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LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85
LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85

2sa1015 equivalent Datasheets Context Search

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2009 - 2sa1015

Abstract: 2sa1015 equivalent 2sa1015 transistor 2SA1015L TRansistor C 101 transistor 2sc1815 2sa1015 data sheet 2SA1015G transistor 2sa1015 2SC1815 DATASHEET
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER , INFORMATION Normal 2SA1015 -x-T92-B 2SA1015 -x-T92-K Ordering Number Lead Free Plating 2SA1015L , B Packing Tape Box Bulk 1of 4 QW-R201-004.C 2SA1015 PNP SILICON TRANSISTOR , TECHNOLOGIES CO., LTD www.unisonic.com.tw GR 200-400 BL 350-700 2of 4 QW-R201-004.C 2SA1015 , Voltage, BVCBO (V) 3of 4 QW-R201-004.C 2SA1015 PNP SILICON TRANSISTOR UTC assumes no


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PDF 2SA1015 150mA 2SC1815 2SA1015L 2SA1015G 2SA1015-x-T92-B 2SA1015-x-T92-K 2SA1015L-x-T92-B 2SA1015L-x-T92-K 2SA1015G-x-T92-B 2sa1015 2sa1015 equivalent 2sa1015 transistor 2SA1015L TRansistor C 101 transistor 2sc1815 2sa1015 data sheet 2SA1015G transistor 2sa1015 2SC1815 DATASHEET
2007 - transistor 2sa1015y

Abstract: 2sa1015 2SA1015Y 2SA1015-Y 2SA1015 G 2SA1015 GR 2SA1015 Y 2SA1015GR A1015 GR
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1015 2SA1015 -O 2SA1015 -Y 2SA1015 -GR PNP Silicon Plastic-Encapsulate Transistor TO-92 A E Features · · · · Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC x x Case Material: Molded Plastic. Classification Rating 94V-0 Marking:A1015 UL Flammability Electrical Characteristics @ 25OC


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PDF 2SA1015 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC A1015 100uAdc, 50Vdc, transistor 2sa1015y 2SA1015Y 2SA1015 G 2SA1015 GR 2SA1015 Y 2SA1015GR A1015 GR
2007 - 2SA1015

Abstract: 2sa1015gr 2SA1015 GR 2SA1015-Y A1015 y
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1015 -O 2SA1015 -Y 2SA1015 -GR PNP Silicon Plastic-Encapsulate Transistor TO-92 A E · · · · · · · · Features Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +125OC Epoxy meets UL 94 V , www.mccsemi.com Revision: E 1 of 3 2012/05/07 2SA1015 Typical Characteristics MCC Micro Commercial


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PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015 -100uAdc, 2SA1015 2sa1015gr 2SA1015 GR A1015 y
2014 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  FEATURES * Collector-Emitter Voltage: BVCEO=-50V * Collector Current up to 150mA , www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD 1of 4 QW-R201-004.D 2SA1015  PNP , 200-400 BL 350-700 2of 4 QW-R201-004.D 2SA1015  PNP SILICON TRANSISTOR TYPICAL , -101 -102 -103 Collector-Base Voltage, BVCBO (V) 3of 4 QW-R201-004.D 2SA1015 PNP


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PDF 2SA1015 150mA 2SC1815 2SA1015L-xx-T92-B 2SA1015G-xx-T92-B 2SA1015L-xx-T92-K 2SA1015G-xx-T92-K QW-R201-004
2007 - Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SA1015 -O 2SA1015 -Y 2SA1015 -GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to , details. www.mccsemi.com Revision: H 1 of 3 2013/01/01 MCC 2SA1015 Typical


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PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015
2007 - A1015

Abstract: 2SA1015 2SA1015 GR 2SA1015GR transistor A1015
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1015 -O 2SA1015 -Y 2SA1015 -GR PNP Silicon Plastic-Encapsulate Transistor TO-92 A E · · · · · · · · Features Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +125OC Epoxy meets UL 94 V , www.mccsemi.com Revision: F 1 of 3 2012/09/07 2SA1015 Typical Characteristics MCC Micro Commercial


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PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015 -100uAdc, 2SA1015 2SA1015 GR 2SA1015GR transistor A1015
2007 - 2SA1015

Abstract: 2SA1015 GR 2SA1015GR 2sa1015y
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1015 -O 2SA1015 -Y 2SA1015 -GR PNP Silicon Plastic-Encapsulate Transistor TO-92 A E · · · · · · · · Features Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +125OC Epoxy meets UL 94 V , . www.mccsemi.com Revision: H 1 of 3 2012/12/10 2SA1015 Typical Characteristics MCC Micro Commercial


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PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015 -100uAdc, 2SA1015 2SA1015 GR 2SA1015GR 2sa1015y
2003 - 2sa1015

Abstract: 2sa1015 datasheet 2sa1015 equivalent 2sa1015 transistor 2SA1015L transistor 2sa1015 2SC1815 2SA1015 Toshiba
Text: 2SA1015 (L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 (L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications · Unit: mm High voltage and high current: VCEO = -50 V (min), IC = -150 mA (max) · Excellent hFE linearity: hFE (2) = 80 (typ.) at , dB 0.2 3 O: 70~140, Y: 120~240, GR: 200~400 1 2003-03-27 2SA1015 (L) 2 2003-03-27 2SA1015 (L) RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF 2SA1015 2SC1815 2sa1015 datasheet 2sa1015 equivalent 2sa1015 transistor 2SA1015L transistor 2sa1015 2SC1815 2SA1015 Toshiba
2007 - 2SC1815

Abstract: 2sa1015 toshiba
Text: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications · · · · High voltage and high current: VCEO = -50 V (min), IC = -150 mA (max) Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = -6 V, IC = -150 mA : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise: NF = 1dB (typ.) (f = 1 , , GR: 200~400 1 2007-11-01 2SA1015 2 2007-11-01 2SA1015 RESTRICTIONS ON PRODUCT


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PDF 2SA1015 2SC1815. 2SC1815 2sa1015 toshiba
2sa1015

Abstract: 2SA1015L 2SC1815 2sa1015 transistor
Text: 2SA1015 (L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 (L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications · Unit: mm High voltage and high current: VCEO = -50 V (min), IC = -150 mA (max) · Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = -6 V, IC = -150 mA · : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise: NF = , O: 70~140, Y: 120~240, GR: 200~400 1 2003-03-27 2SA1015 (L) 2 2003-03-27 2SA1015


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PDF 2SA1015 2SC1815 2SA1015L 2SC1815 2sa1015 transistor
2007 - transistor 2sa1015y

Abstract: 2SA1015Y transistor A1015 A1015 gr A1015 a1015 transistor 2sa1015 transistor PNP 2SA1015GR 2sa1015 datasheet 2sa1015
Text: MCC TM Micro Commercial Components 2SA1015 -O 2SA1015 -Y 2SA1015 -GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features · · · · Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Case Material: Molded Plastic. Classification Rating 94V-0 Marking:A1015 UL Flammability PNP Silicon Plastic-Encapsulate Transistor TO-92 A E Electrical


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PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC A1015 transistor 2sa1015y 2SA1015Y transistor A1015 A1015 gr A1015 a1015 transistor 2sa1015 transistor PNP 2SA1015GR 2sa1015 datasheet 2sa1015
2SA1015

Abstract: 2SC1815 data 2sa1015
Text: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications · High voltage and high current: VCEO = -50 V (min), IC = -150 mA (max) · Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = -6 V, IC = -150 mA : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) · Low noise: NF = , ~140, Y: 120~240, GR: 200~400 1 2007-11-01 2SA1015 2 2007-11-01 2SA1015


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PDF 2SA1015 2SC1815. 2SA1015 2SC1815 data 2sa1015
Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SA1015 -O 2SA1015 -Y 2SA1015 -GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Capable of 0.4Watts of Power Dissipation. Collector-current: -0.15A Collector-base Voltage: -50V Operating and storage junction temperature range: -55OC to +125OC Epoxy meets UL 94 V , 2SA1015 Typical Characteristics MCC TM Micro Commercial Components w w w.m c c se m i.c om Re


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PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015
2SC1815C

Abstract: 2SC1815C0
Text: SEMICONDUCTOR TOSHIBA TRANSISTOR. TO SHIBA 2SA1015 TECHNICAL DATA SILICON PNP EPITAXIAL TYPE (PCT PROCESS) ( 2SA1015 ©) AUDIO FREQUENCY AM PLIFIER APPLICATIONS LOW NOISE AMPLIFIER APPLICATIONS Unit in mm . 5.1 MAX. · · · · High Voltage and High Current : V cE O = -5 0 V (Min , R eliability Handbook. SEMICONDUCTOR TO SHIBA 2SA 1015© TECHNICAL DATA ( 2SA1015 , (°C) \ 125 2SA1015 © - 2* 1996-09-02 T O S H IB A CORPORATION


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PDF 2SA1015 2SA1015© --150mA 2SC1815C0 -150O 2SC1815C
2007 - 2SA1015

Abstract: 2SA1015 GR 2SA1015GR A1015
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1015 -O 2SA1015 -Y 2SA1015 -GR PNP Silicon Plastic-Encapsulate Transistor TO-92 A E Features · · · · · · Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +125OC Epoxy meets UL 94 V , 200-400 DIM A B C D E G www.mccsemi.com Revision: C 1 of 3 2011/03/25 2SA1015 Typical


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PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015 100uAdc, 2SA1015 2SA1015 GR 2SA1015GR A1015
2007 - 2sa1015

Abstract: 2SA1015-Y 2SA1015 GR 2SA1015 Y 2SA1015GR transistor 2sa1015y 2SA1015Y
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1015 -O 2SA1015 -Y 2SA1015 -GR PNP Silicon Plastic-Encapsulate Transistor TO-92 A E Features · · · · · · Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +125OC Epoxy meets UL 94 V , 200-400 DIM A B C D E G www.mccsemi.com Revision: D 1 of 3 2012/01/20 2SA1015 Typical


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PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015 100uAdc, 2sa1015 2SA1015 GR 2SA1015 Y 2SA1015GR transistor 2sa1015y 2SA1015Y
2007 - 2SA1015

Abstract: 2SA1015 GR 2SA1015GR transistor 2sa1015y transistor 2SA1015
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1015 -O 2SA1015 -Y 2SA1015 -GR PNP Silicon Plastic-Encapsulate Transistor TO-92 A E · · · · · · · · Features Capable of 0.4Watts of Power Dissipation. Collector-current: -0.15A Collector-base Voltage: -50V Operating and storage junction temperature range: -55OC to +125OC Epoxy meets UL 94 , 1 of 3 2013/04/02 2SA1015 Typical Characteristics MCC Micro Commercial Components TM


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PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015 2SA1015 2SA1015 GR 2SA1015GR transistor 2sa1015y transistor 2SA1015
2007 - 25F1B

Abstract: 2SC1815 2SA1015L 2SC1815 2SA1015
Text: 2SA1015 (L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 (L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications · · · · High voltage and high current: VCEO = -50 V (min), IC = -150 mA (max) Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = -6 V, IC = , ) classification O: 70~140, Y: 120~240, GR: 200~400 1 2007-11-01 2SA1015 (L) 2 2007-11-01 2SA1015 (L) RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to change without


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PDF 2SA1015 2SC1815 25F1B 2SC1815 2SA1015L 2SC1815 2SA1015
2007 - 2SA1015

Abstract: transistor A1015 GR 2SA1015-Y 2SA1015 G 2SA1015 GR 2SA1015 Y 2SA1015GR
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1015 -O 2SA1015 -Y 2SA1015 -GR PNP Silicon Plastic-Encapsulate Transistor TO-92 A E Features · · · · Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC x x · Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL rating 1 Marking:A1015 Lead Free


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PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC A1015 2SA1015 transistor A1015 GR 2SA1015 G 2SA1015 GR 2SA1015 Y 2SA1015GR
2000 - 2SA1015

Abstract: AN103 EC680R LF353 VR18 LM393 Design Note 100 680R 1N4148 LM393 application note
Text: 2SA1015 4301P 12 47p R2 C14 OA3 Bypass for LF353 D4 1N4148 Release Rate GND EC9 16 IN 14 SYM 15 EC+ 680R D5 LM393 1N4148 U2B Q3 2SA1015 V+ V , R18 150k R19 C3 100n 50n R8 C6 VR3 50k Threshold V+ Q1 2SA1015 V


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PDF LM393 1N4148 2SA1015 4301P 2SA1015 AN103 EC680R LF353 VR18 LM393 Design Note 100 680R 1N4148 LM393 application note
2sa1015

Abstract: 2SC1815 ma2580 toshiba 2sa1015
Text: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications · Unit: mm High voltage and high current: VCEO = -50 V (min), IC = -150 mA (max) · Excellent hFE linearity: hFE (2) = , : hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400 1 2003-03-27 2SA1015 2 2003-03-27 2SA1015 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF 2SA1015 2SC1815. 2sa1015 2SC1815 ma2580 toshiba 2sa1015
2003 - 2sa1015

Abstract: 2sa1015 datasheet 2sa1015 equivalent 2SC1815 2Sa1015 toshiba
Text: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications · Unit: mm High voltage and high current: VCEO = -50 V (min), IC = -150 mA (max) · Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = -6 V, IC = -150 mA · : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ , 2SA1015 2 2003-03-27 2SA1015 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF 2SA1015 2SC1815. 2sa1015 2sa1015 datasheet 2sa1015 equivalent 2SC1815 2Sa1015 toshiba
2007 - A1015 gr

Abstract: 2sa1015 a1015 transistor 2SA1015 GR transistor 2sa1015y 2SA1015GR 2SA1015 Y 2SA1015 G 2SA1015-Y A1015 TO92
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1015 -O 2SA1015 -Y 2SA1015 -GR PNP Silicon Plastic-Encapsulate Transistor TO-92 A E Features · · · · Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC x x · Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL rating 1 Marking:A1015 Lead Free


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PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC A1015 A1015 gr 2sa1015 a1015 transistor 2SA1015 GR transistor 2sa1015y 2SA1015GR 2SA1015 Y 2SA1015 G A1015 TO92
2009 - 2SC1815

Abstract: 2SA1015L 2SA1015
Text: 2SA1015 (L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015 (L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications · Unit: mm High voltage and high current: VCEO = -50 V (min), IC = -150 mA (max) · Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = -6 V, IC = -150 mA · : hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Low noise: NF = , 2007-11-01 2SA1015 (L) 2 2007-11-01 2SA1015 (L) RESTRICTIONS ON PRODUCT USE · Toshiba


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PDF 2SA1015 2SC1815 2SC1815 2SA1015L
2SA1015

Abstract: 2SC1815 A101 2sc1815 toshiba transistor 2sa1015
Text: TOSHIBA TOSHIBA TRANSISTOR 2SA1015 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 2SA1015 -\ j SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Unit in mm . 5.1 MAX. · · · · High Voltage and High Current. : Vç;eO = - 50V (Min.), I = - 150mA (Max.) Excellent hFE Linearity q ^ r w' 0.45 0.55 MAX. 0.45 : hFE (IC = -0.1m A) / hFE (IC = , .1 - MHz 4 7 pF - 10 n dB 30 1.0 1 2001 05-31 - NJ TOSHIBA 2SA1015


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PDF 2SA1015 150mA 2SC1815. 2SA1015 2SC1815 A101 2sc1815 toshiba transistor 2sa1015
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