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TC52N2646ECTTR Microchip Technology Inc 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5, EIAJ, SC-74A, SOT-23A, 5 PIN
TC52N2646ECT Microchip Technology Inc 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5, EIAJ, SC-74A, SOT-23A, 5 PIN

2n2646 ujt Datasheets Context Search

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2n2646 ujt

Abstract: applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE
Text: .) (Min.) Type Structure mA V Vg or n Package 2N4870 UJT 50 30 0.56-0.75 TO-92 2N4871 UJT 50 30 0.7-0.85 TO-92 GES2646 UJT 50 30 0.56-0.75 TO-92 GES2647 UJT 50 30 0.68-0.82 TO-92 GET4870 UJT 50 30 0.56-0.75 TO-18 GET4871 UJT 50 30 0.7-0.85 TO-18 2N2646 UJT 500 30 0.56-0.75 TO-18 2N2647 UJT 500 30 0.68-0.82 , circuit economy is of primary importance. UJT applications include use as: SCR triggers, relaxation


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PDF 2N6076 MPS2907A 2N4126 MPS-A55 2N4125 MPS-A56 2N3905 MPS-A93 2N3906 MPS-A92 2n2646 ujt applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE
UJT 2N2646 specification

Abstract: UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE
Text: , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , stable oscillators, timers, and frequency dividers. The key advantage of the D5K over conventional UJT , testing on individual devices. For most applications now using conventional UJT 's, the entire D5K2 , the CUJT has opposite polarities from standard UJT 's, its oscillator circuit Figure (b)is"inverted , to load. 2N2646 is used in oscillator which pulses base 2 of D5K. This reduces effective IP of D5K


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PDF 2N489-494â 2N2646-47â 0047/iF UJT 2N2646 specification UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE
UJT 2N2646

Abstract: UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2647 SCR firing inverter circuit 2N2646 UJT 2N2646 ratings UJT 2N2646 RANGE
Text: , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNlJlJNCTIONS General Electric produces a very broad line of standard UJT 's. The TO-5 ceramic disc bar , Transistors The General Electric 2N2646 and 2N2647 Silicon Unijunction Transistors have an entirely new , higher base-one peak pulse boltage. In addition, these devices are much faster switches. The 2N2646 is , . This specification on the 2N2646 and 2N2647 is used to ensure a minimum pulse amplitude for


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PDF 2N489-494â 2N2646-47â 26B-2N2647-HI UJT 2N2646 UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2647 SCR firing inverter circuit 2N2646 UJT 2N2646 ratings UJT 2N2646 RANGE
UJT 2N2646 specification

Abstract: UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits scr firing circuit UJT triggering circuit unijunction application note 2N6028 D5K1
Text: , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UJT 's is its predictability over the specified temperature range. This allows an engineer to use , opposite polarities from standard UJT 's, its oscillator circuit Figure (b)is"inverted." Figure (a) shows a , power is applied to circuit, terminates when voltage is applied to load. 2N2646 is used in oscillator , more nearly ideal characteristics of the D5K (over conventional UJT 's). One application for higher


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PDF 2N489-494â 2N2646-47â 0047/iF 100kn UJT 2N2646 specification UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits scr firing circuit UJT triggering circuit unijunction application note 2N6028 D5K1
2n2646 equivalent

Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt equivalent 2n2646 ujt transistor applications of ujt with circuits
Text: , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F e , a conventional UJT . This is illustrated in Figure 2(c). Resistor RB1 is often used to bypass the , used for temperature compensation and for limiting the dissipation in the UJT during capacitor , ) UJT Equivalent Circuit Figure 1 Unijunction Transistor 1(c) Negative Resistance Characteristic 510 2(a) PUT Replacing 2(b) UJT 2(c) Simplified Typical UJT in Typical Equivalent Circuit 1(a) Circuit 1


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PDF 2N489-494â 2N2646-47â 2N6028 2N2926 GE76F02FC100 2n2646 equivalent 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt equivalent 2n2646 ujt transistor applications of ujt with circuits
UJT 2N2646

Abstract: 2n2646 ujt UJT 2N2646 POWER RATING UJT 2N2646 specification applications of ujt ujt transistor 2n2160 UJT 2N2646 operation UJT 2N491 UJT APPLICATION UJT 2N2646 ratings
Text: , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNlJlJNCTIONS General Electric produces a very broad line of standard UJT 's. The TO-5 ceramic disc bar , normal operation, thermal runaway conditions cannot exist with the UJT up to a junction temperature of , negligible. For this reason an unstabilized power rating can be used with the UJT which is derated to zero at 140° C. The UJT can be used at temperatures above 140°C but in this case external resistance must be


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PDF 2N489-494â 2N2646-47â UJT 2N2646 2n2646 ujt UJT 2N2646 POWER RATING UJT 2N2646 specification applications of ujt ujt transistor 2n2160 UJT 2N2646 operation UJT 2N491 UJT APPLICATION UJT 2N2646 ratings
ujt transistor 2n2160

Abstract: 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits
Text: , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNlJlJNCTIONS General Electric produces a very broad line of standard UJT 's. The TO-5 ceramic disc bar


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PDF 2N489-494â 2N2646-47â ujt transistor 2n2160 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits
2N2646

Abstract: High power SCR 2n2647 SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol "Power scr" rbbo
Text: 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a , higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 , Temperature Capacitor discharge ­ 10µF or less, 30volts or less. 2N2646 2N2647 30 50 2 35 300 -65 to +125 -65 to +150 Unit V mA A V mW °C °C 2N2646 2N2647 ELECTRICAL CHARACTERISTICS , Ratings 2N2646 Intrinsic stand-off ratio VB2B1 = 10V 2N2647 Interbase Resistance , VB2B1 = 3V


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PDF 2N2646 2N2647 2N2646 2N2647 High power SCR SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol "Power scr" rbbo
2N2646

Abstract: 2N2646 transistor TO-220 2N2646
Text: DIGITRON SEMICONDUCTORS 2N2646 , 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS , ) Symbol 2N2646 2N2647 Interbase resistance (VB2B1 = 3V, IE = 0) Min Typ Max Unit Î , peak pulse voltage(3) %/°C Volts mA 2N2646 2N2647 IEB2O - 0.005 0.005 12 0.2 µA 2N2646 2N2647 IP - 1 1 5 2 µA 2N2646 2N2647 IV 4 8 6 10 18 mA VOB1 3 6 5 7 - volts 2N2646 2N2647 Note 1: Intrinsic standoff voltage: Î


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PDF 2N2646, 2N2647 MIL-PRF-19500, 2N2646 2N2646 transistor TO-220 2N2646
2004 - 2n2646

Abstract: 2N2646 to18
Text: 2N2646 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N2646 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Thyristors Buy 2N2646 at our online store! 2N2646 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N2646 Information Did you Know , Test Houses 2N2646 Specifications Military/High-Rel : N Absolute Max. Power Diss. (W) : 300m


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PDF 2N2646 2N2646 Specifications973) STV3208 2N2646 to18
2n2646

Abstract: 2n2647
Text: DIGITRON SEMICONDUCTORS 2N2646 , 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS , ) Symbol 2N2646 2N2647 Interbase resistance (VB2B1 = 3V, IE = 0) Min Typ Max Unit Î , peak pulse voltage(3) %/°C Volts mA 2N2646 2N2647 IEB2O - 0.005 0.005 12 0.2 µA 2N2646 2N2647 IP - 1 1 5 2 µA 2N2646 2N2647 IV 4 8 6 10 18 mA VOB1 3 6 5 7 - volts 2N2646 2N2647 Note 1: Intrinsic standoff voltage: Î


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PDF 2N2646, 2N2647 MIL-PRF-19500, 2n2646 2n2647
2N2646

Abstract: SCR 2N2646 2N2646 CIRCUIT High power SCR 2n2647 2n2646 equivalent 2N2646 transistor datasheet transistor 2N2646 2n2646 2n2647 power scr
Text: 2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a , higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is , Ratings 2N2646 2N2647 VB1E Base 1 ­ Emitter Voltage 30 V VB2E Base 2 ­ Emitter , Current V(BR)B1E 2N2646 ­ 2N2647 Max µA 12 30 COMSET SEMICONDUCTORS V 1/2 2N2646 2N2647 Symbol 2N2646 ­ 2N2647 Ratings RBBO Intrinsic stand-off ratio VB1B2 = 10 V


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PDF 2N2646 2N2647 2N2646 2N2647 SCR 2N2646 2N2646 CIRCUIT High power SCR 2n2646 equivalent 2N2646 transistor datasheet transistor 2N2646 2n2646 2n2647 power scr
UJT 2N2646 specification

Abstract: 2N1671 SCR Manual, General electric UJT 2N2646 2N1671B thyristor scr oscillator circuit uni junction transistor 2N2646 GE SCR Manual General electric SCR manual 2N4891
Text: , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , UNlJlJNCTIONS General Electric produces a very broad line of standard UJT 's. The TO-5 ceramic disc bar


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PDF 2N489-494â 2N2646-47â 2N1671-2N1671A) 2N1671B) UJT 2N2646 specification 2N1671 SCR Manual, General electric UJT 2N2646 2N1671B thyristor scr oscillator circuit uni junction transistor 2N2646 GE SCR Manual General electric SCR manual 2N4891
transistor motorola 2n2646

Abstract: 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 2N2646 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646
Text: 2N2646 2N2647 PN UJTs CASE 22A-01 STYLE 1 •MAXIMUM RATINGS (TA = 25°C unless otherwise noted , /OPTO) 25E D ■b3b755S OQfiOTDl fi ■2N2646 • 2N2647 . 7-3 7-AI 'ELECTRICAL CHARACTERISTICS (Ta , (Vb2B1 = 10 V), Note 1 2N2646 2N2647 V 0.56 0.68 - 0.75 0.82 Interbase Resistance (VB2B1 = 3 V, lE = 0 , €” mA Emitter Reverse Current (vb2e = 30 v, Ibi = o) 2N2646 2N2647 'EB20 - 0.005 0.005 12 0.2 jua Peak Point Emitter Current (VB2B1 = 25 V) 2N2646 2N2647 IP - 1 1 5 2 ma Valley Point Current (VB2B1 = 20 V


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PDF b3b7S55 2N2646 2N2647 2A-01 transistor motorola 2n2646 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646
GES2646

Abstract: 2N2646 11Z12 GES2647 2N2646 terminal 2N2646 TO-92 2n2646 to 92 2N2647 transistor GES2646 Unijunction transistor 2N2646 of
Text: Transistors and Switches 2N2646 , 2N2647, GES2646, GES2647 Silicon Unijunction Transistors TO-92 TO-18 The GE/RCA 2N2646 , GES2646 and 2N2647, GES2647 Controlled Rectifiers and other applications where a , ), and also for triggering high power SCR's. The 2N2646 and GES2646 are intended for genera purpose T^se , 'a(B s lied in JEDa|c jo-18 package ( 2N2646 , industrial appllca ions where circuit economy is of , Unijunction Transistors and Switches-' 2N2646 , 2N2647, GES2646, GES2647 ELECTRICAL CHARACTERISTICS, At


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PDF 2N2646, 2N2647, GES2646, GES2647 GES2646 GES2647 2N2647 2N2646 11Z12 2N2646 terminal 2N2646 TO-92 2n2646 to 92 transistor GES2646 Unijunction transistor 2N2646 of
2N2646

Abstract: Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647
Text: unless otherwise noted.) 2N2646 2N2647 PN UJTs CASE 22A-01 STYLE 1 Rating Symbol Value Unit Power , €”10 fiF or less, 30 volts or less. http://www.bocasemi.com 2N2646 • 2N2647 „ 7-3 7- * ELECTRICAL , Standoff Ratio (VB2B1 = 10 V), Note 1 2N2646 2N2647 V 0.56 0.68 — 0.75 0.82 Interbase Resistance (VB2B1 , ) lB2(mod) — 15 — mA Emitter Reverse Current (VB2E = 30 v, Ibi = o) 2N2646 2N2647 'EB20 — 0.005 0.005 12 0.2 juA Peak Point Emitter Current (VB2B1 = 25 V) 2N2646 2N2647 IP — 1 1 5 2 MA Valley


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PDF 2N2646 2N2647 2A-01 Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647
2008 - full wave controlled rectifier using RC triggering circuit

Abstract: speed control of dc motor using ujt scr diac triac control circuit motor 220 V DIAC Opto-Isolator scr speed control dc motor using ujt and scr TRIAC dimmer pic pure sine wave dimmer automatic light dimmer based on a microchip PIC diac triac control circuit motor diac with triac ac speed control
Text: L1 Ramp UJT Triggering Level Pedestal UJT Emitter Voltage Load Cool R2 3.3 k C1 , may be eliminated * dv/dt snubber network when required C1 T1 Q1 = 2N2646 Q2 = Q4010L5 T1


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PDF AN1003 full wave controlled rectifier using RC triggering circuit speed control of dc motor using ujt scr diac triac control circuit motor 220 V DIAC Opto-Isolator scr speed control dc motor using ujt and scr TRIAC dimmer pic pure sine wave dimmer automatic light dimmer based on a microchip PIC diac triac control circuit motor diac with triac ac speed control
2N2646 motorola

Abstract: 2N2647 2N2646 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264
Text: Uniformity 2N2646 2N2647 PN UJTs · M A X IM U M R A T IN G S IT a = 25°C u n le ss otherw ise noted , S/ OP TO ) 2N2646 · 2N2647 25E D b 3 b 7 5 5 5 OOflOTDl f i ^ m + t


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PDF b3b755S 2N2646 2N2647 2N2646 motorola 2N2647 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264
2n2646 2n2647

Abstract: 2N2646 n2646
Text: TYPES 2N2646 , 2N2647 P-N PIANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 5 9 , M A R C H 1 9 7 3 PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A WIDE RANGE OF M ILITA R Y AND INDUSTRIAL APPLICATIONS · Planar Process Ensures Low Leakage, Low Drive-Current Requirement, and Improved Reliability "mechanical data Package ou tlin e is the same as J E D E C T O -1 8 , LLA S, T E X A S 78232 TYPES 2N2646 , 2N2647 P-N PLANAR SILICON UNUUNCTION TRANSISTORS 'electrical


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PDF 2N2646, 2N2647 2n2646 2n2647 2N2646 n2646
2009 - SK9124

Abstract: 2N1671B AMERICAN MICROSEMICONDUCTOR Thyr 2N2646 2N490 2N4949 2N491A 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N4871
Text: this category 2N1671B 2N2417A 2N2646 1 of 2 11/3/2009 12:51 AM American Microsemiconductor


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PDF com/2n491a 2N491A 2N491A SK9124 2N1671B AMERICAN MICROSEMICONDUCTOR Thyr 2N2646 2N490 2N4949 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N4871
2N2147

Abstract: 2N1756 2N2160 2N1307 2N1305 2N2217 2N1303 2N1308 Application of 2n1304 PNP 2N2923
Text: 250mc<" + 60 40") 150mA High speed Switch 0.65* 2N2646 S/PNP UJ RBB =4.7-9.1k; u=.56-.75; lv=4mA; lp


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PDF 2N987 100mW lOOmc121 2N1131 600mW 150mA 2N1132 25/iA 2N2217 2N2147 2N1756 2N2160 2N1307 2N1305 2N1303 2N1308 Application of 2n1304 PNP 2N2923
2N2646 Vp

Abstract: IEB20 2N2646 2N2646 transistor 35C0693 RB2100
Text: : DANIEL CAREY 9/6/02 DRAWING TITLE: Transìstor, Unijunction, TO—18, PN SIZE A DWG. NO. 2N2646


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PDF 2N2646 35C0693 2N2646 Vp IEB20 2N2646 2N2646 transistor RB2100
Not Available

Abstract: No abstract text available
Text: . 20121019 Volts mA µA µA mA V DIGITRON SEMICONDUCTORS 2N2646 , 2N2647 SILICON


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PDF 2N2417 2N2422, 33mW/Â 2N2646, 2N2647 MIL-PRF-19500,
2N2147

Abstract: fet 2n2646 2n2926 2n3055 tos 2N1305 2N1304 npn 2N2926 2N2147 transistor 2N1308 2N1309
Text: 250mc<" + 60 40") 150mA High speed Switch 0.65* 2N2646 S/PNP UJ RBB =4.7-9.1k; u=.56-.75; lv=4mA; lp


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PDF 2N987 100mW lOOmc121 2N1131 600mW 150mA 2N1132 360mW 120mcf2) 2N2147 fet 2n2646 2n2926 2n3055 tos 2N1305 2N1304 npn 2N2926 2N2147 transistor 2N1308 2N1309
2N2646 Vp

Abstract: 2n2646 IEB20
Text: . NO. Unijunction, TO-18, PN ELECTRONIC FILE REV A SCALE: NTS 2N2646 U.O.M.: Millimeters


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PDF O--18, 2N2646 35C0693 2N2646 Vp 2n2646 IEB20
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