The Datasheet Archive

2n6761 datasheet (16)

Part ECAD Model Manufacturer Description Type PDF
2N6761 2N6761 ECAD Model Fairchild Semiconductor N-Channel Power MOSFETs, 4.5A, 450V/500V Scan PDF
2N6761 2N6761 ECAD Model General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. Scan PDF
2N6761 2N6761 ECAD Model Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
2N6761 2N6761 ECAD Model International Rectifier TO-3 N-Channel HEXFETs Scan PDF
2N6761 2N6761 ECAD Model IXYS High Voltage Power MOSFETs Scan PDF
2N6761 2N6761 ECAD Model IXYS High Voltage Power MOSFETs Scan PDF
2N6761 2N6761 ECAD Model Motorola European Master Selection Guide 1986 Scan PDF
2N6761 2N6761 ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
2N6761 2N6761 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6761 2N6761 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N6761 2N6761 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
2N6761 2N6761 ECAD Model Others FET Data Book Scan PDF
2N6761 2N6761 ECAD Model National Semiconductor N-Channel Power MOSFETs Scan PDF
2N6761 2N6761 ECAD Model Semelab MOS Transistors Scan PDF
2N6761 2N6761 ECAD Model Semiconductor Technology High Voltage MOS Power Field Effect Transistors Scan PDF
2N6761 2N6761 ECAD Model Siliconix MOSPOWER Design Data Book 1983 Scan PDF

2n6761 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N6761

Abstract: 2N6762 2N6767 2nc762
Text: impedance ■Majority carrier device □Dlfi3Tb S _ Standari diov T-39-11 ower MOSFETs 2N6761 , 2N6762 The 2N6761 and 2N6762 are n-channel enhancement-mode silicon-gate power field-effect transistors , -204AA Absolut* Maximum Ratino* Parameter 2N6761 2N6767 Uni II Vos Orein - Source Velia«» 450* 900* V , _ 2N6761 , 2N6762 Electrical Characteristic* @ Tc = 25°C (Unto* OthwwiM SpMlfM) Far«m«««f Typ« Mm. Typ. Ma«. Uniti Tait Condition« ®VDSS Orxn — Sourca Breakdown Voltage 2N6761 450 - - V


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PDF T-39-11 2N6761, 2N6762 2N6761 2N6762 3fi75Dfll 2N6767 2nc762
TDA 3780

Abstract: 2N6762 2N6761
Text: Standard Power MOSFETs 2N6761 , 2N6762 N-Channel Enhancement-Mode Power Field-Effect , – Majority carrier device File Number 1589 The 2N6761 and 2N6762 are n-channe!l enhancement-mode , DESIGNATIONS 6ATE 92CS-3780I JEDEC TO-204AA Absolute Maximum Ratings Parameter 2N6761 2N6762 Units "OS , * (6.063 in. (1,6mm) from ease for 10s) °C 3-484 Standard Power MOSFETs 2N6761 , 2N6762 Electrical , 8VOSS Drein - Source Breakdown Voltage 2N6761 450 - - V vGS-° lD = 4.0 mA 2N6762 500 - - V vGS(th


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PDF 2N6761, 2N6762 2N6761 2N6762 I2N6761) 2N6762) TDA 3780
M2N6761

Abstract: 2N6761 2N6762 27809
Text: 3469674 FAIRCHILD SEMICONDUCTOR BMhTbTM 0GS7ÛDS 2N6761 /2N6762 FAiRCHiLD N-Channel Power , Rating 2N6762 Rating 2N6761 Unit Voss Drain to Source Voltage 500 450 V vdgr Drain to Gate Voltage Rgs , | B4tiTt,7M DDSTflOti 0 2N6761 /2N6762 T-39-11 Electrical Characteristics (Tc = 25°C unless otherwise , Drain Source Breakdown Voltage1 2N6762 2N6761 V VGS = 0 V, lD = 4 mA 5002 4502 loss Zero , On-Resistance1 2N6762 2N6761 2N6762 2N6761 n VGS = 10 V lD = 3.0 A lD = 2.5 A lD = 3.0 A, Tc= 125-C lD = 2.5A


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PDF 2N6761/2N6762 T-39-11 2N6762 2N6761 PC0984IF 34bTt M2N6761 27809
2N6761

Abstract: UNITRODE TRANSISTORS SA-A
Text: 2N6761 2N6762 2 .on i.5 n MECHANICAL SPECIFICATIONS 2N6761 JAN. JANTX, & , n sio n s in M illim eters and (Inches) 11/83 2-56 UNITRODE 2N6761 JAN, JANTX, & JANTXV , Temperature Ranga Lead Temperature 2N6761 4S0* 450* 4 .0 * 2 .5 * 6.0 ± 20 * 7 5* (SaaFig. 11) 3 0 * (SaaFig , 2N6761 2N6762 2N6761 2N6762 2N6761 2N 6762 V GS- 'O = 1 mA V GS - 20V V GS - -2 0 V V Q g * 0 .8 X , Diode) Pulsed Source Current (Body Diode) Diode Forward Voltaga ^ 2N6761 2N6762 2N6761 2N 6762 2N6761


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PDF MIL-S-19500/542A 2N6761 UNITRODE TRANSISTORS SA-A
2N6762 JANTX

Abstract: 2N6762 2N6903 2N6162 power mosfets to 204aa 2N6904 2N6898 2N6761 2n6800 2N6898 JANTXV
Text: Standard Power MOSFETs 2N6761 , 2N6762 N-Channel Enhancement-Mode Power Field-Effect , – Majority carrier device File Number 1589 The 2N6761 and 2N6762 are n-channe!l enhancement-mode , DESIGNATIONS 6ATE 92CS-3780i JEDEC TO-204AA Absolute Maximum Ratings Parameter 2N6761 2N6762 Units "os , * (6.063 in. (1,6mm) from ease for 10s) °C 3-484 Standard Power MOSFETs 2N6761 , 2N6762 Electrical , 8VOSS Drein - Source Breakdown Voltage 2N6761 450 - - V vGS-° lD = 4.0 mA 2N6762 500 - - V vGS(th


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PDF 2N6761, 2N6762 2N6761 2N6762 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6762 JANTX 2N6903 2N6162 power mosfets to 204aa 2N6904 2N6898 2N6898 JANTXV
S1B02

Abstract: lts 542 2N6761
Text: Current Ease of Paralleling Excellent Temperature Stability Product Summary Part Number 2N6761 2N6762 , and 2N6761 Devices . , . r Absolute Maximum Ratings Parameter U) O > v OGR Id ® T c -2 5 °C I q 9 T c - 100°C 'dm v QS PD 9 T C =.25°C PD « T C " " W ° c *LM tj H E 2N6761 4 50* 4 50 * 4 .0 * 5 , Electrical Characteristics @ T (j = 25°C (Unless Otherwise Specified) Parameter b v dss Type 2N6761 , Forward Gate - Body Leakage Reverse Zero Gata Voltage Drain Currant A LL ALL ALL ALL 2N6761 2N6762


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PDF MflS5M52 MIL-S-19500/542 JANTXV2NB762 JAI\ITX2NB762 2N67G1 para-11 G-294 S1B02 lts 542 2N6761
Not Available

Abstract: No abstract text available
Text: ■4302571 00S37Eb 253 ■HAS 2N6761 2N 6762 H a rris N-Channel Enhancem , N-CHANNEL POWER MOSFETs The 2N6761 and 2N6762 are n-channel enhancement-mode silicon-gate power , +25°C ) Unless Otherwise Specified 2N6761 Drain-Source V o lta g e , GS(1h) Gete Threshold Voltage Min 2N6761 Parameter Dram - Source Breakdown Voltage 8 V 0 , Rating, V q s * 0 V DS - Max Rating, V GS * 0, T c = 25 °C to 125°C - 02 4 0* mA 2N6761


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PDF 00S37Eb 2N6761 2N6761 2N6762 25DEh
ulw diode

Abstract: No abstract text available
Text: 92D 10504 POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel 2N6761 J , JTX, JTXV 2N6762 , T Parameter 2N6761 4 50 * 45Q* 4 .0 * 2 .6 * 6 .0 ¿20* 7 5 * (See Fig. 11) 3 0 * (See Fig. 11) 0 .6 , * 2 5 °C (Unless otherwise specified) Paramatar B voss Drain - Sourca Breakdown Voltage Type 2N6761 , 2N6761 2N 67 6 2 2N6761 2N6762 2N6761 2N6762 ALL ALL A LL ALL ALL ALL ALL ALL 2.5* 3 50* 25* 15* " A LU , Source C urrant (B ody Diode) Pulsed Source Current (B ody Oiode) Diode Forward Voltag« 2N6761 2N 6762


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PDF 347Tb3 2N6761 2N6762 ulw diode
2N6761

Abstract: No abstract text available
Text: 4-21 N-CH AN N EL POWER M O SF E T s 2N6761. 2 N 6 7 6 2 V S 0 . SOURCE TO O RA IN VOLTAGE , D escription The 2N6761 and 2N 6762 are n-channel enhancement-mode siiicon-gate power field-effect , +25°C ) Unless Otherwise Specified 2N6761 2N6762 U N IT S D rain-Source V o lta g e , - Source Breakdown Voltage Type 2N6761 2N6762 ^ G S (t h ) O a t* Threshold VoJtaga Iq SS F lG S S R , Capacitance Turn-On Delay Tim e Rise Time Turn-O ff Delay Tima Fall Tima 2N6761 2N6762 2N6761 2N6762 2N6761


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PDF 2N6762 2N6761 2N6761.
Not Available

Abstract: No abstract text available
Text: T C = 125°C 2N6761 V o S lo n l A Vq s = * o v 2N 6762 iD fo n ) 4.0 4.5 A , On-State V oltage* 2N6761 8 .0 * V V G S = 1 0 V J d = 4 -o a 2 N 6762 7.7* V V q s = *0V , I D = 4.5 A R O S Ion l 2N6761 1.5 2 .0 * 12 V q s = 1 0 V . ì q - 2 , 2N6761 -4 * A 2N 6762 -4 .5 * A 2N 6761 —6 * A Free A ir O peration , e -7 * A 2N6761 Vso -0 .6 5 * -1 .3 * V 2N 6762 -0 .7 -1 .4 * V T


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PDF T-39-11 2N6761 T-39-H
MTM2P45

Abstract: MTM15N50 mtm2n45 MTM2P50 MTM6N90 MTM2N85 MTP3N80 MTM1N100 MTM2N90 MTM6N60
Text: * 2 75 4 MTM2N45 IRF423 40 3 IRF421 2.5 1.5 MTM3N45 3 75 2 2.5 2N6761 4


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PDF O-204 MTM1N100 MTM3N100 MTM5N100 MTM1N95 MTM3N95 MTM5N95 MTM2N90 MTM4N90 MTM6N90 MTM2P45 MTM15N50 mtm2n45 MTM2P50 MTM2N85 MTP3N80 MTM6N60
2N6912

Abstract: 1N45 2N6917 STM15N45 STM-320 STM15N40/3 2N6759 MTM15N40 2N6761 2N6762
Text: 2/4 30 55 3.5 TO-3 2N6760 2N6760 400 5.5 1.0 3.0 3.5 2/4 30 55 3.5 TO-3 2N6761 2N6761 450 4.0 2.0


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PDF 2N6759 2N6760 2N6761 2N6762 2N6767 2N6912 1N45 2N6917 STM15N45 STM-320 STM15N40/3 MTM15N40
T0220H

Abstract: T072 T046 T018 2N6659 2N4416 2N4393 2N4391 2N3824LP 2N3824
Text: 200 0.4 9 75 2H6759 REQ N-CH T03 350 1.5 4.5 75 2N6760 REQ N-CH T03 400 1.0 5.5 75 2N6761 REQ N-CH


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PDF 2N3824 2N3824LP 2N4391 2H4392 2N4393 2N4416 2N6659 2N6660 2N6661 2N6661-220H- T0220H T072 T046 T018
Not Available

Abstract: No abstract text available
Text: NATL N-Channel Power MOSFETs (Continued) Typo No. IRF732 IRF733 MTP5N35 MTP5N40 2N6761 2N6762 IRF430 IRF431 9-17 IRF432 IRF433 IRF830 IRF831 IRF832 IRF833 C asa Style TO-220 (37) TO-220 (37) TO-220 (37) TO-220 (37) TO-2Û4AA (42) TO-2Û4AA (42) TO-2Û4AA (42) TO-2Û4AA (42) T0-204AA (42) TO-2Û4AA (42) TO-220 (37) TO-220 (37) TO-220 (37) TO-220 (37) Pd (W) T C = 2S"C 75 75 75 75 75 75 75 75 75 75 75 75 75 75 Vd s s (V) M in 400 350 350 400 450 500 500 450 500 450 500 450 500 450 lD @ Tc = 25°C (A) 4.5


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PDF IRF732 IRF733 MTP5N35 MTP5N40 2N6761 2N6762 IRF430 IRF431 IRF432 IRF433
IRF9520 equivalent

Abstract: IRF9532 equivalent IRF9532 IRF9530 equivalent IRF9613 IRF9230 IRF9133 IRF9132 IRF9131 IRFF121
Text: €” 2N6761 450 2.0 TO-3 IRF433 — — 2N6762 500 1.5 TO-3 IRF430 — — 2N6763 60 0.08 TO-3 — — â


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PDF IRF9130 IRF9130* IRF9131 IRF9131 IRF9132 IRF9132 IRF9133 IRF9133 IRF9230 IRF9231 IRF9520 equivalent IRF9532 equivalent IRF9532 IRF9530 equivalent IRF9613 IRFF121
jfet selector guide

Abstract: T0-220SM
Text: SEMELAB pic Type_No SELECTOR GUIDE Technology Polarity MOS PRODUCTS Package VDSS RDSS_on ID Pd June 1998 Ver. 1.1 Ciss_pf Qg_nC Td_on Tr Td_off Tf 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6781 2N6781-SM 2N6781LCC4 2N6782 2N6782


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PDF 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 jfet selector guide T0-220SM
IRF449

Abstract: 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6769 IRF923 IRF9141 irf420
Text: HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE J> TO-3 Package N-CHANNEL INTERNATIONAL RECTIFIER JOR HassHsa ooiosb2 o ■"T-S^ôS Types VDS RDS(ON) Id cant IDM PD Bulletin Case Style (man) TC - 25"C pulsed max V fi A A W IRF451 0.4 13.0 52.0 150 PD-9.322 T0-204AA IRF453 0.5 11.0 44.0 150 PD-9.322 (TO-3) 2N6769 0.5 11.0 48.0 150 PD-9.340 IRF441 0.85 8.0 32.0 125 PD-9.372 IRF443 4Rfl 1.1 7.0 28.0 125 P09.372 1RF431 1.5 4.5 15.0 75 PD-9.310 2N6761 2.0 4.0 16.0 75 PD9


OCR Scan
PDF IRF451 T0-204AA IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF449 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6769 IRF923 IRF9141 irf420
P-Channel Power MOSFETS mtm2p50

Abstract: MTM2P50 MTP3N80 MTM2N45 MTM6N90 MTM4N50 MTM2N85 MTP2P45 MTM7N50 MTM1N100
Text: IRF423 40 3 IRF421 2.5 1.5 MTM3N45 3 75 2 2.5 2N6761 4 •Indicates P-Channel MOTOROLA


OCR Scan
PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 P-Channel Power MOSFETS mtm2p50 MTP3N80 MTM2N45 MTM6N90 MTM4N50 MTM2N85 MTP2P45 MTM7N50 MTM1N100
MTP3N80

Abstract: MTP1N60 MTM2N45 MTM1N100 mtp2n50 MTP2P45 MTM7N50 mtm2n50 MTM6N60 MTP6N60
Text: 1.5 MTM3N45 3 75 2 2.5 2N6761 4 •Indicates P-Channel MOTOROLA EUROPEAN MASTER SELECTION GUIDE


OCR Scan
PDF T0-220AB O-220AB 21A-02 MTP1N100 MTP3N100 MTP1N95 MTP3N95 MTP2N90 MTP4N90 MTP2N85 MTP3N80 MTP1N60 MTM2N45 MTM1N100 mtp2n50 MTP2P45 MTM7N50 mtm2n50 MTM6N60 MTP6N60
2N6764

Abstract: 2N6761 2N676 2N6759 2N6758 2N6757 2N6756 2N6755 2n6800 2N6767
Text: 3.0 3.5 800 300 80 25 T0-204AA 2N6761 IR n 450 ±20 4.0 75 ±100 ±20 1000 360 2.0 4.0 2.0 10 2. 5


OCR Scan
PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-205AF 2N6798 2N6764 2N6761 2N676 2N6759 2n6800 2N6767
1N7000

Abstract: 1N7001 XTP4N80 IXTP4N90 IXTP4N80A 2N6755 2N6661 2N6660 1N6784 1N6660
Text: ±20 5. 5 75 ±100 ±20 1000 400 2 4 1.0 10 3. 5 3.0 3.5 800 300 80 25 TO-204AA 2N6761 MOT N 450 Â


OCR Scan
PDF XTP4N80 O-220 IXTP4N80A IXTP4N90 CASE79-05 2N6784 2N6788 1N7000 1N7001 2N6755 2N6661 2N6660 1N6784 1N6660
1N7001

Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 IXTP4N90A IXTP4N90 BUZ211 2N6823 2N6826
Text: 3.0 3.5 800 300 80 25 T0-204AA 2N6761 IR n 450 ±20 4.0 75 ±100 ±20 1000 360 2.0 4.0 2.0 10 2. 5 , 400 2 4 1.0 10 3. 5 3.0 3.5 800 300 80 25 TO-204AA 2N6761 MOT N 450 ±20 4.0 75 ±100 ±20 1000


OCR Scan
PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 IXTP4N90A IXTP4N90 BUZ211 2N6823 2N6826
2n6152

Abstract: 1N7000 2N676 2N61B 2N6757 2N6764 2N5184 2n6800 IXTP4N90 IXTP4N90A
Text: 3.0 3.5 800 300 80 25 T0-204AA 2N6761 IR n 450 ±20 4.0 75 ±100 ±20 1000 360 2.0 4.0 2.0 10 2. 5 , 400 2 4 1.0 10 3. 5 3.0 3.5 800 300 80 25 TO-204AA 2N6761 MOT N 450 ±20 4.0 75 ±100 ±20 1000


OCR Scan
PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N676 2N61B 2N6764 2N5184 2n6800 IXTP4N90 IXTP4N90A
irf532 equivalent

Abstract: irf530 equivalent VN64GA IRF9230 IRF9133 IRF9132 IRF9131 IRF9130 vn1200d irf9620
Text: €” 2N6761 450 2.0 TO-3 IRF433 — — 2N6762 500 1.5 TO-3 IRF430 — — 2N6763 60 0.08 TO-3 — — â


OCR Scan
PDF IRF9130 IRF9130* IRF9131 IRF9131 IRF9132 IRF9132 IRF9133 IRF9133 IRF9230 IRF9231 irf532 equivalent irf530 equivalent VN64GA vn1200d irf9620
IRF 715

Abstract: IRF9233 IRF9231 IRF9230 IRF9133 IRF9132 IRF9131 IRF9130 IRFF121 IRF9523
Text: €” 2N6761 450 2.0 TO-3 IRF433 — — 2N6762 500 1.5 TO-3 IRF430 — — 2N6763 60 0.08 TO-3 — — â


OCR Scan
PDF IRF9130 IRF9130* IRF9131 IRF9131 IRF9132 IRF9132 IRF9133 IRF9133 IRF9230 IRF9231 IRF 715 IRF9233 IRFF121 IRF9523
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