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LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85
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2SK2700 equivalent Datasheets Context Search

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2SK2700

Abstract: No abstract text available
Text: TOSHIBA 2SK2700 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2700 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR , to change without notice. 2000-02-01 1/5 TOSHIBA 2SK2700 ELECTRICAL CHARACTERISTICS (Ta = 25 , ) 2000-02-01 2/5 TOSHIBA 2SK2700 ID - vds id - vds COMMON SOURCE Te = 25°C y 5.5 10 5.25 , °C 0.3 13 10 30 DRAIN CURRENT ID (A) 2000-02-01 3/5 TOSHIBA 2SK2700 20 16 12 RDS(ON) - Te IDR -


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PDF 2SK2700 2SK2700
2SK2700

Abstract: No abstract text available
Text: TOSHIBA_ TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2700 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS 2SK2700 CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE , 2SK2700 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , ) 1998-11-12 2/5 TOSHIBA 2SK2700 id - VDS id - VDS common source te = 25°c y 5.5 10 c 5.25 , °c 0.3 1 3 10 drain current id (a) 30 1998-11-12 3/5 TOSHIBA 2SK2700 20 16 12 RDS(ON) - Te IDR - VDS


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PDF 2SK2700
transistor 2sk2700

Abstract: 2SK270
Text: T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR 2SK2700 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS 2SK2700 : R dS (Q N ) SILICON N CHANNEL MOS TYPE ( tt-MOSIII) CHOPPER REGULATOR, DC-DC , contained herein is subject to change w itnout notice. 1997 12-11 - 1/5 T O SH IB A 2SK2700 , Id (A) < o r H > § < 1 o 2SK2700 TO SH IB A 2SK2700 R d s (o n ) - Te IDR - , TO SH IB A 2SK2700 r th - tw PULSE WIDTH tw (s) SA FE O P E R A T IN G A R E A 30


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PDF 2SK2700 transistor 2sk2700 2SK270
2006 - K2700

Abstract: transistor k2700
Text: 2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (­MOSIII) 2SK2700 Chopper , 2006-11-10 2SK2700 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , . A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 2SK2700 3 2006-11-10 2SK2700 4 2006-11-10 2SK2700 RG = 25 VDD = 90 V, L = 60 mH E AS = 1 B VDSS L I2 - 2 B V VDSS DD 5 2006-11-10 2SK2700 RESTRICTIONS ON


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PDF 2SK2700 K2700 transistor k2700
2002 - 2SK2700

Abstract: 2SK2700 equivalent transistor 2sk2700
Text: 2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (­MOSIII) 2SK2700 Chopper , 2002-07-31 2SK2700 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , 100 A / µs - 7.2 - µC Marking 2 2002-07-31 2SK2700 3 2002-07-31 2SK2700 4 2002-07-31 2SK2700 RG = 25 VDD = 90 V, L = 60 mH 5 E AS = 1 B VDSS L I2 2 B VDSS - VDD 2002-07-31 2SK2700 RESTRICTIONS ON PRODUCT USE 000707EAA


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PDF 2SK2700 2SK2700 2SK2700 equivalent transistor 2sk2700
transistor 2sk2700

Abstract: No abstract text available
Text: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSIII) 2SK2700 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS 2SK2700 CHOPPER REGULATOR, DC-DC CONVERTER AND , 11-12 - 1/5 TO SHIBA 2SK2700 ELECTRICAL CHARACTERISTICS (Ta = 25°C) TEST CONDITION MIN , 2SK2700 Rd s (o n ) - Te Ed IDR - VDS £ Ä !z °o 03J? g S -8 0 -4 0 0 40 80 120 160 , tó D g g < Ed O CASE TEMPERATURE Tc (°C) 1998 11-12 - 4/5 TO SHIBA 2SK2700 r


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PDF 2SK2700 20kil) transistor 2sk2700
2SK2700

Abstract: 400v high speed diode
Text: TOSHIBA_ TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2700 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS 2SK2700 CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE , /5 TOSHIBA 2SK2700 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , (Last Number of the Christian Era) 1997-12-11 2/5 TOSHIBA 2SK2700 id - vds id - vds common , °c 0.3 1 3 10 drain current id (a) 30 1997-12-11 3/5 TOSHIBA 2SK2700 20 16 12 rds(on) - te idr


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PDF 2SK2700 2SK2700 400v high speed diode
2004 - K2700

Abstract: transistor k2700 K2700 equivalent K2700 OUR 2SK2700 transistor 2sk2700
Text: 2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (­MOSIII) 2SK2700 Chopper , transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 2SK2700 , (Pb)-free finish. 2 2004-07-06 2SK2700 3 2004-07-06 2SK2700 4 2004-07-06 2SK2700 RG = 25 VDD = 90 V, L = 60 mH 5 E AS = 1 B VDSS L I2 2 B VDSS - VDD 2004-07-06 2SK2700 RESTRICTIONS ON PRODUCT USE 030619EAA · The information contained herein is


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PDF 2SK2700 K2700 transistor k2700 K2700 equivalent K2700 OUR 2SK2700 transistor 2sk2700
2002 - 2sk2700

Abstract: "Field Effect Transistor" 2SK2700 equivalent coin 930-HFL PLUG 3P DC/DC motor forward reverse control dr-3 forward converter transistor 2sk2700
Text: 2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (­MOSIII) 2SK2700 Chopper , 2002-07-31 2SK2700 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , 100 A / µs - 7.2 - µC Marking 2 2002-07-31 2SK2700 3 2002-07-31 2SK2700 4 2002-07-31 2SK2700 RG = 25 VDD = 90 V, L = 60 mH 5 E AS = B VDSS 1 æ ö × L × I2 × ç ÷ 2 B VDSS - VDD ø è 2002-07-31 2SK2700 RESTRICTIONS ON PRODUCT USE


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PDF 2SK2700 2sk2700 "Field Effect Transistor" 2SK2700 equivalent coin 930-HFL PLUG 3P DC/DC motor forward reverse control dr-3 forward converter transistor 2sk2700
2007 - K2700

Abstract: transistor k2700 2SK2700 K2700 OUR
Text: 2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (­MOSIII) 2SK2700 Chopper Regulator, DC­DC Converter and Motor Drive Applications Low drain­source ON resistance : RDS (ON) = 3.7 , electrostatic-sensitive device. Please handle with caution. 1 2006-11-10 2SK2700 Electrical Characteristics , finish. 2 2006-11-10 2SK2700 3 2006-11-10 2SK2700 4 2006-11-10 2SK2700 , 2006-11-10 2SK2700 RESTRICTIONS ON PRODUCT USE 20070701-EN · The information contained herein is


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PDF 2SK2700 K2700 transistor k2700 2SK2700 K2700 OUR
2009 - K2700

Abstract: K2700 equivalent 2SK2700 equivalent transistor k2700 2SK2700 Japanese TRANSISTOR K2700
Text: 2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (­MOSIII) 2SK2700 Chopper , electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SK2700 Electrical Characteristics , substances in electrical and electronic equipment. 2 2009-09-29 2SK2700 3 2009-09-29 2SK2700 4 2009-09-29 2SK2700 RG = 25 VDD = 90 V, L = 60 mH 5 EAS = B VDSS 1 L I2 B VDSS - VDD 2 2009-09-29 2SK2700 RESTRICTIONS ON PRODUCT USE · Toshiba


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PDF 2SK2700 K2700 K2700 equivalent 2SK2700 equivalent transistor k2700 2SK2700 Japanese TRANSISTOR K2700
15a h3 SF SC

Abstract: No abstract text available
Text: TOSHIBA 2SK2700 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSHI) 2SK2700 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm , contained herein is subject to change w itho ut notice. 1998 11-12 - 1/5 TOSHIBA 2SK2700 , (Last Num ber of the C hristian Era) 1998 11-12 - 2/5 TOSHIBA 2SK2700 id - vos id , J 7^ ISJ Cn G A TE-SO U R C E V OLTA GE Vq s (V) O O TOSHIBA 2SK2700


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PDF 2SK2700 15a h3 SF SC
MOSFET TOSHIBA 2SK2917

Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2843 equivalent 2SK2837 equivalent
Text: OK Part Number 2SK2543 2SK2842 2SK3067 2SK2750 2SK2545 2SK2996 2SK2843 2SK2718 2SK2700 , 2SK2605 2SK2884 2SK2604 2SK2746 2SK2606 2SK2607 2SK3301 2SK2845 2SK2733 2SK2718 2SK2608 2SK2700


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PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2843 equivalent 2SK2837 equivalent
2SK3562 equivalent

Abstract: 2SK3561 2SK3759 2SK3566 to220sis 2SK3561 equivalent 2SK3568 equivalent 2SK3757 2SK3566 equivalent 2SK3563
Text: OK Part Number 2SK2543 2SK2842 2SK3067 2SK2750 2SK2545 2SK2996 2SK2843 2SK2718 2SK2700


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PDF DP0540007 O-220SIS O-220NIS. O-220NIS O-220SIS 2SK3562 equivalent 2SK3561 2SK3759 2SK3566 to220sis 2SK3561 equivalent 2SK3568 equivalent 2SK3757 2SK3566 equivalent 2SK3563
2003 - Power MOSFET, toshiba

Abstract: 2sk3561 4502 mosfet HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK3742 2SK2842 design new high speed mosfet 2SK3567 equivalent
Text: 1.25 OK 2SK2545 1.0 OK 2SK2996 0.75 OK 2SK2843 6.4 OK 2SK2718 4.3 OK 2SK2700 2.5 OK


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PDF VDSS100V) DP0530019 O-220SIS Power MOSFET, toshiba 2sk3561 4502 mosfet HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK3742 2SK2842 design new high speed mosfet 2SK3567 equivalent
1997 - SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Text: 2SK2611 2SK2662 2SK2679 2SK2700 2SK2717 2SK400 2SK551 2SK552 2SK553 2SK554 2SK555 2SK556 , EQUIVALENT STE26NA90 STE250N06 STE250N06 STE30NA50 STE26NA90 STE30NA50 STE30NA50-DA STE30NA50-DK , STANDARD SGS-THOMSON EQUIVALENT STP3NA50FI STP3NA60 STP3NA60FI STP3NA80 STP3NA80FI STP3NA90 , SGS-THOMSON EQUIVALENT STW16NA40 STW16NA60 STW20NA50 STW20NB50 STW33N20 STW50N10 STW5NA90 STW60N10


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PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Text: ) 2SK2603(3.6) 2SK2883(3.6) 2SK2608(4.3) 2SK2700 (4.3) 2SK2719(4.3) 2SK3564(4.3) 3 3.2 3.4 , 5 6 6 3 5 5 11.5 10 Qg Typ. (nC) 23 23 34 34 25 28 35 60 60 Equivalent , Typ. (ns) Equivalent Existing Part Number 10 10 10 10 10 10 10 10 10 10 10 10 , 200 ns/div Qg40% reduction Equivalent Existing product 2SK2842 ( Equivalent Existing product , (VDSS = 450 V to 600 V) A 17% reduction in the Qg characteristic compared with equivalent existing


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PDF BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
2sK2750 equivalent

Abstract: 2SK3567 equivalent 4614 mosfet 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent 2SK2545 equivalent toshiba f5d 2SK3566 equivalent 2sk3625
Text: * 2SK3130 2SK2843 2SK2996 2SK3265 2SK2605 2SK2718 2SK2700 2SK2717 (TO-220 isolated) Maximum , 2SK2545 ­ 2SK2996 2SK2843 ­ 2SK3130 ­ 2SK2605 (2,2 ) 2SK2718 2SK2700 ­ 2SK2717 2SK2717 ­ ­


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PDF POWERMOSFET07) TPC6004 TPC6003 TPC6005 TPC6006-H TPC6105 D-40549 2sK2750 equivalent 2SK3567 equivalent 4614 mosfet 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent 2SK2545 equivalent toshiba f5d 2SK3566 equivalent 2sk3625
2sK2750 equivalent

Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
Text: (3.6) 2SK2608(4.3) 2SK2700 (4.3) 2SK2719(4.3) 2SK3564(4.3) 2SK3763(4.3) 3 3.2 3.4 CP , area 33% less than that of the TO-220SM offers Rth (ch-c) and Rth (ch-a) almost equivalent to those of , TO-220SM: equivalent to 2SK3389 13.5 10 TFP: 2SK3389 0.1 2.8 4.5 Unit: mm , : 2SK3389 30 V, 75 A, 5 m Max TO-220SM: equivalent to 2SK3389 Channel, Drain Fin and Source Lead , 2SK3564 3 4.3 17 700 2SK2700 2SK3798 5 4 3.5 2SK3565 5


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PDF O-220SIS BCE0017A 2sK2750 equivalent equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
TB1253N

Abstract: TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F F1814B LB 122s TB1238BN
Text: 400600 800 2SK2862 2SK3067 / 2SK2750 3 3.5 3 900 2SK2700 4 5 2SK2381 , 2SK2608 2SK2700 4.3 2SK2719 4.3 2SK3088 4.3 2.2 2SK2750 2.2 2SK3085 3.5 4.5 1.0


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PDF TLP181 AC5000 AC4000 TLP521/TLP621/TLP721Toshiba VDE0884 TLP721 TLP621 TLGU1002 TLOU1002 TB1253N TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F F1814B LB 122s TB1238BN
K2057

Abstract: tpc8107 equivalent toshiba k2057 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK3662 2SK2610 equivalent
Text: 2SK2862(3.2) 2SK3462(1.7)2 2SK2603(3.6)2 2SK2883(3.6)2 2SK2608(4.3)2 2SK2700 (4.3)2 2SK2719(4.3 , . Equivalent Existing Product 48 2SJ412 140 2SJ464 62 110 Newly developed Newly developed , area 33% less than that of the TO-220SM offers Rth (ch-c) and Rth (ch-a) almost equivalent to those of , ) TO-220SM: equivalent to 2SK3389 TFP: 2SK3389 10 13.5 10 9 2.8 Unit: mm 4.5 , dissipation. TO-220SM: equivalent to 2SK3389 160 Channel, Drain Fin and Source Lead Temperatures (°C


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PDF BCE0017A 2SK2610) 2SK794) K2057 tpc8107 equivalent toshiba k2057 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK3662 2SK2610 equivalent
2000 - K2543

Abstract: MOSFET TOSHIBA 2SK equivalent 2sk2698 mosfet MOSFET VDS 220V TO-220 2SK2996 equivalent transistor k2543 2sk2997 2SK2679 2SK2837 2sk2917
Text: (b) shows the equivalent circuit. The power MOSFET contains a parasitic bipolar transistor , field +15V Rg = 25 -15V Figure 1 (a) Cross-section of power MOSFET Figure 1 (b) Equivalent , 2SK2607 2SK3301 2SK2733 2SK2845 2SK2718 2SK2608 2SK2700 2SK2719 2SK3088 2SK2610 2SK2717


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2SK1603

Abstract: 2SK2056 2SK1377 2SK1349 2SK1117 2sk2402 2SK1213 transistor 2SK1603 2SK423 2sk1855
Text: TO-3P(N) 600 2SK2700 -MOS III TO-220(NIS) 900 2SK2717 -MOS III TO-220(NIS , -220NIS 2SK2700 900 3 4.3 TO-220NIS 2SK1357 900 5 2.8 TO-3P (N) 2SK2610 900 5


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PDF 3515C-0202 F-93561, 2SK1603 2SK2056 2SK1377 2SK1349 2SK1117 2sk2402 2SK1213 transistor 2SK1603 2SK423 2sk1855
2002 - fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
Text: 2SK2699 2SK2700 2SK2706 2SK2717 2SK2746 2SK2749 2SK2750 2SK2776 2SK2777 2SK2782 2SK2789 2SK2837


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: ) A 17% reduction in the Qg characteristic compared with equivalent existing products through an optimized chip design A switching characteristic (toff) 15% faster than that of equivalent existing , (VDSS = 800 V to 900 V) A 37% reduction in the Qg characteristic compared with equivalent existing , equivalent existing products Guaranteed avalanche capability for all products 10 nC/div 2SK4107 -MOSVI , 800 1150 1150 1150 1400 1650 1650 2200 1450 2200 2200 2790 Existing Equivalent Part


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PDF BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
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