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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2SK368-Y(TE85L,F) Toshiba America Electronic Components Chip1Stop 2,850 $4.45 $3.63
2SK3680-01 Fuji Electric Co Ltd Allied Electronics & Automation 464 $8.68 $5.81
2SK3680-01SC Fuji Electric Co Ltd Chip1Stop 148 $53.80 $39.00
2SK3681-01 Fuji Electric Co Ltd Allied Electronics & Automation 363 $9.41 $6.58
2SK3681-01SC Fuji Electric Co Ltd Chip1Stop 160 $53.80 $39.00
2SK3682-01 Fuji Electric Co Ltd Allied Electronics & Automation - $3.01 $2.77
2SK3682-01SC Fuji Electric Co Ltd Chip1Stop 65 $14.80 $12.00
2SK3683-01MRSC Fuji Electric Co Ltd Chip1Stop 180 $13.90 $10.50
2SK3685-01 Fuji Electric Co Ltd Allied Electronics & Automation - $2.26 $2.26
2SK3685-01SC Fuji Electric Co Ltd Chip1Stop 95 $19.70 $15.70
2SK3686-01 Fuji Electric Co Ltd Allied Electronics & Automation - $1.84 $1.84
2SK3686-01SC Fuji Electric Co Ltd Chip1Stop 80 $18.10 $14.50
2SK3687-01MRSC Fuji Electric Co Ltd Chip1Stop 110 $14.90 $11.60
2SK3688-01LSC Fuji Electric Co Ltd Chip1Stop 100 $16.50 $12.90
2SK3689-01 Fuji Electric Co Ltd Allied Electronics & Automation - $2.12 $2.12
2SK3689-01SC Fuji Electric Co Ltd Chip1Stop 95 $21.30 $16.80

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2SK368 datasheet (28)

Part Manufacturer Description Type PDF
2SK368 Toshiba N-Channel MOSFET Original PDF
2SK368 Others Scan PDF
2SK368 Others FET Data Book Scan PDF
2SK368 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
2SK368 Toshiba Silicon N channel field effect transistor for audio frequency and high voltage amplifier applications, constant current applications Scan PDF
2SK368 Toshiba Junction FETs / MOSFET / Transistors Scan PDF
2SK3680-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
2SK3680-01 Fuji Electric Power Amplifier, 500V 52A 600W, MOS-FET N-Channel enhanced Original PDF
2SK3681-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
2SK3681-01 Fuji Electric Power Amplifier, 600V 43A 600W, MOS-FET N-Channel enhanced Original PDF
2SK3682-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
2SK3683 Fuji Electric Fuji Power MOSFET SuperFAP-G series Target Specification Original PDF
2SK3683-01MR Fuji Electric Fuji Power MOSFET SuperFAP-G series Target Specification Original PDF
2SK3683-01MR Fuji Electric N-Channel Silicon Power MOSFET Original PDF
2SK3684-01L Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
2SK3684-01S Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
2SK3684-01SJ Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
2SK3685-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
2SK3686-01 Fuji Electric N-Channel Silicon Power MOSFET Original PDF
2SK3687-01MR Fuji Electric N-Channel Silicon Power MOSFET Original PDF

2SK368 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2SK3683

Abstract: 2SK368
Text: 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications · High breakdown voltage: VGDS = -100 V (min) · High input impedance: IGSS = -1.0 nA (max) (VGS = -80 V) · Unit: mm , ~1.4 mA, Y: 1.2~3.0 mA, GR (G): 2.6~6.5 mA Marking 1 2003-03-26 2SK368 2 2003-03-26 2SK368 3 2003-03-26 2SK368 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF 2SK368 O-236MOD 012transportation 2SK3683 2SK368
2007 - 2SK368

Abstract: 2SK3683
Text: 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications · High breakdown voltage: VGDS = -100 V (min) · High input impedance: IGSS = -1.0 nA (max) (VGS = -80 V) · Unit , O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR (G): 2.6~6.5 mA Marking 1 2007-11-01 2SK368 2 2007-11-01 2SK368 3 2007-11-01 2SK368 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL


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PDF 2SK368 2SK368 2SK3683
2007 - Not Available

Abstract: No abstract text available
Text: 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications · · · High breakdown voltage: VGDS = -100 V (min) High input impedance: IGSS = -1.0 nA (max) (VGS = -80 V) Small package Unit: mm , mA Marking 1 2003-03-26 2SK368 2 2003-03-26 2SK368 3 2003-03-26 2SK368 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to change without


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PDF 2SK368 O-236MOD SC-59
2SK368

Abstract: IDSS -6.5mA vgds 100v MARKING 05L S 05L
Text: TOSHIBA 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 8 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS • High Breakdown Voltage : vgds = -100V (Min.) • High Input Impedance : lGSS = -l.OnA (Max.) (VQg=-80V) â , TOSHIBA Semiconductor Reliability Handbook. 1997-04-10 1/3 TOSHIBA 2SK368 id - vds id - vds (low , subject to change without notice. 1997-04-10 2/3 TOSHIBA 2SK368 Ciss - vds igsx - vds


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PDF 2SK368 -100V O-236MOD SC-59 2SK368 IDSS -6.5mA vgds 100v MARKING 05L S 05L
Not Available

Abstract: No abstract text available
Text: T O SH IB A 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK368 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 • • High Input Impedance • h0.25 1.5 -0.15 High Breakdown Voltage : VGDg = —100V (Min.) Small Package : IGSS = —l-0nA(Max.) (VGg = —80V) -e - , O SH IB A 2SK368 id - vds id - vds (l o w v o l t a g e r e g io n


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PDF 2SK368 O-236MOD
2003 - 2SK3683

Abstract: 2SK368
Text: 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications · High breakdown voltage: VGDS = -100 V (min) · High input impedance: IGSS = -1.0 nA (max) (VGS = -80 V) · Unit: mm Small package Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VGDS , 2003-03-26 2SK368 2 2003-03-26 2SK368 3 2003-03-26 2SK368 RESTRICTIONS ON PRODUCT


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PDF 2SK368 O-236MOD 012transportation 2SK3683 2SK368
2SK368

Abstract: No abstract text available
Text: TOSHIBA 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 8 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS • High Breakdown Voltage : VgdS = -100V (Min.) • High Input Impedance : lGSS = ~ 1-OnA (Max.) (VqS= -80V) • Small Package , TOSHIBA Semiconductor Reliability Handbook. 1997-04-10 1/3 TOSHIBA 2SK368 id - vds id - vds (low voltage , information contained herein is subject to change without notice. 1997-04-10 2/3 TOSHIBA 2SK368 Ciss - VdS


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PDF 2SK368 -100V O-236MOD SC-59 25DRAIN
2SK368

Abstract: No abstract text available
Text: TOSHIBA 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 8 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS • High , Classification o : 0.6-1.4mA, Y : 1.2~3.0mA, GR(G) : 2.6~6.5mA 1 2001-05-31 TOSHIBA 2SK368 id - vds id - , ) : VDS=10mV VGS = 0 Ta = 25°C 0.3 1 3 10 DRAIN CURRENT IDss (mA) 2 2001-05-31 TOSHIBA 2SK368 , 120 140 AMBIENT TEMPERATURE Ta (°C) 3 2001-05-31 TOSHIBA 2SK368 RESTRICTIONS ON PRODUCT USE


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PDF 2SK368 -100V to-236mod SC-59 2SK368
2SK368

Abstract: No abstract text available
Text: TOSHIBA 2SK368 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 8 AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS High Breakdown Voltage : VqdS= -100V (Min.) High Input Impedance : l(jgg= - l.OnA (Max.) (VQg= —80V) Small Package , TOSHIBA 2SK368 id - vds id - vds (low voltage region) I I I COMMON SOURCE Ta = 25 , by ICminer.com Electronic-Library Service CopyRight 2003 TOSHIBA 2SK368 Ciss - VdS IGSX - VDS


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PDF 2SK368 -100V O-236MOD SC-59 2SK368
2SK368

Abstract: No abstract text available
Text: 2SK368 CONSTANT CURRENT APPLICATIONS. FEATURES: . High B reakdown Voltage . High Input Impedance : lGSS= "l-0nA . Small Package (Max.) SILICON N CHANNEL JUNCTION TYPE A UDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS. +0 .5 2.5-0.3 + CÌ25 1.5-0.1 5 : V gjjs = - 100V (Min.) Unit in mm a (V g s =-80V) £E+I u 2 . OA.TK 3. sount'F . T0-236M0D CHARACTERISTIC Gate Drain Voltage , o c h < < C O (LOW 1 s l i VOLTAGE REQION) 2SK368 - V DS COMMON SOURCE


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PDF 2SK368 T0-236M0D 5030f 2SK368
2sk405 2sj115

Abstract: 2SK389 2SK400 2SK385 2SK370 2SK381 2SK336 2SK388 2SJ114 2SJ109
Text: - 46 - M « tt S m a f » t » í 1 K S * t ts s. n m m a na^ic) Pd/Pch (W) Igss (max) (A) (V) * (V) » * (A) » ♦ Vgs (V) (min) (A) (max) (A) Vds (V) / ■\ (min) (V) (max) (V) Vds (V) Id (A) (min) (S) Vds (V) Id (A) 2SK368 mz LF HV A, CC N D -100 GDS 10m G 150m -ln -80 0. 6m 6. 5m 10 -0.4 -3. 5 10 0.1« 1. 5m 4. 6» 10 1DSS 2SK369 ms , DSG 2SK368 75 15 0 10 5 10 100 100k 82C DGS 2SK369 30 6 0 10 1 10 10 lk 2SJ108 70B DGS


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PDF 2SK368 2SK369 2SK370 2SK371 2SK372 2SK386 2SK387 2SK388 20mVmax 2SJ109 2sk405 2sj115 2SK389 2SK400 2SK385 2SK370 2SK381 2SK336 2SK388 2SJ114
U8 marking

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR i < ; \c 2SK368 SILICON N CHANNEL JUNCTION TYPE 3 f i f t AUDIO FREQUENCY AND HIGH VOLTAGE AMPLIFIER APPLICATIONS CONSTANT CURRENT APPLICATIONS Unit in mm + 0.5 2.5 - 0.3 · · · High Breakdown Voltage : V q d S " -100V (Min.) High Input Impedance ; lGSS~ -1.0nA(Max.) (Vqq = -80V) Small Package Sym bol Vg d s IG Pd 1J T stg + 0.25 1. 5 - , TOSHIBA 2SK368 Id - V d s I d - V d s (LOW VOLTAGE REGION) DRAIN-SOURCE VOLTAGE V ßg (V) id


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PDF 2SK368 --100V --80V) U8 marking
2Sj148

Abstract: 2sd1408 2SK364 2sc3281 2sc4793 2SK366 2SC3180N
Text: TO-92{Mlni) 2SK330 2SK367 2SK365 2SK366 2SK372 SOT-23MOD 2SK208 2SK368 2SK209 USM 2SK879 - P


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PDF 2SC2705 2SC1627A 2SC2235 2SC2236 2SC3423 2SC3419 2SC3421 2SC3422 2SD880 2SD525 2Sj148 2sd1408 2SK364 2sc3281 2sc4793 2SK366 2SC3180N
2sk170 FET

Abstract: fet to92 Junction-FET 2SK364 2SK118 2sk117 2SJ74 fet data book 2SJ14 2sk879
Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch 2SK367 Nch 2SK208 Nch 2SJ106 Pch 2SK879 Nch 2SJ144 Pch 2SK209 Nch 2SK880 Nch 2SK368 Nch 1 of 1 Polarity -50.0 1.2 50.0 -1.2 -50.0 1.2 -50.0 1.2 -40.0 5.0 -40.0 2.6 -40.0 2.6 Nch -50.0 -40.0


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PDF 2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET fet to92 Junction-FET 2SK118 2SJ74 fet data book 2SJ14 2sk879
Not Available

Abstract: No abstract text available
Text: Current & Analog SW Analog SW & General Purpose 2SK208* 2SK209 2SK368 | | f (MHz) 1 1 1 1 (dB) 5.0


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PDF 1000M 25MIN. 30MIN. 20MIN. 2SC31 2SK302
2010 - 2SJ111

Abstract: 2SJ109BL 2N4882 2SJ109GR 2N3333 2N3112 2N5033 2SJ109V BF320 2SJ111BL
Text: JUNCTION FET Item Number Part Number Manufacturer V(BA)GSS loss g. Min (S) Max (V) (A) VGS(Off) Max (V) IGSS Max (A) Cia Max (F) PD Max (Wl Derate at (WrC) Toper Max eC) Package Style N-Channel JFETs, (Cont'd) · 5 2N5392 2N5393 2N5394 2N5395 2N5396 2N4885 2N4886 2N4886 2N5543 2SK223 2N4881 2N4881 2N4883 2N4883 2SK367 2SK368 2SK373 2N4882 2N4884 IT1750 U1715A 2N5277 2N5278 IFN6450 TP6450 TP6450 See Index See Index See Index See Index See Index See Index Hi·Tron Space Power See


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PDF 2N5392 2N5393 2N5394 2N5395 2N5396 2N4885 2N4886 2N5543 2SK223 2SJ111 2SJ109BL 2N4882 2SJ109GR 2N3333 2N3112 2N5033 2SJ109V BF320 2SJ111BL
2SK241 Equivalent FET

Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent gaas fet vhf uhf 2SK161 equivalent
Text: Super-Mini FET (SOT-23MOD, SOT-143MOD) Electrical Characteristics (Ta=25"C) Type No. 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 ·2SK1771 2SK1826 2SK182S 2SK2033 2SK2036 2SK2009 2SK711 2SJ106 2SJ168 2SJ343 2SJ345 2SJ305 ·3SK126 ·3SK127 '3SK 14 6 `3SK151 ·3SK153 ·3SK160 ·3SK195 ·3SK199 *3SK207 ·3SK225 ·3SK226 ·3SK232 *3SK240 ·3SK250 Application Low-frequency amplification Low-frequency amplification FM RF amplification FM R F amplification VHF band amplification Constant current circuit High-speed switching FM RF


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PDF OT-23MOD, OT-143MOD) 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 2SK1771 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent gaas fet vhf uhf 2SK161 equivalent
2sk4005

Abstract: 2SK385 2SK332 2SK336 2SK400 2SK309 2SK386 2SK339 2SK354 2SK308 2Sk310 2SK311 2SK312
Text: 2SK356 2SK357 2SK358 2SK359 2SK360 2SK362 2SK363 2SK364 2SK365 2SK366 2SK367 2SK368 2SK369


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PDF 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2sk4005 2SK385 2SK332 2SK336 2SK400 2SK309 2SK386 2SK339 2SK354 2SK308 2Sk310 2SK311 2SK312
2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
Text: * 2SK246 * 2SK266 2SK302 * 2SK330 * 2SK362 * 2SK363 * 2SK364 * 2SK365 * 2SK366 * 2SK367 2SK368 * 2SK369


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PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
2sc 1203

Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC1815O 2SC1815 NPN SOT-23 2SC 1207
Text: Conversion > N Channel TO-92 P Channel USM TO-92 + MINI S-MINI % % 2SK208 2SK368 2SK209 - -


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PDF 1815L 2SC2240 2SC1627 2SC752G SC-70) SC-59) 2SC2713 2SC4210 2SA1621 2SC4209 2sc 1203 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC1815O 2SC1815 NPN SOT-23 2SC 1207
2003 - TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Text: 2SC3326 209 2SK368 346 HN1C07F 491 HN7G01FE 633 2SC3437 213 2SK879 350 , 10 0 X General-Purpose AM Amp and Switch 2SK368 (-100) 10 150 0.6 ~ 6.5


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PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
2002 - TC7SZ08FU

Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU te85l F SOT-24 TC7W04F 2sc2240 equivalent
Text: 2SK208 2SK879 Pch 2SJ106 2SJ144 Nch 2SK209 2SK880 2SK2145 2SK3320 Nch 2SK368 VDS VGS


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PDF 3407C-0209 TC7SZ08FU lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU te85l F SOT-24 TC7W04F 2sc2240 equivalent
5252 0.9V 1.5V led driver

Abstract: 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators TAH8N401K e 420 dual jfet tc7wh125 5252 solar cell chip 2SK3376TT
Text: 2SK209 2SK880 2SK2145 2SK3320 -50 10 100 1.2 to 14 10 0 15 (Typ.) 10 2SK368 -100 10 100 0.6 to 6.5 10 0


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PDF BCE0030A 5252 0.9V 1.5V led driver 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators TAH8N401K e 420 dual jfet tc7wh125 5252 solar cell chip 2SK3376TT
TA8172AF

Abstract: TB 1226 BN mg75n2ys40 TA8859P t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: 2SK362 2SK363 2SK364 2SK365 2SK366 2SK367 2SK368 2SK369 2SK372 2SK373 2SK385 2SK386 2SK387 2SK388 2SK389


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PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN mg75n2ys40 TA8859P t6961A TA8242AK ta8644n 7378P ta8310 7628P
Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 D1N750 Q2N1132 D02CZ10 D1N751
Text: No file text available


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PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 D1N750 Q2N1132 D02CZ10 D1N751
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