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2SK2607(F) MOSFET, N, TO-3P
2SK2607(F) ECAD Model
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2SK2607(F) datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
2SK2607(F) 2SK2607(F) ECAD Model Toshiba 2SK2607 - Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-3PN Original PDF
2SK2607(F,T) 2SK2607(F,T) ECAD Model Toshiba 2SK2607 - MOSFET N-CH 800V 9A 2-16C1B Original PDF

2SK2607(F) Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE ( tt-M O SIII) 2SK2607 2SK2607 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR , o r k in g t o im p ro v e t h e q u a lity a n d th e reliability o f its products. N e vertheless , sibility o f th e buyer, w h e n utilizing T O S H IB A products, t o o b se rve s ta n d a rd s o f safe ty, a n d t o a vo id situ a tio n s in w h ic h a m a lfu n c tio n o r failu re o f a T O S H IB A


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PDF 2SK2607
Not Available

Abstract: No abstract text available
Text: TO SHIBA 2SK2607 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSHI , U rt V rt4-| - -«TTrt » 4- f ~ L VDGR VGSS !d !d P Pd I1 — > C O eas T , orking to improve the quality and the reliability o f its products. Nevertheless, semiconductor devices , to physical stress. It is the responsibility o f th e buyer, w hen utilizing T O SH IBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure o f a TO SH IBA


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PDF 2SK2607 20kfl)
K2607 TOSHIBA

Abstract: 2SK2607 K2607 toshiba K2607 SC-65 VNQ marking MOS *k2607
Text: TOSHIBA 2SK2607 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2607 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR , to change without notice. 1998-01-21 1/5 TOSHIBA 2SK2607 ELECTRICAL CHARACTERISTICS (Ta = 25 , Admittance lYfsl Vds = !5V, Id —4A 3.0 7.0 — s Input Capacitance Ciss Vds = 25V, VGS = 0V, f = 1MHz , A) -Year (Last Number of the Christian Era) 1998-01-21 2/5 TOSHIBA 2SK2607 id - vds id - vds


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PDF 2SK2607 K2607 TOSHIBA 2SK2607 K2607 toshiba K2607 SC-65 VNQ marking MOS *k2607
2SK2607

Abstract: SC-65 diode ED 9A
Text: TOSHIBA 2SK2607 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2607 HIGH , 2SK2607 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , Capacitance Ciss VDS = 25V, VQS = 0V, f = 1MHz — 2160 — pF Reverse Transfer Capacitance Crss — 45 , (Starting from Alphabet A) -Year (Last Number of the Christian Era) 1998-11-12 2/5 TOSHIBA 2SK2607 id - VDS , / f / 10C w 1 JJ 0 2 4 6 8 GATE-SOURCE VOLTAGE VGS (V) |Yfe| - ID 10 30


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PDF 2SK2607 SC-65 diode ED 9A
odv marking

Abstract: No abstract text available
Text: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON IM CHANNEL MOS TYPE ( tt-MOSIII) 2SK2607 , -65 2.B R A T IN G U N IT o O + 1 IT , Ó. 1/5 TO SHIBA 2SK2607 ELECTRICAL , utput Capacitance Rise Tim e Crss Cosa tr lYfsl Ciss \T-r^n -OdV -n \ T TU ö - " " ' > * Vjö -v v » f , D = 4A t S l )h v out i| r - Sw itch in g Tim e Turn-on Tim e ton tf V in F a ll Tim , Qg Qgs Qgd Vrxrx ^ o = 10V - - ? V ' VJTSJ-'' *j_ f ± j = 40nV ID = 9A - - - - -


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PDF 2SK2607 2SK26Q7 odv marking
K2607

Abstract: K2607 TOSHIBA 2SK2607 SC-65
Text: TOSHIBA 2SK2607 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2607 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR , 2SK2607 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , 3.0 7.0 — s Input Capacitance Ciss VDS = 25 V, Vqs = 0 V, f = 1 MHz — 2160 — pF Reverse , Alphabet A) -Year (Last Number of the Christian Era) 2000-02-01 2/5 TOSHIBA 2SK2607 ID - vds id - vds


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PDF 2SK2607 K2607 K2607 TOSHIBA 2SK2607 SC-65
2003 - K2607 TOSHIBA

Abstract: K2607 toshiba K2607 2SK2607 SC-65
Text: 2SK2607 NMOS (-MOSIII) 2SK2607 DC-DC · · : |Yfs| = 7.0 S () · · , , IAR = 9 A 3: MOS 1 2009-09-29 2SK2607 (Ta = 25 , = 100 VDS = 25 V, VGS = 0 V, f = 1 MHz VGS ton 4.7 tf , . 4 RoHS RoHS (RoHS) 2003 1 27 (EU 2002/95/EC) 2 2009-09-29 2SK2607 ID , ) 0.3 0.5 1 3 3 ID 5 10 30 (A) 2009-09-29 2SK2607 RDS (ON) ­ Tc


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PDF 2SK2607 SC-65 2-16C1B K2607 TOSHIBA K2607 toshiba K2607 2SK2607 SC-65
2SK2607

Abstract: SC-65
Text: Nf- V*>UMOSff¿(;r-MOSIIl) 2SK2607 (WU*07) o «a. O DC-OCH h'7- f HÄlfilteii r K * 9 HDS(ON) = lon(««) iDSS^OOMlft*) (VDS=640V) JROtSv'Ä'MUf.c. f \ y X / > H 9 4 '/TT» : V^h = , « jft IaS 9 A Ear 15 mJ f - * * * » « Tch 150 *C R ff « « T«, -55-150 •c 1 Vf MAX Ol it , 'C. L=17.4mH. Rg = 250. IaR = 9A c ««ÄiiMOSKlil^-i-ior*») «me rit« < t¿ ? v». 2SK2607 OS4Q607 , * Ciss VDs = 25V. VGS = 0V, f = 1MHz — 2160 — pF « A 8 fi Crsa — 45 — m a » * Coss


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PDF 2SK2607 SC-65 2-16C1B 2SK2607 SC-65
2002 - 2sK2607 TOSHIBA

Abstract: 2SK2607 SC-65
Text: 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2607 Chopper , device. Please handle with caution. 1 2002-06-27 2SK2607 Electrical Characteristics (Ta = 25 , V, VGS = 0 V, f = 1 MHz Switching time pF ns Fall time tf - 25 - Turn-off , , VGS = 0 V IDR = 9 A, VGS = 0 V, dIDR / dt = 100 A / µs Marking 2 2002-06-27 2SK2607 3 2002-06-27 2SK2607 4 2002-06-27 2SK2607 RG = 25 VDD = 90 V, L = 17.4 mH 5 E AS =


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PDF 2SK2607 2sK2607 TOSHIBA 2SK2607 SC-65
2004 - K2607

Abstract: toshiba K2607 K2607 TOSHIBA K2607 transistor transistor k2607 toshiba transistor k2607 2SK2607 TOSHIBA 2SK2607 SC-65
Text: 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2607 Chopper , caution. 1 2004-07-06 2SK2607 Electrical Characteristics (Ta = 25°C) Characteristics Gate , 0 V, f = 1 MHz Reverse transfer capacitance Crss - 45 - Output capacitance , 2SK2607 3 2004-07-06 2SK2607 4 2004-07-06 2SK2607 RG = 25 VDD = 90 V, L = 17.4 mH 5 E AS = 1 B VDSS L I2 2 B VDSS - VDD 2004-07-06 2SK2607


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PDF 2SK2607 K2607 toshiba K2607 K2607 TOSHIBA K2607 transistor transistor k2607 toshiba transistor k2607 2SK2607 TOSHIBA 2SK2607 SC-65
toshiba K2607

Abstract: transistor k2607
Text: 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( −MOSIII) 2SK2607 , electrostatic-sensitive device. Please handle with caution. 1 2011-04-06 2SK2607 Electrical Characteristics (Ta , voltage Rise time Turn−on time VDS = 25 V, VGS = 0 V, f = 1 MHz S pF ns Switching , electrical and electronic equipment. 2 2011-04-06 2SK2607 3 2011-04-06 2SK2607 VDD = 400V 4 2011-04-06 2SK2607 RG = 25 VDD = 90 V, L = 17.4 mH 5 EAS = B VDSS 1 â


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PDF 2SK2607 toshiba K2607 transistor k2607
2002 - 2SK2607

Abstract: SC-65
Text: 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2607 Chopper , . Please handle with caution. 1 2002-06-27 2SK2607 Electrical Characteristics (Ta = 25 , V, VGS = 0 V, f = 1 MHz Switching time pF ns Fall time tf - 25 - Turn-off , , VGS = 0 V IDR = 9 A, VGS = 0 V, dIDR / dt = 100 A / µs Marking 2 2002-06-27 2SK2607 3 2002-06-27 2SK2607 4 2002-06-27 2SK2607 RG = 25 VDD = 90 V, L = 17.4 mH 5 E AS =


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PDF 2SK2607 2SK2607 SC-65
2006 - toshiba K2607

Abstract: toshiba transistor k2607 K2607 K2607 transistor K2607 TOSHIBA
Text: 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2607 Chopper , with caution. 1 2006-11-10 2SK2607 Electrical Characteristics (Ta = 25°C) Characteristics , | Ciss Crss Coss tr VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 µA , finish. 2 2006-11-10 2SK2607 3 2006-11-10 2SK2607 4 2006-11-10 2SK2607 , 2006-11-10 2SK2607 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to


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PDF 2SK2607 toshiba K2607 toshiba transistor k2607 K2607 K2607 transistor K2607 TOSHIBA
2007 - toshiba K2607

Abstract: K2607 TOSHIBA K2607 transistor 2SK2607 TOSHIBA K2607 transistor k2607 toshiba transistor k2607 2SK2607 SC-65
Text: 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2607 Chopper , 2006-11-10 2SK2607 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , - Gate threshold voltage Rise time Turn-on time VDS = 25 V, VGS = 0 V, f = 1 MHz , 2SK2607 3 2006-11-10 2SK2607 4 2006-11-10 2SK2607 RG = 25 VDD = 90 V, L = 17.4 mH 5 EAS = B VDSS 1 L I2 B VDSS - VDD 2 2006-11-10 2SK2607


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PDF 2SK2607 toshiba K2607 K2607 TOSHIBA K2607 transistor 2SK2607 TOSHIBA K2607 transistor k2607 toshiba transistor k2607 2SK2607 SC-65
2013 - toshiba transistor k2607

Abstract: No abstract text available
Text: 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2607 , commercial production 1995-12 1 2013-11-01 2SK2607 Electrical Characteristics (Ta = 25 , Turn−on time VDS = 25 V, VGS = 0 V, f = 1 MHz Switching time pF ns Fall time tf â , electronic equipment. 2 2013-11-01 2SK2607 3 2013-11-01 2SK2607 VDD = 400V 4 2013-11-01 2SK2607 RG = 25 Ω VDD = 90 V, L = 17.4 mH 5 EAS = B VDSS 1 ⎛ ⎞ ⋅ L â


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PDF 2SK2607 toshiba transistor k2607
2009 - K2607

Abstract: toshiba K2607 K2607 TOSHIBA K2607 transistor 2SK2607 SC-65
Text: 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2607 Chopper , 2009-09-29 2SK2607 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current , - Gate threshold voltage Rise time Turn-on time VDS = 25 V, VGS = 0 V, f = 1 MHz , electronic equipment. 2 2009-09-29 2SK2607 3 2009-09-29 2SK2607 4 2009-09-29 2SK2607 RG = 25 VDD = 90 V, L = 17.4 mH 5 EAS = B VDSS 1 L I2 B VDSS - VDD 2


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PDF 2SK2607 K2607 toshiba K2607 K2607 TOSHIBA K2607 transistor 2SK2607 SC-65
2011 - toshiba K2607

Abstract: K2607 K2607 transistor 2sK2607 TOSHIBA transistor k2607 K2607 TOSHIBA
Text: 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2607 Chopper , with caution. 1 2011-04-06 2SK2607 Electrical Characteristics (Ta = 25°C) Characteristics , | Ciss Crss Coss tr VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 A , electronic equipment. 2 2011-04-06 2SK2607 3 2011-04-06 2SK2607 VDD = 400V 4 2011-04-06 2SK2607 RG = 25 VDD = 90 V, L = 17.4 mH EAS = B VDSS 1 L I2 - B V 2 DD VDSS


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PDF 2SK2607 toshiba K2607 K2607 K2607 transistor 2sK2607 TOSHIBA transistor k2607 K2607 TOSHIBA
2007 - TA1343NG

Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Text: . PLL 2 Y/C M DRAM 6 OSD I/ F RGB QVGA W-VGA 3.3 V 2.5 V 1.5 V , 3.3 V 2.5 V 1.5 V LQFP100 1chip / 3LYCS I/ F SCART VBI OSDI/ F , Station System Flash SDRAM Terrestrial Digital Broadcasting, BS DTV Tuner MPEG2-TS I/ F MPEG2-TS I/ F MeP RF HD Terrestrial Analog Broadcasting ATV Tuner Panel System TC90515XBG MPEG2 encoder Flash SDRAM MPEG2-TS I/ F × 2 TC90515XBG I2C Bus I/ F RF TV CPU


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PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
TB1253N

Abstract: TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F F1814B LB 122s TB1238BN
Text: TA1316 Series PAL/NTSC VCD (YUVI/ F , 25MHz) Wide Band RGB Processor PAL/NTSC VCD (YUV IF , TA1222 Series Next Generation BEP & DPC TA1310 Series NTSC VCD (YUV I/ F , BB Tint, ACB) TB1251 Series World-wide Multi System (1X'tal) Inter/Split IF VCO tank coil less Digital AFT YCbCr I/ F , TA8258H 20W X 2ch HZIP12 TA1287P/ F SW DIP16/MFP16 TA1300AN SDIP24 , TC90A49P VIDEO IN RGB I/ F Sprocess Y/C Y/I/Q TA1276AN RGB C-demo RGB control


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PDF TLP181 AC5000 AC4000 TLP521/TLP621/TLP721Toshiba VDE0884 TLP721 TLP621 TLGU1002 TLOU1002 TB1253N TB1240 TA8792N TA8792 tb1238 f062dsl TC90A65F F1814B LB 122s TB1238BN
2002 - fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
Text: STS7NF30L 18 TO SH IB A 2SK2607 2SK2608 2SK2610 2SK2611 2SK2614 2SK2661 2SK2662 2SK2698 , FIN-08100 LOHJA Laurinkatu 48A Tel. +358 19 3282 1 Fax +358 19 3155 66 FRANCE F -75669 Paris Cedex 14 29, bd Romain Rolland Tel. +33 1 58 07 75 75 Fax +33 1 55 48 95 69 F -67000 Strasbourg 20 , Fax +39 02 8250449 CHINA Beijing 100080 East Unit, 1/ F , SIGMA Building, No. 49 Zhichun Road , 1801, 18/ F Shui On Plaza 333 Huai Hai Zhong Road Tel. +86 21 5306 0898 Fax +86 21 5306 0890


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
2SK1603

Abstract: 2SK2056 2SK1377 2SK1349 2SK1117 2sk2402 2SK1213 transistor 2SK1603 2SK423 2sk1855
Text: N-ch x 3 + P-ch x 3 60 60 - 60 4.4 q s F -12M Serues (4in1, 6in1) Maximum Ratings , -3P(N) 180 10 0.83 2SK2607 -MOS III TO-3P(N) 800 9 1.2 P 26 2SK1530 , -3P (N) 2SK2607 800 9 1.2 TO-3P (N) ID (A) RDS(ON) Max () VDSS (V) ID (A , TO-220NIS 2SK2320 800 8.5 1.2 TO-3P (N) IS 2SK2607 800 9 1.2 TO-3P (N , 0.15 2.54 4.0 ± 0.1 0.5 ± 0.15 1.7 1.3 ± 0.15 12 1 q F -12M 31.5 ± 0.2 24.4 ±


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PDF 3515C-0202 F-93561, 2SK1603 2SK2056 2SK1377 2SK1349 2SK1117 2sk2402 2SK1213 transistor 2SK1603 2SK423 2sk1855
Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Text: -1.78B Conventional Audio Amplifiers Part Number TA8200AHQ TA8216HQ TA8246AHQ Typ. output ( f = 1 kHz , Standard Panel-Mount Package with Shutter Mini Package with Shutter TOTX147( F ,T) / TOTX177( F ,T) TOTX147L( F ,T) / TOTX177L( F ,T) TOTX147PL( F ,T) / TOTX177PL( F ,T) TORX147( F ,T) / TORX177( F ,T) TORX147L( F ,T) / TORX177L( F ,T) TORX147PL( F ,T) / TORX177PL( F ,T) 13 Microcontrollers Key Features , LEDs Part Number TLN105B( F ) TLN115A( F ) Function For Transmission Photodiodes Min


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PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
2000 - K2543

Abstract: MOSFET TOSHIBA 2SK equivalent 2sk2698 mosfet MOSFET VDS 220V TO-220 2SK2996 equivalent transistor k2543 2sk2997 2SK2679 2SK2837 2sk2917
Text: shows a p VGS falls below the falls and the drain flows through the c obstructed and ID f When VDS , continuous avalanche When Tc = 25°C, f = 10 kHz is specified. Notes: , * When current is applied , 2SK2607 2SK3301 2SK2733 2SK2845 2SK2718 2SK2608 2SK2700 2SK2719 2SK3088 2SK2610 2SK2717 , )748595-42 Toshiba Electronics France SARL Immeuble Robert Schumann 3 Rue de Rome, F , , 100004, China Tel: (010)6590-8795 Fax: (010)6590-8791 Chengdu Office Unit F , 18th Floor, New Times


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PDF
2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: Voltage: 10% of the VDSSX Package A: TO-220SIS J : TO-3P(N) D: TO-220(W) N: PW-Mold(SMD) F : TO , -220SM(W) DP TO-3P(N) 2SK2607 (1.2) 2SK3309 (0.65) 2SK3310 (0.65) 2SK3407 (0.65) 2SK3869 (0.68


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PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
2SK2056

Abstract: 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
Text: 2SK2601 2SK2078 2SK2607 2SK1513 2SK2601 2SK2088 2SK2401 2SK1531 2SK2698 2SK2089 , 2SK2952 2SK2320 2SK2607 2SK1643 2SK2717 2SK2351 2SK2544 1382 [ 9 ] Superseded and


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PDF 2SK2235 2SK2057 2SK3462 2SK2837 2SK2741 2SK2231 2SK2742 2SK2077 2SK2746 2SK1487 2SK2056 2SK1603 2SK1377 2SK537 2SK1723 2SK1213 transistor 2SK1603 2sk1603 datasheet 2SJ239 2SK2352
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