krad 100krad 100krad 300krad 300krad 300krad 300krad Data Bus Line Drivers Quad , SBDIP 16 Ld Flatpack 300krad 300krad 300krad 300krad 300krad 300krad 100krad 300krad 300krad 100krad 300krad 300krad 100krad 300krad 19-6 1-888-INTERSIL or 1-888-468-3774 | www.intersil.com


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PDF MIL-PRF-38535 IS9-1825ASRH-Q IS9-1845ASRH-8 IS9-1845ASRH-Q IS9-2100ARH-8 IS9-2100ARH-Q IS9-705RH-8 IS9-705RH-Q ISL7124SRHQF ISL7124SRHVF TTL nand gate ttl FULL ADDER smd cross reference 5962R9665104VXC 26CT32 CD40106BKMSR 5962R9572201QQC HS1-201HSRH-Q 5962R9572701VXC IS2-1009RH-Q
2006 - 5962F0052301VXC

Abstract: 5962R9578701VXC HI-0546 5962F9666301QXC 5962R9665101VXC CD4015BD 5962F9568902VXC 5962F9956002VXC 5962F0052301VYC 5962F9562601VYC
Text: 16 Ld SBDIP 300krad Single, 8-Channel, with OV Protection HS1-508BRH-Q 5962F9674202VEC 16 Ld SBDIP 300krad Single, 8-Channel, with OV Protection HS9-508BRH-8 5962F9674202QXC 16 Ld Flatpack 300krad Single, 8-Channel, with OV Protection HS9-508BRH-Q 5962F9674202VXC 16 Ld Flatpack 300krad Single, 8-Channel, with OV Protect, RON Match HS1B , -1840ARH-8 5962F9563002QXC 28 Ld SBDIP 300krad Single, 16-Channel, with OV Prot, Power-off Hi-Z HS1


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PDF MIL-PRF-38535 IS9-1845ASRH-8 5962F0150901QXC IS9-1845ASRH-Q 5962F0150901VXC IS9-2100ARH-8 5962F9953602QXC IS9-2100ARH-Q 5962F9953602VXC IS9-705RH-8 5962F0052301VXC 5962R9578701VXC HI-0546 5962F9666301QXC 5962R9665101VXC CD4015BD 5962F9568902VXC 5962F9956002VXC 5962F0052301VYC 5962F9562601VYC
2006 - 5962R9665101VXC

Abstract: 5962F9568902VXC 5962F0151001VXC 5962F9568901VXC 5962F9666302VXC 5962R9563701VXC 5962F9954701VXC 5962R9853301VXC HS9-26CT32RH-Q 5962F9956002VXC
Text: SBDIP 300krad Single, 8-Channel, with OV Protection HS1-508BRH-Q 5962F9674202VEC 16 Ld SBDIP 300krad Single, 8-Channel, with OV Protection HS9-508BRH-8 5962F9674202QXC 16 Ld Flatpack 300krad Single, 8-Channel, with OV Protection HS9-508BRH-Q 5962F9674202VXC 16 Ld Flatpack 300krad Single, 8-Channel, with OV Protect, RON Match HS1B-0548RH-Q 5962D9569401VEC , -1840ARH-8 5962F9563002QXC 28 Ld SBDIP 300krad Single, 16-Channel, with OV Prot, Power-off Hi-Z HS1


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PDF BR-558 5962R9665101VXC 5962F9568902VXC 5962F0151001VXC 5962F9568901VXC 5962F9666302VXC 5962R9563701VXC 5962F9954701VXC 5962R9853301VXC HS9-26CT32RH-Q 5962F9956002VXC
2003 - cd4xxx

Abstract: CD40107BKMSR CD4046BD 5962R9581301VXC 5962R9662501VEC 5962r9568101vcc 5962R9664401VXC 5962R9574401VXC 5962F9961801VXC 5962F9568902VXC
Text: -Lead SBDIP 300krad Data Converters Single, 8-Channel, with OV Protection HS1-508BRH-Q 5962F9674202VEC 16-Lead SBDIP 300krad Single, 8-Channel, with OV Protection HS1 , -508BRH-8 5962F9674202QXC 16-Lead Flatpack 300krad Single, 8-Channel, with OV Protection HS9-508BRH-Q 5962F9674202VXC 16-Lead Flatpack 300krad Single, 8-Channel, with OV Protection HS9 , -1840ARH-8 5962F9563002QXC 28-Lead SBDIP 300krad Single, 16-Channel, with OV Prot, Power-off Hi-Z HS1


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PDF 5962F9954701VYA IS1-1825ASRH-8 5962F0251101QEC IS1-1825ASRH-Q 5962F0251101VEC IS1-2981RH-8 5962R0052001QVC IS1-2981RH-Q 5962R0052001VVC IS2-1009RH-8 cd4xxx CD40107BKMSR CD4046BD 5962R9581301VXC 5962R9662501VEC 5962r9568101vcc 5962R9664401VXC 5962R9574401VXC 5962F9961801VXC 5962F9568902VXC
2009 - 5962F9568902VXC

Abstract: HS0-4080ARH-Q is9 1825asrh-q 5962F0052301VYC CD40106BKMSR 0546r 5962F9954701VXC 5962F0150901VXC HS 3282 CD4063
Text: ) 300krad 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection HS1-1840ARH-8 5962F9563002QXC 28 Ld SBDIP 300krad 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection HS1-1840ARH-Q 5962F9563002VXC 28 Ld SBDIP 300krad 16 Channel CMOS Analog , 300krad 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection HS9-1840ARH-Q 5962F9563002VYC 28 Ld FlatPack 300krad 8 Channel CMOS Analog Multiplexer with Overvoltage Protection


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PDF MIL-PRF-38535 RS-232) IS9-1845ASRH-8 5962F0150901QXC IS9-1845ASRH-Q 5962F0150901VXC IS9-2100ARH-8 5962F9953602QXC IS9-2100ARH-Q 5962F9953602VXC 5962F9568902VXC HS0-4080ARH-Q is9 1825asrh-q 5962F0052301VYC CD40106BKMSR 0546r 5962F9954701VXC 5962F0150901VXC HS 3282 CD4063
2008 - IS9-2100ARH-8

Abstract: 26clv32 5962F9954701VYC 5962F9568902VXC 5962R9666501VEC ld smd transistor 5962F9954701VXC 5962R9575101VRC 5962F9674202V9A 5962F9666302VXC
Text: ) 300krad 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection HS1-1840ARH-8 5962F9563002QXC 28 Ld SBDIP 300krad 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection HS1-1840ARH-Q 5962F9563002VXC 28 Ld SBDIP 300krad 16 Channel CMOS Analog , 300krad 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection HS9-1840ARH-Q 5962F9563002VYC 28 Ld FlatPack 300krad 8 Channel CMOS Analog Multiplexer with Overvoltage Protection


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PDF MIL-PRF-38535 RS-232) IS9-1845ASRH-8 5962F0150901QXC IS9-1845ASRH-Q 5962F0150901VXC IS9-2100ARH-8 5962F9953602QXC IS9-2100ARH-Q 5962F9953602VXC IS9-2100ARH-8 26clv32 5962F9954701VYC 5962F9568902VXC 5962R9666501VEC ld smd transistor 5962F9954701VXC 5962R9575101VRC 5962F9674202V9A 5962F9666302VXC
DC-DC Converter Burr-Brown

Abstract: fpga radiation COTS MIL-PRF-123 MIL-PRF-55365 POWER 12v 28V 3A 60W DC-DC "fairchild semiconductor" MIL-PRF-19500 dc converter MIL-PRF-19500 dc converter MIL-PRF "capacitor" film
Text: ), (5A), Rad-Hard to 300Krad+ 5 Pin MO-078 8605R Pos., Linear, 5A, Fixed w/Remote Sense VLDO= 0.300V (3A), 0.400V (5A) Rad-Hard to 300Krad+ 5- Pin MO-078, 8-Pin SMT 117 Pos. Linear, Adj., 1.25A, Vin= 40V Rad-Hard to 300Krad D2 127 Rad-Hard to 300 Krad Dual, 1A, Pos , Point-of-Load Switching Regulators · Output Currents of 1A, 3A, 4.5A, 15A · Rad-Tolerant to 300Krad TID , TID > 300Krad ; SET= 85 MeV Buffrered Inputs +28V +5V VL D 1 S 2 D 8 5


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PDF MIL-PRF-38534 DC-DC Converter Burr-Brown fpga radiation COTS MIL-PRF-123 MIL-PRF-55365 POWER 12v 28V 3A 60W DC-DC "fairchild semiconductor" MIL-PRF-19500 dc converter MIL-PRF-19500 dc converter MIL-PRF "capacitor" film
vcsel spice model

Abstract: magnetic stripe data conversion ir sensor interface with 8051 laser diode spice modeling micron fuse resistors "x-ray detector" VCSEL photodiode L035 interfacing 8051 with magnetic stripe readers metal detector plans
Text: CRHTM version shows little change in leakage after 300krad (Si) total ionizing dose 1.00E-10 , low leakage at 300krad (Si) Leakage (A) 1.00E-06 1.00E-07 L=0.35 L=0.75 L=5.00 1.00E-08 , 4.70E-01 Vtsat (V) Aeroflex CRHTM technology exhibits no discernable Vtsat shift even after 300krad , Ionizing Dose: ­ No Idoff leakage increase with total ionizing dose up to 300krad (Si) ­ No Vtsat shift with total ionizing dose up to 300krad (Si) ­ No appreciable change in subthreshold swing as a


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PDF
2013 - Not Available

Abstract: No abstract text available
Text: -139ASRH and IS-139ASEH are wafer-by-wafer assurance tested per MIL-STD-883H at 300krad (Si) of HDR (50 to 300 , . . . . . . 300krad (Si) • MIL-STD-883H Method 1019.8 (Ionizing Radiation (Total Dose) Test , and parametric yields. For comparison, a set of production results for the 300krad (Si) HDR assurance , 100krad 150krad 300krad T F P T F P T F P T F P LDR Biased , , as were all the HDR 300krad (Si) parts. The parametric yield results are in Table 2 and show 100


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PDF IS-139ASEH IS-139ASEH 50krad IS-139ASRH 150krad AN1821
2005 - NSL 32 equivalent

Abstract: HX6408
Text: Time (1) (2) (3) Typical (2) 300KRad 1MRad 300KRad 1MRad Worst Case (3) -55 to 125°C Min Max 20 25 ns 20 25 3 300KRad 1MRad 20 25 4 8 25 5 10 5 0 5 ns ns ns , Write Disable to Write Enable Pulse Width (5) (1) (2) (3) (4) (5) Typical (2) 300KRad 1MRad 300KRad 1MRad 300KRad 1MRad 300KRad 1MRad 300KRad 1MRad 20 25 15 20 16 20 12 15 20 25


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PDF HX6408 NSL 32 equivalent HX6408
2002 - ISL7124

Abstract: smd transistor equivalent table
Text: dose hardened to 300krad (Si) and offers guaranteed performance over the full -55C to +125C military , 5962-02542 · Radiation Environment - Total Dose. . . . . . . . . . . . . . . . . . . . . . 300krad (Si)(Max) - , . It is total dose hardened to 300krad (Si) and offers guaranteed performance over the full -55C to , to DSCC SMD # 5962-02542 Radiation Environment Total Dose 300krad (Si)(Max) Latch-Up Immune SET


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PDF ISL7124SRH FN9090 ISL7124SRH HS-5104ARH HS-OP470ARH ISL7124 smd transistor equivalent table
2005 - Not Available

Abstract: No abstract text available
Text: Time (1) (2) (3) Typical (2) 300KRad 1MRad 300KRad 1MRad Worst Case (3) -55 to 125°C Min Max 20 25 ns 20 25 3 300KRad 1MRad 20 25 4 8 25 5 10 5 0 5 ns ns ns , ) (5) Typical (2) 300KRad 1MRad 300KRad 1MRad 300KRad 1MRad 300KRad 1MRad 300KRad 1MRad


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PDF HX6408
1998 - AN-999

Abstract: No abstract text available
Text: process samples are irradiated at 0, 100 and 300Krad (Si). Given the test program consists of several , sample consisting of 8 devices may pass all tests at 0, 100 and 300Krad (Si), yet if one device fails the VGS(th) at 600Krad (Si) the wafer will only be qualified to 300Krad (Si). The parametric test


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PDF AN-999 MIL-PRF-19500 300Krad 600Krad AN-999
AN-999

Abstract: No abstract text available
Text: Finally, the P channel MEGA RAD HARD process samples are irradiated at 0, 100 and 300Krad (Si). Given , 300Krad (Si), yet if one device fails the VGS(th) at 600Krad (Si) the wafer will only be qualified to 300Krad (Si). The parametric test limits and thus the acceptability of each wafer are controlled by the


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PDF AN-999 300Krad 600Krad AN-999
2012 - 5962F1222801VXC

Abstract: dx mark smd diode smd diode JC 7 ISL70417SEHVF ISL70417SEHVX
Text: . . 73.9 MeV·cm2/mg - Total Dose, High Dose Rate . . . . . . . . . . . . . . . 300krad (Si) - Total , temperature range, -55°C to +125°C; over a total ionizing dose of 300krad (Si) with exposure at a high dose rate of 50 - 300krad (Si)/s; and over a total ionizing dose of 50krad(Si) with exposure a low dose rate , apply over the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad (Si) with exposure at a high dose rate of 50 - 300krad (Si)/s; and over a total ionizing dose of 50krad(Si


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PDF ISL70417SEH ISL70417SEH 038mm) FN7962 5962F1222801VXC dx mark smd diode smd diode JC 7 ISL70417SEHVF ISL70417SEHVX
2012 - Not Available

Abstract: No abstract text available
Text: . . 73.9 MeV·cm2/mg - Total Dose, High Dose Rate . . . . . . . . . . . . . . . 300krad (Si) - Total , apply over the operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad (Si) with exposure at a high dose rate of 50 - 300krad (Si)/s; and over a total ionizing dose of 50krad(Si , a total ionizing dose of 300krad (Si) with exposure at a high dose rate of 50 - 300krad (Si)/s; and , operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad (Si) with exposure at a


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PDF ISL70417SEH ISL70417SEH 038mm) FN7962
2012 - Not Available

Abstract: No abstract text available
Text: . . . . 300krad (Si) - Total dose, low dose rate . . . . . . . . . . . . . . . . 100krad(Si)* - SEL , dose of 300krad (Si) with exposure at a high dose rate of 50 - 300krad (Si)/s; and over a total ionizing , operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad (Si) with exposure at a high dose rate of 50 - 300krad (Si)/s; and over a total ionizing dose of 50krad(Si) with exposure , temperature range, -55°C to +125°C; over a total ionizing dose of 300krad (Si) with exposure at a high dose


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PDF ISL70417SEH ISL70417SEH 038mm) FN7962
2002 - IS-1825ASRH

Abstract: 5962F0251101QEC 5962F0251101QXC 5962F0251101VEC IS1-1825ASRH-8 IS9-1825ASRH-8 IS9-1825ASRH-Q
Text: guaranteed and tested for 300krad (Si) total dose performance. Detailed Electrical Specifications for these , . . . . . . . . . . . . . 300krad (SI) (max) - Latch-up Immune . . . . . . . . . . . . .


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PDF IS-1825ASRH FN9065 IS-1825ASRH 5962F0251101QEC 5962F0251101QXC 5962F0251101VEC IS1-1825ASRH-8 IS9-1825ASRH-8 IS9-1825ASRH-Q
2002 - CDFP3-F14

Abstract: 5962F0254201VXC ISL7124SRH ISL7124SRHF ISL7124SRHQF ISL7124SRHVF
Text: 5962-02542 · Radiation Environment - Total Dose. . . . . . . . . . . . . . . . . . . . . . 300krad (Si)(Max , total dose hardened to 300krad (Si) and offers guaranteed performance over the full -55C to +125C


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PDF ISL7124SRH FN9090 MIL-PRF-38535 ISL7124SRH 300krad CDFP3-F14 5962F0254201VXC ISL7124SRHF ISL7124SRHQF ISL7124SRHVF
2000 - IS-1845ASRH

Abstract: CDIP2-T8
Text: -38535 Requirements · Radiation Environment - Total Dose. . . . . . . . . . . . . . . . . . . . . 300krad (SI) (max) - , 300krad (Si) total dose performance. Detailed Electrical Specifications for these devices are contained in


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PDF IS-1845ASRH IS-1845ASRH MIL-PRF-38535 300krad CDIP2-T8
2002 - 5962F0251101VXC

Abstract: 5962F0251101QEC 5962F0251101QXC IS1-1825ASRH-8 IS1-1825ASRH-Q IS-1825ASRH IS9-1825ASRH-8 IS9-1825ASRH-Q rt/CDFP4-F20 rt/5962F0251101VXC
Text: guaranteed and tested for 300krad (Si) total dose performance. Detailed Electrical Specifications for these , . . . . . . . . . . . . . 300krad (SI) (max) - Latch-up Immune . . . . . . . . . . . . .


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PDF IS-1825ASRH FN9065 5962F0251101VXC 5962F0251101QEC 5962F0251101QXC IS1-1825ASRH-8 IS1-1825ASRH-Q IS-1825ASRH IS9-1825ASRH-8 IS9-1825ASRH-Q rt/CDFP4-F20 rt/5962F0251101VXC
2006 - lm328

Abstract: lm328 datasheet cmos testing abstract 8 pin LM328 ic HS9-139RH SMD 5962-98613 pin out of lm328 LM139 user acceptance DIELECTRICALLY ISOLATED INTERSIL BIPOLAR
Text: to a 300krad (Si) total dose specification takes a maximum of 1.67 hours, enabling the test to be , our current Gammacell is approximately 130rad(Si)/s, and the 300krad (Si) test takes 38 minutes. In , after 300krad (Si) at .01rad(Si)/s. Additionally, baseline 100krad(Si) low dose rate test of the HS9 , -139RH showed some degradation after 300krad (Si) at low dose rate, but the devices remained within their post-radiation and temperature specification limits to a total dose of 300krad (Si). In Figure 2 we show plots [5


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PDF HS9-139RH 100krad Cobalt-60 lm328 lm328 datasheet cmos testing abstract 8 pin LM328 ic SMD 5962-98613 pin out of lm328 LM139 user acceptance DIELECTRICALLY ISOLATED INTERSIL BIPOLAR
2008 - motorola LM324

Abstract: LM324 OPERATIONAL AMPLIFIER IS-1009 constant current load using lm324 IS1009RH CDFP3-F28 LM324 SMD HS9-139RH HS9S-117RH LM139
Text: of the dose rate specification range, a lot qualification test to a 300krad (Si) total dose , approximately 130rad(Si)/s, and the 300krad (Si) test takes 38 minutes. In the 1992 ­ 1993 time frame , comparator, which was found to be within its post-radiation parametric limits after 300krad (Si) at .01rad(Si , qualified per MIL-PRF-38535 requirements Radiation environment: o Total dose (maximum) 300krad (Si) o , represents several lots and the populations are different. The data shows pre-irradiation and post 300krad


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PDF ISL72991RH 85krad motorola LM324 LM324 OPERATIONAL AMPLIFIER IS-1009 constant current load using lm324 IS1009RH CDFP3-F28 LM324 SMD HS9-139RH HS9S-117RH LM139
2002 - Not Available

Abstract: No abstract text available
Text: hardened to 300krad (Si) and offer guaranteed performance over the full -55°C to +125°C military temperature , 5962-02542 · Radiation Environment - Total Dose . . . . . . . . . . . . . . . . . . . . . . . . . . 300krad (Si


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PDF ISL7124SRH, ISL7124SEH ISL7124SEH FN9090
2006 - 5962F9581304VXC

Abstract: 5962F9581304QXC smd transistor s3 HI-303 HS-303ARH HS-303RH 60MeV-mg 3d1431 5962F9581304VCC
Text: equivalent to the HS-303RH, but offers improved 300kRAD (Si) total dose capability. This switch offers , stays reasonably constant when exposed to radiation, being typically 29 pre-rad and 34 post- 300kRAD (Si


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PDF HS-303ARH FN6411 MIL-PRF-38535 HS-303ARH HS-303RH, 300kRAD 5962F9581304VXC 5962F9581304QXC smd transistor s3 HI-303 HS-303RH 60MeV-mg 3d1431 5962F9581304VCC
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