The Datasheet Archive

SF Impression Pixel

Search Stock (1)

  You can filter table by choosing multiple options from dropdownShowing 1 results of 1
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2SB834-O Toshiba America Electronic Components Chip1Stop 71 $7.09 $6.46

No Results Found

Show More

2sb834 datasheet (24)

Part Manufacturer Description Type PDF
2SB834 Transys Electronics Plastic-Encapsulated Transistors Original PDF
2SB834 Various Russian Datasheets Transistor Original PDF
2SB834 Wing Shing Computer Components PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original PDF
2SB834 Mospec POWER TRANSISTORS(3.0A,60V,30W) Scan PDF
2SB834 Mospec PNP Silicon Power Transistor Scan PDF
2SB834 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SB834 Others Shortform Transistor PDF Datasheet Scan PDF
2SB834 Others Japanese Transistor Cross References (2S) Scan PDF
2SB834 Others Cross Reference Datasheet Scan PDF
2SB834 Others Catalog Scans - Shortform Datasheet Scan PDF
2SB834 Others Catalog Scans - Shortform Datasheet Scan PDF
2SB834 Others Catalog Scans - Shortform Datasheet Scan PDF
2SB834 Others Catalog Scans - Shortform Datasheet Scan PDF
2SB834 Others Semiconductor Master Cross Reference Guide Scan PDF
2SB834 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SB834 Others Transistor Substitution Data Book 1993 Scan PDF
2SB834 Others The Japanese Transistor Manual 1981 Scan PDF
2SB834 Others Scan PDF
2SB834 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SB834 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF

2sb834 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Text: p la c e m e n t T y p e N o. 2SA1358 2SA1358 2SA1358 2SB834 , B1375 2SB596 2SB834 , B1375 2SB596 , y p e N o. 2SA970 2SB834 , B1375 _ _ 2SB834 , B1375 2SA429G-TM - 2SA950 2SA950 2SB595, B1016 2SA1358 2SB596 2SB1015 2SA1321 2SA1321 _ 2SA1302 2SA1049 2SA562TM 2SA1301 2SA1048 2SB834 , B1375 2SB834 , B1375 2SB834 , B1375 2SA1015 2SA562TM 2SA1015 2SA1015 2SA1015 2SA1015 - 2SA1015 2SA1015 2SB834 , B1375 2SB834 , B1375 2SB686 2SB686 - 2SA1356 2SA1356 2SA950 2SA1356 2SD718 2SD797 2SD797 2SD797 - 2SB686


OCR Scan
PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
2009 - 2SB834

Abstract: No abstract text available
Text: UNISO TE NIC CHNO G SCO LTD LO IE ., 2SB834 PNP SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G ̈ ORDERI N G I N FORM AT I ON Normal 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T Ordering Number Lead Free 2SB834L-x-T60-K 2SB834L-x-TA3-T 2SB834L-x-TF3-T Halogen Free 2SB834G-x-T60-K 2SB834G-x-TA3-T 2SB834G-x-TF3-T www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd


Original
PDF 2SB834 2SB834L 2SB834G 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T 2SB834L-x-T60-K 2SB834L-x-TA3-T 2SB834L-x-TF3-T 2SB834G-x-T60-K 2SB834
2005 - 2SB834

Abstract: 2SD880
Text: JMnic Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD880 APPLICATIONS Audio frequency power , Specification 2SB834 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , Product Specification 2SB834 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SB834 Silicon PNP


Original
PDF 2SB834 O-220 2SD880 2SB834 2SD880
2SB834

Abstract: 2SD880
Text: SavantIC Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD880 APPLICATIONS , temperature -55~150 SavantIC Semiconductor Product Specification 2SB834 Silicon PNP Power , Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SB834 SavantIC Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors 4 -


Original
PDF 2SB834 O-220 2SD880 2SB834 2SD880
2009 - 2SB834L

Abstract: utc 2sb834L 2SB834 2SB83 2sb834 transistor
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G ORDERING INFORMATION Normal 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T Ordering Number Lead Free 2SB834L-x-T60-K 2SB834L-x-TA3-T 2SB834L-x-TF3-T Halogen Free 2SB834G-x-T60-K 2SB834G-x-TA3-T 2SB834G-x-TF3-T www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Package TO


Original
PDF 2SB834 2SB834L 2SB834G 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T 2SB834L-x-T60-K 2SB834L-x-TA3-T 2SB834L-x-TF3-T 2SB834G-x-T60-K 2SB834L utc 2sb834L 2SB834 2SB83 2sb834 transistor
761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SA684 2SB737 2SB927 2SB686 761-B
Text: 2SB834 2SB703 2SB857 2SB941 2SB1369 2SB 761A fé t 2SB834 2SB703 2SB859 2SB941A 2SA1634 2SB 761B fé t 2SB834 2SB703A 2.SB859 2SB941A


OCR Scan
PDF 2SB927 2SB739 2SB1010 2SA1705 2SB740 2SA684 2SB1035 2SB1041 2SA133S 2SA1313 761b nec 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SB686 761-B
mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Text: 2SA1015 2SA486 2SA1358 2SA52 2SA1015 2SA305 2SA1015 2SA489 2SB834 , 2SB1375, 2SB596 2SA53 2SA1015 2SA311 2SA1015 2SA490 2SB834 , 2SB1375, 2SB596 2SA57 , 2SA1801 2SA679 2SA1265N 2SA1120 2SA1357 2SB25 2SB834 , 2SB1375 2SA680 2SA1265N 2SA1120 (NP) 2SA1357 2SB26 2SB834 , 2SB1375 2SA681 2SA1144 2SA1360 2SB26A 2SB834 , 2SB1375 2SA682 2SA1358 2SA1146 2SA1265N 2SB40 2SA1015 2SA739


Original
PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
2007 - 2SB834L

Abstract: 2SB834 utc 2sb834L 2SB83
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. *Pb-free plating product number: 2SB834L ORDERING INFORMATION Ordering Number Normal Lead Free Plating 2SB834-x-T60-K 2SB834L-x-T60-K 2SB834-x-TA3-T 2SB834L-x-TA3-T www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd Package TO , -018.C 2SB834 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless


Original
PDF 2SB834 2SB834L 2SB834-x-T60-K 2SB834L-x-T60-K 2SB834-x-TA3-T 2SB834L-x-TA3-T O-126 O-220 QW-R204-018 2SB834L 2SB834 utc 2sb834L 2SB83
2005 - 2SB834

Abstract: 2sb834 transistor 2SD880
Text: 2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat) 1.0V(MAX) @IC = 3.0A, IB = 0.3A * Complememtary to NPN 2SD880 ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating COLLECTOR 2 1 BASE 1 2 3 1. BASE , - -100 µA WEITRON http://www.weitron.com.tw 1/3 02-Feb-07 2SB834 ELECTRICAL , Range 60-120 100-200 WEITRON http://www.weitron.com.tw 2/3 02-Feb-07 2SB834 TO


Original
PDF 2SB834 2SD880 O-220 -500mA 02-Feb-07 O-220 2SB834 2sb834 transistor 2SD880
2012 - Not Available

Abstract: No abstract text available
Text: 2SB834 -3A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ITO-220J Power switching applications B N D E CLASSIFICATION OF hFE Product-Rank 2SB834-O 2SB834-Y Range 60~120 100~200 M H J C L Collector A K L G F 2 REF. 1 A B C D E F G Base 3 Emitter Millimeter Min. Max. 14.80 15.60 9.50 10.50


Original
PDF 2SB834 ITO-220J 2SB834-O 2SB834-Y -50mA, -500mA -500mA, 14-Aug-2012
2sb834

Abstract: 2sb834 transistor 2SB834 TOSHIBA 2SD880
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 2SB834 Unit in mm · · · Low Collector Saturation Voltage : v CE(sat)= -1.0V (Max.) at IC= -3 A , IB = -0.3A Collector Power Dissipation : P q = 30W (Tc = 25°C) Complementary to 2SD880. RATING MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage , NJ 1 2SB834 TO SH IBA 2SB834 RESTRICTIONS ON PRODUCT USE 000707EAA TOSHIBA is


OCR Scan
PDF 2SB834 2SD880. 200jury 2sb834 2sb834 transistor 2SB834 TOSHIBA 2SD880
2SA985 NEC

Abstract: 2s8834 2SB596 2SB56 2SA985 toshiba 2sb555 2SB834 2SB537 2SB508 2SA836
Text: 434 , X s 2SB507 ZSB834 2SA985 2SB566 00 2SB1369 2SB 435 - s 2 2SB507 2SB834 2SA985 ZSB566(K , îl 2SB561 2SB 502 ^ 3E "s. 2SB508 2SB834 2SB566AO!) 2SB 503 • 2SB508 2SB834 2SB566(K) 2SB1369 2SB 503A m 2SB508 2SB834 2SB941A 2SB 504 0 m 2SB508 2SB1369 2SB 504A 0


OCR Scan
PDF 2SB561 2SB56 2SA836 2SB562 2SB507 ZSB834 2SA985 2SA985 NEC 2s8834 2SB596 2SB56 toshiba 2sb555 2SB834 2SB537 2SB508 2SA836
2SB834

Abstract: 2sb834 equivalent 2sd880 equivalent 2SD880
Text: Inchange Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD880 APPLICATIONS , Product Specification 2SB834 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise , 2SB834 Silicon PNP Power Transistors PACKAGE OUTLINE TOR UC OND IC SEM GE , Product Specification 2SB834 Silicon PNP Power Transistors OND IC TOR UC SEM


Original
PDF 2SB834 O-220 2SD880 2SB834 2sb834 equivalent 2sd880 equivalent 2SD880
2SB834

Abstract: 2S8834 transistor 2s8834 2SD880
Text: Symbol 2SB834 Unit Collector-Emitter Voltage VCEO 60 V Collector-Base Voltage VCBO 60 V Emitter-Base , ,TEMPERATURE(»C) PNP 2SB834 3.0 AMPERE POWER TRANASISTORS 60 VOLTS 30 WATTS TO-220 I m * 2 3 e T , 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 2SB834 PNP , ) Classification :_ 60 O 120 100 Y 200 2SB834 PNP le - Vce 1.0 2.0 3.0 4.0 5.0 Vce , COLLECTOR-EMITTER


OCR Scan
PDF 2SD880 2SB834 2S8834 transistor 2s8834 2SD880
2005 - UTC2SB834

Abstract: No abstract text available
Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-126 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE , -018,B UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Ic-Vce POWER , UNISONIC TECHNOLOGIES CO. LTD 2 QW-R204-018,B UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R204-018,B UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR UTC


Original
PDF 2SB834 O-126 QW-R204-018 UTC2SB834
2SK 150A

Abstract: mg100g1al2 2SC2461 B 2SD1365 2sk30 1265N C366G MG15G1AL2 b1375 2SC102
Text: 2SA950 2SB595, B1016 2SA1358 2SB 596 2SB 1015 2SA970 2SB834 , B1375 - 2SA950 2SA817 2SA1015 2SA1015 2SB834 , B1375 2SB596, B1375 2SB834 , B1375 2SB596, B1375 2SB834 2SB834 2SA970 2SA970 2SA950 2SB834 2SB834 2SB595, B1375 2SB596, B1375 2SA1015 2SA970 2SB834 2SB834 2SB686 2SB686 2SA1357 2SB863, A 1265N 2SB863, A 1265N 2SB688 2SB688 2SB 863 2S A 1 3 0 2 2SA1321 2SA1321 2SB834 , B1375 2S A 429G -T M 2SA1356 , 435/G 2SB439 2SB440 2SB461 2SB462 2SB463 2SB464 2SA1302 2SA1049 2SA 562T M 2SA1301 2SA1048 2SB834


OCR Scan
PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SC2461 B 2SD1365 2sk30 1265N C366G MG15G1AL2 b1375 2SC102
C3182N

Abstract: C3888A 2sd 3420 2SC2268 EP 1408 3884A 2sc2073-2 3182N 2SD 388A 2SA855
Text: 2SA 1358 2SA 1358 2SB834 , 2SB I375 2SB596 2S B 8 Î4 , 2SB1375 2SB596_ 1256 T y p e Na , 2SB20I 2SB202 R eco m m en d R eplacem ent T y p e Na 2SB834 2S B I375 2SB834 2S B I375 2 S A I0 1 5 2 S A 562T M 2 S A I0 1 5 2 S A I0 I5 2 S A IO I5 2 S A 1015 - 2 S A 1015 2SA 1015 2SB834 2S B I375 2SB834 2 S B I3 7 5 2SB686 2SB686 T y p e Na 2SB235 2SB236 2SB237 2SB257 2SB258 2SB259 2SB 260 2SB265 , 950 2SA 817 2 S A 1 0 I5 2 S A IO I5 2SB834 2SB1375 2SB596 2SB1375 2SB834 2S B I375 2SB596 2 S B I375


OCR Scan
PDF 2SA51 2SA57 2SC3281 2SD1571 C3182N C3888A 2sd 3420 2SC2268 EP 1408 3884A 2sc2073-2 3182N 2SD 388A 2SA855
2004 - Not Available

Abstract: No abstract text available
Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-126 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL , 60-120 Y 100-200 GR 150-300 UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-018,A UTC 2SB834 , 2SB834 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that


Original
PDF 2SB834 O-126 QW-R205-018
2004 - Not Available

Abstract: No abstract text available
Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL RATING , 60-120 Y 100-200 GR 150-300 UNISONIC TECHNOLOGIES CO. LTD 1 QW-R203-014,A UTC 2SB834 , 2SB834 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that


Original
PDF 2SB834 O-220 QW-R203-014
2013 - Not Available

Abstract: No abstract text available
Text: Free Halogen Free 2SB834L-x-AB3-R 2SB834G-x-AB3-R 2SB834L-x-T60-K 2SB834G-x-T60-K 2SB834L-x-TA3-T 2SB834G-x-TA3-T 2SB834L-x-TF3-T 2SB834G-x-TF3-T www.unisonic.com.tw Copyright © 2013 Unisonic , UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ï , B C E B C E Packing Tape Reel Bulk Tube Tube 1 of 4 QW-R204-018.E 2SB834 ï , GR 150-300 2 of 4 QW-R204-018.E 2SB834 TYPICAL CHARACTERISTICS Collector Current vs


Original
PDF 2SB834 2SB834L-x-AB3-R 2SB834G-x-AB3-R 2SB834L-x-T60-K 2SB834G-x-T60-K 2SB834L-x-TA3-T 2SB834G-x-TA3-T 2SB834L-x-TF3-T 2SB834G-x-TF3-T OT-89
2006 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR (PNP) TO—220 1. BASE FEATURES Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A DC current Gain hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol , 2SB834 A,Mar,2011 Jiangsu Changjiang Electronics Technology


Original
PDF O-220 2SB834 2SD880 -500mA -500mA,
2014 - utc 2sb834L

Abstract: No abstract text available
Text: Package Lead Free Halogen Free SOT-89 2SB834L-x-AB3-R 2SB834G-x-AB3-R 2SB834L-x-T60-K 2SB834G-x-T60-K TO-126 2SB834L-x-TA3-T 2SB834G-x-TA3-T TO-220 2SB834L-x-TF3-T 2SB834G-x-TF3-T TO-220F 2SB834L-x-TN3-R 2SB834G-x-TN3-R TO-252 Note: Pin Assignment: B: Base C: Collector E: Emitter www.unisonic.com.tw , UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ï , E B C E Packing Tape Reel Bulk Tube Tube Tape Reel 1 of 5 QW-R204-018.F 2SB834 ï


Original
PDF 2SB834 OT-89 2SB834L-x-AB3-R 2SB834G-x-AB3-R 2SB834L-x-T60-K 2SB834G-x-T60-K O-126 2SB834L-x-TA3-T 2SB834G-x-TA3-T O-220 utc 2sb834L
2005 - UTC2SB834

Abstract: No abstract text available
Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM , -014,B UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Ic-Vce POWER , UNISONIC TECHNOLOGIES CO. LTD 2 QW-R203-014,B UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R203-014,B UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR UTC


Original
PDF 2SB834 O-220 QW-R203-014 UTC2SB834
2006 - 2SB834

Abstract: 2sb834 transistor 2SD880 2sD880 TRANSISTOR
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR (PNP) TO-220 1. BASE FEATURES Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A DC current Gain hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol , . CLASSIFICATION OF Rank Range hFE(1) O Y 60-120 100-200 Typical Characteristics 2SB834


Original
PDF O-220 2SB834 O--220 2SD880 -500mA -500mA, 2SB834 2sb834 transistor 2SD880 2sD880 TRANSISTOR
2sb834 transistor

Abstract: 2SB834
Text: 2SB834 2SB834 TRANSISTOR (PNP) TO-220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 1.5 W (Tamb=25) 3. EMITTER Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE=0 -60


Original
PDF 2SB834 O-220 -50mA, -500mA 2sb834 transistor 2SB834
Supplyframe Tracking Pixel