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2sa1016 datasheet (41)

Part Manufacturer Description Type PDF
2SA1016 Sanyo Semiconductor High-voltage, low-noise amplifier Original PDF
2SA1016 Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Original PDF
2SA1016 Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1016 Others Shortform Transistor PDF Datasheet Scan PDF
2SA1016 Others Japanese Transistor Cross References (2S) Scan PDF
2SA1016 Others Cross Reference Datasheet Scan PDF
2SA1016 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SA1016 Others The Transistor Manual (Japanese) 1993 Scan PDF
2SA1016 Others Transistor Substitution Data Book 1993 Scan PDF
2SA1016 Others The Japanese Transistor Manual 1981 Scan PDF
2SA1016 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2SA1016 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
2SA1016 Sanyo Semiconductor PNP/NPN Epitaxial Planar Type Transistor Scan PDF
2SA1016-F Sanyo Semiconductor TRANS GP BJT PNP 100V 0.05A 3NP Original PDF
2SA1016F Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1016F Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistor Scan PDF
2SA1016-G Sanyo Semiconductor TRANS GP BJT PNP 100V 0.05A 3NP Original PDF
2SA1016G Others Transistor Shortform Datasheet & Cross References Scan PDF
2SA1016G Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistor Scan PDF
2SA1016-H Sanyo Semiconductor TRANS GP BJT PNP 100V 0.05A 3NP Original PDF

2sa1016 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - 2sc2362

Abstract: 2SA1016 2SA1016K 2SC2362K d 05724 2SC2362K – G Rank
Text: Conditions 2SA1016 , 2SC2362 VCBO VCEO 2SA1016K , 2SC2362K VEBO Collector Current (-)120 , =(-)10A, IE=0A [ 2SA1016K , 2SC2362K] (-)150 V IC=(-)1mA, RBE= [ 2SA1016 , 2SC2362] (-)100 , Ordering number : EN0572F 2SA1016 , 1016K / 2SC2362, 2362K SANYO Semiconductors DATA SHEET 2SA1016 , 1016K 2SC2362, 2362K PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp Applications Specifications ( ) : 2SA1016 , 1016K Absolute Maximum Ratings at Ta


Original
PDF EN0572F 2SA1016, 1016K 2SC2362, 2362K 1016K 2sc2362 2SA1016 2SA1016K 2SC2362K d 05724 2SC2362K – G Rank
2SA1016

Abstract: 2SC2362 2SA1016K 2362K 2SC2362K 1016K SC22-3 6D8B
Text: No. N 0 5 7 2 F 2SA1016 ,1016K / 2SC2362,2362K No.N572D 2SA1016 , 1016K 2SC2362, 2362K PNP / NPN 2SA1016 ,1016K Absolute Maximum Ratings / Ta=25 VCBO VCEO VEBO IC ICP PC Tj Tstg 2SA1016 , 2SC2362 (-)120 (-)100 2SA1016K , 2SC2362K (-)150 (-)120 , =0A[ 2SA1016K , 2SC2362K] (-)150 V IC=(-)1mA, RBE=[ 2SA1016 , 2SC2362] (-)100 V IC=(-)1mA, RBE=[ 2SA1016K , 2SC2362K] (-)120 V IE=(-)10A, IC =0A (-)5 V : 2SA1016 , 1016K, 2SC2362, 2362K 1mA hFE


Original
PDF 2SA1016 1016K 2SC2362 2362K N572D 2SA1016, 1016K 2SC2362, 2SA1016K 2362K 2SC2362K SC22-3 6D8B
2002 - a1016

Abstract: 2SA1016 C2362 2SC2362 2SC2362K 2SA1016K ENN572E 1016k
Text: VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage 2SA1016K , 2SC2362K 2SA1016 , Ordering number:ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016 , 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit:mm 2003B [ 2SA1016 , 1016K , : Emitter 2 : Collecor 3 : Base SANYO : NP ( ) : 2SA1016 , 1016K Specifications 1.3 1.3 , =1MHz * : The 2SA1016 , K/2SC2362, K are classified by 1mA hFE as follows : Rank F G 160 to 320 280


Original
PDF ENN572E 2SA1016, 1016K/2SC2362, 2362K 2003B 2362K] 1016K a1016 2SA1016 C2362 2SC2362 2SC2362K 2SA1016K ENN572E 1016k
1998 - A1016

Abstract: C2362 A1016K 2SA1016 2SC2362 C2362K 2SC2362K 2SA1016K 2362K
Text: 2SA1016K , 2SC2362K 2SA1016 , 2SC2362 Unit (­)120 (­)150 V (­)100 (­)120 V VEBO , Ordering number:EN572D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016 , 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit:mm 2003A [ 2SA1016 , 1016K/2SC2362, 2362K] JEDEC : TO-92 EIAJ : SC-43 SANYO : NP ( ) : 2SA1016 , 1016K Specifications B , VNO(peak) VCC=30V, IC=1mA, Rg=56k, VG=77dB/1kHz V 35 mV 200 mV * : The 2SA1016 , K


Original
PDF EN572D 2SA1016, 1016K/2SC2362, 2362K 2362K] SC-43 1016K A1016 C2362 A1016K 2SA1016 2SC2362 C2362K 2SC2362K 2SA1016K 2362K
a1016

Abstract: 2SA2362 2SA1016 2SC236 C2362 2SA23 2SC2362 A1016K 2362K 572D
Text: Ordering number: EN 572D No.572D J 2SA1016 ,1016K/2SC2362,2362K PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp Applications ( ) : 2SA1016 ,1016K Absolute Maximum , Temperature Tj Storage Temperature Tstg 2SAIO16,2SC2 362 2SA1016K ,2SC2362K unit (-)120 (-)100 (-)150 V , =30V/Ic=lmA,Rg=56kn i VG=77dB/lkHz vNOfc>eak) * The 2SA1016 ,K / 2SC2362,K are classified by 1mA hFE as , 3187AT/3075KI/1313KI No.572-1/4 2SA1016 , 1016K/2SC2362, 2362K -12 c-10 I u *i C Q) M c M "6 M O


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PDF 2SA1016 1016K/2SC2362 2362K 1016K 2SAIO16 2SA1016K 2SC2362K a1016 2SA2362 2SC236 C2362 2SA23 2SC2362 A1016K 2362K 572D
transistor c2362

Abstract: 2SC2362 A1016 2SA2362 2SA1016 C2362 2SA1016K 2SA23 2sc2362 TRANSISTOR 572D
Text: Voltage CBO ÏEBO hFE fT Cob 2SA1016 ,2SC2362 2SA1016K ,2SC2362K unit (-)120 (-)100 -■-C Icp Pc Tj , Ordering number: EN 572D SA \ YO No.572D 2SA1016 ,1016K/2SC2362,2362K PNP/ NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp _ Applications ( ): 2SA1016 ,1016K Absolute , = 1mA, Rg=56kfl i VG=77dB/lkHz vNOfc>eak) * The 2SA1016 ,K / 2SC2362,K are classified by 1mA hpg; as , .572-1/4 7^7071^ GGlSbGl 637 133 2SA1016 ,1016K/2SC2362,2362K in - VCE 0 -10 -20 -30 -40 -50 Collector


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PDF 2SA1016 1016K/2SC2362 2362K 1016K 2SC2362 2SA1016K 2SC2362K 2034/2034A transistor c2362 A1016 2SA2362 C2362 2SA23 2sc2362 TRANSISTOR 572D
2SA1015

Abstract: 2sa798 2SA1207 NEC k 787 2SB631 2SA836 2sb631 hitachi 2sa733 2SA785 2SA1016
Text: - 14 - S € Type No. tt S Manuf. SANYO K 3E TOSHIBA B m NEC B iL HITACHI « ± 3 FUJITSU fâ T MATSUSHITA = m MITSUBISHI □ - A ROHM 2SA 780Ä (K)■— a i 2SB631 2SA743 2SA699A 2SB1064 25A 781 (K) . 0 4 2SA1339 2SA1015 2SA 782- □ —A 2SA1016 2SA1015 2SA675 2SA836 2SA1309A 2SA785 2SA , 2SA1309A 2SA937 2SA 785 □—A 2SA1016 2SA1015 2SA675 2SA836 2SA1309A 2SA999 2SA 786 □ —A 2SA930 , 796 SrBfc 2SA1015 2SA 797 = m 2SA1016 2SA 798 - H s 2SA1015 2SA 802 □ —A


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PDF 2SB631 2SA743 2SA699A 2SB1064 2SA1339 2SA1015 2SA1016 2SA1015 2SA675 2SA836 2sa798 2SA1207 NEC k 787 2SB631 2SA836 2sb631 hitachi 2sa733 2SA785
2SA1016

Abstract: No abstract text available
Text: ST 2SA1016 PNP Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25) Symbol Value Unit Collector Base Voltage -VCBO 120 V Collector Emitter Voltage -VCEO 100 V Emitter Base , Stock Exchange, Stock Code: 724) R Dated : 17/5/2004 ST 2SA1016 Characteristics at Tamb=25 OC


Original
PDF 2SA1016 77dB/1kHz 2SA1016
2SA1281

Abstract: 2SB927 2SB873 2SA1115 2SA1266 2SA817A 2SA1255 2SA1263n 2SA1227 1265
Text: SA 1268 «bsi 2SA1016 2SA970 2SA992 2SA1191 2SA1123 2SA847A 2SA1038 2SA 1269 2SA1016 2SA1049


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PDF 2SA1048 2SB774 2SA933S 2SA1162 2SA1257 2SA1330 2SB792 2SA1226 2SA1022 2SA1733K 2SA1281 2SB927 2SB873 2SA1115 2SA1266 2SA817A 2SA1255 2SA1263n 2SA1227 1265
2sa1016 equivalent

Abstract: 2SA1016
Text: ST 2SA1016 PNP Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25) Symbol Value Unit Collector Base Voltage -VCBO 120 V Collector Emitter Voltage -VCEO 100 V Emitter Base , ) ® Dated : 17/5/2004 ST 2SA1016 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit


Original
PDF 2SA1016 77dB/1kHz 2sa1016 equivalent 2SA1016
2SB737

Abstract: 2SA1038 2sa1015 2SB873 2SA847 2SA999 2SA1104 2SA933S 2SA1232 2SA1015 ba
Text: 2SB725 2SA999 2SA1038 2SA 1084 , 0 ÍL 2SA1016 2SA970 2SA992 2SB726 2SA847A 2SA1038 2SA 1085 - 0 it 2SA1016 2SA970 2SA992 2SA921 2SA847A 2SA1038 2SA 1090 ' IC £ 2SA1636 2SA 1091 - S: s


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PDF 2SB922 2SA1302 2SB946 2SB920 2SA968 2SA985 2SB940 2SB1085 2SA985A 2SB1085A 2SB737 2SA1038 2sa1015 2SB873 2SA847 2SA999 2SA1104 2SA933S 2SA1232 2SA1015 ba
2SA1015

Abstract: 2SA1091 2SB814 2SB548 2SA562TM 2SA1371 2SB642 2SB793 2SA1243 2SA1306A
Text: 2SA904A 2SA 1555 □ —A 2SB1235 2SA 1556 □ —A 2SA1016 2SA1091 2SB788 2SA904A 2SA 155? □ —A 2SA1016 2 SA 10 91 2SA 1558 D-A 23A1624 2SA1091 2SB1264 2SA 1 559 • â


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PDF 2SB1037 2SB649A 2SB1186A 2SA1306A 2SB1186B 2SB548 2SB1314 2SA1783 2SA1015 2SA733 2SA1091 2SB814 2SB548 2SA562TM 2SA1371 2SB642 2SB793 2SA1243 2SA1306A
2SA1016

Abstract: No abstract text available
Text: ST 2SA1016 PNP Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25) Symbol Value Unit Collector Base Voltage -VCBO 120 V Collector Emitter Voltage -VCEO 100 V Emitter Base , ) R Dated : 17/5/2004 ST 2SA1016 Characteristics at Tamb=25 OC Symbol Min. Typ. Max


Original
PDF 2SA1016 77dB/1kHz 2SA1016
2SA1016

Abstract: No abstract text available
Text: ST 2SA1016 PNP Silicon Epitaxial Planar Transistor High -Voltage Low-Noise Amp applications The transistor is subdivided into three groups F, G and H, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25) Symbol Value Unit Collector Base Voltage -VCBO 120 V Collector Emitter Voltage -VCEO 100 V Emitter Base , Kong Stock Exchange, Stock Code: 724) Dated : 17/5/2004 ST 2SA1016 Characteristics at Tamb=25 OC


Original
PDF 2SA1016 77dB/1kHz 2SA1016
2SA1301 TOSHIBA

Abstract: da 1191 2sa970 2SA904A Toshiba 2SB754 2Sa1173 2SB646 2SA1323 2SA1038 2SA1782
Text: 2SA1207 2SA970 2SA988 2SA921 2SA904A 2SA1038 2SA 1190 . B ÍL 2SA1016 2SA970 2SA992 2SA921 2SA847A 2SA1038 2 SA 1191 „ 0 iL 2SA1016 2SA970 2SA992 2SA921 2SA847A 2SA1038 2SA 1193(10' 0 iL 2SB865


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PDF 2SA1415 2SA1782 2SA1048 2SA1127 SA1299 2SA933S 2SA104S 2SA1337 SA112 2SA1301 TOSHIBA da 1191 2sa970 2SA904A Toshiba 2SB754 2Sa1173 2SB646 2SA1323 2SA1038
Not Available

Abstract: No abstract text available
Text: Ordering num ber:EN 572D SA\YO No.572D 2SA1016 ,1016K/2SC2362,2362K PNP/ NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp _Applications ( ) : 2 S A 1 0 1 6 ,1 0 1 6 K 2 S A 1 0 1 6 ,2 S C 2 362 2 S A 1 0 1 6 K ,2 S C 2 3 6 2 K u n i t (- , T /3 0 7 5 K I/1 3 1 3 K I N o .5 7 2 - 1 /4 i J 133 2SA1016 ,1016K/2SC2362,2362K IR - , 75 A m biem t T e m p e ra tu re 25 2SA1016 ,1016K/2SC2362,2362K - j 3-0.1 * 3 0 _li0 c


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PDF 2SA1016 1016K/2SC2362 2362K
2SB817

Abstract: 2sa1115 2SA992 2sa1015 2sa1302 2SA1782 2SA847A 2SA1123 2SA1142 sanyo 1042
Text: - 21 - SJ € Type No. tt « Manuf. = m SANYO 3E 2 TOSHIBA 0 a NEC B 4 HITACHI * ± a FUJITSU 2SA1016K 2SA970 2SA992 2SA1123 2SA847A 2SA 1039 □ —A 2SA1016 2SA970 2SA992 2SA1123 2SA847A 2SA 1040 , *±a 2SB817 2SA 1041 *±a 2SB817 2SA 1042 2SB817 2SA 1045 j. *±a 2SB917 2SA 1046 ^ «±¡1 2SB915 2SA 1 047 H n 2SA949 2SA1142 2SB717 2SA914 2SA 1 048 n 2 2SA178Z 2SA1175 2SA1374


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PDF 2SA1016K 2SA970 2SA992 2SA1123 2SA847A 2SA1016 2SB817 2sa1115 2SA992 2sa1015 2sa1302 2SA1782 2SA847A 2SA1142 sanyo 1042
2SA970

Abstract: 2SB927 2SA101S 2sa977 2SA933LN 2SA1783 2SA914 2SA562TM 2SA1015 Toshiba 2SB754
Text: 2SA 1138 - s a 2SA1016 2SA1123 2SA1482 2SA 1138-1 B a 2SA1482 2SA 1141 " B m (2SB776 , 2SA1284 2SA935 2SA 1155 - m 2SA1239 2SA 1156 — b a 2SA1772 2SA1775 2 SA 1158 2SA1016K


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PDF 2SA1208 2SA1320 2SA1482 2SA1360 2SA914 2SA1783 2SA101S 2SA933LN 2SB698 2SA562TM 2SA970 2SB927 2SA101S 2sa977 2SA933LN 2SA914 2SA562TM 2SA1015 Toshiba 2SB754
2SA1015

Abstract: 2SA733 2SA847A 2SA823 2SA933 2SA817 2SA968 2SA935 2SA1284 2SA970
Text: 2SA 824 □ —A 2SA1177 2SA1015 2SA987 2SA1029 2SA1309A 2SA933 2SA 825 - □ —A 2SA1016 2SA970


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PDF 2SA1358 2SA985 2SB647 2SA794 2SB1085 2SA984 2SA817 2SA777 2SA1284 2SA1015 2SA733 2SA847A 2SA823 2SA933 2SA817 2SA968 2SA935 2SA970
2sa10

Abstract: 2SA1015L 2SC1815L 2SA1012 2SA1035 2SA1015 2SA1016 2SA1016K 2SA1020 2SA1022
Text: -50 -50 -0. 15 0. 4 -0. 1 -50 70 400 -6 -0.002 -0. 3 -1.1 -0.1 -0.01 2SA1016 Hff HV LN A -120 -100 -0.05 0. 4 -1 -80 160 960 -6 -0. 001 -0. 5 -0.01 -0.001 2SA1016K Hff HV LN A -150 -120 -0.05 0.4 -1 , =77dB Rg=56K 2SC2362 TO-92® ECB 2SA1016 110* -6 -0. 001 2. 2* Vno max 35mV Gv=77dB Rg=56K 2SC2362K TO-92® ECB 2SA1016K 50 -10 -0.01 10 2SC1473 TO-92® ECB 2SA1018 100* -2 -0.5 0.1* 0.1* 1* 40* 1


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PDF Ta-25iC) SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1041 2SA1042 2SA1043 2sa10 2SA1015L 2SC1815L 2SA1035 2SA1015 2SA1016K 2SA1020 2SA1022
A933

Abstract: SA1015 A933 S 2sa864 2SA564 2sa872 2sa733 SA112 2SA718A 2SA984
Text: ttBÄ 2SA930 2SA1015 2SA990 2SA872 2SA564 2SA933 2SA 872 ID tí 2SA1016 2SA970 2SA992 2SA921 2 SA 10 3 8 2SA 872A ED tí 2SA1016K 2SA970 2SA1038 2SA 873 - «±a 2SA1015 2SA781(K) 2SA720


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PDF 2SA987 2SA929 2SA933 2SA984 2SA562TM 2SA953 2SA1390 2SA719 2SA1399 A933 SA1015 A933 S 2sa864 2SA564 2sa872 2sa733 SA112 2SA718A
2SA970

Abstract: 2SA934 2sa1015 2sa952 2sa933 2SA953 2sB1064 2SA1782 2SA720 2SA836
Text: m s Type No. tt « Manuf. s m SANYO Ä S TOSHIBA B a NEC S iL HITACHI « ± a FUJITSU fö t MATSUSHITA H « MITSUBISHI □ — A ROHM 2SA 671—' 0 ÌL 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2SA 672 a a 2SA1782 2SA1015 2SA953 2SA836 2SA720 2SA854 2SA 673' B S; 2SA984 2SA950 2SA719 2SA1399 2SA854 2SA 673A B ÍZ 2SA817A 2SA 673AK B iL 2SA817A 2SA 675. B B 2SA1016 2SA970 2SA77800 2SA1309A 2SA847A 2SA1039 677 - V- 2SA984 2SA1015 2SA952 2SA933 2SA 678 ✓ V- 2SA984


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PDF 2SB507 2SB596 2SA985 2SB856 2SB941 2SB1033 2SA1782 2SA1015 2SA953 2SA836 2SA970 2SA934 2sa952 2sa933 2sB1064 2SA720 2SA836
2sa850

Abstract: 2sa1047 2SA992 2SA872 2SB564A 2sa9630 2SA1038 2SB861 2SB1212 2sa733
Text: 2SA916 2SA952 2SB561 2SA1016 2SA817 2SA1Û15 2SA966 2SA965 2SA950 2SA733 2SA953 2SA673AOO 2SB718 2SB861 , 2SA 9 7 2 - ^ 36 JS 3E 2SA1011 2SA1016K 2SA1783 fé T


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PDF 2SA930 2SA931 2SA932 2SA933 2SA929 2SA1015 2SA872 2SA112Y 2SA999L 2SA933 2sa850 2sa1047 2SA992 2SA872 2SB564A 2sa9630 2SA1038 2SB861 2SB1212 2sa733
2SC308

Abstract: 2SA1699 2SA1392
Text: (mA) 1 f T typ (MHz) 110 I C I B V CE(sat) typ max (V) 1 0.5 ri " T1-T ( i iA) 10 2SA1016 ,K


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PDF SC-51 2SA1683 2SC4414 2SA1392 2SC3383 T0-126 2SA1450 2SB631, 2SD600, O-126 2SC308 2SA1699
SGF24

Abstract: 2SK2268 SGF23 2sk543 cross SGF12 2SK543 2SK2270 2SK2269 2SK1646 2SK1067
Text: ) 2SA1016 NP High-voltage, low-noise amplifier 120 100 5 50 400 125 1 80 160 to 960 6 1 110 6 1 2SA1016K NP


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PDF 2SC5230 2SA1016 2SA1016K 2SA1391 2SC2362 2SC2362K 2SC3382 7T17Q7b GDlb050 SGF24 2SK2268 SGF23 2sk543 cross SGF12 2SK543 2SK2270 2SK2269 2SK1646 2SK1067
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