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VFC320BM2 Texas Instruments Voltage-to-Frequency and Frequency-to-Voltage Converter 10-TO-100
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LM2917D8R Texas Instruments VOLTAGE-FREQUENCY CONVERTER, PDSO8
VFC100BG1 Texas Instruments Synchronized Voltage-To-Frequency Converter 16-CDIP
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VFC110AG2 Texas Instruments High Frequency Voltage-to-Frequency Converter 14-CDIP SB
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2SK372-BL(F) Toshiba America Electronic Components Chip1Stop 630 $3.54 $2.89

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2007 - 2SK372

Abstract: No abstract text available
Text: ) Gate-source cut-off voltage VGS (OFF) Forward transfer admittance Yfs VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 25 60 mS Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz 75 pF Reverse transfer capacitance Crss VDG = 10 V, ID = 0, f = 1 MHz 15 , ) Note 1: IDSS classification GR: 5.0~10.0 mA, BL : 8.0~16.0 mA, V: 14.0~30.0 mA Note 2: Typical IDSS


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PDF 2SK372 2SK372
2SK372

Abstract: No abstract text available
Text: Transfer Admittance lYfel VDS = 10V, Vq§ = 0, f = 1kHz (Note 2) 25 60 — mS Input Capacitance Ciss VDs = 10V, Vqs = 0, f = 1MHz — 75 — pF Reverse Transfer Capacitance Crss VdG = 10V, Id = 0, f = 1MHz â , : IdSS Classification GR : 5.0-10.0mA, BL : 8.0-16.0mA, Y : 14.0~30.0mA Note 2 : Concition of the typical , (low voltage region) 12 COMMON SOURCE Ta = 25°C = 0V — (jro 0.05 f , 7 / )SS=5 4mA / ! > f / 4.5 y


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PDF 2SK372 55MAX 2SK372
2003 - 2SK372

Abstract: No abstract text available
Text: ïYfsï VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 25 60 ¾ mS Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ¾ 75 ¾ pF Reverse transfer capacitance Crss VDG = 10 V, ID = 0, f = 1 MHz ¾ 15 ¾ pF ¾ 20 ¾ W Drain-source ON resistance Note 1: IDSS classification RDS (ON) VDS = 10 mV, VGS = 0 (Note 2) GR: 5.0~10.0 mA, BL : 8.0


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PDF 2SK372 2SK372
2007 - 2SK372

Abstract: No abstract text available
Text: nA V mA V mS pF pF VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) VDS = 10 V, VGS = 0, f = 1 MHz VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 mV, VGS = 0 Note 1: IDSS classification GR: 5.0~10.0 mA, BL : 8.0


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PDF 2SK372 2SK372
2004 - 2SK372

Abstract: No abstract text available
Text: Yfs VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 25 60 Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz 75 pF Reverse transfer capacitance Crss VDG = 10 V, ID = 0, f = 1 MHz 15 pF 20 Drain-source ON resistance Note 1: IDSS classification RDS (ON) VDS = 10 mV, VGS = 0 (Note 2) GR: 5.0~10.0 mA, BL : 8.0~16.0 mA, V: 14.0~30.0


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PDF 2SK372 2SK372
2SK372

Abstract: No abstract text available
Text: = 0, f = 1kHz (Note 2) 25 60 — mS Input Capacitance Ciss VDS = 10V, VGS = 0, f = 1MHz — 75 — PF Reverse Transfer Capacitance ^rss VDG=10V, Id = 0, f = 1MHz — 15 — pF Drain-Source ON , , BL : 8.0~16.0mA, Y : 14.0~30.0mA Note 2 : Concition of the typical Value lDSS= 15mA _961001 EAA2 # , vds (low voltage region) 12 COMMON SOURCE Ta = 25°C -ov- 0.05 — f , VQS (V) |Yfs| - IDSS 50 30. COMMON SOURCE toss : vDS=iov vGS=o lYfsl : VDS = 10V vGs=o f = 1kHz Ta


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PDF 2SK372 55MAX. 2SK372
2SK3722

Abstract: 2SK372
Text: , VGS = 0, f = 1 kHz (Note 2) 25 60 mS Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz 75 pF Reverse transfer capacitance Crss VDG = 10 V, ID = 0, f = 1 , RDS (ON) VDS = 10 mV, VGS = 0 (Note 2) GR: 5.0~10.0 mA, BL : 8.0~16.0 mA, Y: 14.0~30.0 mA


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PDF 2SK372 2SK3722 2SK372
Not Available

Abstract: No abstract text available
Text: = 10V, id = o.1/, a Forward Transfer VDg = 10V, VGg = 0, f = 1kHz lYfsl Admittance (Note 2) VDg = 10V, VGg = 0, f = 1MHz Input Capacitance Ciss Reverse Transfer VDG =10V , I d = 0, f = 1MHz , ) 20 Note 1 : Id SS Classification GR : 5.0—10.0mA, BL : 8.0—16.0mA, Y : 14.0—30.0mA Note 2 , vulnerability to physical stress. It is the responsibility o f the buyer, w hen utilizing TO SH IBA products, to observe standards o f safety, and to avoid situations in which a m alfunction or failure o f a TO


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PDF 2SK372 55MAX.
2009 - 2SK3724

Abstract: No abstract text available
Text: = 10 V, VGS = 0, f = 1 kHz (Note 2) VDS = 10 V, VGS = 0, f = 1 MHz VDG = 10 V, ID = 0, f = 1 MHz VDS , V mA V mS pF pF Note 1: IDSS classification GR: 5.0~10.0 mA, BL : 8.0~16.0 mA, V: 14.0~30.0 mA


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PDF 2SK372 2SK3724
2SK372

Abstract: No abstract text available
Text: nO cO t o = _ 1 i ì n A f M f l Y Ì' Ì TM = _ 3 -V, 0 V . Ì/ * 'V · \jrO RDS (ON) = 2 0 n (Typ.) Low , 10V, VGg = 0, f = 1kHz lYfsl (Note 2) Vd S = 10V, V q s = 0, f = 1MHz Ciss Vd G = 10V, I d = 0, f , , BL : 8.0~ 16.0mA, Y : 14.0-30.0mA Note 2 : Concition of the typical Value Ij)gg = 15mA 961001EAA2 , ) f / H O CO X 5 > J1 O DRAIN CURRENT IDgg (mA) . / / f 1 H " 3 `Tj3 < O g 1 £


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PDF 2SK372 --40V 2SK372
2SK372

Abstract: VGS-30V
Text: = 10V, Vgs = 0, f = 1kHz (Note 2) 25 60 — mS Input Capacitance Ciss VDs = 10V, Vgs = 0, f = 1MHz — 75 — pF Reverse Transfer Capacitance Crss VDG = 10V, Id = 0, f = 1MHz — 15 — pF , : 5.0-10.0mA, BL : 8.0-16.0mA, Y : 14.0~30.0mA Note 2 : Concition of the typical Value IosS-l^mA 1 2001-05-31 , 0V- Go 0.05 f 0.10 0.15 — — -0.20 / â , / ! j f / 4.5 ~T / 24 20 16 12 -0.6 -0.4 -0.2 500 GATE-SOURCE


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PDF 2SK372 55max 2SK372 VGS-30V
2SK372

Abstract: EIAJ C-3
Text: 0.1^A -0.3 — -1.2 V Forward Transfer Admittance lYfsl VDS = 10V, Vqq = 0, f = 1kHz (Note 2) 25 60 — mS Input Capacitance Ciss vds = 10v, vgs = 0, f = 1MHz — 75 — PF Reverse Transfer Capacitance ^rss VDG=10V, Id = 0, f = 1MHz — 15 — pF Drain-Source ON Resistance RDS (ON) VDS = 10mV, VGS = 0 (Note 2) — 20 — n Note 1 : IdSS Classification GR : 5.0~10.0mA, BL : 8.0~16.0mA, Y : 14.0~30.0mA , 0.05 — f o.io — 0.15 — — /- -0.20 / —0.30 -0.25


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PDF 2SK372 55MAX. EIAJ C-3
2SC3378

Abstract: 25A1048
Text: Drive & Out High 0 Muting & SW FM RF, M IX OSC AM CO NV. F M /A M IF AM FF, C O NV IF F M /A M RF, M IX , f (Hz) 1K 1K 1K - O C /> Rs (K il) 10 10 10 - m "D X h-* C D > O I-I -3 2SC2«58 f * 4 C B A , ImA) 10 10 10 10 10 10 10 10 10 -1 0 -1 0 -1 0 10 10 R: 40~80 O: 70-140 Y: 120~240 GR: 200-400 BL , ) (3.6) (32) (32) (V) -1 0 -1 0 -1 0 -1 0 -1 0 -1 0 -1 0 -1 0 -1 0 10 10 10 -1 0 f (MHz) 1 1 1 1 1 1 1 1


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PDF 2SC2458 I2SA1048 2SK365 2SK367 2SK370 2SK371 2SK372 2SC3378 25A1048
2SC3378

Abstract: 2SK118 2SC245S 2SC3267 2SC2710 2SC2469 2SC2458 2SA1150 2SK366 2SA1048
Text: . (TYP.) VCE (V)' "C >Â) (V) ic (mA) IB (mA) (MHz) tu _ ^ £ 'C (mA) (dB) 'C (mA) f (Hz) Rg , 100M - > JUNCTION FET^ R: 40-80 0:70-140 Y: 120-240 6R: 200-400 BL : 350-700 * Y: 100-200 * 0 , max. Typ* No. vgdo 'g pd vos vgs vds vds vgd f vds 'd f Rg N-Ch«niwl : P-Ch*nnil (v) (ma) (mw , X H CD > rH H H n m H m o Kl «J * O: 1-3 Y: 2.5-6 GR: 5—10 * Y: 3—7 GR: 6—14 BL


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PDF 2SC2458 2SA1048 2SC245S 2sk367 2sk370 2sk371 2sk372 2sj105 2sj107 2SC3378 2SK118 2SC3267 2SC2710 2SC2469 2SC2458 2SA1150 2SK366
2SC3378

Abstract: fet 2sK161 2sk192a 2SK184 2SC2710 2SC2469 2SC2458 2SA1297 2SA1150 2SA1049
Text: £ 'C (mA) (dB) Ul — H ic (mA) f (Hz) Rfl (Kn) 2SC2458 :2SA1048 50 150 200 70-700/400 6 2 0.25/0.3 100 , - - - 350 6 1 (4.0) 6 1 100M - > JUNCTION FET^ R: 40-80 0: 70-140 Y: 120-240 GR: 200-400 BL : 350-700 , .) NF MAX. Typ* No. VQDO ■G PD vos VGS VDS VDS VGD f VDS >D f Rg N-ChiniMl : P-Ch*nnil (V) (mA , n m H rn D II «J j * O: 1-3 Y: 2.5~6 GR: 5~10 * Y: 3-7 GR: 6—14 BL : 12-24 -7-


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PDF 2SC2458 2SA1048 2SC24S8 2SC2469 2SA1049 2SC2710 2SA1150 2SK367 2SK370 2SC3378 fet 2sK161 2sk192a 2SK184 2SC2710 2SC2469 2SC2458 2SA1297
2sk405 2sj115

Abstract: 2SK389 2SK400 2SK385 2SK370 2SK381 2SK336 2SK388 2SJ114 2SJ109
Text: - 46 - M « tt S m a f » t » í 1 K S * t ts s. n m m a na^ic) Pd/Pch (W) Igss (max) (A) (V) * (V) » * (A) » ♦ Vgs (V) (min) (A) (max) (A) Vds (V) / ■\ (min) (V) (max) (V) Vds (V) Id (A) (min) (S) Vds (V) Id (A) 2SK368 mz LF HV A, CC N , ) Vos (V) Vds (V) typ dB max dB f (Hz) Rg (0) Vgs (V) Id (A) 13 3 0 10 0. 5 100 100k 105A , Zin=18M«min f=lk»z 127 DCS 2SK377 3 800M PG=10dBtyp f =800MHz 91A DSG 2SK378 800 30 0 20


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PDF 2SK368 2SK369 2SK370 2SK371 2SK372 2SK386 2SK387 2SK388 20mVmax 2SJ109 2sk405 2sj115 2SK389 2SK400 2SK385 2SK370 2SK381 2SK336 2SK388 2SJ114
2SJ74

Abstract: 2SC3136 2SK118 2SK241 2SC1815 2SA1015 2SA1349 2SA1015 2sc2240 equivalent 2SC1815 2SJ109
Text: (mA) (80) 10 1 General Purpose BL : 350~700 50 150 400 200~ 700 6 2 , ) (GHz) (mA) (mA) (dB) NF typ. VCE IC f (V) (mA) (GHz) (dB) f VCE IC (V) (mA) (GHz , : 200~700 VCE IC (V) (mA) BL : 350~700 *Y : 100200 *O : 100~200 NF max B : 350~1200 @: (35 × 30 × 1 mm) 20 IC VCE (V) (mA) Note f (Hz) Rg (k) 1 100 M , (V) (mA) (mW) (mA) VDS (V) VGS (V) (mS) VDS (V) VGS (V) (pF) VGD f


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PDF SC-43) 2SC1815 2SA1015 2SC732TM 2SC1815 2SC2240 2SA970 2SC3381 2SA1349 2SJ74 2SC3136 2SK118 2SK241 2SC1815 2SA1015 2SA1349 2SA1015 2sc2240 equivalent 2SJ109
transistor k117

Abstract: transistor k363 k117 transistor K369 transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor
Text: 2 100 2 4 IV ) V C E (sat) M A X . f j T Y P . (M IN ) !8 Im A ) 10 10 1 20 100 1 10 10 3 V CE , N 2410 R N 2411 (k n j 4.7 10 22 47 2 .2 4.7 10 22 47 4.7 10 4.7 10 R2 ( k f i) 4.7 10 22 47 47 47 , 4.7 10 Equivalent Circuit TOSHIBA «)HPOBAnON:=^= s=s -2 8 - ï î f f s s g ï t , NF M ax. (T y p ,) 5 10 *L - (d B) V DS (V ) 15 10 'd (m A ) l D SS 0.5 f (H z) 120 10 Rg (k n , 75358CS TA 7 5 3 5 8C F TA 75557P TA 7 5 5 5 7S TA 75557F TA 75558P TA 7 5 5 5 8S TA 75558F TA 75559P TA 7


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PDF 2SC2458 2SC2459 2SC2710 2SC3267 2SC3378 2SC3488 75393P 75393S 75393F transistor k117 transistor k363 k117 transistor K369 transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor
2sc 1203

Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC1815O 2SC1815 NPN SOT-23 2SC 1207
Text: PN P PN P + N PN H N 2C 01F U H N 2 A 0 1 F U - I. List of Lead Type and usv N PN PN P N PN , H N 1C 01F H N 1 A 0 1 F H N 1B 01F H N 1C 01F U H N 1 A 0 1 F U H N 1 B 0 1 F U 2SA 1015L 2SC , H F -U H F EQUIPM ENT Package Style TO-92 APPLICATION Super-Mini Power-Mini Super-Mini Quad U ltra , * PNP-TR V H F-U H F Low Noise NPN-TR Amp 2SC3268 2SC3607 2SC4318 2SC3609 2SC4315 2SC4320 2SC4324 2SC4839* 2SC4840* 2SC4841* 2SC4842* 2SC4843* 2SC4844* V H F-U H F NPN-TR OSC » NEW 77 5. List of


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PDF 1815L 2SC2240 2SC1627 2SC752G SC-70) SC-59) 2SC2713 2SC4210 2SA1621 2SC4209 2sc 1203 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC1815O 2SC1815 NPN SOT-23 2SC 1207
2Sj148

Abstract: 2sd1408 2SK364 2sc3281 2sc4793 2SK366 2SC3180N
Text: - 2SJ107 - Small Signal M O S F E T Switching Use TO-92 N-ch 2SK982 P-ch 2SJ148 TO-92(Mini


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PDF 2SC2705 2SC1627A 2SC2235 2SC2236 2SC3423 2SC3419 2SC3421 2SC3422 2SD880 2SD525 2Sj148 2sd1408 2SK364 2sc3281 2sc4793 2SK366 2SC3180N
2005 - 2SK3720

Abstract: ENN8173A marking KA
Text: =10V, VGS=0V, f =1kHz Ratings min typ max 15 Unit V ±10 12* 6.0* nA mA -2.2 11 VDS=10V, VGS=0V, f =1MHz VDS=10V, VGS=0V, f =1MHz VDS=10V, VGS=0V, f =100MHz 16 V mS 2.4 dB 2.0 VDS=10V, VGS=0V, f =100MHz See specified Test Circuit. pF 35 See , =10V VGS=0V ITR00807 VDS=10V f =100MHz 6 yfs - IDSS 3 24 PG, NF - ID 40 4 Drain-to-Source Voltage, VDS - V 20 f =1MHz VGS=0V 3 2 IT08680 Ciss, Crss - VDS 10 Input


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PDF 2SK3720 ENN8173A 2SK3720 ENN8173A marking KA
2003 - 2SK3728-01MR

Abstract: 2SK3728 2SK3728-01MR equivalent
Text: f =60Hz, t=6-sec. = = = = Electrical characteristics (Tc =25°C unless otherwise specified , =1.1A VDS=25V Min. 1.1 VDS =25V VGS=0V f =1MHz VCC=600V ID=1.1A VGS=10V RGS=10 VCC =450V ID , Drain-Source on-state Resistance RDS(on)= f (ID):80 µ s pulse test,Tch=25°C VGS=5.5V 10 ID [A] 25.0 Drain-Source On-state Resistance RDS(on)= f (Tch):ID=1.1A,VGS=10V 6.0V 22.5 6.5V 8.0 7.0V 20.0 , MOSFET Gate Threshold Voltage vs. Tch VGS(th)= f (Tch):VDS=VGS,ID=250µA Typical Gate Charge


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PDF 2SK3728-01MR O-220F 2SK3728-01MR 2SK3728 2SK3728-01MR equivalent
2010 - npd5564

Abstract: 2N4393 MOTOROLA KE4393 2sk162 2sk194 2SK146 2SK147 2sk162 hitachi npd5565 NPD5566
Text: JUNCTION FET Item Number Part Number Manufacturer V(BR)GSS IDSS g,. Min (S) Max VGS(Off) (V) (A) Max (V) lass Max (A) Clsa Max ( F ) PD Max (W) Derate at (WrC) Toper Max (OC) Package Style N-Channel JFETs, (Cont'd) 2SK364 2SK366 2SK240 2SK431 2SK170 UC704 2SK194 2SK194 ITE4091 ITE4091A J111A J111A J111A KE4393 KE4393 MPF4091 PMBF4393 PMBF4393 PN'4091 ,SMPJ111A SMPU1897 SMP3972 SMP4091 SMP4393 SOR4091 (A) SOR4393 (A) 504393 ToshibaCorp ToshibaCorp ToshibaCorp Hitachi Ltd ToshibaCorp


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PDF 2SK364 2SK366 2SK240 2SK431 2SK170 UC704 2SK194 ITE4091 ITE4091A npd5564 2N4393 MOTOROLA KE4393 2sk162 2SK146 2SK147 2sk162 hitachi npd5565 NPD5566
2003 - Not Available

Abstract: No abstract text available
Text: < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C *4 VDS< 450V *6 f =60Hz, t=60sec. = = = = , =125°C VDS=360V VGS=0V VGS=±30V VDS=0V ID=1.5A VGS=10V ID=1.5A VDS=25V VDS =25V VGS=0V f =1MHz VCC , ] 4.5 Typical Drain-Source on-state Resistance RDS(on)= f (ID):80 µ s pulse test,Tch=25°C VGS=6.5V 8 Drain-Source On-state Resistance RDS(on)= f (Tch):ID=1.5A,VGS=10V 7 7.0V 7.5V 8V 10V , Threshold Voltage vs. Tch VGS(th)= f (Tch):VDS=VGS,ID=250µA Typical Gate Charge Characteristics VGS=f(Qg


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PDF 2SK3726-01MR O-220F
2SK3720

Abstract: D1306
Text: VDS=10V, ID=100µA VDS=10V, VGS=0V, f =1kHz Ciss Crss VDS=10V, VGS=0V, f =1MHz VDS=10V, VGS=0V, f =1MHz PG NF VDS=10V, VGS=0V, f =100MHz, VDS=10V, VGS=0V, f =100MHz, min , 12 IT08681 yfs - IDSS 20 f =1MHz VGS=0V 5 2 IT08680 Ciss, Crss - VDS 10 , VDS=10V f =100MHz 36 5 , IDSS - mA ITR00807 PG, NF - ID 40 200 PG , PD -


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PDF 2SK3720 N8173 100MHz, IT08680 IT08682 100MHz ITR00807 2SK3720 D1306
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