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2n4401 configuration Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - Y3 SOT23

Abstract: SOT23 MARK Y3 TRANSISTOR 2N 4401 2n4401 2n4401 cross W3 marking SOT-223
Text: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 E SOT-23 Mark: 2X B NPN , °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4401 625 5.0 83.3 200 , 0.06." 2001 Fairchild Semiconductor Corporatio n 2N4401 /MMBT4401, Rev A 2N4401 / MMBT4401 , % 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical Characteristics 500 V CE = , VOLTAGE (V) 100 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical


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PDF 2N4401 MMBT4401 2N4401 OT-23 2N4401RM 2N4401RA O-92-3 AN-9006: Y3 SOT23 SOT23 MARK Y3 TRANSISTOR 2N 4401 2n4401 cross W3 marking SOT-223
2004 - PNP 2N4403

Abstract: 2N4401 2n4403 configuration 2N4403 2N4401 520 2n4401 configuration
Text: 2N4401 & 2N4403 General Purpose Switching Transistors Features: · NPN/PNP Silicon Planar , . 2N4401 NPN TO-92 2N4403 PNP Dimensions Minimum Maximum A 4.32 5.33 B 4.45 , 1.53 K 12.70 - L 1.982 2.082 Dimensions : Millimetres Pin Configuration 1 = Emitter 2 = Base 3 = Collector Page 1 31/05/05 V1.0 2N4401 & 2N4403 General Purpose Switching Transistors Absolute Maximum Ratings Parameters Symbol 2N4401 Collector Emitter Voltage VCEO


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PDF 2N4401 2N4403 2N4401 2N4403 PNP 2N4403 2n4403 configuration 2N4401 520 2n4401 configuration
2004 - 2N4401 NPN Switching Transistor

Abstract: 2N4401 NATIONAL SEMICONDUCTOR pin configuration transistor 2n4401 2N4401 VISHAY CONNECTORS 2N4401-BULK 2N4401-TAP 2N4403 MMBT4401 2n4401 configuration
Text: 2N4401 Vishay Semiconductors Small Signal Transistor (NPN) Features C 3 · NPN Silicon , configuration TO-18. · This transistor is also available in the SOT-23 case with the type designation MMBT4401 , Part Type differentiation 2N4401 Ordering code Remarks 2N4401 -BULK or 2N4401 -TAP Bulk , Document Number 85111 Rev. 1.2, 27-Oct-04 www.vishay.com 1 2N4401 Vishay Semiconductors , -Oct-04 2N4401 Vishay Semiconductors Duty cycle = 2 % 1 to 100 µs + 30 V 200 +16 V 1 k 0 C S


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PDF 2N4401 2N4403 OT-23 MMBT4401. 2N4401-BULK 2N4401-TAP D-74025 27-Oct-04 2N4401 NPN Switching Transistor 2N4401 NATIONAL SEMICONDUCTOR pin configuration transistor 2n4401 2N4401 VISHAY CONNECTORS 2N4401-TAP MMBT4401 2n4401 configuration
2004 - pin configuration transistor 2n4401

Abstract: 2N4401 NATIONAL SEMICONDUCTOR 2n4401 configuration 2N4401 - TRANSISTOR 2N4403 NATIONAL SEMICONDUCTOR
Text: 2N4401 Vishay Semiconductors Small Signal Transistor (NPN) Features · NPN Silicon Epitaxial , recommended. · On special request, this transistor is also manufactured in the pin configuration TO-18. · This , : BULK / 5 k per container 20 k/box TAP / 4 k per Ammopack 20 k/box Parts Table Part 2N4401 Type differentiation Ordering code 2N4401 -BULK or 2N4401 -TAP Remarks Bulk / Ammopack Absolute Maximum Ratings Tamb , Unit °C/W °C/W °C °C Document Number 85111 Rev. 1.2, 14-Oct-04 www.vishay.com 1 2N4401


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PDF 2N4401 2N4403 OT-23 MMBT4401. 2N4401 2N4401-BULK 2N4401-TAP D-74025 14-Oct-04 pin configuration transistor 2n4401 2N4401 NATIONAL SEMICONDUCTOR 2n4401 configuration 2N4401 - TRANSISTOR 2N4403 NATIONAL SEMICONDUCTOR
2004 - 2N4401 NATIONAL SEMICONDUCTOR

Abstract: pin configuration transistor 2n4401 2N4401 2N4401 transistor 2N4401-BULK 2N4401-TAP 2N4403 MMBT4401 2N4401 NPN Switching Transistor 2n4401 configuration
Text: 2N4401 VISHAY Vishay Semiconductors Small Signal Transistor (NPN) Features · NPN , configuration TO-18. · This transistor is also available in the SOT-23 case with the type designation MMBT4401 , Parts Table Part 2N4401 Type differentiation hFE, 100 to 300 @ 150 mA Ordering code Remarks 2N4401 -BULK or 2N4401 -TAP Bulk / Ammopack Absolute Maximum Ratings Tamb = 25 °C, unless otherwise , www.vishay.com 1 2N4401 VISHAY Vishay Semiconductors Electrical DC Characteristics Symbol Min


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PDF 2N4401 2N4403 OT-23 MMBT4401, 2N4401-BULK D-74025 01-Sep-04 2N4401 NATIONAL SEMICONDUCTOR pin configuration transistor 2n4401 2N4401 2N4401 transistor 2N4401-TAP MMBT4401 2N4401 NPN Switching Transistor 2n4401 configuration
2001 - Not Available

Abstract: No abstract text available
Text: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 E SOT-23 Mark: 2X B NPN , °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4401 625 5.0 83.3 200 , 0.06." 2001 Fairchild Semiconductor Corporatio 2N4401 /MMBT4401, Rev A 2N4401 / MMBT4401 , % 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical Characteristics 500 V CE = , VOLTAGE (V) 100 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical


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PDF 2N4401 MMBT4401 2N4401 OT-23 150or
2001 - 2n4401 331

Abstract: SOT-23 2N4401 2n4401 052 mark 2x sot 2N4401 CBVK741B019 F63TNR MMBT4401 PN2222N 2N4401 NPN Switching Transistor
Text: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X , Thermal Resistance, Junction to Ambient Max Units 2N4401 625 5.0 83.3 *MMBT4401 350 2.8 , Fairchild Semiconductor Corporation 2N4401 /MMBT4401, Rev A (continued) Electrical Characteristics , µA ICEX Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 2N4401 / MMBT4401 NPN , TEMPERATURE (° C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 2N4401 / MMBT4401 NPN General


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PDF 2N4401 MMBT4401 2N4401 OT-23 2n4401 331 SOT-23 2N4401 2n4401 052 mark 2x sot CBVK741B019 F63TNR MMBT4401 PN2222N 2N4401 NPN Switching Transistor
2008 - 2n4401 configuration

Abstract: 2N4401 2N4401 520 Power Bipolar Transistors 2N4401 TO-92 TE 901 "Bipolar transistors" ic 4066
Text: Pin Configuration : 1. Emitter 2. Base 3. Collector Page <1> 12/05/08 V1.1 2N4401 Low Power Bipolar Transistors Absolute Maximum Ratings Rating Symbol 2N4401 Collector-Emitter , 2N4401 Low Power Bipolar Transistors Features: · NPN Silicon Planar Epitaxial Transistors. · , Electrical Characteristics (Ta = 25°C unless otherwise specified) Characteristic Symbol 2N4401 , /08 V1.1 2N4401 Low Power Bipolar Transistors Electrical Characteristics (Ta = 25°C unless


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PDF 2N4401 2n4401 configuration 2N4401 2N4401 520 Power Bipolar Transistors 2N4401 TO-92 TE 901 "Bipolar transistors" ic 4066
2001 - SOT-23 2N4401

Abstract: 2N4401 transistor 2n4401 331 MMBT4401 TO-92 2N4401 CBVK741B019 F63TNR MMBT4401 PN2222N
Text: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X , Thermal Resistance, Junction to Ambient Max Units 2N4401 625 5.0 83.3 *MMBT4401 350 2.8 , Fairchild Semiconductor Corporation 2N4401 /MMBT4401, Rev A (continued) Electrical Characteristics , µA ICEX Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 2N4401 / MMBT4401 NPN , TEMPERATURE (° C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 2N4401 / MMBT4401 NPN General


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PDF 2N4401 MMBT4401 2N4401 OT-23 SOT-23 2N4401 2N4401 transistor 2n4401 331 MMBT4401 TO-92 CBVK741B019 F63TNR MMBT4401 PN2222N
Not Available

Abstract: No abstract text available
Text: 2N4400 / 2N4401 NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead , 2N4400 >20 >40 50 - 150 >20 UNITS V V V nA nA 2N4401 >20 >40 >80 100 - 300 >40 , India Limited Data Sheet Page 1 of 5 2N4400 / 2N4401 NPN SILICON PLANAR EPITAXIAL SWITCHING , Capacitance hie IC=1mA, VCE=10V, f=1KHz Input Inpedence 0.75 UNITS V V V V 2N4401 2N4400 , 2N4400_4401Rev_1 071105E Continental Device India Limited Data Sheet Page 2 of 5 -4 2N4400 / 2N4401


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PDF 2N4400 2N4401 C-120 4401Rev 071105E
2005 - 2N4400 2N4401

Abstract: 2N4400 2N4401 2n4401 amplifier 1-B215
Text: 2N4400 / 2N4401 NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead , >20 UNITS V V V nA nA 2N4401 >20 >40 >80 100 - 300 >40 *Pulse Test: Pulse Width , Page 1 of 5 2N4400 / 2N4401 NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic , =10V, f=1KHz MIN MAX 0.40 0.75 0.95 1.20 0.75 UNITS V V V V 2N4401 2N4400 >200 , Limited Data Sheet Page 2 of 5 2N4400 / 2N4401 TO-92 Plastic Package For Lead Free Parts


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PDF 2N4400 2N4401 C-120 4401Rev 071105E 2N4400 2N4401 2N4401 2n4401 amplifier 1-B215
2004 - 2N4403 NATIONAL SEMICONDUCTOR

Abstract: 2N4401 NATIONAL SEMICONDUCTOR
Text: VISHAY 2N4401 Vishay Semiconductors Small Signal Transistor (NPN) Features · NPN Silicon , configuration TO-18. · This transistor is also available in the SOT-23 case with the type designation MMBT4401 , -Aug-04 www.vishay.com 1 2N4401 Vishay Semiconductors Electrical DC Characteristics Parameter Collector - base , Document Number 85111 Rev. 1.2, 18-Aug-04 VISHAY 2N4401 Vishay Semiconductors Duty cycle = 2 % 1 , Time Document Number 85111 Rev. 1.2, 18-Aug-04 www.vishay.com 3 2N4401 Vishay Semiconductors


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PDF 2N4401 2N4403 OT-23 MMBT4401, D-74025 18-Aug-04 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR
1997 - Not Available

Abstract: No abstract text available
Text: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X , Corporation Max Units 2N4401 625 5.0 83.3 *MMBT4401 350 2.8 200 357 mW mW/°C °C , Current VCE = 35 V, VEB = 0.4 V 0.1 2N4401 / MMBT4401 NPN General Purpose Amplifier µA , -92 Tape and Reel Data TO-92 Packaging Configuration : Figure 1.0 TAPE and REEL OPTION FSCINT Label , Data, continued TO-92 Reeling Style Configuration : Figure 2.0 Machine Option “A” (H


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PDF 2N4401 MMBT4401 2N4401 OT-23 PN2222A
1996 - 2N4401

Abstract: 2n4401 motorola 2n4400 Diodes Inc. 2N4401 2n4400 motorola motorola 2n4401 charge 2n4401 06/2N4401 2N4401/QBF199
Text: Transistors NPN Silicon 2N4400 2N4401 * *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 , Device Data © Motorola, Inc. 1996 1 2N4400 2N4401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) hFE 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 VCE(sat) VBE(sat) 20 20 40 40 80 50 100 20 40 - , kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N4400 2N4401 hoe 2N4400 2N4401 hre


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PDF 2N4400/D 2N4400 2N4401* 226AA) 2N4400/D* 2N4401 2n4401 motorola Diodes Inc. 2N4401 2n4400 motorola motorola 2n4401 charge 2n4401 06/2N4401 2N4401/QBF199
2002 - ka7745

Abstract: EI-1614 xenon light source circuit diagram igbt xenon tube IC-276 3V to 300V dc dc converter xenon lamp design SGR20N40L SCR TRIGGER PULSE TRANSFORMER xenon strobe lamp
Text: Logic) + + + Circuit Configuration SCR Control 1 2 + Current Capacity · , 100K 3 H/V Det. R7 100 1 2 Q3 2N4401 Q4 2N4401 1 R3 33K 1 H/V OSC , < Timing Chart for Each Block> 2) Control Power Block Configuration Portable cameras and DSC use 3 V or , 3300P R6 1M BATT. 6V Q1 U3055L R16 22 R7 270K 1 3 2 Q4 2N4401 R14 100 , 1 C2 1 C1 u-COM or THRES OUT TRIG 3 Control Logic 5 3 5 Q3 2N4401


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PDF AN9006 ka7745 EI-1614 xenon light source circuit diagram igbt xenon tube IC-276 3V to 300V dc dc converter xenon lamp design SGR20N40L SCR TRIGGER PULSE TRANSFORMER xenon strobe lamp
2004 - 2N4401

Abstract: 2N4401RLRAG 2N4401RLRA 2N4401RLRM 2N4401RLRP 2N4401RLRPG 2N4401ZL1
Text: 2N4401 Preferred Device General Purpose Transistors NPN Silicon Features http , . © Semiconductor Components Industries, LLC, 2004 June, 2004 - Rev. 1 1 Publication Order Number: 2N4401 /D 2N4401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic , %. http://onsemi.com 2 2N4401 ORDERING INFORMATION Package Shipping 2N4401 TO-92 5,000 , http://onsemi.com 3 300 500 2N4401 100 100 IC/IB = 10 70 70 50 50 20


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PDF 2N4401 2N4401/D 2N4401 2N4401RLRAG 2N4401RLRA 2N4401RLRM 2N4401RLRP 2N4401RLRPG 2N4401ZL1
2000 - ka7745

Abstract: 3V to 300V dc dc converter xenon light source circuit diagram EI-1614 igbt xenon tube control light intensity using SCR AN9006 EI 33 transformer SCR TRIGGER PULSE TRANSFORMER SGR20N40L
Text: directly operated from Logic) + + + Circuit Configuration SCR Control 1 2 + , . Q5 2N4403 R8 100K 3 H/V Det. R7 100 1 2 Q3 2N4401 Q4 2N4401 1 R3 , Input TP B : Xe-Lamp Trigger < Timing Chart for Each Block> 2) Control Power Block Configuration , 1 3 2 Q4 2N4401 R14 100 C13 10u Q6 SGR20N40L 1 + R13 100 2 Q5 2N4403 , Logic 5 3 5 Q3 2N4401 KA555 DIS CON 2 C6 2 3 CON R5 180 IC2 7


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PDF AN9006 ka7745 3V to 300V dc dc converter xenon light source circuit diagram EI-1614 igbt xenon tube control light intensity using SCR AN9006 EI 33 transformer SCR TRIGGER PULSE TRANSFORMER SGR20N40L
2010 - Not Available

Abstract: No abstract text available
Text: 2N4401 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free , DIAGRAM 2N 4401 AYWW G G 2N4401 = Device Code A = Assembly Location Y = Year WW = Work Week , Industries, LLC, 2010 February, 2010 − Rev. 4 1 Publication Order Number: 2N4401 /D 2N4401 , / Tape & Ammo Box TO−92 (Pb−Free) 2000 / Tape & Ammo Box Device 2N4401 2N4401G , . http://onsemi.com 2 2N4401 SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V + 30 V 1.0 to


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PDF 2N4401 2N4401/D
2005 - 2N4401 NPN Switching Transistor

Abstract: 2n4401 data sheet transistor 2n4401 datasheet 2N4401RLRAG 2N4401G Transistor 2N4401 2N4401 66 4401 AYWW marking code IC charge 2n4401
Text: 2N4401 Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com , may occur and reliability may be affected. MARKING DIAGRAM 2N 4401 AYWW G G 2N4401 = , . Publication Order Number: 2N4401 /D 2N4401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , %. http://onsemi.com 2 2N4401 ORDERING INFORMATION Package Shipping TO-92 5,000 Units , -92 2000 / Ammo Pack TO-92 (Pb-Free) 2000 / Ammo Pack Device 2N4401 2N4401G 2N4401RLRA


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PDF 2N4401 2N4401/D 2N4401 NPN Switching Transistor 2n4401 data sheet transistor 2n4401 datasheet 2N4401RLRAG 2N4401G Transistor 2N4401 2N4401 66 4401 AYWW marking code IC charge 2n4401
2007 - 2N4401G

Abstract: 2N4401RLRAG 2N4401 2N4401RLRA 2N4401RLRMG 2N4401RLRP 2N4401RLRPG
Text: 2N4401 Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com , 2N4401 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note , value. Publication Order Number: 2N4401 /D 2N4401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , Device 2N4401 2N4401G 2N4401RLRA 2N4401RLRP 2N4401RLRPG For information on tape and reel , Specifications Brochure, BRD8011/D. http://onsemi.com 2 2N4401 SWITCHING TIME EQUIVALENT TEST CIRCUITS


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PDF 2N4401 2N4401/D 2N4401G 2N4401RLRAG 2N4401 2N4401RLRA 2N4401RLRMG 2N4401RLRP 2N4401RLRPG
2001 - 2N4401

Abstract: No abstract text available
Text: ON Semiconductort General Purpose Transistors 2N4401 NPN Silicon ON Semiconductor , . © Semiconductor Components Industries, LLC, 2001 June, 2001 ­ Rev. 0 1 Publication Order Number: 2N4401 /D 2N4401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol , Time Figure 2. Turn­Off Time http://onsemi.com 2 200 CS* < 10 pF 2N4401 TRANSIENT , Figure 8. Fall Time http://onsemi.com 3 300 500 2N4401 SMALL­SIGNAL CHARACTERISTICS NOISE


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PDF 2N4401 226AA) r14525 2N4401/D 2N4401
2001 - 2N4401

Abstract: 2N4401TAR 2n4401 amplifier 2N4401 FAIRCHILD J60Z SOT-23 2N4401
Text: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 E SOT-23 Mark: 2X B NPN , °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4401 625 5.0 83.3 200 , 0.06." 2001 Fairchild Semiconductor Corporatio n 2N4401 /MMBT4401, Rev A 2N4401 / MMBT4401 , % 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical Characteristics 500 V CE = , VOLTAGE (V) 100 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical


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PDF 2N4401 MMBT4401 2N4401 OT-23 150ct O-92-3 AN-9006: 2N4401BU 2N4401TAR 2n4401 amplifier 2N4401 FAIRCHILD J60Z SOT-23 2N4401
1996 - 2N4400

Abstract: 2n4401 motorola 2N4401 2n4400 motorola charge 2n4401
Text: Transistors 2N4400 2N4401 * NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 , Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N4400 2N4401 ELECTRICAL , ON CHARACTERISTICS(1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N4401 hFE 20 - - (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N4400 2N4401 20 40 - - (IC = 10 mAdc, VCE = 1.0 Vdc) 2N4400 2N4401 40 80 - - (IC = 150 mAdc, VCE = 1.0 Vdc) 2N4400 2N4401


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PDF 2N4400/D 2N4400 2N4401* 226AA) 2N4400/D* 2N4400 2n4401 motorola 2N4401 2n4400 motorola charge 2n4401
2010 - 2N4401

Abstract: 2N4401G 2N4401RLRAG 2N4401RLRA 2N4401RLRMG 2N4401RLRP 2N4401RLRPG 2n 4401
Text: 2N4401 General Purpose Transistors NPN Silicon http://onsemi.com Features · Pb-Free , Conditions may affect device reliability. MARKING DIAGRAM 2N 4401 AYWW G G 2N4401 = Device Code , Publication Order Number: 2N4401 /D 2N4401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , Ammo Box Device 2N4401 2N4401G 2N4401RLRA 2N4401RLRP 2N4401RLRPG For information on tape , Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 2N4401 SWITCHING TIME EQUIVALENT


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PDF 2N4401 2N4401/D 2N4401 2N4401G 2N4401RLRAG 2N4401RLRA 2N4401RLRMG 2N4401RLRP 2N4401RLRPG 2n 4401
2004 - 2N4401

Abstract: Diodes Inc. 2N4401
Text: 2N4401 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N4401 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N4401 at our online store! 2N4401 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N4401 Information Did you Know , for Parts Request a Quote Test Houses 2N4401 Specifications Military/High-Rel : N V(BR)CEO (V


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PDF 2N4401 2N4401 Houses15n STV3208 LM3909N Diodes Inc. 2N4401
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