The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
HV120-SM02-R HV120-SM02-R ECAD Model Superior Sensor Technology Board Mount Pressure Sensors 20 inWC, Single Die
HV210-SM02-M HV210-SM02-M ECAD Model Superior Sensor Technology Dual Die Differential Pressure Sensor Optimized for HVAC ±25 to ±2.5K Pa (±0.1 to ±10 inH2O) - Multi Tray
ND210-SM02-M ND210-SM02-M ECAD Model Superior Sensor Technology Dual Die Multi-Range Differential Pressure Sensor ±62.5 to ±2.5K Pa (±0.25 to ±10 inH2O) - Multi Tray
HS210-SM02-M HS210-SM02-M ECAD Model Superior Sensor Technology Dual Die Differential Pressure Transmitter Subsystem Optimized for HVAC ±25 to ±2.5K Pa (±0.1 to ±10 inH2O) - Multi Tray
SP210-SM02-T SP210-SM02-T ECAD Model Superior Sensor Technology Dual Die Differential Pressure Sensor Optimized for Medical ±250 Pa to ±2500 Pa - Single Tray
HS210-SM02-C HS210-SM02-C ECAD Model Superior Sensor Technology Dual Die Differential Pressure Transmitter Subsystem Optimized for HVAC ±25 to ±2.5K Pa (±0.1 to ±10 inH2O) - Cut Tape

2n2369 die Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
PD9002

Abstract: comparison cd 4093 smd code marking a3a SCCB spec stanag LISTING 2N2369 military AQAP-1 IC cd 4093 CECC - Detail Specifications smd code marking a4a
Text: Approvals 2 3. Material Qualification 3 3.1 Header/Cap/Wire Approval Procedures 3.2 Die , : Space Level Processed' Components 8.4.3 Comparison of space level die lot approval 8.5 MIL , inspection Dimensional Check Corrosion Resistance Mechanical Strength Visual Die Sort (before sample , mechanical batches and die lots) is guaranteed from this unique number. 3 DOC 2624 ISS 4 3.2 Die , die Clean Visual Die sort and Tray Die Acceptance Die Attach Die Attach Inspection Aluminium


Original
PDF 168hrs PD9002 comparison cd 4093 smd code marking a3a SCCB spec stanag LISTING 2N2369 military AQAP-1 IC cd 4093 CECC - Detail Specifications smd code marking a4a
2000 - smd diodes s4 1.5w

Abstract: marking code PAD1 SMD U3158 GENERAL SEMICONDUCTOR SMD DIODES s4 PD9002 smd diode marking f4 diode smd marking GPO 27 lvt 817 smd code marking a3a
Text: 0 IS = 11A TJ = 25°C di / dt £ 100A/ms VDD £ 50V (from 6mm down drain lead pad to centre of die , . 3 3.2 Die Approval Procedure , Comparison of space level die lot approval . 27 8.5 MIL , Die Sort (before sample assembly) Sample piece parts submitted to Assembly Vibration test Temperature , (all mechanical batches and die lots) is guaranteed from this unique number. 3 DOC 2624 ISS 5


Original
PDF IRF130SMD05N IRFN130SMD05 IRF130SMD05 IRF130SMD05" IRF130SMD05 IRF130SMD05DSG O276AA) 650pF smd diodes s4 1.5w marking code PAD1 SMD U3158 GENERAL SEMICONDUCTOR SMD DIODES s4 PD9002 smd diode marking f4 diode smd marking GPO 27 lvt 817 smd code marking a3a
2003 - diode bs 9300

Abstract: lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w
Text: . 3 3.2 Die Approval Procedure , Comparison of space level die lot approval . 27 8.5 MIL , Die Sort (before sample assembly) Sample piece parts submitted to Assembly Vibration test Temperature , (all mechanical batches and die lots) is guaranteed from this unique number. 3 DOC 2624 ISS 5 3.2 Die Approval Procedure Incoming Wafer Wafer Saw Wash & Dry Headers* (qualified) Clean Break into


Original
PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) IRFNJ9130 IRF9130SMD05DSG" IRF9130SMD05DSG O276AA) diode bs 9300 lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w
2003 - 2N2369 equivalent

Abstract: No abstract text available
Text: . 3 3.2 Die Approval Procedure , Comparison of space level die lot approval . 27 8.5 MIL , inspection Dimensional Check Corrosion Resistance Mechanical Strength Visual Die Sort (before sample , mechanical batches and die lots) is guaranteed from this unique number. 3 DOC 2624 ISS 5 3.2 Die , die Clean Visual Die sort and Tray Die Acceptance Die Attach Die Attach Inspection Aluminium


Original
PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) O276AA) 860pF IRF9130SMD05DGS 2N2369 equivalent
2000 - QR204

Abstract: CECC Detail Specifications 2N2369 equivalent
Text: (from 6mm down drain lead pad to centre of die ) 8.7 (from 6mm down source lead to centre of source , . 3 3.2 Die Approval Procedure , Comparison of space level die lot approval . 27 8.5 MIL , inspection Dimensional Check Corrosion Resistance Mechanical Strength Visual Die Sort (before sample , mechanical batches and die lots) is guaranteed from this unique number. 3 DOC 2624 ISS 5 3.2 Die


Original
PDF IRF130SMD05N IRFN130SMD05 IRF130SMD05 IRF130SMD05DSG O276AA) 650pF MIL-PRF-19500, CPR\10192006\SEME\IRF130. 03-Jan-2007 QR204 CECC Detail Specifications 2N2369 equivalent
smd diodes s4 1.5w

Abstract: PD9002 QR204 A4A smd SMD a3a GENERAL SEMICONDUCTOR SMD DIODES s4 smd code marking a3a QR208 QR217 smd code marking a4a
Text: . 3 3.2 Die Approval Procedure , Comparison of Space Level Die Lot Approval. 30 11.3 , Corrosion Resistance Mechanical Strength Visual Die Sort (before sample assembly) Sample piece parts , unique "date" code. Traceability to each incoming batch of materials (all mechanical batches and die lots) is guaranteed from this unique number. 3 DOC 2624 ISS 8 3.2 Die Approval Procedure


Original
PDF QR209 BS9300 QR216 QR204 MIL-PRF-19500 smd diodes s4 1.5w PD9002 QR204 A4A smd SMD a3a GENERAL SEMICONDUCTOR SMD DIODES s4 smd code marking a3a QR208 QR217 smd code marking a4a
mosfet to ignition coil

Abstract: 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition advance ignition
Text: down. This voltage should not be confused with the "arc voltage" developed across the gap of die , D5 — Zener 15 V 200 mW Q1 — 2N2369 Q2 - 2N2369 Q3 - 2N2369 Q4 ■2N2369 Q5 - 2N2905 R1 â , die time the leakage reactance spike starts to diminish. The magnitude of the leakage spike amply


OCR Scan
PDF 00V/DIV AN966: AN-969 mosfet to ignition coil 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition advance ignition
1996 - 2n2369

Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N2369 /D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred , = 20 Vdc, IE = 0, TA = 150°C) 2N2369 2N2369A Collector Cutoff Current (VCE = 20 Vdc, VBE = , © Motorola, Inc. 1996 1 2N2369 2N2369A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 2N2369 2N2369A 40 — 120 120 (IC


Original
PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2n2369
2N2369 equivalent

Abstract: 2N2369 MA 4108 2N2369A MOTOROLA 2N2368 2N3227 MOTOROLA 2N3227 2N2369A J 2N2369 St 2N2369
Text: to +200 °C 2N2368 , 2N2369 , A 2N3227 2N2369A JAN, JTX JTXV AVAILABLE CASE 22-03, STYLE 1 TO-18 (TO , ) 2N2368, 2N2369 , 2N2369A 2N3227 v(BR)EBO 4.5 6.0 - Vdc Collector Cutoff Current (Vce = 20 Vdc, Vbe = 3.0 Vdc) 2N3227 'CEX — 0.2 /¿Ade Collector Cutoff Current (Vcb = 20 Vdc, iE = 0) 2N2368, 2N2369 2N3227 ICBO - 0.4 0.2 pAdc (Vcb = 20 Vdc, ig = 0, Ta = 150°C) 2N2368, 2N2369 , 2N2369A 2N3227 - 30 50 , -° Vdc) 2N2368 2N2369 2N2369A 2N3227 hFE 20 40 100 60 120 120 300 dc = 10 mAdc, Vce = 1'° Vdc, Ta =


OCR Scan
PDF 2N2368 2N3227 2N2369A, 2N2368 2N2369 2N2368, 2N2369 equivalent MA 4108 2N2369A MOTOROLA 2N3227 MOTOROLA 2N2369A J 2N2369 St 2N2369
1996 - 2N2369

Abstract: 2N2369A 2N2369A MOTOROLA 2N2369 motorola 2N2369 equivalent 2N2369 datasheet input impedance of 2N2369 data sheet J 2N2369 motorola 2n2369 1N916
Text: MOTOROLA Order this document by 2N2369 /D SEMICONDUCTOR TECHNICAL DATA Switching Transistors 2N2369 2N2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 , , IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) 2N2369 2N2369A Collector Cutoff Current (VCE = 20 , Device Data © Motorola, Inc. 1996 1 2N2369 2N2369A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 2N2369 2N2369A 40 -


Original
PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2N2369 2N2369A 2N2369A MOTOROLA 2N2369 motorola 2N2369 equivalent 2N2369 datasheet input impedance of 2N2369 data sheet J 2N2369 motorola 2n2369 1N916
1996 - 2N2369A

Abstract: 2N2369 2N2369 equivalent 2N2369A MOTOROLA J 2N2369 1N916 2N3227 input impedance of 2N2369 motorola 2n2369
Text: MOTOROLA Order this document by 2N2369 /D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred , Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) 2N2369 2N2369A , Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N2369 2N2369A ELECTRICAL , 2N2369 2N2369A 40 - 120 120 (IC = 10 mAdc, VCE = 1.0 Vdc, TA = ­55°C) 2N2369 20 -


Original
PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2N2369A 2N2369 2N2369 equivalent 2N2369A MOTOROLA J 2N2369 1N916 2N3227 input impedance of 2N2369 motorola 2n2369
2N2369

Abstract: 2N2369 equivalent
Text: Switching Transistors NPN Silicon COLLECTOR 2N2369 2N2369A* 3 EMITTER MAXIMUM RATINGS R ating , ICBO 2N2369 2N2369A 'c e s 2N2369A2N2369A 40 15 40 4.5 - - - - Vdc Vdc Vdc Vdc nAdc - 0.4 30 0.4 nAdc - - 0.4 nAdc (M) MOTOROLA M otorola, Inc. 1996 2N2369 , CHARACTERISTICS DC Current G ainO ) (I q = 10 mAdc, V q e = 1 .0 Vdc) hFE 2N2369 2N2369A 2N2369 2N2369A 2N2369A 2N2369A 2N2369 v CE(sat) 2N2369 2N2369A 2N2369A 2N2369A 2N2369A v BE(sat) All Types 2N2369A 2N2369A


OCR Scan
PDF 2N2369 2N2369A* 2N2369/D 2N2369 equivalent
2004 - 2N2369

Abstract: 2N2369At
Text: 2N2369 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N2369 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N2369 at our online store! 2N2369 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N2369 Information Did you Know , Test Houses 2N2369 Specifications Military/High-Rel : N V(BR)CEO (V) : 15 V(BR)CBO (V) : 40 I(C


Original
PDF 2N2369 2N2369 STV3208 LM3909N 2N2369At
2004 - 2369A

Abstract: 2N2369 2N2369 datasheet 2N2369 transistor J 2N2369 2N2369A 100MHz-500MHz
Text: 2N2369 , 2369A High Speed Switching Transistors Features: · NPN Silicon Planar Epitaxial , . · 2N2369 /A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power and High , .0 2N2369 , 2369A High Speed Switching Transistors Absolute Maximum Ratings Parameter Symbol VCEO , Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain 2N2369 , V1.0 2N2369 , 2369A High Speed Switching Transistors Electrical Characteristics (Ta = 25


Original
PDF 2N2369, 2N2369/A 2369A 2N2369 2N2369 datasheet 2N2369 transistor J 2N2369 2N2369A 100MHz-500MHz
2001 - 2N2369 transistor

Abstract: J 2N2369 2n2369 IC 13 J 2N2369A 2N2369A
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369 /A are NPN Silicon High Speed Saturated Switching , ) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB=0 Collector , ts 2N2369 >20 2N2369 /2369A 2N2369A UNIT 40-120 >30 >20 >500 <4.0 MHZ pF <12


Original
PDF 2N2369 2N2369A 2N2369/A C-120 2N2369 transistor J 2N2369 2n2369 IC 13 J 2N2369A 2N2369A
2001 - J 2N2369

Abstract: 2N2369 2N2369A
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369 /A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications , Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB , ts 2N2369 >20 2N2369 /2369A 2N2369A UNIT 40-120 >30 >20 >500 <4.0 MHZ pF <12


Original
PDF 2N2369 2N2369A 2N2369/A C-120 J 2N2369 2N2369 2N2369A
2N2369

Abstract: J 2N2369 2N2369A
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369 /A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications. ABSOLUTE , Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB , ts 2N2369 >20 2N2369 /2369A 2N2369A UNIT 40-120 >30 >20 >500 <4.0 MHZ pF <12


Original
PDF ISO/TS16949 2N2369 2N2369A 2N2369/A C-120 2N2369 J 2N2369 2N2369A
1994 - 2N2369

Abstract: transistor 2n2369 2N2369 transistor 2N2369 datasheet J 2N2369
Text: 2N2369 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching , 1/4 2N2369 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case , = 300 µs, duty cycle = 1 %. 2/4 0.2 2N2369 TO-18 MECHANICAL DATA mm inch DIM , 0.045 L 45o 45o D A G I E F H B L C 0016043 3/4 2N2369


Original
PDF 2N2369 2N2369 transistor 2n2369 2N2369 transistor 2N2369 datasheet J 2N2369
1997 - 2N2369

Abstract: transistor 2n2369 J 2N2369 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor Product , Philips Semiconductors Product specification NPN switching transistor 2N2369 FEATURES , NPN switching transistor 2N2369 LIMITING VALUES In accordance with the Absolute Maximum Rating , Product specification NPN switching transistor 2N2369 CHARACTERISTICS Tj = 25 °C unless , oscilloscope Philips Semiconductors Product specification NPN switching transistor 2N2369


Original
PDF M3D125 2N2369 MAM264 SCA54 117047/00/02/pp8 2N2369 transistor 2n2369 J 2N2369 BP317
2N2369 equivalent

Abstract: 2N3227 2N2369 transistor equivalent transistor 2N2369 2N3227 MOTOROLA 2N2369 D4613 2N3221 transistor 2n2369 motorola semiconductor handbook
Text: 2N2369 2N3227 NPN SILICON TRANSISTORS LOW CURRENT @ EPITAXIAL " @ , ) lCBO 2N2369 2N3227 (VCB = 20 Vdc, TA = 150°C) Min Base Cutoff Current (vcE = 20 Vdc, vOB = 3 Vdc) 2N3227 CoHector-Base Bretidom (1c = 10v Adc, IB = o) BVEBO i BVCEO* 2N2369 , :2$B=1;:Lc) (Ic = 10 mAdc, VCE = 1.0 Vdc) 2N2369 2N3227 12 2N2369 2N3221 (Ic = 10 , , VCE = 2 Vdc) 2N2369 Small Signal Current Gtin (Ic = 10 mAdc, VCE = 10 Vdc, f = 100 mc) Output


Original
PDF 2N2369 2N3227 2N2369 equivalent 2N3227 2N2369 transistor equivalent transistor 2N2369 2N3227 MOTOROLA 2N2369 D4613 2N3221 transistor 2n2369 motorola semiconductor handbook
QR204

Abstract: A4A smd SMD a3a smd code marking a3a a3a smd MIL-STD-9858A cecc 50000 smd code marking a4a smd diode A4 QR208
Text: before they can be used. Many of the die used are covered by our Route 2 Scheme of Surveillance (further , : Table III Group C ( Die related tests) for class level B Test MIL-STD-883 method Condition , xxxx-J/A xxxx-JANTXV Ordering Information: Part Number Description Marking (*) 2N2369 -JQR QR205 groups A,B,C 2N2369 -J 2N2369 -JQR-B QR205 groups A,B,C 2N2369 -J/B 2N2369 -JQR-A QR205 groups A,B,C screening to QR204 level B 2N2369 -J/A screening to QR204 level A * Where


Original
PDF QR208, QR209) QR204 BS9300 MIL-PRF-19500 QR204 A4A smd SMD a3a smd code marking a3a a3a smd MIL-STD-9858A cecc 50000 smd code marking a4a smd diode A4 QR208
1998 - 2N3866 application note

Abstract: transistor 2n2369 LT1016 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 Transistor 2N3866
Text: die . An external Schottky clamp diode between the input and the negative rail can speed up recovery , , the baseemitter voltages at the 2N2369 reverse, causing it to switch very quickly. The 2N3866 , at 15V. Most of the 7ns to 9ns delay in this stage occurs in the MOSFET and the 2N2369 . +V , . 15V 1k 2N2369 + 2N3866 HP5082-2810 LT1671 15V OUT ­ 1k 12pF 1k 1k RISE TIME = 4ns FALL TIME = 5ns RL 2N2369 + 1671 F04 2N3866 POWER FET LT1671 ­


Original
PDF LT1671 LT1394, LT1016 LT1116 LT1016 LT1394 LT1720 1671fs, 2N3866 application note transistor 2n2369 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 Transistor 2N3866
1998 - Not Available

Abstract: No abstract text available
Text: current flow through the die . An external Schottky clamp diode between the input and the negative rail , , the baseemitter voltages at the 2N2369 reverse, causing it to switch very quickly. The 2N3866 , at 15V. Most of the 7ns to 9ns delay in this stage occurs in the MOSFET and the 2N2369 . +V , . 15V 1k 2N2369 + 2N3866 HP5082-2810 LT1671 – 15V OUT 1k 12pF 1k 1k RISE TIME = 4ns FALL TIME = 5ns RL 2N2369 + 1671 F04 2N3866 POWER FET LT1671 â


Original
PDF LT1671 LT1394, LT1016 LT1116 LT1016 LT1394 LT1720 1671fs,
1998 - 2N3866 application note

Abstract: 2N5160 2N2369 transistor pulse generator LT1016 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8
Text: die . An external Schottky clamp diode between the input and the negative rail can speed up recovery , , the baseemitter voltages at the 2N2369 reverse, causing it to switch very quickly. The 2N3866 , at 15V. Most of the 7ns to 9ns delay in this stage occurs in the MOSFET and the 2N2369 . +V , . 15V 1k 2N2369 + 2N3866 HP5082-2810 LT1671 15V OUT ­ 1k 12pF 1k 1k RISE TIME = 4ns FALL TIME = 5ns RL 2N2369 + 1671 F04 2N3866 POWER FET LT1671 ­


Original
PDF LT1671 LT1394, LT1016 LT1116 LT1016 LT1394 LT1720 1671f 2N3866 application note 2N5160 2N2369 transistor pulse generator LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8
2N2475

Abstract: 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N929 2N930 BAW63 2N2369 FERRANTI BFS36
Text: BS9365 F027 13 BZX88-C6V2 Z4 15 BSS56 L7 ZTX341 13 BZX88-C6V8 Z5 15 BSV35 S2 2N2369 BS9365 F037 14 , TO-18 - 2N2368 15 500 0.24 10 1 20 60 10 - - 12 15 10 TO-18 - 2N2369 15 500 0.24 10 1 40 120 10 - - , 285 100 300 150 10 0.4 150 15 250 8 G5 2N2369 40 15 12 18 40 120 10 1 0.24 10 1 500 4 G18 2N2369A 40


OCR Scan
PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N2475 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N2369 FERRANTI
Supplyframe Tracking Pixel