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2SK2717(F) datasheet (1)

Part Manufacturer Description Type PDF
2SK2717F Toshiba 2SK2717F - Trans MOSFET N-CH 900V 5A 3-Pin(3+Tab) TO-220NIS Original PDF

2SK2717(F) Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: ) 2SK2717 2SK2717 HIGH SPEED, HIGH CURRENT SW ITCH IN G APPLICATIO NS DC-DC CO NVERTER A N D M O T O R , o r k in g t o im p ro v e t h e q u a lity a n d th e reliability o f its products. N e vertheless , sibility o f th e buyer, w h e n utilizing T O S H IB A products, t o o b se rve s ta n d a rd s o f safe ty, a n d t o a vo id situ a tio n s in w h ic h a m a lfu n c tio n o r failu re o f a T O S H IB A p ro d u c t co u ld cau se loss o f h u m a n life, bod ily injury o r d a m a g e t o prope rty


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PDF 2SK2717 20kfl)
K2717

Abstract: No abstract text available
Text: 2SK2717 rth - tw S A F E O P E R A T IN G A R E A BAS - Tch CH AN NEL TEM PERATU RE 10 30 100 , TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSIII) 2SK2717 n iÊ W Ê F i m.? 7 « i 7 m IN D U S T R IA L A P P L IC A T IO N S U n it in mm 10 ± 0.3 , ility o f its prod ucts. N e ve rth e le ss, se m ic o n d u c to r d e vic e s in g e n e ra l can m a , r a b ility t o physical stress. It is th e re sp o n sib ility o f t h e b u ye r, w h e n


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PDF 2SK2717 0111X1 K2717
2004 - transistor k2717

Abstract: K2717 K2717 POWER TRANSISTOR k2717 equivalent 2SK2717
Text: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2717 DC-DC , electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 2SK2717 Electrical Characteristics , breakdown voltage Gate threshold voltage VDS = 25 V, VGS = 0 V, f = 1 MHz Reverse transfer , or lead (Pb)-free finish. 2 2004-07-06 2SK2717 3 2004-07-06 2SK2717 4 2004-07-06 2SK2717 RG = 25 VDD = 90 V, L = 43.6 mH 5 E AS = 1 B VDSS L I2 2 B


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PDF 2SK2717 transistor k2717 K2717 K2717 POWER TRANSISTOR k2717 equivalent 2SK2717
2002 - 2sk2717

Abstract: DIODE 436
Text: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2717 DC-DC , electrostatic sensitive device. Please handle with caution. 1 2002-09-02 2SK2717 Electrical , time Turn-on time VDS = 25 V, VGS = 0 V, f = 1 MHz pF ns Switching time Fall time tf , 2002-09-02 2SK2717 3 2002-09-02 2SK2717 4 2002-09-02 2SK2717 RG = 25 VDD = 90 V , 2SK2717 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


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PDF 2SK2717 2sk2717 DIODE 436
TOSHIBA 1SS

Abstract: 2SK2717 2SK271
Text: TOSHIBA 2SK2717 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2717 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS â , 2SK2717 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , 4.4 — s Input Capacitance Ciss Vds = 25V, VQS = 0V f = 1MHz — 1200 — pF Reverse Transfer , Era) 2000-02-02 2/5 TOSHIBA 2SK2717 ID - vds COMMON SOURCE Tc = 25°C 1 10 J S 6


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PDF 2SK2717 TOSHIBA 1SS 2SK2717 2SK271
2006 - K2717

Abstract: transistor k2717
Text: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2717 DC-DC , transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-10 2SK2717 , Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VDS = 25 V, VGS = 0 V, f = 1 , line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 2SK2717 3 2006-11-10 2SK2717 4 2006-11-10 2SK2717 RG = 25 VDD = 90 V, L = 43.6 mH E AS = 1 B


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PDF 2SK2717 K2717 transistor k2717
2SK2717

Abstract: No abstract text available
Text: TOSHIBA 2SK2717 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2717 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS â , /5 TOSHIBA 2SK2717 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , .OA 1.1 4.4 — s Input Capacitance Ciss Vds = 25V, VQS = 0V f = 1MHz — 1200 — pF Reverse Transfer , the Christian Era) 1998-11-12 2/5 TOSHIBA 2SK2717 id - VDS COMMON SOURCE Te = 25°C i 10 ^ S


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PDF 2SK2717 2SK2717
2007 - transistor k2717

Abstract: K2717 2SK2717 TRANSISTOR MAKING
Text: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2717 DC-DC , electrostatic-sensitive device. Please handle with caution. 1 2006-11-10 2SK2717 Electrical Characteristics , - Gate threshold voltage Rise time Turn-on time VDS = 25 V, VGS = 0 V, f = 1 MHz , finish. 2 2006-11-10 2SK2717 3 2006-11-10 2SK2717 4 2006-11-10 2SK2717 , 2006-11-10 2SK2717 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained


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PDF 2SK2717 transistor k2717 K2717 2SK2717 TRANSISTOR MAKING
2002 - Not Available

Abstract: No abstract text available
Text: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2717 DC-DC , sensitive device. Please handle with caution. 1 2002-06-05 2SK2717 Electrical Characteristics (Tc , V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS , 2 2002-06-05 2SK2717 3 2002-06-05 2SK2717 4 2002-06-05 2SK2717 RG = 25 , 2SK2717 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


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PDF 2SK2717 900ments,
2011 - K2717

Abstract: transistor k2717
Text: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2717 DC-DC , 2011-05-06 2SK2717 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , , VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 A, VDS = 0 V VDS = 720 V, VGS = 0 , . 2 2011-05-06 2SK2717 30 30 10 10 5 5 3 3 1 1 0.3 0.5 3 2011-05-06 2SK2717 4 2011-05-06 2SK2717 RG = 25 VDD = 90 V, L = 43.6 mH EAS = B VDSS


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PDF 2SK2717 K2717 transistor k2717
2002 - 2SK2717

Abstract: No abstract text available
Text: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2717 DC-DC , 2002-09-02 2SK2717 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , - Gate threshold voltage Rise time Turn-on time VDS = 25 V, VGS = 0 V, f = 1 MHz pF , 100 A / µs - 11 - µC Marking 2 2002-09-02 2SK2717 3 2002-09-02 2SK2717 4 2002-09-02 2SK2717 RG = 25 VDD = 90 V, L = 43.6 mH 5 E AS = 1 B VDSS æ


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PDF 2SK2717 2SK2717
K2717

Abstract: transistor k2717 k2717 equivalent 2SK2717 K2717 POWER TRANSISTOR
Text: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2717 DC-DC , electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SK2717 Electrical Characteristics , - Gate threshold voltage Rise time Turn-on time VDS = 25 V, VGS = 0 V, f = 1 MHz , substances in electrical and electronic equipment. 2 2009-09-29 2SK2717 3 2009-09-29 2SK2717 4 2009-09-29 2SK2717 RG = 25 VDD = 90 V, L = 43.6 mH 5 EAS = B VDSS 1


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PDF 2SK2717 K2717 transistor k2717 k2717 equivalent 2SK2717 K2717 POWER TRANSISTOR
TB1253N

Abstract: TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F F1814B LB 122s TB1238BN
Text: TA1316 Series PAL/NTSC VCD (YUVI/ F , 25MHz) Wide Band RGB Processor PAL/NTSC VCD (YUV IF , TA1222 Series Next Generation BEP & DPC TA1310 Series NTSC VCD (YUV I/ F , BB Tint, ACB) TB1251 Series World-wide Multi System (1X'tal) Inter/Split IF VCO tank coil less Digital AFT YCbCr I/ F , TA8258H 20W X 2ch HZIP12 TA1287P/ F SW DIP16/MFP16 TA1300AN SDIP24 , TC90A49P VIDEO IN RGB I/ F Sprocess Y/C Y/I/Q TA1276AN RGB C-demo RGB control


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PDF TLP181 AC5000 AC4000 TLP521/TLP621/TLP721Toshiba VDE0884 TLP721 TLP621 TLGU1002 TLOU1002 TB1253N TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F F1814B LB 122s TB1238BN
2007 - TA1343NG

Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Text: . PLL 2 Y/C M DRAM 6 OSD I/ F RGB QVGA W-VGA 3.3 V 2.5 V 1.5 V , 3.3 V 2.5 V 1.5 V LQFP100 1chip / 3LYCS I/ F SCART VBI OSDI/ F , Station System Flash SDRAM Terrestrial Digital Broadcasting, BS DTV Tuner MPEG2-TS I/ F MPEG2-TS I/ F MeP RF HD Terrestrial Analog Broadcasting ATV Tuner Panel System TC90515XBG MPEG2 encoder Flash SDRAM MPEG2-TS I/ F × 2 TC90515XBG I2C Bus I/ F RF TV CPU


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PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
2000 - K2543

Abstract: MOSFET TOSHIBA 2SK equivalent 2sk2698 mosfet MOSFET VDS 220V TO-220 2SK2996 equivalent transistor k2543 2sk2997 2SK2679 2SK2837 2sk2917
Text: shows a p VGS falls below the falls and the drain flows through the c obstructed and ID f When VDS , -MOSIII 2SK2717 Guranteed Series 3 Avalanche Withstand Capability Guarantee Method 1 , continuous avalanche When Tc = 25°C, f = 10 kHz is specified. Notes: , * When current is applied , 2SK2607 2SK3301 2SK2733 2SK2845 2SK2718 2SK2608 2SK2700 2SK2719 2SK3088 2SK2610 2SK2717 , )748595-42 Toshiba Electronics France SARL Immeuble Robert Schumann 3 Rue de Rome, F


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2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Text: (1.25) 2SK2604(2.2) 2SK2605(2.2) 2SK2884(2.2) 2SK2717 (2.5) 2SK3565(2.5) 2SK3700(2.5) 2SK4113 , 2.0 Ciss TK55D10J1 Coss 1000 100 Common source VGS = 0 V, f = 1 MHz Ta = 25°C 0.1 , 2SK2718 2SK2700 - 2SK2717 2SK2717 2SK2717 2SK2717 2SK2610 - 2SK2749 2SK2749 - - - , 2SK2717 900 5 2.5 (max) 28(typ.) 170 (typ.) ID(A) 5 RDS(ON)() 2.5 (max) Qg(nC) 45 , 2SK2717 Qg = 48 nC VDS = 50 V/ns VDS = 100 V/div VGS = 2 V/div t = 50 ns/div Thermally


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PDF BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
2sK2750 equivalent

Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
Text: ) PDmTPCP8J01(0.035)(-32V) 2SK2610(2.5) 2SK2717 (2.5) 2SK3565(2.5) 2SK1359(3.8) 5 5.5 6 6.5 , . Conventional Products 92% @ f = 300 kHz, Vin = 17.6 V, Vout = 1.6 V TPC8020-H+TPC8020-H Solid line , Comparison when ultra high-speed MOS III Used in Combination @ f = 300 kHz, Vin = 17.6 V, Vout = 1.6 V , [Test conditions] f = 300 kHz VIN = 17.6 V VOUT = 1.6 V Ultra High-Speed U-MOS III High-Speed , 2.5 28 1150 2SK2717 2SK3742 5 2.5 25 1150 2SK2717 2SK3799 (8


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PDF O-220SIS BCE0017A 2sK2750 equivalent equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
2002 - fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
Text: 2SK2699 2SK2700 2SK2706 2SK2717 2SK2746 2SK2749 2SK2750 2SK2776 2SK2777 2SK2782 2SK2789 2SK2837 , FIN-08100 LOHJA Laurinkatu 48A Tel. +358 19 3282 1 Fax +358 19 3155 66 FRANCE F -75669 Paris Cedex 14 29, bd Romain Rolland Tel. +33 1 58 07 75 75 Fax +33 1 55 48 95 69 F -67000 Strasbourg 20 , Fax +39 02 8250449 CHINA Beijing 100080 East Unit, 1/ F , SIGMA Building, No. 49 Zhichun Road , 1801, 18/ F Shui On Plaza 333 Huai Hai Zhong Road Tel. +86 21 5306 0898 Fax +86 21 5306 0890


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Text: -1.78B Conventional Audio Amplifiers Part Number TA8200AHQ TA8216HQ TA8246AHQ Typ. output ( f = 1 kHz , Standard Panel-Mount Package with Shutter Mini Package with Shutter TOTX147( F ,T) / TOTX177( F ,T) TOTX147L( F ,T) / TOTX177L( F ,T) TOTX147PL( F ,T) / TOTX177PL( F ,T) TORX147( F ,T) / TORX177( F ,T) TORX147L( F ,T) / TORX177L( F ,T) TORX147PL( F ,T) / TORX177PL( F ,T) 13 Microcontrollers Key Features , LEDs Part Number TLN105B( F ) TLN115A( F ) Function For Transmission Photodiodes Min


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PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
2SK1603

Abstract: 2SK2056 2SK1377 2SK1349 2SK1117 2sk2402 2SK1213 transistor 2SK1603 2SK423 2sk1855
Text: N-ch x 3 + P-ch x 3 60 60 - 60 4.4 q s F -12M Serues (4in1, 6in1) Maximum Ratings , TO-3P(N) 600 2SK2700 -MOS III TO-220(NIS) 900 2SK2717 -MOS III TO-220(NIS , -220NIS 2SK1643 900 5 2.8 TO-220AB 2SK2717 900 5 2.5 TO-220NIS 2SK1651 500 8 , 0.15 2.54 4.0 ± 0.1 0.5 ± 0.15 1.7 1.3 ± 0.15 12 1 q F -12M 31.5 ± 0.2 24.4 ±


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PDF 3515C-0202 F-93561, 2SK1603 2SK2056 2SK1377 2SK1349 2SK1117 2sk2402 2SK1213 transistor 2SK1603 2SK423 2sk1855
MOSFET TOSHIBA 2SK2917

Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2843 equivalent 2SK2837 equivalent
Text: 2SK2717 - #:Under Development 2003 Dec DP0540004_01 8/16 -MOS MACH Line Up 1. -MOS MACH , 2SK2719 2SK2610 2SK2717 2SK2749 2SK2847 2SK3017 2SK2611 2SK2968 2SK2613 2003 Dec Maximum


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PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2843 equivalent 2SK2837 equivalent
2002 - 2SK3562

Abstract: 2SK2996 2SK3568 2SK3561 2SK3567 MRAM TO220-NIS 2SK3667 2SK2545 220SIS
Text: 2SK2543 2SK2842 2SK2750 2SK2545 2SK2996 2SK2843 2SK2718 2SK2700 2SK2717 4.5 3.9 3.0 2.7


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PDF 03-3457-3405FAX. 300mmLSI 200343500300mm 100m2 800m2 700m2 TC7MTX03FK 10msMAX) 2SK3562 2SK2996 2SK3568 2SK3561 2SK3567 MRAM TO220-NIS 2SK3667 2SK2545 220SIS
2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: Voltage: 10% of the VDSSX Package A: TO-220SIS J : TO-3P(N) D: TO-220(W) N: PW-Mold(SMD) F : TO


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PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
2sK2750 equivalent

Abstract: 2SK3567 equivalent 4614 mosfet 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent 2SK2545 equivalent toshiba f5d 2SK3566 equivalent 2sk3625
Text: * 2SK3130 2SK2843 2SK2996 2SK3265 2SK2605 2SK2718 2SK2700 2SK2717 (TO-220 isolated) Maximum , 2SK2545 ­ 2SK2996 2SK2843 ­ 2SK3130 ­ 2SK2605 (2,2 ) 2SK2718 2SK2700 ­ 2SK2717 2SK2717 ­ ­


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PDF POWERMOSFET07) TPC6004 TPC6003 TPC6005 TPC6006-H TPC6105 D-40549 2sK2750 equivalent 2SK3567 equivalent 4614 mosfet 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent 2SK2545 equivalent toshiba f5d 2SK3566 equivalent 2sk3625
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
Text: Reference Part Number 2SK2699 2SK2700 2SK2717 2SK2718 2SK2719 2SK2733 2SK2741 2SK2742 2SK2744 , -4- Toshiba Note Replacement 2SK2699 A 2SK2700 A 2SK2717 A 2SK2718 A 2SK2719 A 2SK2733


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PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
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