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JAN2N3055 Microsemi Corporation Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

2n3055 25 Datasheets Context Search

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2001 - 2N3055 power amplifier circuit

Abstract: 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
Text: applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Dissipation @ TC = 25 _C Derate above 25 _C PD 115 0.657 Watts W/_C _C Operating and Storage Junction , DISSIPATION (WATTS) 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1 , Publication Order Number: 2N3055 /D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) Characteristic


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power amplifier circuit 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
2008 - 2N3055

Abstract: 2n3055 malaysia MJ2955 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
Text: 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . Rev 7 Packaging TO-3 January 2008 Package tray 1/7 www.st.com 7 2N3055 , Symbol Parameter Value NPN 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage , PTOT Total dissipation at Tc 25 °C Tstg Storage temperature TJ Note: 2/7 Max


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PDF 2N3055 MJ2955 2N3055 2n3055 malaysia MJ2955 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
2005 - 2n3055

Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
Text: 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , Code = Year = Work Week = Country of Orgin 60 ORDERING INFORMATION 40 Device 0 25 , 0 Package 2N3055 20 TO−204AA (Pb−Free) 100 Units / Tray TC, CASE TEMPERATURE , Number: 2N3055 /D 2N3055 (NPN), MJ2955(PNP) Î Î Î Î Î à , , Junction−to−Case Max 1.52 _C/W ELECTRICAL CHARACTERISTICS (TC = 25 _C unless otherwise noted


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PDF 2N3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
1995 - 2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
Text: MOTOROLA Order this document by 2N3055 /D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , Power Dissipation @ TC = 25 _C Derate above 25 _C PD 115 0.657 Watts W/_C TJ, Tstg ­ 65 , 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power Derating , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 MOTOROLA 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
2001 - 2N3055 power circuit

Abstract: 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
Text: general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , Current - Continuous Base Current 15 7 Total Power Dissipation @ TC = 25 _C Derate above 25 _C PD 115 0.657 , 120 100 80 60 40 20 0 PD, POWER DISSIPATION (WATTS) 0 25 50 75 100 125 150 TC, CASE , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055 /D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power circuit 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
2004 - 2N3055

Abstract: DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
Text: Area http://onsemi.com 36 2N3055 , MJ2955 500 300 200 hFE , DC CURRENT GAIN 25 °C 100 70 50 30 , 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Total Power Dissipation @ TC = 25 °C Derate above 25 °C PD 115 0.657 W W/°C °C Operating and Storage , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO


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PDF 2N3055, MJ2955 2N3055 2N3055 DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
2003 - MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
Text: Publication Order Number: 2N3055 /D 2N3055 , MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise , 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , 7 Adc Total Power Dissipation @ TC = 25 °C Derate above 25 °C PD 115 0.657 Watts W/°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100


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PDF 2N3055, MJ2955 2N3055/D MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
2004 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
Text: 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , = 25 °C Derate above 25 °C PD 115 0.657 ­ 65 to + 200 °C Symbol Max Unit , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055 , . ORDERING INFORMATION Package Shipping 2N3055 TO-204AA 100 Units / Tray 2N3055G TO , Techniques Reference Manual, SOLDERRM/D. 20 0 0 25 50 75 100 125 150 175 200


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PDF 2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
2005 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2n3055 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
Text: 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . , Continuous Base Current 15 7 Total Power Dissipation @ TC = 25 °C Derate above 25 °C PD 115 0.657 W W/°C °C , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = , may occur and reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package , 100 Units / Tray 100 Units / Tray PD, POWER DISSIPATION (WATTS) 140 120 100 80 60 40 20 0 0 25


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PDF 2N3055 MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
1999 - 2N3055

Abstract: 2n3055 malaysia pnp transistor 2N3055 MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055 JAPAN 2N3055 series voltage regulator MJ2955 MJ2955 mexico 2n3055 circuit diagram
Text: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , Collector Current IB Base Current P tot T stg Tj Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA


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PDF 2N3055 MJ2955 2N3055 MJ2955. 2n3055 malaysia pnp transistor 2N3055 MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055 JAPAN 2N3055 series voltage regulator MJ2955 MJ2955 mexico 2n3055 circuit diagram
1995 - 2N3055

Abstract: 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
Text: MOTOROLA Order this document by 2N3055 /D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , Base Current IB 7 Adc Total Power Dissipation @ TC = 25 _C Derate above 25 _C PD 115 , 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure , overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
2004 - 2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
Text: 2N3055 , MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: · Power dissipation - PD = 115W at TC = 25 °C. · DC current gain hFE = 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , Total Power Dissipation at TC = 25 °C Derate above 25 °C PD 115 0.657 W W/°C TJ, TSTG , 31/05/05 V1.0 2N3055 , MJ2955 Complementary Power Transistors Thermal Characteristics


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PDF 2N3055, MJ2955 400mA. 2N3055 2n3055 malaysia MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
2005 - 2n3055

Abstract: 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 MJ2955 300 watts amplifier
Text: 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , Adc Total Power Dissipation @ TC = 25 °C Derate Above 25 °C PD 115 0.657 W W/°C TJ , ORDERING INFORMATION 40 Device 0 25 50 75 100 125 150 200 100 Units / Tray , -204AA 100 Units / Tray MJ2955G 0 Package 2N3055 20 TO-204AA (Pb-Free) 100 Units / Tray , . Publication Order Number: 2N3055 /D 2N3055 (NPN), MJ2955(PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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PDF 2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 300 watts amplifier
2004 - 2N3055

Abstract: 2N3055 power circuit 2N3055 power supply circuit 2n3055 circuit t 2N3055 transistors 2n3055 2n3055+circuit
Text: 2N3055 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N3055 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3055 at our online store! 2N3055 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3055 Information Did you Know , Request a Quote Test Houses 2N3055 Specifications Military/High-Rel : N V(BR)CEO (V) : 60 V(BR)CBO (V


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PDF 2N3055 2N3055 STV3208 LM3909N LM3909 2N3055 power circuit 2N3055 power supply circuit 2n3055 circuit t 2N3055 transistors 2n3055 2n3055+circuit
2013 - 2n3055

Abstract: mj2955 ST 2n3055
Text: 2N3055 , MJ2955 Complementary power transistors Datasheet - production data Features • Low , ct u od r P e let o bs O Table 1. Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 Rev 8 , 2N3055 , MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V VCER


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PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 mj2955 ST 2n3055
2N3055 power amplifier circuit

Abstract: 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055-1 2N3055 typical applications 2N3055 power circuit 2n3055 circuit 2N3055 TRANSISTOR 2n3055 TRANSISTOR MJ2955
Text: 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25 °C unless otherwise noted) Characteristic *OFF , Registration. ( 2N3055 ) (1) Pulse Test: Pulse W idth < 300 ns, Duty Cycle < 2.0%. fT 2.5 - MHz hfe 15 , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055 /D Com plem entary , Current Total Power Dissipation @ T q = 25 °C Derate above 25 °C O perating and Storage Junction , , Junction to Case Symbol R e jc Max 1.52 Unit °C /W 0 25 50 75 100 125 150


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PDF 2N3055/D J2955 2N3055 power amplifier circuit 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055-1 2N3055 typical applications 2N3055 power circuit 2n3055 circuit 2N3055 TRANSISTOR 2n3055 TRANSISTOR MJ2955
1998 - 2N3055

Abstract: 2n3055 malaysia MJ2955 2N3055 JAPAN 2N3055 specification MJ2955 TRANSISTOR pnp transistor 2N3055 st 2n3055 2N3055 MEXICO 2N3055 schematic diagram
Text: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s ST PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO , Voltage (I E = 0) 2N3055 PNP Unit MJ2955 100 V V CER Collector-Emitter Voltage (R BE , Dissipation at T c 25 o C T stg Storage Temperature Tj Max. Operating Junction Temperature 15 , current values are negative. August 1998 1/4 2N3055 / MJ2955 THERMAL DATA R thj-case


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PDF 2N3055 MJ2955 2N3055 MJ2955. 2n3055 malaysia MJ2955 2N3055 JAPAN 2N3055 specification MJ2955 TRANSISTOR pnp transistor 2N3055 st 2n3055 2N3055 MEXICO 2N3055 schematic diagram
2n3055 motorola

Abstract: L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
Text: te a b o v e 25 °C O p e ra tin g and S to ra g e J u n c tio n T e m p e ra tu re R ang e T J. Tstg , to C a se Symbol Max 1.5 2 Unit °C /W Rejc 0 25 50 75 100 125 150 , recommended choices tor future use and best overall value. © Motorola, Inc. 1995 (M) MOTOROLA 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25 °C u n le ss o th e rw is e noted) Characteristic *OFF , ) *T 2.5 - MHz hfe 15 120 - fhfe 10 - kHz P ulse Test: P ulse W


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PDF by2N3055/D J2955 2N3055/D 2n3055 motorola L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
1995 - 2N3055

Abstract: 2n3055 malaysia 2N3055 series voltage regulator 2N3055 TO-3 t 2N3055 datasheet of ic 555 2N305 2N3055 power amplifier circuit 2n3055 circuit diagram 2n3055 sgs
Text: I CEV Min . V 50 75 145 250 70 1.6 2.5 MHz 2.87 A 2N3055 TO-3 (H , 2N3055 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N3055 is , Collector Current 15 A IB Base Current 7 A o P tot T otal Dissipation at T c 25 , 115 W -65 to 200 o C 200 o C 1/4 2N3055 THERMAL DATA R thj -ca se Thermal Resistance Junction-case Max o 1.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC


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PDF 2N3055 2N3055 2n3055 malaysia 2N3055 series voltage regulator 2N3055 TO-3 t 2N3055 datasheet of ic 555 2N305 2N3055 power amplifier circuit 2n3055 circuit diagram 2n3055 sgs
1997 - 2n3055 transistor

Abstract: 2N3055 power transistor 2n3055 2n3055 malaysia transistor 1547 b data transistor 2n3055 2N3055 NPN Transistor 2N3055 TO-3 2n3055 circuit diagram 2N3055 power amplifier circuit
Text: Current (V BE = -1.5V) Min. V 50 75 145 250 70 1.6 2.5 MHz 2.87 A 2N3055 , 2N3055 SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended , Emitter-Base Voltage (I C = 0) IC IB o P tot Total Dissipation at T c 25 C T stg Storage , Collector Current A 115 W -65 to 200 o C 200 o C 1/4 2N3055 THERMAL DATA


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PDF 2N3055 2N3055 2n3055 transistor power transistor 2n3055 2n3055 malaysia transistor 1547 b data transistor 2n3055 2N3055 NPN Transistor 2N3055 TO-3 2n3055 circuit diagram 2N3055 power amplifier circuit
1998 - DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
Text: 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 , nearest preferred 2N5339 BDW52C BDW52C BDW52C BDW52C BDW52C BDW52C 2N3055 BUX98A BDW52C , BDW51C 2N3055 BDW51C BDW51C BDW51C BUX10 2N5339 2N5339 2N5339 2N3439 2N3440 BDW51C BDW51C , BDW51C BDW51C BD238 BD238 BD238 BD235 BD235 BD237 2N5339 2N5339 2N5339 2N5339 2N3055 2N3055 2N3055 2N3055 2N5038 2N5038 BDW51C BDW51C 2N5339 2N5339 2N5339 2N5339 2N5339 BSS44 BFX34


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
2001 - pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 2n3055 IC 2n3055 pin pnp transistor 2N3055 Mj2955 power transistor hfe 2n3055
Text: 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , =1A, VCE=4V, f=1KHz 2.5 15 10 f hfe MAX UNITS A MHz 120 KHz *Pulse Test: Pulse Width <300µs, Duty Cycle <2% Continental Device India Limited Data Sheet Page 2 of 4 2N3055 , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The


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PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E pin configuration transistor 2n3055 pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 IC 2n3055 pin pnp transistor 2N3055 Mj2955 power transistor hfe 2n3055
1999 - 2N3055

Abstract: MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 2N3055 JAPAN MJ2955 mexico
Text: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , Value NPN V CBO Collector-Base Voltage (IE = 0) V CER V CEO V EBO 2N3055 PNP Un it , Base Current 7 A P tot T s tg Tj o T otal Dissipation at Tc 25 C Storage Temperature , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA


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PDF 2N3055 MJ2955 2N3055 MJ2955. MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 2N3055 JAPAN MJ2955 mexico
pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 CDIL 2N3055 Transistor OF transistor 2n3055 to-3 package 2N3055 MJ2955 TRANSISTOR hfe 2n3055 pin configuration transistor mj2955 pnp transistor 2N3055 general purpose 2n3055 transistors
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N3055 NPN , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , =1A, VCE=4V, f=1KHz 2.5 15 10 f hfe MAX UNITS A MHz 120 KHz *Pulse Test: Pulse Width <300µs, Duty Cycle <2% Continental Device India Limited Data Sheet Page 2 of 4 2N3055 , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The


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PDF ISO/TS16949 2N3055 MJ2955 C-120 MJ2955Rev291201E pin configuration transistor 2n3055 pin out TRANSISTOR 2n3055 CDIL 2N3055 Transistor OF transistor 2n3055 to-3 package MJ2955 TRANSISTOR hfe 2n3055 pin configuration transistor mj2955 pnp transistor 2N3055 general purpose 2n3055 transistors
2n3055 malaysia

Abstract: 2N3055 NPN Transistor 2N3055 transistor power transistor 2n3055 2N3055 ST data transistor 2n3055 ST 2N3055 value of 2n3055 t 2N3055 transistor B 892
Text: 2N3055 SILICON NPN TRANSISTOR . STM PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N3055 , cto r C urrent Base C urrent Total D issipation at Tc < 25 °C Storage T em perature Max. O perating Junction T em perature V CEO V ebo lc Ib Plot Tstg Tj °c °c 1/4 June 1998 2N3055 , CHARACTERISTICS Sym bol ICEV (T e a se = 25 °C unless otherwise specified) T est C o n d itio ns Min. Typ , (sa1)* V BE* hFE* 70 1 3 1 .5 20 5 70 1.6 2.5 2.87 V V V V CE = 4 V O O > > 't > > <2


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PDF 2N3055 2N3055 2n3055 malaysia 2N3055 NPN Transistor 2N3055 transistor power transistor 2n3055 2N3055 ST data transistor 2n3055 ST 2N3055 value of 2n3055 t 2N3055 transistor B 892
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