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2SK3216-01 Fuji Electric Co Ltd Bristol Electronics 50 - -
2SK3216-01SC Fuji Electric Co Ltd Chip1Stop 100 $21.80 $17.80

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2SK3216-01 datasheet (2)

Part Manufacturer Description Type PDF
2SK3216-01 Fuji Electric N-CHANNEL SILICON POWER MOS-FET Original PDF
2SK3216-01 Collmer Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFETS Scan PDF

2SK3216-01 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - mosfet to-220ab

Abstract: mosfet 4800 2SK3216-01 2SK3216
Text: 2SK3216-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof , channel to ambient Min. Typ. Max. 0.93 75.0 Units °C/W °C/W 1 2SK3216-01 FUJI , 120 ID [A] 2 2SK3216-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch , 10 2 ID [A] 3 2SK3216-01 FUJI POWER MOSFET Maximum Avalanche Current vs. starting


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PDF 2SK3216-01 O-220AB -55ch mosfet to-220ab mosfet 4800 2SK3216-01 2SK3216
1999 - Not Available

Abstract: No abstract text available
Text: 2SK3216-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof , , TX 75370 - 972-733-1700 - www.fujisemiconductor.com 1 2SK3216-01 FUJI POWER MOSFET , 40 60 80 100 120 ID [A] 2 2SK3216-01 FUJI POWER MOSFET Gate Threshold , ] 3 2SK3216-01 FUJI POWER MOSFET Maximum Avalanche Current vs. starting Tch I(AV)=f(starting


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PDF 2SK3216-01 O-220AB
1999 - 2SK3216

Abstract: No abstract text available
Text: 2SK3216-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof , °C/W 1 2SK3216-01 FUJI POWER MOSFET Characteristics Safe operating area ID=f(VDS , 2SK3216-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID , 1 10 2 ID [A] 3 2SK3216-01 FUJI POWER MOSFET Maximum Avalanche Current vs


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PDF 2SK3216-01 O-220AB 2SK3216
mosfet 4800

Abstract: MOSFET 100V 2SK3216-01 power mosfet 200A diode k 1140
Text: 2SK3216-01 N-channel MOS-FET 100V > Features - 25m ±200A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and , : 069-66 90 29-0; Fax: 069-66 90 29-56 Typ. Max. 0,93 75,0 Unit °C/W °C/W 2SK3216-01 , [s] 2SK3216-01 N-channel MOS-FET 100V 25m ±200A 135W > Characteristics PD


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PDF 2SK3216-01 mosfet 4800 MOSFET 100V 2SK3216-01 power mosfet 200A diode k 1140
220TQ

Abstract: No abstract text available
Text: ) 2SK2900-01 2SK2902-01MR 2SK2901-01L.S 2SK2903-01MR 2SK2904-01 2SK2906-01 2SK2907-01R 2SK2905-01R 2SK3216-01


OCR Scan
PDF 2SK2806-01 2SK2807-01L 2SK2808-01 2SK2890-01 2SK2687-01 2SK2688-01L 2SK2689-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 220TQ
2001 - F8006N

Abstract: 2SK3363-01 2SK2892-01R 2SK2890-01MR 2SK2808-01MR 2SK2807-01L 2SK2806-01 2SK2690 2SK2689-01MR 2SK2688-01L
Text: 2SK2907-01R 2SK3216-01 2SK3217-01MR 2SK3218-01 2SK3219-01MR 2SK3262-01MR 1 VDSS ID ID (pulse


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PDF F8006N F7007N 2SK2806-01 2SK2807-01L, 2SK2808-01MR 2SK2687-01 2SK2688-01L, 2SK2689-01MR 2SK3363-01 2SK2890-01MR F8006N 2SK3363-01 2SK2892-01R 2SK2890-01MR 2SK2808-01MR 2SK2807-01L 2SK2806-01 2SK2690 2SK2689-01MR 2SK2688-01L
2002 - Not Available

Abstract: No abstract text available
Text: MOSFET / Power MOSFETs MOSFET Power MOSFET FAPIIIB FAPIIIB series 2 Lowon resistance Device type F8006N F7007N 2SK2806-01 2SK2807-01L, S 2SK2808-01MR 2SK2687-01 2SK2688-01L, S 2SK2689-01MR 2SK3363-01 2SK2890-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 2SK2894-01R 2SK2895-01 2SK2896-01L, S 2SK2897-01MR 2SK2900-01 2SK2901-01L, S 2SK2902-01MR 2SK3362-01 2SK2809-01MR 2SK3364-01 2SK2903-01MR 2SK2905-01R 2SK2691-01R 2SK2690-01 2SK2904-01 2SK2898-01 2SK2899-01R 2SK2906-01 2SK2907-01R 2SK3216-01 2SK3217-01MR


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PDF F8006N F7007N 2SK2806-01 2SK2807-01L, 2SK2808-01MR 2SK2687-01 2SK2688-01L, 2SK2689-01MR 2SK3363-01 2SK2890-01MR
TO220 Semiconductor Packaging

Abstract: MOSFET HIGH VOLTAGE mosfet 4800 2SK2642-01MR 2SK208 4800 mosfet
Text: 0.006 9000 1250 250 285 TO3P 2SK3216-01 FAP-IIIBH 100 45.0 80 — 0.026 4800 1140 186 240 TO220


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PDF 2SJ314-01L 2SJ314-01S ESJC30-08 CS57-04A CS54-08A CS52-12A CS52-14A CS56-24 TO220 Semiconductor Packaging MOSFET HIGH VOLTAGE mosfet 4800 2SK2642-01MR 2SK208 4800 mosfet
2SK2652

Abstract: 2SK2771-01R
Text: 2SK3216-01 30 45 0.055 0.026 | 120 FAPIII 2SK2226-01L.S 20 0.08 FAPIIIBH 150 2SK3218-01 35


OCR Scan
PDF F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R
F5022

Abstract: f5017h F5021H f5016h 2sk2696 2sk3528 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: 2SK2690-01 2SK2904-01 2SK2898-01 2SK2899-01R 2SK2906-01 2SK2907-01R 2SK3216-01 2SK3217-01MR


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PDF 2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk2696 2sk3528 F5038H 2SK3102-01R 2SK2696-01MR F5018
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
Text: 2SK2918-01 2SK3216-01 2SK3217-01MR 2SK3218-01 2SK3264-01MR 2SK3270-01 2SK3337-01 2SK3338-01


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
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