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2SK2688-01 datasheet (7)

Part Manufacturer Description Type PDF
2SK2688-01 Fuji Electric N-channel MOS-FET Original PDF
2SK2688-01L Fuji Electric Power MOSFET Scan PDF
2SK2688-01L Fuji Electric N-channel enhancement mode power MOSFET Scan PDF
2SK2688-01L Fuji Electric N-channel MOS-FET Scan PDF
2SK2688-01S Fuji Electric Power MOSFET Scan PDF
2SK2688-01S Fuji Electric N-channel enhancement mode power MOSFET Scan PDF
2SK2688-01S Fuji Electric N-channel MOS-FET Scan PDF

2SK2688-01 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - ups 017

Abstract: 2SK2688-01
Text: 2SK2688-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 0,017 ±50A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching , Unit °C/W °C/W 2SK2688-01 N-channel MOS-FET 30V 0,017 ±50A FAP-IIS Series 60W , ] This specification is subject to change without notice! t [s] 2SK2688-01 N-channel


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PDF 2SK2688-01 ups 017 2SK2688-01
1998 - k 2750 MOSFET

Abstract: L027
Text: 2SK2688-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 30V 0,017 ±50A 60W > Outline Drawing > Applications Switching Regulators UPS DC-DC , www.fujisemiconductor.com N-channel MOS-FET 30V 0,017 ±50A 2SK2688-01 FAP-IIS Series Drain-Source-On-State , ! N-channel MOS-FET 30V 0,017 ±50A 2SK2688-01 FAP-IIS Series Typical Switching Characteristics 60W


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PDF 2SK2688-01 277mH k 2750 MOSFET L027
ISO 8015

Abstract: KF 520 2SK2688-01 US50A
Text: FUJI 2SK2688-01 US N-channel MOS-FET l^UÖldTÜ^UE FAP-IIIB Series 30V 0,01Q 50A 60W > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters Outline , N-channel MOS-FET 2SK2688-01 L,S FUJI 30V 0,01Q 50A 60W FAP-IIIB Series eiUMEUUtìUK > Characteristics , 50A 60W 2SK2688-01 L,S F AP-III B Series HLtMëîTOgDE > Characteristics Power Dissipation Tc PC


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PDF 2SK2688-01 277mH, 00D4bT0 ISO 8015 KF 520 US50A
Not Available

Abstract: No abstract text available
Text: FUJI 2SK2688-01L ,S N-channel MOS-FET IS U jM O J llä U G FAP-IIIB Series 30V > Features - 0,0IQ 50 A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power , Unit “ C/W °C/W 2SK2688-01 L,S N-channel MOS-FET 30V 50A 0 ,0 1 0 60 W FU JI , 0004(3^0 303 ■! t[s] - > 12 ta 2SK2688-01 L,S N-channel MOS-FET 30 V 0 ,0 I Q


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PDF 2SK2688-01L 2SK2688-01
2SK2688-01

Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME . : 2SK2688-01 L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKER NAME APPROVED Fuji Electric Co.,Ltd. 1/ y iWj-R-r>fUs> 1 .Scope This specifies Fuji PowerMOSFET2SK2688-01L,S 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.0utview T-Pack Outview See to 5/14,6/14 page ¿.Absolute Maximum Ratings at Tc=25°C (unless otherwise specified


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PDF 2SK2688-01 PowerMOSFET2SK2688-01L
2SK2688-01

Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME . : 2SK2688-01 L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification Is subject to change without notice. DATE DRAWN. I CHECKER NAME APPROVED Fuji Electric Co.,Ltd. 1/ y lYJST-P—Oftds» 1 .Scope This specifies Fuji Power MOSFET2SK2688-01L.S 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4,Outview T-Pack Outview See to 5/14,6/14 page ¿.Absolute Maximum Ratings at Tc=25°C (unless otherwise


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PDF 2SK2688-01 MOSFET2SK2688-01L 0357-R-003a 0257-R-003a
Not Available

Abstract: No abstract text available
Text: FU JI a iL H E ir iK â J E > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated 2SK2688-01 L,S FAP-IIIB Series > Outline Drawing N-channel MOS-FET 30V 0 ,0 1 & 50A 60W > Applications Motor Control General Purpose Power Amplifier DC-DC converters > Maximum Ratings and Characteristics Item Drain-Source-Voltage Continous Drain Current Pulsed Drain , Series 2SK2688-01L.S Drain-Source On-State Resistance vs. Ta, FUJI [M L G K S T G S O E Typical


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PDF 2SK2688-01
Not Available

Abstract: No abstract text available
Text: SPECIFICATION D E V IC E N A M E : P ow er M O S F E T T Y P E NAM E . : 2SK2688-01L 2SK2688-01S S PE C . NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAW N, CHECKED/ NAME APPROVED Fuji Electric Co.,Ltd. V, V nw-p-nfu» 1.Scope 2.Construction 3.Applications 4.0utview This specifies Fuji Power MOSFET 2SK2688-01 L,S N-Channel enhancement mode power MOSFET for Switching T-Pack Outview See to 5/14,6/14 page 5.Absolute Maximum Ratings


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PDF 2SK2688-01L 2SK2688-01S 2SK2688-01 57-R-OnMa 0257-R-003a
2005 - IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
Text: 2SK2654-01 2SK2687-01 2SK2688-01L 2SK2688-01S 2SK2695-01 2SK2696-01MR 2SK2757-01 2SK2758-01L


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PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AP85L02h ap70l02h 2SK3683 2SK2696
F5022

Abstract: f5017h F5021H f5016h 2sk2696 2sk3528 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: 2SK2806-01 2SK2807-01L, S 2SK2808-01MR 2SK2687-01 2SK2688-01L , S 2SK2689-01MR 2SK3363-01 2SK2890-01MR


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PDF 2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk2696 2sk3528 F5038H 2SK3102-01R 2SK2696-01MR F5018
2002 - Not Available

Abstract: No abstract text available
Text: MOSFET / Power MOSFETs MOSFET Power MOSFET FAPIIIB FAPIIIB series 2 Lowon resistance Device type F8006N F7007N 2SK2806-01 2SK2807-01L, S 2SK2808-01MR 2SK2687-01 2SK2688-01L , S 2SK2689-01MR 2SK3363-01 2SK2890-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 2SK2894-01R 2SK2895-01 2SK2896-01L, S 2SK2897-01MR 2SK2900-01 2SK2901-01L, S 2SK2902-01MR 2SK3362-01 2SK2809-01MR 2SK3364-01 2SK2903-01MR 2SK2905-01R 2SK2691-01R 2SK2690-01 2SK2904-01 2SK2898-01 2SK2899-01R 2SK2906-01 2SK2907-01R 2SK3216-01 2SK3217-01MR


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PDF F8006N F7007N 2SK2806-01 2SK2807-01L, 2SK2808-01MR 2SK2687-01 2SK2688-01L, 2SK2689-01MR 2SK3363-01 2SK2890-01MR
220TQ

Abstract: No abstract text available
Text: MOSFETs FAP-IIIB Series - Logic Level Operation, Ultra Low R d s (ON), High Avalanche Ruggedness 30 - 60 Volts Device Type 2SK2806-01 2SK2807-01L.S 2SK2808-01 MR 2SK2890-01 MR 2SK2687-01 2SK2688-01L.S 2SK2689-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 2SK2894-01R 2SK2896-01L.S 2SK2897-01MR 2SK2895-01 2SK2809-01MR 2SK2691-01R 2SK2690-01 2SK2898-01 2SK2899-01R V d s s (V) Maximum Ratinas Id (A) P d (W) 35 35 35 50 50 50 50 90 100 100 100 Characteristics (Max.l R d s (o n ) n R d s (o n ) n Ciss(pf) Coss


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PDF 2SK2806-01 2SK2807-01L 2SK2808-01 2SK2890-01 2SK2687-01 2SK2688-01L 2SK2689-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 220TQ
6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1mbh60d-090a 6DI15S050 1MBH-60D
Text: 2SK2655-Q1R 2SK2687-01 2SK2688-01L , S 2SK2689-01 MR 2SK2690-01 2SK2691 -01 R 2SK2695-01 2SK2696-01 MR


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PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1mbh60d-090a 6DI15S050 1MBH-60D
2007 - mp2a5100

Abstract: ya868c12 YA868C15 YG865C10 2sk4004 diode 3a05 Diode SMD SJ 24 F5049 Diode SMD SJ 28 Diode SMD SJ 09
Text: 2SK2687-01 2SK2688-01L , S 2SK2689-01MR 2SK3363-01 2SK2890-01MR 2SK2892-01R 2SK2891-01 2SK2893-01


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PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 YG865C10 2sk4004 diode 3a05 Diode SMD SJ 24 F5049 Diode SMD SJ 28 Diode SMD SJ 09
2SK2765

Abstract: 2SK100 2SK1940 2SK2029-01LS 2sk1936 2SK1944 2SK182 2sk1553 2SK1082 2SK196
Text: .S 2SK2807-01L.S 2SK2688-01L.S 2SK2516-01L,S -7 -25 10 35 35 50 50 0.20 0.06 FAPIII 2SJ475-01 2SK1388


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PDF T0-220 T0-220F15 2SJ472-01L 2SJ314-01L 2SJ473-01L 2SK2248-01L 2SK1942-01 2SK2770-01 2SK2528-01 2SK1944-01 2SK2765 2SK100 2SK1940 2SK2029-01LS 2sk1936 2SK1944 2SK182 2sk1553 2SK1082 2SK196
2001 - F8006N

Abstract: 2SK3363-01 2SK2892-01R 2SK2890-01MR 2SK2808-01MR 2SK2807-01L 2SK2806-01 2SK2690 2SK2689-01MR 2SK2688-01L
Text: MOSFET / Power MOSFETs MOSFET Power MOSFET FAP-IIIB FAP-IIIB series Low-on resistance Device type F8006N F7007N 2SK2806-01 2SK2807-01L, S 2SK2808-01MR 2SK2687-01 2SK2688-01L , S 2SK2689-01MR 2SK3363-01 2SK2890-01MR 2SK2892-01R 2SK2891-01 2SK2893-01 2SK2894-01R 2SK2895-01 2SK2896-01L, S 2SK2897-01MR 2SK2900-01 2SK2901-01L, S 2SK2902-01MR 2SK3362-01 2SK2809-01MR 2SK3364-01 2SK2903-01MR 2SK2905-01R 2SK2691-01R 2SK2690-01 2SK2904-01 2SK2898-01 2SK2899-01R 2SK2906-01


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PDF F8006N F7007N 2SK2806-01 2SK2807-01L, 2SK2808-01MR 2SK2687-01 2SK2688-01L, 2SK2689-01MR 2SK3363-01 2SK2890-01MR F8006N 2SK3363-01 2SK2892-01R 2SK2890-01MR 2SK2808-01MR 2SK2807-01L 2SK2806-01 2SK2690 2SK2689-01MR 2SK2688-01L
Not Available

Abstract: No abstract text available
Text: 2SK2808-01 MR 2SK2687-01 2SK2688-01L , S 2SK2689-01 MR 2SK2890-01MR 2SK2892-01R 2SK2891-01 2SK2893-01


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PDF O-220F15 2SK1822-01 2SK2259-01MR 2SK2165-01 2SK2166-01R 2SK1969-01 2SK1823-01R F8006N F7007N
Not Available

Abstract: No abstract text available
Text: .S 2SJ476-01L.S •7 -25 2SK2249-01L.S 10 2SK2048L.S 35 2SK2807-01L.S 35 2SK2688-01L.S 2SK2516-01L


OCR Scan
PDF 2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R
ci 740

Abstract: K1279 TO-220F15 2SK2807-01L 2SK2806-01 2SK2687-01 2SK2259-01MR 2SK2166-01R 2SK2165-01 2SK1822-01MR
Text: -220F15 2SK2687-01 30 50 60 0.017 0.010 4130 1950 103 520 TO-220 2SK2688-01L ,S 30 50 60 0.017 0.010 4130 1950 103


OCR Scan
PDF 2SK1822-01MR O-220F15 2SK2165-01 2SK2166-01R 2SK2259-01MR 2SK1823-01R K1969-01 2SK1818MR ci 740 K1279 TO-220F15 2SK2807-01L 2SK2806-01 2SK2687-01
2005 - 2SK2688-01L

Abstract: mosfet power amplifier mosfet low vgs FUJI MOSFET
Text: 2SK2688-01L ,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof T-Pack(L) T-Pack(S) Applications Switching regulators DC-DC , °C/W 1 FUJI POWER MOSFET 2SK2688-01L ,S Characteristics 2 FUJI POWER MOSFET 2SK2688-01L ,S 3 FUJI POWER MOSFET 2SK2688-01L ,S 4 Fuji Electric


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PDF 2SK2688-01L mosfet power amplifier mosfet low vgs FUJI MOSFET
2SK2652

Abstract: 2SK2771-01R
Text: FAPIIIB 2SK2688-01L.S 50 FAPIII 2SK2516-01L.S 50 Fill 2SK1388 2SK2806-01 2SK2687-01 35 35 50


OCR Scan
PDF F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R
Not Available

Abstract: No abstract text available
Text: 2SK2688-01L ,S 2SK2689-01MR 2SK2809-Q1MR 2SK2691-01R 2$Ki6dÓ-Òl 30 30 30 30 30 30 60 60 60


OCR Scan
PDF 2SK1822-01 2SK2165-01 2SK2166-01R 2SK225Ã -01MR 2SK1823-01R 2SK1969-01
1997 - 12V 60w Motor

Abstract: No abstract text available
Text: 2SK2688-01L ,S FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 30V 0,01 50A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and , 0,01 2SK2688-01L ,S FAP-IIIB Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch , ! N-channel MOS-FET 30V 0,01 2SK2688-01L ,S FAP-IIIB Series Power Dissipation PD=f(TC) 50A 60W


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PDF 2SK2688-01L 277mH, 12V 60w Motor
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