The Datasheet Archive

2n6759 datasheet (16)

Part ECAD Model Manufacturer Description Type PDF
2N6759 2N6759 ECAD Model Fairchild Semiconductor N-Channel Power MOSFETs, 5.5A, 350V/400V Scan PDF
2N6759 2N6759 ECAD Model General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. Scan PDF
2N6759 2N6759 ECAD Model Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
2N6759 2N6759 ECAD Model IXYS High Voltage Power MOSFETs Scan PDF
2N6759 2N6759 ECAD Model IXYS High Voltage Power MOSFETs Scan PDF
2N6759 2N6759 ECAD Model Motorola Switchmode Datasheet Scan PDF
2N6759 2N6759 ECAD Model Motorola European Master Selection Guide 1986 Scan PDF
2N6759 2N6759 ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
2N6759 2N6759 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6759 2N6759 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N6759 2N6759 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
2N6759 2N6759 ECAD Model Others FET Data Book Scan PDF
2N6759 2N6759 ECAD Model National Semiconductor N-thannel Power MOSFETs Scan PDF
2N6759 2N6759 ECAD Model Semelab MOS Transistors Scan PDF
2N6759 2N6759 ECAD Model Semiconductor Technology High Voltage MOS Power Field Effect Transistors Scan PDF
2N6759 2N6759 ECAD Model Siliconix MOSPOWER Design Data Book 1983 Scan PDF

2n6759 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N6760

Abstract: MF2400 2N6759 E7A04
Text: ö4 MT| 34tTb74 DDETflüD <=\ 3469674 FAIRCHILD SEMICONDUCTOR 84D 27800 D ■nm 2N6759 /2N6760 , Requirements • Ease of Paralleling Maximum Ratings TO-2Q4AA 2N6759 2N6760 Symbol Characteristic Rating 2N6760 Rating 2N6759 Unit Vdss Drain to Source Voltage 400 350 V Vdgr Drain to Gate Voltage RGs = 1.0 , FAIRCHILD SEMICONDUCTOR 84D 27801 D» 2N6759 /2N6760 j-39-11 Electrical Characteristics (Tc = 25°C unless , )DSS Drain Source Breakdown Voltage1 2N6760 2N6759 V Vgs = 0 V, ID = 1.0 mA 4002 3502


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PDF 34tTb74 2N6759/2N6760 T-39-11 2N6759 2N6760 2N6760 E7A04 MF2400
1A31E

Abstract: 2N6759 2N6760
Text: -39-11 File Number 1588 2N6759 , 2N6760 N-Channel Enhancement-Mode Poyver Field-Effect Transistors 4.5A and , carrier device The 2N6759 and 2N6760 are n-channel enhancement-mode silicon-gate power lield-etfect , -204AA Absolute Maximum Rating* Parameter 2N6759 2N6760 Uniti Vqj Oram - Sour« Voltag« 350* 400' V VoGR Drain , _ SJATE QJL ])71 3fl7SDfll □ 0 JL fl 3 □ ■Standard Power MOSFETs _ '-39-11 2N6759 , 2N6760 , . Tc • 125°C VqsIoaI Slat*« Oriin Sourea Orv-Siat* Volili« Q 2N6759 - 7 0* V VQJ • JOV, iQ â


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PDF 1A31E T-39-11 2N6759, 2N6760 2N6759 2N6760 2N6/60 1A31E
2N6760

Abstract: 2N6898 2N67 2N6759
Text: Standard Power MOSFETs 2N6759 , 2N6760 N-Channel Enhancement-Mode Power Field-Effect , Majority carrier device The 2N6759 and 2N6760 are n-channel enhancement-mode silicon-gate power , ENHANCEMENT MODE TERMINAL DESIGNATIONS DRAIN Absolut« Maximum Rating* Par am» 1er 2N6759 2N6760 Units , * (0.063 in. (1.6mm) from case for 10s> 6C 3-480 Standard Power MOSFETs 2N6759 , 2N6760 Electrical , ®VDSS Dra 2N6759 350 - - V VGS = 0 l0 * 1.0 mA 2N6760 400 - - V


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PDF 2N6759, 2N6760 2N6759 2N6760 TQ-204AA 2N6796 O-2I35AF O-205AF 2N6800 2N6898 2N67
Not Available

Abstract: No abstract text available
Text: , motor controls, and wide'-band and audio amplifiers. PRODUCT SUMMARY Part Number 2N6759 2N6760 , ° C id 2N6759 JAN, JANTX, & JANTXV 2N6760 -òr- Q , 2N6759 350* 350* 4.5* 3.0* 7.0 i2 0 m 75 , Breakdown Voltage Type 2N6759 2N6760 v GS(th) 'g s s f 'g s s r Gate Threshold Voltage Gate - Body Leakage Forward Gate - Body Leakage Reverse Zero Gate Voltage Drain Current A LL 2N6759 2N676Q R OS(on) Static Drain-Source On-State Resistance (7) R DS(on) Static Drain-Source On-State Resistance Q 2N6759 2N6760 2N6759


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PDF MIL-S-19500/542A
2N6760

Abstract: 2N67 2N6759
Text: Standard Power MOSFETs 2N6759 , 2N6760 N-Channel Enhancement-Mode Power Field-Effect , Majority carrier device The 2N6759 and 2N6760 are n-channel enhancement-mode silicon-gate power , ENHANCEMENT MODE TERMINAL DESIGNATIONS DRAIN Absolut« Maximum Rating* Par am» 1er 2N6759 2N6760 Units , * (0.063 in. (1.6mm) from case for 10s> 6C 3-480 Standard Power MOSFETs 2N6759 , 2N6760 Electrical , ®VDSS Dra 2N6759 350 - - V VGS = 0 l0 * 1.0 mA 2N6760 400 - - V


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PDF 2N6759, 2N6760 2N6759 2N6760 TQ-204AA 2N67
2N6759

Abstract: JANTX 2n
Text: , motor controls, and wide band and audio amplifiers. T~ 0 029 PRODUCT SUMMARY Part Number 2N6759 , -3 MECHANICAL SPECIFICATIONS 2N6759 JAN, JANTX, & JANTXV 2N6760-204AA (TO-3) 22 22 iQ B7S) MAX DIA 114310 , 2-52 _ UNITRODE 2N6759 JAN, JANTX, & JANTXV 2N6760 ABSOLUTE MAXIMUM RATINGS Parameter 2N , Capacitance Turn-On Delay Time Rise Time T u rn -O ff Delay Tim e Fall Time 2N6759 2N6760 2N6759 2N 6760 ALL , o dy Diode) Diode Forward Voltage '7". 2N 6759 2N 6760 2N6759 2N6760 2N6759 2N 6760 - 0 .70


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PDF MIL-S-19500/542A 2N6759 2N6760 JANTX 2n
Not Available

Abstract: No abstract text available
Text: 2N6759 Param eter 2 N 6760 400V vD S Drain sou rce voltage 350V Vjxsn D rain gate , 1 —4 S 4 1 EDITOR ñtt SEMELAB LTD 37E D 2N6759 2N6760 ■0133107 000D2ÔÔ b â , 0 Iq = 1 mA 4.0* All Ig s s r Test Conditions Units 2N6759 VGS(th) Id s s , . Rating, V q s * 0 All 0.2 4.0* mA V p g = Max. Rating, V q s * 0 T C = 1 2 5 'C 2N6759 , 2N6759 7.0* V V q s = *® ^ « I d “ ^*5A 2N6760 6.7* V v G s = 10 V . id -


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PDF Q0002Ã 2N6759 2N6760
2N6759

Abstract: N675
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6759 2N6760 4.5 and 5.5 AMPERE D c s ì ^ , O -2 04 A A MOTOROLA TMOS POWER MOSFET DATA L THERMAL CHARACTERISTICS 2N6759 , 60 E LE , 2N6759 2N6760 Pulsed S ource C urrent, Body Diode Forw ard Turn-O n Tim e Reverse Recovery Tim e 2N6759 2N6760 {Is =: Rated Is. V q s = 0) >SM Ion trr VSD 2N6759 2N6760 's - - - - iV d s Symboi Min Typ M ax Unit V BR|DSS) 2N6759 2N6760 !d s s 'g s s f 'g s s r - - - - 1.0* 4.0* 100* 100


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PDF 2N6759 2N6760 2N6760 19500/542A N675
2N6759

Abstract: No abstract text available
Text: Description The 2N6759 and 2N6760 are n-channel enhancement-mode siiicon-gate power field-effect transistors , Fall Time 2N6759 2N6760 2N6759 2N6760 2N6759 2N 6760 ALL ALL ALL ALL ALL ALL ALL A LL 3.0* 350* 50* 20 , 2N6760 2N6759 2N 6760 2N6759 2N 6760 Vr °R R Reverse Recovery Time Reverse Recovered Charge Pulte Test


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PDF T0-204AA 2N6760 2N6759 2N6760
gs 1117 ax

Abstract: 2N6759
Text: Drive Current Ease of Paralleling Excellent Temperature Stability Product Summary Part Number 2N6759 , Ratings Parameter D I 4 0 5 5 4 5 2 GGQT311 3 JANTXV-, JANTX-, 2N6760 and 2N6759 Devices 2N , -, JANTX-, 2N6760 and 2N6759 Devices H E D I fl I r | MÔS5452 0 0 0 1 3 1 2 80 jrt PULSE TEST S , Fig; 5-= Typical Saturation Characteristics. ( 2N6759 ) Fig. 6- Typical Saturation Characteristics , C T I F I E R 11E D | 4A 55 45 2 0 0 1 3 1 3 7 | JANTXV-, JANTX-, 2N6760 and 2N6759


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PDF MIL-S-19500/542 NTXV2N676Ü SINI6760 G-289 2N6760 2N6759 T-39-09 G-290 gs 1117 ax
Not Available

Abstract: No abstract text available
Text: 2N6759 350 - - V 2N 6760 400 - - V ALL 2 0* - 4 0* V Gate - , 2N6760 - 08 t 0* n V q s = 10V lD = 3 5 A 2N6759 - - 33* n V G S » 1 0 , Diode Ratings and Characteristics V SD 45* - - 55* 70 2N6759 Diode Forw ard , Saturation Characteristics ( 2N6759 ) I q . ORAIN CURRENT (AMPERES) V o S , D RAIN TO SOURCE VOLTAGE


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PDF 43D2H71 D05372S
2N6912

Abstract: 1N45 2N6917 STM15N45 STM-320 STM15N40/3 2N6759 MTM15N40 2N6761 2N6762
Text: SEMICONDUCTOR TECHNOLOGY OSE I) I fll3b4Sfl GDODSBO O HIGH VOLTAGE MOS POWER FIELD EFFECT TRANSISTORS (N-CHANNEL) T-^-o! 511 Continuous Drain-Source Gate Resistive Breakdown Current on Trans-Conductance Threshold Switching STI Tune Industry Voltage Id Resistance Voltage max @ CASE Oil 1 J|IO Type V/DDincc rDS (on) gfs VGS(th) Tj = 1U0 C '(DHJU&b rUntfel /At max min @ID @ IQ=1 mA •on toff ID (VUIISJ w (Ohms) (MhosRA) min/max (Volts) (ns) (ns) (A) 2N6759 2N6759 350 4.5 1.5 3.0 3.5


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PDF 2N6759 2N6760 2N6761 2N6762 2N6767 2N6912 1N45 2N6917 STM15N45 STM-320 STM15N40/3 MTM15N40
irf3203

Abstract: MTM12N20 MTM15N35 DJ05AH mtm5n35 IRF320 MTM5N20 MTM4N35 MTM3N35 MTM15N40
Text: 2N6759 4.5 1 2.5 MTM5N35 5 0.80 5 IRF343 8 125 0.55 IRF341 10 4 MTM8N35 8 150 0.4 8 IRF353


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PDF O-204AA MTM4N45 IRF443 IRF441 MTM7N45 IRF453 IRF451 MTM15N45 MTM3N40 IRF322 irf3203 MTM12N20 MTM15N35 DJ05AH mtm5n35 IRF320 MTM5N20 MTM4N35 MTM3N35 MTM15N40
Not Available

Abstract: No abstract text available
Text: NATL N-Channel Power MOSFETs N -C h a n n e l P o w e r Type No. IRF232 IRF233 IRF630 IRF631 IRF632 IRF633 MTP12N18 MTP12N20 9-16 2N6759 2N6760 IRF330 IRF331 IRF332 IRF333 IRF730 IRF731 MOSFETs (continued) Voss (V) Min 200 150 200 150 200 150 180 200 350 400 400 350 400 350 400 350 Tc SEMICOND CSM Sty)« TO-204AA (42) T 02 04A A (42) TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) 70220 (37) T0204AA (42) TO-204AA (42) T 02 04A A (42) T0-204AA (42) T 02 04A A (42) TO-204AA (42) T0


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PDF IRF232 IRF233 IRF630 IRF631 IRF632 IRF633 MTP12N18 MTP12N20 2N6759 2N6760
IRF3203

Abstract: MTM8P20 MTM12N20 DJ05AH MTM15N35 IRF322 IRF320 MTM15N40 MTM5N40 mtm5n35
Text: 2N6759 4.5 1 2.5 MTM5N35 5 0.80 5 IRF343 8 125 0.55 IRF341 10 4 MTM8N35 8 150 0.4 8 IRF353


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PDF O-204AA MTM4N45 IRF443 IRF441 MTM7N45 IRF453 IRF451 MTM15N45 MTM3N40 IRF322 IRF3203 MTM8P20 MTM12N20 DJ05AH MTM15N35 IRF320 MTM15N40 MTM5N40 mtm5n35
jfet selector guide

Abstract: T0-220SM
Text: SEMELAB pic Type_No SELECTOR GUIDE Technology Polarity MOS PRODUCTS Package VDSS RDSS_on ID Pd June 1998 Ver. 1.1 Ciss_pf Qg_nC Td_on Tr Td_off Tf 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6781 2N6781-SM 2N6781LCC4 2N6782 2N6782


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PDF 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 jfet selector guide T0-220SM
IRF9520 equivalent

Abstract: IRF9532 equivalent IRF9532 IRF9530 equivalent IRF9613 IRF9230 IRF9133 IRF9132 IRF9131 IRFF121
Text: N6758 200 0.4 TO-3 — — — 2N6759 350 1.5 TO-3 IRF333 — — 2N6760 400 1.0 TO-3 IRF330 — â


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PDF IRF9130 IRF9130* IRF9131 IRF9131 IRF9132 IRF9132 IRF9133 IRF9133 IRF9230 IRF9231 IRF9520 equivalent IRF9532 equivalent IRF9532 IRF9530 equivalent IRF9613 IRFF121
2N6764

Abstract: 2N6761 2N676 2N6759 2N6758 2N6757 2N6756 2N6755 2n6800 2N6767
Text: 800 450 150 25 TO-204AA 2N6759 ir n 350 ±20 4. 5 75 ±100 ±20 1000 350 2.0 4.0 1. 5 10 3 3.0 3


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PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-205AF 2N6798 2N6764 2N6761 2N676 2N6759 2n6800 2N6767
1N7000

Abstract: 1N7001 XTP4N80 IXTP4N90 IXTP4N80A 2N6755 2N6661 2N6660 1N6784 1N6660
Text: 200 ±20 9.0 75 ±100 ±20 1000 200 2 4 0.4 10 6 3.0 6.0 800 450 150 25 TO-204AA 2N6759 MOT N 350


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PDF XTP4N80 O-220 IXTP4N80A IXTP4N90 CASE79-05 2N6784 2N6788 1N7000 1N7001 2N6755 2N6661 2N6660 1N6784 1N6660
1N7001

Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 IXTP4N90A IXTP4N90 BUZ211 2N6823 2N6826
Text: 800 450 150 25 TO-204AA 2N6759 ir n 350 ±20 4. 5 75 ±100 ±20 1000 350 2.0 4.0 1. 5 10 3 3.0 3 , ±100 ±20 1000 200 2 4 0.4 10 6 3.0 6.0 800 450 150 25 TO-204AA 2N6759 MOT N 350 ±20 4.5 75 ±100 Â


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PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 IXTP4N90A IXTP4N90 BUZ211 2N6823 2N6826
2010 - GG 06

Abstract: VN35010
Text: MOSFETs Item Number Part Number Manufacturer V(BR)OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (5) Max (V) Ciss Max (F) tr Max (s) tf Max (8) Toper Max (OC) Package 5tyle N-Channel Enhancement-Type, (Co nt' d) UFN733 2N6759 SFN333 MTM5N35 MTM5N35 MTM5N35 MTP5N35 MTP5N35 MTP5N35 VN35010 UFN343 VN3501A VN3501A 2SK259H RRF331 RRF731 TX135 IRF731 IRFJ343 VN35000 VN35000 SGSP366 IRF741 IRF341 UFN341 VN3500A SGSP566 STM360 RFP7N35 RFM7N35 2SK277 2SK277


Original
PDF UFN733 2N6759 SFN333 MTM5N35 MTP5N35 VN35010 GG 06
2n6152

Abstract: 1N7000 2N676 2N61B 2N6757 2N6764 2N5184 2n6800 IXTP4N90 IXTP4N90A
Text: 800 450 150 25 TO-204AA 2N6759 ir n 350 ±20 4. 5 75 ±100 ±20 1000 350 2.0 4.0 1. 5 10 3 3.0 3 , ±100 ±20 1000 200 2 4 0.4 10 6 3.0 6.0 800 450 150 25 TO-204AA 2N6759 MOT N 350 ±20 4.5 75 ±100 Â


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PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N676 2N61B 2N6764 2N5184 2n6800 IXTP4N90 IXTP4N90A
irf532 equivalent

Abstract: irf530 equivalent VN64GA IRF9230 IRF9133 IRF9132 IRF9131 IRF9130 vn1200d irf9620
Text: N6758 200 0.4 TO-3 — — — 2N6759 350 1.5 TO-3 IRF333 — — 2N6760 400 1.0 TO-3 IRF330 — â


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PDF IRF9130 IRF9130* IRF9131 IRF9131 IRF9132 IRF9132 IRF9133 IRF9133 IRF9230 IRF9231 irf532 equivalent irf530 equivalent VN64GA vn1200d irf9620
2N7003

Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N676 2N6759 2N700S 2N6757 2N6756
Text: 800 450 150 25 TO-204AA 2N6759 ir n 350 ±20 4. 5 75 ±100 ±20 1000 350 2.0 4.0 1. 5 10 3 3.0 3


OCR Scan
PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-254AA 2N7003 2N7009 2N7011 2N7073 G50-12C1 2N676 2N6759 2N700S
IRF730 equivalent

Abstract: IRF730 equivalent data IRF9231 IRF9230 IRF9133 IRF9132 IRF9131 IRF9130 irf 730 IRF9613
Text: N6758 200 0.4 TO-3 — — — 2N6759 350 1.5 TO-3 IRF333 — — 2N6760 400 1.0 TO-3 IRF330 — â


OCR Scan
PDF IRF9130 IRF9130* IRF9131 IRF9131 IRF9132 IRF9132 IRF9133 IRF9133 IRF9230 IRF9231 IRF730 equivalent IRF730 equivalent data irf 730 IRF9613
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