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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2SK363-GR(F) Toshiba America Electronic Components Chip1Stop 1,100 $2.78 $2.17
2SK3633(F) Toshiba America Electronic Components Chip1Stop 180 $9.11 $6.94
2SK3634-AZ Renesas Electronics Corporation Chip1Stop 2,530 $3.75 $3.03
2SK3634-Z-AZ NEC Electronics Group Rochester Electronics 8,639 $0.92 $0.75
2SK3634-Z-AZ Renesas Electronics Corporation Chip1Stop 650 $5.81 $4.32
2SK3634-Z-E1-AZ Renesas Electronics Corporation Rochester Electronics 2,000 $1.14 $0.93
2SK3635-AZ Renesas Electronics Corporation Rochester Electronics 1,860 $1.41 $1.15
2SK3635-Z-AZ Renesas Electronics Corporation Rochester Electronics 1,293 $1.48 $1.21
2SK3635-Z-E1-AZ Renesas Electronics Corporation Rochester Electronics 8,000 $1.48 $1.21

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2SK363 datasheet (36)

Part Manufacturer Description Type PDF
2SK363 InterFET N-Channel silicon junction field-effect transistor Original PDF
2SK363 Toshiba Field Effect Transistor Silicon N Channel Junction Type Original PDF
2SK363 Others FET Data Book Scan PDF
2SK363 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
2SK363 Toshiba Silicon N channel field effect transistor for audio amplifier, analog switch, constant current and impedance converter applications Scan PDF
2SK363 Toshiba Junction FETs Scan PDF
2SK3633 Toshiba FETs - Nch 700V<VDSS; Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; R DS On (max 1.7); P D (W): (max 7) Original PDF
2SK3633 Toshiba Field Effect Transistor Silicon N Channel MOS Type Original PDF
2SK3633 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SK3634 Kexin N-Channel MOSFET Original PDF
2SK3634 NEC N-ch power MOS FET (switching element) Original PDF
2SK3634 NEC Switching N-Channel Power MOS FET Original PDF
2SK3634-Z NEC SWITCHING N-CHANNEL POWER MOSFET Original PDF
2SK3634-Z NEC Switching N-Channel Power MOS FET Original PDF
2SK3635 Kexin N-Channel MOSFET Original PDF
2SK3635 NEC N-ch power MOS FET (switching element) Original PDF
2SK3635-Z NEC SWITCHING N-CHANNEL POWER MOSFET Original PDF
2SK3636 Kexin N-Channel Power MOSFET Original PDF
2SK3636 Panasonic TRANS MOSFET N-CH 800V 3A 3TO-220D-A1 Original PDF
2SK3636 TY Semiconductor N-Channel Power MOSFET - TO-263 Original PDF

2SK363 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - 2SK363

Abstract:
Text: 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · Unit: mm High breakdown voltage: VGDS = -40 V · High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) · Low RDS (ON): RDS (ON) = 20 (typ.) (IDSS = 15 mA) Maximum Ratings (Ta = 25°C) Characteristics , 2SK363 2 2003-03-25 2SK363 3 2003-03-25 2SK363 4 2003-03-25 2SK363


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PDF 2SK363 2SK363 2SK363 transistor
2009 - Not Available

Abstract:
Text: 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · High breakdown voltage: VGDS = -40 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low RDS (ON): RDS (ON) = 20 , , V: 14.0~30.0 mA Note 2: Condition of the typical value IDSS = 15 mA 1 2007-11-01 2SK363 2 2007-11-01 2SK363 3 2007-11-01 2SK363 4 2007-11-01 2SK363 RESTRICTIONS


Original
PDF 2SK363
TOSHIBA 2SK363

Abstract:
Text: TOSHIBA 2SK363 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 3 , 2001-05-31 TOSHIBA 2SK363 id - vds id - vds (low voltage region) 12 COMMON SOURCE Ta = 25 , °C 2 2001-05-31 TOSHIBA 2SK363 500 300 100 50 30 Ciss - VDS Crss - vgd COMMON , / 0 4 8 12 16 20 24 28 DRAIN-SOURCE VOLTAGE VDS (V) 3 2001-05-31 TOSHIBA 2SK363 500 400 300 PD , \ \ \ \ \ \ \ \ 25 50 75 100 125 AMBIENT TEMPERATURE Ta (°C) 150 4 2001-05-31 TOSHIBA 2SK363 RESTRICTIONS ON


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PDF 2SK363 SC-43 TOSHIBA 2SK363 2SK363
2SK363 transistor

Abstract:
Text: 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · Unit: mm High breakdown voltage: VGDS = -40 V · High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) · Low , Note 2: Condition of the typical value IDSS = 15 mA 1 2003-03-25 2SK363 2 2003-03-25 2SK363 3 2003-03-25 2SK363 4 2003-03-25 2SK363 RESTRICTIONS ON PRODUCT USE


Original
PDF 2SK363 2SK363 transistor TOSHIBA 2SK363 2SK363
2007 - 2SK363

Abstract:
Text: 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · Unit: mm High breakdown voltage: VGDS = -40 V · High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) · Low , 1 2007-11-01 2SK363 2 2007-11-01 2SK363 3 2007-11-01 2SK363 4 2007-11-01 2SK363 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained


Original
PDF 2SK363 2SK363 2SK363 transistor
2007 - Not Available

Abstract:
Text: 2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · High breakdown voltage: VGDS = -40 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low RDS (ON): RDS (ON) = 20 (typ.) (IDSS = 15 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate , 2SK363 2 2003-03-25 2SK363 3 2003-03-25 2SK363 4 2003-03-25 2SK363


Original
PDF 2SK363 SC-43
Not Available

Abstract:
Text: T O SH IB A 2SK363 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK363 Unit in mm FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER , O SH IB A 2SK363 id - id v d s < s (l o w v o l t a g e r e g io n , ) DRAIN-SOURCE VOLTAGE o < a o 2SK363 (JÜ Crss U’F) VßS (V) i O REVERSE TRANSFER CAPACITANCE T O SH IB A 2SK363 R d s (ON) - Ta IGSS - Ta w o 2¡


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PDF 2SK363 SC-43
2SK363

Abstract:
Text: TOSHIBA 2SK363 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 3 FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • High Breakdown , Reliability Handbook. 1997-04-10 1/4 TOSHIBA 2SK363 id - vds id - vds (low voltage region) 12 COMMON SOURCE Ta , The information contained herein is subject to change without notice. 1997-04-10 2/4 TOSHIBA 2SK363 , 4 8 12 16 20 24 28 DRAIN-SOURCE VOLTAGE VßS (V) 1997-04-10 3/4 TOSHIBA 2SK363 PD - Ta


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PDF 2SK363 SC-43
2SK363

Abstract:
Text: TOSHIBA 2SK363 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 3 FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS • High , 2SK363 id - VDS id - Vds (low voltage region) 12 COMMON SOURCE Ta = 25°C Vna- OV , The information contained herein is subject to change without notice. 1997-04-10 2/4 TOSHIBA 2SK363 , 0 4 8 12 16 20 24 28 DRAIN-SOURCE VOLTAGE VDS (V) 1997-04-10 3/4 TOSHIBA 2SK363 500 400 300


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PDF 2SK363 SC-43 2SK363
transistor gds

Abstract:
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK363 i IMPEDANCE CONVERTER APPLICATIONS <; \c 3 ft 3 U nit in mm 5.1 MAX. FOR AUDIO AM PLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND · · High Breakdown Voltage TTicrVi Tnm it Tmr>prl»nr»p - - r ' : Vq d S = , TOSHIBA 2SK363 ID - V d S ID - V d S (LOW VOLTAGE REGION) DRAIN-SOURCE VOLTAGE V , 2SK363 R d s (ON) - Ta C d o £ IGSS - Ta < H U) k ctí S Z £ ° o o u> z < C Ö


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PDF 2SK363 transistor gds
Not Available

Abstract:
Text: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit -5 0 -2 0 -4 0 25 V M in 1.0 { - 20 V) 0.1 ( - 1 0 V) 1.0 (—30 V) 1.0 (10V) nA Max - 0 .5 /- 2.0 (10V) - 0 .3 /-1 .2 (10 V) - 0 . 2


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PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L
IFN152

Abstract:
Text: 9-97 t ó SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N Channel N Channel N Channel P Channel Unit Limit Parameters -50 -20 -40 25 V Min BVqss 1.0 (- 20 V) 0.1 (— 10 V) 1.0 (- 30 V) 1.0 (10V) nA Max Igss -0.3/-10 (20 V) - 0.5/- 2.0 (10V) -0.3/-1.2 (10 V) -0.2/- 1.5 e iov) V Min/Max V gs (Off) 5.0/150 (20 V) 5.0/20 (10V) 5.0/30 (10V) 1.0/18 (-10 V) mA Min/Max Idss 20 (20 V) 30 (10V) 60 (10V) 9


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PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450
2SJ99

Abstract:
Text: . 1« 5m 19» 10 IDSS 2SK363 3S2 LF A. A-S» » D -40 GDS 10» G 400» -ln -30 5» 30» 10 -0.3 , 10 20typ 0 15m 82C DGS 2SK363 30 6 0 10 50typ 0 5m 2SJ104 82C DGS 2SK364 13 3 0 10


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PDF 2SK331 2SK332 2SK333 2SK334 2SK336 2SK337 2SK354 8/12GHz 2SK354A 2SK355 2SJ99 2SK354 2SK356 2sk3542 2SK347 2SK353 2SK354A 2SK345
2sk152 equivalent

Abstract:
Text: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese InterFET Process Unit Limit V M in nA M ax V M in /M a x mA M in /M a x mS T yp pF T yp pF T yp IFN113 IFN152 IFN363 IFP44 PJ99 NJ132 NJ132L NJ450 N Channel -5 0 1.0 ( - 20 V) -0 .3 /-1 0 (20 V) 5.0/150 (20 V) 20 (20 V) 10 (0) (20 V) 3.0 (0) (15 V) T O - 18 SDG N Channel -2 0 0.1 (-10 V) -0 .5 /-2 .0 (10V) 5.0/20 (10V) 30 (10V) 15 (0


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PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent 2SJ44 2SK113 2SK152
2001 - 2sk152 equivalent

Abstract:
Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit Parameters ­ 50 ­ 20 ­ 40 25 V Min BVGSS 1.0 (­ 20 V) 0.1 (­10 V) 1.0 (­ 30 V) 1.0 (10 V) nA Max IGSS ­ 0.3/­10 (20 V) ­


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PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent IFN152 INTERFET 2SK152 2SJ44 IFP44 10 V 2SK113 IFN113 IFN363
2SJ111

Abstract:
Text: 10 300 1.2-14 10 0 19 10 0 3 -10 1 - - - - - 2SK363 -40 10 400 5-30 10 0 60 10 0 15 -10 1 - -


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PDF 2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK363 2SK364 10rrent 2SK373 2SJ74 2SJ111 2SJ110 2sj111 fet 2SK373 2SK30ATM 2SK246 2sk170 FET 2SK170 2SK117
1999 - 2SK105 DGS

Abstract:
Text: Channel 2SK363 IFN363 NJ450 N Channel 2SJ44 IFP44 PJ99 P Channel Japanese InterFET Process


Original
PDF 2SK17 IFN17 2SK40 IFN40 2SK59 IFN59 2SK105 IFN105 O-226AA 2SK105 DGS 2sj44 V6010
2SC3180N

Abstract:
Text: ) 0= 0 utpu t Analog Switch/Current Regulator N Channel TO-92 2SK246 2SK373 2SK362 2SK364 2SK363


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PDF 2SC2705 2SC1627A 2SC2235 2SC2236 2SC3423 2SC3419 2SC3421 2SC3422 2SD880 2SD525 2SC3180N 2sc3281 2sc4793 2sd1408 2Sj148 2SK364 2SK366
2sj111

Abstract:
Text: *— 8 . , N-Channel ! S 1 to * 8 2SK117 ! o i*. T— XL 8 _i 2SK246 ! 2SK362 ; 2SK363 ; (O n


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PDF 2SK117 2SK246 2SK362 2SK363 2SK369 2sj111 2sj110 2sj111 fet 2SK117 2SK363 2SK362 2SK246 2sk170 FET TOSHIBA 2SK369
1999 - NJ450

Abstract:
Text: Databook.fxp 1/13/99 2:09 PM Page F-36 F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts G 10 mA +150°C ­ 65°C to +175°C Devices in this Databook based on the NJ450 Process. S-D Datasheet G 2SK363 IFN146, IFN147 IFN363 J108, J109 J110, J110A Die Size = 0.028" X 0.028" All


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PDF NJ450 2SK363 IFN146, IFN147 IFN363 J110A D45 TRANSISTOR IFN363 IFN146 IFN147 f36 transistor J108 J109 J110 J110A
2sk170 FET

Abstract:
Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch 2SK367 Nch 2SK208 Nch 2SJ106 Pch 2SK879 Nch 2SJ144 Pch 2SK209 Nch 2SK880 Nch 2SK368 Nch 1 of 1 Polarity -50.0 1.2 50.0 -1.2 -50.0 1.2 -50.0 1.2 -40.0 5.0 -40.0 2.6 -40.0 2.6 Nch -50.0 -40.0


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PDF 2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET fet to92 Junction-FET 2SK118 2SJ74 2SJ106
2sj111 fet

Abstract:
Text: 2SK246 2SK362 2SK363 2SK364 2SK369 2SK373 2SJ74 2SJ103 2SJ104 2SJ110 2SJ111 P-Channel V GDS (V) -5 0 -5 0


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PDF 2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK363 2SK364 2SK369 2SK373 2SJ74 2sj111 fet 2SJ111 2SK30A 2SJ110
1999 - 2SK146

Abstract:
Text: Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44


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PDF 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2sk152 equivalent 2SK147 Japanese Transistor
2SK146

Abstract:
Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit Parameters ­ 50 ­ 20 ­ 40 25 V Min BVGSS 1.0 (­ 20 V) 0.1 (­10 V) 1.0 (­ 30 V) 1.0 (10 V) nA Max IGSS ­ 0.3/­10 (20 V) ­


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PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2SK146 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 equivalent transistor TO 2sk146 2SK152
2010 - npd5564

Abstract:
Text: NPD5566 2N5564 2N5565 2SK371 2SK363 2SK372 2SK146 2SK147 2SK147V 2SK162 2SK162 BSR56 BSV78 BSV78 BSV78


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PDF 2SK364 2SK366 2SK240 2SK431 2SK170 UC704 2SK194 ITE4091 ITE4091A npd5564 2N4393 MOTOROLA KE4393 2sk162 2SK146 2sk162 hitachi 2SK147 FET package TO-71 hitachi 2sk170
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