The Datasheet Archive

2SK3683 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
2SK3683 2SK3683 ECAD Model Fuji Electric Fuji Power MOSFET SuperFAP-G series Target Specification Original PDF
2SK3683-01MR 2SK3683-01MR ECAD Model Fuji Electric Fuji Power MOSFET SuperFAP-G series Target Specification Original PDF
2SK3683-01MR 2SK3683-01MR ECAD Model Fuji Electric N-Channel Silicon Power MOSFET Original PDF

2SK3683 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - YG97256

Abstract: 2SK3683 MOSFET 2sk3683 fa5551 FA5550
Text: 680k 0.47uF 0.47uF 2SK3683 2SK3683 440uF (220uF*2) 0.1 100pF 220 470k 470k 10k 47k 47k ERA91


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PDF FA5550 Augu-2007 200uF 500uF YG97256 2SK3683 MOSFET 2sk3683 fa5551
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: 2SK3680-01 2SK3681-01 2SK3682-01 2SK3683-01MR 2SK3684-01L 2SK3684-01S 2SK3685-01 2SK3686-01


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
2SK3683

Abstract: 2SK3683-01MR
Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3683-01MR (500V/0.38/19A) 1) Package TO-220F15R 2) Absolute Maximum Ratings (Tc=25 unless otherwise specified) Ratings Units V DS 500 V Continuous Drain Current ID ±19 A Pulsed Drain Current ID(pulse) ±76 A V GS ±30 V IAR 19 A E AS 245.3 mJ dV DS/dt dV/dt 20 5 kV/us kV/us P Dc=25 95 W 2.16 W Symbols Items Drain-Source Voltage


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PDF 2SK3683-01MR 00V/0 38/19A) O-220F15R MT5F12582 2SK3683 2SK3683-01MR
2007 - mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 2SK3505-01MR 2SK3581-01L, S 2SK3682-01 2SK3683-01MR 2SK3684-01L, S 2SK3685-01 FML19N50G FMW25N50G


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PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
2002 - 2SK3679

Abstract: 2sk3598 2SK3599-01MR 2SK3677-01MR 2sk3680-01 2sk3580-01mr 2sk3603 2SK3532 2SK3469-01MR 2SK3532-01MR
Text: 2SK3468-01 2SK3469-01MR 2SK3512-01L, S 2SK3504-01 2SK3505-01MR 2SK3581-01L, S 2SK3682-01 2SK3683-01MR


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PDF 2SK3598-01 2SK3599-01MR 2SK3600-01L, 2SK3601-01 2SK3644-01 2SK3645-01MR 2SK3646-01L, 2SK3647-01 2SK3586-01 2SK3587-01MR 2SK3679 2sk3598 2SK3677-01MR 2sk3680-01 2sk3580-01mr 2sk3603 2SK3532 2SK3469-01MR 2SK3532-01MR
2003 - 2Sk3683

Abstract: 2SK3683-01MR equivalent 2SK3683-01MR MOSFET 2sk3683 Data sheet
Text: 2SK3683-01MR 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching No secondary breadown Avalanche-proof , Min. Typ. Max. 1.289 58.0 Units °C/W °C/W 1 2SK3683-01MR FUJI POWER MOSFET , 125 150 2 2SK3683-01MR FUJI POWER MOSFET Typical Gate Charge Characteristics VGS=f(Qg , ] 3 2SK3683-01MR 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV


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PDF 2SK3683-01MR O-220F 2Sk3683 2SK3683-01MR equivalent 2SK3683-01MR MOSFET 2sk3683 Data sheet
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