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LM2917MX/NOPB LM2917MX/NOPB ECAD Model Texas Instruments Frequency to Voltage Converter 14-SOIC -40 to 85
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2SK2847(F) datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
2SK2847(F) 2SK2847(F) ECAD Model Toshiba 2SK2847 - MOSFET N-CH 900V 8A 2-16F1B Original PDF

2SK2847(F) Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2f3 transistor

Abstract: No abstract text available
Text: T O S H IB A 2SK2847 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSIII) 2SK2847 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in , u ally w o rk in g to im prove th e q u ality and th e reliability o f its products. N evertheless , sensitivity and vulnerab ility to physical stress. It is th e responsibility o f th e buyer, w h e n utilizing T O S H IB A products, to observe standards o f safety, and to avoid situations in w hich a m


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PDF 2SK2847 100//A 2f3 transistor
marking transistor BAS 16

Abstract: No abstract text available
Text: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSIII) 2SK2847 , change w ithout notice. 1998 02-20 - 1/5 TO SHIBA 2SK2847 ELECTRICAL CHARACTERISTICS (Ta , ("M iller") Charge SYMBOL Tr f )V MIN. - , 1mA VGS = 10V? ID = 4A V D S ^ iö V , Id -4A -UV, V D S-25V , VGS = f = 1MHz 1.1 7.0 2040 45 190 25 - - - ton tf toff Qg Qgs Qgd v- lu0; n ^ Id =:4A 1 u L ,¡ : v OUT rL O- f - s =


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PDF 2SK2847 marking transistor BAS 16
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE ( tt-M O SIII) 2SK2847 2SK2847 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER A N D M O TOR DRIVE APPLICATIONS , co n tin u a lly w o r k in g t o im p ro v e th e q u a lity a n d th e reliability o f its products , is th e re sp on sibility o f th e buyer, w h e n utilizing T O S H IB A products, t o o b se rve s ta n d a rd s o f safety, a n d t o a v o id situ atio n s in w h ic h a m a lfu n c tio n o r failu


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PDF 2SK2847 20kil)
2003 - k2847

Abstract: toshiba k2847 2SK2847
Text: 2SK2847 NMOS (-MOSIII) 2SK2847 DC-DC : mm · · : |Yfs| = 7.0 S () · , , IAR = 8 A 3: MOS 1 2009-09-29 2SK2847 (Ta = 25 , = 100 VDS = 25 V, VGS = 0 V, f = 1 MHz VGS ton 4.7 tf , [[Pb]] RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC) 2 2009-09-29 2SK2847 ID , 1 3 3 5 ID 10 30 (A) 2009-09-29 2SK2847 RDS (ON) ­ Tc VGS = 10


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PDF 2SK2847 2-16F1B k2847 toshiba k2847 2SK2847
k2847

Abstract: TOSHIBA K2847 l47c 2SK2847
Text: TOSHIBA 2SK2847 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2847 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS â , to change without notice. 2000-02-02 1/5 TOSHIBA 2SK2847 ELECTRICAL CHARACTERISTICS (Ta = 25 , Admittance lYfsl VDS=15V, ID —4A 3.0 7.0 — s Input Capacitance Ciss VDS-25V, VGS-0V, f = 1MHz â , ) I-Year (Last Number of the Christian Era) 2000-02-02 2/5 TOSHIBA 2SK2847 id - vds COMMON SOURCE Tc =


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PDF 2SK2847 k2847 TOSHIBA K2847 l47c 2SK2847
L47c

Abstract: 2SK2847
Text: TOSHIBA 2SK2847 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2847 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS , subject to change without notice. 1998-11-12 1/5 TOSHIBA 2SK2847 ELECTRICAL CHARACTERISTICS (Ta = 25 , =15V, ID —4A 3.0 7.0 — s Input Capacitance Ciss VDS-25V, VGS-OV, f = 1MHz — 2040 — pF Reverse , the Christian Era) 1998-11-12 2/5 TOSHIBA 2SK2847 id - VDS COMMON SOURCE Tc = 25°C i5y 'io


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PDF 2SK2847 L47c 2SK2847
2004 - k2847

Abstract: TOSHIBA K2847 2sk2847 transistor k2847 2SK2847(F)
Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2847 DC-DC , transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 2SK2847 , S Input capacitance Ciss - 2040 - VDS = 25 V, VGS = 0 V, f = 1 MHz Reverse , package or lead (Pb)-free finish. 2 2004-07-06 2SK2847 3 2004-07-06 2SK2847 4 2004-07-06 2SK2847 RG = 25 VDD = 90 V, L = 22.9 mH 5 E AS = 1 B VDSS L I2 2


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PDF 2SK2847 k2847 TOSHIBA K2847 2sk2847 transistor k2847 2SK2847(F)
2002 - 2sk2847

Abstract: No abstract text available
Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2847 DC-DC , sensitive device. Please handle with caution. 1 2002-07-31 2SK2847 Electrical Characteristics (Ta , , VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 µA, VDS = 0 V VDS = 720 V, VGS = 0 , 21 Max 8 24 -1.9 - - Unit A A V ns µC Marking 2 2002-07-31 2SK2847 3 2002-07-31 2SK2847 4 2002-07-31 2SK2847 RG = 25 VDD = 90 V, L = 22.9 mH E AS = 1 B VDSS L I2


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PDF 2SK2847 2sk2847
2002 - 2SK2847

Abstract: No abstract text available
Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2847 DC-DC , 2002-07-31 2SK2847 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , - 60 - Rise time Turn-on time VDS = 25 V, VGS = 0 V, f = 1 MHz Switching time pF , - µC Marking 2 2002-07-31 2SK2847 3 2002-07-31 2SK2847 4 2002-07-31 2SK2847 RG = 25 VDD = 90 V, L = 22.9 mH 5 E AS = 1 B VDSS æ ö × L × I2 × ç ÷ 2 è B


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PDF 2SK2847 2SK2847
2006 - TOSHIBA K2847

Abstract: k2847
Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2847 DC-DC , transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-10 2SK2847 , Crss Coss tr ton VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 µA , )-free finish. 2 2006-11-10 2SK2847 3 2006-11-10 2SK2847 4 2006-11-10 2SK2847 RG = 25 VDD = 90 V, L = 22.9 mH E AS = 1 B VDSS L I2 2 B VDSS - VDD 5


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PDF 2SK2847 TOSHIBA K2847 k2847
2007 - TOSHIBA K2847

Abstract: K2847 2SK2847 transistor Toshiba k2847 transistor k2847 toshiba transistor k2847
Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2847 DC-DC , electrostatic-sensitive device. Please handle with caution. 1 2006-11-10 2SK2847 Electrical Characteristics , time VDS = 25 V, VGS = 0 V, f = 1 MHz Switching time pF ns Fall time tf - 20 , )-free finish. 2 2006-11-10 2SK2847 3 2006-11-10 2SK2847 4 2006-11-10 2SK2847 RG = 25 VDD = 90 V, L = 22.9 mH 5 EAS = B VDSS 1 L I2 2 B VDSS - VDD


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PDF 2SK2847 TOSHIBA K2847 K2847 2SK2847 transistor Toshiba k2847 transistor k2847 toshiba transistor k2847
2009 - k2847

Abstract: toshiba k2847 transistor Toshiba k2847 K284 2sk2847 transistor k2847 toshiba transistor k2847
Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2847 DC-DC , electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SK2847 Electrical Characteristics , time VDS = 25 V, VGS = 0 V, f = 1 MHz Switching time pF ns Fall time tf - 20 , hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK2847 3 2009-09-29 2SK2847 4 2009-09-29 2SK2847 RG = 25 VDD = 90 V, L = 22.9 mH 5 EAS = B


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PDF 2SK2847 k2847 toshiba k2847 transistor Toshiba k2847 K284 2sk2847 transistor k2847 toshiba transistor k2847
2SK2847

Abstract: No abstract text available
Text: TOSHIBA 2SK2847 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2847 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : R;[)g(ON) = l-l^ (Typ.) High Forward Transfer Admittance : |Yfs| = 7.0S (Typ.) Low , TOSHIBA Semiconductor Reliability Handbook. 1996-12-01 1/2 TOSHIBA 2SK2847 ELECTRICAL CHARACTERISTICS , , VQS = 0V, f = 1MHz — 2040 — pF Reverse Transfer Capacitance Crss — 45 — Output


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PDF 2SK2847 961001EAA2' 2SK2847
Not Available

Abstract: No abstract text available
Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( −MOSIII) 2SK2847 , . 1 2009-09-29 2SK2847 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage , 0 V, f = 1 MHz Switching time S pF ns Fall time tf — 20 — Turn−off , 2SK2847 3 2009-09-29 2SK2847 4 2009-09-29 2SK2847 RG = 25 VDD = 90 V, L = 22.9 mH , Ž 2009-09-29 2SK2847 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and


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PDF 2SK2847
2013 - TOSHIBA K2847

Abstract: No abstract text available
Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2847 , commercial production 1996-06 1 2013-11-01 2SK2847 Electrical Characteristics (Ta = 25 , VDS = 25 V, VGS = 0 V, f = 1 MHz Switching time pF ns Fall time tf — 20 â , 2013-11-01 2SK2847 3 2013-11-01 2SK2847 4 2013-11-01 2SK2847 RG = 25 Ω VDD = 90 V , Ž 2013-11-01 2SK2847 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and


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PDF 2SK2847 TOSHIBA K2847
2007 - TA1343NG

Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Text: . PLL 2 Y/C M DRAM 6 OSD I/ F RGB QVGA W-VGA 3.3 V 2.5 V 1.5 V , 3.3 V 2.5 V 1.5 V LQFP100 1chip / 3LYCS I/ F SCART VBI OSDI/ F , Station System Flash SDRAM Terrestrial Digital Broadcasting, BS DTV Tuner MPEG2-TS I/ F MPEG2-TS I/ F MeP RF HD Terrestrial Analog Broadcasting ATV Tuner Panel System TC90515XBG MPEG2 encoder Flash SDRAM MPEG2-TS I/ F × 2 TC90515XBG I2C Bus I/ F RF TV CPU


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PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
TB1253N

Abstract: TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F F1814B LB 122s TB1238BN
Text: TA1316 Series PAL/NTSC VCD (YUVI/ F , 25MHz) Wide Band RGB Processor PAL/NTSC VCD (YUV IF , TA1222 Series Next Generation BEP & DPC TA1310 Series NTSC VCD (YUV I/ F , BB Tint, ACB) TB1251 Series World-wide Multi System (1X'tal) Inter/Split IF VCO tank coil less Digital AFT YCbCr I/ F , TA8258H 20W X 2ch HZIP12 TA1287P/ F SW DIP16/MFP16 TA1300AN SDIP24 , TC90A49P VIDEO IN RGB I/ F Sprocess Y/C Y/I/Q TA1276AN RGB C-demo RGB control


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PDF TLP181 AC5000 AC4000 TLP521/TLP621/TLP721Toshiba VDE0884 TLP721 TLP621 TLGU1002 TLOU1002 TB1253N TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F F1814B LB 122s TB1238BN
Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Text: -1.78B Conventional Audio Amplifiers Part Number TA8200AHQ TA8216HQ TA8246AHQ Typ. output ( f = 1 kHz , Standard Panel-Mount Package with Shutter Mini Package with Shutter TOTX147( F ,T) / TOTX177( F ,T) TOTX147L( F ,T) / TOTX177L( F ,T) TOTX147PL( F ,T) / TOTX177PL( F ,T) TORX147( F ,T) / TORX177( F ,T) TORX147L( F ,T) / TORX177L( F ,T) TORX147PL( F ,T) / TORX177PL( F ,T) 13 Microcontrollers Key Features , LEDs Part Number TLN105B( F ) TLN115A( F ) Function For Transmission Photodiodes Min


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PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
2000 - K2543

Abstract: MOSFET TOSHIBA 2SK equivalent 2sk2698 mosfet MOSFET VDS 220V TO-220 2SK2996 equivalent transistor k2543 2sk2997 2SK2679 2SK2837 2sk2917
Text: shows a p VGS falls below the falls and the drain flows through the c obstructed and ID f When VDS , continuous avalanche When Tc = 25°C, f = 10 kHz is specified. Notes: , * When current is applied , 2SK2749 2SK2847 2SK3017 2SK2611 2SK2968 2SK2613 Maximum Ratings VDSS (V) 800 800 800 800 , )748595-42 Toshiba Electronics France SARL Immeuble Robert Schumann 3 Rue de Rome, F , , 100004, China Tel: (010)6590-8795 Fax: (010)6590-8791 Chengdu Office Unit F , 18th Floor, New Times


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2SK1603

Abstract: 2SK2056 2SK1377 2SK1349 2SK1117 2sk2402 2SK1213 transistor 2SK1603 2SK423 2sk1855
Text: N-ch x 3 + P-ch x 3 60 60 - 60 4.4 q s F -12M Serues (4in1, 6in1) Maximum Ratings , TPS 600 2 5.0 P 23 2SK3176 -MOS V TO-3P(N) 200 30 0.052 P 21 2SK2847 , ) 2SK1363 900 8 1.4 TO-3P (N) IS 2SK2847 900 8 1.4 TO-3P (N) IS 2SK1377 400 , 0.15 2.54 4.0 ± 0.1 0.5 ± 0.15 1.7 1.3 ± 0.15 12 1 q F -12M 31.5 ± 0.2 24.4 ±


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PDF 3515C-0202 F-93561, 2SK1603 2SK2056 2SK1377 2SK1349 2SK1117 2sk2402 2SK1213 transistor 2SK1603 2SK423 2sk1855
2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Text: -3P(L) TSSOP-8 TO-3P(SM) SOP-8 TO-3P(W) 2SK2847 (1.4) 2SK3799(1.3) 2SK2613(1.7) 8 , 2.0 Ciss TK55D10J1 Coss 1000 100 Common source VGS = 0 V, f = 1 MHz Ta = 25°C 0.1


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PDF BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: Voltage: 10% of the VDSSX Package A: TO-220SIS J : TO-3P(N) D: TO-220(W) N: PW-Mold(SMD) F : TO , ) 8 2SK2606 (1.2) 2SK2847 (1.4) 2SK3799 (1.3) 2SK3017 (1.25) TPC8A01 (0.018) 2SK2350


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PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
2sK2750 equivalent

Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
Text: POWER-MINI TO-220SIS SP TO-220AB VS-8 TFP VS-6 m PS-8 Slim-TFP 2SK2847 (1.4) 2SK1120 , . Conventional Products 92% @ f = 300 kHz, Vin = 17.6 V, Vout = 1.6 V TPC8020-H+TPC8020-H Solid line , Comparison when ultra high-speed MOS III Used in Combination @ f = 300 kHz, Vin = 17.6 V, Vout = 1.6 V , [Test conditions] f = 300 kHz VIN = 17.6 V VOUT = 1.6 V Ultra High-Speed U-MOS III High-Speed


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PDF O-220SIS BCE0017A 2sK2750 equivalent equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: MOS Voltage: 10% of the VDSSX Package A: TO-220SIS D: TO-220 (W) F : TO-220SM (W) H: TO , ) 2SK4042 (0.97) 2SK2606 (1.2) 2SK2847 (1.4) 2SK3799 (1.3) 2SK3017 (1.25) TPC8A01 (0.018


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PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 IGBT GT30J124 2SC5471
Text: No file text available


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PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 IGBT GT30J124 2SC5471
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