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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

2sa1930 transistor equivalent Datasheets Context Search

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2SA1930

Abstract: 2SC5171 VQE 11E 2SA19 transistor 2SA1930
Text: TOSHIBA TO S H IB A TRANSISTOR 2SA1930 POWER AM PLIFIER APPLICATIO NS 2SA1930 SYMBOL v CBO v CEO Ve b o ic :B pc Tj Tstg SILICON PNP E PITAX IAL TYPE Unit in mm r 10 ±0.3 -5 y < 0 ± 0.2 of 3.9 0.3 2.7±Q 2 DRIVER STAGE AM PLIFIER APPLICATIO NS · · High Transition , 1/3 TOSHIBA 2SA1930 - 2.0 IC - VCE / i . > '- 3 0 0 / > ^ -2 0 0 100 -5 0 -4 0 -3 0 , 2SA1930 rth - tw PULSE WIDTH tw (s) 2 00 0 - 10-27 3/3


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PDF 2SA1930 2SC5171 2SA1930 2SC5171 VQE 11E 2SA19 transistor 2SA1930
2sa1930

Abstract: 2SA1930 2sc5171 2SC5171
Text: TOSHIBA TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SA1930 2SA1930 SYMBOL v CBO v CEO Ve b o RATING -180 -180 -5 -2 SILICON PNP EPITAXIAL TYPE Unit in mm r DRIVER STAGE AMPLIFIER APPLICATIONS · · High Transition Frequency : fp = 200MHz (Typ.) Complementary to 2SC5171 1.1 2 '^ " 0 O cn CO o M A X IM U M RATINGS (Ta = 25°C) 1.1 UNIT V V V A i ic -1 A , 1997 - 02-03 1/2 TOSHIBA 2SA1930


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PDF 2SA1930 200MHz 2SC5171 2-10R1A -180V 2sa1930 2SA1930 2sc5171 2SC5171
2007 - A1930

Abstract: transistor a1930 2SA1930 2SA1930 2sc5171 toshiba A1930 transistor 2SA1930
Text: 2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications , , etc). 1 2007-06-15 2SA1930 Electrical Characteristics (Tc = 25°C) Characteristics , )-free finish. 2 2007-06-15 2SA1930 IC ­ VCE -2.0 -300 -1.6 -200 -100 -50 -40 -30 -20 -10 , 2SA1930 rth ­ tw 100 Curves should be applied in thermal limited area. (single non-repetitive pulse , 0.1 1 10 100 1000 Pulse width tw (s) 4 2007-06-15 2SA1930


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PDF 2SA1930 2SC5171 SC-67 2-10R1A A1930 transistor a1930 2SA1930 2SA1930 2sc5171 toshiba A1930 transistor 2SA1930
Not Available

Abstract: No abstract text available
Text: , Line. J.E.IIS.U C7 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1930 Silicon PNP Power Transistor DESCRIPTION • High Transition Frenquency : fr=200MHz(Typ.) • Complementary to 2SC5171 1 PIN 1.BASE 2.COLLECTOR 3. EMITTER APPLICATIONS 1 2 3 TO-220F package • Power amplifier , Silicon PNP Power Transistor 2SA1930 ELECTRICAL CHARACTERISTICS Tc~25'C unless otherwise specified


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PDF 2SA1930 200MHz 2SC5171 O-220F -10mA
2SA1930 2sc5171

Abstract: 2SA1930 2SC5171
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2SA1930 2SA1930 POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS r 10 ±0.3 -y5 < ± 0.2 of 3.9 0.3 . . 2.7±Q 2 Unit in , 1 MHz - 0 .6 8 - 1 .5 200 - 26 - 2 001 10-29 - TO SH IBA 2SA1930 IC - VCE - , (V) * COLLECTOR-EMITTER VOLTAGE 2 2 001 10-29 - TO SH IBA 2SA1930 rth - tw PULSE WIDTH tw (s) 3 2001 10-29 - TO SH IBA 2SA1930 RESTRICTIONS ON PRODUCT USE


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PDF 2SA1930 2SC5171 2SA1930 2sc5171 2SA1930 2SC5171
2007 - A1930

Abstract: transistor a1930 2SA1930 2sa1930 transistor equivalent toshiba A1930 2SA1930 2sc5171 2SC5171
Text: 2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications , report and estimated failure rate, etc). 1 2007-06-15 2SA1930 Electrical Characteristics (Tc , or lead (Pb)-free finish. 2 2007-06-15 2SA1930 IC ­ VCE IC ­ VBE -2.0 -100 , voltage 3 -300 -1000 VCE (V) 2007-06-15 2SA1930 rth ­ tw 100 Transient thermal , tw 100 1000 (s) 2007-06-15 2SA1930 RESTRICTIONS ON PRODUCT USE 20070701-EN ·


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PDF 2SA1930 2SC5171 SC-67 2-10R1A A1930 transistor a1930 2SA1930 2sa1930 transistor equivalent toshiba A1930 2SA1930 2sc5171 2SC5171
2SA1930

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SA1930 PO W ER AM PLIFIER APPLICATIONS 2 SA 1 9 3 Q SILICON PNP EPITAXIAL TYPE Unit in mm 10 + 0.3 , f 3.2 ±0.2 2.7±02 DRIVER STAGE AM PLIFIER APPLICATIONS · · High Transition Frequency : fr = 200MHz (Typ.) P íim n lp tr iíin f a rv tn 9 R n ? i1 7 t M A X IM U M RATINGS (Ta = 25°C) 1.1 JEDEC EIAJ TOSHIBA 2-10R1A Weight : 1.7g(Typ , COLLECTOR CURRENT I q (A) H I i-i O (£> (£> i 0 N i 1 O U J IS J n tr 2SA1930 5


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PDF 2SA1930 200MHz 2-10R1A -180V --10mA. 2SA1930
Not Available

Abstract: No abstract text available
Text: 2SA1930 T O SH IB A 2 S A 1 930 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ± 0 .3 — 1X' Î.2 ± 0.2 fi • • High Transition Frequency : Pp = 200MHz (Typ.) Complementary to 2SC5171 MAXIMUM RATINGS (Ta = 25°C) O O 2.710.2 © Oi ro 1.1 UNIT V V V ; I mi , O o <3 W H < CO K) 2SA1930 ro O > w > M M § H M S*J


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PDF 2SA1930 200MHz 2SC5171 2-10R1A -180V
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR WÊÊÊF 2SC5171 1 <;r s 1 7 1 MT M SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 10 + 0.3 , Unit in mm f 3.2 ± 0 . 2 2.7±02 · · High Transition Frequency : fr = 200MHz (Typ.) Complementary to 2SA1930 1.1 MAXIMUM RATINGS (Ta = 25°C) JEDEC EIAJ TOSHIBA 2-10R1A Weight : 1.7g (Typ.) ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL TEST CONDITION CHARACTERISTIC MIN. TYP. MAX. IJNTT Collector Cut-off Current VC b =


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PDF 2SC5171 200MHz 2SA1930 2-10R1A
2SA1930 2sc5171

Abstract: 2SC5171 transistor 2sc5171 2SA1930
Text: TO SH IBA TOSHIBA TRANSISTOR 2SC5171 POWER AMPLIFIER APPLICATIONS 2SC5171 SILICON NPN EPITAXIAL TYPE Unit in mm r DRIVER STAGE AMPLIFIER APPLICATIONS 10 ±0.3 o ^3.2 ± 0.2 OO cn ro 2.7±Q 2 · · High Transition Frequency : fr[' = 200MHz (Typ.) Complementary to 2SA1930 1.1 0 MAXIMUM RATINGS (Tc = 25°C) 1.1 UNIT 0.75 ±0.15 V 2.54 ± 0.25 2.54±0.25 V 1 2 3 V A [ [° _ ^ A 1. BASE W 2. COLLECTOR 3. EMITTER °C °C JEDEC JEITA TOSHIBA 2-10R1A ELECTRICAL CHARACTERISTICS (Tc = 25


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PDF 2SC5171 200MHz 2SA1930 2-10R1A --180V, 2SA1930 2sc5171 2SC5171 transistor 2sc5171 2SA1930
2SA1930 2sc5171

Abstract: transistor 2sc5171 2SC5171 2SA1930
Text: TOSHIBA TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SC5171 2SC5171 SILICON NPN EPITAXIAL TYPE Unit in mm r DRIVER STAGE AMPLIFIER APPLICATIONS · · High Transition Frequency : fp = 200MHz (Typ.) Complementary to 2SA1930 1.1 2 '^ " 0 o O cn CO M A X IM U M RATINGS (Ta = 25°C) 1.1 UNIT V V V A i ic A lB 1. BASE W PC 2. COLLECTOR 3. EMITTER °C Tj °C JEDEC Tstg EIAJ TOSHIBA 2-10R1A Weight : 1.7g(Typ.) ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL TEST CONDITION


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PDF 2SC5171 200MHz 2SA1930 2-10R1A 2SA1930 2sc5171 transistor 2sc5171 2SC5171 2SA1930
2SA1930 2sc5171

Abstract: 2SC5171 2SA1930
Text: TO SH IBA TOSHIBA TRANSISTOR 2SC5171 POWER AMPLIFIER APPLICATIONS 2SC5171 SILICON NPN EPITAXIAL TYPE Unit in mm r DRIVER STAGE AMPLIFIER APPLICATIONS 10 ±0.3 0 o ^3.2 ± 0.2 CO 2.7±Q 2 · · High Transition Frequency : fr[' = 200MHz (Typ.) Complementary to 2SA1930 1.1 cn ro MAXIMUM RATINGS (Ta = 25°C) 1.1 UNIT 0.75 ±0.15 V 2.54 ± 0.25 2.54±0.25 V V A 1 2 3 ic A :B 1. BASE W PC 2. COLLECTOR 3. EMITTER °C Tj °C JEDEC Tstg EIAJ TOSHIBA 2-10R1A ELECTRICAL


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PDF 2SC5171 200MHz 2SA1930 2-10R1A --180V, 2SA1930 2sc5171 2SC5171 2SA1930
2004 - c5171

Abstract: transistor c5171 2SC5171 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 transistor equivalent 2SA1930
Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications · High transition frequency: fT = 200 MHz (typ.) · Unit: mm Complementary to 2SA1930 Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 180 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 1 A


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PDF 2SC5171 2SA1930 2-10R1A c5171 transistor c5171 2SC5171 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 transistor equivalent 2SA1930
2007 - transistor c5171

Abstract: C5171 2SC5171 transistor equivalent 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 2SA1930 2sc517
Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications · High transition frequency: fT = 200 MHz (typ.) · Unit: mm Complementary to 2SA1930 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 180 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current


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PDF 2SC5171 2SA1930 2-10R1A transistor c5171 C5171 2SC5171 transistor equivalent 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 2SA1930 2sc517
2004 - 2sc5171

Abstract: No abstract text available
Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz (typ.) • Unit: mm Complementary to 2SA1930 Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 180 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current


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PDF 2SC5171 2SA1930 2-10R1A 2sc5171
2006 - transistor c5171

Abstract: c5171 2sc5171
Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm · · High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 180


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PDF 2SC5171 2SA1930 2-10R1A transistor c5171 c5171 2sc5171
Not Available

Abstract: No abstract text available
Text: 2SC5171 T O SH IB A TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2 S C 5 1 71 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ± 0 .3 — 1X' Î.2 ± 0.2 fi • • High Transition Frequency : Pp = 200MHz (Typ.) Complementary to 2SA1930 MAXIMUM RATINGS (Ta = 25°C) O O 2.710.2 © Oi ro 1.1 UNIT V V V ; I mi nn irn \ A ic I1 2 3\ "1 * A !b 1. BASE W PC 2. COLLECTOR 3. EMITTER °C Tj °C JEDEC Tstg


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PDF 2SC5171 200MHz 2SA1930 2-10R1A
2sc5088 horizontal transistors

Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Text: technical datasheets. Transistor Product List Power transistors for audio power amplifiers Package , package. These types of transistor are suitable for low-output AC adapters and ballast lamp applications. Package List Package List Package List Power transistor SMD Series Power transistors in SMD packages , Selection Guide by Function and Application Transistor Product List Package Line ups Transistor , 2SA1837 2SA1932 1 2SA1930 2SC4793 2SC5174 2SA1822 2SC5930 (285V) 2SC5549 2SC5550


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PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 T15J103 02SC5030 Driver IC 2SC3346
Text: L -S T M (T 0 -9 2 M 0 D )T Y P E POWER TRANSISTOR V 'CEO \(V> 10 30 40 50 60 80 , - I 26 (IS ),N P M , POWER MOLD, TPS TYPE TRANSISTOR 'V 'C EO \(V ) IC (A )\ 0.05 2SC3423 2SA1360 , TYPE POWER TRANSISTOR V cE O \(V ) IC (A )\ 0.05 0.15 0.3 0.5 1.0 2SC2073 2SA940 C29C3296 2SA1304 , TRANSISTOR VCEO \v ) Id A) \ 30 40 60 80 100 200 250 300 400 450 A 2SD1508 , T O -3P IN ) © T O -3P(L ) TRANSISTOR LINE UP FOR AUDIO POWER AMPLIFIER \s T A G E *0 O


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PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 T15J103 02SC5030 Driver IC 2SC3346
smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Text: .to shib a .co.jp /en g Power Transistors for Switching Power Supplies Low VCE(sat) Transistor , power transistors in a low-profile package. These types of transistor are suitable for low-output AC , and transistors with SBDs and S-MOSes are also available. Power Transistor With smaller and , Transistor SMD Series ····4 ·········7 Audio Power Amplifiers · · · · · · · · · · · · · · · · · · · · · , 4 LSTM TO-3P(N) VS-6 Transistor + S-MOS MSTM TO-3P(N)IS PS-8 TO-126 TO-220NIS TO


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PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent 2SC5386 equivalent equivalent 2SC5200 2Sc5588 equivalent
Text: Transistors for Displays z 230 General-Purpose Power MOSFETs z 232 Power Transistor & Power MOSFET Modules z , 2SA1930 2SC5171 (180V) (S) () (@) () () () () (@) () () (S) () (@) () () ({) () () () () (S) (S , 2SA1930 2SA1939 2SA1940 2SA1941 2SB1557 2SB1558 2SA1803 2SA1804 2SA1805 2SA1962 2SA1986 2SA1942 2SA1943 , type Darlington type High Complementary Pair Equivalent Product Remarks 2SA1225 2SC2983 2SA1241 , XN PNP B D F H R N T I W LA LB LC LD 4E 4D 4F 4G TO-92MOD Equivalent (TO-92) NPN 2SC2229


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PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent 2SC5386 equivalent equivalent 2SC5200 2Sc5588 equivalent
2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sc5200 2sC5200 2SA1943 2SC4793 2sa1837 TTC003 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Text: Transistor SMD PW-MiniPW-MoldTO-220 SM TSMVS-6PS-8SMV TO-126 TO , 2SA1932 2SA2182 2SC4793 2SC5174 2SC6060 1 92 2SA1930 2 2SC5930 (285 V) 2SC6010 (285 , 2SC4793 2SA1837 2SC5171 2SA1930 2SC6060 2SA2182 2SC6072 TO-3P(N) TO , 1.0 0.5 5m 17 5 0.5 ­ ­ ­ 2SC5171 2SA1930 180 20 100~320


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PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sc5200 2sC5200 2SA1943 2SC4793 2sa1837 TTC003 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a GT45F122 gt30g124 smd marking 8L01 tk25e06k3 GT30F123
Text: ) + small-signal diode Q1 R1 General-purpose NPN transistor VR HN2E02F Independent , diode + NPN RN1303 Q2 R1 VCEO 50 General-purpose NPN transistor HN2E05J


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PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a GT45F122 gt30g124 smd marking 8L01 tk25e06k3 GT30F123
GT30J124

Abstract: gt45f122 smd transistor h2a TPCP8R01 GT30F123 smd marking 8L01 2sc1815 smd type h2a smd 2sc5200 amplifiers circuit diagram 2SC5471
Text: , R2 = 10 k Q1 2SC4116 VCEO 50 IC 150 General-purpose NPN transistor Q2 RN1303 , General-purpose NPN transistor Q1 2SA1587 VCEO -120 IC -100 High breakdown voltage PNP Q2


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PDF SCE0004I SC-43) 2SC1815 GT30J124 gt45f122 smd transistor h2a TPCP8R01 GT30F123 smd marking 8L01 2sc1815 smd type h2a smd 2sc5200 amplifiers circuit diagram 2SC5471
transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 GT45F123 MARKING SMD PNP TRANSISTOR h2a gt35j321 GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors Small-Signal FETs Combination Products of Different Type Devices Bipolar Power Transistors Power MOSFETs Power Transistor Modules Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors IGBTs Phototransistors (for Optical Sensors) 190 205 215 217 232 242 243 246 247 247 248 250 189 Bipolar Small-Signal Transistors General-Purpose


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PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 GT45F123 MARKING SMD PNP TRANSISTOR h2a gt35j321 GT45F122 GT45f122 Series gt30f122
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