The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
2N2219 Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
2N2219A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
2N2219A Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
2N2219AL Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
2N2219 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
2N2219 LEAD FREE Central Semiconductor Corp TRANS NPN 30V 0.8A TO-39

2n2219 equivalent Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N2222A motorola

Abstract: equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola
Text: f MAXIMUM RATINGS <\ 35 (ûSS Rating Symbol 2N2219 2N2222 2N2218A 2N2219A 2N2222A Unit Co I , Vdc Collector Current — Continuous ic 800 800 mAdc 2N2218A 2N2219 ,A 2N2222,A Total Device , Range TJ' Tstg -65 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol 2N2218A 2N2219 ,A , , Junction to Case R0JC 58 145.8 °c/w 2N2218A, 2N2219 ,A* 2N2222,A* 2N2218, A/ 2N2219 ,A CASE 79-04 TO-39 (TO , 10 Vdc) 2N2218A 2N2219 .A, 2N2222,A hFE 20 35 — 0C = 1-0 mAdc, Vce = 10 Vdc) \ 2N2218A 2N2219


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PDF 2N2219 2N2222 2N2218A 2N2219A 2N2222A 2N2222A motorola equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola
1996 - 2N2222A motorola

Abstract: 2n2222 motorola 2N2219A MOTOROLA motorola 2N2219 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A equivalent transistor 2N2222 motorola 2N2222A 2n2222
Text: MOTOROLA Order this document by 2N2219 /D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 2 BASE LAST SHIP 21/03/00 2N2219 2N2219A* 2N2222 2N2222A* NPN Silicon *Motorola Preferred Devices 1 EMITTER MAXIMUM RATINGS Symbol 2N2219 2N2222 2N2219A 2N2222A , 2N2219 ,A 2N2222,A Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C PD 0.8 4.57 0.4 2.28 PD 3.0 17.1 1.2 6.85 2 1 2N2219 ,A CASE


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PDF 2N2219/D 2N2219 2N2219A* 2N2222 2N2222A* 2N2219A 2N2222A 2N2219 2N2222A motorola 2n2222 motorola 2N2219A MOTOROLA motorola 2N2219 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A equivalent transistor 2N2222 motorola 2N2222A 2n2222
Transistor Equivalent list for 2n2218

Abstract: 2n2218 application note 2n2219 2N2219A 2N2219 transistor substitute 2N2219 transistor transistor 2n2218 2n2219 application 2N2218 equivalent for 2N2219
Text: , SWITCHING, TYPES 2N2218, 2N2218A, 2N2218AL, 2N2219 , 2N2219A, AND 2N2219AL, JAN, JANTX, JANTXV, JANS, JANSM , 1.3 Maximum ratings unless otherwise specified TA = +25°C. Types 2N2218, 2N2219 2N2218A , . Types hFE at VCE = 10 V dc hFE1 IC = 100 µA dc Min Max 2N2218 2N2219 2N2218A 2N2219A , min max 0.4 0.4 0.3 0.3 0.3 0.3 1.6 1.6 1.0 1.0 1.0 1.0 2N2218 2N2219 2N2218A 2N2219A 2N2218AL 2N2219AL 20 30 20 30 20 30 ton pF Min 2N2218 2N2219 2N2218A 2N2219A


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PDF MIL-PRF-19500/251R MIL-PRF-19500/251P 2N2218, 2N2218A, 2N2218AL, 2N2219, 2N2219A, 2N2219AL, MIL-PRF-19500. Transistor Equivalent list for 2n2218 2n2218 application note 2n2219 2N2219A 2N2219 transistor substitute 2N2219 transistor transistor 2n2218 2n2219 application 2N2218 equivalent for 2N2219
2N2222A 331

Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
Text: U M R A T IN G S 2N2218 2N2219 2N2221 2N2222 30 60 5.0 800 2N2218A 2N2219A 2N2221A 2N2222A 40 75 6.0 800 2N2218, A/ 2N2219 , A 2N2221, A/2N2222, À 2N5581/82 JAN, JTX, JTXV AVAILABLE 2N5581 2N55S2 40 , / 2N2219 , A CASE 73-04 TO-39 (TO-205AD) STYLE 1 3 2N2221, A/2N2222, A CASE 22-03 TO-18 (TO-206AA) STYLE 1 3 , 2N2218.A 2N2221A 2N2219 ,A 2N2222,A Total Device Dissipation @ Ta = 25°C Derate above 25°C Total Device , 22 18 A 2 N 22 21 A 2N5581 2 N 22 19 A 2 N 22 22 A 2N5582 2N2218, 2N2221 2N2219 , 2N2222 2N2218A


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PDF b3b7E54 2N2218 2N2219 2N2221 2N2222 2N2218A 2N2219A 2N2221A 2N2222A 2N2218, 2N2222A 331 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
2012 - 2n2219

Abstract: 2n2219 application JAN2N2219 2N2219A Transistor 2N2219A JANTX2N2219 2N2219/2N2219
Text: 2N2219 , 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon Features http , TO-39 CASE 205AB ( 2N2219 , 2N2219A) Stresses exceeding Maximum Ratings may damage the device , : 2N2219 /D 2N2219 , 2N2219A, 2N2219AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , ) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. 2N2219 2N2219A/AL 2N2219 2N2219A/AL ton - - - - 40 35 250 300 ns 2N2219 2N2219A/AL |hfe| hfe 2.5 50 75 - - 12 - - 8.0 25 - - 2N2219 2N2219A/AL


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PDF 2N2219, 2N2219A, 2N2219AL MIL-PRF-19500/251 205AB 2N22applicable 2N2219/D 2n2219 2n2219 application JAN2N2219 2N2219A Transistor 2N2219A JANTX2N2219 2N2219/2N2219
2012 - 2n2219

Abstract: No abstract text available
Text: 2N2219 , 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon http://onsemi.com , EMITTER °C/W Operating and Storage Junction Temperature Range TO−39 CASE 205AB ( 2N2219 , Industries, LLC, 2012 August, 2012 − Rev. 1 1 Publication Order Number: 2N2219 /D 2N2219 , −Emitter Breakdown Voltage (IE = 10 mAdc) 2N2219 2N2219A/AL Emitter−Base Cutoff Current (VEB = 5.0 Vdc) (VEB = 6.0 Vdc) (VEB = 4.0 Vdc) 2N2219 2N2219A/AL All Collector−Emitter Cutoff


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PDF 2N2219, 2N2219A, 2N2219AL 2N2219/D 2n2219
2012 - 2N2219

Abstract: No abstract text available
Text: 2N2219 , 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon Features http , TO-39 CASE 205AB ( 2N2219 , 2N2219A) THERMAL CHARACTERISTICS Characteristic Thermal Resistance , © Semiconductor Components Industries, LLC, 2012 August, 2012 - Rev. 1 1 Publication Order Number: 2N2219 /D 2N2219 , 2N2219A, 2N2219AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , ) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. 2N2219 2N2219A/AL 2N2219 2N2219A/AL ton - - -


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PDF 2N2219, 2N2219A, 2N2219AL MIL-PRF-19500/251 205AB 2N2219A) 2N2219/D 2N2219
Diode Equivalent 1n4148

Abstract: 2n2219 equivalent transistor equivalent transistor R5 2n2219 equivalent diode 1n4148 equivalent MICROWAVE TRANSISTOR resistor equivalent 2N2219 equivalent diode for 1n4148 transistor 1N4148
Text: Philips Semiconductors Product specification Microwave Transistors APPLICATION INFORMATION COMPONENT A D.U.T. TR D C 1,C 2 R1 R2, R3, R5, R6 R4 Rp Rb> Rc. Re. Rx General DESCRIPTION amplifier microwave transistor transistor diode tantalum capacitor resistor resistor resistor resistor resistor VALUE DIMENSIONS TYPE NUMBER 1/4 MC3403 or equivalent 2N2219 or equivalent 1N4148 or equivalent 22 nF, 50 V 2.2 kß ±5% 10 kQ ±5% 4.7 k n +5% 10 kQ+5% note 1 10 turns Note 1. Values to be


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PDF MC3403 2N2219 1N4148 Diode Equivalent 1n4148 2n2219 equivalent transistor equivalent transistor R5 2n2219 equivalent diode 1n4148 equivalent MICROWAVE TRANSISTOR resistor equivalent 2N2219 equivalent diode for 1n4148 transistor 1N4148
1997 - 2n2219

Abstract: 2N2905 2N2219 application 2N2219 transistor 2N2905 2N2219 2N2219A philips 2n2219 application reference du transistor 2N2219 Transistor 2N2219A c2n2219 2N2219A
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 2N2219 ; 2N2219A NPN switching transistors , Sep 03 Philips Semiconductors Product specification NPN switching transistors 2N2219 , switching · DC and VHF/UHF amplification, for 2N2219 only. 1 handbook, halfpage 3 2 DESCRIPTION , PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter 2N2219 60 V - 75 V 2N2219 - 30 V 2N2219A VCEO - 2N2219A - 40 V -


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PDF M3D111 2N2219; 2N2219A 2N2219 2N2905 2N2905A. MAM317 SCA55 2N2905 2N2219 application 2N2219 transistor 2N2905 2N2219 2N2219A philips 2n2219 application reference du transistor 2N2219 Transistor 2N2219A c2n2219 2N2219A
1997 - 2N2219A

Abstract: 2n2219 2N2219 transistor 2N2905 2N2219 application VHF power TRANSISTOR PNP TO-39 ST 2N2905 2N2905 2N2905A Transistor 2N2905A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2219 ; 2N2219A NPN switching , 1997 Sep 03 Philips Semiconductors Product specification NPN switching transistors 2N2219 , switching · DC and VHF/UHF amplification, for 2N2219 only. 1 handbook, halfpage 3 2 DESCRIPTION , 75 V 2N2219 - 30 V 2N2219A - 40 V - 800 mA Tamb 25 °C - 800 mW 75 - 250 - 2N2219 2N2219A VCEO collector-emitter voltage open base


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PDF M3D111 2N2219; 2N2219A 2N2219 2N2905 2N2905A. MAM317 SCA55 2N2219A 2N2219 transistor 2N2905 2N2219 application VHF power TRANSISTOR PNP TO-39 ST 2N2905 2N2905A Transistor 2N2905A
2n2219

Abstract: 2N221B 2N2218 2N2210 2N2219A 2n2218a
Text: SEMICONDUCTOR TECHNICAL DATA 2N2219 « 2N2219A ' _ S ^ J Î L0NCS 2805 Vet«ra/>s Highway , 2N2218A. 2N2219A v {BR )C B O 2N 2218,2N 2219 2N2218A, 2N2219A v (B R )E B O 2N2218 2N2219 2N2218A. 2N 2219A `C E S 2N2218. 2N2219 2N2218A, 2N2219A 0.01 0.01 (continued] 5.0 60 60 75 30 50 Vdc Vdc Sym bol , ) Ta = 150 C ; (V c B = 50 Vdc) 2N2219 2N2218A, 2N2219A 'E B O 10 10 0.01 nAdc 'C B O 2N2218. 2N2219 2N2218A. 2N2219A - - 0.01 0.01 uAdc | Sym bol | Min [ Max | Unit : Emitter


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PDF 2N2219« 2N2219A 1177t; 2N2218 221SA 2N2218A 2N2218, 2N2219 2N2218A, 2N221B 2N2210 2N2219A
2004 - 2n2219

Abstract: No abstract text available
Text: 2N2219 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N2219 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N2219 at our online store! 2N2219 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N2219 Information Did you Know , Request a Quote Test Houses 2N2219 Specifications Military/High-Rel : N V(BR)CEO (V) : 30 V(BR)CBO (V


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PDF 2N2219 2N2219 2N2219s) STV3208 LM3909N
1995 - LM103 zener

Abstract: jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
Text: 000 mmhos 5 mA) yields a stage gain of about 60 Since the equivalent capacitance looking into the , JFET and 2N2219 bipolar have inherently high output impedance Using R1 as a current sensing resistor , and 2N2219 may be eliminated if the source of the JFET is connected to R1 6 TL H 6791 ­ 19 , 2N2219 bipolar serve as voltage devices between the output and the current sensing resistor R1 The LM101 , of current the 2N2219 and 10k resistor may be eliminated with the output appearing at the source of


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PDF 2N4339 2N4393 2N4393 LM103 zener jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
2001 - Not Available

Abstract: No abstract text available
Text: SILICON PLANAR SWITCHING TRANSISTORS 2N2218 2N2219 TO-39 Metal Can Package 2N2218 TO 2N2222 Are , PLANAR SWITCHING TRANSISTORS 2N2218 2N2219 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS , =10V* 2N2218 MIN MAX 20 25 35 20 40 120 20 2N2219 MIN MAX 35 50 75 50 100 300 30 UNIT , , Duty Cycle <2% Continental Device India Limited Data Sheet Page 2 of 4 2N2218 2N2219 TO , " x 15" x 13.5" 32K 40 kgs Page 3 of 4 Notes 2N2218 2N2219 TO-39 Metal Can Package


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PDF 2N2218 2N2219 2N2218 2N2222 2N2218, C-120 Rev101001
2N2218

Abstract: pin configuration transistor 2N2219 2N2219 transistor 2N2219 NPN SWITCHING transistor 2N2222 transistor 2N2219 data sheet 2N2218-2N2219 transistor 2n2218 datasheet 2N2222 2n2219 application
Text: PLANAR SWITCHING TRANSISTORS 2N2218 2N2219 TO-39 Metal Can Package 2N2218 TO 2N2222 Are NPN , TRANSISTORS 2N2218 2N2219 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless , 20 25 35 20 40 120 20 2N2219 MIN MAX 35 50 75 50 100 300 30 UNIT 250 250 , % Continental Device India Limited Data Sheet Page 2 of 4 2N2218 2N2219 TO-39 Metal Can Package TO , " x 15" x 13.5" 32K 40 kgs Page 3 of 4 Notes 2N2218 2N2219 TO-39 Metal Can Package


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PDF ISO/TS16949 2N2218 2N2219 2N2218 2N2222 2N2218, C-120 Rev101001 pin configuration transistor 2N2219 2N2219 transistor 2N2219 NPN SWITCHING transistor 2N2222 transistor 2N2219 data sheet 2N2218-2N2219 transistor 2n2218 datasheet 2n2219 application
2N2369 equivalent

Abstract: BS9302 BFS36A BFS36 BAW63A BAW63 2N930 2N929 ic marking z7 f025
Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Transistors Diodes Nearest metal can Device or E-line Device Type marking equivalent B.S. number* Page Type marking , 0.4 150 15 100 300 150 200 50 45 100 150 TO-39 2N2219 2N2906 40 600 0.4 150 15 40 120 150 200 50 45 , 300 150 10 0.3 150 15 300 8 G5 2N2218 60 30 35 285 40 120 150 10 0.4 150 15 250 8 G5 2N2219 60 30 35


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PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N2369 equivalent ic marking z7 f025
PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent DIODE 1N9148 transistor npn high speed switching 2N2222 npn small signal current gain 1N3605
Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS CHIP DRAWINGS Equivalent JEDEC Number GE Type Description Chip Dwg. Specification Sheet No. 1N914 Designed for high-speed switching and general purpos;e applications. 35.88 1N914A 1 1N914B M46P-X510 35.90 1N3064 M46P-X507 Very high , (Chip) except high voltage. 2 35.96 SILICON SIGNAL TRANSISTOR CHIPS Equivalent JEDEC Number GE Type , M26P-X531 NPN chip for low-level amplifiers. 35.79 2N930 M26P-X505 35.76 2N2219 2N2220


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PDF 1N914 1N914A 1N914B M46P-X510 1N3064 M46P-X507 1N3600 1N3605 M46P-X516 1N4150 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent DIODE 1N9148 transistor npn high speed switching 2N2222 npn small signal current gain
2N2218-19

Abstract: 2N2219 transistor 2N2218 2n2219 pin configuration transistor 2N2219 transistor 2N2219 data sheet 2N2221 2N2222 s parameters of 2N2222
Text: Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218 2N2219 TO-39 Metal Can , NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218 2N2219 TO-39 Metal Can Package ELECTRICAL , =10V* 2N2218 MIN MAX 20 25 35 20 40 120 20 2N2219 MIN MAX 35 50 75 50 100 300 30 UNIT , , Duty Cycle <2% Continental Device India Limited Data Sheet Page 2 of 4 2N2218 2N2219 TO , " x 15" x 13.5" 32K 40 kgs Page 3 of 4 Notes 2N2218 2N2219 TO-39 Metal Can Package


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PDF 2N2218 2N2219 2N2218 2N2222 2N2221, C-120 Rev101001 2N2218-19 2N2219 transistor 2n2219 pin configuration transistor 2N2219 transistor 2N2219 data sheet 2N2221 s parameters of 2N2222
2N2475

Abstract: 2N2369 equivalent 2N2907 equivalent BS9302 BFS36A 2N2369 FERRANTI BAW63A BAW63 2N930 ic marking z7
Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Transistors Diodes Nearest metal can Device or E-line Device Type marking equivalent B.S. number* Page Type marking , 25* 175* 150 TO-39 2N2904 2N2219 30 800 0.4 150 15 100 300 150 250 20 25* 200* 150 TO-39 2N2905 , 0.3 150 15 300 8 G5 2N2218 60 30 35 285 40 120 150 10 0.4 150 15 250 8 G5 2N2219 60 30 35 285 100


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PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N2475 2N2369 equivalent 2N2907 equivalent 2N2369 FERRANTI ic marking z7
2002 - LM3524

Abstract: LM3524 PDF FREE DOWNLOAD dc motor speed control lm3524 LM3524 power supply flyback LM3524* motor control ic lm3524 datasheet lm3524 datasheet pin 10 lm3524 dc motor speed control lm358 motor speed lm358
Text: provide drive to the 2N2219 switch transistor. The 5.6k and .01 µF values set the switching frequency at , the wave forms in the circuit. Trace A is the 2N2219 collector and trace B is the AC-coupled LF356 output. Each time the 2N2219 collector goes low, power is driven into the lamp. This is reflected in the positive going ramp at the LF356's output. When the 2N2219 goes off, the lamp cools. This is


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PDF LM3524 LM3524 PDF FREE DOWNLOAD dc motor speed control lm3524 LM3524 power supply flyback LM3524* motor control ic lm3524 datasheet lm3524 datasheet pin 10 lm3524 dc motor speed control lm358 motor speed lm358
1994 - 2N2222

Abstract: 2N2219 transistor 2N2221-2N2222 2N2218-2N2219 2N2219 2N2222 NPN Transistor features Thomson transistor 2n2222 2N2222 transistor transistor 2N2219 data sheet 2N222
Text: 2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219 , 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219 ) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/ 2N2219 approved to CECC 50002100


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PDF 2N2218-2N2219 2N2221-2N2222 2N2218, 2N2219, 2N2221 2N2222 2N2218 2N2219) 2N2222) 2N2219 transistor 2N2221-2N2222 2N2218-2N2219 2N2219 2N2222 NPN Transistor features Thomson transistor 2n2222 2N2222 transistor transistor 2N2219 data sheet 2N222
1998 - LM3524

Abstract: dc motor speed control lm3524 ic lm3524 LM3524* motor control IC LF356 ic lm3524 datasheet pin 10 lm3524 dc motor speed control lm358 flyback by lm3524 DC SPEED MOTOR WITH LM358
Text: . LM3524 output transistors are paralleled and provide drive to the 2N2219 switch transistor. The 5.6k and , ms time constant. Figure 2 shows the wave forms in the circuit. Trace A is the 2N2219 collector and trace B is the AC-coupled LF356 output. Each time the 2N2219 collector goes low, power is driven into the lamp. This is reflected in the positive going ramp at the LF356's output. When the 2N2219 goes


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PDF LM3524 dc motor speed control lm3524 ic lm3524 LM3524* motor control IC LF356 ic lm3524 datasheet pin 10 lm3524 dc motor speed control lm358 flyback by lm3524 DC SPEED MOTOR WITH LM358
1983 - rosemount 118mf

Abstract: OPTO MOS SWITCH OFM 2N5160 equivalent KELVIN-VARLEY DIVIDER LT1001 ultronix 105A OFM-1A 2n5160 LT301A 2N5160 ss
Text: to equivalent grades of competing precision amplifiers. Guaranteed Low Offset Voltage LT1001AM , LT1001AM/883 receives 168 hr. burn-in at 125°C. or equivalent . ±14 50 ±13 85 ±14 V ±12.5 , 0 to (V + ­ 1V) 6 2N3685 7 + LT1001 2 2N2219 4 ­ 6 2N3685 2N2219 , CONVERTER 2k 2N2219 IN4148 350 BRIDGE 3 * 301k 10k ZERO + LT1001 2 6 ­ 1µF , 3 2N2219 6 + OUTPUT 1 0-10V 25mA IN 914 8.2k TRIAD TY-90 VN-46 LM399


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PDF LT1001 LT1001C, LT1001AM LT1001C 152mm) 254mm) rosemount 118mf OPTO MOS SWITCH OFM 2N5160 equivalent KELVIN-VARLEY DIVIDER LT1001 ultronix 105A OFM-1A 2n5160 LT301A 2N5160 ss
1983 - LT1001

Abstract: No abstract text available
Text: to equivalent grades of competing precision amplifiers. Guaranteed Low Offset Voltage LT1001AM , second after power is applied. The LT1001AM/883 receives 168 hr. burn-in at 125°C. or equivalent , ) VIN 3 2N3685 LT1001 2 2N2219 4 7 + 0 to (V + – 1V) 6 – 6 2N3685 2N2219 4 10K –5V 10k 1000pF V – = –2 to –35V V IOUT = IN R V , MONITORING A/D CONVERTER 2k 2N2219 IN4148 350Ω BRIDGE 3 * 301k 10k ZERO + LT1001 2


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PDF LT1001 LT1001C, LT1001AM LT1001C LT10098 152mm) 254mm) 1001fb LT1001
1983 - ultronix 105A

Abstract: LT1001 118MF 2N3866 equivalent Transistor 2N3866 74C9 LT1002 LT1001C LT1001AM 2N5160
Text: to equivalent grades of competing precision amplifiers. Guaranteed Low Offset Voltage LT1001AM , LT1001AM/883 receives 168 hr. burn-in at 125°C. or equivalent . ±14 50 ±13 85 ±14 V ±12.5 , 0 to (V + ­ 1V) 6 2N3685 7 + LT1001 2 2N2219 4 ­ 6 2N3685 2N2219 , CONVERTER 2k 2N2219 IN4148 350 BRIDGE 3 * 301k 10k ZERO + LT1001 2 6 ­ 1µF , 3 2N2219 6 + OUTPUT 1 0-10V 25mA IN 914 8.2k TRIAD TY-90 VN-46 LM399


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PDF LT1001 LT1001C, LT1001AM LT1001C 152mm) 254mm) ultronix 105A LT1001 118MF 2N3866 equivalent Transistor 2N3866 74C9 LT1002 LT1001C LT1001AM 2N5160
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