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2SK2733(F) Toshiba America Electronic Components Chip1Stop 670 $10.20 $7.92

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2SK2733(F) Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: T O S H IB A T O SH IB A FIELD EFFECT TRANSISTO R 2SK2733 HIGH SPEED, HIGH CURRENT SW ITCH IN G APPLIC ATIO NS 2SK2733 : Rj)S (ON)= 8.0i) (Typ.) (Max.) (Vd S = 720V) SILICON N C H A N N , t o im p ro v e t h e q u a lity a n d th e reliability o f its products. N e vertheless, se m ic o , electrical sensitivity a n d vu ln e ra b ility t o physical stress. It is th e resp on sibility o f th e buyer, w h e n utilizing T O S H IB A products, t o o b se rve s ta n d a rd s o f safe ty, a n d t o a


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PDF 2SK2733 594mH
Not Available

Abstract: No abstract text available
Text: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR mm 2SK2733 SILICON N CHANNEL MOS TYPE (tt-MOSIII) m , contained herein is subject to change w ithout notice. 1998 01-21 1/5 - TO SHIBA 2SK2733 , = 0.5À VdS = 20V, Id - 0.5A VDS = 25Vf VGS = 0V, f = 1MHz !°V r-i |l-h uv Ih1 1 0.2 - - - 8.0 0.9 370 5 40 20 70 30 95 15 6 9 4.0 9.0 - V a S pF - - - - V f t S Ä, o , rDR Current Pulse Drain Reverse Current id r p Diode Forward Voltage Vd s f Reverse Recovery Time trr


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PDF 2SK2733 100//A
2SK273

Abstract: No abstract text available
Text: T O SH IB A 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSHI , TO SH IBA is continually w orking to improve the quality and the reliability o f its products , sensitivity and vulnerability to physical stress. It is the responsibility o f th e buyer, w hen utilizing T , failure o f a TO SH IBA product could cause loss o f human life, bodily injury or dam age to property. In , contained herein is presented only as a guide for the applications o f our products. No responsibility is


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PDF 2SK2733 00//s^ 2SK273
2003 - K2733

Abstract: 2-10P1B 2SK2733
Text: 2SK2733 NMOS (-MOS) 2SK2733 DC-DC : mm : RDS (ON) = 8.0() : |Yfs|= 0.9S , : () VDD = 90 VTch = 25 ()L = 594 mHRG = 25IAR = 1 A 3: MOS 1 2009-09-29 2SK2733 , VDS = 25 V, VGS = 0 V, f = 1 MHz ns pF VDD400 , (EU 2002/95/EC) 2 2009-09-29 2SK2733 3 2009-09-29 2SK2733 4 2009-09-29 2SK2733 5 2009-09-29 2SK2733 · · · · ""


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PDF 2SK2733 10VID O-220AB SC-46 2-10P1B K2733 2002/95/EC) K2733 2-10P1B 2SK2733
2006 - Not Available

Abstract: No abstract text available
Text: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2733 Chopper , 2006-11-10 2SK2733 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 1 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 , (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 2SK2733 3 2006-11-10 2SK2733 4 2006-11-10 2SK2733 RG = 25 VDD = 90 V, L = 594 mH E AS = 1 B VDSS L I2


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PDF 2SK2733
2004 - K2733

Abstract: 2-10P1B 2SK2733
Text: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2733 Chopper , electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 2SK2733 Electrical Characteristics , voltage Gate threshold voltage VDS = 25 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance , finish. 2 2004-07-06 2SK2733 3 2004-07-06 2SK2733 4 2004-07-06 2SK2733 , 2004-07-06 2SK2733 RESTRICTIONS ON PRODUCT USE 030619EAA · The information contained herein is


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PDF 2SK2733 K2733 2-10P1B 2SK2733
2-10P1B

Abstract: 2SK2733 transistor k 208
Text: TOSHIBA 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2 S K2 7 3 3 , 2SK2733 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. typ. MAX , Input Capacitance Ciss Vds = 25V, Vgs = 0V, f = 1MHz — 370 — pF Reverse Transfer Capacitance , TOSHIBA 2SK2733 id - VDS common source te = 25°c 8 - 10 5.2 5.5 - 5 1.8 , 0.03 0.05 0.1 0.3 0.5 1 DRAIN CURRENT ID (A) 1998-11-12 3/5 TOSHIBA 2SK2733 RDS(ON) - Te IDR - VDS


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PDF 2SK2733 594mH 2-10P1B transistor k 208
2-10P1B

Abstract: 2SK2733
Text: TOSHIBA 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2 S K2 , contained herein is subject to change without notice. 2000-02-02 1/5 TOSHIBA 2SK2733 ELECTRICAL , Capacitance Ciss VDS-25V, VGS-0V, f = 1 MHz — 370 — pF Reverse Transfer Capacitance Crss — 5 â , TOSHIBA 2SK2733 ID - vds COMMON SOURCE Tc = 25°C I o 5.2 5.5 - 5 , 0.03 0.05 0.1 0.3 0.5 1 DRAIN CURRENT ID (A) 2000-02-02 3/5 TOSHIBA 2SK2733 40 32 24 16 RDS(ON


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PDF 2SK2733 2-10P1B 2SK2733
2002 - 2-10P1B

Abstract: 2SK2733
Text: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2733 Chopper , handle with caution. 1 2002-09-02 2SK2733 Electrical Characteristics (Ta = 25 , V, VGS = 0 V, f = 1 MHz pF ns Switching time Fall time tf - 30 - Turn-off , = 0 V dIDR / dt = 100 A / µs - 3 - µC Marking 2 2002-09-02 2SK2733 3 2002-09-02 2SK2733 4 2002-09-02 2SK2733 RG = 25 VDD = 90 V, L = 594 mH 5 E AS = 1


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PDF 2SK2733 2-10P1B 2SK2733
2002 - 2sk2733

Abstract: 2-10P1B
Text: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2733 Chopper , 2SK2733 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source , voltage Rise time Turn-on time VDS = 25 V, VGS = 0 V, f = 1 MHz Switching time pF ns , Marking 2 2002-09-02 2SK2733 3 2002-09-02 2SK2733 4 2002-09-02 2SK2733 RG , 2002-09-02 2SK2733 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF 2SK2733 2sk2733 2-10P1B
2002 - Not Available

Abstract: No abstract text available
Text: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2733 Chopper , 2002-06-27 2SK2733 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 1 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 , Unit A A V ns µC Marking 2 2002-06-27 2SK2733 3 2002-06-27 2SK2733 4 2002-06-27 2SK2733 RG = 25 VDD = 90 V, L = 594 mH E AS = 1 B VDSS L I2 2 B VDSS - VDD


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PDF 2SK2733
2-10P1B

Abstract: 2SK2733
Text: TOSHIBA 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2 S K2 , /5 TOSHIBA 2SK2733 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , 0.2 0.9 — s Input Capacitance Ciss VdS = 25V, Vgs = 0V, f = 1MHz — 370 — pF Reverse Transfer , ) 1998-01-21 2/5 TOSHIBA 2SK2733 id - vds COMMON SOURCE Te = 25°C 8 - i 5.2 , 0.03 0.05 0.1 0.3 0.5 1 DRAIN CURRENT ID (A) 1998-01-21 3/5 TOSHIBA 2SK2733 RDS(ON) - Te IDR -


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PDF 2SK2733 594mH 2-10P1B 2SK2733
2007 - 2-10P1B

Abstract: 2SK2733 K2733
Text: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2733 Chopper , electrostatic-sensitive device. Please handle with caution. 1 2006-11-10 2SK2733 Electrical Characteristics , VDS = 25 V, VGS = 0 V, f = 1 MHz Switching time pF ns Fall time tf - 30 - , 2006-11-10 2SK2733 3 2006-11-10 2SK2733 4 2006-11-10 2SK2733 RG = 25 VDD = 90 V, L = 594 mH 5 EAS = B VDSS 1 L I2 2 B VDSS - VDD 2006-11-10 2SK2733


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PDF 2SK2733 2-10P1B 2SK2733 K2733
2009 - K2733

Abstract: 2-10P1B 2SK2733
Text: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2733 Chopper , electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SK2733 Electrical Characteristics , VDS = 25 V, VGS = 0 V, f = 1 MHz Switching time pF ns Fall time tf - 30 - , substances in electrical and electronic equipment. 2 2009-09-29 2SK2733 3 2009-09-29 2SK2733 4 2009-09-29 2SK2733 RG = 25 VDD = 90 V, L = 594 mH 5 EAS = B VDSS 1


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PDF 2SK2733 K2733 2-10P1B 2SK2733
2007 - TA1343NG

Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Text: . PLL 2 Y/C M DRAM 6 OSD I/ F RGB QVGA W-VGA 3.3 V 2.5 V 1.5 V , 3.3 V 2.5 V 1.5 V LQFP100 1chip / 3LYCS I/ F SCART VBI OSDI/ F , Station System Flash SDRAM Terrestrial Digital Broadcasting, BS DTV Tuner MPEG2-TS I/ F MPEG2-TS I/ F MeP RF HD Terrestrial Analog Broadcasting ATV Tuner Panel System TC90515XBG MPEG2 encoder Flash SDRAM MPEG2-TS I/ F × 2 TC90515XBG I2C Bus I/ F RF TV CPU


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PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
TB1253N

Abstract: TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F F1814B LB 122s TB1238BN
Text: TA1316 Series PAL/NTSC VCD (YUVI/ F , 25MHz) Wide Band RGB Processor PAL/NTSC VCD (YUV IF , TA1222 Series Next Generation BEP & DPC TA1310 Series NTSC VCD (YUV I/ F , BB Tint, ACB) TB1251 Series World-wide Multi System (1X'tal) Inter/Split IF VCO tank coil less Digital AFT YCbCr I/ F , TA8258H 20W X 2ch HZIP12 TA1287P/ F SW DIP16/MFP16 TA1300AN SDIP24 , TC90A49P VIDEO IN RGB I/ F Sprocess Y/C Y/I/Q TA1276AN RGB C-demo RGB control


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PDF TLP181 AC5000 AC4000 TLP521/TLP621/TLP721Toshiba VDE0884 TLP721 TLP621 TLGU1002 TLOU1002 TB1253N TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F F1814B LB 122s TB1238BN
2000 - K2543

Abstract: MOSFET TOSHIBA 2SK equivalent 2sk2698 mosfet MOSFET VDS 220V TO-220 2SK2996 equivalent transistor k2543 2sk2997 2SK2679 2SK2837 2sk2917
Text: shows a p VGS falls below the falls and the drain flows through the c obstructed and ID f When VDS , continuous avalanche When Tc = 25°C, f = 10 kHz is specified. Notes: , * When current is applied , 2SK2607 2SK3301 2SK2733 2SK2845 2SK2718 2SK2608 2SK2700 2SK2719 2SK3088 2SK2610 2SK2717 , )748595-42 Toshiba Electronics France SARL Immeuble Robert Schumann 3 Rue de Rome, F , , 100004, China Tel: (010)6590-8795 Fax: (010)6590-8791 Chengdu Office Unit F , 18th Floor, New Times


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Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Text: -1.78B Conventional Audio Amplifiers Part Number TA8200AHQ TA8216HQ TA8246AHQ Typ. output ( f = 1 kHz , Standard Panel-Mount Package with Shutter Mini Package with Shutter TOTX147( F ,T) / TOTX177( F ,T) TOTX147L( F ,T) / TOTX177L( F ,T) TOTX147PL( F ,T) / TOTX177PL( F ,T) TORX147( F ,T) / TORX177( F ,T) TORX147L( F ,T) / TORX177L( F ,T) TORX147PL( F ,T) / TORX177PL( F ,T) 13 Microcontrollers Key Features , LEDs Part Number TLN105B( F ) TLN115A( F ) Function For Transmission Photodiodes Min


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PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: Voltage: 10% of the VDSSX Package A: TO-220SIS J : TO-3P(N) D: TO-220(W) N: PW-Mold(SMD) F : TO , (4.6) 2SK3374 (4.6) 2SK3472 (4.6) 2SK2733 (9.0) 2SK2845 (9) 2SK3301 (20) 1 1.3 1.7 1.8


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PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
2SK1603

Abstract: 2SK2056 2SK1377 2SK1349 2SK1117 2sk2402 2SK1213 transistor 2SK1603 2SK423 2sk1855
Text: N-ch x 3 + P-ch x 3 60 60 - 60 4.4 q s F -12M Serues (4in1, 6in1) Maximum Ratings , ) 900 2SK2718 -MOS III TO-220(NIS) 900 2SK2719 -MOS III TO-3P(N) 900 2SK2733 , TO-220NIS 2SK537 900 1 9 TO-220AB 2SK2733 900 1 9 TO-220AB 2SK538 , 0.15 2.54 4.0 ± 0.1 0.5 ± 0.15 1.7 1.3 ± 0.15 12 1 q F -12M 31.5 ± 0.2 24.4 ±


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PDF 3515C-0202 F-93561, 2SK1603 2SK2056 2SK1377 2SK1349 2SK1117 2sk2402 2SK1213 transistor 2SK1603 2SK423 2sk1855
2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Text: ) 2SK4023(4.6) 2SK3374(4.6) 2SK3472(4.6) 2SK2733 (9.0) 2SK2845(9) 2SK3301(20) 1 1.3 1.7 1.8 1.9 , 2.0 Ciss TK55D10J1 Coss 1000 100 Common source VGS = 0 V, f = 1 MHz Ta = 25°C 0.1


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PDF BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: MOS Voltage: 10% of the VDSSX Package A: TO-220SIS D: TO-220 (W) F : TO-220SM (W) H: TO , 1.7 1.8 1.9 900 1000 2SK3498 (5.5) 2SK2992 (3.5) 2SK2733 (9.0) 2SK2845 (9) 2SK3301


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PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
2sK2750 equivalent

Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
Text: ) 2SK3472(4.6) 2SK3374(4.6) 2SK2836(9) 2SK3371(9) 2SK2733 (9.0) 2SK2845(9) 2SK3301(20) 1 1.3 , . Conventional Products 92% @ f = 300 kHz, Vin = 17.6 V, Vout = 1.6 V TPC8020-H+TPC8020-H Solid line , Comparison when ultra high-speed MOS III Used in Combination @ f = 300 kHz, Vin = 17.6 V, Vout = 1.6 V , [Test conditions] f = 300 kHz VIN = 17.6 V VOUT = 1.6 V Ultra High-Speed U-MOS III High-Speed


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PDF O-220SIS BCE0017A 2sK2750 equivalent equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 IGBT GT30J124 2SC5471
Text: No file text available


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PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 IGBT GT30J124 2SC5471
*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 TPCA*8023 GT30F123 GT50N322
Text: No file text available


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PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 TPCA*8023 GT30F123 GT50N322
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