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2n7000 equivalent

Abstract:
Text: . 2N7000 or equivalent 2N7000 or equivalent 0V V+ power supply 7.0 to 24.0V input voltage 0 , not be allowed to source more than 1mA. 2N7000 or equivalent 2N7000 or equivalent 0V , 1mA. 2N7000 or equivalent 2N7000 or equivalent 0V Bottom View of 2N7000 Specifications


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PDF 2N7000 October/2003 2n7000 equivalent EQUIVALENT FOR 2N7000 equivalent of 2n7000 triac firing circuit 2N7000 ZMR50HF
2n7000 equivalent

Abstract:
Text: Alm D 1K D G S G S 2N7000 or equivalent 2N7000 or equivalent 0V Driving , COIL V+ 0V Vin Vin 100K Alm D 1K D G S G S 2N7000 or equivalent 2N7000 or equivalent 0V Driving a Relay The Alm output is shown driving a relay. Each , 100K Alm D 1K D G S G S 2N7000 or equivalent 2N7000 or equivalent 0V Bottom View of 2N7000 Specifications liable to change without prior warning FPSI 1010-2 Issue 1


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PDF 2N7000 July/2003 2n7000 equivalent 2n7000 data sheet hk relay 2N7000 buzzer 24vdc Mosfet 2n7000 ZMR50HF
equivalent of 2n7000

Abstract:
Text: source more than 1mA. 2N7000 or equivalent 2N7000 or equivalent 0V V+ power supply 7.0 , driving a relay. Alm must not be allowed to source more than 1mA. 2N7000 or equivalent 2N7000 or equivalent 0V OPTO-ISOLATOR V+ power supply 7.0 to 24.0V input voltage 0 to 30V , not be allowed to source more than 1mA. 2N7000 or equivalent 2N7000 or equivalent 0V Bottom View of 2N7000 Specifications liable to change without prior warning FPSI 1010-1 Issue 1


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PDF 2N7000 July/2003 equivalent of 2n7000 EQUIVALENT FOR 2N7000 triac firing circuit 2n7000 equivalent 2n7000 buzzer 60vdc ZMR50HF
2n7000 equivalent

Abstract:
Text: . Each Alm must not be allowed to source more than 1mA. 2N7000 or equivalent 2N7000 or equivalent 0V V+ power supply 7.0 to 24.0V input voltage 0 to 30V { { V+ 0V 0V RELAY , . 2N7000 or equivalent 2N7000 or equivalent 0V OPTO-ISOLATOR V+ power supply 7.0 to 24.0V , 100K Alm D 1K D G S G S 2N7000 or equivalent 2N7000 or equivalent 0V Bottom View of 2N7000 Specifications liable to change without prior warning FPSI 1010-2 Issue 3


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PDF 2N7000 October/2003 2n7000 equivalent 2N7000 ZMR50HF
triac firing circuit

Abstract:
Text: Vin Alm D 1K D G S G S 2N7000 or equivalent 2N7000 or equivalent 0V , S 2N7000 or equivalent 2N7000 or equivalent 0V D G S Bottom View of 2N7000


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PDF EM20-FPSI 2N7000 October/2003 triac firing circuit DIGITAL water level indicator 2N7000 ZMR50HF fpsi 1010
2n7000 equivalent

Abstract:
Text: 2N7000 or equivalent 2N7000 or equivalent 0V Driving a Relay The Alm output is shown driving a , FIRING CIRCUIT 100K D 1K D G S G S 2N7000 or equivalent 2N7000 or equivalent 0V D G S Bottom View of 2N7000 Specifications liable to change without prior warning


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PDF EM20-FPSI 2N7000 June/2003 2n7000 equivalent 2N7000 DIGITAL water level indicator flashing hk relay opto triac .5 A ZMR50HF
fpsi 1010

Abstract:
Text: 2N7000 or equivalent 2N7000 or equivalent 0V Driving a Relay The Alm output is shown driving a , CIRCUIT Alm 100K D 1K D G S G S 2N7000 or equivalent 2N7000 or equivalent 0V D G S Bottom View of 2N7000 Specifications liable to change without prior warning


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PDF EM20-FPSI 2N7000 October/2004 fpsi 1010 triac control circuit 220v to 110v 2N7000 2n7000 equivalent DIGITAL water level indicator triac firing circuit ZMR50HF
2008 - 2n7000 equivalent

Abstract:
Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary , P-Channel devices General Description The Supertex 2N7000 is an enhancement-mode (normallyoff , , bipolar transistors, etc.) Ordering Information Device 2N7000 -G Package Option TO-92 BVDSS/BVDGS (V , 94089 Tel: 408-222-8888 www.supertex.com 2N7000 Thermal Characteristics Package TO , % 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2 2N7000 Typical


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PDF 2N7000 DSPD-TO92TapingSpec B070610 2n7000 equivalent equivalent of 2n7000
1995 - 2n7000 equivalent

Abstract:
Text: Updt110494 6) LM340, AN7805 or equivalent 5) Logic level compatible FET 4) 8 Vdc minimum input requires an external pull-up resistor. 3) Resistor R9 must be removed and replaced with a jumper when using a ther 2) Components within dotted lines can be supplied for user-installation when ord 1 , (note 2) R3 R2 2N7000 Q2 10k R11 +V 2 .047µF GND C3 +V VOUT VIN 3 1 (note 4 , SW1 TP2 2N7000 Q3 1k R13 1k 1 R14 .1µF ADJ C9 (note 1) IN OUT 3 2 R15 LM317 +V


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PDF Updt110494 LM340, AN7805 100pF 2N7000 10AUX1 ICS1702 LM317 2n7000 equivalent lm317 equivalent EQUIVALENT FOR 2N7000 ICS1702 D1 321 LM317 2N7000 FET 2N7000 fet 2n7000
1997 - 2N7000

Abstract:
Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor , D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25°C unless otherwise noted 2N7000 2N7002 NDS7002A Symbol Parameter VDSS , 2N7000 .SAM Rev. A1 Electrical Characteristics T Symbol A = 25°C unless otherwise noted , VDS = 48 V, VGS = 0 V 2N7000 V 1 VDS = 60 V, VGS = 0 V TJ=125°C 2N7002 NDS7002A µA


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PDF 2N7000 2N7002 NDS7002A 400mA fairchild 2n7000 2N700 "ON Semiconductor" 2N7002 2N7000/BS170L 2n7000 equivalent 2N700 mosfet 100C NDS7002A
1997 - 2N7002

Abstract:
Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor , D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25°C unless otherwise noted 2N7000 2N7002 NDS7002A Symbol Parameter VDSS , 417 °C/W 2N7000 .SAM Rev. A1 Electrical Characteristics T Symbol A = 25°C unless , Voltage Drain Current VDS = 48 V, VGS = 0 V 2N7000 V 1 VDS = 60 V, VGS = 0 V TJ


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PDF 2N7000 2N7002 NDS7002A 400mA
2n7000+complement

Abstract:
Text: Vo ltale Type Min. T yp . 2N7000 60 Max. 80 Unita V Tee* Conditions VG g - 0 I0 - 1 0 * j A as m A V QS(th) Gate-Threshofd Voltage 2N7000 1.8 3 V IQ S S F Gate-Body leakage Forward 2N7000 1 10 nA V Q S -+ 1 5 V ^GSSR Gate*8ody Leakage R a w s « 2N7000 -1 -1 0 nA V G S — 16V 2N7000 0.1 1 MA V D S -4 8 V .V q s - 0 2N7000 ai 1 mA V d s “ 48V T q - 125"C *V q s “ 0


OCR Scan
PDF GG0321 in-100 200mA 123mA 2N7000 N7000 2n7000+complement 2N7000 2n7000 darlington
2001 - 2N7000 series protection

Abstract:
Text: supply with a 10A maximum load current is equivalent to 180m9 load resistance. If the total resistance , scheme overcomes this dilemma (Figure 10). 2N7000 +SENSE 3M 9 R1 200 9 1M 9 V OUT RS , prevent the 2N7000 from turning on before the power MOSFET is fully enhanced. Increase the 1M9 resistor , 2N7000 small signal MOSFET thereby connecting the +Sense lead to the Card-Side after the power MOSFET is fully enhanced. The 1N4148 is used to quickly shut-off the 2N7000 when a fault occurs. Without it, the


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PDF SMT4004 2N7000 series protection power mosfet IRC Isotek 1N4148V Philips Surface mount ceramic isotek pma IRF6603 IRF3703 HUF76145S3S WSL3637
fpsi 1010

Abstract:
Text: 7 6 5 D 1K G S FPSI 1010 2N7000 or equivalent 0V OPTO-ISOLATOR power , allowed to source more than 1mA. 2N7000 or equivalent 0V Consult the MOSFET datasheet for maximum drain current. Bottom View of 2N7000 Output 1 Input Output 2 Output 3 FPSI 1010


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PDF 2N7000 October/2003 fpsi 1010 hk relay hk relay 12 v voltage level indicator 2N7000 2N7000 MOSFET PIN DETAILS 5 pin relay configuration
1997 - 2N7000 021

Abstract:
Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor , D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25°C unless otherwise noted 2N7000 2N7002 NDS7002A Symbol Parameter VDSS , 2N7000 .SAM Rev. A1 Electrical Characteristics T Symbol A = 25°C unless otherwise noted , VDS = 48 V, VGS = 0 V 2N7000 V 1 VDS = 60 V, VGS = 0 V TJ=125°C 2N7002 NDS7002A µA


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PDF 2N7000 2N7002 NDS7002A 400mA 2N7000 021 2N7000 MOSFET D3000 Mosfet 2n7000 2n7000 data sheet nds7000 PN2222N 2n7002-1 CBVK741B019
2005 - 2n7002

Abstract:
Text: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET™II MOSFET Table 1: General Features TYPE Figure 1: Package RDS(on) Id 60 V 60 V 2N7000 2N7002 VDSS < 5 , PACKAGE PACKAGING 2N7000 2N7000G TO-92 BULK 2N7002 ST2N SOT23-3L TAPE & REEL Rev. 3 April 2005 1/11 2N7000 - 2N7002 Table 3: Absolute Maximum ratings Symbol Parameter , 5.3 Ω Ω 2N7000 - 2N7002 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol


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PDF 2N7000 2N7002 OT23-3L OT23-3L 2n7002 2N7000 mosfet 2N7000
1997 - 2N700

Abstract:
Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor , 2N7000 2N7002 NDS7002A Symbol Parameter VDSS Drain-Source Voltage 60 V VDGR , , Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 312.5 625 417 °C/W 2N7000 .SAM Rev. A1 , 2N7000 V 1 VDS = 60 V, VGS = 0 V TJ=125°C 2N7002 NDS7002A µA 1 TJ=125°C mA 1 µA 0.5 mA Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 2N7000 10 nA VGS


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PDF 2N7000 2N7002 NDS7002A 400mA 2N700 "ON Semiconductor" 2N7002 100C 2N700 mosfet CBVK741B019 NDS7002A PN2222N
voltage level indicator

Abstract:
Text: D 1K G S FPSI 1010 D G S 2N7000 or equivalent Driving a Triac One of the 3 , allowed to source more than 1mA. RELAY COIL 7 6 5 D 1K G S FPSI 1010 2N7000 or equivalent 0V OPTO-ISOLATOR power supply 4.75 to 5.5V input voltage { { 1 2 3 4 V , Consult the MOSFET datasheet for maximum drain current. Bottom View of 2N7000 Output 1 Input


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PDF 2N7000 June/2003 voltage level indicator triac firing circuit 2N7000
1997 - 2N7000

Abstract:
Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor , D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25°C unless otherwise noted 2N7000 2N7002 NDS7002A Symbol Parameter VDSS , 2N7000 .SAM Rev. A1 Electrical Characteristics T Symbol A = 25°C unless otherwise noted , VDS = 48 V, VGS = 0 V 2N7000 V 1 VDS = 60 V, VGS = 0 V TJ=125°C 2N7002 NDS7002A µA


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PDF 2N7000 2N7002 NDS7002A 400mA 2N700 "ON Semiconductor" 2N7002 nds7000 mosfet 2n7000 2n7002 12 2n7000 equivalent 17VGS 100C
2005 - 2N7002

Abstract:
Text: 2N7000 2N7002 N-CHANNEL 60V - 1.8 - 0.35A SOT23-3L - TO-92 STripFETTMII MOSFET Table 1: General Features TYPE Figure 1: Package RDS(on) Id 60 V 60 V 2N7000 2N7002 VDSS < 5 (@ 10V , PACKAGING 2N7000 2N7000G TO-92 BULK 2N7002 ST2N SOT23-3L TAPE & REEL Rev. 3 April 2005 1/11 2N7000 - 2N7002 Table 3: Absolute Maximum ratings Symbol Parameter Value , , TC = 125°C µA 10 1 µA ±100 nA 2.1 3 V 1.8 2 5 5.3 2N7000


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PDF 2N7000 2N7002 OT23-3L OT23-3L 2N7002 2N7002 MARKING ST2N 2N7000 MOSFET 2N7002 SOT23 2n7000 2N7000G codes marking st2n 2N7002 di 2n7000 equivalents
1997 - 2n7000

Abstract:
Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor , D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25°C unless otherwise noted 2N7000 2N7002 NDS7002A Symbol Parameter VDSS , 2N7000 .SAM Rev. A1 Electrical Characteristics T Symbol A = 25°C unless otherwise noted , VDS = 48 V, VGS = 0 V 2N7000 V 1 VDS = 60 V, VGS = 0 V TJ=125°C 2N7002 NDS7002A µA


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PDF 2N7000 2N7002 NDS7002A 400mA 100C 2N700 CBVK741B019 NDS7002A PN2222N
1997 - 2n7000

Abstract:
Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor , 2N7000 2N7002 NDS7002A Symbol Parameter VDSS Drain-Source Voltage 60 V VDGR , , Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation 312.5 625 417 °C/W 2N7000 .SAM Rev. A1 , 2N7000 V 1 VDS = 60 V, VGS = 0 V TJ=125°C 2N7002 NDS7002A µA 1 TJ=125°C mA 1 µA 0.5 mA Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 2N7000 10 nA VGS


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PDF 2N7000 2N7002 NDS7002A 400mA 100C 2N700 2N700 mosfet CBVK741B019 NDS7002A PN2222N
2004 - ST2N

Abstract:
Text: 2N7000 2N7002 N-CHANNEL 60V - 1.8 - 0.35A SOT23-3L - TO-92 STripFETTMII POWER MOSFET , 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8 @10V LOW Qg LOW THRESHOLD DRIVE 3 1 SOT23 , -3L TO-92 ORDER CODE PART NUMBER MARKING PACKAGE PACKAGING 2N7000 2N7000G TO-92 BULK 2N7002 ST2N SOT23-3L TAPE & REEL February 2004 1/7 2N7000 - 2N7002 ABSOLUTE , Unit V V 1 1.8 2 5 5.3 2N7000 - 2N7002 ELECTRICAL CHARACTERISTICS (TCASE = 25


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PDF 2N7000 2N7002 OT23-3L OT23-3L ST2N STO-23 ST2N transistor 2N7002 MARKING 2N7000 DSS SOT23 2N7002 SOT23 2N7002 2N7000G 2n7000+complement
2008 - 2N7000 circuits

Abstract:
Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V , Packaging 2N7000 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape and reel November 2008 Rev 9 1/14 www.st.com 14 Contents 2N7000 , 2N7002 Contents 1 Electrical , let o bs O 2/14 bs O 2N7000 , 2N7002 1 Electrical ratings Electrical ratings


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PDF 2N7000 2N7002 OT23-3L, OT23-3L 2N7000 circuits marking BS SOT23
1995 - uart 8250

Abstract:
Text: slots and 2 Write­ Zero time slots (this is equivalent to sending 33H, least significant bit first). , critical. The transistor 2N7000 has been chosen since it is a very common product and has a low threshold , 2N7000 D3 1N5232 5.6V TXD D1 1N5242 12V Q1 2N7000 D2 1N5232 5.6V GND 040797 15 , G Q3 2N7000 PGMEN D4 1N5242 12V Q4 2N7000 S R1 4.7K RXD D5 ERA­82­004 D G TXD S D1 1N5242 12V Q1 2N7000 D2 1N5242 12V GND 040797 17/40


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PDF 1N5228 1N5234 1N5235 1N5242 2N7000 BSS110 uart 8250 8250 uart 8250 uart datasheet programmable interval timer 8253 real time microprocessor 8253 applications interfacing 8051 with eprom and ram 100 ohm POT .25W 8253 timer 8250 uart sample c programs 8253 Programmable Interrupt Controller
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