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2SK3561
2SK3561 ECAD Model
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Toshiba America Electronic Components
2SK3561Q Transistor
2SK3561Q ECAD Model
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2SK3561 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
2SK3561 2SK3561 ECAD Model Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SK3561 2SK3561 ECAD Model Toshiba Switching Regulator Applications Original PDF
2SK356/1 2SK356/1 ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF

2SK3561 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - K3561

Abstract: transistor k3561 2SK3561 2SK3561 equivalent k3561 Silicon N Channel MOS Type k3561 transistor 2sk3561 datasheet
Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3561 Switching , 2004-05-11 2SK3561 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , era) 2 2004-05-11 2SK3561 ID ­ VDS ID ­ VDS 8 20 COMMON SOURCE 1015 Tc , 3 10 (A) 2004-05-11 2SK3561 RDS (ON) ­ Tc IDR ­ VDS 100 COMMON SOURCE , (V) DRAIN-SOURCE ON RESISTANCE RDS (ON) (m ) 5 (nC) 2004-05-11 2SK3561


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PDF 2SK3561 K3561 transistor k3561 2SK3561 2SK3561 equivalent k3561 Silicon N Channel MOS Type k3561 transistor 2sk3561 datasheet
K3561

Abstract: transistor k3561 2SK3561 k3561 transistor k356 k3561 transistor application K3561 data transistor 2sK3561
Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3561 Switching , is an electrostatic-sensitive device. Please handle with caution. 1 3 2006-11-06 2SK3561 , 2006-11-06 2SK3561 ID ­ VDS ID ­ VDS COMMON SOURCE Tc = 25°C PULSE TEST 1015 5.25 6 , DRAIN CURRENT ID 3 100 (A) 2006-11-06 2SK3561 RDS (ON) ­ Tc IDR ­ VDS 100 , ) 2006-11-06 2SK3561 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth ­ tw 10 1


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PDF 2SK3561 K3561 transistor k3561 2SK3561 k3561 transistor k356 k3561 transistor application K3561 data transistor 2sK3561
2004 - Not Available

Abstract: No abstract text available
Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 , handle with caution. 3 1 2004-07-01 2SK3561 Electrical Characteristics (Ta = 25 , lead (Pb)-free finish. 2 2004-07-01 2SK3561 ID – VDS ID – VDS 8 20 COMMON , 2SK3561 RDS (ON) – Tc IDR – VDS 100 COMMON SOURCE DRAIN REVERSE CURRENT IDR (A) PULSE , (V) DRAIN-SOURCE ON RESISTANCE RDS (ON) (m Ω) 5 (nC) 2004-07-01 2SK3561


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PDF 2SK3561
2005 - K3561

Abstract: transistor k3561 2sk3561 2SK3561 equivalent 40VDS k3561 transistor k3561 Silicon N Channel MOS Type
Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3561 Switching , is an electrostatic-sensitive device. Please handle with caution. 3 1 2005-01-26 2SK3561 , 2005-01-26 2SK3561 ID ­ VDS ID ­ VDS 8 20 COMMON SOURCE 1015 Tc = 25°C PULSE TEST , VGS = 10 V15V 1 10 DRAIN CURRENT ID 3 100 (A) 2005-01-26 2SK3561 RDS (ON , ) ( ) 2.0 (nC) 2005-01-26 2SK3561 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c


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PDF 2SK3561 K3561 transistor k3561 2sk3561 2SK3561 equivalent 40VDS k3561 transistor k3561 Silicon N Channel MOS Type
2009 - K3561

Abstract: transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application
Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3561 Switching , is an electrostatic-sensitive device. Please handle with caution. 1 3 2009-09-29 2SK3561 , equipment. 2 2009-09-29 2SK3561 ID ­ VDS ID ­ VDS COMMON SOURCE Tc = 25°C PULSE TEST , 10 DRAIN CURRENT ID 3 100 (A) 2009-09-29 2SK3561 RDS (ON) ­ Tc IDR ­ VDS , (nC) 2009-09-29 2SK3561 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth ­


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PDF 2SK3561 K3561 transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application
2003 - k3561

Abstract: 2SK3561 K356
Text: 2SK3561 NMOS (-MOSVI) 2SK3561 : mm : RDS (ON) = 0.75 () : |Yfs| = 6.5 S , : () VDD=90V,Tch=25(),L=8.3mH,IAR=8A,RG=25 3: 1 3 MOS 1 2009-09-29 2SK3561 , 2SK3561 ID ­ VDS ID ­ VDS Tc = 25°C 5.25 1015 1015 5 (A) 6 ID 8 20 , ) 2009-09-29 2SK3561 RDS (ON) ­ Tc IDR ­ VDS 100 2.0 Tc = 25°C (A) VGS = 10 V 1.6 , ) 2009-09-29 2SK3561 rth ­ tw () rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05


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PDF 2SK3561 SC-67 2-10U1B k3561 2SK3561 K356
2003 - K3561

Abstract: transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356
Text: TENTATIVE 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) 2SK3561 unit Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k) VDGR 500 V Gate-source voltage , device. Please handle with caution. 3 1 2003-01-27 TENTATIVE 2SK3561 Electrical , A) Year (Last Number of the Christian Era) 2 2003-01-27 2SK3561 RESTRICTIONS ON


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PDF 2SK3561 K3561 transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356
2003 - Power MOSFET, toshiba

Abstract: 2sk3561 4502 mosfet HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK3742 2SK2842 design new high speed mosfet 2SK3567 equivalent
Text: -220NIS:2SK2543 TO-220SIS: 2SK3561 Qg Qg 30 30 Qg (nC) 35 25 20 15 VGS 15 TO-220NIS:2SK2543 2SK2543 25 20 SW OFF 2SK3561 Qg 35 Qg (nC) TO-220NIS TO-220SIS 2SK2543 2SK3561 VDSS(V) 500V 500V 8A 8A I D(A) RDS(ON)() 0.85 0.85 Qg(nC) 30 28 toff(ns) 147 137 toff TO-220SIS: 2SK3561 toff toff 152 144 136 toff (ns) toff (ns) 160 152 , Up Conventional Part Number 2SK3563 2SK3561 2SK3568 2SK3567 2SK3562 2SK3667 2SK3569 2SK3566


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PDF VDSS100V) DP0530019 O-220SIS Power MOSFET, toshiba 2sk3561 4502 mosfet HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK3742 2SK2842 design new high speed mosfet 2SK3567 equivalent
2006 - K3561

Abstract: transistor k3561 k3561 transistor k3561 transistor application 2sk3561
Text: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3561 Switching , electrostatic-sensitive device. Please handle with caution. 1 3 1 2006-11-06 2SK3561 Electrical , (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK3561 ID ­ VDS 10 COMMON , 2006-11-06 2SK3561 RDS (ON) ­ Tc 2.0 100 IDR ­ VDS DRAIN REVERSE CURRENT IDR (A) COMMON SOURCE Tc , 2006-11-06 2SK3561 rth ­ tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty


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PDF 2SK3561 K3561 transistor k3561 k3561 transistor k3561 transistor application 2sk3561
2SK3562 equivalent

Abstract: 2SK3561 2SK3759 2SK3566 to220sis 2SK3561 equivalent 2SK3568 equivalent 2SK3757 2SK3566 equivalent 2SK3563
Text: -220SIS: 2SK3561 Qg Qg Qg 35 30 30 Qg (nC) 35 Qg (nC) V DSS(V) I D(A) R DS(ON)() Qg(nC) toff(ns) TO-220NIS TO-220SIS 2SK2543 2SK3561 500V 500V 8A 8A 0.85 0.85 30 28 147 137 25 25 20 15 SW OFF VGS 20 15 TO-220NIS:2SK2543 2SK3561 2SK2543 toff TO-220SIS: 2SK3561 toff toff 152 144 136 toff (ns) toff (ns) 160 152 VDS 160 144 136 , Schedule 2SK3757# 2SK3563 450 500 2 5 RDS(ON) (Max)() 2.45 1.5 2SK3561 2SK3568


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PDF DP0540007 O-220SIS O-220NIS. O-220NIS O-220SIS 2SK3562 equivalent 2SK3561 2SK3759 2SK3566 to220sis 2SK3561 equivalent 2SK3568 equivalent 2SK3757 2SK3566 equivalent 2SK3563
2002 - 2SK3562

Abstract: 2SK2996 2SK3568 2SK3561 2SK3567 MRAM TO220-NIS 2SK3667 2SK2545 220SIS
Text: toff10% 3 VDSS(V) 2SK3563 2SK3561 2SK3568 2SK3567 2SK3562 2SK3667 2SK3569


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PDF 03-3457-3405FAX. 300mmLSI 200343500300mm 100m2 800m2 700m2 TC7MTX03FK 10msMAX) 2SK3562 2SK2996 2SK3568 2SK3561 2SK3567 MRAM TO220-NIS 2SK3667 2SK2545 220SIS
sec irf840

Abstract: testing smps circuit power supply IRF840 APPLICATION Transistor IRF840 500V 8 TO220 CEP840N CEF840N FQP9N50 ssm840p irf840 FQI9N50
Text: IRF840A STP9NB50 FQI9N50 500V APEC SSM840P IRF840S TOSHIBA 2SK3561 2SK2542 2SK2776


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PDF CEP840N/CEB840N CEI840N/CEF840N CEP840N CEB840N CEI840N CEF840N O-220 O-263 O-262 O-220F sec irf840 testing smps circuit power supply IRF840 APPLICATION Transistor IRF840 500V 8 TO220 CEP840N CEF840N FQP9N50 ssm840p irf840 FQI9N50
2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: -220SIS TK11A55D TK14A55D Absolute Maximum Ratings VDSS (V) 8 10 0.85 2SK3561 TO-220SIS 0.7 , 2SK3561 2SK2842 2SK2698 2SK3132 2SK3907 2SK3562 2SK3569 2SK3797 2SK3911 Characteristics of , 2SK3869 2SK3935 2SK3904 2SK3563 2SK3863 2SK4103 2SK3561 2SK3568 2SK4012 2SK3934 2SK4107 2SK3905


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PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: ) TPCA8107-H (0.03) TPC8110 (0.025) 7.5 2SK2542 (0.85) 2SK2776 (0.85) 2SK3538 (0.85) 2SK3561 (0.85 , -220SIS TO-220SIS TO-220SIS TO-3P(N) Standard Type 2SK3563 2SK2991 2SK3561 2SK2842 2SK2698 2SK3132 , 2SK3561 2SK3568 2SK4012 2SK3934 TK15H50C 2SK4107 2SK3905 TK19H50C TK20H50C 2SK4108 2SK3767


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PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Text: (0.85) 2SK3538(0.85) 2SK4105(0.85) 2SK3561 (0.85) 2SK4042(0.97) 2SK2350(0.4) New PW-Mold TO , 400 2SK2662 2SK3563 2SK2991 2SK3561 ID (A) Series MACH-I MACH-II · High-Speed , 2SK3563 2SK3863 2SK4105 2SK3561 2SK4106 2SK3568 2SK4012 2SK3934 2SK4107 TK15H50C 2SK3905


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PDF BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
2sk3625

Abstract: 2SK3566 equivalent 2SK3868 2sj618 NTPCA8008-H 2SK3878 2SK2611 2sk 2sj complementary mosfet MOSFET TOSHIBA 2SK2917 TPC8107
Text: ) 2SK3538 (0.85) 2SK3561 (0.85) 2SK3759 (0.85) 8 8.5 2SK2608 (4.3) 2SK2700 (4.3) 2SK2719 (4.3 , 2SK3758 500 5 58 TO-220AB 1.35 1.5 10 2.5 16 2SK3561 500 8 40 TO


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PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2sk3625 2SK3566 equivalent 2SK3868 2sj618 NTPCA8008-H 2SK3878 2SK2611 2sk 2sj complementary mosfet MOSFET TOSHIBA 2SK2917 TPC8107
MOSFET TOSHIBA 2SK2917

Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2843 equivalent 2SK2837 equivalent
Text: Schedule 2SK3757# 2SK3563 450 500 2 5 RDS(ON) (Max)() 2.45 1.5 2SK3561 2SK3568


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PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2843 equivalent 2SK2837 equivalent
2007 - TA1343NG

Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Text: ) 2SK2542(0.85) 2SK2543(0.85) 2SK2776(0.85) 2SK3538(0.85) 2SK3561 (0.85) 2SK4042(0.97) 8 8.5


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PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK2013 2SK3869 toshiba POWER MOS FET 2sj 2sk 2SK3567 equivalent 2SK2718 2SK3868
Text: (0.85) 2SK2776 (0.85) 2SK3538 (0.85) 2SK3561 (0.85) 2SK3759 (0.85) 8 8.5 2SK2610 (2.5 , 2SK3758 500 5 58 TO-220AB 1.35 1.5 10 2.5 16 2SK3561 500 8 40 TO


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PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK2013 2SK3869 toshiba POWER MOS FET 2sj 2sk 2SK3567 equivalent 2SK2718 2SK3868
TK10A60D

Abstract: 4614 mosfet TB6817WBG TK15A50D 2sk3911 TB-7005 TPC8A03 TCV7102F TPCA8030-H CMS19
Text: 8 10 0.85 2SK3561 TO-220SIS 0.7 - TO-220SIS TK12A50D 12 0.52 2SK3568 , 10 4 185 2SK3561 500 12 40 TO-220NIS 0.62 10 6 90 2SK2842 500


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PDF TLP285/TLP781 TB6818FG/TB6819FG) TK60A08J1 TK15A50D TK13A60D TLP181/TLP283/TLP285/TLP781 TLP781 DL2CZ47A 10FL2CZ47A 10GL2CZ47A TK10A60D 4614 mosfet TB6817WBG TK15A50D 2sk3911 TB-7005 TPC8A03 TCV7102F TPCA8030-H CMS19
2sK2750 equivalent

Abstract: 2SK3567 equivalent 4614 mosfet 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent 2SK2545 equivalent toshiba f5d 2SK3566 equivalent 2sk3625
Text: Wire Part Number 2SK3757 2SK3563 2SK3868* 2SK3561 2SK4042 2SK3568 2SK4012 2SK3934 2SK3767


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PDF POWERMOSFET07) TPC6004 TPC6003 TPC6005 TPC6006-H TPC6105 D-40549 2sK2750 equivalent 2SK3567 equivalent 4614 mosfet 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent 2SK2545 equivalent toshiba f5d 2SK3566 equivalent 2sk3625
TC7600FNG

Abstract: TMP91FU62 TB6584FNG TB6819 TA2181AFNG TK5A50D fag 23 mg TB6575FNG 2SK3767 TB6674
Text: 2SK3561 , 2SK3568, TK8A50D, TK12A50D 32 W × 4 4.6 A 2SK3934, TK15A50D 32 W 0.7 A 32 W +


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PDF TMPM370/TMP19A71 GT30J122 DC1I583 SCJ0013D SCJ0013C TC7600FNG TMP91FU62 TB6584FNG TB6819 TA2181AFNG TK5A50D fag 23 mg TB6575FNG 2SK3767 TB6674
TK12A10K3

Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TK8A10K3 TPCA8077 TJ9A10M3
Text: No file text available


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PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TK8A10K3 TPCA8077 TJ9A10M3
2SK4207

Abstract: to220sis TPCA*8023 TK40A08K3 2SK4112 TPC8119 tk80A08K3 2sk3568 ssm3j16fs TPC8A03
Text: No file text available


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PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 TK40A08K3 2SK4112 TPC8119 tk80A08K3 2sk3568 ssm3j16fs TPC8A03
2sK2750 equivalent

Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
Text: ) 2SK2542(0.85) 2SK2543(0.85) 2SK2776(0.85) 2SK3538(0.85) 2SK3626(0.85) 2SK3561 (0.85) 2SK3759(0.85 , ) (1.4) 2SK3561 500 2SK3568 -MOS VI -MOS IV 5: Under development 22


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PDF O-220SIS BCE0017A 2sK2750 equivalent equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
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