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2n3055 datasheet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2013 - 2n3055

Abstract: mj2955 ST 2n3055
Text: 2N3055 , MJ2955 Complementary power transistors Datasheet - production data Features • Low , ct u od r P e let o bs O Table 1. Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 Rev 8 , 2N3055 , MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V VCER


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PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 mj2955 ST 2n3055
B0411

Abstract: B0733 2SC4977 THD200F1 dk52 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Text: CROSS REFERENCE INDUSTRY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 , BDW51C BDW51C BSS44 BSS44 2N3055 BUX98 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C MJ2955 BSS44 BSS44 BDW51C BDW51C 2N3055 BDW51C BDW51C 8DW51C BUX10 2N5339 2N5339 2N5339 , * Datasheet available on request C m g SCS-TOOMSOfl » 7 / S w iM t 29 CROSS REFERENCE INDUSTRY , 2NS339 2N5339 BSS44 2N4920 BD235 BD235 BD237 2N5339 2N5339 2N5339 2N5339 2N3055 2N3055 2N3055 2N3055


OCR Scan
PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 B0411 B0733 2SC4977 THD200F1 dk52 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
2013 - 2n3055 malaysia

Abstract: Mj2955
Text: 2N3055 , MJ2955 Complementary power transistors Datasheet - production data Features • Low , 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 , rating 1 2N3055 , MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V , 2N3055 , MJ2955 2 Electrical characteristics Electrical characteristics (Tcase = 25°C; unless


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PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 malaysia Mj2955
2002 - Not Available

Abstract: No abstract text available
Text: 2N3055 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 60V 3 (case) 3.84 , 115 Hz W * Maximum Working Voltage This is a shortform datasheet . For a full datasheet please


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PDF 2N3055 O204AA) 16-Jul-02
2002 - 2n3055

Abstract: 2N3055 to3 2N3055 JANTX 2N3055 semelab
Text: 2N3055 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = , is a shortform datasheet . For a full datasheet please contact sales@semelab.co.uk. Semelab Plc


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PDF 2N3055 O204AA) 31-Jul-02 2n3055 2N3055 to3 2N3055 JANTX 2N3055 semelab
2002 - 2N3055-5

Abstract: JANTX 2n3055
Text: 2N3055 /5 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 30V 3 (case) 3.84 , 115 Hz W * Maximum Working Voltage This is a shortform datasheet . For a full datasheet please


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PDF 2N3055/5 O204AA) 16-Jul-02 2N3055-5 JANTX 2n3055
2002 - 2n3055

Abstract: 2N3055-7 equivalent transistor 2n3055 JANTX 2n3055 2N3055 semelab
Text: 2N3055 /7 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = , Voltage This is a shortform datasheet . For a full datasheet please contact sales@semelab.co.uk. Semelab


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PDF 2N3055/7 O204AA) 31-Jul-02 2n3055 2N3055-7 equivalent transistor 2n3055 JANTX 2n3055 2N3055 semelab
2002 - 2N30555

Abstract: 2N3055-5 2N3055 2N3055 to3 2N3055 JAN
Text: 2N3055 /5 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = , is a shortform datasheet . For a full datasheet please contact sales@semelab.co.uk. Semelab Plc


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PDF 2N3055/5 O204AA) 31-Jul-02 2N30555 2N3055-5 2N3055 2N3055 to3 2N3055 JAN
2002 - 2N3055-6

Abstract: No abstract text available
Text: 2N3055 /6 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 100V 3 (case) 3.84 , 70 115 W * Maximum Working Voltage This is a shortform datasheet . For a full datasheet


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PDF 2N3055/6 O204AA) 18-Jun-02 2N3055-6
2002 - 2N3055-6

Abstract: 2N3055 JANTX 2N3055 JAN JANTX 2n3055
Text: 2N3055 /6 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = , Voltage This is a shortform datasheet . For a full datasheet please contact sales@semelab.co.uk. Semelab


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PDF 2N3055/6 O204AA) 16-Jul-02 2N3055-6 2N3055 JANTX 2N3055 JAN JANTX 2n3055
2002 - 2N3055 semelab

Abstract: 2N3055 JAN
Text: 2N3055 /7 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 100V 3 (case) 3.84 , 70 115 W * Maximum Working Voltage This is a shortform datasheet . For a full datasheet


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PDF 2N3055/7 O204AA) 18-Jun-02 2N3055 semelab 2N3055 JAN
2002 - 2N3055-6

Abstract: 2n3055 2N3055 to3 JANTX 2n3055 VCEO100V
Text: 2N3055 /6 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = , Voltage This is a shortform datasheet . For a full datasheet please contact sales@semelab.co.uk. Semelab


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PDF 2N3055/6 O204AA) 31-Jul-02 2N3055-6 2n3055 2N3055 to3 JANTX 2n3055 VCEO100V
2008 - 2N3055

Abstract: 2n3055 malaysia MJ2955 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
Text: 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . Rev 7 Packaging TO-3 January 2008 Package tray 1/7 www.st.com 7 2N3055 , Symbol Parameter Value NPN 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage , . operating junction temperature For PNP type voltage and current values are negative 2N3055 MJ2955 2


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PDF 2N3055 MJ2955 2N3055 2n3055 malaysia MJ2955 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
2004 - 2N3055

Abstract: 2N3055 power circuit 2N3055 power supply circuit 2n3055 circuit t 2N3055 transistors 2n3055 2n3055+circuit
Text: 2N3055 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N3055 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3055 at our online store! 2N3055 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3055 Information Did you Know , Request a Quote Test Houses 2N3055 Specifications Military/High-Rel : N V(BR)CEO (V) : 60 V(BR)CBO (V


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PDF 2N3055 2N3055 STV3208 LM3909N LM3909 2N3055 power circuit 2N3055 power supply circuit 2n3055 circuit t 2N3055 transistors 2n3055 2n3055+circuit
2001 - 2N3055 power amplifier circuit

Abstract: 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
Text: applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Publication Order Number: 2N3055 /D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY , ) 60 500 µs 250 µs 2N3055 , MJ2955 50 µs dc 1 ms There are two limitations on the power handling


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power amplifier circuit 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
2002 - 2N3055 JANTX

Abstract: No abstract text available
Text: 2N3055 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 60V 3 (case) 3.84 , Hz W * Maximum Working Voltage This is a shortform datasheet . For a full datasheet please contact


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PDF 2N3055 O204AA) 18-Jun-02 2N3055 JANTX
2002 - 2N30555

Abstract: 2N3055-5 2N3055 JAN
Text: 2N3055 /5 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 30V 3 (case) 3.84 , Hz W * Maximum Working Voltage This is a shortform datasheet . For a full datasheet please contact


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PDF 2N3055/5 O204AA) 18-Jun-02 2N30555 2N3055-5 2N3055 JAN
2002 - 2N3055-7

Abstract: No abstract text available
Text: 2N3055 /7 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 100V 3 (case) 3.84 , 0.8M 70 115 W * Maximum Working Voltage This is a shortform datasheet . For a full datasheet


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PDF 2N3055/7 O204AA) 16-Jul-02 2N3055-7
2005 - 2n3055

Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
Text: 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , 0 Package 2N3055 20 TO−204AA (Pb−Free) 100 Units / Tray TC, CASE TEMPERATURE , Number: 2N3055 /D 2N3055 (NPN), MJ2955(PNP) Î Î Î Î Î à , . ( 2N3055 ) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 There are two limitations on , Area http://onsemi.com 2 2N3055 (NPN), MJ2955(PNP) 500 200 300 VCE = 4.0 V TJ = 150Â


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PDF 2N3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
1995 - 2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
Text: MOTOROLA Order this document by 2N3055 /D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055 , MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 MOTOROLA 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
2001 - 2N3055 power circuit

Abstract: 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
Text: general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055 /D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , , IC = 1.0 Adc, f = 1.0 kHz) fhfe kHz *Indicates Within JEDEC Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR , ) SECOND BREAKDOWN LIMIT 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 500 µs 250 µs 2N3055 , MJ2955


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power circuit 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
2004 - 2N3055

Abstract: DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
Text: 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO , © Semiconductor Components Industries, LLC, 2004 35 April, 2004 - Rev. 4 Publication Order Number: 2N3055 /D 2N3055 , MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ


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PDF 2N3055, MJ2955 2N3055 2N3055 DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
2003 - MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
Text: 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , /°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100 , Publication Order Number: 2N3055 /D 2N3055 , MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise , *Indicates Within JEDEC Registration. ( 2N3055 ) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20


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PDF 2N3055, MJ2955 2N3055/D MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
1999 - 2N3055

Abstract: 2n3055 malaysia pnp transistor 2N3055 MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055 JAPAN 2N3055 series voltage regulator MJ2955 MJ2955 mexico 2n3055 circuit diagram
Text: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA , types voltage and current values are negative. 2/4 1 3 V V 1.8 V 70 2N3055


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PDF 2N3055 MJ2955 2N3055 MJ2955. 2n3055 malaysia pnp transistor 2N3055 MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055 JAPAN 2N3055 series voltage regulator MJ2955 MJ2955 mexico 2n3055 circuit diagram
2004 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
Text: 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055 , . ORDERING INFORMATION Package Shipping 2N3055 TO-204AA 100 Units / Tray 2N3055G TO , Rev. 4 1 Publication Order Number: 2N3055 /D 2N3055 , MJ2955 ELECTRICAL CHARACTERISTICS (TC , *Indicates Within JEDEC Registration. ( 2N3055 ) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20


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PDF 2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
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