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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
PGA411QPAPRQ1 PGA411QPAPRQ1 ECAD Model Texas Instruments Resolver-to-digital converter with integrated exciter amplifier and power supply 64-HTQFP -40 to 125
LM2917MX/NOPB LM2917MX/NOPB ECAD Model Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85
VFC320CM1 VFC320CM1 ECAD Model Texas Instruments Voltage-to-Frequency and Frequency-to-Voltage Converter 10-TO-100
LM2917MX-8 LM2917MX-8 ECAD Model Texas Instruments Frequency to Voltage Converter 8-SOIC -40 to 85
LM2907N/NOPB LM2907N/NOPB ECAD Model Texas Instruments Frequency to Voltage Converter 14-PDIP -40 to 85
LM2907M-8/NOPB LM2907M-8/NOPB ECAD Model Texas Instruments Frequency to Voltage Converter 8-SOIC -40 to 85

2SK30ATM-R(F) Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TOSHIBA 2SK30ATM

Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0
Text: °C f = 12 1/ 0Hz lk / 10k / \\ r L V / / r 0.4 0.8 , (Max.) (VGg=-30V) • Low Noise : NF = 0.5dB (Typ.) (VDS = 15V, VGg = 0, RG = 100kn, f = 120Hz , 10V, Iß —0.1/^A -0.4 — -5.0 v Forward Transfer Admittance lYfsl VDS = 10V, VGS = 0, f = 1kHz 1.2 — — mS Input Capacitance Ciss VGS = 0, Vj)S = 0, f = 1MHz — 8.2 — pF Reverse Transfer Capacitance Crss VGD= _10V, VdS-0, f = 1MHz — 2.6 — pF Noise Figure NF VDS = 15V, VGS = 0 RG = 100kn, f


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PDF 2SK30ATM 100kn, 120Hz) SC-43 TOSHIBA 2SK30ATM 2SK30ATM 2SK30ATM Y 2SK30ATM 0
2SK30

Abstract: 2sK30 fet 2SK34 2SK19TM FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
Text: - 28 - S S tt S m m <1 it f f ■í * 1 K * * 5Ë <8 ü Si itö 14 (Ta , ) Vds (V) (min) (V) (max) (V) Vds (V) Id (A) (min) (S) W Vds (V) Id (A) 2SJ299(L)(S) Hjï HS PS» MOS r , PSW MOS r e -20 DSS ±20 S -10 D 12 ±10« ±16 -0. lm -16 -1 -2. 5 -10 -1« 6 9 -10 -5 2SJ317 si str. pa MOS F e -12 DSS ,±7 s ±2 D 1 ±5« ±6.5 -1« -8 -0.4 -1.4 -5 -100 M 1 2.3 -5 -1 2SK11 , f (Hz) Rg (0) Vas m Id (A) 840 280 0 -10 0.13 -10 -3 ton=90ns, toff=190nstyp ID=-3A, VGS


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PDF 2SJ299 2SJ300 2SJ317 2SK11 2SK12 10DGS, 2SK41NP 2SK25 2SK30ATM 2SK30 2SK30 2sK30 fet 2SK34 2SK19TM FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
2003 - 2SK30ATM

Abstract: 2SK30A 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
Text: ) Forward transfer admittance Yfs VDS = 10 V, VGS = 0, f = 1 kHz 1.2 mS Input capacitance Ciss VGS = 0, VDS = 0, f = 1 MHz 8.2 pF Reverse transfer capacitance Crss VGD = -10 V, VDS = 0, f = 1 MHz 2.6 pF Noise figure NF 0.5 5.0 dB Note: IDSS classification VDS = 15 V, VGS = 0 RG = 100 k, f = 120 Hz R : 0.30~0.75, O , -30 V) · Low noise: NF = 0.5dB (typ.) (VDS = 15 V, VGS = 0, RG = 100 k, f = 120 Hz) Maximum


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PDF 2SK30ATM SC-43 2SK30ATM 2SK30A 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
2007 - 2SK30ATM

Abstract: 2SK30ATM Y 2SK30ATM 0
Text: RG = 100 k, f = 120 Hz R : 0.30~0.75, O: 0.60~1.40, Y: 1.20~3.00, GR: 2.60~6.50 1 2007-11-01 , : mm Low noise: NF = 0.5dB (typ.) (VDS = 15 V, VGS = 0, RG = 100 k, f = 120 Hz) Absolute Maximum , , VGS = 0, f = 1 kHz 1.2 mS Input capacitance Ciss VGS = 0, VDS = 0, f = 1 MHz 8.2 pF Reverse transfer capacitance Crss VGD = -10 V, VDS = 0, f = 1 MHz 2.6


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PDF 2SK30ATM 2SK30ATM 2SK30ATM Y 2SK30ATM 0
2SK30A

Abstract: 2SK30ATM 0 2SK30ATM
Text: : IGgg=-InA (Max.) (VGg=-30V) : NF = 0.5dB (Typ.) (VDS = 15V, VGg = 0, RG = 100kn, f = 120Hz) MAXIMUM RATINGS , €” -5.0 V Forward Transfer Admittance lYfsl VDg = 10V, VGg = 0, f = 1kHz 1.2 — — mS Input Capacitance Ciss VGS = 0, VDS = 0, f = 1MHz — 8.2 — pF Reverse Transfer Capacitance Crss VGD= _10V, Vj)S = 0, f = 1MHz — 2.6 — pF Noise Figure NF VDS = 15V, VGg = 0 RG = 100kH, f = 120Hz — 0.5 5.0 dB Note : IdSS Classification R : 0.30-0.75, 0:0.60-1.40, Y : 1.20-3.00, GR: 2.60-6.50 _961001EAA2 0


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PDF 2SK30ATM 100kn, 120Hz) SC-43 100kO 2SK30A 2SK30ATM 0 2SK30ATM
2003 - 2SK30ATM

Abstract: 2SK30ATM Y 2SK30ATM 0 2SK30A
Text: (OFF) Forward transfer admittance ïYfsï VDS = 10 V, VGS = 0, f = 1 kHz 1.2 ¾ ¾ mS Input capacitance Ciss VGS = 0, VDS = 0, f = 1 MHz ¾ 8.2 ¾ pF Reverse transfer capacitance Crss VGD = -10 V, VDS = 0, f = 1 MHz ¾ 2.6 ¾ pF Noise figure NF ¾ 0.5 5.0 dB Note: IDSS classification VDS = 15 V, VGS = 0 RG = 100 kW, f = 120 Hz R , -30 V) · Low noise: NF = 0.5dB (typ.) (VDS = 15 V, VGS = 0, RG = 100 k, f = 120 Hz) Maximum


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PDF 2SK30ATM SC-43 2SK30ATM 2SK30ATM Y 2SK30ATM 0 2SK30A
2SK30ATM 0

Abstract: 2SK30ATM TOSHIBA 2SK30ATM
Text: Admittance |Yfs| VDs = 10V, VGS = 0, f = 1kHz 1.2 — — mS Input Capacitance Ciss VGS = 0> VDS = 0, f = 1MHz — 8.2 — PF Reverse Transfer Capacitance Crss VGD=-10V, VDg = 0, f = 1MHz — 2.6 — pF Noise Figure NF VDS = 15V, VGg = 0 RG= lOOkil, f = 120Hz — 0.5 5.0 dB Note : IdSS Classification R : 0.30-0.75 , €¢ Low Noise : NF = 0.5dB (Typ.) (VDS = 15V, VGS = 0, RG = 100ka, f = 120 Hz) MAXIMUM RATINGS (Ta = 25°C) , 5.1 MAX r I I 4.7 MAX. o-« . 0 55 MAX I |p 0.45 1.27 a ; <-\i 1.27


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PDF 2SK30ATM 100ka, 100ka 2SK30ATM 0 TOSHIBA 2SK30ATM
2SK30A

Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
Text: (Max.) (VGg= — 30V) • Low Noise : NF = 0.5dB (Typ.) (VDS = 15V, VGS = 0, RG = 100ka, f = 120 Hz) MAXIMUM RATINGS (Ta = 25°C) , 5.1 MAX r I I 4.7 MAX. o-« . 0 55 MAX I |p , (OFF) VDS = 10V, ID = 0.1^A -0.4 — -5.0 V Forward Transfer Admittance |Yfs| VDs = 10V, VGS = 0, f = 1kHz 1.2 — — mS Input Capacitance Ciss VGS = 0> VDS = 0, f = 1MHz — 8.2 — PF Reverse Transfer Capacitance Crss VGD=-10V, VDg = 0, f = 1MHz — 2.6 — pF Noise Figure NF VDS = 15V, VGg = 0 RG= lOOkil, f


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PDF 2SK30ATM 100ka, 100ka 2SK30A 2SK30ATM 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM
2009 - 2SK30A

Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0
Text: ) Forward transfer admittance Yfs VDS = 10 V, VGS = 0, f = 1 kHz 1.2 mS Input capacitance Ciss VGS = 0, VDS = 0, f = 1 MHz 8.2 pF Reverse transfer capacitance Crss VGD = -10 V, VDS = 0, f = 1 MHz 2.6 pF Noise figure NF 0.5 5.0 dB Note: IDSS classification VDS = 15 V, VGS = 0 RG = 100 k, f = 120 Hz R : 0.30~0.75, O , : mm Low noise: NF = 0.5 dB (typ.) (VDS = 15 V, VGS = 0, RG = 100 k, f = 120 Hz) Absolute


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PDF 2SK30ATM 2SK30A 2SK30ATM 2SK30ATM Y 2SK30ATM 0
Not Available

Abstract: No abstract text available
Text: = 100kn, f = 120Hz) 0.45 0.55 MAX. 0.45 1.27 1.27 MAXIMUM RATINGS (Ta = 25 , Transfer 1.2 VDS = 10V, VGS = 0, f = 1kHz lYfsl Admittance — Input Capacitance V g S = 0, VDS = 0, f = 1MHz Ciss Reverse Transfer VGD= -10V , VDS = 0> f = 1MHz — Crss Capacitance VDS = 15V, VGg = 0 NF — Noise Figure RG= lOOkil, f =120Hz Note : Id SS Classification mA — 6.5 -5 .0 — — 8.2 — V mS pF 2.6 — pF 0.5 5.0 dB — R


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PDF 2SK30ATM 100kn, 120Hz)
2SK520

Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK518 2SK519 2SK514 2sk43
Text: -15 6m 40m 5 -2. 5 5 10 « 20» 5 10» 2SK505 NEC f r ¿ss A J N D -15 GDO -15 0 5m G 400m -ln -10 , - 28 - S S tt S m m <1 it f f ■í * 1 K * * 5Ë <8 ü Si itö 14 (Ta , ) Vds (V) (min) (V) (max) (V) Vds (V) Id (A) (min) (S) W Vds (V) Id (A) 2SJ299(L)(S) Hjï HS PS» MOS r , PSW MOS r e -20 DSS ±20 S -10 D 12 ±10« ±16 -0. lm -16 -1 -2. 5 -10 -1« 6 9 -10 -5 2SJ317 si str. pa MOS F e -12 DSS ,±7 s ±2 D 1 ±5« ±6.5 -1« -8 -0.4 -1.4 -5 -100 M 1 2.3 -5 -1 2SK11


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PDF 2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK521 100MHZ 2SK522 20mVmax 2SK523 2SK520 2SK523 2SK508 2SK537 2sk515 2SK511 2SK518 2SK519 2SK514 2sk43
2007 - 2SK30ATM Y

Abstract: 2SK30ATM 0 2sk30atm
Text: (typ.) (VDS = 15 V, VGS = 0, RG = 100 k, f = 120 Hz) Unit: mm Maximum Ratings (Ta = 25 , 0.1 A VDS = 10 V, VGS = 0, f = 1 kHz VGS = 0, VDS = 0, f = 1 MHz VGD = -10 V, VDS = 0, f = 1 MHz VDS = 15 V, VGS = 0 RG = 100 k, f = 120 Hz Weight: 0.21 g (typ.) Min -50 0.3 -0.4 1.2 Typ , R : 0.30~0.75, O: 0.60~1.40, Y: 1.20~3.00, GR: 2.60~6.50 1 2003-03-25 2SK30ATM 2


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PDF 2SK30ATM SC-43 2SK30ATM Y 2SK30ATM 0 2sk30atm
Not Available

Abstract: No abstract text available
Text: herein is presented on ly as a gu id e fo r th e ap p lica tio n s o f o u r products. No resp on sib , ) N O ISE F IG U R E NF (dB) N O ISE F IG U R E NF (dB) R E V E R S E T R A N S F E R C A P A C IT A N C E C r s s R A N S F E R A D M ITT A N C E I Y fs I (m S , (Typ.) (VDS = 15V, VGS = 0, RG = 1 0 0 k a f =120H z) 2 S K 3 QA T M SILICON N CHANNEL JUNCTION , °C) CHARACTERISTIC v ja ie -u ra m v o u a g e SYMBOL VGDS IG PD Tj T s tg RATING -ou UNIT I. J V U R


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PDF 2SK30ATM --50V
2SK68A

Abstract: 2SK44 2sK30 fet 2SK34 2SK60 FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP
Text: GSD 2SK42 13 2.4 0 10 NF=13nV/»Olz f=lkHz, Rg=10kfi 16A SGD 2SK43 - 30 - f R * S  , - 28 - S S tt S m m <1 it f f ■í * 1 K * * 5Ë <8 ü Si itö 14 (Ta , ) Vds (V) (min) (V) (max) (V) Vds (V) Id (A) (min) (S) W Vds (V) Id (A) 2SJ299(L)(S) Hjï HS PS» MOS r , PSW MOS r e -20 DSS ±20 S -10 D 12 ±10« ±16 -0. lm -16 -1 -2. 5 -10 -1« 6 9 -10 -5 2SJ317 si str. pa MOS F e -12 DSS ,±7 s ±2 D 1 ±5« ±6.5 -1« -8 -0.4 -1.4 -5 -100 M 1 2.3 -5 -1 2SK11


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PDF 2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK65 2SK66 2SK1109 2SK67 2SK68A 2SK44 2sK30 fet 2SK34 2SK60 FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP
2SC1815

Abstract: 2sk117 1D4B42 2SK30ATM 6D4B41 k 513 2SC185 2SC521A 2SD867 3D4B41
Text: a 2A b 470 15 V (0.3 A) 1.2 k 2SC1815 ×2 ( 7) 2SC524- R 2SC1815 3 k , 4.5 V VT: ( f = 0.5~100 kHz) 507 50 k [8] 5.12 FET (1) 2SC1815 2SC1815


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PDF 2SK117 02CZ5 02CZ6 2SC1815 2SC3419 2SC521A 2SC1815 2sk117 1D4B42 2SK30ATM 6D4B41 k 513 2SC185 2SC521A 2SD867 3D4B41
2010 - 2SK30ATMY

Abstract: 2SK30ATM Y PN4338 2SK117Y 2SK160A 2SK68A-K MPF3822 2SK30ATM-Y 2SK433 2SK514E
Text: JUNCTION FET Item Number Part Number Manufacturer V(BR)GSS g,. VGS(off) Max ( IGSS Max A) Cln Ma~ Toper ( F ) Max °C) Package Style N-Chann I JFETs, (Cont'd) 2N3068A 2N3068A 2N3068A 2SK381 2SK433 KE3687 PN3687 PN3687 PN3687 2N3687 2SK94 2SK94 2SK160A 2SK160A 2N5647 2N3071 C38 PN4338 PN4338 TMPF4338 TP4338 TP4338 2N4338 MFE2093 2SK30ATM- R 2N3453 2N3456 2N3067 2N3067A 2N3067A 2N5648 SMP3460 TMPF3460 TP3460 TP3460 2N3438 2N3460 2SK515 2SK108 2SK492 KE3686 PN3686 PN3686 2N3686


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PDF 2N3068A 2SK381 2SK433 KE3687 PN3687 2N3687 2SK30ATMY 2SK30ATM Y PN4338 2SK117Y 2SK160A 2SK68A-K MPF3822 2SK30ATM-Y 2SK514E
ISS226

Abstract: ISV99 2sk117 ISV128 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier
Text: FM R F am plifier 10 10 10 30* 15 7 TYP. 9 TYP. 10 TYP. X Y K T 2SK117 2SK 192A 2SK161 2SK241 MOS type FET 7 * O O 1 2SK 302 V H F band amplifier 20* Diode Electrical Characteristic (Ta = 25°C) Type ISSI 54 ISV128 IS S IS I ISSI 84 ISS226 A pplication U H F ~ S band m ixer detecter V H F ~ UHF band a tte n u ato r High Speed Switching High Speed Switching High Speed Switching Vr , . c; . . V (DI S C R E T E /O P T O ) 5bC 0 7 T Q 3 D'^. ¿ FET Type Application V


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PDF 2SK208 2SK30ATM 2SK209 2SK210 2SK211 2SK117 2SK161 2SK241 ISV128 ISS226 ISV99 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier
2003 - mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Text: No file text available


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PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
2SK241 Equivalent FET

Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent gaas fet vhf uhf 2SK161 equivalent
Text: amplification FM R F amplification VHF band amplification Constant current circuit High-speed switching FM RF , (V) (dB) 15 12.5 23 11 10.5 ISz/TYP. Vcc f (V) (MHz) 5 5 5 2 2 Idd NFTYP. Vcc (dB) 4 5.2 4.7 5.2 4.2 (V) f BWTYP. Vcc (V) (MHz) (GHz) 400 500 500 500 500 1.3 2.4 1.3 1.5 1.2 (dBm) -2 2 5 0 0 PoTYP. Vcc f PI (MHz) (dBm) (V) 5 5 5 2 2 400 500 500 500 500 -10 0 0 0 0 , ) VS2 (V) f Application VHF Wide RF Amp. VHF RF Amp. F5 (MHz) 500 200 frpiTYP. 9 9 7 7


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PDF OT-23MOD, OT-143MOD) 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 2SK1771 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent gaas fet vhf uhf 2SK161 equivalent
2sj111 fet

Abstract: 2SJ111 2sj74 2SK170 2SK30ATM 2SK30A 2SJ110
Text: ufcUM o 3: a to -3 (O to cn N ro M 0 > rS W H to n 70 m -3 m \ o 13 -3 O < - r > o > JUNCTION FET < IDSS Type No. A p p lic a t io n General Purpose High lY fs l Lo w Noise High , 2.5 3 15 6 15 3 32 3.6 32 55 55 Crss T Y P . V d NF M AX. F (MHz) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 (dB) 5 2 2 2 2 2 V DS (V) 15 10 10 10 -1 0 -1 0 'd (mA) IDSS 0.5 1 5 -1 -5 f (Hz) 120 1K 1K 1K 1K 1K Rg , : O ' a o o O * - u > J o ÿ c r v J t a m 1 _ n s J IU Ln a b-J LU -J LU V.) O' r


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PDF 2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK363 2SK364 2SK369 2SK373 2SJ74 2sj111 fet 2SJ111 2SK30A 2SJ110
2SJ111

Abstract: 2SJ110 2sj111 fet 2SK369 2SK364 2SK363 2SK362 2SK30ATM 2SK246 2SK117
Text: > JUNCTION FET^ Type No. IDSS |Yfs| TYP. (MIN.) Crss TYP. NF MAX. Application VGDS "G Pd Vds VGS vDs VGS vds F vDs "D f Rg N-Channel P-Channel (V) (mA) (mW) (mA) (V) (V) (mS) (V) (V) (pF) (V) (MHz) 2SK30ATM -50 10 100 0.3-6.5 10 0 (1.2) 10 0 2.6 -10 1 5 15 IDSS 120 100 High lYfsl Low Noise 2SK117 -50 10 300 0.6-14 10 0 15 10 0 3 -10 1 2 10 0.5 1K 1 High lYfsl Low Noise 2SK170 -40 10 400 2.6-20 10 0 22 10 0 6 -10 1 2 10 1 1K 1 Analog


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PDF 2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK363 2SK364 10rrent 2SK373 2SJ74 2SJ111 2SJ110 2sj111 fet 2SK369 2SK364 2SK363 2SK362 2SK30ATM 2SK246 2SK117
2003 - TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Text: (sat) (V) fT (MHz) 1 L/S General-Purpose 10 F /G General-purpose Low , (MHz) 1 L/S General-Purpose 10 F /G General-purpose con-saturation VCE (V , 100 300 ~ 1000 2 10 0.25 200 10 (130) 10 1 F HN1C05FE 2 , 10 80 2 10 F /G General-purpose con-saturation (V) PD (mW) : hFE <, MOS , F /G Muting and Switch High hFE High Speed Switch General-purpose low saturation : hFE


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PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
2SK30A

Abstract: 2SK147 3SK101 2sk117 JFET 2SK30A 2SK30A D 2SK373 2SK170 2SK112 2sc1815
Text: R R / / V 5 6 = 5 & * + 5 , \ J J J + J J + J I = R V L V / R J =JJ V V L / / = J R + FRV V= U + I J J \ \ L R U I V V , L V R R L V U I L L I R / R V R / L / R L V R R / L R 6>V = 6 * \ * = 6 + FRV


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PDF 2SK30A 2SK147 3SK101 2sk117 JFET 2SK30A 2SK30A D 2SK373 2SK170 2SK112 2sc1815
2010 - 2sk30a

Abstract: 2N3066A 2NS047 2SK523-L 2SK30AY j200 2ns04 2SK30ATM 2SK30A-R 2sk68
Text: JUNCTION FET Item Number Part Number Manufacturer V(BR)GSS loss gt. Min (S) Max (V) (A) VGS(Off) Max (V) IGSS Max (A) Clsa Max ( F ) Po Max (W) Derate at (WrC) Toper Max eC) Package Style N-Chann ~ I JFETs, (Co nt' d) 2N3066 2N3066A 2N3066A 2N3066A 2N34SS SMP34S9 TMPF34S9 TP34S9 TP34S9 2N3437 2~3459 S 10 1S 20 2SK426X21 2SK42S 2SK42S UC2130 , ~~~~~3K 5S 60 ~~~~g~:gH 65 2SK30A- R 2SK30A·Y 2SK30ATM·GR 2SKl17GR 2NS196 2NS197 2N5198 2N5199


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PDF 2N3066 2N3066A 2N34SS SMP34S9 TMPF34S9 TP34S9 2N3437 2sk30a 2NS047 2SK523-L 2SK30AY j200 2ns04 2SK30ATM 2SK30A-R 2sk68
2SJ74

Abstract: 2SC3136 2SK118 2SK241 2SC1815 2SA1015 2SA1349 2SA1015 2sc2240 equivalent 2SC1815 2SJ109
Text: 400 40~ 240 12 2 0.4 10 1 (80) 10 2 3.5 hFE R : 40~80 O: 70 , ) (GHz) (mA) (mA) (dB) NF typ. VCE IC f (V) (mA) (GHz) (dB) f VCE IC (V) (mA) (GHz , R : 40~80 O : 70~140 VCE (sat) max VCE IC (V) (mA) Y: 120~240 (V) fT typ , @: (35 × 30 × 1 mm) 20 IC VCE (V) (mA) Note f (Hz) Rg (k) 1 100 M , (V) (mA) (mW) (mA) VDS (V) VGS (V) (mS) VDS (V) VGS (V) (pF) VGD f


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PDF SC-43) 2SC1815 2SA1015 2SC732TM 2SC1815 2SC2240 2SA970 2SC3381 2SA1349 2SJ74 2SC3136 2SK118 2SK241 2SC1815 2SA1015 2SA1349 2SA1015 2sc2240 equivalent 2SJ109
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