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2SK2611(F) Toshiba America Electronic Components Chip1Stop 970 $19.00 $15.30

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2SK2611 datasheet (10)

Part Manufacturer Description Type PDF
2SK2611 Toshiba N-Channel MOSFET Original PDF
2SK2611 Toshiba Original PDF
2SK2611 Toshiba Power MOSFETs Cross Reference Guide Original PDF
2SK2611 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
2SK2611 Others Scan PDF
2SK2611 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
2SK2611 Toshiba Silicon N channel field effect transistor for high speed, high voltage switching applications, DC-DC converter, relay drive and motor drive applications Scan PDF
2SK2611(F,T) Toshiba 2SK2611 - Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN Original PDF
2SK2611FT Toshiba 2SK2611FT - Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN Original PDF
2SK2611T Toshiba 2SK2611T - Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN Original PDF

2SK2611 Datasheets Context Search

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2SK2611

Abstract: diode co35
Text: SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA 2SK2611 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( tt- MOS I I I ) ( 2SK2611 ) HIGH SPEED, HIGH VO LTA G E SW ITCHIN G APPLIC A TIO , TOSHIBA Semiconductor Reliability Handbook. 2SK2611 - 1 _ 1996-09-02_ T O S H IB A CO RPO RATIO N SEMICONDUCTOR TOSHIBA 2SK2611 TECHNICAL DATA ( 2SK2611 , 0V I D R = 9A, V G S = 0V d lD R / dt = 100A / ¡us - 1.6 20 - - 2SK2611 -2 1996-09-02 T


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PDF 2SK2611 2SK2611) 100/zA 2SK2611 diode co35
2Sk2611

Abstract: transistor 2sk2611 TE5500 2sk2611 transistor
Text: SEM ICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TO SH IBA 2SK2611 SILICON N CHANNEL MOS TYPE ( tt- M O S I I I ) TECHNICAL DATA ( 2SK2611 ) HIGH SPEED, HIGH VOLTAGE SWITCHING , Reliability Handbook. 2SK2611 - 1 _ 1996-09-02_ T O S H IB A C O RPO RA TIO N SEM ICONDUCTOR TO SH IBA 2SK2611 TECHNICAL DATA ( 2SK2611 ) ELECTRICAL CHARACTERISTICS , 9A, VGS = 0V IDR = 9A, VGS = 0V dlDR / dt = 100A / ¡us 1.6 20 - - 2SK2611 - 2


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PDF 2SK2611 2SK2611) 20kil) 2SK2611 transistor 2sk2611 TE5500 2sk2611 transistor
k2611

Abstract: toshiba transistor k2611 toshiba k2611 transistor k2611 2SK2611 toshiba 2sk2611 K2611 toshiba SC-65
Text: TOSHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE , 2SK2611 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , Number of the Christian Era) 1998-01-21 2/5 TOSHIBA 2SK2611 ID - vds COMMON SOURCE Tc = 25 , 0.3 0.5 1 3 5 10 30 DRAIN CURRENT ID (A) 1998-01-21 3/5 TOSHIBA 2SK2611 RDS(ON) - Te Ed Ü £ I


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PDF 2SK2611 k2611 toshiba transistor k2611 toshiba k2611 transistor k2611 2SK2611 toshiba 2sk2611 K2611 toshiba SC-65
K2611

Abstract: toshiba transistor k2611 toshiba k2611 transistor k2611 toshiba 2sk2611 20kO 2SK2611 K2611 toshiba SC-65
Text: TOSHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY , 2SK2611 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , the Christian Era) 2000-02-02 2/5 TOSHIBA 2SK2611 ID - vds COMMON SOURCE Tc = 25°C i5y 'io , 0.3 0.5 1 3 5 10 30 DRAIN CURRENT ID (A) 2000-02-02 3/5 TOSHIBA 2SK2611 RDS(ON) - Te Ed Ü Â


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PDF 2SK2611 K2611 toshiba transistor k2611 toshiba k2611 transistor k2611 toshiba 2sk2611 20kO 2SK2611 K2611 toshiba SC-65
2sk2611

Abstract: No abstract text available
Text: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSIII) 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS 2SK2611 DC-DC CONVERTER, RELAY DRIVE AND MOTOR , notice. 9 # 1998 01-21 1/5 - TO SHIBA 2SK2611 ELECTRICAL CHARACTERISTICS (Ta = 25 , ) 1998 01-21 2/5 - TO SHIBA 2SK2611 id - vds id - vds 4 8 12 16 , CURRENT I d (A) 1998 01-21 3/5 - TO SHIBA 2SK2611 R d s (ON) - Te IDR - VDS -4 0 0


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PDF 2SK2611 --720V) 2sk2611
2009 - k2611

Abstract: toshiba transistor k2611 transistor k2611 toshiba k2611 K2611 equivalent equivalent transistor k2611 2SK2611 INFORMATION ON K2611 K2611 toshiba K2611 circuits
Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC , handle with caution. 1 2009-09-29 2SK2611 Electrical Characteristics (Ta = 25 , substances in electrical and electronic equipment. 2 2009-09-29 2SK2611 3 2009-09-29 2SK2611 4 2009-09-29 2SK2611 RG = 25 VDD = 90 V, L = 15 mH 5 EAS = B VDSS 1 L I2 B VDSS - VDD 2 2009-09-29 2SK2611 RESTRICTIONS ON PRODUCT USE · Toshiba


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PDF 2SK2611 k2611 toshiba transistor k2611 transistor k2611 toshiba k2611 K2611 equivalent equivalent transistor k2611 2SK2611 INFORMATION ON K2611 K2611 toshiba K2611 circuits
toshiba transistor k2611

Abstract: K2611 toshiba K2611 transistor k2611 K2611 toshiba transistor Toshiba K2611 k2611 Transistor INFORMATION ON K2611 k2611 a K261-1
Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC , . Please handle with caution. 1 2006-11-10 2SK2611 Electrical Characteristics (Ta = 25 , )-free finish. 2 2006-11-10 2SK2611 3 2006-11-10 2SK2611 4 2006-11-10 2SK2611 RG = 25 VDD = 90 V, L = 15 mH 5 EAS = B VDSS 1 L I2 B VDSS - VDD 2 2006-11-10 2SK2611 RESTRICTIONS ON PRODUCT USE 20070701-EN · The information contained herein is


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PDF 2SK2611 toshiba transistor k2611 K2611 toshiba K2611 transistor k2611 K2611 toshiba transistor Toshiba K2611 k2611 Transistor INFORMATION ON K2611 k2611 a K261-1
2006 - K2611

Abstract: transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 k2611 Transistor 2SK2611
Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC , . Please handle with caution. 1 2006-11-10 2SK2611 Electrical Characteristics (Ta = 25 , )-free finish. 2 2006-11-10 2SK2611 3 2006-11-10 2SK2611 4 2006-11-10 2SK2611 RG = 25 VDD = 90 V, L = 15 mH 5 EAS = 1 B VDSS L I2 2 B VDSS - VDD 2006-11-10 2SK2611 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF 2SK2611 K2611 transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 k2611 Transistor 2SK2611
2sk2611 transistor

Abstract: No abstract text available
Text: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE ( tt-M O SIII) 2SK2611 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE A N D M O TOR DRIVE , notice. 9 9 1998 11-12 - 1/5 TO SH IBA 2SK2611 ELECTRICAL CHARACTERISTICS (Ta = 25 , TO SHIBA 2SK2611 id - Vds id - Vds < < Q ÊH Q 6 h ¡Z¡ Pi D O 3 ¿i , 3/5 TO SHIBA 2SK2611 Rd s (o n ) - Te Cd IDR - VDS 0 2 1 Oz 9 w O SQ Vi a


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PDF 2SK2611 20kil) 2sk2611 transistor
2002 - 2SK2611

Abstract: transistor 2sk2611 2sk2611 transistor SC-65
Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications l Low drain-source ON resistance : RDS (ON) = 1.1 , device. Please handle with caution. 1 2002-06-27 2SK2611 Electrical Characteristics (Ta = 25 , 2002-06-27 2SK2611 3 2002-06-27 2SK2611 4 2002-06-27 2SK2611 RG = 25 VDD = 90 V , 2SK2611 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


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PDF 2SK2611 15transportation 2SK2611 transistor 2sk2611 2sk2611 transistor SC-65
2002 - 2SK2611

Abstract: transistor 2sk2611 toshiba 2sk2611 SC-65
Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 1.1 , device. Please handle with caution. 1 2002-06-27 2SK2611 Electrical Characteristics (Ta = 25 , 2002-06-27 2SK2611 3 2002-06-27 2SK2611 4 2002-06-27 2SK2611 RG = 25 VDD = 90 V, L = 15 mH 5 E AS = 1 B VDSS L I2 2 B VDSS - VDD 2002-06-27 2SK2611


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PDF 2SK2611 2SK2611 transistor 2sk2611 toshiba 2sk2611 SC-65
2SK2611

Abstract: LDR 24v LT 7207
Text:  2SK2611 IMUtll) o Sil. mwEx-t o i-n'7-f^ffl • t>mtt*»"». : RDS(ON)=» »n(WH) • «ÄlinfEilr K 5 9 > * : |Yfs|=7.0S(«*) • ; IDSS = 100//A(»*) <7DS = 7207) • «i»>. > h ? 4 y-ct. : 7lh = 2.0~4.07(7DS=107. ID = lmA) (Ta « 25*C) »fi ü K »te KV* > • V — X IBJ * EE vpss 900 7 K i"f >-y- h nwi X jfc DC , {: Iiimmu: ra.t < ti ? w». 2SK2611 ( 2SK2611 ) (Ta a 25°C) JR i i¿ ? m Ä * # ft* 11* Y - h M ti


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PDF 2SK2611 100//A( 00A//v8 2SK2611 LDR 24v LT 7207
2010 - K2611

Abstract: toshiba transistor k2611 toshiba K2611 transistor k2611 K2611 toshiba k261 K2611 circuits 2sk2611 transistor transistor Toshiba K2611
Text: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC , . Please handle with caution. 1 2010-01-29 2SK2611 Electrical Characteristics (Ta = 25 , electrical and electronic equipment. 2 2010-01-29 2SK2611 3 2010-01-29 2SK2611 4 2010-01-29 2SK2611 RG = 25 VDD = 90 V, L = 15 mH EAS = B VDSS 1 L I2 - B V 2 DD VDSS 5 2010-01-29 2SK2611 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its


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PDF 2SK2611 K2611 toshiba transistor k2611 toshiba K2611 transistor k2611 K2611 toshiba k261 K2611 circuits 2sk2611 transistor transistor Toshiba K2611
Not Available

Abstract: No abstract text available
Text: TOSHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSIII) 2SK2611 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S , TOSHIBA 2SK2611 ELECTRICAL CHARACTERISTICS Ta = 25°C) SY M BO L C H A R A C T E R IS T IC G , 1998 11-12 - 2/5 TOSHIBA 2SK2611 id vds - id < - vds < Q D à , 2SK2611 IDR - VDS R d s (ON) - Te K O o ¿ 2 Q < w 2 C d 0 3 2~ O2


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PDF 2SK2611
2SK2611

Abstract: SC-65 toshiba 2sk2611
Text: TOSHIBA 2SK2611 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2611 HIGH , subject to change without notice. 1998-11-12 1/5 TOSHIBA 2SK2611 ELECTRICAL CHARACTERISTICS (Ta = 25 , (Last Number of the Christian Era) 1998-11-12 2/5 TOSHIBA 2SK2611 id - VDS COMMON SOURCE Tc = 25 , 0.3 0.5 1 3 5 10 30 DRAIN CURRENT ID (A) 1998-11-12 3/5 TOSHIBA 2SK2611 RDS(ON) - Te Ed Ü ¡5 I _ a , 120 160 200 CASE TEMPERATURE Tc (°C) 0 20 40 60 TOTAL GATE CHARGE 1998-11-12 4/5 TOSHIBA 2SK2611 rth


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PDF 2SK2611 SC-65 toshiba 2sk2611
D408 mosfet

Abstract: mosfet D412 M51995AFP mosfet d408 D407 mosfet MIP0224SY D412 mosfet pj 899 diode ZD204 uc3854dw
Text: °C/W Pmax = 150.0 W 2SK2611 Pd = 11 W ATc = 24.4 °C Tc = 74.4 °c TOSHIBA Tj = Tc + (0 j-c X Pd) = 83.6 °C D.F. = 55.7 % Q104 Tjmax= 150 °C 0j-c = 0.833 °C/W Pmax = 150.0 w 2SK2611 Pd = 11 W ATc = , °C 0j-c = 0.833 °C/W Pmax = 150.0 W 2SK2611 Pd = 11 W ATc = 27.4 °C Tc = 77.4 °C TOSHIBA Tj = , 2SK2611 Pd = 11 W ATc = 30.4 °c Tc = 80.4 °C TOSHIBA Tj = Tc + (0 j-c xPd) = 89.6 °c D.F. = 59.7 % , D.F. = 41.6 % Q103 Tjmax= 150 ®C 0j-c = 0.833 °C/W Pmax = 150.0 W 2SK2611 Pd = 11 W ATc = 24.1 °C


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PDF ZUP-800 IA550-79-01 R-2-12 R-13-16 R-17-18 R-19-36 ZUP-800 RCR-9102) MIL-HDBK-217F. ZUP6-132 D408 mosfet mosfet D412 M51995AFP mosfet d408 D407 mosfet MIP0224SY D412 mosfet pj 899 diode ZD204 uc3854dw
2SK2611

Abstract: 2SK3669 2SK3633 QFP144 TMP92CA25FG sot89 fet H1 SOT-89 fet
Text: A RDS ON Max 800 7 1.7 900 9 1.6 900 5 2.5 2SK2746 2SK2611 2SK2610 3


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PDF 20MBdIC. 03-3457-3405FAX. 20MHz TMP92CA25FG RTE25/15 20Mbps 19mA/15mA TLP116 10kV/us 2SK2611 2SK3669 2SK3633 QFP144 TMP92CA25FG sot89 fet H1 SOT-89 fet
2SK2056

Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
Text: 2SK2789 2SK1358 2SK2611 2SK1928 2SK2789 2SK1362 2SK2610 2SK1929 2SK2884 2SK1363


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PDF 2SK2235 2SK2057 2SK3462 2SK2837 2SK2741 2SK2231 2SK2742 2SK2077 2SK2746 2SK1487 2SK2056 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
2sk3625

Abstract: 2SK3566 equivalent 2SK3868 2sj618 NTPCA8008-H 2SK3878 2SK2611 2sk 2sj complementary mosfet MOSFET TOSHIBA 2SK2917 TPC8107
Text: (0.55) 2SK3310 (0.65) 2SK3407 (0.65) 2SK3869 (0.68) 10 2SK2611 (1.4) 2SK3473 (1.6) 2SK3878 , ) 1.6 10 4.5 38 2SK2611 ID (A) trr (nC) Typ. ID (A) 2SK3126 -MOS MACH , 70 2SK2611 900 9 150 TO-3P (N) 1.2 1.4 10 4.0 58 2SK2968 900


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PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2sk3625 2SK3566 equivalent 2SK3868 2sj618 NTPCA8008-H 2SK3878 2SK2611 2sk 2sj complementary mosfet MOSFET TOSHIBA 2SK2917 TPC8107
CEM-1 20Z

Abstract: LT KBJ406G Fuse 250V 4al 6C3 diode ltkbj406g C259C 100MOhms 2SK2611 capacitor 470uf 250v elna 105
Text: INSPECTION OUTPUT DIODE REFERENCE ONLY) : TF493 ETD-34 : 2SK2611 TO-3P :CTB-34M TO-3P OUTPUT


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PDF 80mVp-p 230VAC CTc31 KBJ406G 4AL/250V TF-349 CEM-1 20Z LT KBJ406G Fuse 250V 4al 6C3 diode ltkbj406g C259C 100MOhms 2SK2611 capacitor 470uf 250v elna 105
2SK2056

Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Text: 2SK2611 M/P 2SK1377 Himeji Toscom Himeji M/P 2SK1362 Factory 2SK2601 B , 2SK2607 800 2SK2608 900 2SK2610 900 2SK2611 900 2SK2613 1000 2SK2614 50 2SK2615 60 2SK2661 500


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PDF 2SJ147 O-220IS 2SJ183 2SJ200 2SJ201 2SJ224 O-220FL/SM 2SJ238 2SJ239 2SJ240 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
Text: 2SK2607 2SK2608 2SK2610 2SK2611 2SK2613 2SK2614 2SK2615 2SK2637 2SK2661 2SK2662 2SK2679 2SK2698 , 2SK2610 A 2SK2611 A 2SK2613 A 2SK2614 A 2SK2615 A TPC8008 A 2SK2661 A 2SK2662 A 2SK2679 A


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PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2SK2837 equivalent STE180N10 RFH75N05E IRFD620
sot23 BS170

Abstract: 2SK2671 rfp40n IXFN27N80 IRFL014N irf6348 P3NB60 IRF7305 STP22NE10L BSN304
Text: -SAN 9 200 0,25 25 IS0220 2SK2611 9 900 1,4 150 T03P 2SK2761 9 600 1 50 T0220F15 BUZ72A 9 100 0,25 40


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PDF BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 sot23 BS170 2SK2671 rfp40n IXFN27N80 IRFL014N irf6348 P3NB60 IRF7305 STP22NE10L
fuse BJE 147

Abstract: SHINDENGEN TR 222 fuse 9 BJE 147 ZD205 7431u zd106 TRANSFORMER 509 ac dc m51995afp d1fl20u ZUP-400
Text: 85.7 °C D.F. = 57.1 % Q103 Tjmax= 150 V Bj-c = 0.833 °C/W Pmax - 150.0 w 2SK2611 Pd = 11 W ATc , 0.833 °C/W Pmax = 150.0 W 2SK2611 Pd = 11 W ATc = 21.5 °C Te = 71.5 °c TOSHIBA Tj = Te + (Oj-c XPd) = 80.6 °C D.F. = 53.8 % Q104 Tjmax= 150 °c 0j-c = 0.833 °c/w Pmax = 150.0 w 2SK2611 Pd =


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PDF ZUP-400 JA549-79-01 R-2-12 R-13-14 R-15-16 R-17-32 ZUP-400 RCR-9102) MIL-HDBK-217F. GENRAD-2503. fuse BJE 147 SHINDENGEN TR 222 fuse 9 BJE 147 ZD205 7431u zd106 TRANSFORMER 509 ac dc m51995afp d1fl20u
MOSFET TOSHIBA 2SK2917

Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2843 equivalent 2SK2837 equivalent
Text: 2SK2719 2SK2610 2SK2717 2SK2749 2SK2847 2SK3017 2SK2611 2SK2968 2SK2613 2003 Dec Maximum


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PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2843 equivalent 2SK2837 equivalent
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