The Datasheet Archive

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Part Manufacturer Description Datasheet Download Buy Part
LTC6244HMS8#TRA1PBF Linear Technology Dual 50MHz, Low Noise, Rail-to-Rail, CMOS Op Amp
LT1012MJ8 Linear Technology LT1012 - Picoamp Input Current, Microvolt Offset, Low Noise Op Amp; Package: CERDIP; Pins: 8; Temperature: Military
LT1763MPDE-1.5 Linear Technology LT1763 - 500mA, Low Noise, LDO Micropower Regulators; Package: DFN; Pins: 12; Temperature Range: -55°C to 125°C
LTC3260IDE#TRPBF Linear Technology LTC3260 - Low Noise Dual Supply Inverting Charge Pump; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC6655BHMS8-3#PBF Linear Technology LTC6655 - 0.25ppm Noise, Low Drift Precision References; Package: MSOP; Pins: 8; Temperature Range: -40°C to 125°C
LTC6655CHMS8-2.048#PBF Linear Technology LTC6655 - 0.25ppm Noise, Low Drift Precision References; Package: MSOP; Pins: 8; Temperature Range: -40°C to 125°C

2n3866 noise Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BFR90 transistor

Abstract: 2n5583 mrf502 transistor 2N5160 transistor bfr96 MRF531 BFR91 BFR91 transistor 2N3866 2N5032
Text: Package 106-175 MHz, VHF AM TRANSISTORS f 2N3866 1.0 10 28 TO-39 N 2N3553 2.5 10 28 TO-39 2N5641 , J 225-400 MHz, UHF AM TRANSISTORS MRF509 1.0 10 28 207A-01 2N3866 1.0 10 28 TO-39 MRF313 1.0 16 , Conditions Device Type f MHz Vcc Volts out mW Typ* Min. H MHz Typ* Min. Package 2N3866 2N5179 , noise performance. Devices listed in the matrix are classified according to noise figure performance , PNP NPN 0.8 MRF502 MRF502 MRF502 2N5160 2N3866 2N5160 2N3866 2N5160 2N4428 2N5583 PNP NPN 0.6 MRF501


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PDF 2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 BFR90 transistor 2n5583 mrf502 transistor 2N5160 transistor bfr96 MRF531 BFR91 BFR91 transistor 2N5032
uhf amplifier design BFR90

Abstract: 2N3866 MOTOROLA 2n5160 MRF531 MRF306 2n5583 MOTOROLA 2N5179 2n5179 MRF905 BFR91
Text: Package 106-175 MHz, VHF AM TRANSISTORS f 2N3866 1.0 10 28 TO-39 N 2N3553 2.5 10 28 TO-39 2N5641 , J 225-400 MHz, UHF AM TRANSISTORS MRF509 1.0 10 28 207A-01 2N3866 1.0 10 28 TO-39 MRF313 1.0 16 , Conditions Device Type f MHz Vcc Volts out mW Typ* Min. H MHz Typ* Min. Package 2N3866 2N5179 , noise performance. Devices listed in the matrix are classified according to noise figure performance , PNP NPN 0.8 MRF502 MRF502 MRF502 2N5160 2N3866 2N5160 2N3866 2N5160 2N4428 2N5583 PNP NPN 0.6 MRF501


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PDF 2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 uhf amplifier design BFR90 2N3866 MOTOROLA 2n5160 MRF531 MRF306 2n5583 MOTOROLA 2N5179 2n5179 MRF905 BFR91
2N3866 MOTOROLA s parameters

Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 2N3553 motorola MRF536 Transistor 2N3866 TO205AD
Text: switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , combinations. 1 2N3866 , 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -39 2N5108 1680 20 300 1400 TO-39 2N3866 400 15 1000 1000 TO-39 'Typical Low-Noise Transistors The low-noise devices listed are produced with carefully controlled r^' and fj to optimize device noise performance. Devices listed in the matrix are classified according to noise figure performance versus


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PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 2N3866 MOTOROLA s parameters 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 2N3553 motorola MRF536 Transistor 2N3866 TO205AD
MOTOROLA 2N5179

Abstract: 2N5160 BFR96 MRF531 MM4049 MRF911 2N4957 BFR90 MOTOROLA 2N5583 2N5032
Text: optimize device noise performance. Devices listed in the matrix are classified according to noise figure , PNP NPN 0.8 MRF502 MRF502 MRF502 2N5160 2N3866 2N5160 2N3866 2N5160 2N4428 2N5583 PNP NPN 0.6 MRF501 MRF501 MRF501 2N3866 2N4073 MM4019 2N3553 MM4019 2N3553 PNP NPN 0.5 V MRF532* MRF531 * MRF532 , MHz Min. Typ* Noise Figure Distortion Specifications Package Max. or / Freq. Typ* MHz 2 nd , . r Device Type Gain 40-300 MHz Min. Typ Maximum Distortion Specifications Noise Figure^ Output


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PDF 2N5829 2N5031 MRF904 2N4957 2N5032 MOTOROLA 2N5179 2N5160 BFR96 MRF531 MM4049 MRF911 BFR90 MOTOROLA 2N5583
1996 - 2n3866

Abstract: 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427
Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N3866 ; 2N4427 Silicon planar epitaxial overlay , transistors 2N3866 ; 2N4427 DESCRIPTION APPLICATIONS NPN overlay transistors in TO-39 metal , 2N3866 - 3.5 V 2N4427 - 2.0 V - 0.4 A 2N3866 2N4427 VCEO collector-emitter voltage open base 2N3866 2N4427 VEBO emitter-base voltage open collector IC , ) 2N3866 400 28 1 >10 >45 2N4427 175 12 1 >10 >50 1995 Oct 27 2


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PDF 2N3866; 2N4427 SC08a O-39/1 2n3866 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427
rca 2n3375

Abstract: TA7403 rca power transistor RCA Transistors 2N2876 CD2152 RCA RF POWER TRANSISTOR 40280 40281 RCA TO60 TRANSISTORS
Text: € capability (up to 16 outputs) high noise immunity 40% of logic swing x- and y-select drivers, write and , ) propagation delay (1 -f-1 OpF) ■7.3 ns (typ) propagation delay (6-|-60pF) ■noise immunity 4 0 % of , ■High noise immunity 1.2 volts (typ) @ 25°C ■3.8 - 6.3V power supply NAND Logic Dual 4 , – ultra-low quiescent power dissipation 4-volt noise margin —55°C to + 1 2 5 °C operation fanouts > 5 0 , (typ) noise immunity @ 25°C Description and pull-up resistance Series in Flat Pack ( - 55Â


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PDF 000-Series 2N1492 RCA-CA3000 RFT-700E/2L 1076R5 rca 2n3375 TA7403 rca power transistor RCA Transistors 2N2876 CD2152 RCA RF POWER TRANSISTOR 40280 40281 RCA TO60 TRANSISTORS
mrf502 gold transistor

Abstract: Motorola transistors MRF630 2N3948 transistor 2n4959 MRF536 MRF525 MRF931 MRF2369 BFR96 MRF911
Text: switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , combinations. 1 2N3866 , 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -39 MRF227* 225 0.13 3.0 13.5 12.5 TO-39 MRF525* 400 0.001 0.02 13.0 26.0 TO-39 2N3866 400 0.1 1.0 10.0 , the appropriate preceding tables. TO-39 METAL CAN Gain -BW Noise Figure Gain Maximum Ratings , -BW Noise Figure Gian Maximum Ratings h 'c NF f 'C dB f 'C PT Device Type GHz mA dB MHz mA


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PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 mrf502 gold transistor Motorola transistors MRF630 2N3948 transistor 2n4959 MRF536 MRF525 MRF931 MRF2369 BFR96 MRF911
2N3866

Abstract: 2n4427 philips ferroxcube 4312 020 36690 2N3866 class-a Transistor 2N3866 2N3866 metal Philips 4312 020 4312 020 36640 transistor 2N4427 2N3866 application
Text: ■bb53131 0Q217Ö1 bQE «APX N AMER PHILIPS/DISCRETE bTE P 2N3866 2N4427 SILICON PLANAR , v.h.f. and u.h.f. equipment. QUICK REFERENCE DATA Collector-emitter voltage Rbe = 10 fi 2N3866 , . performance type number f (MHz) VCE (V) Po 2N3866 400 28 1 > 10 > 45 2N4427 175 12 1 , Respective Manufacturer AMER PHILIPS/DISCRETE 2N3866 2N4427 A blE D ^53^31 002^762 54^ HAPX RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) 2n3866 2n4427


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PDF bb53131 0Q217Ã 2N3866 2N4427 bb53T31 2n4427 philips ferroxcube 4312 020 36690 2N3866 class-a Transistor 2N3866 2N3866 metal Philips 4312 020 4312 020 36640 transistor 2N4427 2N3866 application
2n4427

Abstract: 2N3866
Text: 2N3866 ; 2N4427 APPLICATIONS DESCRIPTION NPN overlay transistors in TO-39 metal packages with the , collector-emitter voltage open base 2N3866 2N4427 emitter-base voltage VEBO UNIT R B E=10ii 2N3866 VCEO MAX. open collector 2N3866 Ic 2N4427 collector current (DC) lc(AV , RF performance TYPE NUMBER f (MHz) VCE (V) Po (W) Gp (dB) 11 (%) 2N3866 , SYMBOL VCBO PARAMETER collector-base voltage 2N3866 CONDITIONS MIN. open emitter 55


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PDF 2N3866; 2N4427 O-39/1 2N3866 2n4427 2N3866
2003 - 2N3866A

Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N3866 Transistor 2N3866 for transistor bfr96 RF 2N3866 2N6255 data 2n3866 MRF553 MRF607
Text: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon , Thermal Data P D Total Device Dissipation Derate above 25º C 2N3866 .PDF 10-28-02 Advanced , contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N3866 , , VCE = 5.0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A Collector-Emitter Saturation Voltage , , IE = 0, f = 1.0 MHz) 2N3866 2N3866A Typ. Max. Unit 500 800 800 - - MHz


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PDF 2N3866 2N3866A To-39 28Vdc MRF555 2N4427 MRF4427, 2N3866A RF NPN POWER TRANSISTOR 1000 WATT Transistor 2N3866 for transistor bfr96 RF 2N3866 2N6255 data 2n3866 MRF553 MRF607
2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters 2n5179 npn UHF transistor 2N5179 10 GHz PNP transistor 2N2857 MOTOROLA MOTOROLA 2N5179 RF POWER TRANSISTOR NPN, motorola 2n2857 2n4957
Text: switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , combinations. 1 2N3866 , 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -39 2N5108 1680 20 300 1400 TO-39 2N3866 400 15 1000 1000 TO-39 'Typical Low-Noise Transistors The low-noise devices listed are produced with carefully controlled r^' and fj to optimize device noise performance. Devices listed in the matrix are classified according to noise figure performance versus


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PDF 17A-01 05A-01 2N5829 2N5031 MRF904 MRF571 RF572/M RF2369 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters 2n5179 npn UHF transistor 2N5179 10 GHz PNP transistor 2N2857 MOTOROLA MOTOROLA 2N5179 RF POWER TRANSISTOR NPN, motorola 2n2857 2n4957
MRF536

Abstract: MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA MRF229 MRF227 s-parameter 2N4427 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters MRF237
Text: switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , combinations. 1 2N3866 , 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -39 MRF227* 225 0.13 3.0 13.5 12.5 TO-39 MRF525* 400 0.001 0.02 13.0 26.0 TO-39 2N3866 400 0.1 1.0 10.0 , -205AD 2N5160f 1.0 0.16 8.0 28 TO-205AD 2N3866 1.0 0.1 10 28 TO-205AD MRF313 1.0 0.03 15 28 305A-01


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PDF 17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 MRF536 MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA MRF229 MRF227 s-parameter 2N4427 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters MRF237
2N3866

Abstract: zetex ztx327 2N2708 Zetex bfy90 ZT91 P039 BSY55 BFY90 2N918 2N4427
Text: range of Zetex RF Products. Device Type vcb0 VcEO Min. fT at Max. Noise Figure at Cobo or cre Max. pF hfe at P,ot Gpe Package Type V V MHz mA N dB le mA f MHz Min. Max. lc mA mW dB 2N3866 55 30 , frequency applications where high fT, low noise and low intermodulation distortion features are required , access products, and oscilloscopes. Device Type VCBO V Vceo V Min. fT at Max. noise figure at Cobo or , 2N3866 55 30 200 25 - - - 3.0 15 200 50 1000 8.5 TO-39 ZTX327 55 30 500 25 - - - 3.0 15 - 50 1000 8.5


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PDF 2N3866 2N4427 2N2708 2N918 BFY90 OT-23 ZTX325 zetex ztx327 Zetex bfy90 ZT91 P039 BSY55
2013 - Not Available

Abstract: No abstract text available
Text: 2N3866 (A)UB Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N3866 (A) silicon VHF-UHF amplifier , http://www.microsemi.com. FEATURES • JEDEC registered 2N3866 number • JAN, JANTX , high-reliability applications Also available in: TO-205AD (TO-39) package (leaded) 2N3866 (A) MAXIMUM , : www.microsemi.com T4-LDS-0175-1, Rev. 1 (8/30/13) ©2013 Microsemi Corporation Page 1 of 4 2N3866 (A)UB


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PDF 2N3866 MIL-PRF-19500/398 O-205AD T4-LDS-0175-1,
2013 - 2N3866 JANTXV

Abstract: 2N3866A JAN
Text: 2N3866 (A) Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N3866 (A) silicon VHF-UHF amplifier , ://www.microsemi.com. FEATURES TO-205AD • JEDEC registered 2N3866 number • JAN, JANTX, JANTXV and , ) 2N3866 (A)UB Short leaded TO-205AD package Lightweight Military and other high-reliability , -0175, Rev. 2 (8/30/13) ©2013 Microsemi Corporation Page 1 of 4 2N3866 (A) MECHANICAL and


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PDF 2N3866 MIL-PRF-19500/398 O-205AD T4-LDS-0175, 2N3866 JANTXV 2N3866A JAN
2n4427

Abstract: 2N3866 Transistor 2N3866 2N3866 metal Philips 4312 020 2N3866 RF CLASS A RF 2N3866 2N3866 class-a 2n3866 philips PHILIPS 4312 amplifier
Text: b5E D 711Dfl2b 00L3b7fl CHG ■PHIN PHILIPS INTERNATIONAL 2N3866 2N4427 SILICON PLANAR , v.h.f. and u.h.f. equipment. QUICK REFERENCE DATA R.F. performance Collector-emitter voltage 2N3866 , . 500 500 MHz type number f (MHz) VCE (V) Po (W) Gp (dB) V <%) 2N3866 400 28 1 > 10 >45 2N4427 175 12 , Respective Manufacturer 2N3866 2N4427 bSE D 711DÖSb □Dt.3t.7c] T27 IPHIN PHILIPS INTERNATIONAL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) 2N3866 2N4427


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PDF 711Dfl2b 00L3b7fl 2N3866 2N4427 2N3866 711002b 00b3bà 2n4427 Transistor 2N3866 2N3866 metal Philips 4312 020 2N3866 RF CLASS A RF 2N3866 2N3866 class-a 2n3866 philips PHILIPS 4312 amplifier
RF Transistors

Abstract: 2N2708 2N3866 2N918 2N4427 2N4036 2N2102 Transistor 2N3866 ZTX327 BF197P
Text: Ferranti high frequency transistors. Type VCB V VcEO V Max. hpe at fT Min. at Noise Figure at Cobo Max , ) Package Vcbo Volts Vceo Volts Vcc Volts Pout Watts Pg dB Fo MHz 2N3866 55 30 28.0 0.7 8.5 400 TO , Volts Volts Watts dB MHz ZTX327 55 30 12.0 0.35 6.4 400 E-line 2N3866 55 30 28.0 0.7 8.5 400 TO


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PDF 2N918 2N2708 fSOT-23 \sOT-23 BF196Pf 100MHz BF197P5 BF196P ZTX327 RF Transistors 2N3866 2N4427 2N4036 2N2102 Transistor 2N3866 BF197P
2009 - RF 2N3866

Abstract: 2N3866 2N3866A Transistor 2N3866 MRF607 MRF553 MRF4427 2N6255 2N5179 2N4427
Text: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon , our web site at www.microsemi.com or contact our factory direct. 2N3866 / 2N3866A ELECTRICAL , (sat) DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) Both (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866 , ) 2N3866 2N3866A Typ. Max. Unit 500 800 800 - - MHz - 2.8 3.5 pF Rev , . 2N3866 / 2N3866A FUNCTIONAL Symbol Test Conditions Value Min. GPE Pout Power Gain


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PDF 2N3866 2N3866A To-39 28Vdc Volta15 RF 2N3866 2N3866A Transistor 2N3866 MRF607 MRF553 MRF4427 2N6255 2N5179 2N4427
2N3866 equivalent

Abstract: 2n3866a
Text: Qualified per MIL-PRF-19500/398 DEVICES LEVELS 2N3866 2N3866A 2N3866UB 2N3866AUB JAN JANTX , Power Dissipation @ TA = +25°C 2N3866 , A 2N3866UB / AUB Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to-Case TO-39 (TO-205AD) 2N3866 , 2N3866A NOTE: 1. Derate linearly 5.71mW/°C ( 2N3866 , 2N3866A) and 3.08mW/°C (2N3866UB / 2N3866AUB) above TA > +25°C 2 , ¼Adc, VCE = 5.0Vdc IC = 360mAdc, VCE = 5.0Vdc 2N3866 , 2N3866UB 2N3866A, 2N3866AUB 2N3866 , 2N3866UB


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PDF MIL-PRF-19500/398 2N3866 2N3866A 2N3866UB 2N3866AUB T4-LDS-0175 2N3866 equivalent 2n3866a
2010 - 2N3866 equivalent

Abstract: 2N3866 2N3866A 2N3866 JANTX 2N3866 JAN 2N3866AUB Transistor 2N3866 2N3866UB 2N3866 JANTXV
Text: Qualified per MIL-PRF-19500/398 DEVICES LEVELS 2N3866 2N3866A 2N3866UB 2N3866AUB JAN JANTX , Power Dissipation @ TA = +25°C 2N3866 , A 2N3866UB / AUB Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to-Case TO-39 (TO-205AD) 2N3866 , 2N3866A NOTE: 1. Derate linearly 5.71mW/°C ( 2N3866 , 2N3866A) and 3.08mW/°C (2N3866UB / 2N3866AUB) above TA > +25°C 2. TA = room , , VCE = 5.0Vdc 2N3866 , 2N3866UB 2N3866A, 2N3866AUB 2N3866 , 2N3866UB hFE 2N3866A, 2N3866AUB


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PDF MIL-PRF-19500/398 2N3866 2N3866A 2N3866UB 2N3866AUB T4-LDS-0175 2N3866 equivalent 2N3866 2N3866A 2N3866 JANTX 2N3866 JAN 2N3866AUB Transistor 2N3866 2N3866UB 2N3866 JANTXV
t 3866 power transistor

Abstract: transistor 3866 s t 3866 transistor transistor 3866
Text: ■bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D , pre-driver stages in v.h.f. and u.h.f. equipment. Q U IC K R E F E R E N C E D A T A 2N3866 Collector-em , *T min. 500 500 M Hz R.F. performance type number 2N3866 2N4427 f (MHz) V C E , values in accordance w ith the A b s o lu te M ax im u m System ( I E C 134) 2N3866 Collector-base , specified 2N3866 Collector cut-off current 2N4427 'C E O 'C E O < < 20 MA 20 p A v


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PDF bb53131 2N3866 2N4427 t 3866 power transistor transistor 3866 s t 3866 transistor transistor 3866
2N5179

Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA motorola european master selection MOTOROLA 2N5179 2n4958 Y parameters of transistors
Text: switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , combinations. 1 2N3866 , 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -39 2N5108 1680 20 300 1400 TO-39 2N3866 400 15 1000 1000 TO-39 'Typical Low-Noise Transistors The low-noise devices listed are produced with carefully controlled r^' and fj to optimize device noise performance. Devices listed in the matrix are classified according to noise figure performance versus


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PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 high gain PNP RF TRANSISTOR 2N4957 2N3866 MOTOROLA 2N2857 MOTOROLA motorola european master selection MOTOROLA 2N5179 2n4958 Y parameters of transistors
RCA 2N3866

Abstract: 2N3866 RF output Design 2N3866 RCA-2N3866 2N3866 RF CLASS A 2N3866 class-a rca 0190 transistor 2N3866 metal rca 711 transistor c3-12
Text: File No. 80 QUGB/JD RF Power Transistors Solid State Division 2N3866 Silicon N-P-N Overlay , S a: LU 1 10 û. li. « 0.8 0.6 200 400 FREQUENCY (f)— MHz RCA- 2N3866 is an , substantially higher power gain. The 2N3866 is intended for class-A, -B, or -C amplifier, frequency-multiplier , - Dissipation derating curve 74 File No. 80 2N3866 92CS-I767I Fig. 5 - Safe area for dc , . frequency 75 2N3866 File No. 80 too FREQUENCY HI—MHz ioo FREQUENCY If)—MHz Fig. 8 - Typical


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PDF 2N3866 RCA 2N3866 2N3866 RF output Design 2N3866 RCA-2N3866 2N3866 RF CLASS A 2N3866 class-a rca 0190 transistor 2N3866 metal rca 711 transistor c3-12
MRF965

Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR MRF586 MRF542 BFY90 MOTOROLA 2n6603 transistor RF 2N3866
Text: switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , combinations. 1 2N3866 , 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -39 2N5108 1680 20 300 1400 TO-39 2N3866 400 15 1000 1000 TO-39 'Typical Low-Noise Transistors The low-noise devices listed are produced with carefully controlled r^' and fj to optimize device noise performance. Devices listed in the matrix are classified according to noise figure performance versus


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PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 MRF965 2N5109 motorola motorola 2N5179 high gain PNP RF TRANSISTOR MRF586 MRF542 BFY90 MOTOROLA 2n6603 transistor RF 2N3866
2011 - 2N3866A JAN

Abstract: No abstract text available
Text: , TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY, TYPES 2N3866 , 2N3866A, 2N3866UB, 2N3866AUB, JAN, JANTX, JANTXV , °C/W 2N3866 , 2N3866A 1.0 2.9 60 30 3.5 0.4 60 175 2N3866UB, 2N3866AUB , ( 2N3866 , 2N3866A) and 3.08 mW/°C (2N3866UB, 2N3866AUB) above TA ≥ +25°C. (2) TA = room ambient as , = 200 MHz hFE (1) VCE = 5.0 V dc IC = 50 mA dc 2N3866 2N3866A 2N3866 2N3866A 2N3866UB , case. f. Maximum limit of RθJC shall be 60°C/W for 2N3866 , 2N3866A; RθJA shall be 325°C/W for


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PDF MIL-PRF-19500/398K MIL-PRF-19500/398J 2N3866, 2N3866A, 2N3866UB, 2N3866AUB, 2N3866A JAN
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