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LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85
LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85

2SK3569 equivalent Datasheets Context Search

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2003 - k3569

Abstract: 2SK3569 2-10U1B K3569 DATASHEET K3569 equivalent compatible k3569 2SK3569+equivalent
Text: 2SK3569 NMOS (-MOSVI) 2SK3569 : mm : RDS (ON) = 0.54 () : |Yfs| = 8.5 S , 2SK3569 (Ta = 25 , (RoHS) 2003 1 27 (EU 2002/95/EC) 2 2010-01-29 2SK3569 ID ­ VDS ID ­ VDS 5.3 , 100 (A) VGS = 10 V15V 1 3 10 ID 100 (A) 2010-01-29 2SK3569 RDS , 2SK3569 rth ­ tw () rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 PDM


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PDF 2SK3569 SC-67 2-10U1B k3569 2SK3569 2-10U1B K3569 DATASHEET K3569 equivalent compatible k3569 2SK3569+equivalent
2003 - k3569

Abstract: 2SK3569 K3569 DATASHEET K3569 equivalent
Text: 2SK3569 NMOS (-MOSVI) 2SK3569 : mm : RDS (ON) = 0.54 () : |Yfs| = 8.5 S , 2SK3569 (Ta = 25 , RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC) 2 2009-09-29 2SK3569 ID ­ VDS , 2SK3569 RDS (ON) ­ Tc IDR ­ VDS 2.5 100 Tc = 25°C (A) 2.0 VGS = 10 V IDR , ) 2009-09-29 2SK3569 rth ­ tw () rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05


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PDF 2SK3569 SC-67 2-10U1B k3569 2SK3569 K3569 DATASHEET K3569 equivalent
K3569

Abstract: transistor k3569 K3569 data 2SK3569 k3569 transistor 2SK3569 application transistor 2SK3569 k3569 Silicon N Channel MOS Type k356 toshiba k3569
Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching , transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-08 2SK3569 , finish. 2 2006-11-08 2SK3569 ID ­ VDS ID ­ VDS 5.3 6 5 10,8 4.8 6 4.6 4 , 10 DRAIN CURRENT ID 3 100 (A) 2006-11-08 2SK3569 RDS (ON) ­ Tc IDR ­ VDS , ) ( ) 2.5 (nC) 2006-11-08 2SK3569 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c


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PDF 2SK3569 K3569 transistor k3569 K3569 data 2SK3569 k3569 transistor 2SK3569 application transistor 2SK3569 k3569 Silicon N Channel MOS Type k356 toshiba k3569
2006 - k3569

Abstract: 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application
Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching , 2SK3569 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source , 2SK3569 ID ­ VDS 10 COMMON SOURCE Tc = 25°C PULSE TEST 10,8 6 4.6 4 4.4 2 4.2 5 4.8 6 5.3 20 10 5.1 , ID (A) DRAIN CURRENT ID (A) 3 2006-11-08 2SK3569 RDS (ON) ­ Tc 2.5 100 IDR , TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC) 4 2006-11-08 2SK3569 rth ­ tw


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PDF 2SK3569 k3569 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application
2005 - K3569

Abstract: K3569 equivalent K3569 DATASHEET transistor k3569 2SK3569 equivalent 2SK3569 k3569 transistor transistor 2SK3569 k3569 Silicon N Channel MOS Type toshiba k3569
Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching , 2SK3569 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , 2005-01-24 2SK3569 ID ­ VDS ID ­ VDS 8 COMMON SOURCE 20 5.3 6 5.1 5 10,8 , DRAIN CURRENT ID 3 100 (A) 2005-01-24 2SK3569 RDS (ON) ­ Tc IDR ­ VDS 100 , (nC) 2005-01-24 2SK3569 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth ­


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PDF 2SK3569 K3569 K3569 equivalent K3569 DATASHEET transistor k3569 2SK3569 equivalent 2SK3569 k3569 transistor transistor 2SK3569 k3569 Silicon N Channel MOS Type toshiba k3569
2004 - k3569

Abstract: No abstract text available
Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 , handle with caution. 3 1 2004-07-01 2SK3569 Electrical Characteristics (Ta = 25 , lead (Pb)-free finish. 2 2004-07-01 2SK3569 ID – VDS ID – VDS 8 COMMON SOURCE , (A) 2004-07-01 2SK3569 RDS (ON) – Tc IDR – VDS 100 COMMON SOURCE DRAIN REVERSE , 2SK3569 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty


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PDF 2SK3569 k3569
2004 - transistor k3569

Abstract: K3569 2SK3569 k3569 Silicon N Channel MOS Type k3569 transistor transistor 2SK3569 K356
Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching , 2004-03-04 2SK3569 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , TYPE Lot Number 2 2004-03-04 2SK3569 ID ­ VDS ID ­ VDS 5.3 6 ID DRAIN , ) 2004-03-04 2SK3569 RDS (ON) ­ Tc IDR ­ VDS 100 PULSE TEST 2.0 ID = 12A 1.5 6 1.0 3 VGS , DRAIN-SOURCE ON RESISTANCE RDS (ON) ( ) 2.5 (nC) 2004-03-04 2SK3569 NORMALIZED TRANSIENT


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PDF 2SK3569 transistor k3569 K3569 2SK3569 k3569 Silicon N Channel MOS Type k3569 transistor transistor 2SK3569 K356
2009 - transistor compatible k3569

Abstract: K3569 transistor k3569 2SK3569 equivalent transistor compatible 2SK3569 2SK3569 K3569 equivalent K3569 data K3569 DATASHEET 2SK3569 application
Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching , transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SK3569 , hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK3569 ID ­ VDS , ) 2009-09-29 2SK3569 RDS (ON) ­ Tc IDR ­ VDS 100 COMMON SOURCE DRAIN REVERSE CURRENT IDR (A , ON RESISTANCE RDS (ON) ( ) 2.5 (nC) 2009-09-29 2SK3569 NORMALIZED TRANSIENT THERMAL


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PDF 2SK3569 transistor compatible k3569 K3569 transistor k3569 2SK3569 equivalent transistor compatible 2SK3569 2SK3569 K3569 equivalent K3569 data K3569 DATASHEET 2SK3569 application
2010 - 2sk3569

Abstract: transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data k3569 Silicon N Channel MOS Type 2SK3569 application
Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching , 2SK3569 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , electronic equipment. 2 2010-01-29 2SK3569 ID ­ VDS ID ­ VDS 5.3 6 5 DRAIN CURRENT , = 10 V15V 1 10 DRAIN CURRENT ID 3 100 (A) 2010-01-29 2SK3569 RDS (ON) ­ , ) ( ) 2.5 (nC) 2010-01-29 2SK3569 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c


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PDF 2SK3569 2sk3569 transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data k3569 Silicon N Channel MOS Type 2SK3569 application
2sk3569

Abstract: 2SK3569 equivalent transistor 2SK3569 lw015f84
Text: TENTATIVE 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) 2SK3569 unit Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k) VDGR 600 V Gate-source voltage , device. Please handle with caution. 3 1 2003-04-08 TENTATIVE 2SK3569 Electrical , recovery charge Qrr dIDR/dt = 100 A/µs 1.63 µC 2 2003-04-08 2SK3569


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PDF 2SK3569 2sk3569 2SK3569 equivalent transistor 2SK3569 lw015f84
2012 - YAGEO DATE CODE

Abstract: CC0805KRX7R9BB104 UM10440
Text: Lamp2 Q2 2SK3569 GLHB 1 X3 150 nF C12 T5A 127 uH 2 R13 140 kΩ WB2 R24 , 1 Q3 2SK3569 GHHB 4 3 T4B C9 220 nF 3 T6B 2 3 2.2 nF WB1 4 uH 1 , 2SK3767 2SK3767(Q) Toshiba Q2 2SK3569 2SK3569 Toshiba Q3 2SK3569 2SK3569


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PDF UM10440 UBA2015AT UBA2015AT, YAGEO DATE CODE CC0805KRX7R9BB104 UM10440
2010 - 2SK3569 equivalent

Abstract: UBA2021P MKP x2 SH 275 RC12H transistor x112 UM10412 E30-15 TPX-54 transistor 2SK3569 2SK3569 application
Text: 2SK3569 G 1 2 R2 0 1 X115 header 2 socket 13 1 2 47 k 2 2 Y5 , insertion of daughterboard 1 Cdc X114 header 2 S socket 3 43 k 1 V3 2SK3569 G , placed in X2 and X14. The supplied NMOST's are Toshiba 2SK3569 (VDS = 600 V; ID = 10 A; RDSon = 0.54 ). , 1.2 kV ±3% 6.1.3 Dimensions · Core: RM-8 (Ferroxcube RM/I or equivalent ) · Core material: 3F3, N87 or equivalent · Bobbin: RM-8 (12 pin, vertical type) UM10412 User manual All


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PDF UM10412 UBA2021 UBA2021, 2SK3569 equivalent UBA2021P MKP x2 SH 275 RC12H transistor x112 UM10412 E30-15 TPX-54 transistor 2SK3569 2SK3569 application
2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: Package Test Conditions -MOSVI -MOSVII 2SK3569 TK10A60D 600 V/10 A 600 V/10 A TO-220SIS TO , : TK10A60D : VGS = ± 30 V, 2SK3569 : VGS = ± 25 V Efficiency Test Circuit 120W (20V/6A) Flyback , 86% 84% RG=47 RG=47 82% 80% 2SK3569 vs TK10A60D 2SK3569 TK10A60D 78% 76% 0 , Ratings R DS(ON) () Existing Equivalent Part Number Package Part Number TK5A50D TK7A50D , -220SIS TK10A60D Existing Equivalent Part Number Package VGS = 10 V TK4A60D TK12A50D ID (A


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PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
transistor compatible 2SK3569

Abstract: TK12A65D tk6a65d equivalent 2SK3569 equivalent TPCA8023-H TPCA8019-H TB-7005 p 181 Photocoupler TPCA8030-H tk10a60d equivalent
Text: to assure stability. *ESR: equivalent series resistance for a capacitor Lower dropout voltage , Equivalent Series Resistance, ESR () 5.0-V Output Stable ESR Regions @VIN = 6.0 V, CNOISE = 0.01 F, CIN = 1 F, COUT = 1 F to 10 F, Ta = 25°C 100 Equivalent Series Resistance, ESR () 1.5-V Output , -V Output @VIN = 3.6 V, CNOISE = 0.01 F, CIN = 1 F, COUT = 1 F to 10 F, Ta = 25°C Equivalent Series Resistance, ESR () Equivalent Series Resistance, ESR () Stable ESR Region for 5.0-V Output @VIN = 6.0


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PDF TLP285/TLP781) TB6818FG/TB6819FG) SCE0024B SCE0024C transistor compatible 2SK3569 TK12A65D tk6a65d equivalent 2SK3569 equivalent TPCA8023-H TPCA8019-H TB-7005 p 181 Photocoupler TPCA8030-H tk10a60d equivalent
TK10A60D

Abstract: 4614 mosfet TB6817WBG TK15A50D 2sk3911 TB-7005 TPC8A03 TCV7102F TPCA8030-H CMS19
Text: TK10A60D 2SK3569 600 V/10 A 600 V/10 A -MOSVI TO-220SIS TO , - - ­1.7 V TK10A60D : VGS = ± 30 V, 2SK3569 : VGS = ± 25 V 120 W(20 V/6 A , =4.7 Efficiency 86% VOUT PFC + ­ VIN + ­ MAIN 84% RG=47 RG=47 82% 80% 2SK3569 vs TK10A60D 2SK3569 TK10A60D 78% 76% 0 20 60 80 Pout (W) 40 100 120 , -220SIS TO-220SIS TK10A60D 10 1 0.75 2SK3667 2SK3569 TO-220SIS TK11A60D 11 0.65


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PDF TLP285/TLP781 TB6818FG/TB6819FG) TK60A08J1 TK15A50D TK13A60D TLP181/TLP283/TLP285/TLP781 TLP781 DL2CZ47A 10FL2CZ47A 10GL2CZ47A TK10A60D 4614 mosfet TB6817WBG TK15A50D 2sk3911 TB-7005 TPC8A03 TCV7102F TPCA8030-H CMS19
2010 - 2SK3569 equivalent

Abstract: Y2W zener zener diode y2w Y2w TRANSISTOR TRAFO CT 350 mA TPX-54 transistor x112 Y2P TRANSISTOR 2SK3569 application capacitor MKP X2 SH
Text: 1 1 V6 2SK3569 G 3 1 2 47 k 2 1 X115 header 2 PCS_2021 13 1 , insertion of daughter board 1 Cdc X114 header 2 S socket 3 43 k 1 V3 2SK3569 G , 2SK3569 (VDS = 600 V; ID = 10 A; RDSon = 0.54 ). When using different NMOS types, the values of gate , HV 1.2 kV 6.1.3 Core and bobbin T1 · Core: RM-8 (Ferroxcube RM/I or equivalent ) · Core material: 3F3, N87 or equivalent · Bobbin: RM-8 (12 pin, vertical type) UM10395 User manual All


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PDF UM10395 UBA2014 UBA2014, UBA2014 2SK3569 equivalent Y2W zener zener diode y2w Y2w TRANSISTOR TRAFO CT 350 mA TPX-54 transistor x112 Y2P TRANSISTOR 2SK3569 application capacitor MKP X2 SH
tk20e60u

Abstract: TPCA*8030 TK13A65D 5252 F solar tcv7104 4614 inverter driver 4614 mosfet TB6830WBG TC7750FTG 5252 solar cell chip
Text: , current, temperature and capacitor type. Perform experiments to assure stability. *ESR: equivalent , Output Current, IOUT (mA) 80 100 Equivalent Series Resistance, ESR () Equivalent Series


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PDF SCE0024C tk20e60u TPCA*8030 TK13A65D 5252 F solar tcv7104 4614 inverter driver 4614 mosfet TB6830WBG TC7750FTG 5252 solar cell chip
2SK3562 equivalent

Abstract: 2SK3561 2SK3759 2SK3566 to220sis 2SK3561 equivalent 2SK3568 equivalent 2SK3757 2SK3566 equivalent 2SK3563
Text: 2SK3767 2SK3567 2SK3562 2SK3667 2SK3569 500 500 600 600 600 600 600 8 12 2 3.5 6 7.5


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PDF DP0540007 O-220SIS O-220NIS. O-220NIS O-220SIS 2SK3562 equivalent 2SK3561 2SK3759 2SK3566 to220sis 2SK3561 equivalent 2SK3568 equivalent 2SK3757 2SK3566 equivalent 2SK3563
2003 - Power MOSFET, toshiba

Abstract: 2sk3561 4502 mosfet HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK3742 2SK2842 design new high speed mosfet 2SK3567 equivalent
Text: Up Conventional Part Number 2SK3563 2SK3561 2SK3568 2SK3567 2SK3562 2SK3667 2SK3569 2SK3566


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PDF VDSS100V) DP0530019 O-220SIS Power MOSFET, toshiba 2sk3561 4502 mosfet HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK3742 2SK2842 design new high speed mosfet 2SK3567 equivalent
2010 - JPP-95

Abstract: t3.15A/250V TEA1733 optocoupler 356T smd diode MARKING U3 SOD123 2KBP206G NCC KY NCC kmg smd diode GW t3.15A/250V fuse
Text: 330 0.22 F VCC C7 0.1 F 50 V Q1 2SK3569 10 DRIVER F R12 R21 n.a , 10 A; 600 V (0.75 ) MOSFET, 2SK3569 /Toshiba, 15p-typical TO-220F U1 TEA1733(L)T , secondary side all shorted 6.4 Core and bobbin Core: RM-10 (A-Core, JPP-95 or equivalent ) Bobbin: RM


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PDF UM10385 TEA1733 JPP-95 t3.15A/250V optocoupler 356T smd diode MARKING U3 SOD123 2KBP206G NCC KY NCC kmg smd diode GW t3.15A/250V fuse
2010 - Not Available

Abstract: No abstract text available
Text: 0.1 μF 2 1 R20 330 Ω ISENSE Q1 2SK3569 R15 GND VCC C7 0.1 μF 50 V R14 , (0.75 Ω) MOSFET; 2SK3569 /Toshiba; 15p-typical TO-220F U1 TEA1733LT/T GreenChip SMPS , : RM-12 (A-Core, JPP-95 or equivalent ). Bobbin: RM-12 (TBI, RM10-18-6P-TH-12, 6-pin, vertical type).


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PDF UM10421 TEA1733LT/T TEA1733LT/T, AN10868
2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: ) 2SK3569 (0.75) 2SK4015 (0.86) 2SK2601 (1.0) TSSOP-8 TO-3P(L) SOP-8 TO-3P(W) 2SK3265 (1.0 , 2SK3907 2SK3562 2SK3569 2SK3797 2SK3911 Characteristics of MACHII Series Characteristics of , ) A 17% reduction in the Qg characteristic compared with equivalent existing products through an optimized chip design A switching characteristic (toff) 15% faster than that of equivalent existing , (VDSS = 800 V to 900 V) A 37% reduction in the Qg characteristic compared with equivalent existing


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PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Text: ) 2SK3438(1.0) 2SK3437(1.0) 2SK4112(1.0) 2SK3399(0.75) 2SK4111(0.75) 2SK3569 (0.75) 2SK4015(0.86 , 5 6 6 3 5 5 11.5 10 Qg Typ. (nC) 23 23 34 34 25 28 35 60 60 Equivalent , Typ. (ns) Equivalent Existing Part Number 10 10 10 10 10 10 10 10 10 10 10 10 , 2SK3562 2SK3569 2SK3797 2SK3911 Characteristics of MACHII Series Characteristics of High-Speed , 200 ns/div Qg40% reduction Equivalent Existing product 2SK2842 ( Equivalent Existing product


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PDF BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
TPCA*8064

Abstract: TPCA8077 TK12A10K3 SSM3J328 2SK3567 equivalent TK50E06K3A TJ11A10M3 TPCA8077-H TPCA*8077 TPCA8028
Text: Advance package allows the maximum permissible power dissipation equivalent to SOP-8, but occupies 64 , " packages, Toshiba has developed "TSON Advance" package which keep equivalent power dissipation while


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PDF BCE0082B TPCA*8064 TPCA8077 TK12A10K3 SSM3J328 2SK3567 equivalent TK50E06K3A TJ11A10M3 TPCA8077-H TPCA*8077 TPCA8028
tpc8118 equivalent replacement

Abstract: SSM3J307T Zener diode smd 071 A01
Text: dissipation equivalent to SOP-8, but occupies 64% less board space. VS-8 PS-8 Chip LGA STP2


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PDF BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01
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