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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2SK596S-A ON Semiconductor Rochester Electronics 23,000 $0.09 $0.07
2SK596S-C ON Semiconductor Rochester Electronics 4,839,990 $0.09 $0.07
ACNL-X2-160X150-TA2-SK59L SMC Corporation of America Allied Electronics & Automation - $1026.29 $1026.29

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2SK59 datasheet (39)

Part Manufacturer Description Type PDF
2SK59 InterFET N-Channel silicon junction field-effect transistor Original PDF
2SK59 Others FET Data Book Scan PDF
2SK59 Others Shortform Datasheet & Cross References Data Scan PDF
2SK590 Others FET Data Book Scan PDF
2SK591 NEC Semiconductor Selection Guide 1995 Original PDF
2SK591 Others FET Data Book Scan PDF
2SK591 NEC N-channel MOS feild effect power transistor. Scan PDF
2SK593 Others GaAs N-Channel MES FET Scan PDF
2SK593 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SK593 Others FET Data Book Scan PDF
2SK595 Others General Purpose Transistors Scan PDF
2SK595 Others Scan PDF
2SK595 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SK595 Others FET Data Book Scan PDF
2SK595 Sanyo Semiconductor N-Channel Junction Silicon FET, Capacitor Microphone Apps Scan PDF
2SK595 Sanyo Semiconductor Scan PDF
2SK596 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SK596 Others Scan PDF
2SK596 Others FET Data Book Scan PDF
2SK596 Sanyo Semiconductor Scan PDF

2SK59 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: E2 9-97 Japanese Equivalent JFET Types_ SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFNI 05 Process NJ16 NJ16 N J16 NJ16 Unit Limit N N N N Channel Channel Channel Channel -2 0 -5 0 -3 0 -5 0 1.0 Parameters Conditions BVg sS I g = - 1 .0 (JA V M in IG S S Vgs = ( ) , V ds = 0 nA Max 0.10 ( - 1 0 V) (- 30 V


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PDF 2SK17 2SK40 2SK59 2SK105 IFN17 IFN40 IFN59
2001 - 2SK105 Datasheet

Abstract: 2SK105 to-226aa 2SK59 2sk105 jfet 2SK40 TO226AA 2SK17 2SK113 2d201
Text: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel N Channel BVGSS IG = ­ 1.0 µA V Min ­ 20 ­ 50 ­ 30 ­ 50 ­ 50 IGSS VGS = ( ), VDS = Ø


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PDF 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 2SK105 Datasheet 2SK105 to-226aa 2SK59 2sk105 jfet 2SK40 TO226AA 2SK17 2SK113 2d201
2SK68A

Abstract: 2SK44 D 2SK70 2SK79 2SK63 2SK44 2SK73 2SK68 2SK163 2SK46
Text: » G 270m -lOn -6 lm 16. 5» 10 -0.45 -4. 95 10 30« 2. 7» 10 IDSS 2SK59 h 2 C-MIC N D -30 GDS -30 , 2SK59 190 -15 0 VON=10Vmax. í¿=4typ 2SJ18 45 GS 2SK60 0. 1 2.5 3.5 100M PG=18dBtyp f


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PDF 2SK43 2SK44 2SK45 2SK46 2SK65 2SK66 2SK1109 2SK67 2SK68A 2SK44 D 2SK70 2SK79 2SK63 2SK73 2SK68 2SK163 2SK46
1999 - 2SK105 DGS

Abstract: 2SK105 V6010 2sj44
Text: D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process Parameters Conditions Unit Limit 2SK17 IFN17 NJ16 N Channel 2SK40 IFN40 NJ16 N Channel 2SK59 IFN59 NJ16 N Channel 2SK105 IFN105 NJ16 N Channel BVGSS IGSS VGS(off) IDSS gfs Ciss Crss IG = ­ 1.0 µA VGS = ( ), VDS = Ø VDS = ( ), ID = 1.0 nA VDS = ( ), VGS = Ø VDS = ( ), VGS = Ø VGS = ( ), VDS = ( ) VGS = ( ), VDS = ( ) V Min nA Max V Min/Max mA Min/Max mS Typ pF Typ


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PDF 2SK17 IFN17 2SK40 IFN40 2SK59 IFN59 2SK105 IFN105 O-226AA 2SK105 DGS V6010 2sj44
2SK105

Abstract: 2SK105 F aX 010 2SK105 E 2sk40 2sk59
Text: E2 Ja g a n e s ^ tju iv a le rv U F F T ^ g e ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ SILICON JUNCTION FIELD-EFFECT TRANSISTORS 9-97 Japanese InterFET Process Parameters BVg ss 2SK17 IFN17 NJ16 2SK40 IFN40 NJ16 2SK59 IFN59 NJ16 2SK105 IFN105 NJ16 Conditions Unit Limit V Min nA Max N Channel -2 0 N Channel -5 0 1.0 N Channel -3 0 1.0 ( - i o V) N Channel -5 0 Iq = Vgs - 1.0 [ik IGS S V GS (off) I DSS g fs C ¡ss C rss = 0, Vds = 0 ( - 10 V) 0.10 (- 30


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PDF 2SK17 IFN17 2SK40 IFN40 2SK59 IFN59 2SK105 IFN105 2SK105 F aX 010 2SK105 E
2SK105

Abstract: 2SK59 SGD 2SK40 2SK40 SGD 2SK17 2SK105 E 2SK17 SGD IFN105 interfet 2SK59
Text: E 2 9_g7 SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFN105 Process NJ16 NJ16 NJ16 NJ16 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel BVgss ig = - 1.0 ma V Min -20 -50 -30 -50 'gss Vgs = (),Vds = 0 nA Max 0.10 (-10V) 1.0 (- 30 V) 1.0 (-10V) 1.0 (— 30 V) VGS(off) Vos = 0, Id = 1-OnA V Min/Max -0.5/-6.0 (10 V) - 0.4/- 5.0 (15 V) - 0.4/- 5.0 (10V) -0.25/-4.5 (5.0 V) Idss Vds = (),Vgs = 0 mA Min/Max 0.3/6.5 (10V


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PDF 2SK17 2SK40 2SK59 2SK105 IFN17 IFN40 IFN59 IFN105 2SK59 SGD 2SK40 SGD 2SK105 E 2SK17 SGD IFN105 interfet
1999 - J555

Abstract: 2SK17 2SK40 2SK105 E J231 transistor j556 2N4221 transistor j557
Text: Datasheet 2SK17, 2SK40 2SK59 , 2SK105 IFN17, IFN40 IFN59, IFN105 J201, J202 J203, J204 J230, J231 J232 J500


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PDF 2N3954, 2N3955 2N3956 2N3957, 2N3958 2N4220, 2N4220A 2N4221, 2N4221A 2N4338, J555 2SK17 2SK40 2SK105 E J231 transistor j556 2N4221 transistor j557
2SK68A

Abstract: 2SK44 2sK30 fet 2SK34 2SK60 FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP
Text: . 5» 10 -0.45 -4. 95 10 30« 2. 7» 10 IDSS 2SK59 h 2 C-MIC N D -30 GDS -30 s 10m G 50m -ln -10 , 49 Dual PET 2SK58 0.5 3 120 100k 50 SGD 2SK59 190 -15 0 VON=10Vmax. í¿=4typ


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PDF 2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK65 2SK66 2SK1109 2SK67 2SK68A 2SK44 2sK30 fet 2SK34 2SK60 FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP
1999 - 2SK146

Abstract: 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2sk152 equivalent 2SK147 Japanese Transistor
Text: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel N Channel BVGSS IG = ­ 1.0 µA V Min ­ 20 ­ 50 ­ 30 ­ 50 ­ 50 IGSS VGS = ( ), VDS = Ø


Original
PDF 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2sk152 equivalent 2SK147 Japanese Transistor
2sk82

Abstract: 2SK68A 2SK76 2sk77 datasheet 2sk97 2SK41 Equivalent FD1840 2SK44 equivalent 2SK97 2SK40
Text: GDS 2SK60 24 24 1.6 5.5 -10 GDO 2SK59 IDSS " 6.5 3.5 2SK54 2SK55


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PDF 2N3954 E-400 FD1840 250/unit 2N4392 2N4393 2SK11 2SK12 2SK13 2SK15 2sk82 2SK68A 2SK76 2sk77 datasheet 2sk97 2SK41 Equivalent FD1840 2SK44 equivalent 2SK97 2SK40
Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 2sd103 bup 3130 C3885A 2SA102 bfq59 34d 937 086
Text: No file text available


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PDF
NT101

Abstract: bf503 KT-934 Kt606 SEMICON INDEXES Mps56 transistors 2SA749 72284 2sk81 2SB618
Text: No file text available


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PDF
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: No file text available


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: No file text available


Original
PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
2SK41

Abstract: 2SK331
Text: 125 0 .0 6 - 3 .0 /1 0 2 /1 0 - 2SK331 C ap ac ito r M icrophone 2SK597 2026 S , N


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PDF 2SD1238 2SD1371 2SD1372 2SK304 200IB 2SK331 2SK597 2SK336 2SK583 3SK108 2SK41 2SK331
d 2037 transistor

Abstract: CAPACITOR MICROPHONE 2SK596 d 2037
Text:  2SK596 2037 N-Chanoel Junction Silicon Field-Effect Transistor Capacitor Microphone Applications Features . Especially suited for use In audio, telephone capacitor aloropbones • Excellent voltage characteristic • Excellent transient characteristic . Adoption of PBET process Absolute Maximum Ratings at Ta=25°C Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature ;GD0 TJ Tstg -20 10 1 100 125 -55 to +125 K1iQtrical


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PDF 2SK596 V100uA 2SX596 15pFtSee Vina10mV 110Hz 4157TA d 2037 transistor CAPACITOR MICROPHONE 2SK596 d 2037
2SC4211

Abstract: audio amplifier 2SC4920 2SC3923 2SC3922 2SC3921 2SC3920 2SA1866 2SA1865 2SA1864
Text: 01# 01" 125 - - 60 to 800 fiA§§ 10| - - - - 2SK595 CP3 Electrostatic microphone impedance


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PDF 2SA1528 2SA1529 2SC3920 2SC3921 2SC3922 FC101 2SA1622 2SC4211 2SA1622/2SC4211 FC141 audio amplifier 2SC4920 2SC3923 2SA1866 2SA1865 2SA1864
2sk303

Abstract: 2SK2219 P/N146071 2SK848 2SK436 SK174 2SK2171 sk184 2SK283 2sd22
Text: c c Q 2 SK 2 4 2 2SK283 2SK303 2SK334 2SK436 2SK443 2SK536 2SK543 2SK545 2SK595 2SK771 2SK848


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PDF 2SA1256 2SA1343 2SA1655 2SK2167 2SK2168 2SK2170 2SK2171 2SK2260 2SK2218 2SK2219 2sk303 P/N146071 2SK848 2SK436 SK174 sk184 2SK283 2sd22
2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 UPD16861 2SA733A
Text: No file text available


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PDF
transistor NEC 2SK2500

Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Text: No file text available


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PDF MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
2SC3199

Abstract: 2SK596 2SA733S 2SC945S 2SC1815S 2SC3488 2SK156 2SC2787 2SC2785 TO92S package
Text: ) PD (mW) IDSS (A) 2SK156 2SK596 NPN NPN 20 20 10 10 100 100 80-800


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PDF O-92S 2SC1815S 2SC945S 2SC1959S 2SC2710 2SC1740S 2SC1741S 2SC3199 AD825 10-100K 2SC3199 2SK596 2SA733S 2SC3488 2SK156 2SC2787 2SC2785 TO92S package
2003 - TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Text: No file text available


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PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
2SJ99

Abstract: 2SK354 2SK336 2SK356 2sk3542 2SK347 2sk351 2SK354A 2SK345 2SK353
Text: ) Zin=20MQmin f=lkHz 127 GDS, ft# 2SK597 2SK331 13 3 0 10 0.6 1.5 Ik lk A VGS=30«Vijax VDS=10V, ID


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PDF 2SK331 2SK332 2SK333 2SK334 2SK336 2SK337 2SK354 8/12GHz 2SK354A 2SK355 2SJ99 2SK354 2SK356 2sk3542 2SK347 2sk351 2SK354A 2SK345 2SK353
Not Available

Abstract: No abstract text available
Text: l . ( 2SK595 ) (2) TRs , FETs (Package : Other than CP) General Specification SMC P h as no i n


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PDF 2SA1338/2SC3392
Not Available

Abstract: No abstract text available
Text: -1 1 0 v NO (Note) M a rk in g : C I dss r a n k : 21,22,23 For CP package, use the 2SK595. C


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PDF G0G7431 2SK1375 T-29-Z5 2SK1375-applied
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