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Part Manufacturer Description Datasheet Download Buy Part
LTC1262CS8#TRPBF Linear Technology LTC1262 - 12V, 30mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LTC1262IS8#PBF Linear Technology LTC1262 - 12V, 30mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LTC1262IS8 Linear Technology LTC1262 - 12V, 30mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LTC1262CS8 Linear Technology LTC1262 - 12V, 30mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LTC1262CS8#TR Linear Technology LTC1262 - 12V, 30mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LTC1263CS8#PBF Linear Technology LTC1263 - 12V, 60mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C

30-pin simm memory "16m x 8" Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - 30 pin simm memory

Abstract: 30-pin simm memory circuit diagram for Basic Stamp 2 electronics hobby circuit electronics hobby circuits Wirz Electronics 30 pin simm DT00-1
Text: multiple vendors. SimmStickTM has the form factor of a 30 Pin SIMM Memory Module. They are designed to be easily plugged together to form hardware circuits using a SIMM Socket back plane or by direct connection with pin headers. The small form factor and onboard power supply makes Stamp Stick useful for , Cable ck Pinout Stamp Stick 2SX Pinout Pin Num 1 2 3 4 5 6 7 8 9 10 11 12 13 14 , 6 User I/O 7 User I/O 8 User I/O 9 User I/O 10 User I/O 11 User I/O 12 User I/O 13 User I/O


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1995 - 30-pin simm memory

Abstract: award 586 30 pin simm memory ALI m5123 usb Mouse mitsumi P54C SK084 430VX M5123 A1 npnx dimm
Text: buy 72- pin SIMM memory modules anymore, just as now you cannot find 30-pin SIMM memory modules , memory (Pipeline Burst SRAM) l Cache memory upgradeable to 512K 5. System DRAM l Four 72- pin SIMM , 3.3V unbuffered DIMM sockets. 2. Four 72- pin SIMM sockets: Currently, the most common memory modules , Scenario 1: You use only 72- pin SIMM modules: l The maximum memory size is 128M bytes. l Support possible , Burst SRAM to 512K. Two 168- pin DIMM slots and four 72- pin SIMM slots meet the requirements for all


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Flash SIMM 80

Abstract: UGF6R1632J843C E28F128J3A
Text: UGF6R1632J843C Data sheets can be downloaded at www.unigen.com 64M Bytes ( 16M x 32 bits) LINEAR FLASH MODULE 80 Pin Strata Flash SIMM based on 4 pcs 16M x 8 Strata Flash GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 80 Pin SIMM The UGF6R1632J843C is a 16,777,216 bits by 32 FLASH SIMM module .The UGF6R1632J843C is assembled using 4 pcs of 16M x 8 Intel E28F128J3A FLASH , JEDEC standard pinout In an 80- Pin Single in-line Memory Module ( SIMM ) High Performance CMOS Silicon


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PDF UGF6R1632J843C UGF6R1632J843C E28F128J3A 80-Pin Flash SIMM 80 E28F128J3A
2001 - Not Available

Abstract: No abstract text available
Text: DESCRIPTION The UGF6R1632J843C is a 16,777,216 bits by 32 FLASH SIMM module .The UGF6R1632J843C is assembled using 4 pcs of 16M x 8 Intel E28F128J3A FLASH Memory in 56 Pin TSOP packages mounted on a 80 pin unbuffered printed circuit board. 64M Bytes ( 16M x 32 bits) 80 Pin Strata Flash SIMM based on 4 pcs 16M x 8 Strata Flash PIN ASSIGNMENT (Front View) 80 Pin SIMM FEATURES · power supplies : · · · · , in-line Memory Module ( SIMM ) High Performance CMOS Silicon Gate Process TTL compatible inputs and outputs


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PDF UGF6R1632J843C UGF6R1632J843C E28F128J3A 80-Pin
2001 - Not Available

Abstract: No abstract text available
Text: DESCRIPTION The UGF6R3232J848CS is a 33,554,432 bits by 32 FLASH SIMM module .The UGF6R3232J848CS is assembled using 8 pcs of 16M x 8 Intel 28F128J3A FLASH Memory in 64 Pin EZBGA packages mounted on a 80 pin unbuffered printed circuit board. 128M Bytes (32M x 32 bits) 80 Pin Strata Flash SIMM based on 8 pcs 16M x 8 Strata Flash PIN ASSIGNMENT (Front View) 80 Pin SIMM FEATURES · power supplies : · · · · , in-line Memory Module ( SIMM ) High Performance CMOS Silicon Gate Process TTL compatible inputs and outputs


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PDF UGF6R3232J848CS UGF6R3232J848CS 28F128J3A 80-Pin Tim15
28F128J3A

Abstract: UGF6R3232J848CS 28F128 jedec 64-pin simm
Text: ) LINEAR FLASH MODULE 80 Pin Strata Flash SIMM based on 8 pcs 16M x 8 Strata Flash GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 80 Pin SIMM The UGF6R3232J848CS is a 33,554,432 bits by 32 FLASH SIMM module .The UGF6R3232J848CS is assembled using 8 pcs of 16M x 8 Intel 28F128J3A FLASH Memory in 64 Pin EZBGA packages mounted on a 80 pin unbuffered printed circuit board. FEATURES · , JEDEC standard pinout In an 80- Pin Single in-line Memory Module ( SIMM ) High Performance CMOS Silicon


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PDF UGF6R3232J848CS UGF6R3232J848CS 28F128J3A 80-Pin 28F128J3A 28F128 jedec 64-pin simm
UGF6R3232J843C

Abstract: 128m simm 72 pin
Text: ) LINEAR FLASH MODULE 80 Pin Strata Flash SIMM based on 8 pcs 16M x 8 Strata Flash GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 80 Pin SIMM The UGF6R3232J843C is a 33,554,432 bits by 32 FLASH SIMM module .The UGF6R3232J843C is assembled using 8 pcs of 16M x 8 Intel E28F128J3A FLASH Memory in 56 Pin TSOP packages mounted on a 80 pin unbuffered printed circuit board. FEATURES · , JEDEC standard pinout In an 80- Pin Single in-line Memory Module ( SIMM ) High Performance CMOS Silicon


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PDF UGF6R3232J843C UGF6R3232J843C E28F128J3A 80-Pin 128m simm 72 pin
motorola 16M CMOS DRAM

Abstract: mcm517400
Text: SEMICONDUCTOR TECHNICAL DATA Product Preview MCM81600 MCM8L1600 16M x 8 Bit Dynamic Random Access Memory Module The MCM81600 is a dynamic random access memory (DRAM) module organized as 16,777,216 x 8 bits. The module is a 30-lead single-in-line memory module ( SIMM ) consisting of eight , 5-51 COPYRIGHT ASPECT DEVELOPMENT, INC. 1994. MOTODOIO 16M X 8 BLOCK DIAGRAM N O TE , Cycle Refresh: MCM81600 = 32 ms Consists of Eight 16M x 1 DRAMs and Eight 0.22 nF (Min) Decoupling


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PDF MCM81600 MCM8L1600 30-lead MCM517400 MOTOD010 motorola 16M CMOS DRAM
2001 - Not Available

Abstract: No abstract text available
Text: DESCRIPTION The UGF6R3232J843C is a 33,554,432 bits by 32 FLASH SIMM module .The UGF6R3232J843C is assembled using 8 pcs of 16M x 8 Intel E28F128J3A FLASH Memory in 56 Pin TSOP packages mounted on a 80 pin unbuffered printed circuit board. 128M Bytes (32M x 32 bits) 80 Pin Strata Flash SIMM based on 8 pcs 16M x 8 Strata Flash PIN ASSIGNMENT (Front View) 80 Pin SIMM FEATURES · power supplies : · · · · , in-line Memory Module ( SIMM ) High Performance CMOS Silicon Gate Process TTL compatible inputs and outputs


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PDF UGF6R3232J843C UGF6R3232J843C E28F128J3A 80-Pin
Not Available

Abstract: No abstract text available
Text: organized as 16,777,216 x 8 bits. The module is a 30-lead single-in-line memory module ( SIMM ) consisting ot , MOTOROLA SC ( MEMORY /ASIC) MOTOROLA 5ÛE D b3b7251 OOB74bE T 4 0 H 0 T 3 2J> - f g _ - o SEMICONDUCTOR TECHNICAL DATA Product Preview MCM81600 MCM8L1600 16M x 8 Bit , 74b 3 8ä7 M0T3 16M X 8 BLOCK DIAGRAM DQ1 * D AO-A11 W CÄS RÄS Q DQO D A0-A11 , Refresh Hidden Refresh 2048 Cycle Refresh: MCM81600 = 32 ms Consists of Eight 16M x 1 DRAMs and Eight 0.22


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PDF b3b7251 OOB74bE MCM81600 MCM8L1600 30-lead MCM517400 AO-A11
128MB 72-pin SIMM

Abstract: dram 72-pin simm 128mb SL32 SL32S4F32M4E-A60C SL32T4F32M4E-A60C
Text: 15ns The SiliconTech SL32(S/T)4F32M4E-A60C is a 32M x 32 bits Dynamic RAM (DRAM) Single In-line Memory Module ( SIMM ). This module consists of eight CMOS 16M x 8 bits DRAM stacks mounted on a 72- pin , SL32(S/T)4F32M4E-A60C 32M X 32 Bits (128MB) DRAM 72- Pin SIMM with Extended Data Out (EDO , ,907). Each stack consists of two 16M x 4 bits DRAMs in 400-mil 32- pin TSOP-II packages. Decoupling , mounting into 72- pin SIMM edge connector sockets with the same lead (i.e. gold or tin). PIN


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PDF 4F32M4E-A60C 128MB) 72-Pin 4F32M4E-A60C 400-mil 32-pin 104ns A0-A11 128MB 72-pin SIMM dram 72-pin simm 128mb SL32 SL32S4F32M4E-A60C SL32T4F32M4E-A60C
Not Available

Abstract: No abstract text available
Text: HYM581600 M-Series •H Y U N D A I 16M X 8 -bit CMOS ORAM MODULE DESCRIPTION The HYM581600 is a 16M x 8 -bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ , suitable for easy interchange and addition of 16M byte memory . FEATURES PIN CONNECTION »Low , – 4b750flê 00033m b7^ ■HYM581600 M-Series •HYUNDAI PIN NAME # 1 2 3 4 5 6 7 8 , INFORMATION 30 pin Single In-line Memory Module (M ; Tin-Lead plated) HYM581600M/LM (SOJ mounted) UNIT


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PDF HYM581600 HY5116100 22/xF HYM581600M/LM/TM/LTM 891MAX HYM581600TM/LTM 25IMAX. 1BD01-01-FEB94
Not Available

Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8 -bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8 -bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor , Memory Modules suitable for easy interchange and addition of 16M byte memory . FEATURES PIN , 30 pin Single In-line Memory Module (M ; Un-Lead plated) HYM581600M/LM (SOJ mounted) U IT:INH m N


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PDF HYM581600 HY5116100 HYM581600M/LM/TM/LTM HYM581600TM/LTM 1BD01-00-MAY93 HYM581600M HYM581600LM HYM581600TM
D0200

Abstract: No abstract text available
Text: " H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 6 1 0 S e r ie s 16M X 8 -bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581610 is a 16M x 8 -bit Fast page mode CMOS DRAM module consisting of eight , In-line Memory Modules suitable for easy interchange and addition of 16M byte memory . PIN CONNECTION , HYM581610 Series PIN NAME # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 , INFORMATION 30 pin Single In-line Memory Module (M ; Tin-Lead plated) HYM581610M/LM (S O J mounted) U N IT


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PDF HYM581610 HY5117100 HYM581610M/LM/TM/LTM HYM581610TM/LTM 251MAX. 1BD02-00-MA HYM581610M HYM581610LM HYM581610TM D0200
SL36S8L32M4K-A60C

Abstract: SL36T8L32M4K-A60C
Text: 15ns 104ns The SiliconTech SL36(S/T)8L32M4K-A60C is a 32M x 36 bits Dynamic RAM (DRAM) Single In-line Memory Module ( SIMM ). The module consists of eight 16M x 8 bits and four 32M x 4 bits IC Towers. Each IC tower consists of two CMOS 16M x 4 bits 3.3V DRAMs in 32- pin 400-mil TSOP-II packages. The , SL36(S/T)8L32M4K-A60C 32M X 36 Bits DRAM 72- Pin SIMM with Extended Data Out (EDO) and Parity , . The module is intended for mounting into 72- pin SIMM edge connector sockets with 5V power supply and


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PDF 8L32M4K-A60C 72-Pin 104ns 8L32M4K-A60C 32-pin 400-mil BDQ0-BDQ35 SL36S8L32M4K-A60C SL36T8L32M4K-A60C
simm EDO 72pin

Abstract: SL32 SL32S8L32M4E-A60C SL32T8L32M4E-A60C BDQ8-11 edo ram 72pin edo dram 60ns 72-pin simm
Text: The SiliconTech SL32(S/T)8L32M4E-A60C is a 32M x 32 bits Dynamic RAM (DRAM) Single In-line Memory Module ( SIMM ). The module consists of eight 16M x 8 bits IC Towers. Each IC tower consists of two CMOS 16M x 4 bits 3.3V DRAMs in 32pin 400-mil TSOP-II packages. The SiliconTech IC Tower stacking , SL32(S/T)8L32M4E-A60C 32M X 32 Bits DRAM 72- Pin SIMM with Extended Data Out (EDO) FEATURES · , . The module is intended for mounting into 72- pin SIMM edge connector sockets with 5V power supply and


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PDF 8L32M4E-A60C 72-Pin 104ns 8L32M4E-A60C 32pin 400-mil BA0-BA11 BDQ0-BDQ31 simm EDO 72pin SL32 SL32S8L32M4E-A60C SL32T8L32M4E-A60C BDQ8-11 edo ram 72pin edo dram 60ns 72-pin simm
Not Available

Abstract: No abstract text available
Text: HYM581610 M -Series HYUNDAI 16M x8-bit CMOS DRAM MODULE DESCRIPTION The HYM581610 is a 16M x 8 -bit Fast page mode CMOS DRAM module consisting of eight HY5117100 in 24/28 pin SOJ or TSOP-il on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM , easy interchange and addition of 16M byte memory . FEATURES PIN CONNECTION • Low power , pin Single In-line Memory Module (M ; Tin-Lead plated) HYM581610M/LM (SGJ mounted) UNIT: INCH (mm


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PDF HYM581610 HY5117100 22//F HYM581610M/LM/TM/LTM 350fB 891MAX. 08ffi HYM581610TM/LTM 361MAX.
30-pin simm memory "16m x 8"

Abstract: 30-pin simm memory 30-pin SIMM RAM
Text: STI816100 30- PIN SIMMS 16M X 8 DRAM SIMM Memory Module FEATURES · Performance range: *RAC ^CAC *RC GENERAL DESCRIPTION The Simple Technology STI816100 is a 16M bit x 8 Dynamic RAM high density memory module. The Simple Technology STI816100 consist of eight CMOS 16M x 1 DRAMs in 24- pin SOJ package mounted on a 30- pin glass epoxy substrate. A 0.1]iF decoupling capacitor is mounted for each DRAM. The STI816100 is a Single In-line Memory Module with tin (STI816100-xxT) or gold (STI816100-xxG) edgs


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PDF STI816100 30-PIN STI816100 24-pin STI816100-xxT) STI816100-xxG) 30-pin simm memory "16m x 8" 30-pin simm memory 30-pin SIMM RAM
2005 - 69F1608

Abstract: No abstract text available
Text: ( 16M x 8 -Bit) Flash Memory Module 69F1608 24 PIN RAD-PAK® FLAT PACKAGE DIMENSION SYMBOL MIN , 69F1608 128 Megabit ( 16M x 8 -Bit) Flash Memory Module FEATURES: DESCRIPTION: · Single 5.0 V supply Maxwell Technologies' 69F1608 high-performance flash memory is a 16M x 8 -bit NAND , . Memory Logic Diagram (1 of 4 Die) 128 Megabit ( 16M x 8 -Bit) Flash Memory Module 69F1608 , 128 Megabit ( 16M x 8 -Bit) Flash Memory Module TABLE 6. 69F1608 DC AND OPERATING CHARACTERISTICS (VCC


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PDF 69F1608 69F1608 528-byte
2008 - 69F1608

Abstract: No abstract text available
Text: ( 16M x 8 -Bit) Flash Memory Module 69F1608 24 PIN RAD-PAK® FLAT PACKAGE DIMENSION SYMBOL MIN , 69F1608 128 Megabit ( 16M x 8 -Bit) Flash Memory Module FEATURES: DESCRIPTION: · Single 5.0 V supply Maxwell Technologies' 69F1608 high-performance flash memory is a 16M x 8 -bit NAND , . Memory Logic Diagram (1 of 4 Die) 128 Megabit ( 16M x 8 -Bit) Flash Memory Module 69F1608 , 128 Megabit ( 16M x 8 -Bit) Flash Memory Module TABLE 6. 69F1608 DC AND OPERATING CHARACTERISTICS (VCC


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PDF 69F1608 69F1608 528-byte
1997 - 3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 16Mbit FRAM HM62832 hm62256 Dram 168 pin EDO 8Mx8 flash 32 Pin PLCC 16mbit HN27C1024
Text: 32 HB56A1632 5V SIMM 72 16M (x1) based Memory Shortform, x 36 Fast Page Mode DRAM , HB56U132 4M (x4) based 5V 60, 70 SIMM 72 16M (x16) based / 1M x 32 HB56H132 1k cycles 4M (x4) based / HB56U232 60, 70, 80 2k cycles 5V SIMM 72 2M x 32 16M (x16) based / HB56H232 60, 70 1k cycles 16M (x4) based / 60, 70, 80 SIMM 72 4M x 32 HB56U432 5V 2k cycles 16M (x4) based / 60, 70, 80 SIMM , 2M x 32 SIMM 72 3.3V SO DIMM 72 16M (x8) based / 2k refresh SIMM 72 16M (x4


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PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 16Mbit FRAM HM62832 hm62256 Dram 168 pin EDO 8Mx8 flash 32 Pin PLCC 16mbit HN27C1024
2005 - Not Available

Abstract: No abstract text available
Text: ( 16M x 8 -Bit) Flash Memory Module 69F1608 24 PIN RAD-PAK® FLAT PACKAGE DIMENSION SYMBOL MIN , 69F1608 128 Megabit ( 16M x 8 -Bit) Flash Memory Module FEATURES: DESCRIPTION: • Single 5.0 V supply Maxwell Technologies’ 69F1608 high-performance flash memory is a 16M x 8 , . Memory Logic Diagram (1 of 4 Die) 128 Megabit ( 16M x 8 -Bit) Flash Memory Module 69F1608 TABLE , reserved. 69F1608 128 Megabit ( 16M x 8 -Bit) Flash Memory Module TABLE 6. 69F1608 DC AND OPERATING


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PDF 69F1608 69F1608 528-byte 69F1608â
2004 - "NAND Flash"

Abstract: voice activated recorder circuit 8bit nand flash flash memory 16M 69F1608
Text: ) 128 Megabit ( 16M x 8 -Bit) Flash Memory Module 69F1608 TABLE 1. PINOUT DESCRIPTION PIN SYMBOL , ( 16M x 8 -Bit) Flash Memory Module 69F1608 24 PIN RAD-PAK® FLAT PACKAGE DIMENSION SYMBOL MIN , 69F1608 128 Megabit ( 16M x 8 -Bit) Flash Memory Module FEATURES: DESCRIPTION: · Single 5.0 V supply Maxwell Technologies' 69F1608 high-performance flash memory is a 16M x 8 -bit NAND , reserved. 69F1608 128 Megabit ( 16M x 8 -Bit) Flash Memory Module TABLE 2. 69F1608 ABSOLUTE MAXIMUM


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PDF 69F1608 69F1608 528-byte "NAND Flash" voice activated recorder circuit 8bit nand flash flash memory 16M
2000 - Not Available

Abstract: No abstract text available
Text: . The AVED Memory Products AMP374P1723BT2-C75 consists of nine CMOS 16M X 8 bit with 4 banks , Memory Merge AMP374P1723BT2-C75 16M X 72 SDRAM DIMM with ECC based on 16M X 8 , 4 Banks, 4K REFRESH , SDRAM DIMM with ECC based on 16M X 8 , 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD PIN , Memory Merge AMP374P1723BT2-C75 16M X 72 SDRAM DIMM with ECC based on 16M X 8 , 4 Banks, 4K REFRESH , & Memory Merge AMP374P1723BT2-C75 16M X 72 SDRAM DIMM with ECC based on 16M X 8 , 4 Banks, 4K


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PDF AMP374P1723BT2-C75 AMP374P1723BT2-C75 400mil 168-pin 100MHz PC100
2000 - Not Available

Abstract: No abstract text available
Text: based on 16M X 8 , 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory , AVED Memory Products AMP366P1723BTE-C1H/S consists of eight CMOS 16M X 8 bit with 4 banks Synchronous , SDRAM DIMM based on 16M X 8 , 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD PIN CONFIGURATIONS , SDRAM DIMM based on 16M X 8 , 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD PIN CONFIGURATION , Where Quality & Memory Merge AMP366P1723BTE-C1H/S 16M X 64 SDRAM DIMM based on 16M X 8 , 4 Banks


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PDF AMP366P1723BTE-C1H/S AMP366P1723BTE-C1H/S 400mil 168-pin 168-pi 100MHz
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