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Part Manufacturer Description Datasheet Download Buy Part
LT3571EUD#TRPBF Linear Technology LT3571 - 75V DC/DC Converter for APD Bias; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT3571IUD#PBF Linear Technology LT3571 - 75V DC/DC Converter for APD Bias; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT3571EUD#PBF Linear Technology LT3571 - 75V DC/DC Converter for APD Bias; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT3571IUD#TRPBF Linear Technology LT3571 - 75V DC/DC Converter for APD Bias; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT3482IUD#TRPBF Linear Technology LT3482 - 90V Boost DC/DC Converter with APD Bias Current Monitor; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT3482EUD#PBF Linear Technology LT3482 - 90V Boost DC/DC Converter with APD Bias Current Monitor; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C

2n2369 avalanche Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
mosfet to ignition coil

Abstract:
Text: suited to this application since they can tolerate high levels of energy in avalanche breakdown , required) • Avalanche capability The suitability of power MOSFETs for this application has sometimes , D5 — Zener 15 V 200 mW Q1 — 2N2369 Q2 - 2N2369 Q3 - 2N2369 Q4 ■2N2369 Q5 - 2N2905 R1 â , displays avalanche occurring in the HEXFET, and this avalanche capabil-ty will prevent the HT voltage from


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PDF 00V/DIV AN966: AN-969 mosfet to ignition coil 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition 12 volt cd ignition schematic
ignition module

Abstract:
Text: drive required) · Avalanche capability The suitability of power MOSFETs for this application has , Q4 Q5 2N2369 2N2369 2N2369 2N2369 2N2905 R10 Rl 1 R12 R13 - Resistor 5K6 1/8W Resistor 10K 1/8W 820R , magnitude of the leakage spike amply displays avalanche occurring in the HEXFET, and this avalanche


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PDF AN966: AN-969 ignition module 2n2369 avalanche cdi ignition timing advance cdi ignition car cdi ignition irf740 application note cdi ignition circuit design of ignition and fuel system ELECTRONIC CENTRIFUGAL SWITCH 800RPM
1998 - AN72

Abstract:
Text: No file text available


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PDF LT1016 LT1016, LT1394, AN72-41 90VDC AN72-42 V-to-90V AN72-43 AN72-44 an72f AN72 PM-5771 2N2369 avalanche an7212 2N2369 AVALANCHE PULSE GENERATOR an7210 application circuits of ic 74121 LM733 2tx-849
2003 - 2N2369 AVALANCHE PULSE GENERATOR

Abstract:
Text: is settable from before-to-after a trigger output. This circuit uses an avalanche pulse generator to , further discussion and recommendations. Note 4: Additional examples of avalanche pulse generators and , Generator Avalanche operation requires high voltage bias. The LT1533 low noise switching regulator and , maximum and grounding Q4's collector. Next, set the " Avalanche Voltage Adjust" so free running Note 5 , " Avalanche Voltage Adjust" five volts below this voltage and unground Q4's collector. Set the "30ns Trim


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PDF AN94-11 AN94-12 an94f 2N2369 AVALANCHE PULSE GENERATOR 2N2369 transistor pulse generator 2n2369 avalanche Avalanche Transistor Circuits for Generating nanosecond pulse generator Avtech PICO Electronics 1000V TD1110C ten pao transformer 2N2501
2009 - 2N2369 avalanche

Abstract:
Text: , F Shaver, P Griffith, " Avalanche .H. .G. Transistor Circuits for Generating Rectangular Pulses," Electronic Engineering, December 1962. 8. R.B. Seeds, "Triggering of Avalanche Transistor Pulse Circuits," , Avalanche Transistors". Proc. I.E.E., Vol 104, Part B, July 1957, pp. 394 to 402. 10. Braatz, Dennis, " Avalanche Pulse Generators," Private Communication, Tektronix, Inc., 2003. 11. Tektronix, Inc., Type 111 , , "Millimicrosecond Avalanche Switching Circuit Utilizing Double-Diffused Silicon Transistors," Fairchild


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PDF AN122 350ps an122f AN122-19 AN122-20 2N2369 avalanche 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA CTX-02-16004 P-6056 motorola transistor handbook crystal generator 1GHz chessman
1996 - 2n2369

Abstract:
Text: MOTOROLA Order this document by 2N2369 /D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred , = 20 Vdc, IE = 0, TA = 150°C) 2N2369 2N2369A Collector Cutoff Current (VCE = 20 Vdc, VBE = , © Motorola, Inc. 1996 1 2N2369 2N2369A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 2N2369 2N2369A 40 — 120 120 (IC


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PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2n2369
2N2369 equivalent

Abstract:
Text: to +200 °C 2N2368 , 2N2369 , A 2N3227 2N2369A JAN, JTX JTXV AVAILABLE CASE 22-03, STYLE 1 TO-18 (TO , ) 2N2368, 2N2369 , 2N2369A 2N3227 v(BR)EBO 4.5 6.0 - Vdc Collector Cutoff Current (Vce = 20 Vdc, Vbe = 3.0 Vdc) 2N3227 'CEX — 0.2 /¿Ade Collector Cutoff Current (Vcb = 20 Vdc, iE = 0) 2N2368, 2N2369 2N3227 ICBO - 0.4 0.2 pAdc (Vcb = 20 Vdc, ig = 0, Ta = 150°C) 2N2368, 2N2369 , 2N2369A 2N3227 - 30 50 , -° Vdc) 2N2368 2N2369 2N2369A 2N3227 hFE 20 40 100 60 120 120 300 dc = 10 mAdc, Vce = 1'° Vdc, Ta =


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PDF 2N2368 2N3227 2N2369A, 2N2368 2N2369 2N2368, 2N2369 equivalent MA 4108 2N2369A MOTOROLA 2N3227 MOTOROLA 2N2369A J 2N2369 input impedance of 2N2369
1996 - 2N2369

Abstract:
Text: MOTOROLA Order this document by 2N2369 /D SEMICONDUCTOR TECHNICAL DATA Switching Transistors 2N2369 2N2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 , , IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) 2N2369 2N2369A Collector Cutoff Current (VCE = 20 , Device Data © Motorola, Inc. 1996 1 2N2369 2N2369A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 2N2369 2N2369A 40 -


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PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2N2369 2N2369A 2N2369A MOTOROLA 2N2369 equivalent 2N2369 motorola 2N2369 datasheet input impedance of 2N2369 data sheet 2N3227 MOTOROLA 2N3227 motorola 2n2369
1996 - 2N2369A

Abstract:
Text: MOTOROLA Order this document by 2N2369 /D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred , Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) 2N2369 2N2369A , Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N2369 2N2369A ELECTRICAL , 2N2369 2N2369A 40 - 120 120 (IC = 10 mAdc, VCE = 1.0 Vdc, TA = ­55°C) 2N2369 20 -


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PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2N2369A 2N2369 2N2369 equivalent 2N2369A MOTOROLA J 2N2369 1N916 2N3227 input impedance of 2N2369 motorola 2n2369
2N2369

Abstract:
Text: Switching Transistors NPN Silicon COLLECTOR 2N2369 2N2369A* 3 EMITTER MAXIMUM RATINGS R ating , ICBO 2N2369 2N2369A 'c e s 2N2369A2N2369A 40 15 40 4.5 - - - - Vdc Vdc Vdc Vdc nAdc - 0.4 30 0.4 nAdc - - 0.4 nAdc (M) MOTOROLA M otorola, Inc. 1996 2N2369 , CHARACTERISTICS DC Current G ainO ) (I q = 10 mAdc, V q e = 1 .0 Vdc) hFE 2N2369 2N2369A 2N2369 2N2369A 2N2369A 2N2369A 2N2369 v CE(sat) 2N2369 2N2369A 2N2369A 2N2369A 2N2369A v BE(sat) All Types 2N2369A 2N2369A


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PDF 2N2369 2N2369A* 2N2369/D 2N2369 equivalent
2004 - 2N2369

Abstract:
Text: 2N2369 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N2369 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N2369 at our online store! 2N2369 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N2369 Information Did you Know , Test Houses 2N2369 Specifications Military/High-Rel : N V(BR)CEO (V) : 15 V(BR)CBO (V) : 40 I(C


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PDF 2N2369 2N2369 STV3208 LM3909N 2N2369At
2004 - 2369A

Abstract:
Text: 2N2369 , 2369A High Speed Switching Transistors Features: · NPN Silicon Planar Epitaxial , . · 2N2369 /A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power and High , .0 2N2369 , 2369A High Speed Switching Transistors Absolute Maximum Ratings Parameter Symbol VCEO , Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain 2N2369 , V1.0 2N2369 , 2369A High Speed Switching Transistors Electrical Characteristics (Ta = 25


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PDF 2N2369, 2N2369/A 2369A 2N2369 2N2369 datasheet 2N2369 transistor 100MHz-500MHz 2N2369A J 2N2369
2001 - 2N2369 transistor

Abstract:
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369 /A are NPN Silicon High Speed Saturated Switching , ) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB=0 Collector , ts 2N2369 >20 2N2369 /2369A 2N2369A UNIT 40-120 >30 >20 >500 <4.0 MHZ pF <12


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PDF 2N2369 2N2369A 2N2369/A C-120 2N2369 transistor J 2N2369 2n2369 2N2369A IC 13 J 2N2369A
2001 - 2N2369

Abstract:
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369 /A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications , Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB , ts 2N2369 >20 2N2369 /2369A 2N2369A UNIT 40-120 >30 >20 >500 <4.0 MHZ pF <12


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PDF 2N2369 2N2369A 2N2369/A C-120 2N2369 2N2369A J 2N2369
2N2369

Abstract:
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369 /A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications. ABSOLUTE , Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB , ts 2N2369 >20 2N2369 /2369A 2N2369A UNIT 40-120 >30 >20 >500 <4.0 MHZ pF <12


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PDF ISO/TS16949 2N2369 2N2369A 2N2369/A C-120 2N2369 2N2369A J 2N2369
1994 - 2N2369

Abstract:
Text: 2N2369 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching , 1/4 2N2369 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case , = 300 µs, duty cycle = 1 %. 2/4 0.2 2N2369 TO-18 MECHANICAL DATA mm inch DIM , 0.045 L 45o 45o D A G I E F H B L C 0016043 3/4 2N2369


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PDF 2N2369 2N2369 transistor 2n2369 2N2369 transistor 2N2369 datasheet J 2N2369
1997 - 2N2369

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor Product , Philips Semiconductors Product specification NPN switching transistor 2N2369 FEATURES , NPN switching transistor 2N2369 LIMITING VALUES In accordance with the Absolute Maximum Rating , Product specification NPN switching transistor 2N2369 CHARACTERISTICS Tj = 25 °C unless , oscilloscope Philips Semiconductors Product specification NPN switching transistor 2N2369


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PDF M3D125 2N2369 MAM264 SCA54 117047/00/02/pp8 2N2369 transistor 2n2369 BP317 J 2N2369
2N2369 equivalent

Abstract:
Text: 2N2369 2N3227 NPN SILICON TRANSISTORS LOW CURRENT @ EPITAXIAL " @ , ) lCBO 2N2369 2N3227 (VCB = 20 Vdc, TA = 150°C) Min Base Cutoff Current (vcE = 20 Vdc, vOB = 3 Vdc) 2N3227 CoHector-Base Bretidom (1c = 10v Adc, IB = o) BVEBO i BVCEO* 2N2369 , :2$B=1;:Lc) (Ic = 10 mAdc, VCE = 1.0 Vdc) 2N2369 2N3227 12 2N2369 2N3221 (Ic = 10 , , VCE = 2 Vdc) 2N2369 Small Signal Current Gtin (Ic = 10 mAdc, VCE = 10 Vdc, f = 100 mc) Output


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PDF 2N2369 2N3227 2N2369 equivalent 2N3227 MOTOROLA 2N2369 transistor equivalent transistor 2N2369 2N3227 D4613 2N2369 2N3221 motorola semiconductor handbook MOTOROLA TRANSISTOR 2N3227
PD9002

Abstract:
Text: permits. Ordering Information: (examples) Part Number Description Marking (*) 2N2369 -JQR QR205 groups A,B 2N2369 -JQR 2N2369 -JQRB QR205 groups A,B 2N2369 -JQRB 2N2369 -JQRA QR205 groups A,B Screening to QR204 level B 2N2369 -JQRA Screening to QR204 level A 2N2369 -JQRS Space Level ­ see section 8.4 (QR216 & QR217) 2N2369 -JQRS QR217 groups A,B Screening to QR216 * Where , ) Ordering Information: (examples) Part Number Description Marking (*) 2N2369 -JQRS QR217 groups


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PDF 168hrs PD9002 comparison cd 4093 SCCB spec smd code marking a3a stanag LISTING jan,tx series semiconductors CECC - Detail Specifications AQAP-1 ultrasonic flaw detector 2N2369-JQRS
2000 - smd diodes s4 1.5w

Abstract:
Text: . Ordering Information: (examples) Part Number 2N2369 -JQR 2N2369 -JQRB 2N2369 -JQRA 2N2369 -JQRS Description , Marking (*) 2N2369 -JQR 2N2369 -JQRB 2N2369 -JQRA 2N2369 -JQRS 19 DOC 2624 ISS 5 MIL-PRF , (suffix P) (suffix D) (suffix C) Ordering Information: (examples) Part Number 2N2369 -JQRS 2N2369 -JQRS-C 2N2369 -JQRS-CD 2N2369 -JQRS-PCD Description QR217 groups A,B Screening to QR216 Marking (*) 2N2369 -JQRS 2N2369 -JQRS 2N2369 -JQRS 2N2369 -JQRS QR217 groups A,B and group C. Screening to QR216 QR217 groups A,B


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PDF IRF130SMD05N IRFN130SMD05 IRF130SMD05 IRF130SMD05" IRF130SMD05 IRF130SMD05DSG O276AA) 650pF smd diodes s4 1.5w marking code PAD1 SMD U3158 diode smd marking GPO 27 GENERAL SEMICONDUCTOR SMD DIODES s4 lvt 817 PD9002 smd code marking a3a smd diode marking f4
2003 - diode bs 9300

Abstract:
Text: . Ordering Information: (examples) Part Number 2N2369 -JQR 2N2369 -JQRB 2N2369 -JQRA 2N2369 -JQRS Description , Marking (*) 2N2369 -JQR 2N2369 -JQRB 2N2369 -JQRA 2N2369 -JQRS 19 DOC 2624 ISS 5 MIL-PRF , (suffix P) (suffix D) (suffix C) Ordering Information: (examples) Part Number 2N2369 -JQRS 2N2369 -JQRS-C 2N2369 -JQRS-CD 2N2369 -JQRS-PCD Description QR217 groups


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PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) IRFNJ9130 IRF9130SMD05DSG" IRF9130SMD05DSG O276AA) diode bs 9300 U3158 Automatic Railway Gate Control system, PD9002 lvt 817 smd code marking a3a marking code PAD1 SMD jan,tx series semiconductors diode smd marking GPO 27 2N5153 SMD
2003 - 2N2369 equivalent

Abstract:
Text: permits. Ordering Information: (examples) Part Number Description Marking (*) 2N2369 -JQR QR205 groups A,B 2N2369 -JQR QR205 groups A,B 2N2369 -JQRB 2N2369 -JQRB Screening to QR204 level B 2N2369 -JQRA QR205 groups A,B 2N2369 -JQRA 2N2369 -JQRS Space Level – see section 8.4 (QR216 & QR217) Screening to QR204 level A 2N2369 -JQRS QR217 groups A,B Screening to QR216


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PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) O276AA) 860pF IRF9130SMD05DGS 2N2369 equivalent
2000 - 2N2369 equivalent

Abstract:
Text: permits. Ordering Information: (examples) Part Number Description Marking (*) 2N2369 -JQR QR205 groups A,B 2N2369 -JQR QR205 groups A,B 2N2369 -JQRB 2N2369 -JQRB Screening to QR204 level B 2N2369 -JQRA QR205 groups A,B 2N2369 -JQRA 2N2369 -JQRS Space Level – see section 8.4 (QR216 & QR217) Screening to QR204 level A 2N2369 -JQRS QR217 groups A,B Screening to QR216


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PDF IRF130SMD05N IRFN130SMD05 IRF130SMD05 IRF130SMD05DSG O276AA) 650pF MIL-PRF-19500, CPR\10192006\SEME\IRF130. 03-Jan-2007 2N2369 equivalent CECC Detail Specifications QR204
pin diodes radiation detector

Abstract:
Text: radiation hard with majority carrier avalanche breakdown voltage regulation. These easily perform up to 10 , Microsemi Lawrence Division. Examples include special designs for the 2N2369 , and 2N3725 transistors that


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micronote 103

Abstract:
Text: radiation hard with majority carrier avalanche breakdown voltage regulation. These easily perform up to 10 , Microsemi Lawrence Division. Examples include special designs for the 2N2369 , and 2N3725 transistors that


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