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2SK975 equivalent Datasheets Context Search

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2000 - Hitachi DSA00276

Abstract: No abstract text available
Text: 2SK975 Silicon N-Channel MOS FET ADE-208-1243 (Z) 1st. Edition Mar. 2001 Application High , 2SK975 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain , ) RDS(off) 2 2SK975 Power vs. Temperature Derating 1.5 Channel Dissipation Pch (W) 10 µs s 10 0 , 2SK975 Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Drain to Source Saturation , Current ID (A) 5 4 2SK975 Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time


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PDF 2SK975 ADE-208-1243 D-85622 Hitachi DSA00276
2000 - Not Available

Abstract: No abstract text available
Text: on these materials or the products contained therein. 2SK975 Silicon N-Channel MOS FET x , -92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SK975 Absolute Maximum Ratings (Ta = 25 , 2SK975 Power vs. Temperature Derating 1.5 Channel Dissipation Pch (W) 10 µs s 10 0 µ 10 Maximum Safe , Voltage VDS (V) 3 1 2 4 Gate to Source Voltage VGS (V) 3 2SK975 Drain to Source Saturation , Case Temperature TC (°C) 160 0.1 0.2 2 0.5 1.0 Drain Current ID (A) 5 4 2SK975 Body


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PDF D-85622
1999 - Hitachi DSA00279

Abstract: No abstract text available
Text: 2SK975 Silicon N-Channel MOS FET Application High speed power switching Features · · · · Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source · Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SK975 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current , (off) RDS(off) 2 2SK975 3 2SK975 4 2SK975 5 2SK975 When using this


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PDF 2SK975 Hitachi DSA00279
1999 - Hitachi DSA002779

Abstract: No abstract text available
Text: 2SK975 Silicon N-Channel MOS FET Application High speed power switching Features · · · · , -92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SK975 Absolute Maximum Ratings (Ta = 25 , source cutoff voltage Static drain to source on state resistance VGS(off) RDS(off) 2 2SK975 Power , Voltage VDS (V) 3 1 2 4 Gate to Source Voltage VGS (V) 3 2SK975 Drain to Source Saturation , Case Temperature TC (°C) 160 0.1 0.2 2 0.5 1.0 Drain Current ID (A) 5 4 2SK975 Body


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PDF 2SK975 D-85622 Hitachi DSA002779
1999 - 2SK975

Abstract: Hitachi DSA00388
Text: 2SK975 Silicon N-Channel MOS FET Application High speed power switching Features · · · , Outline TO-92 Mod D 32 1 1. Source 2. Drain 3. Gate G S 2SK975 Absolute Maximum , A/µs Note: 2 1. Pulse test 2SK975 Maximum Safe Operation Area Power vs. Temperature , = 25°C 3 1 2 4 Gate to Source Voltage VGS (V) 5 3 2SK975 Drain to Source Saturation , 0.1 0.05 0.05 0.1 0.2 2 0.5 1.0 Drain Current ID (A) 5 2SK975 Body to Drain Diode


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PDF 2SK975 2SK975 Hitachi DSA00388
1997 - 2SK975

Abstract: Hitachi DSA0015
Text: 2SK975 Silicon N-Channel MOS FET November 1996 Application High speed power switching , drive Outline TO-92 Mod D 32 1 1. Source 2. Drain G 3. Gate S 2SK975 , /µs Note 2 1. Pulse test 1 1 2SK975 Maximum Safe Operation Area Power vs , 2SK975 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage , VGS = 0, ­5 V 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) 5 2SK975 Notice


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PDF 2SK975 2SK975 Hitachi DSA0015
2011 - Not Available

Abstract: No abstract text available
Text: Preliminary Datasheet 2SK975 Silicon N Channel MOS FET Application High speed power switching , Page 1 of 6 2SK975 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source , of 6 2SK975 Preliminary Main Characteristics Power vs. Temperature Derating 1.5 10 s s , ) R07DS0434EJ0300 Rev.3.00 Jun 07, 2011 Page 3 of 6 2SK975 Static Drain to Source on State Resistance vs , of 6 2SK975 Reverse Drain Current vs. Source to Drain Voltage 2.0 Preliminary Reverse


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PDF 2SK975 R07DS0434EJ0300 REJ03G0905-0200) PRSS0003DC-A
2005 - 2SK975TZ

Abstract: 2SK975 PRSS0003DC-A
Text: 2SK975 Silicon N Channel MOS FET REJ03G0905-0200 (Previous: ADE-208-1243) Rev.2.00 Sep 07 , , 2005 page 1 of 6 2SK975 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , , VGS = 10 V, RL = 30 IF = 1.5 A, VGS = 0 IF = 1.5 A, VGS = 0, diF/dt = 50 A/µs 2SK975 , ) Static Drain to Source on State Resistance RDS (on) () 2SK975 Pulse Test ID = 2 A 0.8 1A , ) 5 2SK975 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A


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PDF 2SK975 REJ03G0905-0200 ADE-208-1243) PRSS0003DC-A 2SK975TZ 2SK975 PRSS0003DC-A
2005 - 2SK975TZ

Abstract: 2SK975 PRSS0003DC-A 2sk975t
Text: . 2SK975 Silicon N Channel MOS FET REJ03G0905-0200 (Previous: ADE-208-1243) Rev.2.00 Sep 07, 2005 , 1 of 6 2SK975 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol , , VGS = 10 V, RL = 30 IF = 1.5 A, VGS = 0 IF = 1.5 A, VGS = 0, diF/dt = 50 A/µs 2SK975 , ) Static Drain to Source on State Resistance RDS (on) () 2SK975 Pulse Test ID = 2 A 0.8 1A , ) 5 2SK975 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A


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PDF
2011 - 2SK975TZ-E

Abstract: No abstract text available
Text: Preliminary Datasheet 2SK975 R07DS0434EJ0300 (Previous: REJ03G0905-0200) Rev.3.00 Jun 07 , 2SK975 Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max , 2SK975 Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation , RDS (on) (Ω) 2SK975 Pulse Test ID = 2 A 0.8 1A 0.5 A VGS = 4 V 0.6 0.4 2 A 0.5 , 2SK975 Preliminary Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A


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PDF 2SK975 R07DS0434EJ0300 REJ03G0905-0200) PRSS0003DC-A 2SK975TZ-E
HITACHI Power MOSFET Arrays

Abstract: 2sk1299 2SK975 4AK16 4AK15 2SK973 2SK972 2SK971 Hitachi Scans-001 2SK1919
Text: 0.4 0.53 0.25 0.38 2 19 120 2SK973 © 4AK25 60 ±20 1.5 24 0.47 0.6 0.35 0.45 1.5 15 80 2SK975 , 2SJ182 2SJ234 2SK974 2SK975 2SJ175 2SJ246 2SK970 2SK1093 2SJ214 2SJ219 2SK971 2SK1094 2SK1648 2SJ220 , 0.4 4 6.5 3.5 4.5 0.35 6 32 35 TO-92M 2SK975 60 ±20 1.5 0.9 0.4 0.55 0.3 0.4 1.5 15 80 140 TO


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PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 HITACHI Power MOSFET Arrays 2sk1299 2SK975 4AK16 2SK973 2SK972 2SK971 Hitachi Scans-001 2SK1919
2sj217

Abstract: pf0030 hitachi 2SJ220 2SJ214 PF0042 PF0030 KWSA103 PF0040 2SK1919 hitachi S Mosfet pf0042
Text: 2SK975 2SJ175 2SJ246 2SK970 2SK1093 2SJ214 2SJ219 2SK971 2SK1094 2SK1648 2SJ220 2SJ242 2SK972 2SK1095 , 0.4 1.8 2.5 1.3 1.7 0.35 6 34 33 2SK1337 100 0.3 0.4 4 6.5 3.5 4.5 0.35 6 32 35 TO-92M 2SK975 60 Â


OCR Scan
PDF 303L/3Â KWSA103 HWSA10I HWSB10I HWSA01 PF0030 PP0031 PF0040 PP004I 2sj217 pf0030 hitachi 2SJ220 2SJ214 PF0042 2SK1919 hitachi S Mosfet pf0042
2SK44

Abstract: 2SJ221 2SJ235 2SK580 2SK579 2SK1153 2SK1152 2SK1151 2SK513 2SJ214
Text: 30-50W 50-100W 100-200W 200W DC 5-12V 2SJ182 2SJ234 2SK974 2SK975 2SJ175 2SJ246 2SK970 2SK1093 2SJ214 , 2SK1337 100 0.3 0.4 4 6.5 3.5 4.5 0.35 6 32 35 TO-92M 2SK975 60 ±20 1.5 0.9 0.4 0.55 0.3 0.4 1.5 15 80


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK44 2SJ221 2SJ235 2SK513 2SJ214
2SK1254

Abstract: 2sj177 4AK18 4AK17 4AK16 4AK15 2SK975 2SK973 Mosfet transistor hitachi 2SK971
Text: 0.4 0.53 0.25 0.38 2 19 120 2SK973 © 4AK25 60 ±20 1.5 24 0.47 0.6 0.35 0.45 1.5 15 80 2SK975 , -92M 2SK975 60 ±20 1.5 0.9 0.4 0.55 0.3 0.4 1.5 15 80 140 TO-126 2SK1Z70 60 ±20 2 10 0.4 0.55 0.3 0.4 1.5


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PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1254 2sj177 4AK18 4AK17 4AK16 2SK975 2SK973 Mosfet transistor hitachi 2SK971
2sj2 high voltage p channel mosfet

Abstract: 2sj2 high voltage mosfet 2SK1778 2SJ182 2SJ299 2SK1763 2SJ175 2SK1204 Hitachi Scans-001 2sk513 o
Text: 0.4 0.53 0.25 0.38 2 19 120 2SK973 © 4AK25 60 ±20 1.5 24 0.47 0.6 0.35 0.45 1.5 15 80 2SK975 , 2SJ182 2SJ234 2SK974 2SK975 2SJ175 2SJ246 2SK970 2SK1093 2SJ214 2SJ219 2SK971 2SK1094 2SK1648 2SJ220 , -92M 2SK975 60 ±20 1.5 0.9 0.4 0.55 0.3 0.4 1.5 15 80 140 TO-126 2SK1Z70 60 ±20 2 10 0.4 0.55 0.3 0.4 1.5


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PDF
2SJ235

Abstract: 2SK1878 2SJ299 2sk1299 2SK580 2SK579 2SK1153 2SK1152 2SK1151 2sk mosfet
Text: 30-50W 50-100W 100-200W 200W DC 5-12V 2SJ182 2SJ234 2SK974 2SK975 2SJ175 2SJ246 2SK970 2SK1093 2SJ214 , 0.4 4 6.5 3.5 4.5 0.35 6 32 35 TO-92M 2SK975 60 ±20 1.5 0.9 0.4 0.55 0.3 0.4 1.5 15 80 140 TO


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PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2SK1878 2SJ299 2sk1299 2sk mosfet
1999 - Hitachi DSA002787

Abstract: No abstract text available
Text: (on) - See characteristic curves of 2SK975 3 4AK25 4 4AK25 5 4AK25 When


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PDF 4AK25 Hitachi DSA002787
1999 - Hitachi DSA00279

Abstract: No abstract text available
Text: 2SK975 2 2SK1764 3 2SK1764 When using this document, keep the following in mind: 1. This


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PDF 2SK1764 Hitachi DSA00279
1998 - MOS FET Array

Abstract: Hitachi DSA002751
Text: curves of 2SK975 3 4AK25 Maximum Channel Dissipation Curve 6 Maximum Channel Dissipation Curve 30


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PDF 4AK25 SP-10 D-85622 MOS FET Array Hitachi DSA002751
2sj177

Abstract: 2sk1299 2SK1763 2SK1878 2SJ279 2SJ278 2sj235 2SJ245 2SJ244 2SK1579
Text: 2SK1337 100 0.3 0.4 4 6.5 3.5 4.5 0.35 6 32 35 TO-92M 2SK975 60 ±20 1.5 0.9 0.4 0.55 0.3 0.4 1.5 15 80


OCR Scan
PDF 2SJ244 2SJ246 2SJ245 2SJ317 2SJ298 2SJ300 2SJ299 2SJ278 2SJ279 2SJ290 2sj177 2sk1299 2SK1763 2SK1878 2SJ279 2SJ278 2sj235 2SJ245 2SJ244 2SK1579
2SJ235

Abstract: 2sk1299 mosfet hitachi 2SK1698 2SK1697 2SK1579 2SK1337 2SK1336 2SJ250 2SJ244
Text: -92M 2SK975 60 ±20 1.5 0.9 0.4 0.55 0.3 0.4 1.5 15 80 140 TO-126 2SK1Z70 60 ±20 2 10 0.4 0.55 0.3 0.4 1.5


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PDF
2000 - 2SK975

Abstract: 4AK25 SP-10 DSA003638
Text: See characteristic curves of 2SK975 3 4AK25 Maximum Channel Dissipation Curve 4 Maximum


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PDF 4AK25 ADE-208-1207 SP-10 2SK975 4AK25 SP-10 DSA003638
2000 - dc-dc converter hitachi

Abstract: 2SK1764 2SK975 DSA003639
Text: See characteristics curves of 2SK975 2 2SK1764 Safe Operation Area 10 Drain Current D


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PDF 2SK1764 ADE-208-1317 dc-dc converter hitachi 2SK1764 2SK975 DSA003639
1999 - 2SK975

Abstract: 4AK25 SP-10 Hitachi DSA00388
Text: of 2SK975 3 4AK25 Maximum Channel Dissipation Curve 4 Maximum Channel Dissipation Curve


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PDF 4AK25 SP-10 2SK975 4AK25 SP-10 Hitachi DSA00388
2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent .model 2SK216 DRUM DRIVER 2sj44
Text: drive Paper feeder Drum driver 12 6AM12, 6 A M 13, 6AM14 Typical equivalent circuit 27 , ber 2SK1336 2SK975 2SJ182 2SK2796 2SK1299 TO-220AB Electrical Characteristics (typ) Pch*' ^DS2SK2802 (Q_2Sj . X 2SK1336 (1.3) 2SK1687 (1.3) O'2SJ4S2 <5.0) O 2S<2569(I 9) + ( 2SK975 ) (0.3 , 2SK1337 TO-92M DPAK 2SK975 2SJ234 2SJ246 2SJ182 2SJ245 2SK1299 2SK1254 LDPAK 2SJ214 2SJ219


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PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent .model 2SK216 DRUM DRIVER 2sj44
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