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Part Manufacturer Description Datasheet Download Buy Part
LT3519EMS#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3650EDD-8.4#PBF Linear Technology LT3650-8.X - High Voltage 2 Amp Monolithic 2-Cell Li-Ion Battery Charger; Package: DFN; Pins: 12; Temperature Range: -40°C to 85°C
LT3650IDD-4.1#PBF Linear Technology LT3650-4.X - High Voltage 2 Amp Monolithic Li-Ion Battery Charger; Package: DFN; Pins: 12; Temperature Range: -40°C to 85°C
LT3650IMSE-4.2#PBF Linear Technology LT3650-4.X - High Voltage 2 Amp Monolithic Li-Ion Battery Charger; Package: MSOP; Pins: 12; Temperature Range: -40°C to 85°C
LT3663IDCB#TRMPBF Linear Technology LT3663 - 1.2A Step-Down Switching Regulator with Output Current Limit; Package: DFN; Pins: 8; Temperature Range: -40°C to 85°C
LT3689IUD#PBF Linear Technology LT3689/LT3689-5 - 700mA Step-Down Regulator with Power-On Reset and Watchdog Timer; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C

2n3055 IC Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - 2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
Text: 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , 2N3055 , MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and , Emitter-Base Voltage VEBO 7.0 Collector Current-Continuous IC 15 Base Current IB 7.0 , 31/05/05 V1.0 2N3055 , MJ2955 Complementary Power Transistors Thermal Characteristics , Collector-Emitter Sustaining Voltage (1) ( IC = 200mA, IB = 0) VCEO(sus) 60 - Collector-Emitter


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PDF 2N3055, MJ2955 400mA. 2N3055 2n3055 malaysia MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
1996 - TIP3055

Abstract: pin out TRANSISTOR tip2955 2n3055 motorola TIP3055 pin out 2n3055 IC 2N3055 power amplifier circuit TIP3055 application Motorola transistors tip3055 power bipolar transistor 2N3055 datasheet TIP2955 application note
Text: : For additional design curves, refer to electrical characteristics curves of 2N3055 . IC , COLLECTOR , and amplifier applications. · DC Current Gain - hFE = 20 ­ 70 @ IC = 4.0 Adc · Collector­Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc · Excellent Safe Operating Area 15 AMPERE , Collector­Base Voltage VCB 100 Vdc Emitter­Base Voltage VEB 7.0 Vdc IC 15 Adc , 25°C 100 10 0.1 TIP3055 TIP2955 0.2 0.3 2.0 3.0 0.5 0.7 1.0 IC , COLLECTOR CURRENT


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PDF TIP3055/D TIP3055 TIP2955 TIP3055/D* TIP3055 pin out TRANSISTOR tip2955 2n3055 motorola TIP3055 pin out 2n3055 IC 2N3055 power amplifier circuit TIP3055 application Motorola transistors tip3055 power bipolar transistor 2N3055 datasheet TIP2955 application note
2002 - 2n3055 IC

Abstract: of 2n3055 TIP3055 pin out pin out TRANSISTOR tip2955 TIP2955 2N3055 TIP3055 NPN power transistor TIP3055 2N3055 transistor equivalent 219 tip3055
Text: additional design curves, refer to electrical characteristics curves of 2N3055 . IC , COLLECTOR CURRENT , · 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS hFE = 20­70 @ IC = 4.0 Adc Collector­Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excellent , 7.0 Vdc Collector Current - Continuous IC 15 Adc Base Current IB 7.0 Adc , 2.0 3.0 IC , COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 1. DC Current Gain © Semiconductor


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PDF TIP3055 TIP2955 r14525 TIP3055/D 2n3055 IC of 2n3055 TIP3055 pin out pin out TRANSISTOR tip2955 TIP2955 2N3055 TIP3055 NPN power transistor TIP3055 2N3055 transistor equivalent 219 tip3055
2001 - 2N3055 power amplifier circuit

Abstract: TIP3055 NPN power transistor 2N3055 equivalent transistor NUMBER 2n3055 IC TIP3055-D power transistor tip3055 2N3055 curve equivalent transistor TIP3055 TIP3055 220 2N3055 MEXICO
Text: additional design curves, refer to electrical characteristics curves of 2N3055 . IC , COLLECTOR CURRENT , · 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS hFE = 20­70 @ IC = 4.0 Adc Collector­Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excellent , 7.0 Vdc Collector Current - Continuous IC 15 Adc Base Current IB 7.0 Adc , 2.0 3.0 IC , COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 1. DC Current Gain © Semiconductor


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PDF TIP3055 TIP2955 r14525 TIP3055/D 2N3055 power amplifier circuit TIP3055 NPN power transistor 2N3055 equivalent transistor NUMBER 2n3055 IC TIP3055-D power transistor tip3055 2N3055 curve equivalent transistor TIP3055 TIP3055 220 2N3055 MEXICO
2001 - 2N3055 power amplifier circuit

Abstract: 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
Text: 2N3055 MJ2955 20 IC , COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY , ) IC , COLLECTOR CURRENT (AMP) Figure 5. "On" Voltages http://onsemi.com 4 2N3055 MJ2955 , applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = 20­70 @ IC = 4 Adc · Collector­Emitter Saturation Voltage - · VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc , ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol VCEO VCER VCB VEB IC


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power amplifier circuit 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
2008 - 2N3055

Abstract: 2n3055 malaysia MJ2955 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
Text: 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . Rev 7 Packaging TO-3 January 2008 Package tray 1/7 www.st.com 7 2N3055 , Symbol Parameter Value NPN 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage , Collector-emitter voltage (IB = 0) 60 V VEBO Collector-base voltage ( IC = 0) 7 V IC


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PDF 2N3055 MJ2955 2N3055 2n3055 malaysia MJ2955 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
2013 - 2n3055

Abstract: mj2955 ST 2n3055
Text: 2N3055 , MJ2955 Complementary power transistors Datasheet - production data Features • Low , ct u od r P e let o bs O Table 1. Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 Rev 8 , 2N3055 , MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V VCER


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PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 mj2955 ST 2n3055
2005 - 2n3055

Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
Text: ) Figure 3. DC Current Gain, 2N3055 (NPN) IC = 1.0 A TJ = 150°C 5000 2.0 TJ = 25°C 1.6 IC , IC , COLLECTOR CURRENT (AMP) Figure 7. “On” Voltages, 2N3055 (NPN) Figure 8. “Onâ , 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , . Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc â , , 115 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area Pb−Free Packages


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PDF 2N3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
1995 - 2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
Text: MOTOROLA Order this document by 2N3055 /D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , IC = 4 Adc · Collector­Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc · , Vdc Collector Current - Continuous IC 15 Adc Base Current IB 7 Adc Total , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Collector­Emitter Sustaining Voltage (1) ( IC = 200 mAdc, IB = 0) VCEO(sus) 60 - Vdc


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 MOTOROLA 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
2001 - 2N3055 power circuit

Abstract: 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
Text: , IC = 1.0 Adc, f = 1.0 kHz) fhfe kHz *Indicates Within JEDEC Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC , COLLECTOR , general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device · DC Current Gain - hFE = 20­70 @ IC = 4 Adc · Collector­Emitter Saturation Voltage - · Excellent Safe Operating Area MAXIMUM RATINGS VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power circuit 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
2004 - 2N3055

Abstract: DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
Text: ) IC , COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8. "On" Voltages , 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · Collector-Emitter Saturation Voltage - · · VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area , VCER VCB VEB IC IB Value 60 70 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Emitter


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PDF 2N3055, MJ2955 2N3055 2N3055 DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
2003 - MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
Text: 4.0 A 0.2 0.1 Figure 3. DC Current Gain, 2N3055 (NPN) IC = 1.0 A VCE = 4.0 V TJ = , IC , COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8. "On" Voltages , 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · Collector-Emitter Saturation Voltage - · http://onsemi.com VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent


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PDF 2N3055, MJ2955 2N3055/D MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
2013 - 2n3055 malaysia

Abstract: Mj2955
Text: 2N3055 , MJ2955 Complementary power transistors Datasheet - production data Features • Low , 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 , rating 1 2N3055 , MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V , 0) 60 V VEBO Emitter-base voltage ( IC = 0) 7 V IC Collector current 15


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PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 malaysia Mj2955
2004 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
Text: 4.0 A 0.2 0.1 Figure 3. DC Current Gain, 2N3055 (NPN) IC = 1.0 A VCE = 4.0 V TJ = , IC , COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8. "On" Voltages , 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · Collector-Emitter Saturation Voltage - · · http://onsemi.com VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc


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PDF 2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
2005 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2n3055 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
Text: ) IC , COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8. "On" Voltages , 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20-70 @ IC = 4 Adc · Collector-Emitter Saturation Voltage - · · VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc , MAXIMUM RATINGS Symbol VCEO VCER VCB VEB IC IB Value 60 70 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter


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PDF 2N3055 MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
1995 - 2N3055

Abstract: 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
Text: MOTOROLA Order this document by 2N3055 /D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , IC = 4 Adc · Collector­Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc · , Vdc Emitter­Base Voltage VEB 7 Vdc Collector Current - Continuous IC 15 Adc , overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 , Collector­Emitter Sustaining Voltage (1) ( IC = 200 mAdc, IB = 0) VCEO(sus) 60 - Vdc


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
2005 - 2n3055

Abstract: 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 MJ2955 300 watts amplifier
Text: VOLTAGE (VOLTS) Figure 3. DC Current Gain, 2N3055 (NPN) IC = 1.0 A VCE = 4.0 V TJ = 150 , 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , . Features http://onsemi.com · DC Current Gain - hFE = 20-70 @ IC = 4 Adc · Collector-Emitter , (sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area Pb-Free Packages are Available , Voltage VEB 7 Vdc IC 15 Adc Collector Current - Continuous Base Current IB 7


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PDF 2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 300 watts amplifier
1999 - 2N3055

Abstract: 2n3055 malaysia pnp transistor 2N3055 MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055 JAPAN 2N3055 series voltage regulator MJ2955 MJ2955 mexico 2n3055 circuit diagram
Text: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , BE 100) Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC , Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA


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PDF 2N3055 MJ2955 2N3055 MJ2955. 2n3055 malaysia pnp transistor 2N3055 MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055 JAPAN 2N3055 series voltage regulator MJ2955 MJ2955 mexico 2n3055 circuit diagram
2001 - pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 2n3055 IC 2n3055 pin pnp transistor 2N3055 Mj2955 power transistor hfe 2n3055
Text: 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose , Temperature Range SYMBOL VCBO VCEO VCER VEBO IC IB Ptot Tj, Tstg VALUE 100 60 70 7 15 7 , ) * hFE* Continental Device India Limited TEST CONDITION IC =200mA, IB=0 IC =200mA, RBE=100 VCE=100V, VBE=(off)=1.5V Tc=150ºC VCE=100V, VBE=(off)=1.5V VCE=30V, IB=0 VBE=7V, IC =0 IC =4A, IB=400mA IC =10A, IB=3.3A IC =4A, VCE=4V IC =4A, VCE=4V IC =10A, VCE=4V Data Sheet MIN 60 70 MAX 1.0


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PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E pin configuration transistor 2n3055 pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 IC 2n3055 pin pnp transistor 2N3055 Mj2955 power transistor hfe 2n3055
pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 CDIL 2N3055 Transistor OF transistor 2n3055 to-3 package 2N3055 MJ2955 TRANSISTOR hfe 2n3055 pin configuration transistor mj2955 pnp transistor 2N3055 general purpose 2n3055 transistors
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N3055 NPN , Temperature Range SYMBOL VCBO VCEO VCER VEBO IC IB Ptot Tj, Tstg VALUE 100 60 70 7 15 7 , ) * hFE* Continental Device India Limited TEST CONDITION IC =200mA, IB=0 IC =200mA, RBE=100 VCE=100V, VBE=(off)=1.5V Tc=150ºC VCE=100V, VBE=(off)=1.5V VCE=30V, IB=0 VBE=7V, IC =0 IC =4A, IB=400mA IC =10A, IB=3.3A IC =4A, VCE=4V IC =4A, VCE=4V IC =10A, VCE=4V Data Sheet MIN 60 70 MAX 1.0


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PDF ISO/TS16949 2N3055 MJ2955 C-120 MJ2955Rev291201E pin configuration transistor 2n3055 pin out TRANSISTOR 2n3055 CDIL 2N3055 Transistor OF transistor 2n3055 to-3 package MJ2955 TRANSISTOR hfe 2n3055 pin configuration transistor mj2955 pnp transistor 2N3055 general purpose 2n3055 transistors
1995 - 2N3055

Abstract: 2n3055 malaysia 2N3055 series voltage regulator 2N3055 TO-3 t 2N3055 datasheet of ic 555 2N305 2N3055 power amplifier circuit 2n3055 circuit diagram 2n3055 sgs
Text: 2N3055 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N3055 is , Collector-Emitter Voltage (I B = 0) 60 V V EBO Emitter-Base Voltage (I C = 0) 7 V IC , 115 W -65 to 200 o C 200 o C 1/4 2N3055 THERMAL DATA R thj -ca se , Base-Emitter Voltage IC = 4 A DC Current Gain IC IC IC IC IC IC VCE VCE VCE VCE V CE VCE , Transition frequency IC = 1 A V CE = 4 V Second Breakdown Collector Current V CE = 40 V 4 5


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PDF 2N3055 2N3055 2n3055 malaysia 2N3055 series voltage regulator 2N3055 TO-3 t 2N3055 datasheet of ic 555 2N305 2N3055 power amplifier circuit 2n3055 circuit diagram 2n3055 sgs
1997 - 2n3055 transistor

Abstract: 2N3055 power transistor 2n3055 2n3055 malaysia transistor 1547 b data transistor 2n3055 2N3055 NPN Transistor 2N3055 TO-3 2n3055 circuit diagram 2N3055 power amplifier circuit
Text: 2N3055 SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended , Emitter-Base Voltage (I C = 0) IC IB o P tot Total Dissipation at T c 25 C T stg Storage , Collector Current A 115 W -65 to 200 o C 200 o C 1/4 2N3055 THERMAL DATA , Voltage IC = 4 A DC Current Gain IC IC IC IC IC IC V CE V CE V CE V CE VCE V CE =


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PDF 2N3055 2N3055 2n3055 transistor power transistor 2n3055 2n3055 malaysia transistor 1547 b data transistor 2n3055 2N3055 NPN Transistor 2N3055 TO-3 2n3055 circuit diagram 2N3055 power amplifier circuit
1998 - 2N3055

Abstract: 2n3055 malaysia MJ2955 2N3055 JAPAN 2N3055 specification MJ2955 TRANSISTOR pnp transistor 2N3055 st 2n3055 2N3055 MEXICO 2N3055 schematic diagram
Text: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s ST PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO , Voltage (I E = 0) 2N3055 PNP Unit MJ2955 100 V V CER Collector-Emitter Voltage (R BE , Emitter-Base Voltage (I C = 0) 7 V IC Collector Current IB Base Current P tot Total , current values are negative. August 1998 1/4 2N3055 / MJ2955 THERMAL DATA R thj-case


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PDF 2N3055 MJ2955 2N3055 MJ2955. 2n3055 malaysia MJ2955 2N3055 JAPAN 2N3055 specification MJ2955 TRANSISTOR pnp transistor 2N3055 st 2n3055 2N3055 MEXICO 2N3055 schematic diagram
2015 - 2N3055L-T30-Y

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N3055 NPN SILICON TRANSISTOR SILICON NPN TRANSISTORS  DESCRIPTION The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power , www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R205-003.B 2N3055  NPN , Emitter-Base Voltage VEBO 7 V Collector-Emitter Voltage VCEV 70 V Collector Current IC 15 A , Dissipation at TA=25C PD 115 W Max. Operating Junction Temperature TJ 200 C Storage Temperature


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PDF 2N3055 2N3055 2N3055L-T30-Y QW-R205-003 2N3055L-T30-Y
1995 - Not Available

Abstract: No abstract text available
Text: €” Continuous IC 15 Adc Base Current IB 7 Adc Total Power Dissipation @ TC = 25 , RATINGS • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc • Excellent Safe Operating Area *Motorola , . Complementary Silicon Power Transistors 2N3055 * PNP MJ2955 * NPN SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055 /D MOTOROLA 2 Motorola Bipolar Power Transistor Device Data


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PDF 2N3055/D* 2N3055/D
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