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2SK3017(F) Toshiba America Electronic Components Chip1Stop 100 $15.00 $11.70

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2SK3017(F) datasheet (1)

Part Manufacturer Description Type PDF
2SK3017(F) Toshiba 2SK3017 - MOSFET N-CH 900V 8.5A 2-16F1B Original PDF

2SK3017(F) Datasheets Context Search

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2SK3017

Abstract: No abstract text available
Text: TOSHIBA 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK3017 HIGH , /5 TOSHIBA 2SK3017 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , €” s Input Capacitance Ciss VDS — 25V, Vqs = 0V f = 1MHz — 2150 — pF Reverse Transfer , ) 1998-11-12 2/5 TOSHIBA 2SK3017 10 ID - Vds id - VDS COMMON SOURCE Tc = 25°C I 15. /6 10 5.2 , -10V 3 5 10 30 50 100 DRAIN CURRENT ID (A) 1998-11-12 3/5 TOSHIBA 2SK3017 RDS(ON) - Te IDR - VDS ^ ¡5 gs


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PDF 2SK3017 L-12-(
Not Available

Abstract: No abstract text available
Text: TO SHIBA T O SH IB A FIELD EFFECT TRANSISTOR j 2SK3017 SILICON N CH ANN EL M O S TYPE (tt-M O SIII) s k .i V W Ê Ê F m n 1 7 m IN D U S T R IA L A P P L IC A T IO N S U n it in mm HIGH , . 0 TOSHIBA is continually working to improve the quality and the reliability o f its products. Nevertheless, semiconductor ci0vicos in C| s n s j m 3! f u r^cti o r f 3 i! d u s to t h s ir o ls c tric s ! , subject to change w ithout notice. 1998 02-20 - 1/5 TO SHIBA 2SK3017 ELECTRICAL


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PDF 2SK3017 Drain-20 --90V(
Not Available

Abstract: No abstract text available
Text: T O SH IB A 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSHI) 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER , T O SH IB A 2SK3017 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL Gate , (ON) lYfsl VDS = 720V, VGg = 0V C rss VDS = 25V, VGS = 0V f = lM H z Goss tr _ 0 V - ton - ° ö r J |- tf toff h f . /7? ;R L = lo o a 5 Vtvn


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PDF 2SK3017 1-05H
2003 - 2SK3017

Abstract: K3017
Text: 2SK3017 NMOS (-MOSIII) 2SK3017 DC-DC · · : |Yfs| = 7.0 S () · · , : MOS 1 2009-09-29 2SK3017 (Ta = 25°C) · , VDS = 25 V, VGS = 0 V, f = 1 MHz ID = 4 A 10 V ton 4.7 0V tf , ]]/RoHS [[Pb]] RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC) 2 2009-09-29 2SK3017 , ) 3 5 10 3 30 ID 50 100 (A) 2009-09-29 2SK3017 RDS (ON) ­ Tc


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PDF 2SK3017 2-16F1B 2SK3017 K3017
k3017

Abstract: 2SK3017
Text: TOSHIBA_ TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK3017 HIGH , 2SK3017 INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : RDg(ON)-1-^50 (Typ.) High , TOSHIBA 2SK3017 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN , €”4A 3.5 7.0 — s Input Capacitance Ciss VDS — 25V, Vqs = 0V f = 1MHz — 2150 — pF Reverse , ) I-Year (Last Number of the Christian Era) 2000-02-02 2/5 TOSHIBA 2SK3017 10 id - vds id - vds


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PDF 2SK3017 L-12-) k3017 2SK3017
k3017

Abstract: 2SK3017
Text: TOSHIBA 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE , contained herein is subject to change without notice. 2000-12-22 1/5 TOSHIBA 2SK3017 ELECTRICAL , VDS = 25V, VGS = 0V f = 1 MHz — 2150 — pF Reverse Transfer Capacitance Crss — 35 â , ) 2000-12-22 2/5 TOSHIBA 2SK3017 10 id - vds id - vds COMMON SOURCE Tc = 25°C I 15. /6 10


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PDF 2SK3017 k3017 2SK3017
2006 - k3017

Abstract: No abstract text available
Text: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK3017 DC-DC , 2006-11-10 2SK3017 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , , VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 µA, VDS = 0 V VDS = 720 V, VGS = 0 , 2SK3017 3 2006-11-10 2SK3017 4 2006-11-10 2SK3017 RG = 25 VDD = 90 V, L = 24.5 mH EAS = 1 BVDSS L I2 2 B V - DD VDSS 5 2006-11-10 2SK3017 RESTRICTIONS ON


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PDF 2SK3017 k3017
2009 - k3017

Abstract: 2SK3017
Text: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK3017 DC-DC , an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SK3017 , - Rise time Turn-on time VDS = 25 V, VGS = 0 V, f = 1 MHz pF ns Switching time , 2009-09-29 2SK3017 3 2009-09-29 2SK3017 4 2009-09-29 2SK3017 RG = 25 VDD = 90 V, L = 24.5 mH 5 EAS = 1 BVDSS L I2 2 BVDSS - VDD 2009-09-29 2SK3017


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PDF 2SK3017 k3017 2SK3017
2013 - Not Available

Abstract: No abstract text available
Text: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK3017 , . Please handle with caution. Start of commercial production 2007-07 1 2013-11-01 2SK3017 , , f = 1 MHz pF ns Switching time Fall time Turn−off time Total gate charge , 2013-11-01 2SK3017 3 2013-11-01 2SK3017 4 2013-11-01 2SK3017 RG = 25 Ω VDD = 90 V , Ž 2013-11-01 2SK3017 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and


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PDF 2SK3017
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSIII) 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS 2SK3017 IN D U S T R IA L A P P L IC A T IO N S U n it in , subject to change without notice. 1998 11-12 - 1/5 TOSHIBA 2SK3017 ELECTRICAL , Capacitance Rise Tim e Tum-on Tim e Sw itch ing Tim e F a ll Tim e Tum -off Tim e Total G ate Charge , , V G S = 0 V f = 1M Hz - - iov n _ ov- - IA I. D _" ° iH - i h - VOUT - TÌ V D D


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PDF 2SK3017 1-05i
2004 - k3017

Abstract: 2SK3017
Text: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK3017 DC-DC , transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 2SK3017 , S Input capacitance Ciss - 2150 - VDS = 25 V, VGS = 0 V, f = 1 MHz Reverse , (Pb)-free package or lead (Pb)-free finish. 2 2004-07-06 2SK3017 3 2004-07-06 2SK3017 4 2004-07-06 2SK3017 RG = 25 VDD = 90 V, L = 24.5 mH 5 EAS = 1 BVDSS


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PDF 2SK3017 k3017 2SK3017
2002 - Not Available

Abstract: No abstract text available
Text: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK3017 DC-DC , electrostatic sensitive device. Please handle with caution. 1 2002-07-31 2SK3017 Electrical , IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VDS = 25 V, VGS = 0 V, f = 1 MHz Test , µC Marking 2 2002-07-31 2SK3017 3 2002-07-31 2SK3017 4 2002-07-31 2SK3017 RG = 25 VDD = 90 V, L = 24.5 mH EAS = 1 BVDSS L I2 2 BVDSS - VDD 5


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PDF 2SK3017
2002 - 2SK3017

Abstract: No abstract text available
Text: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK3017 DC-DC , . 1 2002-07-31 2SK3017 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage , , f = 1 MHz Switching time pF ns Fall time Turn-off time Total gate charge (Gate-source , 2SK3017 3 2002-07-31 2SK3017 4 2002-07-31 2SK3017 RG = 25 VDD = 90 V, L = 24.5 mH 5 EAS = 1 BVDSS æ ö × L × I2 × ç ÷ 2 è BVDSS - VDD ø 2002-07-31 2SK3017


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PDF 2SK3017 2SK3017
K3017

Abstract: 2SK3017
Text: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK3017 DC-DC , an electrostatic-sensitive device. Please handle with caution. 1 2006-11-10 2SK3017 , - Rise time Turn-on time VDS = 25 V, VGS = 0 V, f = 1 MHz pF ns Switching time , line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 2SK3017 3 2006-11-10 2SK3017 4 2006-11-10 2SK3017 RG = 25 VDD = 90 V, L = 24.5 mH 5 EAS = 1


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PDF 2SK3017 K3017 2SK3017
Not Available

Abstract: No abstract text available
Text: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( −MOSIII) 2SK3017 , . 1 2009-09-29 2SK3017 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage , 0 V, f = 1 MHz S pF ns Switching time Fall time Turn−off time Total gate charge , 2009-09-29 2SK3017 3 2009-09-29 2SK3017 4 2009-09-29 2SK3017 RG = 25 VDD = 90 V, L = , Ž 2009-09-29 2SK3017 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and


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PDF 2SK3017
2007 - TA1343NG

Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Text: . PLL 2 Y/C M DRAM 6 OSD I/ F RGB QVGA W-VGA 3.3 V 2.5 V 1.5 V , 3.3 V 2.5 V 1.5 V LQFP100 1chip / 3LYCS I/ F SCART VBI OSDI/ F , Station System Flash SDRAM Terrestrial Digital Broadcasting, BS DTV Tuner MPEG2-TS I/ F MPEG2-TS I/ F MeP RF HD Terrestrial Analog Broadcasting ATV Tuner Panel System TC90515XBG MPEG2 encoder Flash SDRAM MPEG2-TS I/ F × 2 TC90515XBG I2C Bus I/ F RF TV CPU


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PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
TB1253N

Abstract: TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F F1814B LB 122s TB1238BN
Text: TA1316 Series PAL/NTSC VCD (YUVI/ F , 25MHz) Wide Band RGB Processor PAL/NTSC VCD (YUV IF , TA1222 Series Next Generation BEP & DPC TA1310 Series NTSC VCD (YUV I/ F , BB Tint, ACB) TB1251 Series World-wide Multi System (1X'tal) Inter/Split IF VCO tank coil less Digital AFT YCbCr I/ F , TA8258H 20W X 2ch HZIP12 TA1287P/ F SW DIP16/MFP16 TA1300AN SDIP24 , TC90A49P VIDEO IN RGB I/ F Sprocess Y/C Y/I/Q TA1276AN RGB C-demo RGB control


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PDF TLP181 AC5000 AC4000 TLP521/TLP621/TLP721Toshiba VDE0884 TLP721 TLP621 TLGU1002 TLOU1002 TB1253N TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F F1814B LB 122s TB1238BN
Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Text: -1.78B Conventional Audio Amplifiers Part Number TA8200AHQ TA8216HQ TA8246AHQ Typ. output ( f = 1 kHz , Standard Panel-Mount Package with Shutter Mini Package with Shutter TOTX147( F ,T) / TOTX177( F ,T) TOTX147L( F ,T) / TOTX177L( F ,T) TOTX147PL( F ,T) / TOTX177PL( F ,T) TORX147( F ,T) / TORX177( F ,T) TORX147L( F ,T) / TORX177L( F ,T) TORX147PL( F ,T) / TORX177PL( F ,T) 13 Microcontrollers Key Features , LEDs Part Number TLN105B( F ) TLN115A( F ) Function For Transmission Photodiodes Min


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PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
2000 - K2543

Abstract: MOSFET TOSHIBA 2SK equivalent 2sk2698 mosfet MOSFET VDS 220V TO-220 2SK2996 equivalent transistor k2543 2sk2997 2SK2679 2SK2837 2sk2917
Text: shows a p VGS falls below the falls and the drain flows through the c obstructed and ID f When VDS , continuous avalanche When Tc = 25°C, f = 10 kHz is specified. Notes: , * When current is applied , 2SK2749 2SK2847 2SK3017 2SK2611 2SK2968 2SK2613 Maximum Ratings VDSS (V) 800 800 800 800 , )748595-42 Toshiba Electronics France SARL Immeuble Robert Schumann 3 Rue de Rome, F , , 100004, China Tel: (010)6590-8795 Fax: (010)6590-8791 Chengdu Office Unit F , 18th Floor, New Times


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2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Text: High-speed diode $ = 10-V drive N = N-ch # = 2.5-V drive 2SK3017 (1.25) 2SK2611(1.4) 2SK3473(1.6 , 2.0 Ciss TK55D10J1 Coss 1000 100 Common source VGS = 0 V, f = 1 MHz Ta = 25°C 0.1


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PDF BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: Voltage: 10% of the VDSSX Package A: TO-220SIS J : TO-3P(N) D: TO-220(W) N: PW-Mold(SMD) F : TO , ) 8 2SK2606 (1.2) 2SK2847 (1.4) 2SK3799 (1.3) 2SK3017 (1.25) TPC8A01 (0.018) 2SK2350


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PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 IGBT GT30J124 2SC5471
Text: No file text available


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PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 IGBT GT30J124 2SC5471
*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 TPCA*8023 GT30F123 GT50N322
Text: No file text available


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PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 TPCA*8023 GT30F123 GT50N322
2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: MOS Voltage: 10% of the VDSSX Package A: TO-220SIS D: TO-220 (W) F : TO-220SM (W) H: TO , ) 2SK4042 (0.97) 2SK2606 (1.2) 2SK2847 (1.4) 2SK3799 (1.3) 2SK3017 (1.25) TPC8A01 (0.018


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PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: No file text available


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PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
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