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2SK2858-T1-A Renesas Electronics Corporation Rochester Electronics 48,000 $0.02 $0.02
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Not Available

Abstract: No abstract text available
Text: HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit : mm) The 2SK2858 is a switching device which can be driven directly by a 2.1  ± 0.1 2.5-V power source. 1.25  ± 0.1 The 2SK2858 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. m CO ol FEATURES 3 ⠀¢ Can be driven by a 2.5-V power source do CO d â , ) ABSOLUTE MAXIMUM RATINGS (T a = 25°C) Drain to Source Voltage V dss 30 V Gate to Source


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PDF 2SK2858 2SK2858 SC-70 D11706EJ2V0DS00
2006 - 2SK2858

Abstract: marking G24 D11706EJ4V0DS00
Text: SWITCHING DESCRIPTION PACKAGE DRAWING (Unit : mm) The 2SK2858 is a switching device which can be driven directly by a 2.1±0.1 2.5 V power source. 1.25±0.1 The 2SK2858 has excellent switching characteristics, and is suitable for 0.65 2 3 1 0.3+0.1 -0 · Can be driven by a 2.5 V power source 0.65 FEATURES 0.3+0.1 -0 2.0±0.2 use as a high-speed switching , V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±0.1 A ID


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PDF 2SK2858 2SK2858 SC-70 marking G24 D11706EJ4V0DS00
2006 - Not Available

Abstract: No abstract text available
Text: document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas , confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular , the quality grade of each Renesas Electronics product before using it in a particular application , product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or , . excision, etc.), and any other applications or purposes that pose a direct threat to human life. You


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Not Available

Abstract: No abstract text available
Text: document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas , confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular , the quality grade of each Renesas Electronics product before using it in a particular application , product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or , healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct


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2006 - 2SK2858

Abstract: No abstract text available
Text: document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas , confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular , grade of each Renesas Electronics product before using it in a particular application. You may not use , specified in a Renesas Electronics data sheets or data books, etc. "Standard": 8. 9. 10. 11 , .), and any other applications or purposes that pose a direct threat to human life. You should use the


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1999 - 2SK2858

Abstract: No abstract text available
Text: HIGH SPEED SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION The 2SK2858 is a switching device which can be driven directly by a 2.1 ± 0.1 0.3 +0.1 ­0 2.5-V power source. The 2SK2858 has , driven by a 2.5-V power source 0.65 FEATURES 2 0.65 2.0 ± 0.2 use as a high-speed , Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±0.1 A ID(pulse) ±0.4 A , of the transistor serves as a protector against ESD. When this device actually used, an additional


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PDF 2SK2858 2SK2858 SC-70
2008 - TRANSISTOR SMD CODE PACKAGE SOT89 52 10A

Abstract: smd code marking NEC 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Text: 3000 1000 -E1, -E2 - T1 , -T2 3000 Taping Type A AZ A Pb-Free Identification , (continued) NEC Noise-clipping Diode (NNCD) NNCD 6.8 X A - T1 Taping Type NEC , management requirements with a wide-ranging product lineup. These solutions take advantage of an innovative , assembly technology based on our long-established experience. Features · Super-low ON-resistance · A , A wide variety of package types to suit every mounting requirement · High reliability based on


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PDF G18756EU3V0SG00 TRANSISTOR SMD CODE PACKAGE SOT89 52 10A smd code marking NEC 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
1999 - SC-59

Abstract: 2SJ178 2SJ211 2SJ355 sp-8 package 2SK1657 SC-84
Text: Transistor Function/Application (Signal MOS FET) VDSS - ID(DC) MAP (4 V Gate-Driven Series) VDSS(V) ID(DC)( A ) 0.1 Road map (RDS(on)MAX/Package) 50 60 2SK1133 (50 / SC-59) 2SJ166 (50 / SC-59) 2SK1590 (6.0 / SC-59) 2SK1592 (2.5 / SC-62) 2SJ212 (1.5 / SC-62) , , 2SJ210 (15 / SC-59) 2SK2109 (1.0 , Series) VDSS(V) ID(DC)( A ) 0.1 16 2SK1580 2SJ202 (15 / SC-70) , (100 / SC-70) 30 (RDS(on)MAX/Package , ) VDSS(V) ID(DC)( A ) 0.1 2.0 3.0 5.0 : VGS = 1.5 V 2SK1958 (50 / SC-70) 2SK1959 (3.2 / SC-62) 2SK1960


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PDF 2SK1133 SC-59) 2SJ166 2SK1590 2SK1592 SC-62) 2SJ212 SC-59 2SJ178 2SJ211 2SJ355 sp-8 package 2SK1657 SC-84
1998 - gsw1

Abstract: SC-59 2SJ series L SC-70
Text: QUANTITY PRICES A typical unit price for a quantity of 100 pieces. It will vary (up or down) depending on


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PDF 200mA 2SK1958 2SK2158 2SK1580 2SK1581 2SK1657 2SK1658 2SK1824 2SK2858 2SK1399 gsw1 SC-59 2SJ series L SC-70
2007 - MPA2733GR

Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
Text: )MAX. at VGS = 10 V *4.5 V *2.5 V -9 0.5 30 -12 2SK1580 T1 , T2 I D ( A , 16 at VGS = 4 V -20 P+P 100 ( A ) mPA2550 P+P -0.1 R DS(on) (W )MAX. T1 , PT, TO-263 (7pin) 180 A 175°C NP IT DC-DC TO , 2008 TO-263-7pin 6 UMOS 6 180 A TO-220 class 110 A TO-220SMD 2004 500 mmf Advanced TO-263 Advanced TO-252 88 A 1998 Bare Die 400 mmf 2010


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PDF O-263 O-252 mPA672T. mPA675T. mPA677TB. mPA678TB. mPA679TB. M8E0710J D18669JJ3V0SG D18669JJ3V0SG003 MPA2733GR MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
1999 - X13769XJ2V0CD00

Abstract: 2sj165 SC-59 SC-84 2SK2541 SC-62 2SK2070 2SK1591 2SK2858 2sk2159
Text: MOS FET VDSS - ID(DC) (4 V ) VDSS(V) ID(DC)( A ) 0.1 (RDS(on)MAX/) 50 2SK1132 (50 / SST) 2SJ165 (50 / SST) 2SK1133 (50 / SC-59) 2SJ166 (50 / SC-59) 2SK1590 (6.0 / SC-59) 2SK1592 (2.5 / SC-62) 2SJ212 (1.5 / SC-62) , , 2SJ210 (15 / SC-59) 2SK2109 (1.0 / SC-62) 30 60 2SK1589 (30 , MOS FET VDSS - ID(DC) (2.5 V ) VDSS(V) ID(DC)( A ) 0.1 16 2SK1580 2SJ202 (15 / SC-70) , (100 / SC , ) (1.5 V ) VDSS(V) ID(DC)( A ) 0.1 2.0 3.0 5.0 : VGS = 1.5 V 2SK1958 (50 / SC-70) 2SK1959 (3.2 / SC


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PDF 2SK1132 2SJ165 2SK1133 SC-59) 2SJ166 2SK1590 2SK1592 SC-62) X13769XJ2V0CD00 2sj165 SC-59 SC-84 2SK2541 SC-62 2SK2070 2SK1591 2SK2858 2sk2159
1996 - transistor k2541

Abstract: K1398 J411 fet K1484 k1482 K679A k1272 k2541 transistor k1272 K1274
Text: SMALL-SIGNAL MOS FET SERIES Signal MOS FET A wide line-up from small-signal interface , MOS FET from the effects of static electricity. If there is a possibility that a voltage higher than , protection circuit. A parasitic diode is formed between the drain and source due to the structure of the MOS FET. 2 Example Comparing Characteristics with a Transistor Containing a Resistor The ON resistance of a MOS FET is almost independent of the current and shows almost a straight curve in the region


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PDF D11050EJ4V0PF00 transistor k2541 K1398 J411 fet K1484 k1482 K679A k1272 k2541 transistor k1272 K1274
2SC5664

Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2sk3326 2SK3918 2SK4075 PC78L05J
Text: Mold) 3000 ( T1 , T2) Power MOSFETs (TJ = 175 degree Celcius) Specifications VDSS(V) ID( A , *0.5 A 0.51 0.38 0.38 Thin Type) 3000 T1 , T2 PA1980 PA507 PA508 Selection Guide , -2) 1000 T1 , T2 2SA1463 2SB624/ A 2SB798 2SB1571 2SA1836 2SA1608 2SA1611 2SA1226 2SA1464 , Planning up to 60 A (target) HVSON (5.2x6.0) 8PIN HSOP Study HVSON (3.3x3.3) 8PIN TSSOP , examples. The incorporation of these circuits, software and information in the design of a customer


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PDF D18597EJ1V0SG 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2sk3326 2SK3918 2SK4075 PC78L05J
2009 - BSS138 NXP

Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 PMV65XP IRLL014N BSP250 FDC638APZ
Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today's market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety of package options, from the larger SOT223 to the world's smallest MOSFET in an SOT883 package- the ultimate in , ) 1700 1300 RDSon typ (m) @ VGS = VDS (V) VGS (V) ID ( A ) Vgs(th) min (V) 5,7 6,3


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PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 PMV65XP IRLL014N BSP250 FDC638APZ
1999 - uPD16305

Abstract: uPD63724A UPC5023 upc5024 2SC1940 uPC1237 UPC458 UPC2710 uPD65656 UPD65943
Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked. When inputting a product name, omit the m . Do not use the wild card character "*". PD43256A , ]ES ]F ]JS ]C ]D ]E NNCD[ NNCD[ NNCD[ NNCD[ NNCD[ NNCD[ NNCD[ NNCD[ ]F ]G ]LG ]LH ]MF ]MG ] A ]B


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PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A UPC5023 upc5024 2SC1940 uPC1237 UPC458 UPC2710 uPD65656 UPD65943
2002 - PD166104GS

Abstract: PA1915TE mp sot 23 uPD166007 UMOS-4 np PD166005GR 2sj598 NP180N04TUG np88n04kug PC78L05T
Text: )1 NP82N055MLE N Nch P Pch ID(DC)( A ) NP82N055KHE ID(DC) NP (UMOS2UMOS3) 1/2 , , NP80N03NDE Tch(MAX.) = 175°C AEC-Q101 Stress Test : TYP.1.2 m NP180N04TUG : ID(DC)=180 A , ) ID(DC)( A ) PT(W)1 -40 -82 150 8 TO-252(MP-3ZK) 55 22 45 39 , -263-7pin (MP-25ZT) ID(DC)( A ) -15 PT(W)1 30 PT(W)1 RDS(on)(m)2 40 NP82N04MLG , (on)(m)2 VDSS(V) ID(DC)( A ) NP15P06SLG Pch TO-252MP-3ZK -60 -15 30 70


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PDF 2SJ607( 2SJ607 PC29L05T OT-89 16cm2 PC1099GS PD166104GS PA1915TE mp sot 23 uPD166007 UMOS-4 np PD166005GR 2sj598 NP180N04TUG np88n04kug PC78L05T
1999 - uPD72002-11

Abstract: uPD16305 uPC1237 uPD65656 upc1701 2sb1099 2SD1392 uPD78F0841 UPD65625 uPG508
Text: ] A ]B 03P2J 03P2M 03P4J 03P4M 03P4MF 03P4MG 03P5J 03P5MG 03P6MG 2P4M 2P5M 2P6M 2S2M 2S4M 2V5P4M


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PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 uPD65656 upc1701 2sb1099 2SD1392 uPD78F0841 UPD65625 uPG508
2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 UPD16861 2SA733A
Text: -T2B-A 1SS303 1SS303- A 1SS303- T1 1SS303-T1-A 1SS303-T2 1SS303-T2-A 1SS304 1SS304- A 1SS304- T1 1SS304 , Devices) 7/708 Feb. 24, 2010 China RoHS Product Name 1SS304-T2-A 1SS305 1SS305- A 1SS305- T1 , ) "-XXX" in the product name indicates a custom code. 2) The Greek letter"" in the product name is written , ether). 6) The presence of a restricted substance up to its permissible limit (Cd: 100 ppm, others: 1000 ppm) in a product is indicated with a circle ("O"); the presence above the limit is indicated


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2000 - pa1476h

Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA1556AH PA571T
Text: CDROM CDROM X13769XJ2V0CD00 08-1 s TO92 V CEO (V) ~ 15 IC ( A ) ~20 , 2SC3616 * (25 V/ 700 mA) AB1[ ] (25 V/ 700 mA) AP1[ ] (25 V/ 700 mA) 2SD1513 (16 V/2.0 A ) 2SB1068 (16 V/2.0 A ) AQ1[ ] (20 V/2.0 A ) 2SB1300 (16 V/3 A ) 2SB1116 2SD1616 2SA953 2SC2002 2SA954 2SC2003 , X13769XJ2V0CD00 08-2 s SST VCEO (V) IC ( A ) ~ 20 m ~ 50 m ~ 15 ~ 20 ~30 ~ 50 SST ~ 120 , [ ] (25 V) ~ 700 m hFE CDROM X13769XJ2V0CD00 08-3 s SP8 VCEO (V) IC ( A ) ~50


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PDF X13769XJ2V0CD00 2SA1206* 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 pa1476h pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA1556AH PA571T
1998 - NEC 10F triac

Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
Text: ) DC/DC converter (chopper type) A chopper power supply is the simplest form of switching power supply. It is used to input a rectified current stepped down with a battery or commercial power supply transformer. This type is suitable for use as a local onboard power supply on a printed circuit board on which a separate DC power supply is created. Chopper-Type Power Supply Using µPC1934 P-ch Power MOSFET , [ ] S, RD [ ] FM Selection Guide G10748EJDV0SG (2) Ringing choke converter type (RCC type) A


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PDF G10748EJDV0SG00 NEC 10F triac 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
1993 - 2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Text: No file text available


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PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
transistor NEC 2SK2500

Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Text: document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas , confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular , grade of each Renesas Electronics product before using it in a particular application. You may not use , specified in a Renesas Electronics data sheets or data books, etc. "Standard": 8. 9. 10. 11 , .), and any other applications or purposes that pose a direct threat to human life. You should use the


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PDF MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
mc10087f1

Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Text: .Identification of Lead-free Products :tne product type is indicated by a code suffixed to the part number. - A , -AZ -AZ -AZ -AZ -AZ -AZ -AZ -AZ -AZ - A - A - A - A - A - A - A - A - A - A - A - A -AZ -AZ , for Lead-free Products Recommended Soldering Conditions for Lead-free Products - A - A - A -AT , -AZ -AZ -AZ -AZ - A -AY -AY -AZ -AZ -AY -AZ -AZ -AZ -AZ -AZ -AZ -AZ -AY -AZ -AY -AT , -AT -AT -AT -AT -AT -AY -AT -AZ -AZ -AZ -AZ -AZ -AZ - A -AZ -AZ -AZ -AZ -AZ -AY -AZ


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PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER kid65003ap equivalent KIA278R12PI equivalent Kf10n60 kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA ä ¸Š http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA æµ· ww ä ¼— w. 韩 ck 授 b- 权 sh ä »£ .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION PRINTED KOREA December, 2013 ä ¸Š æµ· ww ä ¼— w. 韩 ck 授 b- 权 sh ä »£ .c 理 om K The World s Premier Semiconductor Company-K E C Table of Contents ⠖£ BJT 4 Bipolar Junction Transistor Transistor


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PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER kid65003ap equivalent KIA278R12PI equivalent Kf10n60 kia578r05
1998 - 2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent 2SC1845 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SK type 2SD1694 equivalent
Text: TO­92 s TO-92 Type Transistor VCEO (V) ~15 IC ( A ) ~20 m 2SA1206 ~50 m 2SC1674 2SA988 2SA992 , / 700 mA) 2SD1513 (16 V/2.0 A ) 2SB1068 (16 V/2.0 A ) AQ1[ ] (20 V/2.0 A ) 2SB1300 (16 V/3 A ) 2SB1116 , Transistor Quick Reference by Package s SST Type Transistor VCEO (V) I C ( A ) ~20 m ~50 m SST ~15 , 08-3 Transistor Quick Reference by Package SP­8 s SP-8 Type Transistor V CEO (V) I C ( A , ) I C(DC) ( A ) ~0.5 2SB963 2SD1286 2SD1583 2SD992 2SD1164 2SB768 2SD1033 2SC2885 2SC2946 2SA1412


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PDF X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent 2SC1845 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SK type 2SD1694 equivalent
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