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2n5555 Vgs(off) Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 2N5555

Abstract: No abstract text available
Text: °C) ID( off ) - - 10 2.0 nAdc µAdc IDSS 15 - mAdc VGS (f) - 1.0 Vdc , , ( , , VGS (on) = 0, VGS ( off ) = ­10 Vdc) (See Figure 1) 0 10 Vd ) (S Fi td(on) - 5.0 ns tr - 5.0 ns ( (VDD = 10 Vdc, ID(on) = 7.0 mAdc, , , VGS (on) = 0, VGS ( off ) = ­10 Vdc) (See , 1.0 k INPUT VGS (on) 90% 50% 10% 50% 10% INPUT PULSE RISE TIME VGS ( off ) INPUT , ON Semiconductort 1 DRAIN JFET Switching 2N5555 3 GATE N­Channel - Depletion 2


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PDF 2N5555 226AA) r14525 2N5555/D 2N5555
1997 - Diode Gfg 6f

Abstract: 2N5555 2N5555 equivalent
Text: Current (VDS = 12 Vdc, VGS = ­ 10 V, TA = 100°C) ID( off ) - - 10 2.0 nAdc µAdc IDSS , MHz) Crss - 1.2 pF (VDD = 10 Vdc, ID(on) = 7.0 mAdc, ( ) VGS (on) = 0, VGS ( off ) = ­10 , 10 Vdc, ID(on) = 7.0 mAdc, ( ) VGS (on) = 0, VGS ( off ) = ­10 Vdc) (See Figure 1) 0 10 Vd ) (S Fi , PULSE RISE TIME 50 OHM COAXIAL CABLE 1.0 k VGS (on) 90% 50% 10% VGS ( off ) INPUT PULSE , MOTOROLA Order this document by 2N5555 /D SEMICONDUCTOR TECHNICAL DATA JFET Switching


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PDF 2N5555/D 2N5555 226AA) Diode Gfg 6f 2N5555 2N5555 equivalent
2001 - 2n5555

Abstract: No abstract text available
Text: , VGS = –10 V, TA = 100°C) ID( off ) — — 10 2.0 nAdc µAdc IDSS 15 â , — 1.2 pF (VDD = 10 Vdc, ID(on) = 7.0 mAdc, ( , , VGS (on) = 0, VGS ( off ) = –10 Vdc , 10 Vdc, ID(on) = 7.0 mAdc, , , VGS (on) = 0, VGS ( off ) = –10 Vdc) (See Figure 1) 0 10 Vd ) (S Fi , % VGS ( off ) INPUT PULSE FALL TIME Rin = 50 OHMS 50 td(on) OUTPUT td( off ) 10% INPUT , ON Semiconductort 1 DRAIN JFET Switching 2N5555 3 GATE N–Channel — Depletion 2


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PDF 2N5555 226AA) r14525 2N5555/D 2n5555
2007 - 2N5555

Abstract: 2n5555 Vgs(off)
Text: Ambient 357 °C/W © 2007 Fairchild Semiconductor Corporation 2N5555 Rev. 1.0.0 www.fairchildsemi.com 1 2N5555 - N-Channel RF Amplifier May 2008 Symbol Parameter Test Condition Min. Max. Units Off Characteristics V (BR)GSS Gate-Source Breakdown Voltage IG = 10mA, VDS = 0 IGSS Gate Reverse Current VGS = 15V, VDS = 0, T = 25°C V GS( off ) Gate-Source , 2N5555 N-Channel RF Amplifier · This device is designed primarily for electronic switching


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PDF 2N5555 2N5555 2n5555 Vgs(off)
2001 - 2N5555

Abstract: 2n5555 datasheet 2n5555 Vgs(off)
Text: °C) ID( off ) - - 10 2.0 nAdc µAdc IDSS 15 - mAdc VGS (f) - 1.0 Vdc , , ( , , VGS (on) = 0, VGS ( off ) = ­10 Vdc) (See Figure 1) 0 10 Vd ) (S Fi td(on) - 5.0 ns tr - 5.0 ns ( (VDD = 10 Vdc, ID(on) = 7.0 mAdc, , , VGS (on) = 0, VGS ( off ) = ­10 Vdc) (See , SAMPLING SCOPE INPUT VGS (on) 90% 50% 10% 50% 10% INPUT PULSE RISE TIME VGS ( off , ON Semiconductort 1 DRAIN JFET Switching 2N5555 3 GATE N­Channel - Depletion 2


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PDF 2N5555 226AA) r14525 2N5555/D 2N5555 2n5555 datasheet 2n5555 Vgs(off)
2N5555

Abstract: 2N5555 equivalent S129 S219 S229 OPF-L 2N55551
Text: lD( off ) - - 10 2.0 nAdc pAdc IDSS 15 - mAdc VGS (f) - 1.0 Vdc , , VGS (on) = 0, VGS ( off ) = -10 Vdc) (See ~gUre 1) 1. Pulse Test Pulse Width c 300 ps, Duty Cycle< @ , N-Channel - Depletion 2N5555 1 DRAIN I 3 GATE @ i 2 SOURCE MHIMUM 1 RATINGS , VDG 25 Vdc Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc pD , ,:,.'*):;>P>,P>, , OFF CHARACTERISTICS ./. Breakdown Voltage (iG = 10 @de, VDS = O


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PDF 2N55551D 2N5555 2N5555 2N5555 equivalent S129 S219 S229 OPF-L 2N55551
2007 - Not Available

Abstract: No abstract text available
Text: 2N5555 N-Channel RF Amplifier • This device is designed primarily for electronic switching , Resistance, Junction to Ambient 357 °C/W © 2007 Fairchild Semiconductor Corporation 2N5555 Rev. 1.0.0 www.fairchildsemi.com 1 2N5555 — N-Channel RF Amplifier May 2008 Symbol Parameter Test Condition Min. Max. Units Off Characteristics V (BR)GSS Gate-Source Breakdown Voltage IG = 10mA, VDS = 0 IGSS Gate Reverse Current VGS = 15V, VDS = 0, T = 25Â


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PDF 2N5555 2N5555
2N5555

Abstract: 2N5555 equivalent 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5555 /D JFET S w itching , Temperature Range Storage Temperature Range Symbol Vd S VdG VGS 'GF Pd Tj Tstg Value 25 25 25 10 350 2.8 -6 5 , °C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate-Source Breakdown , s = 12 Vdc, Vq s = -1 0 V) (Vq s = 12 Vdc, Vq s = -1 0 V, Ta = 100°C) V(BR)GSS 'GSS 'D( off ) 25 - , CurrentO) (VDS =1 5 Vdc, VGS = 0) Gate-Source Forward Voltage (lQ(f) = 1 0 mAdc, V q s = 0) Drain-Source


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PDF 2N5555/D 2N5555 2N5555 equivalent 2N555
Not Available

Abstract: No abstract text available
Text: Range Symbol VDS Vd G vgs Value 25 25 25 10 350 2.8 -6 5 to +150 -6510+150 Unit Vdc Vdc Vdc mAdc , ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage (Iq = 10 (jAdc, Vd s = 0 , Resistance ( VGS = 0, Iq -0, f -1.0 kHz) Input Capacitance (Vq s = 15 Vdc- VGS = 0, f - 1.0 MHz) Reverse , 7-0 niAdc, v GS(on) = 0, VQS( off ) = -1 0 Vdc) (See Figure 1) *d(on) tr td( off ) tf - - 5.0 5.0 15 10 , SOURCE i " ' _ - vgs - ¡COMMON^ 6 - vds- * ^ +15 V C5 C6 C7 L1 Adjust V q s f ° r I q =


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PDF
U1994

Abstract: mpf102 equivalent 2N4416 MPF108 2N5668-70 2N4416A 2N5555 MPF102 MPF112 2N4416-16A
Text: Voltage -30 V IG-1 MA, VDS - 0 V 2N4416 A -35 2N4416A 1 C VGS ( off ) Gate-Source Cutoff Voltage -6 , Gate-Source Voltage z Vos-15 V Vgs -0 MsSf- 1 kHz VGS ( off ) ® ID " 1 "A _I_I_I_ Id - DRAIN CURRENT (mAI =vQS 1 -0 = kHí — \ Vgs ( off )- -4 v V6S off ) "" 2V , . \ y y y' * ' «0.9VDS- 15V rDS VGS f - 1 kHi MD ■100/jA, VQS'O off ) ««OS-15 V, lD" / 1 nA 240 8 VGS ( off ) - GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Common-Source


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PDF 2N4416. 2N4416A. Vqs-16 U1994 mpf102 equivalent 2N4416 MPF108 2N5668-70 2N4416A 2N5555 MPF102 MPF112 2N4416-16A
U1994

Abstract: MPF112 MPF108 jfet bf PN4416 MPF102 2N5668-70 2N5555 2N4416-16A 2N3966
Text: ) vs Gate-Source Voltage z Vos-15 V Vgs -0 MsSf- 1 kHz VGS ( off ) ® ID " 1 "A _I_I_I_ Id - DRAIN CURRENT (mAI =vQS 1 -0 = kHí — \ Vgs ( off )- -4 v V6S off ) "" 2V , off ) ««OS-15 V, lD" / 1 nA 240 8 VGS ( off ) - GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Common-Source Forward Transconductance vs Drain Current _ 10K|= vGS ( off ) ~ GATE-SOURCE CUTOFF VOLTAGE (VOLTS , -1.0 nA VGS =-15V,VDS = 0 2 BVqss Gate-Source Breakdown Vottage -30 V lG=-1 MA, VDS = 0 3 vGS


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PDF Vqs-16 U1994 MPF112 MPF108 jfet bf PN4416 MPF102 2N5668-70 2N5555 2N4416-16A 2N3966
MPF102 JFET

Abstract: MHO16 K1837 PN4416 MPF112 MPF108 MPF102 2N5668-70 2N5555 2N4416-16A
Text: -100 PA VGS - -20 V, VDS - 0 2 S -10 nA Ta - 100°C 3 1 A BVGSS Gate-Source Breakdown Voltage -30 V IQ =-1 MA, VDS = 0 4 T vGS ( off > Gate-Source Cutoff Voltage -6 V VDS - 15 V, lD = 1 nA 5 , ( off ) ® ID " 1 "A _I_I_I_ Id - DRAIN CURRENT (mAI =vQS 1 -0 = kHí — \ Vgs ( off )- -4 v , «0.9VDS- 15V rDS VGS f - 1 kHi MD ■100/jA, VQS'O off ) ««OS-15 V, lD" / 1 nA 240 8 VGS ( off , |= vGS ( off ) ~ GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Common-Source Output Conductance vs Drain Current


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PDF T0-92 Vqs-16 MPF102 JFET MHO16 K1837 PN4416 MPF112 MPF108 MPF102 2N5668-70 2N5555 2N4416-16A
MPF102 JFET

Abstract: TO-92 CASE U1994 2N5555 2N5668-70 2N4416-16A MPF108 MPF112 PN4416 2N3966
Text: , RL - 1.21K n VGS (on)=0. VGS ( off )=-10V 17 T C H *d( off ) Turn OFF Delay Time 15 18 «f Fall , ( off ) ® ID " 1 "A _I_I_I_ Id - DRAIN CURRENT (mAI =vQS 1 -0 = kHí — \ Vgs ( off )- -4 v , «0.9VDS- 15V rDS VGS f - 1 kHi MD ■100/jA, VQS'O off ) ««OS-15 V, lD" / 1 nA 240 8 VGS ( off , |= vGS ( off ) ~ GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Common-Source Output Conductance vs Drain Current , •gss Gate Reverse Current -1.0 nA VGS = -15V,VDS = 0 2 -0.2 WA Ta - lOO'C 3 'dgo Drain


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PDF Vqs-16 MPF102 JFET TO-92 CASE U1994 2N5555 2N5668-70 2N4416-16A MPF108 MPF112 PN4416 2N3966
mpf102 equivalent

Abstract: U1994 MPF*112 MPF112 K1837-18 2N5668-70 siliconix 2N5555 equivalent MPF108 MPF102
Text: Current (Note 1) -100 -100 PA VDS = 0, VQS = -20 V 2 A VGS ( off ) Gate Source Cutoff Voltage -2 -6 , Characteristics VGS - GATE-SOURCE VOLTAGE (VOLTS) vs Gate-Source Voltage z Vos-15 V Vgs -0 MsSf- 1 kHz VGS ( off ) ® ID " 1 "A _I_I_I_ Id - DRAIN CURRENT (mAI =vQS 1 -0 = kHí — \ Vgs ( off )- -4 v , VGS f - 1 kHi MD ■100/jA, VQS'O off ) ««OS-15 V, lD" / 1 nA 240 8 VGS ( off ) - GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Common-Source Forward Transconductance vs Drain Current _ 10K|= vGS ( off


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PDF Vqs-16 mpf102 equivalent U1994 MPF*112 MPF112 K1837-18 2N5668-70 siliconix 2N5555 equivalent MPF108 MPF102
MPF102

Abstract: U1994 MPF112 MPF108 J304-5 2N5668-70 2N5555 2N4416-16A 2N3966 MPF102 model
Text: Conditions 1 IGSS Gate Reverse Current -0.1 nA VGS " -20 v, VDs - 0 2 VGS ( off ) Gate-Source Cutoff , Rise Time 10.0 100 16 toff Turn OFF Time 30.0 100 ns VGS (on) " 0 See Circuit Below 17 c , (VOLTS) vs Gate-Source Voltage z Vos-15 V Vgs -0 MsSf- 1 kHz VGS ( off ) ® ID " 1 "A _I_I_I_ Id - DRAIN CURRENT (mAI =vQS 1 -0 = kHí — \ Vgs ( off )- -4 v V6S off , rDS VGS f - 1 kHi MD ■100/jA, VQS'O off ) ««OS-15 V, lD" / 1 nA 240 8 VGS ( off ) -


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PDF -55to 220S2 Vqs-16 MPF102 U1994 MPF112 MPF108 J304-5 2N5668-70 2N5555 2N4416-16A 2N3966 MPF102 model
U1897E

Abstract: U1899E uc251 2N4978 U1898E uc250 fn91 UC130 UC110 UC714E
Text: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number (TO) (pF) Min (V) Crss Max (pF) Vgs ( off ) Min (V) Vgs ( off ) Max (V) Idss Min (v) 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4856 2N4856A 2N4857 2N4857A 2N4858 2N4858A 2N4859 2N4859A 2N4860 2N4860A 2N4861 2N4861A 2N4977 2N4978 2N4979 2N5555 2N5638 2N5639 , 30 T T (on) ( off ) Max Max (nS) (nS) 20.0 30 80 25 35 60 20 20 20 9 8 10 10 20


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PDF 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 U1897E U1899E uc251 2N4978 U1898E uc250 fn91 UC130 UC110 UC714E
K304-18

Abstract: 2N5668-70 U1994 PN4416 MPF112 MPF108 MPF102 K305-18 2N5555 2N4416-16A
Text: -20 V 2 VGS ( off ) Gate Source Cutoff Voltage -2 -6 -0.5 -3 V VdS= 15 V, lD= 1 nA 3 T bvgss Gate , ( off ) ® ID " 1 "A _I_I_I_ Id - DRAIN CURRENT (mAI =vQS 1 -0 = kHí — \ Vgs ( off )- -4 v , «0.9VDS- 15V rDS VGS f - 1 kHi MD ■100/jA, VQS'O off ) ««OS-15 V, lD" / 1 nA 240 8 VGS ( off , |= vGS ( off ) ~ GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Common-Source Output Conductance vs Drain Current , 15 1 8 mA VDS= 15 V, VGS = 0 5 Ofs Common-Source Forward Transconductance (Note 2) 4,500 7,500 3


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PDF Vqs-16 K304-18 2N5668-70 U1994 PN4416 MPF112 MPF108 MPF102 K305-18 2N5555 2N4416-16A
2001 - BC237

Abstract: No abstract text available
Text: Current (VDS = 12 Vdc, VGS = ­ 10 V, TA = 100°C) V(BR)GSS IGSS ID( off ) 25 - - - - 1.0 10 2.0 Vdc nAdc , ) ( ) = 7.0 mAdc, VGS (on) = 0 0, VGS ( off ) = ­10 10 Vdc) Vd ) (See (S Figure Fi 1) (VDD = 10 Vdc, ID(on) ( ) = 7.0 mAdc, VGS (on) = 0 0, VGS ( off ) = ­10 10 Vdc) Vd ) (See (S Figure Fi 1) td(on) tr td( off ) tf - , SAMPLING SCOPE INPUT 50% 10% 90% 90% 50% 10% VGS (on) VGS ( off ) INPUT PULSE RISE TIME INPUT PULSE , DRAIN 2N5555 2 SOURCE MAXIMUM RATINGS Rating Drain ­ Source Voltage Drain ­ Gate Voltage Gate


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PDF 2N5555 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237
U1898E

Abstract: 2N4392 2N4391 2N4093 2N4092 2N4091 2N3972 2N3971 2N3970 2N3966
Text: -) Geometry •BVDgo or BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs ( off ) Min Max (V) Idss Min (mA) Max Igss or •Idgo Max (nA) R(on) Max (ohms) T(on) Max (nS) T( off ) Max (nS) 2N3824 72 FN3.6 50 6.0 3.0 - 8.0 , © •BVDgo or Igss or Case BVgss Ciss Crss Vgs ( off ) Idss •Idgo R(on) T(on) T( off ) Typ« Style , Igss or Case BVgss Ciss Crss Vgs ( off ) Idss •Idgo R(on) Td Tr Ts Tf Type Style Min Max , 20 — 40 2N4979 18 FN7.1 30 35.0 8.0 0.5 5.0 7.5 _ 0.50 40 _ 60 2N5555 92 FN2.5 25 5.0 1.2 â


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PDF 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4448 2N5432 U1898E 2N4392 2N4391
2N5640

Abstract: No abstract text available
Text: (on) = 0, VßS( off ) = - 10 Vdc) (See Figure 1) (V d d = 10 Vdc, lD(on) = 7-0 mAdc, VGS (on) = 0, VQS( off ) = -1 0 Vdc) (See Figure 1) ·d(on) tr *d( off ) tf - - - 5.0 5.0 15 10 ns ns ns ns rds(on) C|ss Crss , Ohms PF PF Symbol Min Max Unit Vdd = 10 Vdc, v GS(on) = 0. VGS ( off ) = -10 Vdc, R g ' = 50£î ·D , Temperature Range Symbol VDS VDG vgs Value 25 25 25 10 350 2.8 -6 5 to +150 -6 5 to +150 Unit Vdc Vdc , , VGS = -1 0 V, TA = 100°C) ON CHARACTERISTICS Zero-Gate-Voltage Drain CurrentO) (VDS = 15Vdc, Vq s = 0


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PDF b3b7255 2N5640
ATML U 106

Abstract: ATML 350 UC758 2N5902 TO-92 2N3070 ATML U 010 ATML U 2N3966 J2N5670 2N3687A
Text: _ - Crss Max (pF) _ Vgs ( off ) Min Max (V) lgss Max (nA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 , 1.5 1.5 1.5 2.5 2.5 2.5 1.2 1.2 1.2 1.2 2.0 2.0 Vgs ( off ) Min Max (V) 0.5 1.0 1.0 2.0 2.0 0.1 - , Vgs ( off ) Min Max (V) Igss or Idss ·Idgo Max Max Min (nA) (mA) _ -150 75 30 0.10 1.00 · .25 · .25 · , 8.0 8.0 8.0 8.0 8.0 8.0 8.0 5.0 5.0 5.0 3.0 3.0 3.0 3.0 3.0 3.0 1.0 4.0 7.0 7.0 4.0 Vgs ( off ) Min , Crss Max (pF) 20 20 20 20 15 15 15 Vgs ( off ) Min Max (V) 2.0 2.0 2.0 2.0 4.0 3.0 1.0 10.0 10.0 10.0


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PDF 2N3066 2N3067 2N3068 2N3069 2N3070 2N3071 2N3085 2N3087 2N3089 2N3089A ATML U 106 ATML 350 UC758 2N5902 TO-92 ATML U 010 ATML U 2N3966 J2N5670 2N3687A
kk3819

Abstract: kk4223
Text: Vgs ( off ) Min Max (V) 0.5 4.0 1.0 6.0 1.0 6.0 2.0 8.0 2.0 8.0 lgss Max (nA) 0.1 0.1 , Vgs ( off ) Min Max (V) _ 4.0 — 6.0 — 1.0 — 6.0 4.0 — _ 6.0 — 6.0 — 60.0 , 25.0 Crss Max (PF) 3.0 1.5 6.0 6.0 6.0 Vgs ( off ) Min Max (V) _ 8.0 6.0 4.0 10.0 , 18.0 18.0 18.0 Crss Max (pF) 8.0 8.0 8.0 8.0 8.0 Vgs ( off ) Min Max (V) 2.0 6.0 0.8 , €” Vgs ( off ) Min Max (V) 10.0 2.0 10.0 2.0 2.0 10.0 10.0 2.0 10.0 4.0 3.0 9.0 1.0 4.0


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PDF 2N3066 2N3067 2N3068 2N3069 2N3070 2N3071 2N3085 2N3087 2N3089 2N3089A kk3819 kk4223
IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 2n3819 replacement
Text: TYPE Number 19S00/ JAN JTX JTXV BVgss Min (V) Vgs ( off ) Min Max (V) - Idss Min Max (mA) R(on) Max , ) Crss Max (pF) Vgs ( off ) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max (mA) R(on) Max , (ItiNllKÄIL [ptU»®®!! [^©HAIMraHIL BVDgo or Case BVgss Ciss Crss Vgs ( off ) lgss Yls Idss , •BVDgo or BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs ( off ) Min Max (V) Max (nA) Yls Min Max , •BVDgo or Igss or Case BVgss Ciss Crss Vgs ( off ) Idss •Id go R(on) T(on) T( off ) Type Style


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PDF UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 2n3819 replacement
siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Text: /AvGS @ 1D - const Switching Times y VGS ( off ) Low Noise Low en , capacitance ■n =1 Reference Current Source Low 9oss.low vGS ( off ) • h'9h BVGSS Biasing , inter-relationships expressed in analytical form. USEFUL JFET PARAMETER RELATIONSHIPS (APPROX.) 9fso 'dss vGS ( off , ; typically = 2 for N-channel junction FET) 9fs 9fso <1 ' VGS vGS ( off ) ) Variation of gfs with gate bias 9fso Vip''DSS Variation of gfs with drain current vGS ( off ) 2 I DSS 9fso Gate-Source cutoff voltage in terms of


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PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
2N3456 equivalent

Abstract: TIS88A equivalent J411 fet 2n5952 equivalent fet 2N4304 2n3820 equivalent 2N5248 equivalent 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
Text: isv, v q s = o, f = im h z VdG = 10V, Id = 50,iA, f = 100Hz VGS ( off ) Crss Ciss -0.5 -2.0 0.8 , 100mV, Vqs = o Vds = 15V, Id = InA vds 9is IGSS rDS VGS ( off ) -5.0 100 -0.8 0.6 pA Q V pF pF , ( off ) VOLTS GATE SOURCE VOLTAGE ( VGS ) VOLTS NORMALIZED FORW ARD TRANSFER ADMITTANCE VS TEMPERATURE , rDS VGS ( off ) 150 -1.0 1.2 200 -3.0 2.0 4.5 Vds = 100mV, Vq s = 0 Vds = 15V, Id = InA Vds = , © < E DRAIN CURRENT lo(mA) GATE SOURCE CUTOFF VOLTAGE ( VGS off ) OUTPUT CHARACTERISTICS Iqss


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PDF 20x40 111x109 2N3456 equivalent TIS88A equivalent J411 fet 2n5952 equivalent fet 2N4304 2n3820 equivalent 2N5248 equivalent 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
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