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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2SD965-R DC Components Co Ltd TME Electronic Components 694 $0.15 $0.05
HW-14-12-S-D-965-SM Samtec Inc Avnet - $5.89 $3.99
HW-14-12-S-D-965-SM Samtec Inc Newark element14 100 $6.87 $3.81
HW-14-12-S-D-965-SM Samtec Inc Sager 28 $5.36 $3.22
HW-14-12-S-D-965-SM Samtec Inc Samtec 29 $4.87 $2.67

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2sd965 datasheet (24)

Part Manufacturer Description Type PDF
2SD965 Kexin Silicon NPN epitaxial planar type Original PDF
2SD965 Others NPN SILICON TRANSISTOR Original PDF
2SD965 Panasonic Silicon NPN epitaxial planer type transistor Original PDF
2SD965 Panasonic NPN Transistor Original PDF
2SD965 TY Semiconductor Silicon NPN epitaxial planar type - SOT-89 Original PDF
2SD965 Various Russian Datasheets Transistor Original PDF
2SD965 Wing Shing Computer Components TRANSISTOR (NPN) Original PDF
2SD965 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SD965 Others Transistor Substitution Data Book 1993 Scan PDF
2SD965 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SD965 Others The Japanese Transistor Manual 1981 Scan PDF
2SD965 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SD965 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SD965 Others Shortform Transistor PDF Datasheet Scan PDF
2SD965 Others Japanese Transistor Cross References (2S) Scan PDF
2SD965A Unisonic Technologies LOW VOLTAGE HIGH CURRENT TRANSISTOR Original PDF
2SD965B Unisonic Technologies LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR Original PDF
2SD965K Kexin Silicon NPN epitaxial planar type Original PDF
2SD965K TY Semiconductor Silicon NPN epitaxial planar type - SOT-89 Original PDF
2SD965-Q Kexin NPN Silicon Epitaxial Transistors Original PDF

2sd965 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - 2SD965

Abstract: No abstract text available
Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , 2SD965 2SD965A Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta , Collector-emitter breakdown voltage 2SD965 2SD965A Emitter-base breakdown voltage Collector cut-off current , 150 800 1 150 UNISONIC TECHNOLOGIES CO. LTD V MHz 1 QW-R201-007,B UTC 2SD965 /A


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PDF 2SD965/A 2SD965 2SD965A QW-R201-007 2SD965
2005 - 2SD965

Abstract: 2SD965AL 2sd965l 2sd965 transistor 2SD965A
Text: : 2SD965L / 2SD965AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD965-x-AB3-R 2SD965L-x-AB3-R 2SD965-x-T92-B 2SD965L-x-T92-B 2SD965-x-T92-K 2SD965L-x-T92-K 2SD965-x-TN3-R 2SD965L-x-TN3-R 2SD965-x-TN3-T 2SD965L-x-TN3-T 2SD965A-x-AB3-R 2SD965AL-x-AB3-R 2SD965A-x-T92-B 2SD965AL-x-T92-B 2SD965A-x-T92-K 2SD965AL-x-T92-K 2SD965A-x-TN3-R 2SD965AL-x-TN3-R 2SD965A-x-TN3-T 2SD965AL-x-TN3-T Package SOT , Reel Tape Box Bulk Tape Reel Tube Tape Reel Tape Box Bulk Tape Reel Tube 2SD965L-x-AB3-R


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PDF 2SD965/A OT-89 2SD965: 2SD965A: O-252 2SD965L/2SD965AL 2SD965-x-AB3-R 2SD965L-x-AB3-R 2SD965-x-T92-B 2SD965L-x-T92-B 2SD965 2SD965AL 2sd965l 2sd965 transistor 2SD965A
2004 - sot 89 2sd965

Abstract: 2SD965
Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , Collector-base voltage Collector-emitter voltage 2SD965 2SD965A Emitter-base voltage Collector dissipation(Ta , voltage 2SD965 2SD965A Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC , UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE2 RANK RANGE Q 230-380 R


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PDF 2SD965/A 2SD965 2SD965A OT-89 2SD965 2SD965A QW-R208-003 sot 89 2sd965
2005 - 2SD965AL-AB3-R

Abstract: 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965
Text: : 2SD965L / 2SD965AL PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Collector 3 Base ORDERING INFORMATION Order Number Normal Lead Free 2SD965-AB3-R 2SD965L-AB3-R 2SD965A-AB3-R 2SD965AL-AB3-R Package SOT , 2SD965 Breakdown Voltage 2SD965A Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off , UNISONIC TECHNOLOGIES CO.,LTD. 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to


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PDF 2SD965/A 2SD965 2SD965A OT-89 2SD965L/2SD965AL 2SD965-AB3-R 2SD965L-AB3-R 2SD965A-AB3-R 2SD965AL-AB3-R OT-89 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965
2009 - 2SD965

Abstract: 2SD965AL 2SD965A 2sd965l 2sd965 transistor sot 89 2sd965 2SD965AG
Text: Normal 2SD965-x-AB3-R 2SD965-x-T92-B 2SD965-x-T92-K 2SD965-x-TN3-R 2SD965A-x-AB3-R 2SD965A-x-T92-B 2SD965A-x-T92-K 2SD965A-x-TN3-R Ordering Number Lead Free Halogen Free 2SD965L-x-AB3-R 2SD965G-x-AB3-R 2SD965L-x-T92-B 2SD965G-x-T92-B 2SD965L-x-T92-K 2SD965G-x-T92-K 2SD965L-x-TN3-R 2SD965G-x-TN3-R 2SD965AL-x-AB3-R 2SD965AG-x-AB3-R 2SD965AL-x-T92-B 2SD965AG-x-T92-B 2SD965AL-x-T92-K 2SD965AG-x-T92-K 2SD965AL-x-TN3-R 2SD965AG-x-TN3-R www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd


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PDF 2SD965/A 2SD965: 2SD965A: 2SD965L/2SD965AL 2SD965G/2SD965AG 2SD965-x-AB3-R 2SD965-x-T92-B 2SD965-x-T92-K 2SD965-x-TN3-R 2SD965A-x-AB3-R 2SD965 2SD965AL 2SD965A 2sd965l 2sd965 transistor sot 89 2sd965 2SD965AG
2004 - 2SD965

Abstract: No abstract text available
Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , Collector-base voltage Collector-emitter voltage 2SD965 2SD965A Emitter-base voltage Collector power dissipation , voltage 2SD965 2SD965A Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC , 2SD965 /A PARAMETER NPN EPITAXIAL SILICON TRANSISTOR SYMBOL fT Cob TEST CONDITIONS VCE=6V,Ic


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PDF 2SD965 2SD965 2SD965A O-252 2SD965A QW-R209-007
2015 - Not Available

Abstract: No abstract text available
Text: Lead Free Halogen Free 2SD965G-x-AB3-R SOT-89 2SD965L-x-T92-B 2SD965G-x-T92-B TO-92 2SD965L-x-T92-K 2SD965G-x-T92-K TO-92 2SD965L-x-TN3-R 2SD965G-x-TN3-R TO-252 2SD965AG-x-AB3-R SOT-89 2SD965AL-x-T92-B 2SD965AG-x-T92-B TO-92 2SD965AL-x-T92-K 2SD965AG-x-T92-K TO-92 2SD965AL-x-TN3-R 2SD965AG-x-TN3-R TO , MARKING 2SD965 2SD965A SOT-89 TO-252 TO-92 UNISONIC TECHNOLOGIES CO., LTD , =25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO 2SD965 2SD965A


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PDF 2SD965/A 2SD965: 2SD965A: 2SD965G-x-AB3-R OT-89 2SD965L-x-T92-B 2SD965G-x-T92-B 2SD965L-x-T92-K 2SD965G-x-T92-K 2SD965L-x-TN3-R
Not Available

Abstract: No abstract text available
Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , circuit TO-92 1: EMITTER 2: COLLECTOR 3: BASE *Pb-free plating product number: 2SD965L / 2SD965AL , 2SD965 2SD965A Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta , Collector-base breakdown voltage Collector-emitter breakdown voltage 2SD965 2SD965A Emitter-base breakdown


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PDF 2SD965/A 2SD965 2SD965A 2SD965L/2SD965AL QW-R201-007
2013 - Not Available

Abstract: No abstract text available
Text: Ordering Number Lead Free 2SD965L-x-AB3-R 2SD965L-x-T92-B 2SD965L-x-T92-K 2SD965L-x-TN3-R 2SD965AL-x-AB3-R 2SD965AL-x-T92-B 2SD965AL-x-T92-K 2SD965AL-x-TN3-R Halogen Free 2SD965G-x-AB3-R 2SD965G-x-T92-B 2SD965G-x-T92-K 2SD965G-x-TN3-R 2SD965AG-x-AB3-R 2SD965AG-x-T92-B 2SD965AG-x-T92-K 2SD965AG-x-TN3-R , 2SD965 2SD965A VEBO SOT-89 TO-92 TO-252 UNIT V V V V mW 750 1 5 VCEO , Voltage 2SD965 Collector-Emitter Breakdown Voltage 2SD965A Emitter-Base Breakdown Voltage Collector


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PDF 2SD965/A 2SD965: 2SD965A: 2SD965L-x-AB3-R 2SD965L-x-T92-B 2SD965L-x-T92-K 2SD965L-x-TN3-R 2SD965AL-x-AB3-R 2SD965AL-x-T92-B 2SD965AL-x-T92-K
2002 - 2SD965

Abstract: 2SD965A 2sd965 transistor
Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , 2SD965 2SD965A Emitter-base voltage Collector power dissipation Collector current Junction , CONDITIONS MIN Collector-base breakdown voltage Collector-emitter breakdown voltage 2SD965 2SD965A , 230 150 UNISONIC TECHNOLOGIES CO. LTD 800 1 V 1 QW-R209-007,A UTC 2SD965 /A NPN


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PDF 2SD965 2SD965 2SD965A O-252 QW-R209-007 2SD965A 2sd965 transistor
2004 - Not Available

Abstract: No abstract text available
Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , Collector-base voltage Collector-emitter voltage 2SD965 2SD965A Collector-emitter voltage Emitter-base , voltage 2SD965 2SD965A Emitter-base breakdown voltage Collector cut-off current Emitter cut-off , TECHNOLOGIES CO. LTD 50 V MHz pF 1 QW-R201-007,B UTC 2SD965 /A NPN EPITAXIAL SILICON


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PDF 2SD965/A 2SD965 2SD965A QW-R201-007
2005 - Not Available

Abstract: No abstract text available
Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , circuit TO-92 1: EMITTER 2: COLLECTOR 3: BASE *Pb-free plating product number: 2SD965L / 2SD965AL , 2SD965 2SD965A Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta , Collector-base breakdown voltage Collector-emitter breakdown voltage 2SD965 2SD965A Emitter-base breakdown


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PDF 2SD965/A 2SD965 2SD965A 2SD965L/2SD965AL QW-R201-007
2002 - 2sd965

Abstract: 2SD965A
Text: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , 2SD965 2SD965A Emitter-base voltage Collector dissipation(Ta=25°C) Collector current Junction , CONDITIONS MIN Collector-base breakdown voltage Collector-emitter breakdown voltage 2SD965 2SD965A , . LTD V MHz 1 QW-R208-003,B UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR PARAMETER


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PDF 2SD965/A 2SD965 2SD965A OT-89 QW-R208-003 2sd965 2SD965A
2005 - Not Available

Abstract: No abstract text available
Text: 2SD965 NPN Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 2SD965 TRANSISTOR( NPN ) TO i 92 FEATURES 1.EMITTER Power dissipation PCM : 0.75 Collector current ICM : 5 W(Tamb=25℃) 2. COLLECTOR 3 , of 3 2SD965 Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A NPN Transistor Any changing of specification will not be informed individual Page 2 of 3 2SD965 NPN


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PDF 2SD965 270TYP 050TYP 01-Jun-2002
2SB600 NEC

Abstract: 2SD965 2SD966 2SD2061 2sd1944 1951b 2SD1483 2sc3677 2SC3421 2SB600
Text: - 255 - m « Type No. tt « Manuf. z ft SANYO 3K S TOSHIBA 0 a NEC 0 fi HITACHI * ± a FUJITSU fé T MATSUSHITA Z » MITSUBISHI □ — A ROHM 2S0 1951 B m 2SD879 2SC3266 2SD965 2SD 1952 „ s a 2SD1624 2SC2873 2SD1119 2SD1963 2SD 1953 ^ = m 2SD1692 2SD1233 2 SD 1955 2SC4339 2SD1261 2SD 1956 □ —A 2SD866 2SD 1957 □ —A 2SD1271 2SD 1 958 f- H £ 2SC3299 2SD1270 2SD 1959,- 0 li 2SD1887 2SD1548 2SC3975 2SD 1960 □ -A 2SD965 2SD 1961 ~ â


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PDF 2SD879 2SC3266 2SD965 2SD1624 2SC2873 2SD1119 2SD1963 2SD1692 2SD1233 2SC4339 2SB600 NEC 2SD965 2SD966 2SD2061 2sd1944 1951b 2SD1483 2sc3677 2SC3421 2SB600
Not Available

Abstract: No abstract text available
Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistors 2SD965-Q SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ■Features ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 the low-voltage , MHz ■Marking Marking D965Q www.kexin.com.cn 1 Transistors IC SMD Type 2SD965-Q


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PDF 2SD965-Q OT-89 D965Q
2SD965

Abstract: C8010 2sd965 transistor
Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations , ST 2SD965 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit P hFE 120 , ST 2SD965 P C - Ta I C - VCE 1000 I C - VBE 2.4 6 VCE=2V Ta=25 C I B =7mA


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PDF 2SD965 2SD965 C8010 2sd965 transistor
2008 - Not Available

Abstract: No abstract text available
Text: –ƒ(DUTY=1/2) 燈泡 R 2SD965 KEY 3 2 1 L3 L2 L1 HILO OSCI OPT1 15 VSS , 11 12 12 燈 使 用 OFF 全 亮(60Hz, DUTY=4/5) 全 閃(DUTY=1/2) 燈泡 R 2SD965 , ³¡ R2 2SD965 KEY 3 2 1 L3 L2 L1 HILO KEY OPT2 16 5 CDT3176 OPT1 , . OFF B. 全亮 - 60Hz, 4/5 DUTY C. 全亮 - 1/2 DUTY R1 燈泡 R2 2SD965 KEY 3 2


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PDF CDT3176 470uF CDT-3176--- CDT-3176
2008 - IN4148

Abstract: IN4-148 iN4148+5t
Text: 為低電壓指示,可由外接電阻來調整偵測電壓點。 (3). L1 – 正輸出(+ 2SD965 推燈泡), L2 及 L3 – è² è¼¸å‡º(直接æ , 12 用 線 è·¯ 3VDC 燈泡 2SD965 4 3 2 LED L3 L2 1 KEY 6 OSCO , 2SD965 1 KEY 6 OSCO 7 OSCI 8 VIN VREF PS 470K CDT3272 9 470uF (ç©©å , ˆ° 更準確的偵測電壓值。 ■L1 + 470 uF (穩壓) - 2SD965 30 LED 29 L3 28 L2 27 L1 24


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PDF CDT-3272 2SD965 IN4148 CDT7230 CDT-3272 IN4148 IN4-148 iN4148+5t
2sd965 transistor

Abstract: 2SD965 2SD96
Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/08/2003 ST 2SD965 Characteristics , ) ® Dated : 11/08/2003 ST 2SD965 P C - Ta I C - VCE I C - VBE 6 2.4 1000 VCE=2V Ta


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PDF 2SD965 2sd965 transistor 2SD965 2SD96
2SD965

Abstract: 2sd965 transistor r10100 C8010 2SD965P
Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 11/08/2003 ST 2SD965 Characteristics at , ) R Dated : 11/08/2003 ST 2SD965 P C - Ta I C - VCE 1000 I C - VBE 2.4 6 VCE


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PDF 2SD965 2SD965 2sd965 transistor r10100 C8010 2SD965P
2006 - 2SD965

Abstract: 2sd965 transistor
Text: WEITRON 2SD965 NPN Transistor COLLECTOR 2. P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 3. BASE FEATURES : 1. EMITTER TO-92 * Flash unit of camera * Switching circuit MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation , 560-950 900-2000 WEITRON hpp://www.weitron.com.tw 1/2 01-Sep-09 2SD965 Ratings and


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PDF 2SD965 3000mA 30MHz 01-Sep-09 2SD965 2sd965 transistor
2sd965

Abstract: C8010 C5001
Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations , ST 2SD965 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit P hFE 120 , ST 2SD965 P C - Ta I C - VCE 1000 I C - VBE 6 2.4 VCE=2V Ta=25 C I B =7mA 2.0


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PDF 2SD965 2sd965 C8010 C5001
KA 3264

Abstract: 2SC3136 2SC3259 2SD689 K 3264 2SC3019 2SC2456 2SD1431 2sc2371 2SC2482
Text: ¿«JUllUl 2SD1328 2SC3440 2SÜ1781K 2SC 3266 ✓ S 3£ 2SD1246 2SD1513 2SD965 2SC 3267 ï S 2SD1246 , 2SC3277 2SC2137 2SC2740 2SC 3279 ' S S 2SD879 2SD1513 2SD965 2SC 3280 # S S 2SD1047


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PDF 2SC2979 2SC3508 2SC2555 2SC3322 2SD1457 2SC3306 2SC3509 2SD1706 2SD1707 KA 3264 2SC3136 2SC3259 2SD689 K 3264 2SC3019 2SC2456 2SD1431 2sc2371 2SC2482
2SD0965

Abstract: 2SD965
Text: ELECTRONIC CORP 2SD0965 ( 2SD965 ) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■Features • Low collector -emitter saturation voltage ^rECsat) * Satisfactory operation performances at high efficiency with the low-voltagc power supply. ■Absolute Maximum Ratings Ts = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V,:-EO 40 V , = 20 V. IE = 0, f = 1 MHz 26 50 pF ELECTRONIC CORP 2SD965 2.


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PDF 2SD0965 2SD965) O-92-BI 2SD965 2SD0965 2SD965
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